CN105679853A - 基于纳米线技术的新型片上集成光耦 - Google Patents
基于纳米线技术的新型片上集成光耦 Download PDFInfo
- Publication number
- CN105679853A CN105679853A CN201610059114.2A CN201610059114A CN105679853A CN 105679853 A CN105679853 A CN 105679853A CN 201610059114 A CN201610059114 A CN 201610059114A CN 105679853 A CN105679853 A CN 105679853A
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- optocoupler
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- sensitive diode
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- 239000002070 nanowire Substances 0.000 title claims abstract description 35
- 238000005516 engineering process Methods 0.000 title abstract description 4
- 238000000034 method Methods 0.000 claims abstract description 17
- 230000003287 optical effect Effects 0.000 claims abstract description 9
- 230000008569 process Effects 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims description 16
- 229910052681 coesite Inorganic materials 0.000 claims description 9
- 229910052906 cristobalite Inorganic materials 0.000 claims description 9
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052682 stishovite Inorganic materials 0.000 claims description 9
- 229910052905 tridymite Inorganic materials 0.000 claims description 9
- 229910004205 SiNX Inorganic materials 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052594 sapphire Inorganic materials 0.000 claims description 5
- 239000010980 sapphire Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 3
- 238000002161 passivation Methods 0.000 claims description 3
- 230000003595 spectral effect Effects 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 claims description 2
- 238000001259 photo etching Methods 0.000 claims description 2
- 229910002601 GaN Inorganic materials 0.000 claims 8
- 229910017083 AlN Inorganic materials 0.000 claims 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 1
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 238000011017 operating method Methods 0.000 claims 1
- 230000010354 integration Effects 0.000 abstract 1
- 238000002834 transmittance Methods 0.000 abstract 1
- 239000000835 fiber Substances 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 238000002372 labelling Methods 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 210000000056 organ Anatomy 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000006173 Good's buffer Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
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- 238000010586 diagram Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
- H01L31/141—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the semiconductor device sensitive to radiation being without a potential-jump barrier or surface barrier
- H01L31/143—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the semiconductor device sensitive to radiation being without a potential-jump barrier or surface barrier the light source being a semiconductor device with at least one potential-jump barrier or surface barrier, e.g. light emitting diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
- H01L31/147—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
- H01L31/153—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1856—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising nitride compounds, e.g. GaN
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610059114.2A CN105679853B (zh) | 2016-01-28 | 2016-01-28 | 基于纳米线技术的新型片上集成光耦 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610059114.2A CN105679853B (zh) | 2016-01-28 | 2016-01-28 | 基于纳米线技术的新型片上集成光耦 |
Publications (2)
Publication Number | Publication Date |
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CN105679853A true CN105679853A (zh) | 2016-06-15 |
CN105679853B CN105679853B (zh) | 2017-05-10 |
Family
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Family Applications (1)
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CN201610059114.2A Active CN105679853B (zh) | 2016-01-28 | 2016-01-28 | 基于纳米线技术的新型片上集成光耦 |
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CN (1) | CN105679853B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111123759A (zh) * | 2019-11-22 | 2020-05-08 | 江苏紫翚光电科技有限公司 | 一种uvc紫外led控制的纳米线光隔离器及其制作工艺 |
CN114256217A (zh) * | 2020-09-21 | 2022-03-29 | 上海铁路通信有限公司 | 一种温控光耦 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1674216A (zh) * | 2003-12-24 | 2005-09-28 | 夏普株式会社 | 光耦合器以及使用该光耦合器的电子设备 |
US20090001498A1 (en) * | 2007-06-26 | 2009-01-01 | Shih-Yuan Wang | Nanowire photodiodes and methods of making nanowire photodiodes |
CN102659070A (zh) * | 2012-05-28 | 2012-09-12 | 西安交通大学 | 一种集成光子芯片及其制备方法 |
-
2016
- 2016-01-28 CN CN201610059114.2A patent/CN105679853B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1674216A (zh) * | 2003-12-24 | 2005-09-28 | 夏普株式会社 | 光耦合器以及使用该光耦合器的电子设备 |
US20090001498A1 (en) * | 2007-06-26 | 2009-01-01 | Shih-Yuan Wang | Nanowire photodiodes and methods of making nanowire photodiodes |
CN102659070A (zh) * | 2012-05-28 | 2012-09-12 | 西安交通大学 | 一种集成光子芯片及其制备方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111123759A (zh) * | 2019-11-22 | 2020-05-08 | 江苏紫翚光电科技有限公司 | 一种uvc紫外led控制的纳米线光隔离器及其制作工艺 |
CN114256217A (zh) * | 2020-09-21 | 2022-03-29 | 上海铁路通信有限公司 | 一种温控光耦 |
Also Published As
Publication number | Publication date |
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CN105679853B (zh) | 2017-05-10 |
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TR01 | Transfer of patent right |
Effective date of registration: 20190428 Address after: 211100 No. 1009 Tianyuan East Road, Jiangning District, Nanjing, Jiangsu. Patentee after: Nanjing Purple Light Technology Co., Ltd. Address before: 214122 1800 Lihu Avenue, Binhu District, Wuxi, Jiangsu Patentee before: Jiangnan University |
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Effective date of registration: 20211108 Address after: 230000 No. C202, Zone C, entrepreneurship incubation center, Hefei National University Science Park, high tech Zone, Hefei, Anhui Province Patentee after: Anhui owl Technology Co.,Ltd. Address before: 211100 No. 1009 Tianyuan East Road, Jiangning District, Nanjing, Jiangsu. Patentee before: NANJING ZIKE PHOTOELECTRIC TECHNOLOGY CO.,LTD. |
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