CN105734516A - Target back plate for magnetron sputtering and magnetron sputtering device - Google Patents
Target back plate for magnetron sputtering and magnetron sputtering device Download PDFInfo
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- CN105734516A CN105734516A CN201610290495.5A CN201610290495A CN105734516A CN 105734516 A CN105734516 A CN 105734516A CN 201610290495 A CN201610290495 A CN 201610290495A CN 105734516 A CN105734516 A CN 105734516A
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- backboard
- target
- magnetron sputtering
- conduction sheet
- magnetic conduction
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
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- Mechanical Engineering (AREA)
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- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a target back plate for magnetron sputtering and a magnetron sputtering device, relates to the technical field of magnetron sputtering, and aims to increase the utilization rate of a target material and improve the uniformity of the thickness of a film formed on a substrate to be coated. According to the target back plate for magnetron sputtering, a cooling fluid channel is formed inside the target back plate, a plurality of magnets are arranged on the back side of the target back plate, magnetic conductive pieces are arranged inside the cooling liquid channel in the target back plate; and the magnetic conductive pieces correspond to magnetic fields with the strongest magnetic intensity generated by the magnetic conductive pieces and the plurality of magnets. The target back plate for magnetron sputtering and the magnetron sputtering device, which are disclosed by the invention, are applied to planar film coating.
Description
Technical field
The present invention relates to magnetron sputtering technique field, particularly relate to target backboard and the magnetic control sputtering device of a kind of magnetron sputtering.
Background technology
In existing magnetic control sputtering device, as it is shown in figure 1, target 1 used is generally supported by target backboard 2, particularly larger-size planar targets；Target backboard 2 is internally provided with cooling passage, utilizes the coolant flowing through described cooling passage that target 1 is cooled down, in order to avoid affecting being normally carried out of magnetron sputtering because target 1 temperature is too high.Magnetic field used during magnetron sputtering is provided by the magnet 3 being arranged on target backboard 2 back side, the magnetic field distribution in this magnetic field is relevant with the arrangement mode of the magnet 3 being arranged on target backboard 2 back side, such as, when the arrangement mode of magnet 3 selects magnet arrangement mode as shown in Figure 4, the density of line of magnetic force in the produced magnetic field of magnet 3 is gradually reduced from the two ends, left and right of target 1 to the middle part of target 1, namely magnetic field intensity is gradually reduced from the two ends of target 1 to the middle part of target 1, by the etch rate at target 1 two ends is very fast when causing magnetron sputtering, middle part is slower, and be well known to those skilled in the art be, when target 1 is by being accomplished by the target 1 that more renews time breakdown.Therefore, when target 1 be arranged on can be formed the target backboard 2 in above-mentioned magnetic field carries out magnetron sputtering time, at target 1 two ends, the middle part by target time breakdown 1 still has bigger surplus, causes that the utilization rate of target 1 reduces.
The problem low for solving above-mentioned target utilization, although by the mode that target 1 two ends thicken being improved the utilization rate of target 1 in prior art, but owing to the etch rate at target 1 two ends is very fast, form the film forming thickness at two ends on substrate to be coated accordingly also just thicker, so will cause the film forming membrane thickness unevenness of substrate to be coated.
Summary of the invention
It is an object of the invention to provide the target backboard of a kind of magnetron sputtering and magnetic control sputtering device, for improve target utilization rate while, improve the uniformity of the film forming thickness formed on substrate to be coated.
To achieve these goals, the present invention provides following technical scheme:
A first aspect of the present invention provides the target backboard of a kind of magnetron sputtering, it is provided with cooling passage in target backboard, the back side of target backboard is provided with multiple magnet, is provided with magnetic conduction sheet in the cooling passage of target backboard, and produced by magnetic conduction sheet and multiple magnets, the magnetic field intensity Qiang district in magnetic field is corresponding.
The target backboard of the magnetron sputtering with constituted above can reach following beneficial effect:
On the basis of target backboard original structure, owing to the cooling passage of target backboard was hollow structure originally, increase in the cooling passage of target backboard and magnetic conduction sheet is set, and magnetic conduction sheet is arranged at the magnetic field intensity Qiang district in magnetic field produced by multiple magnet, be equivalent to increase the thickness of the magnetic conduction entity in magnetic field intensity Qiang district target backboard, and magnetic conduction sheet can absorb magnetic field energy and reduce magnetic field intensity, therefore, the magnetic field intensity through this magnetic field intensity Qiang district can be reduced by adding magnetic conduction sheet, the magnetic field intensity after target backboard zones of different is made to reach unanimity, thus making when magnetron sputtering the etch rate of target is reached unanimity, then the service life of whole target can be extended, improve the utilization rate of target；Simultaneously as the etch rate of target is reached unanimity during magnetron sputtering, form the film forming thickness on substrate to be coated accordingly also just uniformly, improve the uniformity of the film forming thickness formed on substrate to be coated.
Based on the technical scheme of the target backboard of above-mentioned magnetron sputtering, a second aspect of the present invention provides a kind of magnetic control sputtering device, including vacuum coating chamber, and is located at the above-mentioned target backboard in vacuum coating chamber.
The beneficial effect that magnetic control sputtering device provided by the invention can reach with above-mentioned target backboard is identical, therefore is not described in detail in this.
Accompanying drawing explanation
Accompanying drawing described herein is used for providing a further understanding of the present invention, constitutes the part of the present invention, and the schematic description and description of the present invention is used for explaining the present invention, is not intended that inappropriate limitation of the present invention.In the accompanying drawings:
The structural representation of the target backboard that Fig. 1 provides for prior art；
The structural representation of the target backboard that Fig. 2 provides for the embodiment of the present invention；
The schematic diagram of the cooling passage that Fig. 3 provides for the embodiment of the present invention；
The schematic diagram of the magnet arrangement mode that Fig. 4 provides for the embodiment of the present invention；
The schematic top plan view of the target backboard that Fig. 5 provides for the embodiment of the present invention；
The structural representation of the magnetic conduction sheet that Fig. 6 provides for the embodiment of the present invention.
Accompanying drawing labelling:
1-target, 2-target backboard,
3-magnet, 4-magnetic conductor,
5-is protruding, 6-groove.
Detailed description of the invention
For ease of understanding, below in conjunction with Figure of description, the target backboard and the magnetic control sputtering devices that provide the embodiment of the present invention are described in detail.
Refer to Fig. 2, in embodiment provided by the invention, being provided with cooling passage in target backboard 2, the back side of target backboard 2 is provided with multiple magnet 3, and in the cooling passage of target backboard 2, it being additionally provided with magnetic conduction sheet 4, produced by magnetic conduction sheet 4 and multiple magnets 3, the magnetic field intensity Qiang district in magnetic field is corresponding.
When being embodied as, the cooling passage arranged in target backboard 2 is as it is shown on figure 3, cooling passage preferably employs serpentine channel, and the adjacency channel place of serpentine channel exists very thin division board, and the entrance and exit of coolant is respectively arranged on the outer surface of target backboard 2；When carrying out magnetron sputtering, coolant flows into from entrance, through serpentine channel, target 1 is cooled down, then flow out from outlet, coolant can change circulation in time, it is possible to well ensures cooling effect, in order to avoid affecting being normally carried out of magnetron sputtering because target 1 temperature is too high.The back side of target backboard 2 arranges multiple magnet 3, and magnetic field used during magnetron sputtering is provided by magnet 3, and magnet 3 produces magnetic field, thus utilizing magnetic field that the constraint of charged particle is completed the sputtering of target 1；The arrangement mode of multiple magnets 3 can limit to some extent because of factors such as the structures of the structure of target backboard 2 and magnetron sputtering apparatus, so that multiple magnets 3 are difficult to absolute being uniformly distributed, therefore multiple magnets 3 magnetic field intensity produced by its arrangement mode is also difficult to be uniformly distributed, and there is dividing of power region, magnetic field.When arranging magnetic conduction sheet 4 in the serpentine channel at target backboard 2, magnetic conduction sheet 4 can occupy the some passages in serpentine channel and the division board portion close to target backboard 2 back side simultaneously, but magnetic conduction sheet 4 increasing in serpentine channel arranges the circulation cycle having no effect on coolant.
The cooling passage of the target backboard 2 that the embodiment of the present invention provides was hollow structure originally, on this basis, increase in the cooling passage of target backboard 2 and magnetic conduction sheet 4 is set, and magnetic conduction sheet 4 is arranged at the magnetic field intensity Qiang district in magnetic field produced by multiple magnet 3, be equivalent to increase the thickness of the magnetic conduction entity in magnetic field intensity Qiang district target backboard 2, and magnetic conduction sheet 4 can absorb magnetic field energy and reduce magnetic field intensity, therefore, the magnetic field intensity through magnetic field intensity Qiang district can be reduced by adding magnetic conduction sheet 4, the magnetic field intensity difference between zones of different is made after target backboard 2 to reduce and reach unanimity, thus make the etch rate to target 1 zones of different approximately the same when magnetron sputtering, then the service life of whole target 1 can be extended, improve the utilization rate of target 1；Simultaneously as during magnetron sputtering, the etch rate of target 1 zones of different is essentially identical, form the film forming thickness on substrate to be coated accordingly also just uniformly, improve formation in the uniformity with the film forming thickness on film plating substrate.
In the present embodiment, produced by multiple magnets 3, the magnetic field intensity Qiang district in magnetic field is positioned at the end of target backboard 2, and magnetic conduction sheet 4 is arranged in the cooling passage of the end of target backboard 2；This is owing to the magnetic field distribution of magnet 3 is relevant with the magnet 3 installation arrangement mode at target backboard 2 back side.Magnet 3 in the present embodiment selects magnet arrangement mode as shown in Figure 4: concrete, target backboard 2 is preferably strip backboard, a part of magnet 3 is spaced at least three row along the length direction of strip backboard, remaining another part magnet 3 is arranged in two row along the width of strip backboard, and two row magnets lay respectively at the relative two ends of strip backboard；The magnetic field intensity Qiang district in magnetic field produced by multiple magnets is positioned at the two ends of strip backboard, is respectively provided with a magnetic conduction sheet in the cooling passage at the two ends of strip backboard.When multiple magnets 3 select above-mentioned arrangement mode, owing to magnet 3 substantially gathers at the two ends of target backboard 2, by stronger for the magnetic field intensity that causes target backboard 2 two ends, as shown in Figure 5, the density of line of magnetic force in the produced magnetic field of magnet 3 is gradually reduced from the two ends, left and right of target 1 to the middle part of target 1, namely magnetic field intensity produced by magnet 3 is gradually reduced from the two ends of target 1 to the middle part of target 1, therefore, a magnetic conduction sheet 4 it is respectively provided with in target backboard 2 two ends, for reducing the magnetic field intensity at target backboard 2 two ends, so as to reach unanimity with the magnetic field intensity in the middle part of target backboard 2, thus making when magnetron sputtering the etch rate of target 1 is reached unanimity.It should be noted that, the shape of target backboard 2 specifically can be determined according to the true form of target 1 and substrate to be coated, accordingly, the arrangement mode of multiple magnets 3 there is also multiple change, the magnetic field distribution that magnet 3 produces also can respective change, but magnetic conduction sheet 4 should be always positioned at Qiang district, magnetic field, its concrete riding position is looked concrete condition and is determined.
In the above-described embodiments, due to the middle part from the two ends of strip backboard to strip backboard, produced by multiple magnets, the magnetic field intensity in magnetic field is gradually reduced；Preferably, as shown in Figure 6, magnetic conduction sheet 4 is wedge shape magnetic conduction sheet, and the thickness of wedge shape magnetic conduction sheet is gradually reduced from one end of strip backboard to the middle part of strip backboard, for coordinating magnetic field intensity produced by magnet 3 by by force to weak change, strengthen the regulating effect to magnetic field intensity produced by magnet 3, make magnetic field distribution produced by magnet 3 tend to uniform.
In the present embodiment, the magnetic conduction sheet 4 particular location in target backboard 2 as in figure 2 it is shown, the bottom surface of wedge shape magnetic conduction sheet is parallel with the back side of target backboard 2, the inclined bottom surface of the inclined-plane opposite wedge magnetic conduction sheet of wedge shape magnetic conduction sheet.The bottom surface of wedge shape magnetic conduction sheet is parallel with the back side of target backboard 2, and placement is installed at the back side pressing close to target backboard 2, it is simple to ensure that wedge shape magnetic conduction sheet is connected with the firm of target backboard 2；The magnetic field intensity rate of change along strip carapace length direction is depended at the angle of inclination of wedge shape magnetic conduction sheet, if magnetic field intensity is high along the rate of change in strip carapace length direction, then the angle of inclination of wedge shape magnetic conduction sheet is big, if magnetic field intensity is low along the rate of change in strip carapace length direction, then the angle of inclination of wedge shape magnetic conduction sheet is little.
In the above-described embodiments, if the arrangement mode of the magnet 3 at target backboard 2 back side changes, then the corresponding magnetic field distribution produced of magnet 3 also can change, now the shape correspondence of magnetic conduction sheet 4 also needs to make change, the visual concrete condition of shape of magnetic conduction sheet 4 is triangular prism shaped, cylindrical etc., with the magnetic field intensity that can reduce magnetic field intensity Qiang district or increase the magnetic field intensity in magnetic field intensity Ruo district for condition.
In order to make the magnetic field distribution that the magnet 3 at target backboard 2 back side produces more uniform, in the present embodiment, as shown in Figure 6, being provided with at least three strip bulge 5 on the inclined-plane of wedge shape magnetic conduction sheet, each strip bulge 5 is just right with a line magnet.Owing to magnetic field intensity is relevant to the distance at a distance of magnet, namely more near at a distance of the distance of magnet, then magnetic field intensity is more big, therefore just region being thickeied further of the magnet 3 that target backboard 2 is arranged with row by wedge shape magnetic conduction sheet by strip bulge 5, just the magnetic field intensity in region being reduced further of the target backboard 2 magnet 3 with row arrangement can be made, namely reduce the magnetic field intensity of most high-intensity magnetic field further, make the magnetic field intensity of the zones of different after target backboard 2 more tend to uniform.
You need to add is that, in order to ensure the circulation cooling effect of coolant in target backboard 2, as shown in Figure 6, the inclined-plane of wedge shape magnetic conduction sheet nonmagnetic body 3 just to region place be provided with groove 6, cooling passage in described groove 6 corresponding connection target backboard 2, for reducing the impact on the cooling passage degree of depth of the wedge shape magnetic conduction sheet, it is ensured that the deep-cycle of coolant, in magnetron sputtering process, target 1 is cooled down.Generally, in the coolant flow direction such as Fig. 5 in the cooling passage of target backboard 2, arrow mark is to shown, magnet 3 arrangement anon-normal to direction, wedge shape magnetic conduction sheet arranges groove 6 and communicates with cooling passage, it is equal in cooling passage, does not increase magnetic conduction sheet, therefore embodiment provided by the invention arranges magnetic conduction sheet 4 in the cooling passage of target backboard 2, the simply local influence degree of depth of cooling passage on the arragement direction of magnet 3, but the quantity to cooling passage, the degree of depth of positive the other side upwards cooling passage of width and nonmagnetic body 3 arrangement there is no impact, therefore the coolant cooling effect to target 1 in target backboard 2 can't be had influence on the whole.
In order to make the magnetic field that magnet 3 produces reach in a wider context uniformly, the distribution curve of magnetic field intensity is more smooth, the thickness of magnetic conduction sheet 4 should according to the magnet 3 at target backboard 2 back side produce magnetic field actual strength distribution specifically set.In the present embodiment, the thickness of magnetic conduction sheet 4 is 2mm-6mm, and the thickness of strip bulge is not less than 2mm.
It should be noted that magnetic conduction sheet 4 is sheet metal.Concrete, magnetic conduction sheet 4 is preferably has magnetic conductivity and resistant to elevated temperatures pure iron sheet, and pure iron sheet can absorb magnetic field energy, and saturation magnetization is high, cheap, good processability.It is understood that magnetic conduction sheet 4 also can be selected for other materials, as long as the intensity appropriateness in magnetic field produced by magnet 3 can be reduced.
It is noted that target 1 is the material being used as negative electrode in magnetron sputtering technique, the needs according to plated film, it is possible to select the target of unlike material, such as ITO target, silicon target, titanium target, stannum target, gold target or tungsten target etc.；Target backboard 2 generally requires have good heat conductivity and enough intensity, uses more for copper coin.
It should be noted that can be integral type structure between magnetic conduction sheet 4 and target backboard 2, it is possible to for split-type structural.In the present embodiment, it is identical with the material of target backboard 2 that magnetic conduction sheet 4 and target backboard 2 are preferably integrated formed structure, particularly magnetic conduction sheet 4, is when having magnetic conductivity and resistant to elevated temperatures metal material, magnetic conduction sheet 4 and target backboard 2 integrally casting molding, then pass through machining and reach instructions for use；Magnetic conduction sheet 4 is one-body molded with target backboard 2, and its simple in construction is easy to use.Certainly, when magnetic conduction sheet 4 and target backboard 2 are Split type structure, magnetic conduction sheet 4 and the material of target backboard 2 can identical also can be different, it is attached by modes such as inlaying, weld, rivet, be bonding between magnetic conduction sheet 4 with target backboard 2, magnetic conduction sheet 4 and target backboard 2 adopt split absolute construction, it is possible to reduce the difficulty of preparation technology.Simply, no matter one-body molded or split-type structural selected by magnetic conduction sheet 4 and target backboard 2, it is preferred that the external structure of target backboard 2 keeps consistent with the external structure of existing target backboard, such then without the Replacement procedure of existing sputtering equipment and target 1 is made change, it is not necessary to extra cost put into.
In embodiments of the present invention, additionally provide a kind of magnetic control sputtering device, including vacuum coating chamber, and be located at the interior target backboard 2 as above of vacuum coating chamber.The operation principle of the magnetic control sputtering device that the embodiment of the present invention provides is as follows: in vacuum coating chamber, magnetic field is introduced by installing multiple magnets 3 at the back side of target backboard 2, utilize magnetic field that the constraint of charged particle makes electronics run at the near surface curl of target 1, increase electronic impact medium and produce the probability of ion, to improve the density of plasma, and the surface that produced ion hits target 1 under electric field action is made to increase sputtering raste thus sputtering target 1.The magnetic control sputtering device that the embodiment of the present invention provides is by the redesign to target backboard 2, the Distribution of Magnetic Field needed for magnetic conduction sheet 4 makes magnetron sputtering is increased relatively uniform in the cooling passage of target backboard 2, so that the effect of contraction of charged particle is kept consistent by magnetic field, the density of the plasma to produce after ensureing electronic impact medium is essentially identical, and make produced ion under electric field action, the sputtering raste of target 1 zones of different be reached unanimity, namely the etch rate of target 1 zones of different is reached unanimity, therefore can improve the utilization rate of target 1；Simultaneously as during magnetron sputtering, the etch rate of target 1 zones of different is essentially identical, form the film forming thickness on substrate to be coated accordingly also just uniformly, improve formation in the uniformity with the film forming thickness on film plating substrate.
In the description of above-mentioned embodiment, specific features, structure, material or feature can combine in an appropriate manner in any one or more embodiments or example.
The above; being only the specific embodiment of the present invention, but protection scope of the present invention is not limited thereto, any those familiar with the art is in the technical scope that the invention discloses; change can be readily occurred in or replace, all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with described scope of the claims.
Claims (10)
1. the target backboard of a magnetron sputtering, it is provided with cooling passage in described target backboard, and the back side of described target backboard is provided with multiple magnet, it is characterized in that, being provided with magnetic conduction sheet in the cooling passage of described target backboard, produced by described magnetic conduction sheet and multiple described magnets, the magnetic field intensity Qiang district in magnetic field is corresponding.
2. the target backboard of magnetron sputtering according to claim 1, it is characterised in that produced by multiple described magnets, the magnetic field intensity Qiang district in magnetic field is positioned at the end of described target backboard, and described magnetic conduction sheet is arranged in the cooling passage of the end of described target backboard.
3. the target backboard of magnetron sputtering according to claim 2, it is characterized in that, described target backboard is strip backboard, a part of described magnet is spaced at least three row along the length direction of described strip backboard, magnet described in remaining another part is arranged in two row along the width of described strip backboard, and the two described magnets of row lay respectively at the relative two ends of described strip backboard；
The magnetic field intensity Qiang district in magnetic field produced by multiple described magnets is positioned at the two ends of described strip backboard, is respectively provided with a described magnetic conduction sheet in the cooling passage at the two ends of described strip backboard.
4. the target backboard of magnetron sputtering according to claim 3, it is characterised in that
From the two ends of described strip backboard to the middle part of described strip backboard, produced by multiple described magnets, the magnetic field intensity in magnetic field is gradually reduced；
Described magnetic conduction sheet is wedge shape magnetic conduction sheet, and the thickness of described wedge shape magnetic conduction sheet is gradually reduced from one end of described strip backboard to the middle part of described strip backboard.
5. the target backboard of magnetron sputtering according to claim 4, it is characterised in that the bottom surface of described wedge shape magnetic conduction sheet is parallel with the back side of described target backboard, the inclined bottom surface of the relatively described wedge shape magnetic conduction sheet in inclined-plane of described wedge shape magnetic conduction sheet.
6. the target backboard of magnetron sputtering according to claim 5, it is characterised in that be provided with at least three strip bulge on the inclined-plane of described wedge shape magnetic conduction sheet, each described strip bulge is just right with magnet described in a line.
7. the target backboard of magnetron sputtering according to claim 6, it is characterised in that the thickness of described magnetic conduction sheet is 2mm-6mm, and the thickness of described strip bulge is not less than 2mm.
8. the target backboard of magnetron sputtering according to claim 1, it is characterised in that described magnetic conduction sheet is sheet metal.
9. the target backboard of magnetron sputtering according to claim 8, it is characterised in that described magnetic conduction sheet and described target backboard are formed in one structure.
10. a magnetic control sputtering device, it is characterised in that include vacuum coating chamber, and be located in described vacuum coating chamber, as arbitrary in claim 1-9 as described in the target backboard of magnetron sputtering.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610290495.5A CN105734516B (en) | 2016-05-04 | 2016-05-04 | The target backboard and magnetic control sputtering device of a kind of magnetron sputtering |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610290495.5A CN105734516B (en) | 2016-05-04 | 2016-05-04 | The target backboard and magnetic control sputtering device of a kind of magnetron sputtering |
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| Publication Number | Publication Date |
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| CN105734516A true CN105734516A (en) | 2016-07-06 |
| CN105734516B CN105734516B (en) | 2018-01-26 |
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| CN201610290495.5A Active CN105734516B (en) | 2016-05-04 | 2016-05-04 | The target backboard and magnetic control sputtering device of a kind of magnetron sputtering |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111349903A (en) * | 2020-05-08 | 2020-06-30 | 台玻太仓工程玻璃有限公司 | Magnetic conduction plate for improving utilization rate of target material |
| CN114481058A (en) * | 2020-11-12 | 2022-05-13 | 株式会社爱发科 | Sputtering device |
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| US4915805A (en) * | 1988-11-21 | 1990-04-10 | At&T Bell Laboratories | Hollow cathode type magnetron apparatus construction |
| CN101418433A (en) * | 2008-10-17 | 2009-04-29 | 湖南玉丰真空科学技术有限公司 | Planar magnetron sputtering cathode capable of improving target material utilization rate |
| CN102725435A (en) * | 2010-09-13 | 2012-10-10 | 新柯隆株式会社 | Magnetic field generator, magnetron cathode, and sputtering device |
| CN203021644U (en) * | 2012-12-31 | 2013-06-26 | 上海子创镀膜技术有限公司 | Cathode magnetic bar device for coating |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4915805A (en) * | 1988-11-21 | 1990-04-10 | At&T Bell Laboratories | Hollow cathode type magnetron apparatus construction |
| CN101418433A (en) * | 2008-10-17 | 2009-04-29 | 湖南玉丰真空科学技术有限公司 | Planar magnetron sputtering cathode capable of improving target material utilization rate |
| CN102725435A (en) * | 2010-09-13 | 2012-10-10 | 新柯隆株式会社 | Magnetic field generator, magnetron cathode, and sputtering device |
| CN203021644U (en) * | 2012-12-31 | 2013-06-26 | 上海子创镀膜技术有限公司 | Cathode magnetic bar device for coating |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111349903A (en) * | 2020-05-08 | 2020-06-30 | 台玻太仓工程玻璃有限公司 | Magnetic conduction plate for improving utilization rate of target material |
| CN111349903B (en) * | 2020-05-08 | 2023-09-05 | 台玻太仓工程玻璃有限公司 | Magnetic conduction plate for improving target utilization rate |
| CN114481058A (en) * | 2020-11-12 | 2022-05-13 | 株式会社爱发科 | Sputtering device |
| CN114481058B (en) * | 2020-11-12 | 2024-02-06 | 株式会社爱发科 | Sputtering apparatus |
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| Publication number | Publication date |
|---|---|
| CN105734516B (en) | 2018-01-26 |
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