CN105679853B - 基于纳米线技术的新型片上集成光耦 - Google Patents
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- 239000002070 nanowire Substances 0.000 title claims abstract description 38
- 238000005516 engineering process Methods 0.000 title abstract description 4
- 238000000034 method Methods 0.000 claims abstract description 15
- 230000008569 process Effects 0.000 claims abstract description 3
- 239000000758 substrate Substances 0.000 claims description 14
- 229910004205 SiNX Inorganic materials 0.000 claims description 8
- 229910052681 coesite Inorganic materials 0.000 claims description 8
- 229910052906 cristobalite Inorganic materials 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052682 stishovite Inorganic materials 0.000 claims description 8
- 229910052905 tridymite Inorganic materials 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- 230000003595 spectral effect Effects 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- 238000002161 passivation Methods 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 claims description 2
- 229910002601 GaN Inorganic materials 0.000 claims 8
- 239000000203 mixture Substances 0.000 claims 4
- 229910017083 AlN Inorganic materials 0.000 claims 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 1
- 240000007594 Oryza sativa Species 0.000 claims 1
- 235000007164 Oryza sativa Nutrition 0.000 claims 1
- 235000012149 noodles Nutrition 0.000 claims 1
- 238000011017 operating method Methods 0.000 claims 1
- 235000009566 rice Nutrition 0.000 claims 1
- 230000003287 optical effect Effects 0.000 abstract description 6
- 230000010354 integration Effects 0.000 abstract 1
- 238000002834 transmittance Methods 0.000 abstract 1
- 239000000835 fiber Substances 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000006173 Good's buffer Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000012576 optical tweezer Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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Abstract
本发明涉及一种基于纳米线技术的新型片上集成光耦，可以实现光耦在片上系统的集成。本发明主要结构分为发光部分、光波导部分和光敏部分，其特点是发光部分和光敏部分采用纳米线结构的LED和光敏二极管。发光部分的纳米线结构LED在外加电压下可以发光，光敏部分的纳米线结构光敏二极管可以探测到发光部分LED发光的有无，并转化为电流信号，光波导部分对发光部分LED发出的光具有较高透过率。该新型光耦可以通过微纳工艺制备，尺寸不大于100μm，使其具有可集成到片上系统的特点。
Description
技术领域：
本发明属于微电子集成电路设计领域，具体涉及一种基于纳米线技术的片上可集成新型光耦。
背景技术：
片上系统指的是在单个芯片上集成一个完整的系统，对所有或部分必要的电子电路进行包分组的技术。所谓完整的系统一般包括中央处理器(CPU)、存储器、以及外围电路等。由于空前的高效集成性能，片上系统是替代集成电路的主要解决方案。片上系统已经成为当前微电子芯片发展的必然趋势。
光耦合器简称光耦。它是以光为媒介来传输电信号的器件，通常把发光器(发光二极管LED)与受光器(光敏半导体管)封装在同一管壳内。当输入端加电信号时发光器发出光线，受光器接受光线之后就产生光电流，从输出端流出，从而实现了“电—光—电”转换。光耦合器以光为媒介传输电信号，对输入、输出电信号有良好的隔离作用，在各种电路中得到广泛的应用。光耦是目前种类最多、用途最广的光电器件之一。
目前的片上系统设计中在需要对输入、输出电信号隔离时，仍然是通过外部光耦等独立器件实现的，不仅占用了集成芯片的引脚资源，对整体设计的集成化、小型化也十分不利。
利用纳米线技术，在硅片上实现光耦功能的同时，将光耦的尺寸缩小到微米级。具有这样结构的光耦可以被集成到片上系统中，在需要对输入、输出信号隔离的应用中，这种新型光耦可以极大简化外围电路，使系统集成度更高，更加小型化。
发明内容：
本发明要解决的技术问题是在硅片上制作微型光耦，要求该光耦尺寸不大于100μm，最主要的具有发光部分、光波导部分和光敏部分。发光部分在有适当外加电压时发光，否则不发光。发光部分发出的光可以很好的透过光波导部分。光敏部分可以探测由发光部分发出并通过光波导的光的有无。
为解决在同一硅片上制作微型光耦的尺寸要求，本发明通过制作纳米线发光二极管结构和纳米线光敏二极管结构，并通过SiN光波导将它们相连，可以使该光耦的最大尺寸不大于100微米。
为解决发光部分反映外加电压有无的问题，本发明发光部分是一个纳米线LED或多个纳米线LED并联，其是否发光完全依赖外加电压的有无。
为解决LED发出的光能够很好的被探测器接受，光波导部分采用SiNx或SiO2材料，使得LED发出的光能够很好的透过光波导。
为解决光敏部分可以探测光的有无的问题，本发明的光敏部分是具有一个或多个并联光敏二极管结构的纳米线，且置于波导之中，可以有效地降低外界环境对器件性能的影响。
LED发光时，以SiNx或SiO2材料作为光波导将纳米线LED和纳米线光敏二极管相连，可以使LED发出的光很好的透过光波导部分并被光敏二极管探测到。根据光敏二极管的响应光谱范围，适当调整LED发光的中心波长使得两者光谱匹配，提高光耦响应灵敏度。
附图说明
图1为常规制备GaN基纳米线LED的结构示意图；
图2为GaN基纳米线光敏二极管的结构示意图；
图3为基于纳米线技术的新型片上集成光耦示意图。
图中：1-蓝宝石衬底，2-AlN层，3-SiNx掩膜层，4-n-GaN层，5-量子阱层，6-p-GaN层，7-InGaN势阱层，8-硅衬底，9-SiO2层，10-n电极，11-p电极，12-SiNx，13-SiO2层，14-GaN基纳米线LED，15-GaN基纳米线光敏二极管。
具体实施方式
以下结合附图和具体实施例对本发明提出的基于纳米线技术的新型片上集成光耦及其制作方法作进一步详细说明。根据下面说明和权利要求书,本发明的优点和特征将更清楚。需说明的是,附图均采用非常简化的形式且均使用非精准的比例,仅用以方便、明晰地辅助说明本发明实施例的目的。
图1为常规制备GaN基纳米线LED的结构示意图，所述结构包括衬底，优选的，蓝宝石衬底1，AlN层2，SiNx掩膜层3，n-GaN层4，量子阱层5，p-GaN层6，标记GaN基纳米线LED为15，其发光光谱范围在400到800nm之间。
图2为GaN基纳米线光敏二极管的结构示意图，所述结构包括衬底，优选的，蓝宝石衬底1，AlN层2，SiNx掩膜层3，n-GaN层4，InGaN势阱层7，p-GaN层6，标记GaN基纳米线光敏二极管为16，其光谱响应范围在400到800nm之间。
制备集成光耦的步骤包括以下:
1、具体的,如图3所示,提供衬底8,优选的,所述衬底8为硅衬底。
2、在硅衬底制备一层厚约200～300nm SiO2层9。
3、在无水乙醇溶液中，通过超声处理将GaN基纳米线LED和探测器分别从蓝宝石衬底上剥离出来，使用光镊或其它方法将纳米线移至SiO2层9上，并用光学显微镜对这两种纳米线结构经行标记和分离。
4、使用hydrogen sylesquioxane对纳米线进行封装，然后热退火使之固定，使用稀释的氢氟酸对多余的hydrogen sylesquioxane进行清洗，使得纳米线裸露出来但不脱离SiO2层9。
5、使用刻蚀工艺对GaN基纳米线LED和光敏二极管进行光刻工艺，使得n-GaN层暴露出来。
6、分别在暴露的n-GaN层和p-GaN层上制作n型电极10和p型电极11。
7、在上述衬底上使用PECVD等方法制备一层厚约500～600nm光波导层12，优选的，所述光波导层12为SiNx薄膜。
8、最后再制备一层厚约100～200nm钝化层13，优选的，所述钝化层13为SiO2层。
Claims (5)
1.一种基于纳米线技术的新型片上集成光耦，其特征在于：由一个纳米线LED或多个纳米线LED组成的发光部分和一个或多个纳米线结构的光敏二极管组成的光敏部分以及光波导部分组成；其最大尺寸不大于100μm。
2.根据权利要求1所述的基于纳米线技术的新型片上集成光耦，其特征在于：所述光耦的衬底选自蓝宝石、硅、氮化镓、砷化镓、氮化铝和尖晶石中的一种。
3.根据权利要求1所述的基于纳米线技术的新型片上集成光耦，其特征在于：所述光波导部分的材料采用SiNx或SiO2中的一种。
4.根据权利要求1所述的基于纳米线技术的新型片上集成光耦，其特征在于：所述光耦的发光LED波长和光敏二极管的光谱波段范围区间为400nm～800nm。
5.一种如权利要求1-4所述的基于纳米线技术的新型片上集成光耦的制作方法，其特征在于，其操作步骤包括：
a)、在衬底上依次制作AlN层，SiNx掩膜层，n-GaN层，量子阱层和p-GaN层组成纳米线结构LED；
b)、在衬底上依次制作AlN层，SiNx掩膜层，n-GaN层，InGaN势阱层和p-GaN层组成纳米线结构光敏二极管；
c)、在衬底上制备一层厚度介于200-300nm的SiO2层；
d)、将上述步骤a)和b)得到的纳米线结构LED和光敏二极管移至上述步骤c)得到的SiO2层上；
e)、分别对所述的纳米线结构LED和光敏二极管进行光刻工艺，使得n-GaN层暴露出来；
f)、分别在所述的n-GaN层和p-GaN层上制作n型电极和p型电极；
g)、在所述SiO2层上制备光波导层，该光波导层作为LED光传输至光敏二极管的通道，所述光波导层位于LED与光敏二极管之间；
h)、在所述光波导层上制备钝化层。
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