CN105671510A - 一种液相基底沉积金属薄膜分离装置 - Google Patents
一种液相基底沉积金属薄膜分离装置 Download PDFInfo
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- 239000002184 metal Substances 0.000 title claims abstract description 28
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- 239000000758 substrate Substances 0.000 title abstract description 8
- 238000000926 separation method Methods 0.000 title abstract description 5
- 239000007791 liquid phase Substances 0.000 title abstract 4
- 238000000151 deposition Methods 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 13
- 238000005192 partition Methods 0.000 claims abstract description 13
- 229940008099 dimethicone Drugs 0.000 claims description 17
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 17
- 235000013870 dimethyl polysiloxane Nutrition 0.000 claims description 17
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 17
- 239000007788 liquid Substances 0.000 claims description 16
- 239000011159 matrix material Substances 0.000 claims description 14
- 238000005204 segregation Methods 0.000 claims description 12
- 239000003960 organic solvent Substances 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 2
- 238000010422 painting Methods 0.000 claims description 2
- 238000001755 magnetron sputter deposition Methods 0.000 abstract description 10
- 238000005516 engineering process Methods 0.000 abstract description 3
- 229920002545 silicone oil Polymers 0.000 abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 2
- 239000003921 oil Substances 0.000 abstract description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- 239000010703 silicon Substances 0.000 abstract description 2
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 abstract 2
- 239000010408 film Substances 0.000 description 28
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 8
- 239000012528 membrane Substances 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000007605 air drying Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- JZZIHCLFHIXETF-UHFFFAOYSA-N dimethylsilicon Chemical compound C[Si]C JZZIHCLFHIXETF-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000006115 industrial coating Substances 0.000 description 1
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- 238000005498 polishing Methods 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0005—Separation of the coating from the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/001—Coating on a liquid substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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Abstract
本发明属于磁控溅射技术,具体涉及一种液相基底沉积金属薄膜分离装置,其特征在于:顶盖方便打开和密封开口,底座密封圆桶底部,带孔隔板固定在圆桶中间位置,带孔隔板中间涂二甲基硅油薄层,金属薄膜沉积在涂二甲基硅油薄层上方。本发明有益效果:通过本装置,磁控溅射后形成的金属膜可以在真空环境下获得,不会氧化;恒温的环境减少硅油内应力对金属薄膜的作用,不会出现金属薄膜褶皱。
Description
技术领域
本发明属于磁控溅射技术,具体涉及一种液相基底沉积金属薄膜分离装置。
背景技术
磁控溅射沉积是利用足够高能量的粒子轰击靶材表面,使靶材中的原子获得做够高的能量,在表面发出的高能粒子在磁场的作用下运动,最终沉积在基体表面,形成金属薄膜。磁控溅射已经成为一种成熟的工业镀膜技术,由于其突出的有点,广泛应用于金属表面改性领域。
金属薄膜使用广泛,常见的分离方法如,中国发明专利公开号CN1730716A详细记录了液相基底表面新型金属薄膜的制备技术,但是金属薄膜是在空气中长时间剥离出来的,造成金属薄膜的氧化和褶皱,直接影响了金属薄膜的使用。通过显微镜观察金属薄膜表面可以发现大量褶皱,如图1所示。
发明内容:
本发明为了解决上述技术问题,提出了一种液相基底沉积金属薄膜分离装置。
一种液相基底沉积金属薄膜分离装置,其特征在于:顶盖方便打开和密封开口,底座密封圆桶底部,带孔隔板固定在圆桶中间位置,带孔隔板中间涂二甲基硅油薄层,金属薄膜沉积在涂二甲基硅油薄层上方,有机溶剂存放于底座和圆桶形成的存储空间,有机溶剂液面低于带孔隔板位置。
所述顶盖和底座带恒温加热装置。
所述带孔隔板开孔位置在边缘,中心位置不开孔。
所述二甲基硅油薄层沉积和剥离过程在真空室中,操作通过机械手完成。
本装置可以倒转,顶盖可以作为底座使用。
磁控溅射系统如图2所示,这是获得金属薄膜的有效方法,把液相基底沉积金属薄膜分离装置放置在沉积台上,通过磁控溅射,在二甲基硅油表面沉积金属薄膜,然后通过有机溶剂吸收二甲基硅油,从而获得金属薄膜。
金属褶皱是在二甲基硅油内用力的作用下形成的,当二甲基硅油温度发生变化时,内应力作用于金属薄膜,这种效果是需要几小时甚至几天的时间累积的。因此,要得到表面光滑的技术薄膜要做到:(1)薄膜剥离时间短;(2)沉积过程到剥离过程恒温;(3)在真空环境下获得。
本发明有益效果:通过本装置,(1)磁控溅射后形成的金属膜可以在真空环境下获得,不会氧化;(2)恒温的环境减少硅油内应力对金属薄膜的作用,不会出现金属薄膜褶皱;(3)抽真空系统的充气与金属薄膜分离可以同时进行,缩短了操作时间,降低了薄膜褶皱形成几率。
附图说明
图1为金属褶皱图;
图2磁控溅射系统示意图;
图3顶盖密封装置图;
图4顶盖开启装置图;
具体实施方式
通过机械手在真空室内完成对氮化钛薄膜剥离的过程,这种过程满足了以下条件:(1)薄膜剥离时间短;(2)沉积过程到剥离过程恒温;(3)在真空环境下获得。剥离过程分为:
实施例1:
1)将沉积好的氮化钛薄膜样品在真空室内放入丙酮溶液中;
2)基底、二甲基硅油、氮化钛薄膜及丙酮溶液保持恒定温度;
3)二甲基硅油被溶解后,氮化钛薄膜脱落在恒温丙酮溶液中;
4)迅速关闭抽真空系统,取出氮化钛薄膜及恒温丙酮溶液,将氮化钛薄晾干保存。
剥离氮化钛薄膜在短时间内进行,最好小于2小时,防止褶皱的出现。
具体实施方式,如图2所示,真空系统抽真空,液相基底沉积金属薄膜分离装置平放于沉积台上,装置距离磁控溅射靶10-15cm,开始沉积金属薄膜。液相基底沉积金属薄膜分离装置,顶盖1开启,如图4所示,顶盖1方便打开和密封开口,底座7密封圆桶5底部,带孔隔板4固定在圆桶5中间位置,带孔隔板4中间涂二甲基硅油3薄层,金属薄膜2沉积在涂二甲基硅油3薄层上方。有机溶剂6存放于底座7和圆桶5形成的存储空间,有机溶剂6液面低于带孔隔板4位置。
在真空环境下,机械手将顶盖1密封,如图3所示,装置倒转,有机溶剂6浸入金属薄膜2和二甲基硅油3,二甲基硅油3因此被除去。
实施例2:
1)选用合适尺寸的硅片或玻璃作为沉积基底,用有机溶剂超生清洗基底表面,清洗完毕,冷风干燥备用;
2)靶材选用钛靶,砂纸打磨抛光靶材表面,安装在磁控溅射靶位;
3)二甲基硅油均匀涂覆在基底表面,涂覆好样品放入溅射位置,调节磁控溅射靶位高度。
4)真空室抽真空,磁控溅射过程,采用本底真空1.0-5.0×10-4Pa,充入氮气作为反应气体,氮气流量控制在30-105sccm,工作真空1.0-8.0×10-1Pa,预溅5分钟,磁控溅射源功率调节范围100-120W,负偏压0V,溅射10-15分钟;
5)将溅射氮化钛薄膜在真空室恒温条件下快速剥离;
6)关闭系统,关闸板阀,关闭分子泵,分子泵停止工作后关闭电磁阀,关机械泵,取样品;
7)调节显微镜,观察二甲基硅油表面沉积氮化钛薄膜表面形貌。
Claims (5)
1.一种液相基底沉积金属薄膜分离装置,其特征在于:顶盖(1)方便打开和密封开口,底座(7)密封圆桶(5)底部,带孔隔板(4)固定在圆桶(5)中间位置,带孔隔板(4)中间涂二甲基硅油(3)薄层,金属薄膜(2)沉积在涂二甲基硅油(3)薄层上方,有机溶剂(6)存放于底座(7)和圆桶(5)形成的存储空间,有机溶剂(6)液面低于带孔隔板(4)位置。
2.根据权利要求1所述一种液相基底沉积金属薄膜分离装置,其特征在于:顶盖(1)和底座(7)带恒温加热装置。
3.根据权利要求1所述一种液相基底沉积金属薄膜分离装置,其特征在于:带孔隔板(4)开孔位置在边缘,中心位置不开孔。
4.根据权利要求1所述一种液相基底沉积金属薄膜分离装置,其特征在于:二甲基硅油(3)薄层沉积和剥离过程在真空室中,操作通过机械手完成。
5.根据权利要求1所述一种液相基底沉积金属薄膜分离装置,其特征在于:本装置可以倒转,顶盖(1)可以作为底座(7)使用。
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN107815662A (zh) * | 2017-12-08 | 2018-03-20 | 苏州矩阵光电有限公司 | 一种薄膜转移装置及其使用方法 |
CN109055894A (zh) * | 2018-09-12 | 2018-12-21 | 杭州联芳科技有限公司 | 一种二甲基硅油表面磁控溅射沉积氮化钛的方法 |
CN110562968A (zh) * | 2019-10-22 | 2019-12-13 | 杭州联芳科技有限公司 | 一种液相基底沉石墨烯分离方法 |
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CN1730716A (zh) * | 2005-08-23 | 2006-02-08 | 浙江大学 | 液相基底表面新型金属薄膜的制备技术 |
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CN107815662A (zh) * | 2017-12-08 | 2018-03-20 | 苏州矩阵光电有限公司 | 一种薄膜转移装置及其使用方法 |
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CN110562968A (zh) * | 2019-10-22 | 2019-12-13 | 杭州联芳科技有限公司 | 一种液相基底沉石墨烯分离方法 |
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