CN105648533A - Device for growing gallium nitride crystals in liquid-phase manner - Google Patents
Device for growing gallium nitride crystals in liquid-phase manner Download PDFInfo
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- CN105648533A CN105648533A CN201610140081.4A CN201610140081A CN105648533A CN 105648533 A CN105648533 A CN 105648533A CN 201610140081 A CN201610140081 A CN 201610140081A CN 105648533 A CN105648533 A CN 105648533A
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- reactor
- crucible
- electromagnetic induction
- coil device
- gallium nitride
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B9/00—Single-crystal growth from melt solutions using molten solvents
- C30B9/04—Single-crystal growth from melt solutions using molten solvents by cooling of the solution
- C30B9/08—Single-crystal growth from melt solutions using molten solvents by cooling of the solution using other solvents
- C30B9/10—Metal solvents
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention relates to a device for growing gallium nitride crystals in a liquid-phase manner. The device comprises a reaction kettle, a heating device arranged outside the reaction kettle, a crucible arranged in the reaction kettle, a growing solution and seed crystals loaded into the crucible and an electromagnetic-induction-driven stirring device, wherein the stirring device includes a stirrer rotating type driven by an electromagnetic induction device and a crucible rotating type driven by the electromagnetic induction device, and the electromagnetic induction device comprises an external coil device arranged outside the reaction kettle, an alternating power source connected with the external coil device, and an internal coil device fixedly connected with a stirrer or the crucible. The device has the advantages that the crystal growing solution can be well mixed by the electromagnetic-induction-driven stirring device, the stirring can be controlled, even growth of the crystals is benefited, and the device is practical.
Description
Technical field
The present invention relates to semiconductor material growing device field, particularly relate to the device of a kind of liquid growth gallium nitride.
Background technology
Gallium nitride (GaN) base semiconductor material is important direct band gap, semiconductor material with wide forbidden band, due to its distinctive bandgap range, excellent physicochemical properties, there is wide market prospect in quasiconductor applications such as bluish-green LED/LD and power devices, and receive publicity. One of basis as GaN semiconductor device application, preparing of high-quality large scale GaN substrate material is particularly important.
Sodium stream method (NaFluxMethod) prepares GaN substrate material, owing to can obtain good crystal mass (104cm-2), become one of optimal path of preparing GaN single crystal body material at present. although compared to high temperature and high pressure method (HighNitrogenPressureSolution) and ammonia full-boiled process (AmmothermalGrowth), sodium stream method is so not harsh to the requirement of grower, but its device still needs to bearing temperature about 800 DEG C simultaneously, the test of pressure about 5MPa, and there is the problem that growth solution mixing is uneven, Chinese patent CN1922345A realizes exterior mechanical rotation by a power transmission shaft running through reactor and is passed to problem uneven to solve growth solution mixing inside reactor, but this design is owing to carry out extra encapsulation process to reactor and power transmission shaft contact position, and device need to bear High Temperature High Pressure simultaneously, therefore the scope of encapsulant selection has been limited to, add the difficulty that device manufactures.
Summary of the invention
For the deficiencies in the prior art, the present invention designs the device of a kind of liquid growth gallium nitride, while realizing growth solution mix homogeneously purpose, it is possible to avoid reactor extra sealing place occur, significantly reduce device manufacture difficulty, save equipment cost.
The technical scheme that the present invention takes is as follows:
A kind of device of liquid growth gallium nitride, including: reactor, be placed in the heater outside reactor, be positioned over the crucible within reactor, crucible is built with Crystal Growth Solution and the seed crystal that is submerged in Crystal Growth Solution, also include electromagnetic induction device and the agitating device driven thereof, specifically have following two:
The first electromagnetic induction device and the agitating device driven thereof, it is characterised in that driven agitator Stirring Crystal Growth Solution by electromagnetic induction device; Described electromagnetic induction device, including: the Inside coil device be placed in the external coil device outside reactor and the alternating source being connected with external coil device, being placed in reactor, external coil device is corresponding with inside and outside Inside coil setting position; Described Inside coil device is arranged on the inside of reactor, is positioned at above crucible, is fixed on reactor top by axis; Described agitator is immersed in growth solution, is fixedly connected on the lower section of Inside coil device, and described electromagnetic induction device drives agitator Stirring Crystal Growth Solution.
The second electromagnetic induction device and the agitating device driven thereof, it is characterised in that driven crucible rotation agitation crystal growth solution by electromagnetic induction device;Described electromagnetic induction device, including: the Inside coil device be placed in the external coil device outside reactor and connected alternating source, being placed in reactor, external coil device is corresponding with inside and outside Inside coil setting position; Described support platform is fixedly connected on above Inside coil device, and crucible is fixedly connected on above support platform; Described electromagnetic induction device, is in below reactor bottom, crucible.
The type of described agitator is, or rotary propeller type, or turbine type, or paddle, or anchor formula, or hinging type, or helical-ribbon type.
Described Inside coil device, external coil device are, or hollow coil, or ferrite coil, or iron-core coil, or copper core coil.
Described Inside coil device, external coil device, its coil number is all higher than or equal to one.
Described alternating source is, or alternating current power supply, or the irregular power supply of voltage x current size and Orientation catch cropping at any time.
Described seed crystal is, or Sapphire Substrate, or silicon carbide substrates, or silicon substrate, or the compound substrate of deposited on substrates nitride film, or nitride self-supported substrate; The placement of described seed crystal, or horizontal positioned, or non-horizontal placement; Described seed crystal is at least provided with a piece of.
The beneficial effects of the present invention is:
When 1, reactor not being caused additional seal place, it is achieved the mix homogeneously of Crystal Growth Solution, promote crystal homoepitaxial.
2, the current/voltage by alternating source is exported controls, it is achieved stir controlled, promotes gallium nitride controllable growth.
Accompanying drawing explanation
Accompanying drawing 1 is the device schematic diagram of the liquid growth gallium nitride in the embodiment of the present invention one;
Accompanying drawing 2 is the device schematic diagram of the liquid growth gallium nitride in the embodiment of the present invention two.
Description of reference numerals:
11: external coil device, 12: Inside coil device, 13: alternating source, 14: axis, 15: agitator, 16: support platform, 21: heater, 22: reactor, 23: crucible, 24: gas path device, 3: Crystal Growth Solution, 4: seed crystal.
Detailed description of the invention
For the ease of the understanding of those skilled in the art, below in conjunction with the drawings and specific embodiments, the invention will be further described.
Embodiment one:
As shown in Figure 1, a kind of device of liquid growth gallium nitride, including: reactor 22, it is placed in the heater 21 outside reactor 22, being positioned over the crucible 23 within reactor 22, crucible 23 is built with growth solution 3 and is immersed in seed crystal 4 therein, also includes electromagnetic induction device and the agitator 15 being immersed in Crystal Growth Solution 3; Described electromagnetic induction device, including: alternating source 13 that the external coil device 11 being placed in outside reactor 22 is connected with external coil device 11, the Inside coil device 12 being placed in reactor 22, external coil device 11 is corresponding with inside and outside Inside coil device 12 position; Described Inside coil device 12, is arranged on the inside of reactor 22, is positioned at above crucible 23, is fixed on reactor 22 top by axis 14; Described agitator 15 is immersed in growth solution 3, is fixedly connected on the lower section of Inside coil device 12, and described electromagnetic induction device drives agitator 15 Stirring Crystal Growth Solution 3.
Regulation and control gas path device 24, heater 21, heat up and be forced into default growth conditions, makes growth raw material melt as Crystal Growth Solution 3; Regulation and control alternating source 13, makes agitator 15 with axis 14 for axle center Stirring Crystal Growth Solution 3, makes dissolution of crystals mix homogeneously, for gallium nitride homoepitaxial environment on seed crystal 4;Alternating source 13 is arranged to the output of pulse voltage electric current, and agitator 15 rotates round axis 14 regularly, promotes GaN growth; Treating that growth completes, close power supply 13, cooling decompression takes out crystal.
Embodiment two:
As shown in Figure 2, a kind of device of liquid growth gallium nitride, including: reactor 22, it is placed in the heater 21 outside reactor 22, be positioned over the crucible 23 within reactor 22, crucible 23 built with Crystal Growth Solution 3, be immersed in seed crystal 4 therein, support platform 16 and electromagnetic induction device; Electromagnetic induction device drives crucible 23 Stirring Crystal Growth Solution 3; Described electromagnetic induction device, including: the Inside coil device 12 be placed in the external coil device 11 outside reactor 22 and connected alternating source 13, being placed in reactor 22, external coil device 11 is corresponding with inside and outside Inside coil device 12 position; Described support platform 16 is fixedly connected on above Inside coil device 12, and crucible 23 is fixedly connected on above support platform 16; Described electromagnetic induction device, is in below reactor 22 bottom, crucible 23.
Regulation and control gas path device 24, heater 21, heat up and be forced into default growth conditions, makes growth raw material melt as Crystal Growth Solution 3; Regulation and control power supply 13, order supports platform 16 and rotates for axle center with axis 14 together with crucible 23, makes Crystal Growth Solution 3 dissolve mix homogeneously, for gallium nitride homoepitaxial environment on seed crystal 4; Alternating source 13 is arranged to the output of sine wave shaped voltage electric current, makes crucible 23 rotate round axis 14 regularly, promote GaN growth; Treating that growth completes, close power supply 13, cooling decompression takes out crystal.
It is to be appreciated that the above is not the restriction to technical solution of the present invention, without departing under the premise creating design of the present invention, any apparent replacement is all within protection scope of the present invention.
Claims (7)
1. the device of liquid growth gallium nitride, including: the built-in Crystal Growth Solution of reactor, the heater being placed in outside reactor, the crucible being positioned in reactor, crucible, the seed crystal being immersed in Crystal Growth Solution, it is characterized in that, also include electromagnetic induction device and agitator; Described electromagnetic induction device, including: the Inside coil device be placed in the external coil device outside reactor and the alternating source being connected with external coil device, being placed in reactor, external coil device is corresponding with inside and outside Inside coil setting position; Described Inside coil device is arranged on the inside of reactor, is positioned at above crucible, is fixed on reactor top by axis; Described agitator is immersed in growth solution, is fixedly connected on the lower section of Inside coil device; Described electromagnetic induction device drives agitator Stirring Crystal Growth Solution.
2. the device of liquid growth gallium nitride according to claim 1, it is characterised in that the type of described agitator is: or rotary propeller type, or turbine type, or paddle, or anchor formula, or hinging type, or helical-ribbon type.
3. the device of liquid growth gallium nitride, including: reactor, the heater being placed in outside reactor, the crucible being positioned in reactor, at the built-in Crystal Growth Solution of crucible, the seed crystal being immersed in Crystal Growth Solution, it is characterized in that, also include supporting platform and electromagnetic induction device; Described electromagnetic induction device, including: the Inside coil device be placed in the external coil device outside reactor and connected alternating source, being placed in reactor, external coil device is corresponding with inside and outside Inside coil setting position; Described support platform is fixedly connected on above Inside coil device, and crucible is fixedly connected on above support platform; Described electromagnetic induction device, is in below reactor bottom, crucible, and described electromagnetic induction device drives crucible rotation agitation crystal growth solution.
4. the device of the liquid growth gallium nitride according to claim 1,3, it is characterised in that described Inside coil device, external coil device are hollow coils, or ferrite coil, or iron-core coil, or copper core coil.
5. the device of the liquid growth gallium nitride according to claim 1,3, it is characterised in that described Inside coil device, external coil device, its coil number is all higher than or equal to one.
6. the device of the liquid growth gallium nitride according to claim 1,3, it is characterised in that described alternating source is alternating current power supply, or the irregular power supply of voltage x current size and Orientation catch cropping at any time.
7. the device of the liquid growth gallium nitride according to claim 1,3, it is characterised in that described seed crystal is Sapphire Substrate, or silicon carbide substrates, or silicon substrate, or the compound substrate of deposited on substrates nitride film, or nitride self-supported substrate; The placement of described seed crystal is horizontal positioned or non-horizontal placement; Described seed crystal is at least provided with a piece of.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610140081.4A CN105648533A (en) | 2016-03-12 | 2016-03-12 | Device for growing gallium nitride crystals in liquid-phase manner |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610140081.4A CN105648533A (en) | 2016-03-12 | 2016-03-12 | Device for growing gallium nitride crystals in liquid-phase manner |
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| CN105648533A true CN105648533A (en) | 2016-06-08 |
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| CN201610140081.4A Pending CN105648533A (en) | 2016-03-12 | 2016-03-12 | Device for growing gallium nitride crystals in liquid-phase manner |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112609242A (en) * | 2020-12-05 | 2021-04-06 | 无锡英诺赛思科技有限公司 | Gallium nitride single crystal growth device |
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| CN1518138A (en) * | 2003-01-20 | 2004-08-04 | 松下电器产业株式会社 | Method for manufacturing N0.3 family nitride substrate |
| CN101418469A (en) * | 2007-10-26 | 2009-04-29 | 丰田合成株式会社 | Group iii nitride semiconductor manufacturing system |
| CN102282299A (en) * | 2009-01-21 | 2011-12-14 | 日本碍子株式会社 | Group 3b nitride crystal plate |
| US20130061799A1 (en) * | 2011-09-14 | 2013-03-14 | Ricoh Company, Ltd. | Manufacturing method of group 13 nitride crystal |
| US20130224100A1 (en) * | 2012-02-24 | 2013-08-29 | The Regents Of The University Of California | Electromagnetic mixing for nitride crystal growth |
| CN103603049A (en) * | 2013-12-06 | 2014-02-26 | 北京大学东莞光电研究院 | Multi-piece nitride monocrystal material growing device and method |
| CN105256372A (en) * | 2015-11-27 | 2016-01-20 | 北京大学东莞光电研究院 | GaN single crystal device |
-
2016
- 2016-03-12 CN CN201610140081.4A patent/CN105648533A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1518138A (en) * | 2003-01-20 | 2004-08-04 | 松下电器产业株式会社 | Method for manufacturing N0.3 family nitride substrate |
| CN101418469A (en) * | 2007-10-26 | 2009-04-29 | 丰田合成株式会社 | Group iii nitride semiconductor manufacturing system |
| CN102282299A (en) * | 2009-01-21 | 2011-12-14 | 日本碍子株式会社 | Group 3b nitride crystal plate |
| US20130061799A1 (en) * | 2011-09-14 | 2013-03-14 | Ricoh Company, Ltd. | Manufacturing method of group 13 nitride crystal |
| US20130224100A1 (en) * | 2012-02-24 | 2013-08-29 | The Regents Of The University Of California | Electromagnetic mixing for nitride crystal growth |
| CN103603049A (en) * | 2013-12-06 | 2014-02-26 | 北京大学东莞光电研究院 | Multi-piece nitride monocrystal material growing device and method |
| CN105256372A (en) * | 2015-11-27 | 2016-01-20 | 北京大学东莞光电研究院 | GaN single crystal device |
Non-Patent Citations (1)
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Cited By (1)
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|---|---|---|---|---|
| CN112609242A (en) * | 2020-12-05 | 2021-04-06 | 无锡英诺赛思科技有限公司 | Gallium nitride single crystal growth device |
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