CN101928928B - Magnetron sputtering target holder and magnetron sputtering device comprising same - Google Patents
Magnetron sputtering target holder and magnetron sputtering device comprising same Download PDFInfo
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- CN101928928B CN101928928B CN 200910303647 CN200910303647A CN101928928B CN 101928928 B CN101928928 B CN 101928928B CN 200910303647 CN200910303647 CN 200910303647 CN 200910303647 A CN200910303647 A CN 200910303647A CN 101928928 B CN101928928 B CN 101928928B
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- target
- cooling water
- water channel
- bearing part
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Abstract
The invention relates to a magnetron sputtering target holder for bearing a target, which comprises a magnet assembly, a cooling water channel and a bearing part, wherein the bearing part is used to bear the magnetic assembly and the cooling water channel and enables the magnet assembly to abutt the surface of the target, the magnet assembly is composed of a plurality of rows of magnet pillar sets which are arranged at intervals, and each row of the magnet pillar sets comprises a plurality of magnet pillars which are accommodated on the bearing part, the like magnetic poles of all the magnet pillars in the same row have the same orientation to form a magnetic pole, and the magnetic poles formed by two adjacent rows are opposite. The cooling water channel rounds among the rows of the magnet pillar sets. By forming a plurality of magnetic fields through the rows of magnet pillar sets accommodated on the bearing part at intervals and rounding the cooling water channel among the rows of the magnet pillar sets, the effective area on the surface of the target, impacted by ionized gas molecules by means of a plurality of the magnetic fields, and the effective area for target cooling are enlarged, and the utilization ratio and the cooling effect of the target are improved. The invention further relates to a magnetron sputtering device with the magnetron sputtering target holder.
Description
Technical field
The present invention relates to a kind of magnetron sputtering technique, relate in particular to a kind of magnetron sputtering target stand and have the magnetic control sputtering device of this magnetron sputtering target stand.
Background technology
At present, the existing magnetron sputtering target stand that is used to carry a target, it comprises that first magnet set that a bearing part, an annular arrange, is along second magnet set and an annular cooling water road that straight line is arranged.This first magnet set is surrounded this second magnet set, and this annular cooling water road surrounds around this second magnet set and by this first magnet set.This bearing part is used to carry this first magnet set, this second magnet set and this annular cooling water road, and makes this first magnet set and this second magnet set support the surface of this target.The S of this first magnet set is extremely near this target, and extremely near this target, this first magnet set and this second magnet set form a plurality of by the magnetic confining field of the N utmost point to the S utmost point N of this second magnet set.During plated film, the ionized gas molecule bombards target under the effect of a plurality of these magnetic confining fields.
But the actual use zone of the target of this magnetron sputtering target stand correspondence is an annular region, thereby the utilization ratio of this target is lower.
Summary of the invention
In view of this, the magnetic control sputtering device that is necessary to provide the higher magnetron sputtering target stand of a kind of target utilization and has this magnetron sputtering target stand.
A kind of magnetron sputtering target stand, it is used to carry a target, and this magnetron sputtering target stand comprises a magnet assemblies, a cooling water channel and a bearing part.This bearing part is used to carry this magnet assemblies and this cooling water channel and makes this magnet assemblies support the surface of this target.This magnet assemblies comprises that many rows are contained in the magnetic post group on this bearing part at interval, every row's magnetic post group includes a plurality of magnetic posts of accommodating on this bearing part, the like pole of all the magnetic posts in same row's magnetic post group towards identical with common formation one magnetic pole, the magnetic pole that adjacent two rows' magnetic post groups form is opposite.This cooling water channel is set around between these many row's magnetic post groups.
A kind of magnetic control sputtering device, it comprises that a target and is used to carry the magnetron sputtering target stand of this target.This magnetron sputtering target stand comprises a magnet assemblies, a cooling water channel and a bearing part.This bearing part is used to carry this magnet assemblies and this cooling water channel and makes this magnet assemblies support the surface of this target.This magnet assemblies comprises that many rows are contained in the magnetic post group on this bearing part at interval, every row's magnetic post group includes a plurality of magnetic posts of accommodating on this bearing part, the like pole of all the magnetic posts in same row's magnetic post group towards identical with common formation one magnetic pole, the magnetic pole that adjacent two rows' magnetic post groups form is opposite.This cooling water channel is set around between these many row's magnetic post groups.
Compared with prior art, described magnetron sputtering target stand and have the magnetic control sputtering device of this magnetron sputtering target stand, the magnetic post group that is contained at interval on the bearing part by many rows forms a plurality of magnetic fields and is set around this cooling water channels of arranging between magnetic post groups more, not only increase the useful area that the ionized gas molecule utilizes this a plurality of magnetic fields bump target material surface, also increase the useful area of cooling target, promote the utilization ratio and the cooling performance of target.
Description of drawings
The structural representation of the magnetic control sputtering device that Fig. 1 provides for first embodiment of the invention.
The structural representation of the magnetic control sputtering device that Fig. 2 provides for second embodiment of the invention.
Embodiment
Below in conjunction with accompanying drawing embodiment of the present invention is described in further detail.
See also Fig. 1, be the magnetic control sputtering device 200 that first embodiment of the invention provides, it comprises that a target 21, is used to carry the pedestal 27 that the magnetron sputtering target stand 20 of this target 21, a to be coated substrate 23 and relative with this target 21 are used to carry this substrate 23 to be coated.This magnetic control sputtering device 200 is placed on one and is full of in the coating chamber (figure does not show) of argon gas.
Further specify, so-called magnetron sputtering, be meant between negative electrode (being generally used for placing target 21) and anode (being generally used for placing the pedestal 27 of substrate 23 to be coated) and add a quadrature field and electric field, in vacuum film coating chamber, charge into needed rare gas element (being generally argon gas), under effect of electric field, argon gas is ionized into a large amount of ionized gas molecules (positively charged argon ion) and electronics, argon ion quickens bombardment target 21 under effect of electric field, sputter a large amount of target atom, be neutral target atom (or molecule) and be deposited on film forming on the substrate 23 to be coated.Simultaneously, argon ion is emitted secondary electron when bombardment target 21, secondary electron is subjected to the influence of Lip river, magnetic field logical sequence magnetic force in quickening to fly to the process of substrate 23 to be coated, be bound near in the plasma body zone on target 21 surfaces, and plasma density is very high in this zone.Under the acting in conjunction of electromagnetic field, the movement locus of secondary electron is to quicken along direction of an electric field, simultaneously around field direction spiral progressive complex curve, make that the movement path of this secondary electron is elongated, in moving process, constantly go out a large amount of argon ions to bombard target 21 with the argon gas ionization that bumps.Through after repeatedly colliding, the energy of secondary electron reduces gradually, away from target 21, finally flies to substrate 23 to be coated with extremely low energy, makes that the intensification of substrate 23 to be coated is lower like this.
In the present embodiment, constitute an electric field as anodic pedestal 27 and target 21 as negative electrode.This magnetic control sputtering device 200 is placed on one and is full of in the coating chamber of argon gas, this argon gas goes out ionized argon molecules in this effect of electric field in ionization, this argon molecules is clashed into this target 21, make this target 21 sputter a large amount of target atom, be the neutral target atom and be deposited on film forming on this substrate 23 to be coated.
This magnetron sputtering target stand 20 comprises a magnet assemblies 22, a cooling water channel 24 and a bearing part 26.This bearing part 26 is used to carry this magnet assemblies 22 and this cooling water channel 24 and makes this magnet assemblies 22 support the surface of this target 21.This cooling water channel 24 is set around on this magnet assemblies 22.
This magnet assemblies 22 comprises that many rows are contained in the magnetic post group 220 on this bearing part 26 at interval, and every row's magnetic post group 220 includes a plurality of magnetic posts 222 of accommodating on this bearing part 26.The like pole of all the magnetic posts 222 in same row's magnetic post group 220 towards identical with common formation one magnetic pole, the magnetic pole that adjacent two rows' magnetic post groups 220 form is opposite.Present embodiment illustrates with the magnet assemblies 22 that the magnetic post group 220 of being arranged by 12 rows constitutes.Select any one in the magnet assemblies 22 to arrange a that is numbered of magnetic post group 220, the N utmost point that makes all the magnetic posts 222 in this magnetic post group 220 that is numbered a is towards the direction setting away from this target 21, this N that is numbered all the magnetic posts 222 in the magnetic post group 220 of a forms a N utmost point extremely jointly, and very this is numbered the magnetic pole of the magnetic post group 220 of a to this N.According to adjacent two rows' the opposite principle of magnetic pole of magnetic post groups 220, with this magnetic pole that is numbered two adjacent magnetic post groups 220 of the magnetic post group 220 of a be the S utmost point.By that analogy, 12 of this magnet assemblies 22 rows' magnetic post group 220 forms 2 on the surface of this target 21
12-1The individual magnetic confining field that moves towards the S utmost point by the N utmost point.When plated film, argon ion this 2
12-1The effect of the individual magnetic confining field useful area on bump target 21 surfaces down increases, and the actual zone of using of this target 21 is 12-1 plaque shape zone 210, has improved the utilization ratio of this target 21.
What this bearing part 26 comprised that a plurality of accepting holes 261 that are used to accommodate this magnetic post 222 and one is used to accommodate this cooling water channel 24 accommodates passage 263.This cooling water channel 24 comprises a water-in that is used to pour water 241 and a water outlet 243 that is used for draining.This cooling water channel 24 is set around between adjacent two rows' the magnetic post group 220.When this cooling water channel 24 used, from these water-in 241 water inlets, this cooling water channel 24 of process was taken away the heat on this magnetic post 222 and this target 21, and from water outlet 243 water outlets.Because when plated film, argon ion impacts target 21, target 21 is heated up, influence film-plating process, thereby influence the plated film quality; Target 21 transmits heat and gives magnetic post 222 simultaneously, the phenomenon that magnetic post 222 is produced because of the demagnetization of being heated.Therefore this cooling water channel 24 need be set, cooling water channel 24 in the present embodiment is set around between adjacent two rows' the magnetic post group 220, increased the cooling area of target 21, made target 21 cooling performances preferable, eliminated the influence of temperature film-plating process with this magnetic post group 220; Simultaneously, make these magnetic post 222 cooling performances preferable, reduced the phenomenon of this magnetic post 222, prolonged the work-ing life of this magnetic post 222 because of the demagnetization of being heated.
See also Fig. 2, be the magnetic control sputtering device 300 that second embodiment of the invention provides, the difference of the magnetic control sputtering device 200 that itself and first embodiment provide is: the cooling water channel 34 of this magnetic control sputtering device 300 is embedded in a side of bearing part 36 close targets 31 so that this cooling water channel 34 supports the surface of this target 31.
This magnetic control sputtering device 300 is compared with the magnetic control sputtering device 200 of first embodiment, and the cooling performance of target 31 is better.
Though the present invention discloses as above with better embodiment,, it is not in order to qualification the present invention, and in addition, those skilled in the art can also do other variation etc. in spirit of the present invention.Certainly, the variation that these are done according to spirit of the present invention all should be included within the present invention's scope required for protection.
Claims (8)
1. magnetron sputtering target stand, it is used to carry a target, this magnetron sputtering target stand comprises a magnet assemblies, one cooling water channel and a bearing part, this bearing part is used to carry this magnet assemblies and this cooling water channel and makes this magnet assemblies support the surface of this target, it is characterized in that, this magnet assemblies comprises that many rows are contained in the magnetic post group on this bearing part at interval, every row's magnetic post group includes a plurality of magnetic posts that are contained on this bearing part, the like pole of all the magnetic posts in same row's magnetic post group towards identical with common formation one magnetic pole, the magnetic pole that adjacent two rows' magnetic post group forms is opposite, and this cooling water channel is set around between adjacent two rows' the magnetic post group.
2. magnetron sputtering target stand as claimed in claim 1 is characterized in that, this bearing part is offered a plurality of accepting hole and passages of accommodating that are used to accommodate this cooling water channel that are used to accommodate these a plurality of magnetic posts.
3. magnetron sputtering target stand as claimed in claim 1 is characterized in that, this cooling water channel comprises a water-in that is used to pour water and a water outlet that is used for draining.
4. magnetron sputtering target stand as claimed in claim 1 is characterized in that, this cooling water channel is embedded in a side of close this target of this bearing part so that this cooling water channel supports the surface of target.
5. magnetic control sputtering device, it comprise a target and one its be used to carry the magnetron sputtering target stand of this target, this magnetron sputtering target stand comprises a magnet assemblies, one cooling water channel and a bearing part, this bearing part is used to carry this magnet assemblies and this cooling water channel and makes this magnet assemblies support the surface of this target, it is characterized in that, this magnet assemblies comprises that many rows are contained in the magnetic post group on this bearing part at interval, every row's magnetic post group includes a plurality of magnetic posts that are contained on this bearing part, the like pole of all the magnetic posts in same row's magnetic post group towards identical with common formation one magnetic pole, the magnetic pole that adjacent two rows' magnetic post group forms is opposite, and this cooling water channel is set around between adjacent two rows' the magnetic post group.
6. magnetic control sputtering device as claimed in claim 5 is characterized in that, this bearing part is offered a plurality of accepting hole and passages of accommodating that are used to accommodate this cooling water channel that are used to accommodate these a plurality of magnetic posts.
7. magnetic control sputtering device as claimed in claim 5 is characterized in that, this cooling water channel comprises a water-in that is used to pour water and a water outlet that is used for draining.
8. magnetic control sputtering device as claimed in claim 5 is characterized in that, this cooling water channel is embedded in a side of close this target of this bearing part so that this cooling water channel supports the surface of target.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910303647 CN101928928B (en) | 2009-06-25 | 2009-06-25 | Magnetron sputtering target holder and magnetron sputtering device comprising same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910303647 CN101928928B (en) | 2009-06-25 | 2009-06-25 | Magnetron sputtering target holder and magnetron sputtering device comprising same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101928928A CN101928928A (en) | 2010-12-29 |
| CN101928928B true CN101928928B (en) | 2013-07-31 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200910303647 Expired - Fee Related CN101928928B (en) | 2009-06-25 | 2009-06-25 | Magnetron sputtering target holder and magnetron sputtering device comprising same |
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| CN104157321B (en) * | 2014-08-04 | 2017-02-15 | 大连民族学院 | Low energy big flow and strong irradiation device for materials |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1621559A (en) * | 2003-11-28 | 2005-06-01 | 中国科学院金属研究所 | Magnetron sputtering target capable of improving the availability of target materials |
| CN1944707A (en) * | 2006-09-27 | 2007-04-11 | 中国科学院上海光学精密机械研究所 | Permanent magnet gun target device for magnetic control sputtering film coating machine |
| CN201068469Y (en) * | 2007-05-15 | 2008-06-04 | 北京京东方光电科技有限公司 | Flat surface magnetron sputtering target capable of prolonging target material service lifetime |
-
2009
- 2009-06-25 CN CN 200910303647 patent/CN101928928B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1621559A (en) * | 2003-11-28 | 2005-06-01 | 中国科学院金属研究所 | Magnetron sputtering target capable of improving the availability of target materials |
| CN1944707A (en) * | 2006-09-27 | 2007-04-11 | 中国科学院上海光学精密机械研究所 | Permanent magnet gun target device for magnetic control sputtering film coating machine |
| CN201068469Y (en) * | 2007-05-15 | 2008-06-04 | 北京京东方光电科技有限公司 | Flat surface magnetron sputtering target capable of prolonging target material service lifetime |
Non-Patent Citations (2)
| Title |
|---|
| JP特开11-50249A 1999.02.23 |
| JP特开2001-32067A 2001.02.06 |
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| CN101928928A (en) | 2010-12-29 |
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