CN108365794B - Light thermoelectric conversion component and its manufacturing method - Google Patents
Light thermoelectric conversion component and its manufacturing method Download PDFInfo
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- CN108365794B CN108365794B CN201810122047.3A CN201810122047A CN108365794B CN 108365794 B CN108365794 B CN 108365794B CN 201810122047 A CN201810122047 A CN 201810122047A CN 108365794 B CN108365794 B CN 108365794B
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 49
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
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- 238000000034 method Methods 0.000 claims abstract description 10
- 239000011810 insulating material Substances 0.000 claims abstract description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 25
- 239000002086 nanomaterial Substances 0.000 claims description 18
- 229910021389 graphene Inorganic materials 0.000 claims description 14
- 239000002002 slurry Substances 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 11
- 239000004020 conductor Substances 0.000 claims description 7
- 239000012528 membrane Substances 0.000 claims description 7
- 239000002131 composite material Substances 0.000 claims description 6
- 239000002041 carbon nanotube Substances 0.000 claims description 5
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910002899 Bi2Te3 Inorganic materials 0.000 claims description 3
- 229910002665 PbTe Inorganic materials 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 3
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 claims description 3
- OMZSGWSJDCOLKM-UHFFFAOYSA-N copper(II) sulfide Chemical compound [S-2].[Cu+2] OMZSGWSJDCOLKM-UHFFFAOYSA-N 0.000 claims description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- 229910052982 molybdenum disulfide Inorganic materials 0.000 description 11
- 230000005619 thermoelectricity Effects 0.000 description 11
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 9
- 230000005611 electricity Effects 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910052961 molybdenite Inorganic materials 0.000 description 6
- 230000005678 Seebeck effect Effects 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 239000002322 conducting polymer Substances 0.000 description 5
- 229920001940 conductive polymer Polymers 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 239000002070 nanowire Substances 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- GKWLILHTTGWKLQ-UHFFFAOYSA-N 2,3-dihydrothieno[3,4-b][1,4]dioxine Chemical compound O1CCOC2=CSC=C21 GKWLILHTTGWKLQ-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000002105 nanoparticle Substances 0.000 description 3
- 239000002071 nanotube Substances 0.000 description 3
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 229910000906 Bronze Inorganic materials 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000010974 bronze Substances 0.000 description 2
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000002114 nanocomposite Substances 0.000 description 2
- 239000002057 nanoflower Substances 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000010930 yellow gold Substances 0.000 description 2
- 229910001097 yellow gold Inorganic materials 0.000 description 2
- 206010028980 Neoplasm Diseases 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- 229920002472 Starch Polymers 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
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- 230000008033 biological extinction Effects 0.000 description 1
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- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002510 pyrogen Substances 0.000 description 1
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- 235000009566 rice Nutrition 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 235000019698 starch Nutrition 0.000 description 1
- 239000008107 starch Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000004073 vulcanization Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S10/00—PV power plants; Combinations of PV energy systems with other systems for the generation of electric power
- H02S10/30—Thermophotovoltaic systems
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The present invention provides light thermoelectric conversion component and its manufacturing method.The light thermoelectric conversion component includes substrate layer, photo-thermal unit and the electrode that insulating materials is formed；And the thermoelectric unit formed between photo-thermal unit and the substrate layer by thermoelectric material；Electrode is in electrical contact with thermoelectric unit；The photo-thermal unit is conductive.The method of the manufacture light thermoelectric conversion component includes that the thermoelectric unit formed by thermoelectric material is formed between conductive photo-thermal unit and dielectric substrate layers；The thermoelectric unit and electrode are in electrical contact.
Description
Technical field
The method that the content of present invention is related to light thermoelectric conversion component and manufactures the light thermoelectric conversion component.
Background technique
There is thermal energy abundant, the thermal energy how effectively and efficiently to collect in environment is heat concerned by people in environment
Point.Currently, the effective way for collecting thermal energy is thermoelectric generator.Thermoelectric generator is based on Seebeck effect by the heat in environment
Electric energy can be converted to.But such generator needs component electrode both ends in use that there are the biggish temperature difference.But ring
The scene of the larger temperature difference of naturally occurring and few in border, except the non-artificial this temperature difference of manufacture, this just significantly limits such
The extensive use of generator.
Summary of the invention
The present invention, which provides, to be had the light thermoelectric conversion component for improving photo-thermal photoelectric transformation efficiency and manufactures the photo-thermal electricity conversion group
The method of part.
In addition aspect will be partly articulated in the description that follows, and partly will be from apparent, the Huo Zheke of the description
Known by the practice of provided embodiment.
According to an aspect of the present invention, light thermoelectric conversion component includes: the substrate layer that insulating materials is formed；With conduction
The photo-thermal unit of property；The thermoelectric unit formed between the photo-thermal unit and the substrate layer by thermoelectric material；And electrode；
The electrode and the thermoelectric unit are in electrical contact；Photo-thermal unit and electrode are not overlapped in the projection of substrate layer.
In the light thermoelectric conversion component, optothermal material, which absorbs light, rises photo-thermal cell temperature, and temperature is higher than room temperature.
And electrode remains at room temperature, i.e., there are the obvious temperature difference between photo-thermal unit and electrode, generate temperature gradient, thus generate Seebeck
Effect (Seebeck effect).
Seebeck effect is also referred to as the first pyroelectric effect, refers to the temperature difference due to two kinds of different electric conductors or semiconductor
And cause the pyroelectric phenomena of the voltage difference between two kinds of substances.General provision thermoelectrical potential direction are as follows: electric current is flowed to just by negative in hot end.
In the circuit of photo-thermal power conversion device composition, photo-thermal unit is different with the temperature of electrode, then will occur thermoelectricity in the loop
Stream, direction depend on the direction of temperature gradient.Hot end carrier diffusion in the thermoelectric unit forms electric current to cold end, by
It is accumulated in carrier in hot end and cold end, forms potential difference.The present invention utilizes above-mentioned working mechanism, makes thermoelectricity list by light irradiation
Member realizes effective thermoelectricity output, and then realizes the conversion of optical and thermal-electricity.
Difficult since if photo-thermal unit and electrode are close in the projection overlapping time hot cell of substrate layer and the distance of electrode
To form effective temperature gradient.Therefore photo-thermal unit and electrode are not overlapped in the projection of substrate layer, can be to avoid by photo-thermal list
Temperature gradient reduces caused by member transfers heat to electrode.
The photo-thermal unit is the composite membrane for including optothermal material and conductive material.Such photo-thermal unit can be made simultaneously
For the electrode of light thermoelectric conversion component.The optothermal material can be molybdenum disulfide, carbon nanotube, graphene oxide, gold or sulphur
Change copper.In one embodiment, the photo-thermal unit be include molybdenum disulfide, carbon nanotube, graphene, gold nano-material or vulcanization
The optothermal material that the electrocondution slurry of copper is formed.The conductive material includes carbon or metal.Further, the electrocondution slurry further includes
Carbon slurry or metal paste.In one embodiment, carbon slurry can be graphite conductor；Metal paste can be bronze, silver powder, copper powder
Or yellow gold.Further, the photo-thermal unit is the composite membrane for including molybdenum disulfide and graphene.
In one embodiment, the thermoelectric unit includes: the semi-conductor thermoelectric material by nanostructure form and polymerization
The composite material that object thermoelectric material is mixed to form.The nanostructure can be nano flower, nano wire, nanotube, nanometer rods, receive
Rice piece, nano-pore or nano particle.In one embodiment, the semi-conductor thermoelectric material includes Te, Bi2Te3、SbTe3、PbTe、
BiSbTe or BiSbTe.
In one embodiment, the electrode is infrared light reflecting material.Infrared light reflecting material can be silver, aluminium, copper etc.,
The material can be non-absorbing by infrared reflection, can prevent electrode and thermoelectric unit from heating up and reducing itself and photo-thermal list in this way
The temperature difference between member, and then promote optical and thermal-electricity transfer efficiency.
According to another aspect of the present invention, the method for manufacturing light thermoelectric conversion component, this method comprises: conductive
Photo-thermal unit and dielectric substrate layers between form the thermoelectric unit that is formed by thermoelectric material；The thermoelectric unit and electrode are electrical
Contact；The photo-thermal unit is not be overlapped in the projection of substrate layer with electrode.
In one embodiment, the photo-thermal unit is mixed to form by optothermal material and electrocondution slurry.
In one embodiment, the thermoelectric unit includes: the semi-conductor thermoelectric material by nanostructure form and polymerization
The composite material that object thermoelectric material is mixed to form.
Photo-thermal power conversion device of the invention can make thermoelectric unit work obtain effective thermoelectricity output by light,
And then realize the conversion of optical and thermal-electricity.In addition, photo-thermal unit is not be overlapped in the projection of substrate layer with electrode, it can be to avoid by photo-thermal
Temperature gradient reduces caused by unit transfers heat to electrode.In addition, also help on thermoelectric unit surface covering compared with
More electrodes and photo-thermal unit improves the integration degree of device in favor of increasing the light-receiving area that photo-thermal unit receives illumination.
Detailed description of the invention
The following description for the embodiment being considered in conjunction with the accompanying, above and/or other aspects will be apparent and be easier
Understand, in the accompanying drawings:
Fig. 1 be according to embodiments of the present invention one to embodiment three light thermoelectric conversion component structural schematic diagram；
Fig. 2 is the photo-thermal unit of light thermoelectric conversion component in the embodiment of the present invention two and the thermograph of electrode；
Fig. 3 A and Fig. 3 B are the thermoelectric current figures that the embodiment of the present invention two can show light thermoelectric conversion component.
Specific embodiment
Illustrative embodiments are more fully described now with reference to attached drawing, identical appended drawing reference indicates identical member
Part.
Embodiment one:
Fig. 1 is light thermoelectric conversion component structural schematic diagram according to embodiment of the present invention.Referring to Fig.1, photo-thermal
Electric transition components include photo-thermal unit 10, electrode 30, insulating supporting substrate 40 and photo-thermal unit 10, electrode 30 and insulation
The thermoelectric unit 20 formed between support substrate 40.The light thermoelectric conversion component be for luminous energy to be changed into thermal energy, then will be hot
The transition components of electric energy can be changed into, and including the photo-thermal unit for realizing photothermal conversion and for realizing heat to electricity conversion
Thermoelectric unit.
As shown in Figure 1, the projection of photo-thermal unit 10 and electrode 30 on insulating supporting substrate 40 is not overlapped.
Because if photo-thermal unit 10 and electrode 30 are overlapped time hot cell 10 and electricity in the projection of insulating supporting substrate 40
The distance of pole 30 is close, leads to the transmitting of heat, it is difficult to form effective temperature gradient.Therefore photo-thermal unit 10 and electrode 30 exist
The projection of insulating supporting substrate 40 is not overlapped, and can transfer heat to temperature caused by electrode 30 to avoid by photo-thermal unit 10
Gradient reduces.
Thermoelectric unit 20 is shape by semi-conductor thermoelectric material and polymer the thermoelectric material mixing of nanostructure form
At thermoelectricity nano composite membrane formed.Semi-conductor thermoelectric material can be tellurium (Te), Bi2Te3、SbTe3、PbTe、BiSbTe、
BiSbTe, the polymer thermoelectric material are poly- (3,4- Ethylenedioxy Thiophene)-poly- (styrene sulfonic acid).Nanostructure can be
Nano wire, nanotube, nanometer rods, nanometer sheet, nano-pore or nano particle, but present embodiment is not limited only to this.Nanostructure
Body has thermoelectricity capability more preferable than corresponding body structure.Particularly, in nanowire structures, that is, one-dimensional nano structure, due to
Phonon is scattered in nanowire surface, and thermoelectric material is caused to can reach lower thermal coefficient.The semiconductor of nanostructure types can
It is arranged in conducting polymer along any direction, such as the semiconductor of nanostructure form can be regularly or irregularly arranged in
It in conducting polymer, can be arranged in parallel, can also be arranged by certain tilt angle relative to substrate relative to substrate.
Photo-thermal unit 10 is formed by the optothermal material and electrocondution slurry of nanostructure form.Optothermal material can be two
Molybdenum sulfide (MoS2), carbon nanotube, graphene oxide, gold nano-material of different shapes or copper sulfide, nanostructure can wrap
Nano flower, nano wire, nanotube, nanometer rods, nanometer sheet, nano-pore or nano particle are included, but present embodiment is not limited only to this.
Electrocondution slurry can starch (graphite conductor) for carbon, metal paste (bronze, silver powder, copper powder, yellow gold), and modified ceramic slurry
Material, but present embodiment is without being limited thereto.
Electrode 30 can be metal material, such as Au, Ag, Cu, Al, Pt, or combinations thereof or alloy, in addition, electrode 30 can be
Conductive material transparent and flexible, such as conducting polymer for example poly- (3,4- Ethylenedioxy Thiophene)-poly- (styrene sulfonic acid), stone
Black alkene, conductive oxide such as tin indium oxide (ITO) and indium zinc oxide (IZO), carbon nanotube, or mixtures thereof formed.But this reality
It is without being limited thereto to apply mode.
Insulating supporting substrate 40 can be flexible substrate, such as plastic supporting base such as PET and fabric substrate；In addition, insulating supporting
Substrate 40 can be non-flexible substrate, such as glass substrate；But present embodiment is without being limited thereto.
Embodiment two:
The light thermoelectric conversion component for preparing Fig. 1 structure, using MoS2Two-dimension nano materials are as optothermal material.MoS2Two dimension
Nano material is a kind of efficient optothermal material, and photothermal conversion efficiency is high.Have and utilizes MoS2The characteristic for absorbing infrared light, by it
Research use for cancer treatment, i.e. MoS in organism are placed in as optothermal material2The conversion of light to heat may be implemented, but at present
To MoS2Research as photo-thermal electricity conversion medium has no relevant report.Fig. 2 is 10 He of photo-thermal unit of light thermoelectric conversion component
The thermograph of electrode 30.The photo-thermal unit 10 is the MoS that molybdenum disulfide and graphene slurry are mixed to form2/ graphene film,
The electrode is Ag electrode.With reference to Fig. 2, as the Infrared irradiation MoS that optical power is 100mW, wavelength is 808nm2/ graphene film
When surface, surface temperature can reach 64 DEG C；The infrared light is not irradiated to MoS2When/graphene membrane surface, surface temperature dimension
It holds at 24 DEG C of room temperature；When the Infrared irradiation is to Ag electrode surface, surface temperature can reach 33 DEG C；The infrared light does not irradiate
When to Ag electrode surface, surface temperature maintains 24 DEG C of room temperature.If Fig. 2 shows infrared to be only irradiated to no MoS2/ graphene
The thermoelectric conversion component surface of film, then the temperature has obviously been far below MoS2The light thermoelectric conversion component of/graphene film it is photic
Hot temperature, and if without infrared radiation to MoS2/ graphene membrane surface, then without obvious photic thermal effect.
Light thermoelectric conversion component surface is subjected to illumination, such as when infrared light, sunlight, 10 extinction pyrogenicity of photo-thermal unit,
Cause the temperature of itself to rise, be higher than room temperature, this increases photo-thermal cell temperature, and electrode 30 stills remain in i.e. two electricity of room temperature
Interpolar makes in thermoelectric unit 20 that there are apparent temperature gradients there are the obvious temperature difference.In addition, being applied to light heat to electricity conversion when removing
When illumination on component, 10 no light of photo-thermal unit is absorbable, and 10 temperature of photo-thermal unit does not increase is slowly drop down to room temperature instead,
Make between photo-thermal unit 10 and electrode 30 without in the obvious temperature difference i.e. thermoelectric unit 20 without apparent temperature gradient.Due to thermoelectric unit 20
Thermoelectric property be based on Seebeck effect there are when temperature gradient inside thermoelectric unit 20, the hot end in thermoelectric unit 20 carries
Stream can diffuse to cold end and form electric current, since carrier is accumulated in hot end and cold end, photo-thermal unit 10 and electrode 30 it
Between formed potential difference, that is, thermoelectric voltage.As described above, light thermoelectric conversion component can convert light energy into thermal energy, then thermal energy is converted
For electric energy.
Fig. 3 A and Fig. 3 B are the thermoelectric current figures for showing light thermoelectric conversion component.Fig. 3 A and Fig. 3 B are shown when photo-thermal electricity
(photo-thermal unit is MoS to transition components2/ graphene film, electrode are Ag electrode, and thermoelectric unit is Te/PEDOT nano composite membrane, absolutely
The thermoelectricity output that edge support substrate is formed for PET).It is 808nm and optical power that Fig. 3 A explanation, which works as light thermoelectric conversion component by wavelength,
For 100mW Infrared irradiation when thermoelectric current and light application time relationship.With reference to Fig. 3 A, light application time is corresponding when being 60s
Electric current output is 0.23nA.Fig. 3 B illustrates when light thermoelectric conversion component is by the infrared light that wavelength is 808nm and optical power is 100mW
The relationship of thermoelectric current and light application time when irradiation.With reference to Fig. 4 A, when light application time is 60s corresponding electric current output for-
0.33nA。
Fig. 3 A and Fig. 3 B show wavelength is 808nm and optical power is 100mW Infrared irradiation to light thermoelectric conversion component
Surface and the DC current output for having opposite direction when light thermoelectric conversion component forward and reverse accesses circuit, that is, show component
Effective thermoelectricity output can be obtained, if cancelling illumination, thermoelectricity output can gradually decrease down 0.Fig. 3 A and Fig. 3 B show wavelength
For 808nm and when Infrared irradiation that optical power is 100mW is to light thermoelectric conversion component surface, the increase of light application time can have
Effect increases thermoelectricity output, but may eventually reach saturation state.
It can be found that it can be defeated come the thermoelectricity for improving light thermoelectric conversion component by adjusting light application time by above-mentioned experiment
Out.
Embodiment three:
The method of embodiment according to the present invention manufacture light thermoelectric conversion component prepares thermoelectric unit as shown in Figure 1
20, and the photo-thermal unit 10 and electrode 30 formed by optothermal material and electrocondution slurry is formed at 20 both ends of thermoelectric unit.Electrode 30
It can be formed for metal material such as silver-colored (Ag), conductive oxide or conducting polymer.Silver electrode is infrared light reflecting material.Infrared ray
Reflecting material is also possible to silver, aluminium, copper etc., which can be non-absorbing by infrared reflection, can prevent in this way electrode and
Thermoelectric unit heats up and reduces its temperature difference between photo-thermal unit, and then promotes optical and thermal-electricity transfer efficiency.
In order to easily manufactured, thermoelectric unit 20 is directly formed on insulating supporting substrate 40.Insulating supporting substrate 40 is modeling
Material such as PET or fabric.The specific manufacturing method of thermoelectric unit is as follows: nanostructure semiconductor powder such as Te is added to organic solvent such as
Mixing is formed in the liquid of isopropanol and conducting polymer such as poly- (3,4- Ethylenedioxy Thiophene)-poly- (styrene sulfonic acid) composition
Liquid, then the mixed liquor is coated on insulating supporting substrate, and is dried at room temperature for.
Photo-thermal unit as shown in Figure 1 is prepared, in order to easily manufactured, photo-thermal unit 10 is directly prepared on thermoelectric unit.
The specific manufacturing method of photo-thermal unit 10 is as follows: nanostructure optothermal material powder such as molybdenum disulfide (MoS2) it is added to graphene slurry
Mixed liquor is formed in material, then the mixed liquor is coated on thermoelectric unit, and in 60 DEG C of dry 4h.
It should be understood that illustrative embodiments described herein should consider in the sense of description only and be not used in limitation
Purpose.The description of features or aspect in various embodiments should be typically considered to can be used in other embodiments its
Its similar features or aspects.
Claims (8)
1. smooth thermoelectric conversion component, characterized by comprising:
The substrate layer that insulating materials is formed；
Conductive photo-thermal unit；
The thermoelectric unit formed between the photo-thermal unit and the substrate layer by thermoelectric material；
And electrode；
The electrode and the thermoelectric unit are in electrical contact；
The photo-thermal unit and the electrode are not overlapped in the projection of substrate layer.
2. smooth thermoelectric conversion component according to claim 1, it is characterised in that: the photo-thermal unit be include optothermal material
With the composite membrane of conductive material.
3. smooth thermoelectric conversion component according to claim 2, it is characterised in that: the optothermal material be include curing
Molybdenum, carbon nanotube, graphene, gold nano-material or copper sulfide material.
4. smooth thermoelectric conversion component according to claim 1, it is characterised in that: the thermoelectric unit includes: by nano junction
The composite material that the semi-conductor thermoelectric material and polymer thermoelectric material of structure body form are mixed to form.
5. smooth thermoelectric conversion component according to claim 4, it is characterised in that: the semi-conductor thermoelectric material include Te,
Bi2Te3、SbTe3, PbTe, BiSbTe or BiSbTe.
6. smooth thermoelectric conversion component according to claim 1, it is characterised in that: the electrode is infrared light reflecting material.
7. the method for manufacturing light thermoelectric conversion component, which is characterized in that this method comprises:
The thermoelectric unit formed by thermoelectric material is formed between conductive photo-thermal unit and dielectric substrate layers；The heat
Electric unit is in electrical contact with electrode；The photo-thermal unit is not be overlapped in the projection of substrate layer with electrode.
8. according to the method described in claim 7, it is characterized by: the photo-thermal unit is mixed by optothermal material and electrocondution slurry
It is formed.
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| CN110289348B (en) * | 2019-04-24 | 2021-05-14 | 电子科技大学 | Printing ink printing type preparation method and structure of photo-assisted thermoelectric device |
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| CN103391025A (en) * | 2012-05-09 | 2013-11-13 | 中国人民解放军军械工程学院 | Multi-physical-field nanometer generator |
| CN104868045A (en) * | 2014-02-21 | 2015-08-26 | 清华大学 | Photoelectric converter and application thereof |
| CN108400748A (en) * | 2018-03-14 | 2018-08-14 | 东南大学 | Micro-nano generator based on nano thin-film rectangle idol array and nanometric PN junctions |
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