CN105655230A - Machine maintenance method - Google Patents
Machine maintenance method Download PDFInfo
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- CN105655230A CN105655230A CN201410628282.XA CN201410628282A CN105655230A CN 105655230 A CN105655230 A CN 105655230A CN 201410628282 A CN201410628282 A CN 201410628282A CN 105655230 A CN105655230 A CN 105655230A
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- chamber
- machine platform
- room
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- polycrystalline silicon
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Abstract
A machine maintenance method comprises the following steps: S11, etching the chamber of a machine with etching gas, and cooling the chamber of the machine with the etching gas; and S12, opening the chamber of the machine for maintenance. According to the machine maintenance method of the invention, the chamber is chemically cleaned with etching gas and oxygen and physically cleaned with air, and therefore, residual foreign matters in the chamber can be removed, and the cooling speed of the chamber can be increased. As the chamber is cleaned before the chamber is opened for maintenance, the time for opening the chamber for cleaning and maintaining is reduced, the recovery time of equipment is shortened, and the on-stream time of machines is increased. In addition, as the chamber is cleaned before the chamber is opened, pollution to the dust-free chamber when the chamber is opened can be reduced, and the electrical performance and yield of products can be maintained.
Description
Technical field
The application relates to a kind of machine platform maintaining method, particularly relates to the machine platform maintaining method in a kind of low temperature polycrystalline silicon technique.
Background technology
Low temperature polycrystalline silicon (LTPS) technique is more than non-crystalline silicon (a-Si) complex process. The carrier transport factor (mobility) of LTPS thin film transistor (TFT) exceeds 100 times of (> 100cm than a-SiTFT2/ V.s), and LTPSTFT directly carries out complementary metal oxide semiconductor (CMOS) technique on substrate, so the source of pollution management and control in LTPS technique requires very strict.
Owing to LTPS technique is easily by impact that is organic and inorganic foreign matter, cause device failure, therefore in process of production, it is necessary to for polluting the method carrying out preventing.
Specifically; due in the normal productive process of dry etching (DryEtch) technique and chemical vapour deposition (CVD) technique; can the reactants such as such as boron (B), phosphorus (P), sulphur (S), chlorine (Cl), carbon (C), fluorine (F), organic light resistance be remained in room, machine platform chamber; in room, chamber, the reactant of residual can become the source of pollution of machine platform; therefore; machine platform being shut down after producing for some time, clean to carry out and maintain.
Fig. 1 illustrates the schema of machine platform maintaining method in low temperature polycrystalline silicon technique in a kind of prior art. As shown in fig. 1, in the prior art in low temperature polycrystalline silicon technique machine platform maintaining method flow process in, first perform step S1, after stopping work and shutting down, allow room, machine platform chamber Temperature fall, it usually needs approximately 16-18 hour. By the time the decrease in temperature of room, machine platform chamber is after envrionment temperature, performs step S2, opens room, machine platform chamber and carry out cleaning and maintaining.
But, in the prior art in low temperature polycrystalline silicon technique in machine platform maintaining method, not only stoppage time is very long, and when opening room, machine platform chamber and carry out cleaning, in room, machine platform chamber, dust free chamber can be caused environmental pollution by the above-mentioned pollutent of residual so that the electrical and good rate at LTPS device produces very big injury.
Summary of the invention
In order to one of solve the problems of the technologies described above, the application provides a kind of machine platform maintaining method, comprising: S11, with etching gas, the room, chamber of described machine platform is carried out etch processes, and utilizes described etching gas that the room, chamber of described machine platform is lowered the temperature simultaneously;And S12, the room, chamber opening described machine platform is maintained.
The method of the application also comprises: S13, between step S11 and S12, with oxygen (O2) room, chamber of described machine platform is carried out ashing treatment, and utilize described O simultaneously2The room, chamber of described machine platform is lowered the temperature further.
The method of the application also comprises: S14, after described step S13 and before S12, with air, the room, chamber of described machine platform is blown process, and finally makes the decrease in temperature of the room, chamber of described machine platform to envrionment temperature.
Wherein, described machine platform is machine platform for dry etching process in low temperature polycrystalline silicon technique, and described etching gas is sulfur hexafluoride gas (SF6) and O2Mixture.
Wherein, described machine platform is machine platform for dry etching process in low temperature polycrystalline silicon technique, and described etching gas is carbon tetrafluoride gas (CF4) and O2Mixture.
Wherein, described machine platform is machine platform for CVD technique in low temperature polycrystalline silicon technique, and described etching gas is nitrogen trifluoride (NF3) gas.
By the machine platform maintaining method of the application, by means of etching gas and O2Room, chamber is carried out chemically cleaning, and by means of air, room, chamber is carried out physics and clean, such that it is able to remove the foreign matter of residual in room, chamber, and the speed of room, chamber cooling can be accelerated simultaneously. Owing to having been cleaned room, chamber before opening room, chamber and maintaining, it is possible to reduce the cleaning maintenance time opening room, chamber, shorten answering a pager's call the time of equipment such that it is able to increase the on-stream time of machine platform.
In addition, owing to, before opening room, chamber, room, chamber having been cleaned, it is possible to reduce the pollution caused by dust free chamber when opening room, chamber such that it is able to maintain the electrical and good rate of product.
Accompanying drawing explanation
The embodiment of the application is described below with reference to appended accompanying drawing, wherein:
Fig. 1 illustrates the schema of machine platform maintaining method in low temperature polycrystalline silicon technique in a kind of prior art;
Fig. 2 illustrates the schema of machine platform maintaining method in the low temperature polycrystalline silicon technique of the first embodiment according to the application;
Fig. 3 illustrates the schema of machine platform maintaining method in the low temperature polycrystalline silicon technique of the 2nd embodiment according to the application; And
Fig. 4 illustrates the schema of machine platform maintaining method in the low temperature polycrystalline silicon technique of the 3rd embodiment according to the application.
Embodiment
Describing the application in detail below in conjunction with Fig. 2 to Fig. 4, wherein identical Reference numeral represents same or similar step.
Fig. 2 illustrates the schema of machine platform maintaining method in the low temperature polycrystalline silicon technique of the first embodiment according to the application. In the machine platform maintaining method of the application shown in fig. 2:
First, after stopping work, do not shut down at once, but perform step S11, with etching gas, room, machine platform chamber is carried out etch processes, and utilize etching gas that room, machine platform chamber is lowered the temperature simultaneously. This process is used for the chemically cleaning to room, machine platform chamber and cooling.
Then, stop chemically cleaning, room, machine platform chamber is suitably ventilated. When the decrease in temperature of room, machine platform chamber is to, during close to envrionment temperature, performing step S12, the room, chamber opening described machine platform is maintained.
Wherein, in step s 11, when machine platform is machine platform for dry etching process in low temperature polycrystalline silicon technique, the etching gas adopted can be SF6And O2Mixture, or CF4And O2Mixture, etching reaction formula is:
SiNx+4F+O=SiF4+ NOx, it is intended that remove residual silicon nitride (SiNx) in the chamber.
Wherein, in step s 11, when machine platform is machine platform for CVD technique in low temperature polycrystalline silicon technique, the etching gas adopted can be nitrogen trifluoride (NF3) gas, etching reaction formula is:
8NF3+3SiH4=4N2+3SiF4+ 12HF, it is intended that remove residual silane (SiH in the chamber4)��
Room, chamber is carried out chemically cleaning by means of etching gas by the present invention, it is possible to remove the foreign matter of residual in room, chamber, can accelerate the speed of room, chamber cooling simultaneously. Owing to having been cleaned room, chamber before opening room, chamber and maintaining, it is possible to reduce the cleaning maintenance time opening room, chamber, shorten answering a pager's call the time of equipment such that it is able to increase the on-stream time of machine platform.
In addition, owing to, before opening room, chamber, room, chamber having been cleaned by etching gas, it is possible to reduce the pollution caused by dust free chamber when opening room, chamber such that it is able to maintain the electrical and good rate of product.
Fig. 3 illustrates the schema of machine platform maintaining method in the low temperature polycrystalline silicon technique of the 2nd embodiment according to the application. The difference of Fig. 3 and Fig. 2 is, in the machine platform maintaining method of the application shown in figure 3:
Between step S11 in fig. 2 and step S12, it is also possible to comprise a step S13, use O2Room, machine platform chamber is carried out ashing (Ashing) process, and utilizes O simultaneously2Room, machine platform chamber is lowered the temperature further. The object of this step uses O2Taken away after oxidizing away some hydrocarbon (C/H) compounds residuing in room, chamber again, thus strengthen the cleaning effect to room, machine platform chamber further, reduce the cleaning maintenance time opening room, chamber further, and reduce the pollution caused by dust free chamber when opening room, chamber further.
Fig. 4 illustrates the schema of machine platform maintaining method in the low temperature polycrystalline silicon technique of the 3rd embodiment according to the application. The difference of Fig. 4 and Fig. 3 is, in the machine platform maintaining method of the application shown in the diagram:
After step S13 shown in figure 3 and before step S12, it is also possible to comprise a step S14, with air, room, machine platform chamber is blown process, and finally make the decrease in temperature of the room, chamber of described machine platform to envrionment temperature. The object of this step is except completing the temperature rapid decrease of room, machine platform chamber to envrionment temperature, also utilize the various particulate matter blowout room, machine platform chamber that wind-force will produce in aforementioned etching and ashing step, thus strengthen the cleaning effect to room, machine platform chamber further, reduce the cleaning maintenance time opening room, chamber further, and reduce the pollution caused by dust free chamber when opening room, chamber further.
By the machine platform maintaining method of the application, by means of etching gas and O2Room, chamber is carried out chemically cleaning, and by means of air, room, chamber is carried out physics and clean, such that it is able to remove the foreign matter of residual in room, chamber, and the speed of room, chamber cooling can be accelerated simultaneously. Owing to having been cleaned room, chamber before opening room, chamber and maintaining, it is possible to reduce the cleaning maintenance time opening room, chamber, shorten answering a pager's call the time of equipment such that it is able to increase the on-stream time of machine platform.
In addition, owing to, before opening room, chamber, room, chamber having been cleaned, it is possible to reduce the pollution caused by dust free chamber when opening room, chamber such that it is able to maintain the electrical and good rate of product.
Although with reference to exemplary embodiment describing the application, it should be understood that term used illustrates and exemplary but not restrictive term. Owing to the application can specifically implement in a variety of forms, so being to be understood that, above-described embodiment is not limited to any aforesaid details, and should explain widely in claim limited range enclosing, therefore fall into the whole change in claim or its equivalency range and remodeling all should be claim of enclosing and contained.
Claims (6)
1. a machine platform maintaining method, comprising:
S11, carries out etch processes with etching gas to the room, chamber of described machine platform, and utilizes described etching gas that the room, chamber of described machine platform is lowered the temperature simultaneously; And
S12, the room, chamber opening described machine platform is maintained.
2. method according to claim 1, also comprises:
S13, between step S11 and S12, carries out ashing treatment with oxygen to the room, chamber of described machine platform, and utilizes described oxygen that the room, chamber of described machine platform is lowered the temperature further simultaneously.
3. method according to claim 2, also comprises:
S14, after described step S13 and before S12, blows process with air to the room, chamber of described machine platform, and finally makes the decrease in temperature of the room, chamber of described machine platform to envrionment temperature.
According to method described in any one in claim 1-3, wherein, 4. described machine platform is machine platform for dry etching process in low temperature polycrystalline silicon technique, and described etching gas is the mixture of sulfur hexafluoride gas and oxygen.
According to method described in any one in claim 1-3, wherein, 5. described machine platform is machine platform for dry etching process in low temperature polycrystalline silicon technique, and described etching gas is the mixture of carbon tetrafluoride gas and oxygen.
According to method described in any one in claim 1-3, wherein, 6. described machine platform is machine platform for chemical vapor deposition method in low temperature polycrystalline silicon technique, and described etching gas is gas of nitrogen trifluoride.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410628282.XA CN105655230A (en) | 2014-11-10 | 2014-11-10 | Machine maintenance method |
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| CN201410628282.XA CN105655230A (en) | 2014-11-10 | 2014-11-10 | Machine maintenance method |
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Citations (5)
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| CN1787182A (en) * | 2004-12-10 | 2006-06-14 | 上海宏力半导体制造有限公司 | Method for reducing sediment of reacting chamber |
| CN101204705A (en) * | 2006-12-21 | 2008-06-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method of cleaning chamber with silicon chip erosion |
| US20080236482A1 (en) * | 2007-03-27 | 2008-10-02 | Jun Sonobe | Method for low temperature thermal cleaning |
| CN101540272A (en) * | 2009-04-24 | 2009-09-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma cleaning method for removing byproduct in chamber and plasma processing system |
| CN101670345A (en) * | 2008-09-11 | 2010-03-17 | 和舰科技(苏州)有限公司 | Method for cleaning reaction chamber |
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2014
- 2014-11-10 CN CN201410628282.XA patent/CN105655230A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1787182A (en) * | 2004-12-10 | 2006-06-14 | 上海宏力半导体制造有限公司 | Method for reducing sediment of reacting chamber |
| CN101204705A (en) * | 2006-12-21 | 2008-06-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method of cleaning chamber with silicon chip erosion |
| US20080236482A1 (en) * | 2007-03-27 | 2008-10-02 | Jun Sonobe | Method for low temperature thermal cleaning |
| CN101670345A (en) * | 2008-09-11 | 2010-03-17 | 和舰科技(苏州)有限公司 | Method for cleaning reaction chamber |
| CN101540272A (en) * | 2009-04-24 | 2009-09-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma cleaning method for removing byproduct in chamber and plasma processing system |
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