CN108807655B - Photoelectric conversion device and method for manufacturing same - Google Patents
Photoelectric conversion device and method for manufacturing same Download PDFInfo
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- CN108807655B CN108807655B CN201810468471.3A CN201810468471A CN108807655B CN 108807655 B CN108807655 B CN 108807655B CN 201810468471 A CN201810468471 A CN 201810468471A CN 108807655 B CN108807655 B CN 108807655B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/853—Thermoelectric active materials comprising inorganic compositions comprising arsenic, antimony or bismuth
Abstract
The invention provides a photo-thermal-electric conversion device and a method of manufacturing the same. The photothermal-electric conversion device includes a first electrode and a second electrode; a photothermal unit formed of a photothermal material in the form of nanostructures on the surface of the first electrode; a substrate layer formed of an insulating material; and a thermoelectric unit formed of a thermoelectric material between the first electrode and the substrate layer; the second electrode is in electrical contact with the thermoelectric unit.
Description
Technical Field
The present disclosure relates to a photothermal-electric conversion device and a method of manufacturing the photothermal-electric conversion device.
Background
The environment has abundant heat energy, and how to effectively and efficiently collect the heat energy in the environment is a hot point of attention. Currently, an effective way to collect thermal energy is a thermoelectric generator. Thermoelectric generators are based on the seebeck effect to convert thermal energy in the environment into electrical energy. However, the generator requires a large temperature difference between two ends of the device electrode in the use process. However, the situation that a large temperature difference naturally exists in the environment is not many, and the wide application of the generators is greatly limited unless the temperature difference is artificially manufactured.
Disclosure of Invention
The invention provides a photothermal-to-electric conversion device having improved photothermal-to-electric conversion efficiency and a method of manufacturing the photothermal-to-electric conversion device.
Additional aspects will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the embodiments provided.
According to an aspect of the present invention, a photothermal-electric conversion device includes:
a first electrode and a second electrode;
a photothermal unit formed on the surface of the first electrode;
a substrate layer formed of an insulating material;
and a thermoelectric unit formed of a thermoelectric material between the first electrode and the substrate layer;
the photothermal unit has photothermal material in the form of nanostructures, and the second electrode is in electrical contact with the thermoelectric unit.
In the photothermal-electric conversion device, the photothermal material absorbs light, raising the temperature of the photothermal unit above room temperature. The first electrode temperature increases while the second electrode remains at room temperature, creating a temperature gradient, i.e., there is a significant temperature difference between the two electrodes, thereby creating the Seebeck effect (Seebeck effect).
The seebeck effect, also called the first thermoelectric effect, refers to the thermoelectric phenomenon in which the voltage difference between two substances is caused by the temperature difference between two different electrical conductors or semiconductors. The thermoelectric potential direction is generally specified as: the current flows from negative to positive at the hot side. In a circuit formed by the photothermal-electric conversion device, the first electrode and the second electrode have different temperatures, and a thermal current occurs in the circuit, the direction of which depends on the direction of the temperature gradient. The hot-side current carriers in the thermoelectric unit are diffused to the cold side to form current, and the current carriers are accumulated at the hot side and the cold side to form potential difference. The invention utilizes the working mechanism to realize effective thermoelectric output of the thermoelectric unit through light irradiation, thereby realizing light-heat-electricity conversion.
The projections of the first electrode and the second electrode on the substrate layer are not overlapped. Because the first electrode and the second electrode are closer when the projections of the first electrode and the second electrode on the substrate layer are overlapped, the heat of the two electrodes is mutually transferred, and an effective temperature gradient is difficult to form. Therefore, the projections of the first electrode and the second electrode on the substrate layer do not overlap, and the temperature gradient reduction caused by the heat transfer from the first electrode to the second electrode can be avoided.
In one embodiment, the photothermal unit comprises molybdenum disulfide, carbon nanotubes, graphene, gold nanomaterials, or copper sulfide.
In one embodiment, the thermoelectric unit includes: a composite material formed by mixing a semiconductor thermoelectric material in the form of nanostructures and a polymer thermoelectric material.
In one embodiment, the semiconductor thermoelectric material comprises Te and Bi2Te3、SbTe3PbTe, BiSbTe or BiSbTe.
In an embodiment, the second electrode is located between the thermoelectric element and the substrate layer. Like this thermoelectric unit can cover more first electrode and light and heat unit on the surface, is favorable to increasing the photic area that light and heat unit received the illumination, improves the degree of integrating of device.
In one embodiment, the photothermal unit is a high molecular polymer including molybdenum disulfide, and the weight percentage of molybdenum disulfide in the high molecular polymer is 0.5% -3%.
According to another aspect of the present invention, a method of manufacturing a photo-thermal conversion device includes: forming a photothermal material having a form of a nanostructure on a surface of the first electrode; forming a thermoelectric material between the first electrode and the insulating substrate layer; the thermoelectric unit is electrically contacted with the second electrode; the projections of the first electrode and the second electrode on the substrate layer are not overlapped.
In an embodiment, the second electrode is located between the thermoelectric element and the substrate layer.
In one embodiment, the photo-thermal unit is formed by mixing conductive plasma with photo-thermal material, and the photo-thermal material comprises molybdenum disulfide, carbon nanotubes, graphene, gold nano-material or copper sulfide.
In one embodiment, the thermoelectric unit includes: a composite material formed by mixing a semiconductor thermoelectric material in the form of nanostructures and a polymer thermoelectric material.
The photothermal-electric conversion device of the present invention can operate the thermoelectric unit by light to obtain effective thermoelectric output, thereby realizing light-heat-electricity conversion. In addition, the projections of the first electrode and the second electrode on the substrate layer are not overlapped, so that the temperature gradient reduction caused by the heat transfer from the first electrode to the second electrode can be avoided. In addition, the surface of the thermoelectric unit is covered by more first electrodes and the photothermal unit, so that the light receiving area of the photothermal unit for receiving light is increased, and the integration degree of the device is improved.
Drawings
The above and/or other aspects will become apparent and more readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
fig. 1 is a schematic view of a structure of a photothermal-to-electrical conversion device according to an embodiment of the present invention;
FIG. 2 is an optical diagram of a photothermal unit of the photothermal conversion device of the present invention;
FIG. 3 is a graph showing temperature rise in a photothermal conversion process of a photothermal unit of the photothermal conversion device of the present invention;
fig. 4A to 4D are thermoelectric voltage and thermoelectric current diagrams of the dominant photo-thermoelectric conversion device of the present invention;
FIG. 5 is a pictorial view of a photothermal-electric conversion device of the present invention;
fig. 6 is a schematic structural view of a photothermal-to-electrical conversion device according to another embodiment of the present invention.
Detailed Description
Exemplary embodiments will now be described more fully with reference to the accompanying drawings, in which like reference numerals refer to like elements.
The first embodiment is as follows:
fig. 1 is a schematic view of a structure of a photothermal-to-electric conversion device according to an embodiment of the present invention.
Referring to fig. 1, the photothermal-electric conversion device includes a first electrode 10, a second electrode 20, a photothermal unit 30 formed on an upper surface of the first electrode, an insulating support substrate 50, and a thermoelectric unit 40 formed between the first electrode, the second electrode, and the insulating support substrate. The photothermal-electric conversion device is a means for converting light energy into thermal energy and then converting the thermal energy into electric energy, and includes a photothermal unit 30 for realizing photothermal conversion and a thermoelectric unit 40 for realizing thermoelectric conversion.
As shown in fig. 1, the projections of the first electrode 10 and the second electrode 20 on the substrate layer 50 do not overlap. Since the first electrode 10 and the second electrode 20 are closer to each other when the projections of the first electrode 10 and the second electrode 20 on the substrate layer 50 overlap, the heat of the first electrode 10 and the second electrode 20 is transferred to each other, and it is difficult to form an effective temperature gradient. Therefore, the projections of the first electrode 10 and the second electrode 20 on the substrate layer 50 do not overlap, and the temperature gradient reduction caused by the heat transfer from the first electrode 10 to the second electrode 20 can be avoided.
The thermoelectric unit 40 is formed of a thermoelectric nanocomposite film in which a semiconductor thermoelectric material in the form of a nanostructure and a polymer thermoelectric material are mixed. The semiconductor thermoelectric material can be tellurium (Te) or Bi2Te3、SbTe3PbTe, BiSbTe and BiSbTe. The polymer thermoelectric material is PEDOT: PSS (PEDOT: PSS is poly (3, 4-ethylenedioxythiophene) -poly (styrenesulfonic acid)). The nanostructure may be a nanowire, a nanotube, a nanorod, a nanosheet, a nanopore, or a nanoparticle, but the embodiment is not limited thereto. The nanostructures have better thermoelectric properties than corresponding bulk structures. In particular, in the nanowire structure, i.e., the one-dimensional nanostructure, the thermoelectric material may achieve a low thermal conductivity due to scattering of phonons on the surface of the nanowire. The semiconductor in the form of nanostructures may be arranged in any direction in the conductive polymer, for example, the semiconductor in the form of nanostructures may be arranged regularly or irregularly in the conductive polymer, may be arranged in parallel with respect to the substrate, or may be arranged at an oblique angle with respect to the substrate.
The photothermal unit is formed by mixing a photothermal material in the form of nanostructures and an aqueous floor finish. The photo-thermal material may be molybdenum disulfide (MoS)2) Carbon nanotubes, graphene oxide, gold nanomaterials of different shapes or copper sulphide, the nanostructures may comprise nanoflowers, nanowires, nanotubes, nanorods, nanoplates, nanoporesOr nanoparticles, but the present embodiment is not limited thereto. The aqueous floor finish can be a polyurethane aqueous floor finish.
The first and second electrodes may each be a metallic material, such as Au, Ag, Cu, Al, Pt, or a combination or alloy thereof, and further, each may be a transparent and flexible conductive material, such as a conductive polymer, e.g., PEDOT: PSS, graphene, a conductive oxide, e.g., Indium Tin Oxide (ITO) and Indium Zinc Oxide (IZO), carbon nanotubes, or a mixture thereof. However, the present embodiment is not limited thereto. If the photothermal element includes a conductive material, the photothermal element may serve as an electrode instead of the first electrode. For example, if the photothermal unit includes graphene or PEDOT: PSS material, the first electrode may not be provided.
The insulating support substrate may be a flexible substrate, for example a plastic substrate such as PET and a fabric substrate; further, the insulating support substrate may be a non-flexible substrate, such as a glass substrate; however, the present embodiment is not limited thereto.
MoS2The two-dimensional nano material is a high-efficiency photo-thermal material, and the photo-thermal conversion efficiency is high. MoS2 has been studied as a photothermal material placed in vivo for cancer therapy by utilizing its infrared light absorbing property, i.e., MoS2Conversion of light to heat can be achieved, but currently to MoS2No relevant report is found on the research of the light-heat-electricity conversion medium. Fig. 2 is an optical diagram showing the photothermal unit shown in fig. 1. The photothermal unit may be a high molecular weight polymer comprising molybdenum disulfide, such as: from MoS2MoS formed by mixing with waterborne polyurethane2A PU film. PU is polyurethane, and the PU film is a polyurethane film. Referring to FIG. 2, MoS2In MoS2When the weight percentage of the polymer in the PU film is in the range of 0.5-3%, the polymer is modified with MoS2In MoS2Weight percent increase in the/PU film, MoS2MoS in PU2The particles are dispersed and filled more and more uniformly, and MoS2MoS in the film at 0.5%, 1%, 2%, 3% by weight2The particle size of the/PU particles was in agreement 10 μm, whereas the MoS2More than 3% by weight of the film has cracks, which affect the integrity of the film and its performance.
FIG. 3 isShowing a temperature rise curve of the photothermal conversion process of the photothermal unit 30 shown in FIG. 2, which illustrates that MoS is irradiated by infrared light with an optical power of 105mW and a wavelength of 808nm2MoS on surface of PU film2The relationship between the temperature and the illumination time of the PU film. Referring to FIG. 3, in MoS2In the range of 0.5-3% by weight, different MoS2MoS in% by weight (0.5%, 1%, 2%, 3%)2The final temperature of the/PU film can be raised to 336.9K, 338.3K, 339.7K and 342.7K, namely MoS2Temperature of PU film following MoS2Increase in weight percent; if infrared is irradiated only to the non-MoS2The temperature of the thermoelectric device surface of the PU film is obviously far lower than that of the surface of the thermoelectric device with MoS2The photothermal temperature of the photothermal-electric conversion device of the PU film. FIG. 3 shows that in this embodiment of the invention, 2% MoS by weight under the same lighting conditions2the/PU film can reach higher temperature and is more stable.
When the surface of the photo-thermal conversion device is irradiated with light, such as infrared light or sunlight, the photo-thermal unit absorbs light and generates heat, which causes the temperature of the photo-thermal unit to rise above room temperature, which increases the temperature of the first electrode 10, while the second electrode 20 is still kept at room temperature, i.e. there is a significant temperature difference between the two electrodes, which causes a significant temperature gradient in the thermoelectric unit 40. In addition, when the light applied to the photo-thermal conversion device is removed, the photo-thermal unit 30 may be dark so that the temperature of the first electrode 10 does not increase but slowly decreases to room temperature, so that there is no significant temperature difference between the first electrode 10 and the second electrode 20, i.e., there is no significant temperature gradient in the thermoelectric unit. Due to the thermoelectric property of the thermoelectric unit 40, when a temperature gradient exists inside the thermoelectric unit 40, a hot-side carrier in the thermoelectric unit 40 diffuses to a cold side to form a current based on the seebeck effect, and a potential difference, i.e., a thermoelectric voltage, is formed between the first electrode 10 and the second electrode 20 due to the accumulation of the carrier at the hot side and the cold side. As described above, the photothermal-electric conversion device can convert light energy into heat energy, and then convert the heat energy into electric energy.
Fig. 4A to 4D are thermoelectric voltage and thermoelectric current diagrams showing the photothermal-electric conversion device shown in fig. 1.
FIGS. 4A to 4D show the photo-thermalThe electric conversion device comprises a first electrode 10 and a second electrode 20 which are both Ag electrodes, a thermoelectric unit 40 which is a Te/PEDOT nano composite film, and a photo-thermal unit 30 which is MoS2the/PU film, insulating support substrate 50 is the thermoelectric output when PET is formed.
Fig. 4A illustrates a relation between a thermoelectric voltage and an irradiation time when the photothermal-electric conversion device is irradiated with infrared light having a wavelength of 808 nm. Referring to FIG. 4A, the maximum thermoelectric voltages at 200s of illumination under different optical powers (105mW, 92mW, 80mW) are 1.14mV,0.72mV, and 0.51mV, respectively. It is shown that the thermoelectric voltage of the photo-thermoelectric conversion device increases with an increase in the optical power.
Fig. 4B illustrates a relationship between a thermoelectric current and an illumination time when the photothermal-electric conversion device is irradiated with infrared light having a wavelength of 808 nm. Referring to FIG. 4A, the maximum thermoelectric currents corresponding to different optical powers (105mW, 92mW, 80mW) at 200s of illumination were 0.17 μ A,0.064 μ A, and 0.038 μ A, respectively. It is shown that the thermoelectric current of the photo-thermoelectric conversion device increases with an increase in the optical power.
Fig. 4C illustrates a relationship between a thermoelectric voltage and an illumination time when the photothermal-electric conversion device is irradiated with infrared light having a wavelength of 808nm and an optical power of 105 mW. Referring to FIG. 4C, the maximum thermoelectric voltages for different illumination times (30s, 50s, 100s, 150s, 200s) are 0.515m, 0.781mV, 0.996mV, 1.05mV, and 1.14mV, respectively. It is shown that the thermoelectric voltage of the photo-thermoelectric conversion device increases with the increase of the light irradiation time.
Fig. 4D illustrates a relationship between a thermoelectric current and an illumination time when the photothermal-electric conversion device is irradiated with infrared light having a wavelength of 808nm and an optical power of 105 mW. Referring to FIG. 4C, the maximum thermoelectric currents for different illumination times (30s, 50s, 100s, 150s, 200s) are 0.077 μ A, 0.126 μ A, 0.153 μ A, 0.170 μ A, 0.172 μ A, respectively. It is shown that the thermoelectric current of the photo-thermoelectric conversion device increases with the increase of the light irradiation time.
Fig. 4A to 4D show that when infrared light with a wavelength of 808nm is irradiated onto the surface of the photo-thermoelectric conversion device, an effective thermoelectric output can be obtained, and if the irradiation is canceled, the thermoelectric output gradually decreases to 0.
Fig. 4A to 4B show that when infrared light having a wavelength of 808nm is irradiated onto the surface of the photo-thermoelectric conversion device, increase in optical power can effectively increase the thermoelectric output in the range of 80mW to 105mW of optical power;
fig. 4C to 4D show that when infrared light having a wavelength of 808nm and an optical power of 105mW is irradiated onto the surface of the photothermal-electric conversion device, the irradiation time is in the range of 0s to 200s, and the increase in the irradiation time is effective for increasing the thermoelectric output, but eventually reaches a saturation state. It follows that the thermoelectric output of the photothermal-to-electric conversion device can be improved by adjusting the light power level and the light irradiation time.
Fig. 5 is an optical diagram showing the photothermal-electric conversion device shown in fig. 1, which is formed of Ag as the first electrode and the second electrode, Te/PEDOT nanocomposite film as the thermoelectric element, MoS2/PU film as the photothermal element, and PET as the insulating support substrate. Referring to fig. 5, the photothermal-electric conversion device may be bent without being damaged, i.e., may have flexibility. The light-heat-electricity conversion device can be adhered to a window to utilize sunlight.
Example two:
fig. 6 is a schematic view of a structure of a photothermal-to-electrical conversion device according to another embodiment of the present invention.
The photothermal-electric conversion device of the present embodiment differs from the photothermal-electric conversion device of fig. 1 in the position and number of electrodes, and the position and number of photothermal units.
Referring to fig. 6, the photothermal-electric conversion device includes: the thermoelectric unit 40 has a first electrode 10 formed above the thermoelectric unit 40, a second electrode 20 formed below the thermoelectric unit 40, a photothermal unit 30 formed above the first electrode 10, and an insulating support substrate 50 formed below the second electrode 20. However, the present embodiment is not limited thereto, and the first electrode 10 and the second electrode 20 may be arranged in plurality to cross above and below the thermoelectric unit 40, and the photothermal unit 30 is formed on the electrode located above the thermoelectric unit 40. The photothermal-electric conversion device is advantageous to increase the light receiving area of the photothermal unit 30 for receiving light.
A method of manufacturing a photo-thermal conversion device according to an embodiment of the present invention.
A thermoelectric unit 40 as shown in fig. 1 was prepared, and conductors were formed at both ends of the thermoelectric unit 40A first electrode 10 and a second electrode 20 formed of an electrical material. The electrode may be formed of a metal material such as silver (Ag), a conductive oxide, or a conductive polymer. The thermoelectric unit 40 is formed on the insulating support substrate 50 for convenience of manufacture. The insulating support substrate 50 may be plastic such as PET or fabric. The thermoelectric unit 40 is specifically manufactured as follows: the nanostructured semiconductor powder such as Te is added to a liquid composed of an organic solvent such as isopropyl alcohol and a conductive polymer such as PEDOT: PSS to form a mixed liquid, and the mixed liquid is coated on the insulating support substrate 50 and dried at room temperature. The photothermal unit 30 shown in fig. 1 is prepared, and for convenience of manufacture, the photothermal unit 30 is prepared on a substrate such as PET, and then its unit is peeled off and transferred over the first electrode 10. The photothermal unit 30 is specifically manufactured by using nano-structured photothermal material powder such as molybdenum disulfide (MoS)2) Adding the mixture into an aqueous polyurethane solution to form a mixed solution, coating the mixed solution on a substrate, and drying the substrate for 2 hours at 65 ℃.
It should be understood that the exemplary embodiments described herein should be considered in a descriptive sense only and not for purposes of limitation. Descriptions of features or aspects in various embodiments should typically be considered as available for other similar features or aspects in other embodiments.
Claims (8)
1. A photo-thermal electric conversion device characterized by comprising:
a first electrode and a second electrode;
a photothermal unit formed on the surface of the first electrode;
a substrate layer formed of an insulating material;
and a thermoelectric unit formed of a thermoelectric material between the first electrode and the substrate layer;
the photothermal unit has a photothermal material in the form of a nanostructure, and the second electrode is in electrical contact with the thermoelectric unit;
the projections of the first electrode and the second electrode on the substrate layer are not overlapped.
2. The photothermal-electric conversion device according to claim 1, wherein: the second electrode is positioned between the thermoelectric element and the substrate layer.
3. The photothermal-electric conversion device according to claim 1, wherein: the photo-thermal unit comprises molybdenum disulfide, a carbon nano tube, graphene, a gold nano material or copper sulfide.
4. The photothermal-electric conversion device according to claim 1, wherein: the photothermal unit is a high molecular polymer comprising molybdenum disulfide, and the weight percentage of the molybdenum disulfide in the high molecular polymer is 0.5% -3%.
5. The photothermal-electric conversion device according to claim 1, wherein: the thermoelectric unit includes: a composite material formed by mixing a semiconductor thermoelectric material in the form of nanostructures and a polymer thermoelectric material.
6. The photothermal-electric conversion device according to claim 5, wherein: the semiconductor thermoelectric material comprises Te and Bi2Te3、SbTe3PbTe or BiSbTe.
7. A method of manufacturing a photothermal-electric conversion device, characterized in that the method comprises:
forming a photothermal material having a form of a nanostructure on a surface of the first electrode;
forming a thermoelectric material between the first electrode and the insulating substrate layer;
the thermoelectric unit is electrically contacted with the second electrode;
the projections of the first electrode and the second electrode on the substrate layer are not overlapped.
8. The method of claim 7, wherein: the photo-thermal unit is formed by mixing conductive plasma and photo-thermal materials, and the photo-thermal materials comprise molybdenum disulfide, carbon nano tubes, graphene, gold nano materials or copper sulfide.
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| CN110289348B (en) * | 2019-04-24 | 2021-05-14 | 电子科技大学 | Printing ink printing type preparation method and structure of photo-assisted thermoelectric device |
| CN110635019B (en) * | 2019-09-20 | 2021-04-27 | 西南大学 | Photo-thermal-electric conversion device for improving light utilization efficiency |
| CN110687358B (en) * | 2019-10-14 | 2022-05-13 | 云南师范大学 | Capacitive electromagnetic wave detector and system based on thermoelectric material |
| CN112234136A (en) * | 2020-09-15 | 2021-01-15 | 武汉纺织大学 | High-efficiency fiber-based thermoelectric energy supply material and preparation method thereof |
| CN112341738A (en) * | 2020-10-23 | 2021-02-09 | 扬州工业职业技术学院 | 3D self-floating heat-insulation efficient photo-thermal steam conversion material and preparation method thereof |
| CN112563400B (en) * | 2021-02-20 | 2021-05-07 | 南京卓永创光电科技有限公司 | Photo-thermal detector based on platinum diselenide-bismuth telluride and preparation method thereof |
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| CN104868045A (en) * | 2014-02-21 | 2015-08-26 | 清华大学 | Photoelectric converter and application thereof |
| CN105633261A (en) * | 2016-01-04 | 2016-06-01 | 四川大学 | Photothermoelectric transform storage device and preparation method |
| CN106684237A (en) * | 2015-11-10 | 2017-05-17 | 北京卫星环境工程研究所 | Solar radiation power generation material gradual change structure for spaces and device and manufacturing method thereof |
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| CN104868045A (en) * | 2014-02-21 | 2015-08-26 | 清华大学 | Photoelectric converter and application thereof |
| CN106684237A (en) * | 2015-11-10 | 2017-05-17 | 北京卫星环境工程研究所 | Solar radiation power generation material gradual change structure for spaces and device and manufacturing method thereof |
| CN105633261A (en) * | 2016-01-04 | 2016-06-01 | 四川大学 | Photothermoelectric transform storage device and preparation method |
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