CN1787182A - Method for reducing sediment of reacting chamber - Google Patents
Method for reducing sediment of reacting chamber Download PDFInfo
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- CN1787182A CN1787182A CN 200410089398 CN200410089398A CN1787182A CN 1787182 A CN1787182 A CN 1787182A CN 200410089398 CN200410089398 CN 200410089398 CN 200410089398 A CN200410089398 A CN 200410089398A CN 1787182 A CN1787182 A CN 1787182A
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- etching
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Abstract
The invention provides a method able to reduce deposits in a reaction cavity, applied to making etching process in the reaction cavity, comprising the following steps of: first, in turn making etching process and cineration process in the reaction cavity and feeding in the gas needed for the cineration process so as to shorten the time for the cineration process to eliminate the deposits in the reaction cavity; successively, after the etching process, making regular preventing and maintaining operation. The invention can save the manpower and material resources and reduce the possibility of artificial carelessness.
Description
Technical field
The present invention relates to a kind of method for reducing sediment of reacting chamber, particularly a kind of etching technics that carries out in reaction chamber is reduced to the number of times of removing the periodic maintenance operation that deposit was carried out with this.
Background technology
In the manufacture process of integrated circuit (Integrated Circuits), usually need on silicon chip, make the pattern (Pattern) of atomic thin size.And the topmost generation type of these fine patterns, be to utilize etching (Eating) technology, with little shadow (Lithography) photoresist pattern that technology produced, no matter be line, face or hole, the loyal beneath material of photoresist that inerrably is transferred to is to form the due complicated architectures of whole integrated circuit, therefore, lithographic technique and little shadow technology are collectively referred to as the pattern transfer technology, occupy very consequence in semiconductor technology.
Yet in etching technics, always can be accompanied by some on the inwall of reaction chamber because of deposit that etching technics produced, deposit on the reaction chamber inwall can make the efficient of etching technics lower, keep good efficiency in order to make etching technics, therefore after etching technics finishes, extra cineration technics must be arranged, remaining deposit on the cleaning reaction chamber inner wall by this improves the efficient of etching technics.
But after thousands of microns film etching of process, because of particulate peels off pollution problems, the reaction chamber inwall has been accumulated a large amount of deposits at the same time, must be at inwall and the etching apparatus in the chamber and the part of reaction chamber, carry out regular preventive maintenance operation, elimination comprises the deposit that reaches on the reaction chamber inwall on etching apparatus and the part, common regular preventive maintenance method is to carry out in the mode of craft, removes at the deposit that reaches on the reaction chamber inwall on etching apparatus and the part.
Yet because of carrying out regular preventive maintenance, be to carry out corrective maintenance, in the process of maintenance, may make equipment component break down because of artificial carelessness with manual mode, though artificial carelessness is should not take place, but unavoidable.
Mirror is arranged at this, the present invention proposes a kind of method for reducing sediment of reacting chamber, is useful in the etching technics that the etching apparatus in the reaction chamber carries out, and is present in these shortcomings in the common technology with solution.
Summary of the invention
Main purpose of the present invention is to provide a kind of reducing sediment of reacting chamber method, it is because of reducing sedimental generation in the reaction chamber, make at equipment part in the reaction chamber and the deposit on the chamber inner wall, the number of times of designed periodic maintenance maintenance reduces, and can reduce the cost of periodic maintenance maintenance and artificial carelessness.
In order to achieve the above object, method for reducing sediment of reacting chamber of the present invention, be useful in the etching technics that carries out in the reaction chamber, this method is in same reaction chamber cineration technics to be right after after etching technics, cineration technics impels the minimizing that deposit continues on the reaction chamber inwall, sedimental minimizing can promote the efficient and the quality of etching, because of the effect of making because of ashing of the deposit accumulative speed on the reactor wall reduces, the relative number of times that carries out regular preventive maintenance that also makes reduces, except that the expense that can reduce periodic maintenance, also can reduce the possibility that human negligence takes place, in addition, this method can make the product etch period shorten, and can reach the effect of saving man-hour.
Description of drawings
Further specify purpose of the present invention, technology contents, characteristics and beneficial effect thereof below in conjunction with drawings and the specific embodiments.
Fig. 1 is the schematic flow sheet of reducing sediment of reacting chamber method of the present invention.
Embodiment
The present invention is the human negligence that is produced because of the periodic maintenance operation in order to improve, reduce the number of times of the interior etching apparatus of reaction chamber and part and chamber wall periodic maintenance, a kind of method for reducing sediment of reacting chamber is proposed, this method is to carry out adding cineration technics in the etching technics in reaction chamber, reduces sedimental generation on the chamber inner wall by cineration technics.
Fig. 1 is the schematic flow sheet of method for reducing sediment of reacting chamber of the present invention, at first shown in step S10, in reaction chamber, carry out etching technics and cineration technics successively, etching technics can be dry etching, wet etching or ion etching, cineration technics is modal to be oxonium ion cineration technics (Oxide Plasma Ashing Process), and feed required gas such as the oxygen of cineration technics, eliminate deposit on the reaction chamber inwall by cineration technics, because the deposit on the wall of chamber can influence the efficient of etching technics, because deposit increases, the efficient of etching technics is just low more; This method is the deposit on the more real-time elimination chamber wall of technology usually, the efficient height of etching, and the quality of etching also can obtain to improve with the speed of finishing.
Then shown in step S20, after etching technics finishes, equipment in the reaction chamber and part and chamber wall are carried out the regular prevention and maintain operation of routine, the regular prevention and maintain of this routine, be to peel off pollution will to influence etching accurate because of carrying out particulate that etching produced for a long time, thus the necessary operation procedure that derives.Periodic maintenance is to being very important at etching technics.Because of cineration technics can not be eliminated deposit on the wall of chamber fully, the speed of deposit accumulation on the wall of chamber is lowered, to remove deposit completely and only do periodic maintenance one way, therefore, for quality and the efficient of keeping etching, especially important that carries out that the periodic maintenance maintenance operation of routine just shows.
Yet the regular prevention and maintain of this kind routine is to carry out with manual mode, to in the part of equipment, the reaction chamber and the deposit on the chamber wall removed, the staff needs wear to cover sheath (liner) to come sediment cleaning, moreover artificial carelessness takes place in manual mode easily, and makes the fault of part such as electrode of equipment, no matter be to change to cover sheath, or artificial fault, all can make and recover the required time elongation of etching operation, do not meet economic benefit.
Method of the present invention is carried out etching technics and podzolic process successively in same reaction chamber, compare with common technology, deposit in the reaction chamber reduces because of the real-time effect of cineration technics, etching efficient and quality increase because of sedimental minimizing on the wall of chamber, more make chamber wall and equipment and part do the number of times of periodic maintenance, be less than common technology because of the speed of deposit accumulation is slow, elongated secondary cleaning Mean Time Between Replacement (MTBC) than common technology still more, this method can reach the effect that reduces the periodic maintenance number of times, can save the expense of periodic maintenance manpower and the loss of consumptive material, reach the possibility that reduces human negligence.
Above-described embodiment is only in order to illustrate technological thought of the present invention and characteristics; its purpose makes those of ordinary skill in the art can understand content of the present invention and is implementing according to this; the scope of this patent also not only is confined to above-mentioned specific embodiment; be all equal variation or modifications of doing according to disclosed spirit, still be encompassed in protection scope of the present invention.
Claims (4)
1, a kind of method for reducing sediment of reacting chamber is applicable to an etching equipment that is positioned at a reaction chamber, and an etching technics that is carried out comprises the following steps:
In this reaction chamber, carry out this etching technics and a cineration technics successively, and feed the required gas of this cineration technics, shorten making this cineration technics eliminate the sedimental time in this reaction chamber with this; And
After etching technics finishes, this reaction chamber and this etching apparatus are carried out a regular prevention and maintain operation.
2, according to claim 1ly reduce sedimental method, it is characterized in that: described etching technics is selected from dry etching, wet etching or ion etching.
3, according to claim 1ly reduce sedimental method, it is characterized in that: described gas is oxygen.
4, according to claim 1ly reduce sedimental method, it is characterized in that: described gas form is an ion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410089398 CN1787182A (en) | 2004-12-10 | 2004-12-10 | Method for reducing sediment of reacting chamber |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410089398 CN1787182A (en) | 2004-12-10 | 2004-12-10 | Method for reducing sediment of reacting chamber |
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| Publication Number | Publication Date |
|---|---|
| CN1787182A true CN1787182A (en) | 2006-06-14 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200410089398 Pending CN1787182A (en) | 2004-12-10 | 2004-12-10 | Method for reducing sediment of reacting chamber |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105655230A (en) * | 2014-11-10 | 2016-06-08 | 上海和辉光电有限公司 | Machine maintenance method |
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2004
- 2004-12-10 CN CN 200410089398 patent/CN1787182A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105655230A (en) * | 2014-11-10 | 2016-06-08 | 上海和辉光电有限公司 | Machine maintenance method |
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