CN108400192A - A method of improving photovoltaic efficiency - Google Patents
A method of improving photovoltaic efficiency Download PDFInfo
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- CN108400192A CN108400192A CN201810404178.0A CN201810404178A CN108400192A CN 108400192 A CN108400192 A CN 108400192A CN 201810404178 A CN201810404178 A CN 201810404178A CN 108400192 A CN108400192 A CN 108400192A
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- energy storage
- storage material
- inorganic nano
- phase change
- nano phase
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- 238000000034 method Methods 0.000 title claims abstract description 11
- 238000004146 energy storage Methods 0.000 claims abstract description 71
- 239000011232 storage material Substances 0.000 claims abstract description 71
- 239000000463 material Substances 0.000 claims abstract description 37
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 15
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 claims abstract description 15
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000005286 illumination Methods 0.000 claims abstract description 7
- 239000005038 ethylene vinyl acetate Substances 0.000 claims description 18
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 claims description 18
- 239000002033 PVDF binder Substances 0.000 claims description 7
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 230000009466 transformation Effects 0.000 claims description 5
- 238000005516 engineering process Methods 0.000 abstract description 3
- 230000007704 transition Effects 0.000 description 12
- 238000009825 accumulation Methods 0.000 description 8
- 230000005611 electricity Effects 0.000 description 8
- 238000010521 absorption reaction Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000010248 power generation Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 241000209094 Oryza Species 0.000 description 2
- 235000007164 Oryza sativa Nutrition 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 235000009566 rice Nutrition 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000005619 thermoelectricity Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Abstract
The invention discloses a kind of methods improving photovoltaic efficiency, are related to solar energy generation technology field, the present invention includes the following steps：1) one layer of Inorganic nano phase change energy storage material layer is set at the back side of solar panel plane of illumination；2) one layer of bismuth telluride thermoelectric material layer is set again in the one side of Inorganic nano phase change energy storage material layer, the present invention has the advantages that easy to operate, applicability is wide, generating efficiency is high.
Description
Technical field
The present invention relates to solar energy generation technology fields, more particularly to a kind of side for improving photovoltaic efficiency
Method.
Background technology
Solar panel is made of one or more solar battery sheets becomes solar panel.Solar cell
It is with a kind of semiconductor devices for converting light into electrical characteristics, it can convert the solar radiation for being radiated at its surface
At direct current, solar panel is the most basic component and solar energy power generating system in photovoltaic generating system/product
Core in system.Its maximum effect is to convert solar energy into electrical energy to be stored in accumulator.Solar panel can
It is divided into crystal silicon cell plate, amorphous silicon battery plate, chemical dye solar panel.
It reduces with the raising of temperature by the open-circuit voltage of the solar photovoltaic cell panel of material of crystalline silicon, is sold from market
In a kind of technical parameter property list for the solar panel sold it can be seen that, its voltage temperature coefficient be -0.33%/DEG C,
I.e. temperature often increases 1 DEG C, and the output voltage of every battery will decline 0.33%, the monomer solar cell open circuit electricity of 60 components
Low 120~the 125mv of pressure drop, the peak power of solar cell reduce with the raising of temperature and (directly influence efficiency), i.e., warm
Degree often increases 1 DEG C, and the peak power loss late of solar cell is about 0.41%.Such as：It is operated in 20 DEG C of the polysilicon sun
Can battery, output power is opposite than being operated in 70 DEG C high by about 20%, if somewhere light resources supplIes are general, so
And average temperature of the whole year is relatively low, then the generating efficiency of power station entirety can also greatly promote.It can thus be seen that temperature is to photovoltaic module
The influence in even entire power station be can not ignore, in the operation of practical solar power station, according to the different geographical in China, in summer
The actual measurement back temperature of solar cell module is up to 40 to 70 degrees Celsius, then peak power can then substantially reduce at this time.The sun
When energy solar panel works in the sun, the radiant heat that sunlight generates on solar panel makes the temperature of solar panel increase, heat
Amount is mainly distributed by the heat transfer of air to space, due to the heat carrier that air has not been, solar panel under sunlight
Temperature will rise it is very high, to reduce generating efficiency.
Therefore above-mentioned technical problem how is solved, there is very much realistic meaning to those skilled in the art.
Invention content
It is an object of the invention to：It is the heat by air to solve the heat that existing solar photovoltaic cell panel generates
It passes guide space and distributes the plate temperature that causes to generate electricity and increase, the technical issues of to reduce generating efficiency, the present invention provides one kind and carries
The method of high photovoltaic efficiency.
The present invention specifically uses following technical scheme to achieve the goals above：
A method of photovoltaic efficiency is improved, is included the following steps：
1) one layer of Inorganic nano phase change energy storage material layer is set at the back side of solar panel plane of illumination；
2) one layer of bismuth telluride thermoelectric material layer is set again in the one side of Inorganic nano phase change energy storage material layer.
Further, the Inorganic nano phase change energy storage material layer thickness is 5mm-20mm.
Further, the solar panel includes sequentially connected glassy layer, EVA glue-lines A, crystal silicon layer, EVA
Glue-line B and backboard, backboard are connect with Inorganic nano phase change energy storage material layer.
Further, the backboard includes the PEVA material layers to link together and PVDF material layers, PEVA material layers
It is connect with EVA glue-lines B, PVDF material layers are connect with Inorganic nano phase change energy storage material layer.
Beneficial effects of the present invention are as follows：
1, high performance Inorganic nano phase change energy storage material and bismuth telluride thermoelectric material are in turn mounted to the sun by the present invention
Can solar panel plane of illumination the back side, using Inorganic nano phase change energy storage material phase-change accumulation energy when the characteristic that is basically unchanged of temperature,
To absorb the heat generated when solar panel photovoltaic generation so that the temperature of solar panel is protected in following period of time
It holds constant, and lower temperature is maintained at, to improve the generating efficiency of solar panel, while in inorganic nano phase transformation
The one side of energy storage material covers one layer of bismuth telluride thermoelectric material again, bismuth telluride thermoelectric material be it is a kind of using pyroelectric effect by thermal energy
The semi-conductor thermoelectric material for the green non-pollution directly converted with electric energy, Inorganic nano phase change energy storage material are close on one side
The back side for solar panel constantly introduces the heat of solar panel in Inorganic nano phase change energy storage material, nothing
The temperature of machine nano phase change energy storage material can be gradually increased to phase transition temperature, then be maintained in phase transition temperature.Work as outside air temperature
Less than Inorganic nano phase change energy storage material phase transition temperature when, the bismuth telluride thermoelectricity that is covered in Inorganic nano phase change energy storage material
Temperature difference between material use Inorganic nano phase change energy storage material and air proceeds by thermo-electric generation, can be one through measuring and calculating
The electricity of the multiple 10%-15% of solar panel energy of unit area, substantially increases generating efficiency in a summer.
2 at the same the phase transition temperature of inorganic nano energy storage material can adjust, not due to southern china and the weather in the north
Together, the temperature of solar panel increases also different, can adjust its phase transformation by changing inorganic nano energy storage material structure
Temperature makes the efficiency highest of inorganic nano energy storage material thermo-electric generation when reaching phase transition temperature.
3, Inorganic nano phase change energy storage material layer thickness is 5mm-20mm, and the thickness of Inorganic nano phase change energy storage material layer is determined
Determine Inorganic nano phase change energy storage material absorb heat number, Inorganic nano phase change energy storage material layer thickness is bigger, inorganic nano
Phase-changing energy storage material absorption heat is more, different according to the weather of diverse geographic location, passes through and inorganic nano phase-change accumulation energy is arranged
The thickness of material layer, to adjust the heat absorption amount of Inorganic nano phase change energy storage material, applicability is wider.
Description of the drawings
Fig. 1 is the combining structure schematic diagram of solar panel.
Reference numeral：1- solar panels, 1.1- glassy layers, 1.2-EVA glue-lines A, 1.3- crystal silicon layer, 1.4-EVA
Glue-line B, 1.5- backboard, 1.5.1-PEVA material layers, 1.5.2-PVDF material layers, 2- Inorganic nano phase change energy storage material layers, 3-
Bismuth telluride thermoelectric material layer.
Specific implementation mode
In order to which those skilled in the art are better understood from the present invention, below in conjunction with the accompanying drawings with following embodiment to the present invention
It is described in further detail.
Embodiment 1
As shown in Figure 1, the present embodiment provides a kind of method improving photovoltaic efficiency, include the following steps：
1) one layer of Inorganic nano phase change energy storage material layer (2) is set at the back side of solar panel (1) plane of illumination；
2) one layer of bismuth telluride thermoelectric material layer (3) is set again in the one side of Inorganic nano phase change energy storage material layer (2).
In the present embodiment, high performance Inorganic nano phase change energy storage material and bismuth telluride thermoelectric material are in turn mounted to too
It is positive can solar panel plane of illumination the back side, using Inorganic nano phase change energy storage material phase-change accumulation energy when the spy that is basically unchanged of temperature
Property, to absorb the heat generated when solar panel photovoltaic generation so that the temperature of solar panel is in a period of time
In remain unchanged, and lower temperature is maintained at, to improve the generating efficiency of solar panel, while in inorganic nano
The one side of phase-changing energy storage material covers one layer of bismuth telluride thermoelectric material again, and bismuth telluride thermoelectric material is a kind of use pyroelectric effect general
The semi-conductor thermoelectric material for the green non-pollution that thermal energy and electric energy are directly converted, the one side of Inorganic nano phase change energy storage material
It is close to the back side of solar panel, the heat of solar panel is constantly introduced into Inorganic nano phase change energy storage material
Interior, the temperature of Inorganic nano phase change energy storage material can be gradually increased to phase transition temperature, then be maintained in phase transition temperature.Work as the external world
When temperature is less than the phase transition temperature of Inorganic nano phase change energy storage material, the bismuth telluride that is covered in Inorganic nano phase change energy storage material
Thermoelectric material proceeds by thermo-electric generation using the temperature difference between Inorganic nano phase change energy storage material and air, can be with through measuring and calculating
The electricity of the multiple 10%-15% of solar panel energy of unit area, substantially increases generating efficiency, together in a summer
When inorganic nano energy storage material phase transition temperature can adjust, due to southern china with the north weather it is different, solar power generation
The temperature of plate increases also difference, can adjust its phase transition temperature by changing inorganic nano energy storage material structure, make inorganic receive
The efficiency highest of rice energy storage material thermo-electric generation when reaching phase transition temperature.
Embodiment 2
As shown in Figure 1, the present embodiment is further optimized on the basis of embodiment 1, specifically, described is inorganic
2 thickness of nano phase change energy storage material layer is 5mm-20mm.
In the present embodiment, the thickness of Inorganic nano phase change energy storage material layer determines that Inorganic nano phase change energy storage material absorbs heat
Amount number, Inorganic nano phase change energy storage material layer thickness is bigger, Inorganic nano phase change energy storage material absorb heat it is more, according to
The weather of diverse geographic location is different, by the way that the thickness of Inorganic nano phase change energy storage material layer is arranged, to adjust inorganic nano phase
The heat absorption amount of change energy-storage material, applicability is wider, and the thickness of Inorganic nano phase change energy storage material layer depends on：(1) summer
Season locality the highest temperature；(2) heat enthalpy value of the energy storage material of unit mass；(3) between at 10 points in the local morning at 4 points in afternoon
Intensity of illumination.
Embodiment 3
As shown in Figure 1, the present embodiment is further optimized on the basis of embodiment 1, and specifically, the sun
Energy solar panel 1 includes sequentially connected glassy layer 1.1, EVA glue-lines A1.2, crystal silicon layer 1.3, EVA glue-lines B1.4 and backboard
1.5, backboard 1.5 is connect with phase-change accumulation energy layer 2, and backboard 1.5 includes PEVA material layer 1.5.1 and the PVDF materials to link together
Layer 1.5.2, PEVA material layers 1.5.1 connect with EVA glue-lines B1.4, PVDF material layers 1.5.2 and inorganic nano phase-change accumulation energy material
The bed of material 2 connects.
Operation principle：In three seasons of spring and summer autumn, between 9 points to 11 points of fine day, Solar panel backside temperature is just
It can gradually rise so that the temperature difference between backboard temperature and atmospheric temperature is gradually increased, the heat until backboard absorption and release
When equal to the heat in air, the temperature of backboard just will not continue to increase and reach balance.At this moment backboard temperature can be Celsius
Between 40 degree to 70 degree (north and southern difference), the generating efficiency of solar panel also from 20 degree when 100% gradually
Drop to efficiency and there was only 80%, and 12 noon is to before and after 2 points, exactly solar panel full power generates electricity the period, but at this time
It is solar cell plate temperature highest, whole day generating efficiency minimum period.Under the conditions of southern climates, summer afternoon solar energy
The temperature of solar panel can be increased to 70 degrees Celsius, the Inorganic nano phase change energy storage material using phase transition temperature at 40 degrees Celsius, sun
When the temperature of solar panel increases under light, constantly heat is passed to Inorganic nano phase change energy storage material, is received when inorganic
When the temperature of rice phase-changing energy storage material is increased to 40 degrees Celsius, Inorganic nano phase change energy storage material enters the state of phase-change accumulation energy,
At this time Inorganic nano phase change energy storage material largely absorb solar panel be conducted through the heat come and temperature to be maintained at 40 Celsius
Degree no longer rises.After solar panel backboard is plus Inorganic nano phase change energy storage material and bismuth telluride thermoelectric material, noon is too
The efficiency of positive energy solar panel full power power generation at least improves 10%.
After at 4 points in afternoon, temperature is begun to decline, due to the phase-change accumulation energy principle of Inorganic nano phase change energy storage material, the sun
Energy panel backside temperature can also be maintained at 40 degree, that is to say, that after at 4 points in afternoon, not use Inorganic nano phase change energy storage material
The temperature of solar panel can be than using the temperature of the solar panel of Inorganic nano phase change energy storage material low, power generation effect
Rate is high, but the radiation intensity of the sun substantially reduces after 4 points, and the generated output of solar panel has descended to the period at noon
50% hereinafter, at this time temperature increase efficiency (using after Inorganic nano phase change energy storage material) decline and the generated energy that loses, far
It is improved and increased generated energy far below period at noon (full power power generation at this time) efficiency.
On the other hand, after at 4 points in afternoon, when mercury dropped is less than 40 degrees Celsius, it is covered in inorganic nano phase-change accumulation energy material
Bismuth telluride thermoelectric material on material starts to generate electricity under the action of the temperature difference, the efficiency 20% of photovoltaic generation, remaining 80% luminous energy
A part is launched, and also more than half is converted into thermal energy.By designing the characteristic of Inorganic nano phase change energy storage material, can make
The major part for obtaining these thermal energy is stored in Inorganic nano phase change energy storage material, and as the sun sets, mercury dropped is more, and nothing
The temperature of machine nano phase change energy storage material since Transformation Principle is also maintained at 40 degrees Celsius, the efficiency of thermo-electric generation also gradually on
It rises, as the energy stored in Inorganic nano phase change energy storage material gradually discharges, thermo-electric generation is just continuing, when inorganic nano phase
The energy that phase transformation stores in change energy-storage material releases, and the temperature of Inorganic nano phase change energy storage material, which declines, to be accelerated, and design is passed through
The temperature of Inorganic nano phase change energy storage material can be made to be changed to as temperature before daybreak, restart within second day a hair
Electricity cycle.
Using heating of staggering the time, maximum temperature cooling stores heat and thermo-electric generation, through measuring and calculating can in a summer it is single
The electricity of the multiple 10%-15% of solar panel energy of plane product.
The above, only presently preferred embodiments of the present invention, are not intended to limit the invention, patent protection model of the invention
It encloses and is subject to claims, equivalent structure variation made by every specification and accompanying drawing content with the present invention, similarly
It should be included within the scope of the present invention.
Claims (4)
1. a kind of method improving photovoltaic efficiency, which is characterized in that include the following steps：
1) one layer of Inorganic nano phase change energy storage material layer (2) is set at the back side of solar panel (1) plane of illumination；
2) one layer of bismuth telluride thermoelectric material layer (3) is set again in the one side of Inorganic nano phase change energy storage material layer (2).
2. the method according to claim 1 for improving photovoltaic efficiency, which is characterized in that the inorganic nano phase transformation
Energy storage material layer (2) thickness is 5mm-20mm.
3. the method according to claim 1 for improving photovoltaic efficiency, which is characterized in that the solar panel
(1) include sequentially connected glassy layer (1.1), EVA glue-lines A (1.2), crystal silicon layer (1.3), EVA glue-lines B (1.4) and backboard
(1.5), backboard (1.5) is connect with Inorganic nano phase change energy storage material layer (2).
4. the method according to claim 3 for improving photovoltaic efficiency, which is characterized in that backboard (1.5) packet
Include the PEVA material layers (1.5.1) to link together and PVDF material layers (1.5.2), PEVA material layers (1.5.1) and EVA glue-lines
B (1.4) connections, PVDF material layers (1.5.2) are connect with Inorganic nano phase change energy storage material layer (2).
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| CN201810404178.0A CN108400192A (en) | 2018-04-28 | 2018-04-28 | A method of improving photovoltaic efficiency |
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| Publication Number | Publication Date |
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Family
ID=63100822
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109524496A (en) * | 2018-11-22 | 2019-03-26 | 北京临近空间飞行器系统工程研究所 | A kind of full-time solar battery based on energy storage thermo-electric generation |
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