CN105655870B - It is a kind of based on prism beam-expanded tunable grating external-cavity semiconductor laser - Google Patents
It is a kind of based on prism beam-expanded tunable grating external-cavity semiconductor laser Download PDFInfo
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- CN105655870B CN105655870B CN201510922069.4A CN201510922069A CN105655870B CN 105655870 B CN105655870 B CN 105655870B CN 201510922069 A CN201510922069 A CN 201510922069A CN 105655870 B CN105655870 B CN 105655870B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
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- General Physics & Mathematics (AREA)
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- Optics & Photonics (AREA)
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Abstract
The present invention provides a kind of based on prism beam-expanded tunable grating external-cavity semiconductor laser.Technical solution is: including laser diode, collimation lens, grating, it is characterized in that, further including the prism beam-expanded system of one or more prisms composition, so that the laser that laser diode issues is after collimation lens, before by grating, dispersion amplification is carried out by prism beam-expanded system.The incident light angle of each prism is the corresponding Brewster's angle of laser diode wave length.The even outgoing seamed edge perpendicular to the prism of the emergent light of each prism.Present invention adds after prism beam-expanded system, narrow laser linewidth further.
Description
Technical field
The present invention relates to semiconductor laser technologies, especially a kind of partly to be led based on prism beam-expanded tunable grating external-cavity
Body laser.
Background technique
Semiconductor laser has been widely used for being permitted due to having many advantages, such as that electric light is directly converted, small in size, the service life is long
It is multi-field, however its line width is usually bigger.In view of the line width and phase noise of laser are proportional, in order to guarantee it
The performance of related system, narrow line width regulatable laser become indispensable.For semiconductor laser, stimulated radiation is accounted for
According to ascendancy, but it is inevitably present spontaneous radiation, this will cause frequency noise, broaden laser frequency spectrum.Narrow line
Wide tunable laser device is the key that photon count statistic opto-electronic device in dense wavelength division multiplexing system of new generation and all-optical network,
The continuous or quasi-continuous tuning of wide wave-length coverage is had been realized at present, and there are corresponding launch products.
Tunable External Cavity Semiconductor Laser has line width, and tuning range is big, and output power is high, preferable single longitudinal mode is special
The advantages that property and stability.In order to make semiconductor laser export stable frequency, first have to guarantee that semiconductor laser is defeated
Laser out is single longitudinal mode.In order to enable semiconductor laser to export single longitudinal mode it is necessary to inhibiting other moulds in gain bandwidth
Formula, and one of mode is only allowed to be strengthened.So-called exocoel is for inner cavity, and inner cavity refers to semiconductor
The resonant cavity that laser diode front/rear end is constituted, exocoel are extended to resonant cavity outside semiconductor laser diode, are used
Bulk of optical feedback original part realizes external feedback to form light generation, and grating is exactly to realize that a kind of light of external feedback feeds back original part.
Since external cavity length is much larger than inner cavity, the frequency interval between the different zlasing modes vibrated in exocoel will be much smaller than inner cavity,
Once realizing single-mode output, line width of semiconductor laser is also just greatly narrowed.Have usually using outer-cavity structure
Littrow and two kinds of Littman, adjust their feedback original part, to change, outer cavity is long, make some oscillation in exocoel
Mode, which is selected, to be come, and realizes single-mode output.
By laser diode, (smooth surface is coated with anti-reflection film to Littrow structure external cavity semiconductor laser, another side is coated with for output
High-reflecting film), collimation lens, three, grating part constitute, as shown in Figure 1.Laser diode emergent light after collimation lens with
Certain angle is incident on grating, selects incident angle appropriate, and the output light of grating is made there was only 0 grade and+1 grade of light, wherein 0 grade
Light feeds back to laser diode as laser emitting light ,+1 grade of light, constitutes the outer cavity oscillations of semiconductor laser.
Littman structure external cavity semiconductor laser is by laser diode, collimation lens, grating, four part structure of reflecting mirror
At as shown in Figure 2.In this configuration, the collimated lens of laser diode emergent light are incident on grating with a preferable angle,
Likewise, 0 grade of light is as laser emitting light, after+1 grade of light is reflected by a reflector as feedback light, using a grating edge
Backtracking constitutes the outer cavity oscillations of semiconductor laser.
Summary of the invention
A kind of based on prism beam-expanded tunable grating external-cavity semiconductor laser it is an object of the invention to disclose, this swashs
Light device have it is compact-sized, adjustment is simple, the small high gain of cavity loss, can obtain narrow linewidth, higher output energy simultaneously
Index and the continuously adjustable for realizing wide wave-length coverage.
In order to solve the above-mentioned technical problem, realize above-mentioned technical effect, the technical solution adopted by the present invention first is that:
It is a kind of saturating based on prism beam-expanded tunable grating external-cavity semiconductor laser, including laser diode 11, collimation
Mirror 12, grating 14, which is characterized in that further include the prism beam-expanded system of two or more than two compositions of prism 13, so that swashing
The laser that optical diode 11 issues is after collimation lens 12, before by grating 14, carries out dispersion by prism beam-expanded system
Amplification.The incident light angle of each prism 13 is the corresponding Brewster's angle of 11 wavelength of laser diode.Each prism
The even outgoing seamed edge perpendicular to the prism 13 of 13 emergent light.
The technical solution adopted by the present invention second is that: it is a kind of based on prism beam-expanded tunable grating external-cavity semiconductor laser
Device, including laser diode 21, collimation lens 22, grating 24, reflecting mirror 25, which is characterized in that further include several prisms
The prism beam-expanded system of 23 compositions, so that the laser that laser diode 21 issues after collimation lens 22, is passing through grating 24
Before, dispersion amplification is carried out by prism beam-expanded system.The incident light angle of each prism 23 is 21 wavelength of laser diode
Corresponding Brewster's angle.The even outgoing seamed edge perpendicular to the prism 13 of the emergent light of each prism 23.Prism beam-expanded system
Emergent light unite as the incident light of grating 24, after reflecting mirror 25 is reflected back grating 24, Yan Yuanlu is returned 1 grade of diffraction light of grating 24
Return laser diode 21, output of the 0 grade of light of grating 24 as tunable grating external-cavity semiconductor laser.
The beneficial effects of the present invention are: based on prism beam-expanded tunable grating external-cavity semiconductor laser, common outer
On the basis of cavate semiconductor, prism beam-expanded system joined in the optical path of external cavity feedback, laser passes through prism beam-expanded system
Afterwards, since the expansion of light beam increases the resolution ratio of grating, while the dispersion characteristics of prism itself make in laser external cavity
The further dispersion of oscillation light separates, so that laser linewidth be made further to narrow.
Detailed description of the invention
Fig. 1 is the schematic illustration of existing Littrow type grating external cavity semiconductor laser line；
Fig. 2 is the schematic illustration of existing Littman type grating external cavity semiconductor laser line；
Fig. 3 is specific embodiment one provided by the invention；
Fig. 4 is specific embodiment two provided by the invention；
Fig. 5 is a certain specific embodiment of prism beam-expanded system provided by the invention；
Fig. 6 is the expanded light beam schematic illustration of prism beam-expanded system of the present invention；
Fig. 7 is the specific embodiment of the invention one (i.e. Fig. 3) wire width measuring comparison diagram；
Fig. 8 is two wire width measuring comparison diagram of the specific embodiment of the invention.
Specific embodiment
With reference to the accompanying drawings and examples, the present invention will be described in detail.
Fig. 3 is specific embodiment one provided by the invention.As shown in figure 3, including laser diode 11, collimation lens
12, prism beam-expanded system, grating 14.Wherein, laser diode 11 is for exporting laser beam, conduction band under the action of electric current
In electronics and valence band in hole-recombination generate stimulated radiation, (formed between two end faces of laser diode humorous in inner cavity
Shake chamber) in resonance generate laser；Collimation lens 12 has very short focus, and the light beam for exporting to laser diode 11 is whole
Shape forms collimated light beam；Prism beam-expanded system is made of several prisms 13, is exported in parallel for changing collimation lens 12
Beam and focus size, while system dispersion performance is improved, it include two prisms 13 in present embodiment；Grating 14 is used
In the further dispersion of collimated light beam exported to prism beam-expanded system, while constituting laser external cavity (the laser diode outgoing
The resonant cavity formed between end face and grating) a resonance face, the collimated light beam of prism beam-expanded system output gets to grating 14
On, 1 grade of diffraction light original road returns to laser diode 11, in 14 He of grating after prism beam-expanded system and collimation lens 12
11 output end face of laser diode is the intracavitary oscillation amplification of external resonant of hysteroscope；And 0 grade of light of grating 14 is as embodiment
One output.
Fig. 4 is specific embodiment two provided by the invention.As shown in figure 4, including laser diode 21, collimation lens
22, prism beam-expanded system, grating 24 and reflecting mirror 25.Wherein, laser diode 21, collimation lens 22, prism beam-expanded system
It acts on identical as positional relationship and specific embodiment one；The difference is that 1 grade of diffraction light of 24 incident light of grating, incident
Onto reflecting mirror 25, through reflecting mirror 25 reflection after again light echo grid 24, through grating 24 again diffraction 1 road Ji Guangyuan by prism expansion
After beam system and collimation lens 22, laser diode 21 is returned to, is hysteroscope in reflecting mirror 25 and 21 output end face of laser diode
Resonant cavity in oscillation amplification；Output of the 0 grade of light of grating 24 as embodiment two.
Fig. 5 is a certain specific embodiment of prism beam-expanded system provided by the invention.As shown in figure 5, prism beam-expanded system
System is made of four prisms, and the prism material of the prism beam-expanded system is fused silica or calcirm-fluoride, each prism
Incident angle is the Brewster's angle of required wavelength laser, and emergent light is perpendicular to the other one side of prism.
Fig. 6 is that prism beam-expanded system of the present invention expands big schematic illustration.As shown in fig. 6, the prism beam-expanded system
System includes a prism 13, i1,i2Respectively (i.e. 11 wavelength of laser diode is corresponding for incidence angle of the light beam to prism 13
Brewster's angle) and refraction angle, wa,wbCross sectional dimensions respectively before and after beam expander, then prism beam-expanded system expands coefficient
M is also that prism 13 expands coefficient simultaneously, are as follows:
Further genralrlization expands coefficient to the prism beam-expanded system being made of n prism 13 are as follows:
Wherein, M1,M2,···,MnRespectively prism 1,2 .., n's expands coefficient.
Referring to US20020186741A1, it is known that by exporting laser in the Optical Maser System of multiple prisms and grating combination
Line width halfwidth degree Δ λFWHMIt can be determined by following formula:
Wherein: θdivFor the angle of divergence of laser diode light beam horizontal direction, M expands multiple, α for prism beam-expanded systemB
For the angle of laser light incident to grating.NRThe round-trip number for being laser in resonant cavity, λ is optical maser wavelength.Pass through above-mentioned formula
It is found that increase prism beam-expanded system expands coefficient M, it can the line width for reducing output laser realizes the line width pressure of laser
It is narrow.
Fig. 7 is line width comparison diagram of the specific embodiment of the invention one using delay self-heterodyne method measurement.The specific implementation
In mode, collimation lens 12 exports the collimated light beam that diameter is 3.8mm；Prism beam-expanded system is made of two prisms 13, and three
The incidence angle of prism 13 is 56.5 °, and expanding multiple is 1.59, and the multiple that expands of prism beam-expanded system is 2.53；Cavity length of the resonator chamber
For 83.2mm；Time delay optical fiber length in the self-heterodyne method that is delayed measurement is 13.6Km.In Fig. 7, abscissa is frequency interval, is indulged
Coordinate is signal strength, and dotted line indicates the line width data of the specific embodiment of the invention one, and solid line indicates original semiconductor laser
The line width data of device.The 3dB attenuation bandwidth of data reflects the true line width of laser, the 3dB of the specific embodiment of the invention one
Attenuation bandwidth is 19.4KHz, and original semiconductor laser 3dB attenuation bandwidth is 44.3KHz.Therefore the specific embodiment of the invention one
Wire width measuring value is 19.4KHz/2=9.7KHz, while available line width has been narrowed 44.3KHz/19.4KHz=2.28
Times.
Fig. 8 is line width comparison diagram of the specific embodiment of the invention two using delay self-heterodyne method measurement.The specific implementation
In mode two, the incidence angle of grating is 79 °, and other parameters and specific embodiment one are almost the same.In Fig. 7, abscissa is frequency
Rate interval, ordinate are signal strength, and dotted line is two line width data of the specific embodiment of the invention, and solid line swashs for original semiconductor
The line width data of light device.The 3dB attenuation bandwidth of the specific embodiment of the invention two is 1.9KHz, original semiconductor laser 3dB
Attenuation bandwidth is 4.2KHz.Therefore two line width measured value of the specific embodiment of the invention is 1.9KHz/2=9.7KHz, while can be with
It obtains line width and has been narrowed 4.2KHz/1.9KHz=2.21 times.It can be seen that the specific embodiment of the invention two compares embodiment
One line width has narrowed an order of magnitude again, this is because linewidth narrowing caused by the diffraction twice of grating.
Although the present invention is described in detail referring to above-mentioned specific embodiment, it should be appreciated that the present invention is not limited to
Disclosed embodiment can carry out various changes to its form and details for the technical staff of this professional domain.With
Upper described is only specific embodiments of the present invention, is not intended to restrict the invention, it is all the spirit and principles in the present invention it
Any modification, equivalent substitution, improvement and etc. that are interior, being done, should all be included in the protection scope of the present invention.
Claims (1)
1. a kind of saturating based on prism beam-expanded tunable grating external-cavity semiconductor laser, including laser diode (21), collimation
Mirror (22), grating (24), reflecting mirror (25), which is characterized in that further include the prism beam-expanded system of several prisms (23) composition
System；Laser diode (21) issue laser after collimation lens (22), by grating (24) before, by prism beam-expanded system
Dispersion amplification；The incident light angle of each prism (23) is the corresponding Brewster's angle of laser diode (21) wavelength；Often
The emergent light of a prism (23) is each perpendicular to the outgoing seamed edge of the prism (13)；The emergent light of prism beam-expanded system is grating
(24) incident light, 1 grade of diffraction light of grating (24) is after reflecting mirror (25) is reflected back grating (24), along backtracking laser
Diode (21), output of the 0 grade of light of grating (24) as tunable grating external-cavity semiconductor laser.
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| CN107240856B (en) * | 2017-07-05 | 2019-05-17 | 中国科学院上海光学精密机械研究所 | The spectrum beam combination device of diffraction twice is realized using the transmission grating of plating reflectance coating |
| CN111299819B (en) * | 2020-03-12 | 2022-12-16 | 中国航空制造技术研究院 | Method for deflecting laser by refraction type laser processing head |
| CN111404015A (en) * | 2020-03-26 | 2020-07-10 | 富通尼激光科技（东莞）有限公司 | High repetition frequency laser |
| CN112271550A (en) * | 2020-10-20 | 2021-01-26 | 北京凯普林光电科技股份有限公司 | Wavelength-locked semiconductor laser |
| CN112751260B (en) * | 2021-01-05 | 2022-03-11 | 中国人民解放军国防科技大学 | Piezoelectric synchronous tuning ECDL laser based on fan-shaped ring structure |
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| US5177750A (en) * | 1991-07-30 | 1993-01-05 | Hewlett-Packard Company | Misalignment-tolerant, grating-tuned external-cavity laser with enhanced longitudinal mode selectivity |
| JP4947367B2 (en) * | 2007-07-18 | 2012-06-06 | 横河電機株式会社 | External resonator type tunable light source |
| CN103036143B (en) * | 2012-12-18 | 2015-04-01 | 中国科学院光电研究院 | Method and device for laser coherence length continuous adjustment |
| CN203117537U (en) * | 2012-12-19 | 2013-08-07 | 中国科学院光电研究院 | Laser-linewidth-reducing and beam-expanding device based on isosceles right triangular prisms |
| CN203193117U (en) * | 2012-12-19 | 2013-09-11 | 中国科学院光电研究院 | A laser coherence length continuously-adjusting device |
| CN203180306U (en) * | 2012-12-20 | 2013-09-04 | 中国科学院光电研究院 | Composite cavity for improving output energy of excimer laser |
| CN105048262B (en) * | 2015-08-03 | 2018-10-19 | 中国科学院光电研究院 | A kind of narrow linewidth excimer laser for improving resonant cavity |
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