CN105633261B - A kind of photo-thermal electricity switching memory devices and preparation method - Google Patents
A kind of photo-thermal electricity switching memory devices and preparation method Download PDFInfo
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- CN105633261B CN105633261B CN201610003306.1A CN201610003306A CN105633261B CN 105633261 B CN105633261 B CN 105633261B CN 201610003306 A CN201610003306 A CN 201610003306A CN 105633261 B CN105633261 B CN 105633261B
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- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
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Abstract
The invention discloses a kind of photo-thermal electricity switching memory devices and preparation method, including：Insulating layer (1), phase-changing energy storage material layer (3), thermoelectric material layer (4) and heat dissipating layer (5), the lower part of insulating layer (1) seals to form covering space (2) with thermoelectric material layer (4) upper surface, shape is vacuumized inside covering space (2), it covers and phase-changing energy storage material layer (3) is accommodated in space (2), phase-changing energy storage material layer (3) forms good heat conduction with thermoelectric material layer (4) upper surface and connect, heat dissipating layer (5) forms good heat conduction with thermoelectric material layer (4) lower surface and connect, thermoelectric material layer (4) upper surface is high temperature face, lower surface is low temperature face.The present invention can realize the continuous work in the case where solar energy is interrupted, while itself can carry out energy storage, so as to effectively promote the utilization ratio of solar energy, reduce carrying cost, have broad prospect of application in green energy resource technical field relative to conventional photovoltaic technology.
Description
Technical field
The present invention relates to the energy and Material Field.It is mutually tied with thermoelectric material based on phase-changing energy storage material more particularly to one kind
It closes, realizes that light heat to electricity conversion and electric energy uninterruptedly export under Driven by Solar Energy.
Background technology
Solar energy is a kind of clean energy of green, and it is important to realize that it makes full use of the sustainable development for the mankind to have
Meaning.Opto-electronic conversion is one of approach efficiently used at present to solar energy.Solar energy can be turned by photovoltaic module
Change electric energy into.But since solar energy has discontinuity, photovoltaic generation can not continue to carry out, and need additional electric storage device pair
Its electric energy generated is stored.In addition production photovoltaic cell raw materials are in short supply, cause holistic cost higher.
Invention content
For the above-mentioned prior art the problem of, the purpose of the present invention is to provide a kind of photo-thermal electricity transit storages
Part and preparation method, realize the sustainable supply of electric energy in the case of solar energy interruption, reduce cost, fully promote the profit to solar energy
With rate.
Technical scheme is as follows：
A kind of photo-thermal electricity switching memory devices, including：Insulating layer (1), phase-changing energy storage material layer (3), thermoelectric material layer (4)
With heat dissipating layer (5), lower part and thermoelectric material layer (4) upper surface of insulating layer (1) seal to form covering space (2), cover space
(2) it is internal to vacuumize shape, phase-changing energy storage material layer (3), phase-changing energy storage material layer (3) and thermoelectricity material are accommodated in covering space (2)
The bed of material (4) upper surface forms good heat conduction connection, and heat dissipating layer (5) forms good heat conduction with thermoelectric material layer (4) lower surface
Connection, thermoelectric material layer (4) upper surface are high temperature face, and lower surface is low temperature face, and sunlight is radiated at phase transformation storage through insulating layer
Energy material layer realizes that the capture to sunlight absorbs, while be converted to thermal energy and stored, finally by phase-changing energy storage material layer
Electric energy is converted heat by thermoelectric material layer；In the case where sunlight is interrupted, thermoelectric material layer can also utilize phase transformation
The thermal energy that material internal is stored persistently carries out the output of electric energy.
The photo-thermal electricity switching memory devices, the insulating layer use transparent organic glass or unorganic glass.
The photo-thermal electricity switching memory devices, the thermoelectric material layer include inorganic material bismuth telluride-base thermoelectric generation film
Or organic polymer PEDOT:PSS thermoelectric material base thermoelectric generation films.
The photo-thermal electricity switching memory devices, the heat dissipating layer include material for copper, steel, aluminium, iron, alloy, heat dissipation side
Formula for natural heat dissipation, air blast cooling, Forced water cooling cooling fin.
The photo-thermal electricity switching memory devices, the setting phase change energy storage material preparation method are：By graphene oxide
Powder is scattered in by ultrasound and mechanical agitation means in deionized water, obtains the graphite oxide of a concentration of 1mg/mL-30mg/mL
Aqueous solution；Directly it is freeze-dried, obtains three-dimensional macro grapheme material；Three-dimensional macro graphene is used as support
Setting and light absorbing material, the polyethylene glycol that molecular weight is 10000 are phase-changing energy storage material, the side adsorbed by vacuum impregnation
Three-dimensional grapheme in vacuum drying oven is immersed in polyethylene glycol melt, prepares composite shape-stabilized phase change energy storage material, graphene by method
Mass content is 0.5%-10%.
The photo-thermal electricity switching memory devices, the setting phase change energy storage material select mass fraction be 20% it is highly dense
It spends polyethylene, 1% black dyes, 79% paraffin to prepare, for paraffin as phase-change material, high density polyethylene (HDPE) is support setting material
Material, to promote absorbance, preparation method is black dyes：High density polyethylene (HDPE) is melted at 160 DEG C, then adds in dye
Material and paraffin are mixed, and pass through compound acquisition composite shape-stabilized phase change energy storage material.
The preparation method of any photo-thermal electricity switching memory devices, step are as follows：
Step 1：Support setting material and promotion absorbance material and phase-change material is mutually compound, and preparation can be realized
The setting phase change energy storage material of photothermal conversion；
Step 2：Setting phase change energy storage material lower surface is fitted in the high temperature of thermoelectric generation film by thermal interfacial material
Face；
Step 3：By the use of transparent organic or inorganic glass as insulating layer, phase-change material is covered, and make covering space shape
Into vacuum state；
Step 4：Heat dissipating layer by the low temperature face of thermal interfacial material and thermoelectric generation film is fitted, that is, obtains the light
Heat to electricity conversion memory device.
The preparation method, the setting phase change energy storage material preparation method are：Graphene oxide powder is passed through super
Sound and mechanical agitation means are scattered in deionized water, obtain the graphene oxide water solution of a concentration of 1mg/mL-30mg/mL；
Directly it is freeze-dried, obtains three-dimensional macro grapheme material；Three-dimensional macro graphene is used as support setting and light
Absorbing material, the polyethylene glycol that molecular weight is 10000 are phase-changing energy storage material, the method adsorbed by vacuum impregnation, in vacuum
Three-dimensional grapheme is immersed in polyethylene glycol melt in baking oven, prepares composite shape-stabilized phase change energy storage material, graphene mass content
For 0.5%-10%.
The preparation method, the setting phase change energy storage material select the high density polyethylene (HDPE) that mass fraction is 20%,
Prepared by 1% black dyes, 79% paraffin, paraffin is as phase-change material, and high density polyethylene (HDPE) is supports setting material, black dyes
To promote absorbance, preparation method is：High density polyethylene (HDPE) is melted at 160 DEG C, then add in dyestuff and paraffin into
Row mixing, passes through compound acquisition composite shape-stabilized phase change energy storage material.
The invention has the characteristics that and advantage：
1 present invention firstly discloses using designed in conjunction by phase-changing energy storage material and thermoelectric material and prepare photo-thermal electricity and turn
The method for changing memory device.
2 devices disclosed by the invention realize the continuous supply of electrical energy in the case where solar energy is interrupted.
3 present invention improve the effective rate of utilization to solar energy, reduce the holistic cost of opto-electronic conversion and storage.To green
The development of the color energy is of great significance.
Description of the drawings
Fig. 1 is photo-thermal electricity switching memory devices structure diagram；
Fig. 2 is photo-thermal electricity switching memory devices course of work schematic diagram；
Fig. 3 is phase-change material layers abosrption spectrogram involved by embodiment 1；
Fig. 4 is phase-change material layers photothermal conversion curve graph involved by embodiment 1；
Fig. 5 is that (left column is pure phase-change material 30 to phase-change material layers setting performance test chart involved by embodiment 1 in figure
DEG C, 70 DEG C, the performance test results at 90 DEG C, right row are the property at 30 DEG C, 70 DEG C, 90 DEG C of graphene composite phase-change energy storage material
Energy test result)；
Specific embodiment
Below in conjunction with specific embodiment, the present invention is described in detail.
As shown in Figure 1, photo-thermal electricity switching memory devices structure includes：Organic glass insulating layer 1, phase-changing energy storage material layer 3,
Thermoelectric material layer 4 and heat dissipating layer 5, lower part and 4 upper surface of thermoelectric material layer of organic glass insulating layer 1 seal to form covering space
2, it covers and shape is vacuumized inside space 2, covering accommodates phase-changing energy storage material layer 3, phase-changing energy storage material layer 3 and thermoelectricity in space 2
4 upper surface of material layer forms good thermal connection, and heat dissipating layer 5 forms good thermal connection, thermoelectricity with 4 lower surface of thermoelectric material layer
4 upper surface of material layer is high temperature face, and lower surface is low temperature face.
Embodiment 1
Graphene oxide powder is scattered in by ultrasound and mechanical agitation means in deionized water, obtained dense by the first step
Spend the graphene oxide water solution for 1mg/mL-30mg/mL.Directly it is freeze-dried, obtains three-dimensional macro graphene
Material.
Second step, using three-dimensional macro graphene, molecular weight is 10000 poly- second two for support setting and light absorbing material
Alcohol is phase-changing energy storage material.The method adsorbed by vacuum impregnation, immerses polyethylene glycol in vacuum drying oven by three-dimensional grapheme
In melt, composite shape-stabilized phase change energy storage material is prepared, graphene mass content is 0.5%-10%.
Second step, it is using inorganic material bismuth telluride-base thermoelectric generation film as thermoelectric material layer, High thermal-conductive silicone grease is uniform
The high temperature face of thermoelectric generation film is applied to, then by the fitting of the composite shape-stabilized phase change energy storage material of preparation thereon.
Third walks, and the phase-changing energy storage material edge for being fitted in thermoelectric generation film surface is had with the transparent of sealing rubber ring
Machine glass covers, and covering space is formed vacuum state.
4th step, using water-cooling piece as heat dissipating layer.High thermal-conductive silicone grease is uniformly applied to the low of thermoelectric generation film
Warm face, then by cooling fin fitting thereon.Up to the photo-thermal electricity switching memory devices.
As depicted in figs. 1 and 2, the photo-thermal electricity switching memory devices course of work and principle are as follows：Sunlight penetrates high light transmission
The organic glass insulating layer 1 of rate is radiated at 3 surface of phase-changing energy storage material layer.Phase-changing energy storage material layer 3 can be effectively to sunlight
Capture absorption and be converted into thermal energy being stored.1 inner space of organic glass insulating layer is high vacuum state, it is possible thereby to
It realizes preferable heat insulation effect, avoids the loss of 3 heat of phase-changing energy storage material layer outwardly.As shown in figure 3, composite phase change energy-storing
Material has high absorbance.Can be seen that composite phase-change energy storage material by Fig. 4 and Fig. 5 results as a result, can realize that photo-thermal turns
It changes, while there is good setting performance.The high temperature face temperature of thermoelectric material layer 4 increases, and temperature difference is formed with low temperature face,
Thermoelectromotive force is generated in circuit, so as to export electric energy.When having no progeny between solar energy, due to storing the sun in phase-change accumulation energy layer 3
The thermal energy that can be converted to, therefore still working environment can be provided for thermoelectric material layer, make entire device continuous work.
Embodiment 2
Overall construction design is same as Example 1 with preparation method, the difference lies in：It is prepared in composite phase-change material
In, it is support setting material to select the high density polyethylene (HDPE) that mass fraction is 20%, and 1% black dyes is promoting light absorption
Degree, 79% paraffin is as phase-change material.High density polyethylene (HDPE) is melted at 160 DEG C, then dyestuff is added in and paraffin is mixed
It closes, passes through compound acquisition composite shape-stabilized phase change energy storage material.
Using organic polymer PEDOT:PSS thermoelectric material bases thermoelectric generation film carries out heat to electricity conversion.
It should be understood that for those of ordinary skills, can be improved or converted according to the above description,
And all these modifications and variations should all belong to the protection domain of appended claims of the present invention.
Claims (7)
1. a kind of photo-thermal electricity switching memory devices, which is characterized in that including：Insulating layer (1), phase-changing energy storage material layer (3), thermoelectricity
Material layer (4) and heat dissipating layer (5), lower part and thermoelectric material layer (4) upper surface of insulating layer (1) seal to form covering space (2),
Shape is vacuumized inside covering space (2), phase-changing energy storage material layer (3), phase-changing energy storage material layer (3) are accommodated in covering space (2)
Good heat conduction is formed with thermoelectric material layer (4) upper surface to connect, heat dissipating layer (5) forms good with thermoelectric material layer (4) lower surface
Good heat conduction connection, thermoelectric material layer (4) upper surface are high temperature face, and lower surface is low temperature face, and sunlight is irradiated through insulating layer
In phase-changing energy storage material layer, realize that the capture to sunlight absorbs, while be converted to thermal energy and carry out by phase-changing energy storage material layer
Storage, finally converts heat into electric energy by thermoelectric material layer；In the case where sunlight is interrupted, thermoelectric material layer can also
The output of electric energy is persistently carried out using the thermal energy stored inside phase-change material；The phase-changing energy storage material is stored up using fixed phase change
Energy material, preparation method are：Graphene oxide powder is scattered in by ultrasound and mechanical agitation means in deionized water, is obtained
Obtain the graphene oxide water solution of a concentration of 1mg/mL-30mg/mL；Directly it is freeze-dried, obtains three-dimensional macro stone
Black alkene material；Use three-dimensional macro graphene for support setting and light absorbing material, the polyethylene glycol that molecular weight is 10000 be phase
Change energy-storage material, the method adsorbed by vacuum impregnation immerse three-dimensional grapheme in polyethylene glycol melt in vacuum drying oven,
Composite shape-stabilized phase change energy storage material is prepared, graphene mass content is 0.5%-10%.
2. photo-thermal electricity switching memory devices according to claim 1, which is characterized in that the insulating layer uses transparent organic
Glass or unorganic glass.
3. photo-thermal electricity switching memory devices according to claim 1, which is characterized in that the thermoelectric material layer includes inorganic
Material bismuth telluride-base thermoelectric generation film or organic polymer PEDOT:PSS thermoelectric material base thermoelectric generation films.
4. photo-thermal electricity switching memory devices according to claim 1, which is characterized in that the heat dissipating layer is including material
Copper, steel, aluminium, iron, alloy, radiating mode for natural heat dissipation, air blast cooling, Forced water cooling cooling fin.
5. according to the preparation method of any photo-thermal electricity switching memory devices of claim 1-4, which is characterized in that step is such as
Under：
Step 1：Support setting material and promotion absorbance material and phase-change material is mutually compound, and preparation can realize photo-thermal
The setting phase change energy storage material of conversion；
Step 2：Setting phase change energy storage material lower surface is fitted in the high temperature face of thermoelectric generation film by thermal interfacial material；
Step 3：By the use of transparent organic or inorganic glass as insulating layer, phase-change material is covered, and covering space is made to be formed very
Dummy status；
Step 4：Heat dissipating layer by the low temperature face of thermal interfacial material and thermoelectric generation film is fitted, that is, obtains the photo-thermal electricity
Switching memory devices.
6. preparation method according to claim 5, which is characterized in that the setting phase change energy storage material preparation method is：
Graphene oxide powder is scattered in by ultrasound and mechanical agitation means in deionized water, obtains a concentration of 1mg/mL-30mg/
The graphene oxide water solution of mL；Directly it is freeze-dried, obtains three-dimensional macro grapheme material；Using three-dimensional macro
Graphene is phase-changing energy storage material for support setting and light absorbing material, the polyethylene glycol that molecular weight is 10000, passes through Vaccum Permeating
The method of stain absorption, three-dimensional grapheme is immersed in polyethylene glycol melt, prepare composite shape-setting phase-change accumulation energy in vacuum drying oven
Material, graphene mass content are 0.5%-10%.
7. preparation method according to claim 5, which is characterized in that the setting phase change energy storage material selects mass fraction
Prepared by high density polyethylene (HDPE), 1% black dyes, 79% paraffin for 20%, paraffin is as phase-change material, high density polyethylene (HDPE)
Support setting material, to promote absorbance, preparation method is black dyes：High density polyethylene (HDPE) is melted at 160 DEG C,
Then it adds in dyestuff and paraffin is mixed, pass through compound acquisition composite shape-stabilized phase change energy storage material.
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