TWI253100B - Method of reducing the sediment for reaction chamber - Google Patents

Abstract

This invention relates to a method of reducing the sediment for reaction chamber. It is suitable for the etching process in the reaction chamber. It comprises the following procedures: firstly, proceeding the etching process and ashing process in the reaction chamber, and venting the necessary gas for ashing process. By this way, it reduces the time of elimination the sediment in the reaction chamber in the ashing process. Furthermore, after the etching process completes, the regular preventive maintenance operation is proceeded. Subsequently, it reduces the sediment for reaction chamber, the manufacture time of product, the times of the regular preventive maintenance. Therefore, it saves the necessary manpower and consuming material for the regular service maintenance. Finally, it reduces the possibility of the artificial mistake.

Description

1253100 V. INSTRUCTION DESCRIPTION (1) [Technical field to which the invention pertains] The present invention relates to a method for reducing deposits in a reaction chamber, and more particularly to an etching process performed in a reaction chamber, thereby reducing the removal of deposits The number of regular maintenance operations performed. [Prior Art] In the manufacturing process of integrated circuits, it is often necessary to make a pattern of extremely fine size on a wafer. The most important way to form these fine patterns is to use the etching technique to create a photoresist pattern produced by Lithography.

It is a line, surface or hole that is faithfully transferred to the material under the photoresist to form the complex structure of the entire integrated circuit. Therefore, etching technology and lithography are collectively referred to as pattern transfer technology. Semiconductor manufacturing plays an extremely important role. However, in the etching process, the inner wall of the reaction chamber is always accompanied by some deposits due to the etching process, and the deposition on the inner wall of the reaction chamber reduces the efficiency of the etching process, in order to maintain the etching process well. The efficiency of the process is therefore required to have an additional ashing process after the end of the etching process: thereby removing the remaining deposits on the walls of the reaction chamber for efficiency. After the inscription, a large amount of sediment has accumulated due to the particle wall. The equipment and parts of the chamber, including the inner wall of the reaction chamber and etching, are regularly maintained.

However, in the case of dyeing through thousands of micrometers of film, in the reaction chamber, regular maintenance work must be carried out on the inner wall and cavity of the reaction chamber to eliminate deposits on the equipment and parts.

1253100 V. INSTRUCTIONS (2) Workmanship is performed to remove deposits on the walls of the reaction chamber and on the etching equipment and parts. However, due to regular preventive maintenance, equipment maintenance is carried out by hand. In the course of maintenance, some equipment may be malfunctioned due to human error. Human error may not occur, but it is inevitable. In view of this, the present invention provides a method for reducing deposits in a reaction chamber that is suitable for use in etching processes performed by etching equipment within a reaction chamber to address such deficiencies that exist in the prior art.

SUMMARY OF THE INVENTION The main object of the present invention is to provide a method for reducing the deposition of a reaction chamber by reducing the generation of deposits in the reaction chamber so that the equipment parts inside the reaction chamber and the deposits on the inner wall of the chamber are The number of scheduled maintenance is reduced and the cost of regular maintenance and human error can be reduced.

For the above purposes, the method for reducing the deposition of the reaction chamber of the present invention is suitable for the etching process performed in the reaction chamber. The method is to ash the ashing process immediately after the etching process in the same reaction chamber. The process promotes the continuous reduction of deposits on the inner wall of the reaction chamber, and the reduction of deposits can improve the efficiency and quality of the etching process, and the deposition rate of the deposit on the reaction chamber wall is reduced by the action of ashing, and the relative The number of times of regular preventive maintenance is reduced, in addition to reducing the cost of regular maintenance, the possibility of human error can be reduced, and the method can shorten the etching time of the product and achieve the effect of saving man-hours.

Page 6 1253100 V. DESCRIPTION OF THE INVENTION (3) The purpose, technical contents, features and effects achieved by the present invention will be more readily understood by the detailed description of the embodiments and the accompanying drawings. [Embodiment] The present invention is to improve the number of times caused by regular maintenance and repair, reduce the number of times of etching equipment and parts and the wall of the reaction chamber, and propose a method for reducing the deposition of the reaction chamber. The method adds an ashing process to the etching process in the reaction chamber, and reduces the generation of deposits on the inner wall of the chamber by the ashing process. The first figure is a schematic flow chart of the method for reducing the deposition of the reaction chamber of the present invention. First, as shown in step S10, the etching process and the ashing process are sequentially performed in the reaction chamber, and the etching process can be dry etching or wet. Etching or plasma etching, the most common ashing process is the Oxide Plasma Ashing Process, and the gas required for the ashing process, such as oxygen, is removed by the ashing process. Deposits on the wall, because the deposit on the wall of the chamber affects the efficiency of the etching process, because the deposition increases, the efficiency of the etching process is lower; this method eliminates deposits on the cavity wall more instantaneously than the prior art. The efficiency of etching is naturally better, and the quality of the engraving and the speed of completion are also relatively high. Then, as shown in step S20, after the end of the etching process, routine routine preventive maintenance operations are performed on the equipment and parts and the chamber wall in the reaction chamber. This routine regular preventive maintenance is due to long-term engraving. The resulting particulate spalling contamination will affect the precise etching process and the necessary operating procedures derived. Regular maintenance is important for the etching process. Ashing process

1253100 V., invention description (4) inflammation · can not completely eliminate the speed of a journey, therefore, regular maintenance, but the parts of such equipment, the staff need, the manual method of the electrode failure, will make recovery | In addition to the cavity wall 'to complete the operation of the routine reaction cavity, the cover is easy to understand. It is the sufficiency of the work on the job. The regular pre-indoor room is used to cover the cover and replace the cover. Accumulation, only to make the sediment on the wall of the cavity only to do the quality and efficiency of regular dimension, the exception is important. Anti-maintenance is to manually enter the deposit on the wall of the chamber plus (1 iner) to clean up the deposit, and the loss, so that the equipment = sheath, or artificial inter-turn length, does not meet the economic accumulation Overhaul and maintenance of the line, the need to remove the parts such as faults, the maintenance of the graying process, the maintenance of the product, and the maintenance of the process of the present invention, which can be described as the immediate reduction of the number of times. Can maintain humanity. Only the above definition of the shape, the method included in the present method is increased more than the habit, and the invention is constructed and the invention is inconsistent due to the fact that the deposition 矣0 technique is used to reduce the cost of the constant force. The technology is reduced, and the accumulation of materials is longer. The second-phase maintenance and consumables are only for the scope of this patent. The patent should be used in the chamber. The reaction chamber etching efficiency wall and the speed of the installation are lower than the number of times of cleaning and maintenance. . Therefore, it is within the scope of God. The etch process and the deposits in order are ashed and quality-caused because the surface of the cavity is cleaned and the parts are regularly repaired less slowly than the conventional technology, the time interval (MTBC), which can save the periodic reduction. A good example of human error is not changed or repaired according to the scope of the application of the present invention.

1253100

Claims (1)

1253100 Six 'patent application scope 1 · · A method for reducing the deposition of reaction chambers, suitable for an etching device in a reaction chamber, one of the etching processes, comprising the following steps: Performing the etching process and an ashing process, and introducing a gas required for the ashing process, thereby reducing the time for the ashing process to eliminate deposits in the reaction chamber; and after the etching process is finished, The reaction chamber and the etching apparatus perform a regular preventive maintenance operation. 2. The method of reducing deposits as recited in claim 1, wherein the etching process is selected from the group consisting of dry etching, wet etching, and plasma etching. 3. A method of reducing deposits as described in claim 1 wherein the gas system is oxygen. 4. A method of reducing deposits as described in claim 1 wherein the gas form is a plasma. Page 10