CN105679938A - Screw-ring micromolecule floating-gate type organic field effect transistor storage and preparation method therefor - Google Patents
Screw-ring micromolecule floating-gate type organic field effect transistor storage and preparation method therefor Download PDFInfo
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Abstract
The invention relates to the field of a micromolecule-based organic nonvolatile field effect transistor storage, and discloses a screw-ring micromolecule floating-gate type organic field effect transistor storage and a preparation method therefor. The storage comprises a source electrode, a drain electrode, a semiconductor layer, a tunneling layer, a floating gate layer, a charge barrier layer and a gate insulating layer from upper to lower in sequence, wherein the tunneling layer, the floating gate layer and the charge barrier layer form a charge capturing layer together. The transistor storage provided by the invention is prepared by adopting a solution processing method, so that the preparation method is simple and convenient to operate, low in cost, and energy-saving; the large-scale batch production of the charge capturing layer that is a smooth micromolecule screw-ring material layer and a high-dielectric-constant polymer composite nanometer thin film can be facilitated; the storage obtains a high-density, stable and nonvolatile storage performance, and relatively high mobility and switching ratio (104); and in addition, the storage has simple operation process and relatively low cost, so that the popularization and the production of the storage can be carried out conveniently.
Description
Technical field
The invention belongs to organic field effect tube memory device field, particularly relate to ambipolar organic field effect tube memorizer with little molecule floating gate type and preparation method thereof.
Background technology
High performance organic memory cell is ingredient required in the application such as organic integrated circuits, RFID tag (RFIDTags), large-area displays. Meanwhile, compared with traditional inorganic semiconductor device, have that cost is low based on the device of organic semiconducting materials, large area processing can be realized, can be integrated with flexible substrates etc. advantage; Also have that available single transistor realizes, non-destructive reads based on the memorizer of organic field effect tube, be prone to the advantage such as integrated with organic circuit, be therefore considered as a class organic memory device most with application prospect.
Difference according to operation principle and device architecture, the organic non-volatile memorizer of research both at home and abroad can be divided into based on the floating gate type of organic field effect tube structure, electret type and ferroelectric type memory device at present. OFET (organicfieldeffecttransistor) memorizer is generally wiped the performance parameters such as circulation with transistor input-output characteristic, memory window, carrier mobility, write erasing speed, memory retention time and read-write and is characterized. Nowadays existing substantial amounts of research work is devoted to realize high density, the non-volatile high-performance of high speed stores. Wherein organic nano floating gate type transistorized memory receives much concern owing to can be applied to flexible and scalability storage device, under certain DC Electric Field, it is embedded in the floating gate layer nanoparticle between electric charge barrier layer and tunnel layer by catching and discharging the write and erasing that realize storage electric charge carrier. But this scattered nanoparticle pattern is difficult to accurately to control and density is limited, and electric charge is relatively low at the mobility of floating gate layer, therefore generally more difficult realize highdensity memory property. And take the method for the size little molecule floating boom within 1nm can solve this problem well.
Small molecule material has stable performance, molecule and electronic structure definition clearly and can carry out the advantages such as electronic structure and the design that can be with according to demand, but compared to polymer electric charge store in extensive use, it is devoted to small molecule material to be applied to stable non-volatile charge storage also seldom, only C60, AlQ3 etc. that application is more at present, and generally mobility is relatively low, it is more difficult to realize high performance storage.As can be seen here, there is the electric charge problem that mobility is low and memory density is limited at floating gate layer in nanometer floating gate type memory always, it is more difficult to realizes high performance storage.
Summary of the invention
In view of prior art exists above-mentioned technical problem, the present invention proposes a kind of method that the ease of solubility small molecule material and the blended spin coating of hydrophobicity high dielectric constant polymer PS with excellent charge-trapping ability are fabricated to the storage of a kind of little molecule-type floating boom, efficiently solve the problem that the memory density existing for general nanometer of floating gate type memory is relatively low, technique is more complicated, achieve based on the high density of small molecule material, non-volatile memories, and preparation technology simply can accurately control, effectively advance small molecule material and be applied to the progress of storage.
For solving above-mentioned technical problem, the technical solution adopted in the present invention is as follows:
A kind of molecule floating gate type organic field effect tube (OFET) memorizer based on little molecule spiro material, including source-drain electrode, semiconductor layer, tunnel layer, floating gate layer, electric charge barrier layer, gate insulation layer from top to bottom successively, wherein tunnel layer, floating gate layer, electric charge barrier layer have been together to form electric charge capture layer. It is characterized in that: electric charge capture layer is structurally the composite nano film of little molecule volution one layer smooth and high dielectric constant polymer. This floating gate type OFET memorizer not only enormously simplify processing technology, adopts the mode of molecule floating boom also to improve more greatly memory density simultaneously.
Heretofore described floating gate layer is the composite nano film of one layer of small molecule material SFDBAO and polymer P S of blended spin coating, Film roughness is relatively low, very smooth, compared to common nanoparticle form floating boom, it is effectively improved charge-trapping density and the electric charge mobility in floating gate layer. And, the composite nano film of SFDBAO and PS simultaneously as hole and electronics trapping layer, can produce bigger positive and negative two-way memory window, and keep the stability of long period. So, just improve the electric charge of OFET memorizer in the mobility of floating gate layer and memory density.
In further technical scheme, the foot of described floating gate type OFET memorizer also includes substrate and is formed at the gate electrode of substrate.
Little molecule volution in described composite nano film is spiral shell [fluorenes-9,7-dibenzo [c, h] acridine-5-ketone] (SFDBAO), it can be prepared by green day photooxidation reaction, and stability is better, containing hydroxyl and steric hindrance structure in molecular formula, and there is higher electron-withdrawing power, be conducive to catching electric charge, and dissolubility is better, it is easy to spin coating; Polymer is selected from high dielectric constant polymer material, and described high dielectric constant polymer material is common polystyrene PS. Described SFDBAO and PS is spun on described gate insulation layer by solution mode is blended. The structural formula of described SFDBAO is as follows:
The composite nano film of above-mentioned SFDBAO and PS as the mixing mol ratio of electric charge capture layer is: SFDBAO:PS=1:5-25, it is preferred to 1:10; The thickness of described thin film is 30-45nm.
SFDBAO material provides higher hole capture density. The addition of PS material has been greatly improved holding time and stability of memory device, all without the situation of obvious charge leakage within 50,000 second testing time. Device provided by the present invention can catch hole and electronics under applied voltage effect simultaneously, has positive and negative two-way big memory window (positive and negative two-way write window all can reach about 70V).Well PS is caught electronics and SFDBAO catches the ability integration in hole on a device.
Described substrate is selected from highly doped silicon chip, sheet glass or plastics PET. The material that described gate electrode adopts is selected from highly doped silicon, aluminum, copper, silver, gold, titanium or tantalum. The material that described gate insulation layer adopts is selected from silicon dioxide, aluminium oxide, zirconium oxide, polystyrene PS or polyvinylpyrrolidone PVP, and the film thickness of described gate insulation layer is 100-300nm. Described floating gate layer structure is little molecule floating boom or metal nanoparticle floating boom etc. The material that described semiconductor layer adopts is selected from Benzo[b, aphthacene, titan bronze, rubrene, anthracene or 3-hexyl thiophene, described quasiconductor adopts thermal vacuum evaporation film-forming method film forming, covering formation conducting channel on tunnel layer surface, its thickness is 40-50nm. Described source-drain electrode materials is metal or organic conductor material, and its thickness is 100nm.
In further technical scheme, the device architecture of described OFET memorizer from inside to outside respectively highly doped silicon chip as the silicon dioxide (SiO of substrate and gate electrode, 300nm2) as gate insulation layer, SFDBAO and the PS of 35nm composite nano film as electric charge capture layer, Benzo[b as semiconductor layer, gold as source-drain electrode.
For its memory window characteristic curve of memory test of the present invention, it is known that write window is very big, and can realize two-way write and erasing, and display device has good memory characteristics; Its write-read-erasing-this memorizer of reading performance data also surface has good repeatedly erasable ability, and after the erasable circulation of longer cycle, the erasable window of device is substantially free of change; For its data holding ability, through after 50,000 seconds, the electric charge of storage is still sufficiently stable, illustrates that the memory reliability of device is higher.
The preparation method that present invention also offers above-mentioned OFET memory device, specifically includes following steps:
(1) choosing the little molecule volution with excellent charge-trapping ability and high dielectric constant polymer, be dissolved in toluene, preparation becomes blend solution, and solution concentration is 5-15mg/ml, it is preferred that concentration is 5mg/ml; The blend solution configured is passed through the ultrasonic Treatment 10-15min of 80KHz, stands 5h afterwards so that it is fully dissolve;
(2) select suitable gate electrode and gate insulation layer substrate, clean up substrate post-drying;
(3) blend solution in clean substrate surface spin-coating step (1), puts into the sample that spin coating is good in 80 DEG C of baking ovens and dries, it is thus achieved that laminated film floating gate layer;
(4) vacuum evaporation semiconductor layer and source-drain electrode above laminated film floating gate layer after the drying.
Mixing mol ratio in step (1) small molecular volution and high dielectric constant polymer is: SFDBAO:PS=1:5-25, it is preferred to 1:10. Described little molecule volution is spiral shell [fluorenes-9,7-dibenzo [c, h] acridine-5-ketone] (SFDBAO), it can be prepared by green day photooxidation reaction, and stability is better, containing hydroxyl and steric hindrance structure in molecular formula, and there is higher electron-withdrawing power, be conducive to catching electric charge, and dissolubility is better, it is easy to spin coating; Described polymer is selected from high dielectric constant polymer material, and described high dielectric constant polymer material is common polystyrene PS. The structural formula of described SFDBAO is as follows:
The material that gate electrode described in step (2) adopts is selected from highly doped silicon, aluminum, copper, silver, gold, titanium or tantalum; The material that described gate insulation layer adopts is selected from silicon dioxide, aluminium oxide, zirconium oxide, polystyrene PS or polyvinylpyrrolidone PVP, and the film thickness of described gate insulation layer is 100-300nm.
In step (3), spincoating conditions parameter is: rotating speed 3000rps, and the time sets 30 seconds, and it is 30-45nm that spin coating controls the thickness of thin film; Described floating gate layer structure is little molecule floating boom or metal nanoparticle floating boom etc.;
The material that semiconductor layer described in step (4) adopts is selected from Benzo[b, aphthacene, titan bronze, rubrene, anthracene or 3-hexyl thiophene, and its thickness is 40-50nm; Described source-drain electrode materials is metal or organic conductor material, and its thickness is 100nm.
Described in step (4), the evaporation rate of vacuum evaporation semiconductor layer isVacuum degree control is 5 × 10-4pa-2×10-5Pa, the evaporation rate of described vacuum evaporation source-drain electrode is
There is advantages that
1, OFET memorizer provided by the present invention has the high hole of little molecule spiro material simultaneously and catches the length of density and high dielectric constant polymer material and hold time and high stability, all without the situation of obvious charge leakage within 50,000 second testing time.
2, OFET memory device provided by the present invention not only has holding time, having multistage storage function and have higher mobility (0.55cm of excellence2V-1S-1) and on-off ratio (104)。
3, device provided by the present invention adopts solution processing method to prepare, easy and simple to handle, with low cost, saves the energy, is conducive to large-scale batch production.
Accompanying drawing explanation
Fig. 1 is OFET memory device junction composition of the present invention.
Fig. 2 is the AFM shape appearance figure of the SFDBAO molecule floating gate layer composite nano film of embodiment 1 preparation;
Fig. 3 is the AFM shape appearance figure of the semiconductor layer pentacene thin film of embodiment 1 preparation;
Fig. 4 is the transfer characteristic curve of the organic field effect tube memory test of embodiment 1 preparation;
Fig. 5 is the output characteristic curve of the organic field effect tube memory test of embodiment 1 preparation;
Fig. 6 is the memory window characteristic curve of the organic field effect tube memory test of embodiment 1 preparation;
Cycle characteristics curve is wiped in the read-write that Fig. 7 is the organic field effect tube memory test of embodiment 1 preparation;
Fig. 8 is the characteristic curve of holding time of the organic field effect tube memory test of embodiment 1 preparation;
Detailed description of the invention
Set forth that the present invention's realizes method below in conjunction with specific embodiment. But protection scope of the present invention is not by the restriction of assistant's embodiment.
Embodiment 1
The OFET memory device structures that the present embodiment relates to is as shown in Figure 1, a kind of organic field effect tube memorizer using composite nanometer film as electric charge capture layer, it includes source-drain electrode, semiconductor layer, tunnel layer, floating gate layer, electric charge barrier layer from top to bottom successively, gate insulation layer, wherein tunnel layer, floating gate layer, electric charge barrier layer have been together to form electric charge capture layer. Electric charge capture layer is the composite nano film of little molecule volution one layer smooth and high dielectric constant polymer. The bottom of described memorizer also includes substrate and is formed at the gate electrode of substrate.
Wherein, using the silicon of n-type doping as grid, the SiO of the 300nm of growth on it2As gate insulation layer; Electric charge capture layer is spun on described gate insulation layer to obtain by solution mode is blended with the ratio that mol ratio is 1:10 by spiral shell [fluorenes-9,7-dibenzo [c, h] acridine-5-ketone] (SFDBAO) and polystyrene PS, and its thickness is 35nm; Benzo[b (Pentacene) one layer thick for 50nm is as semiconductor layer; Then face is deposited with the gold of one layer of 100nm as metal electrode on the semiconductor layer.
Wherein PS is a kind of conventional polymer electret material, as electronics trapping layer.PENTACENE is a kind of conventional semi-conducting material, in the present invention, for the consideration of level-density parameter and carrier transport balance aspect, hole capture material selection SFDBAO.
SFDBAO is a kind of little molecule of spirane structure, and structural formula is as follows:
PS (polystyrene) buys from Aldrich chemical reagents corporation.
PENTACENE (Benzo[b) buys from Aldrich chemical reagents corporation.
The concrete preparation process of the OFET memorizer of the present embodiment is:
When prepared by reality, in laboratory, room temperature remains at less than 30 DEG C, and humidity is always less than 35%.
(1) by SFDBAO and PS with mol ratio be 1:10 ratio blended, be dissolved in toluene, prepare into blend solution, the concentration of solution is 5mg/ml; The blend solution configured is passed through the ultrasonic Treatment 10-15min of 80KHz, stands 5h afterwards so that it is fully dissolve. (2) Si of n-type doping is chosen as grid, the SiO of the 300nm of growth on it2As insulating barrier, the Si/SiO2 sheet cutting of purchase is become 1.5mm square piece; The substrate of the 1.5cm*1.5cm cut first alcohol swab is dipped in gently and washes, remove fingerprint surface spot etc., clean 10 minutes then in turn through EtOH Sonicate, acetone ultrasonic cleaning 10 minutes, clean 2 times, ultra-pure water ultrasonic cleaning afterwards 10 minutes, blows off with nitrogen afterwards and puts into 100 DEG C of oven for drying; Substrate after drying is placed in the UV ozone processing instrument that power is 100W and carries out UV ozone processes 5 minutes.
(3) at the blend solution of clean one layer of step (1) PS and SFDBAO of substrate surface spin coating as electric charge capture layer; Spin coating adopts the rotating speed spin coating 30s of 3000rps, obtains the uniform thin film of one layer of about 35nm; The substrate that spin coating is good is put into the 30min that anneals at 80 DEG C in air dry oven, it is thus achieved that laminated film floating gate layer. (4) and then the substrate that above-mentioned steps (3) has been moved back fire is transferred in multi-source organic molecule vacuum evaporation system, is evacuated to chamber pressure lower than 5 × 10-4After Pa, keep at this pressure then withSpeed be deposited with Pentacene thick for one layer of 50nm as semiconductor layer, stop after heating under this vacuum state, source temperature to be evaporated is cooled to less than 60 DEG C, is taken out by substrate after about 20 minutes; Then above-mentioned substrate is put in multi-source metal vacuum deposition system, be evacuated to chamber pressure lower than 5 × 10-4After Pa, withSpeed evaporation one layer of 100nm gold as field-effect transistor memorizer electrode; After plated film terminates, keeping under this vacuum state, treat that cooling of electrode is to room temperature, then takes out substrate, the excellence that has obtaining prepared by solution processing method is held time and can the little molecule floating gate type organic field effect tube memorizer of multistage storage.
After prepared by device, its electric property is characterized by Keithley 4200, Agilent B1500 semiconductor analysis instrument, and as shown in Figure 4, mobility reaches 0.55cm to the transfer curve that data process is depicted as2/ Vs, on-off ratio reaches 104。
Fig. 2 is the AFM shape appearance figure of SFDBAO molecule floating gate layer composite nano film, it is seen that the laminated film roughness of the SFDBAO&PS of blended spin coating is very low, very smooth, is conducive to promoting charge-trapping density and carrier mobility.
Fig. 3 is the AFM shape appearance figure of semiconductor layer pentacene thin film, it can be seen that the growth of Benzo[b granule is better, so that transistor device has higher carrier mobility.
Fig. 6 is the memory window characteristic curve of device detection, it can be seen that the write window of device is very big, and can realize two-way write and erasing, and display device has good memory characteristics.
Write-reading-the erasing of Fig. 7-this memorizer of reading performance data also surface has good repeatedly erasable ability, and after the erasable circulation of longer cycle, the erasable window of device is substantially free of change.
Shown in Fig. 8 is device data holding capacity, and as can be seen from the figure through after 50,000 seconds, the electric charge of storage is still sufficiently stable, illustrates that the memory reliability of device is higher.
Embodiment 2
Embodiment 2 is totally identical in structure and preparation process with embodiment 1, only following difference:
The blended mol ratio of SFDBAO and PS is 1:5, and the concentration of blend solution is 10mg/ml; Choose the Si of n-type doping as grid, the SiO of the 200nm of growth on it2As insulating barrier; The thickness of electric charge capture layer is 30nm, and the thickness of semiconductor layer is 40nm.
Embodiment 3
Embodiment 3 is totally identical in structure and preparation process with embodiment 1, only following difference:
The blended mol ratio of SFDBAO and PS is 1:25, and the concentration of blend solution is 15mg/ml; Choose the Si of n-type doping as grid, the SiO of the 100nm of growth on it2As insulating barrier; The thickness of electric charge capture layer is 45nm, and the thickness of semiconductor layer is 45nm.
All test result surfaces, a kind of composite nano film using volution and polystyrene involved in the present invention is as the organic field effect tube memory device excellent combination property of electric charge capture layer, good stability, data keep reliability high, and preparation process is simple to operate, with low cost, main processes completes in the solution, saves the energy, and can large-scale production.
The present invention adopts the mode of a kind of little molecule spiro material Yu the blended spin-coating film of polymer P S, successfully prepare little molecule floating gate type organic transistor memorizer, achieve the multistage storage of high mobility, and there is the non-volatile and stable read-write wiping toleration of excellence, effectively advance small molecule material and be applied to the progress of storage, and preparation technology is simple, important in inhibiting is promoted in the commercialization for organic transistor memorizer.
Claims (10)
1. a volution little molecule floating gate type organic field effect tube memorizer, it includes source-drain electrode, semiconductor layer, tunnel layer, floating gate layer, electric charge barrier layer from top to bottom successively, gate insulation layer, wherein tunnel layer, floating gate layer, electric charge barrier layer have been together to form electric charge capture layer, it is characterised in that: electric charge capture layer is the composite nano film of little molecule volution one layer smooth and high dielectric constant polymer.
2. organic field effect tube memorizer according to claim 1, it is characterised in that: the bottom of described memorizer also includes substrate and is formed at the gate electrode of substrate, for bottom gate top contact type field-effect transistor structure.
3. organic field effect tube memorizer according to claim 1 and 2, it is characterized in that: the little molecule spiro material in described composite nano film is spiral shell [fluorenes-9,7-dibenzo [c, h] acridine-5-ketone] (SFDBAO), it can be prepared by green day photooxidation reaction; Described high dielectric constant polymer is polystyrene (PS).
4. organic field effect tube memorizer according to claim 3, it is characterised in that: described SFDBAO and PS is spun on described gate insulation layer by solution mode is blended.
5. organic field effect tube memorizer according to claim 4, it is characterised in that: the composite nano film of described SFDBAO and PS as the mixing mol ratio of electric charge capture layer is: SFDBAO:PS=1:5-25; The thickness of described thin film is 30-45nm.
6. floating gate type organic field effect tube memorizer according to claim 1 and 2, it is characterised in that:
Described substrate is selected from highly doped silicon chip, sheet glass or plastics PET;
The material that described gate electrode adopts is selected from highly doped silicon, aluminum, copper, silver, gold, titanium or tantalum;
The material that described gate insulation layer adopts is selected from silicon dioxide, aluminium oxide, zirconium oxide, polystyrene PS or polyvinylpyrrolidone PVP, and the film thickness of described gate insulation layer is 100-300nm;
Described floating gate layer structure is little molecule floating boom or metal nanoparticle floating boom;
The material that described semiconductor layer adopts is selected from Benzo[b, aphthacene, titan bronze, rubrene, anthracene or 3-hexyl thiophene, described quasiconductor adopts thermal vacuum evaporation film-forming method film forming, covering formation conducting channel on tunnel layer surface, its thickness is 40-50nm;
Described source-drain electrode materials is metal or organic conductor material, and its thickness is 100nm.
7. the preparation method of the organic field effect tube memorizer as described in any one of claim 1-6, it is characterised in that comprise the steps:
(1) choosing the little molecule spiro material of the ease of solubility with excellent charge-trapping ability and hydrophobicity high dielectric constant polymer, be dissolved in hydrophobic solvent toluene, be configured as blend solution, solution concentration is 5-15mg/ml; The blend solution configured is passed through 80KHz ultrasonic Treatment 10-15min, stands 5h afterwards so that it is fully dissolve;
(2) select suitable gate electrode and gate insulation layer substrate, clean up substrate post-drying;
(3) blend solution in clean substrate surface spin-coating step (1), puts into the sample that spin coating is good and dries acquisition laminated film floating gate layer in 80 DEG C of baking ovens;
(4) vacuum evaporation semiconductor layer and source-drain electrode above laminated film floating gate layer after the drying.
8. preparation method according to claim 7, it is characterized in that: step (1) small molecular volution is spiral shell [fluorenes-9,7-dibenzo [c, h] acridine-5-ketone] (SFDBAO), described polymeric material is PS, the best mixing mol ratio of the two is: SFDBAO:PS=1:10, the optium concentration being dissolved in the solution of toluene is 5mg/ml.
9. preparation method according to claim 7, it is characterised in that: the material that gate electrode described in step (2) adopts is selected from highly doped silicon, aluminum, copper, silver, gold, titanium or tantalum; The material that described gate insulation layer adopts is selected from silicon dioxide, aluminium oxide, zirconium oxide, polystyrene PS or polyvinylpyrrolidone PVP, and the film thickness of described gate insulation layer is 100-300nm; In step (3), spincoating conditions parameter is: rotating speed 3000rps, and the time sets 30 seconds, and it is 30-45nm that spin coating controls the thickness of thin film; Described floating gate layer structure is little molecule floating boom or metal nanoparticle floating boom etc.; The material that semiconductor layer described in step (4) adopts is selected from Benzo[b, aphthacene, titan bronze, rubrene, anthracene or 3-hexyl thiophene, and its thickness is 40-50nm; Described source-drain electrode materials is metal or organic conductor material, and its thickness is 100nm.
10. preparation method according to claim 7, it is characterised in that: described in step (4), the evaporation rate of vacuum evaporation semiconductor layer isVacuum degree control is 5 × 10-4pa-2×10-5Pa; The evaporation rate of described vacuum evaporation source-drain electrode
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080157128A1 (en) * | 2006-09-14 | 2008-07-03 | Johns Hopkins University | Methods for producing multiple distinct transistors from a single semiconductor |
| EP2299482A2 (en) * | 2003-10-06 | 2011-03-23 | Massachusetts Institute Of Technology | Non-volatile memory device |
| CN102110777A (en) * | 2011-01-20 | 2011-06-29 | 大连交通大学 | Organic floating gate field effect transistor and preparation method thereof |
| CN102229565A (en) * | 2011-05-10 | 2011-11-02 | 南京邮电大学 | Spirofluorene bisbenzoacridine organic semiconductor material, preparation method and use method thereof |
| CN103214900A (en) * | 2013-04-24 | 2013-07-24 | 南京邮电大学 | Waste-based organic nano-ink applied to film device process, and preparation and application of waste-based organic nano-ink |
| CN104993052A (en) * | 2015-06-25 | 2015-10-21 | 南京邮电大学 | OFET memory having porous-structure tunneling layer and manufacturing method thereof |
-
2016
- 2016-02-04 CN CN201610080277.9A patent/CN105679938B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2299482A2 (en) * | 2003-10-06 | 2011-03-23 | Massachusetts Institute Of Technology | Non-volatile memory device |
| US20080157128A1 (en) * | 2006-09-14 | 2008-07-03 | Johns Hopkins University | Methods for producing multiple distinct transistors from a single semiconductor |
| CN102110777A (en) * | 2011-01-20 | 2011-06-29 | 大连交通大学 | Organic floating gate field effect transistor and preparation method thereof |
| CN102229565A (en) * | 2011-05-10 | 2011-11-02 | 南京邮电大学 | Spirofluorene bisbenzoacridine organic semiconductor material, preparation method and use method thereof |
| CN103214900A (en) * | 2013-04-24 | 2013-07-24 | 南京邮电大学 | Waste-based organic nano-ink applied to film device process, and preparation and application of waste-based organic nano-ink |
| CN104993052A (en) * | 2015-06-25 | 2015-10-21 | 南京邮电大学 | OFET memory having porous-structure tunneling layer and manufacturing method thereof |
Non-Patent Citations (1)
| Title |
|---|
| CHEN SUN ET AL.: "Dipole Moment Effect of Cyano-Substituted Spirofluorenes on Charge Storge for Organic Transistor Memory", 《J. PHYS. CHEM. C》 * |
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