CN105633234A - Gallium nitride-based semiconductor growth substrate and fabrication method thereof - Google Patents
Gallium nitride-based semiconductor growth substrate and fabrication method thereof Download PDFInfo
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- CN105633234A CN105633234A CN201610122812.2A CN201610122812A CN105633234A CN 105633234 A CN105633234 A CN 105633234A CN 201610122812 A CN201610122812 A CN 201610122812A CN 105633234 A CN105633234 A CN 105633234A
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- 239000000758 substrate Substances 0.000 title claims abstract description 83
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 60
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 45
- 239000004065 semiconductor Substances 0.000 title claims abstract description 34
- 238000000034 method Methods 0.000 title claims description 22
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000463 material Substances 0.000 claims abstract description 34
- 238000006243 chemical reaction Methods 0.000 claims abstract description 21
- 229910052751 metal Inorganic materials 0.000 claims abstract description 19
- 239000002184 metal Substances 0.000 claims abstract description 19
- 150000004767 nitrides Chemical class 0.000 claims abstract description 6
- 229910003460 diamond Inorganic materials 0.000 claims description 17
- 239000010432 diamond Substances 0.000 claims description 17
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical group [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 11
- 229910017083 AlN Inorganic materials 0.000 claims description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 9
- 239000010936 titanium Substances 0.000 claims description 9
- 229910052719 titanium Inorganic materials 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 8
- 229910052738 indium Inorganic materials 0.000 claims description 8
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 8
- 150000002500 ions Chemical class 0.000 claims description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 238000007747 plating Methods 0.000 claims description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical group [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 6
- 239000010959 steel Substances 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 239000010937 tungsten Substances 0.000 claims description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical group [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 229910000976 Electrical steel Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 17
- 239000013078 crystal Substances 0.000 abstract 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 2
- 229910052799 carbon Inorganic materials 0.000 abstract 2
- 238000007733 ion plating Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 229910000831 Steel Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 210000002706 plastid Anatomy 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention provides a gallium nitride-based semiconductor growth substrate, which comprises a substrate, a crystal lattice buffer layer and a crystal lattice conversion layer, wherein the crystal lattice buffer layer is formed on quartz glass and comprises a diamond-like carbon (Diamond-like Carbon, DLC for short) film; the crystal lattice conversion layer is formed on the crystal lattice buffer layer and is in a polycrystalline structure; and the crystal lattice coefficient is between GaN and DCL. By combination of DCL and nitride, the problems that crystal lattice mismatch, thermal mismatch and the like of ordinary substrates of a quartz glass substrate or a metal substrate and the like for growth of a gallium nitride-based semiconductor material are solved, so that the cost of an existing gallium nitride-based semiconductor growth substrate is reduced; and meanwhile, the quality of subsequently grown gallium nitride-based semiconductor material is improved.
Description
Technical field
The invention belongs to field of semiconductor materials, it is specifically related to a kind of gallium nitride-based semiconductor growth substrates and making method thereof.
Background technology
Gallium nitride-based semiconductor material is that application and preparation is in the key foundation material of semiconductor lighting and the luminescent device in display backlight field. Owing to lacking same plastid monocrystal material, the device application of GaN base material carries out usually in foreign substrate, and that the most frequently used is sapphire (Al2O3) substrate, due to Sapphire Substrate do not conduct electricity, hardness is big, price is higher, and the lattice of the GaN that grows up on sapphire is not criticized and is joined up to 13.6%, it is easy to cause lattice imperfection so that after growing up, the luminous efficiency of luminescent device reduces. Silicon carbide (SiC) substrate compares sapphire and gan has better lattice match relation, but it is expensive, and the GaN base luminescent device technique on it is that indivedual major company grasps, and therefore more difficult widespread commercialization is promoted.
Summary of the invention
For the problems referred to above that existing gallium nitride-based semiconductor growth substrates exists, the present invention provides a kind of gallium nitride-based semiconductor growth substrates and making method thereof.
According to an aspect of the present invention, it provides a kind of combined type gallium nitride-based semiconductor growth substrates, it comprises: a substrate; One buffer layer lattice, is formed on substrate, and it is made up of class diamond film (Diamond-LikeCarbon is called for short DLC); One lattice conversion layer, is formed on buffer layer lattice, and its lattice coefficient is between GaN and class diamond film.
In a preferred embodiment of the invention, silica glass selected by described substrate; The thickness of described buffer layer lattice is 1 ~ 10000nm, and its material is selected from Si-DLC film, C-DLC film, Ni-DLC or titanium carbide-DLC; The material of described lattice conversion layer is nitride, can be selected from aluminium nitride, aluminium gallium nitride alloy, gan, indium gallium nitride, nitrogenize indium or aluminum indium gallium nitride, and its thickness is 10 ~ 10000nm.
In another preferred embodiment of the invention, metal substrate selected by described substrate, can be selected from tungsten carbide-base plate, tungsten substrate, silicon carbide or steel substrate; Arranging a sub-Seed Layer between metal substrate and DLC buffer layer lattice, its material is selected from buffer layer lattice described in chromium, titanium or nickel and lattice conversion layer with reference to a front preferred embodiment.
According to an aspect of the present invention, it provides the making method of a kind of combined type gallium nitride-based semiconductor growth substrates, it comprises the steps: to provide a substrate; Form a class diamond film on the substrate, as buffer layer lattice; Forming a lattice conversion layer on described buffer layer lattice, its lattice coefficient, between GaN and class diamond film, forms and is combined into gan growth substrate.
In the preferred embodiment of this bright invention, described class diamond film passes through magnetic control sputtering plating method (magneticallysputteringmethod), ion vapour deposition method (ionplatingmethod), arc ions vapour deposition method (arcionplating), or plasma enhanced chemical vapor deposition method (plasma-enhancedchemicalvapordeposition) is formed on silica glass. The thickness of described buffer layer lattice is 1 ~ 10000nm, and its material is selected from Si-DLC film, C-DLC film, Ni-DLC or titanium carbide-DLC. The thickness of described lattice conversion layer is 10 ~ 10000nm, and its material is nitride, can select aluminium nitride, aluminium gallium nitride alloy, gan, indium gallium nitride, nitrogenize indium or aluminum indium gallium nitride.
The present invention uses class diamond film as buffer layer lattice, nitride (such as aluminium nitride) is as lattice conversion layer, common to silica glass or metal substrate etc. cheap substrate is become the growth substrates can grown up for gan, overcome silica glass or metal substrate does not mate for the lattice that growing gallium nitride base semiconductor material exists and the problem such as thermal mismatching, thus reduce the cost of existing gallium nitride-based semiconductor growth substrates, improve the quality of the gallium nitride-based semiconductor material of its subsequent growth simultaneously.
Other features and advantages of the present invention will be set forth in the following description, and, partly become apparent from specification sheets, or understand by implementing the present invention. The object of the present invention and other advantages realize by structure specifically noted in specification sheets, claim book and accompanying drawing and obtain.
Accompanying drawing explanation
Accompanying drawing is used to provide a further understanding of the present invention, and forms a part for specification sheets, together with embodiments of the present invention for explaining the present invention, is not construed as limiting the invention. In addition, accompanying drawing data describe summary, is not draw in proportion.
Fig. 1 is the structural representation of first embodiment of the invention.
Fig. 2 is the structural representation of second embodiment of the invention.
In figure, each label is:
100: silica glass; 110,210: buffer layer lattice; 120,220: lattice conversion layer; 130,230:GaN based material layer; 200: metal substrate; 240: Seed Layer.
Embodiment
Below with reference to drawings and Examples, embodiments of the present invention being described in detail, to the present invention, how utilisation technology means carry out technical solution problem whereby, and the process that realizes reaching technique effect can fully understand and implement according to this. It should be noted that, as long as not forming conflict, each embodiment in the present invention and each feature in each embodiment can be combined with each other, and the technical scheme formed is all within protection scope of the present invention.
Embodiment one:
As shown in Figure 1, GaN base material layer 130 is epitaxially grown in a kind of combined type gallium nitride-based semiconductor growth substrates based on silica glass. This combined type growth substrates comprises: silica glass 100, as the substrate of combined type growth substrates; Class diamond rete 110 is formed on silica glass so that as buffer layer lattice, its material can be Si-DLC film, C-DLC film, Ni-DLC or titanium carbide-DLC, and thickness is 1 ~ 10000nm; Lattice conversion layer 120 is formed on buffer layer lattice 110. The lattice coefficient of lattice conversion layer is between GaN and class diamond film, itself and gallium nitride-based semiconductor match materials, nitride (such as aluminium nitride, aluminium gallium nitride alloy, gan, indium gallium nitride, nitrogenize indium or aluminum indium gallium nitride) can be adopted, in the present embodiment, adopting aluminium nitride (AlN), thickness is 10 ~ 10000nm.
The preparation method of the aforementioned combined type gallium nitride-based semiconductor growth substrates based on silica glass, step is as follows:
First, it is provided that a silica glass 100.
Next step, form a class diamond film, as buffer layer lattice 110 on described silica glass. Magnetic control sputtering plating method (magneticallysputteringmethod), ion vapour deposition method (ionplatingmethod), arc ions vapour deposition method (arcionplating) can be adopted, or the method such as plasma enhanced chemical vapor deposition method (plasma-enhancedchemicalvapordeposition).
Next step, grow one layer of AlN on described buffer layer lattice 120, as lattice conversion layer 130, forms and is combined into gallium nitride-based semiconductor growth substrates.
In the present embodiment, employing has high rigidity, high elastic coefficient, low friction coefficient, the silica glass of wear-resistant and good vacuum tribological property is as substrate, steam the class diamond film (DLC) that plating one layer of thermal diffusivity is extremely good thereon, it is used as buffer layer lattice (crystalbufferlayer), while solving thermal mismatch problem, add structural strength and the hardness of silica glass, plate last layer AlN again, it is used as lattice conversion layer (crystaltranslationlayer), reduce the impact that lattice does not mate caused stress, make epitaxial wafer growth substrate platform MOCVD can on cheap silica glass growing GaN material, greatly reduce the cost of growth substrates. in addition, in material strain (strain), DLC layer is reversible elasticity distortion, and itself and AlN combine, and interfacial stress is very little, effectively improve the quality of the GaN base material of growth in compound substrate.
Embodiment two:
Mainly it is that the present embodiment adopts metal substrate as the substrate of combined type growth substrates with the difference of embodiment one, between metal substrate 200 and buffer layer lattice 210, increase by one layer of Seed Layer 240, it act as the use of brilliant substrate of heap of stone, and GaN base material can be grown up up smoothly by this Seed Layer.
As shown in Figure 2, GaN base material layer 230 is epitaxially grown in a kind of combined type gallium nitride-based semiconductor growth substrates based on metal substrate. This combined type growth substrates comprising: metal substrate 200, Seed Layer 240, the buffer layer lattice 210 being made up of class diamond film, lattice conversion layer 220.
The fusing point of metal substrate 200, preferably higher than 1000 DEG C, can select tungsten carbide-base plate, tungsten substrate, silicon carbide or steel substrate. Seed Layer 240 is positioned on metal substrate, and its material can select chromium, titanium or nickel. Brilliant network buffer layer 210 is positioned in Seed Layer 240, and material is selected from Si-DLC film, C-DLC film, Ni-DLC or titanium carbide-DLC. Lattice conversion layer 220 is positioned on buffer layer lattice 210, and its material is AlN.
The aforementioned combined type gallium nitride-based semiconductor growth substrates based on silica glass is prepared by step below.
First, it is provided that a steel substrate 200.
Next step, steam plating one layer of chromium as Seed Layer 240 on steel substrate 200.
Next step, form a class diamond film, on the seed layer as buffer layer lattice 210. Magnetic control sputtering plating method (magneticallysputteringmethod), ion vapour deposition method (ionplatingmethod), arc ions vapour deposition method (arcionplating) can be adopted, or the method such as plasma enhanced chemical vapor deposition method (plasma-enhancedchemicalvapordeposition).
Next step, grow one layer of AlN on described buffer layer lattice 220, as lattice conversion layer 230, forms and is combined into gallium nitride-based semiconductor growth substrates.
Layers of material is enumerated by embodiment above, it should be noted that, the selection of layers of material does not limit to this, as long as the material meeting this layer of characteristic should be all can be used for implementing the present invention.
Above embodiment is used for illustrative purposes only, but not limitation of the present invention, person skilled in the relevant technique, without departing from the spirit and scope of the present invention, it is also possible to make various conversion or change. Therefore, all equivalent technical schemes also should belong to the category of the present invention, should by each scope.
Claims (10)
1. gallium nitride-based semiconductor growth substrates, it comprises:
One metal substrate;
One buffer layer lattice, is formed on described metal substrate, and it is made up of class diamond film;
One lattice conversion layer, is formed at buffer layer lattice, and its lattice coefficient is between GaN and class diamond film.
2. gallium nitride-based semiconductor growth substrates according to claim 1, it is characterised in that: described metal substrate is selected from wolfram varbide substrate, tungsten substrate, silicon carbide or steel substrate.
3. gallium nitride-based semiconductor growth substrates according to claim 1, it is characterised in that: also comprising a Seed Layer, it is between substrate and buffer layer lattice.
4. gallium nitride-based semiconductor growth substrates according to claim, it is characterised in that: the material of described Seed Layer is selected from chromium, titanium or nickel.
5. gallium nitride-based semiconductor growth substrates according to claim 1, it is characterised in that: the material of described buffer layer lattice is selected from Si-DLC film, C-DLC film, Ni-DLC or titanium carbide-DLC.
6. gallium nitride-based semiconductor growth substrates according to claim 1, it is characterised in that: the material of described lattice conversion layer is nitride.
7. gallium nitride-based semiconductor growth substrates according to claim 6, it is characterised in that: the material of described lattice conversion layer is selected from aluminium nitride, aluminium gallium nitride alloy, gan, indium gallium nitride, nitrogenize indium or aluminum indium gallium nitride.
8. the making method of gallium nitride-based semiconductor growth substrates, it comprises the steps:
One metal substrate is provided;
Described metal substrate forms a class diamond film, as buffer layer lattice;
Forming a lattice conversion layer on described buffer layer lattice, its lattice coefficient, between GaN and class diamond film, forms gallium nitride base growing substrate.
9. the making method of gallium nitride-based semiconductor growth substrates according to claim 8, it is characterized in that: described class diamond film passes through magnetic control sputtering plating method, ion vapour deposition method, arc ions vapour deposition method, or plasma enhanced chemical vapor deposition method is formed on metal substrate.
10. the making method of gallium nitride-based semiconductor growth substrates according to claim 8, it is characterized in that: first on described metal substrate, form a Seed Layer, then the material forming buffer layer lattice in described Seed Layer is selected from Si-DLC film, C-DLC film, Ni-DLC or titanium carbide-DLC.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201210067966.8A CN102593294B (en) | 2012-03-15 | 2012-03-15 | Combined type gallium nitride-based semiconductor growth substrates and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110504229A (en) * | 2018-05-17 | 2019-11-26 | 深圳先进技术研究院 | A kind of highly heat-conductive material and its preparation method and application |
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| CN105633234A (en) * | 2012-03-15 | 2016-06-01 | 安徽三安光电有限公司 | Gallium nitride-based semiconductor growth substrate and fabrication method thereof |
| TW201446995A (en) * | 2013-06-13 | 2014-12-16 | Dong-Hau Kuo | A sputtering method for depositing p-type, GaN-based III-nitride semiconductor thin films |
| CN105023991B (en) * | 2014-04-30 | 2018-02-23 | 环视先进数字显示无锡有限公司 | A kind of manufacture method of the LED laminated circuit boards based on inorganic matter |
| CN104900773B (en) * | 2015-04-15 | 2017-09-19 | 安徽三安光电有限公司 | A kind of nitride light-emitting diode structure and preparation method thereof |
| TWI648876B (en) * | 2018-06-08 | 2019-01-21 | 進化光學有限公司 | Electronic apparatus, and light-emitting device and manufacturing method thereof |
| CN111430451B (en) * | 2020-03-31 | 2020-12-15 | 华厦半导体(深圳)有限公司 | Gallium nitride growth substrate and preparation method thereof |
| CN116247017B (en) * | 2023-02-06 | 2024-07-02 | 中国人民解放军国防科技大学 | Diamond substrate sp3-sp2Preparation method and application of hybrid bond network layer |
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| CN1692499A (en) * | 2002-12-04 | 2005-11-02 | 昂科公司 | Gallium nitride-based devices and manufacturing process |
| CN1993802A (en) * | 2004-05-13 | 2007-07-04 | 宋健民 | Semiconductor-on-diamond devices and methods of forming |
| CN101286487A (en) * | 2007-04-13 | 2008-10-15 | 日本冲信息株式会社 | Semiconductor device, led head and image forming apparatus |
| US20090169845A1 (en) * | 2007-12-28 | 2009-07-02 | Industrial Technology Research Institute | Structural material of diamond like carbon composite layers and method of manufacturing the same |
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| CN100487927C (en) * | 2004-10-26 | 2009-05-13 | 金芃 | Conductice and insulation quasi gallium nitride base growing substrate and its technology and process |
| CN101501873A (en) * | 2006-08-11 | 2009-08-05 | E.I.内穆尔杜邦公司 | LED device and back panel of liquid crystal display |
| US8187900B2 (en) * | 2007-08-10 | 2012-05-29 | Hong Kong Applied Science and Technology Research Institute Company Limited | Optimization of polishing stop design |
| CN101887942A (en) * | 2010-06-07 | 2010-11-17 | 江苏鑫钻新材料科技有限公司 | Metal baseplate provided with LED and manufacturing method thereof |
| CN105633234A (en) * | 2012-03-15 | 2016-06-01 | 安徽三安光电有限公司 | Gallium nitride-based semiconductor growth substrate and fabrication method thereof |
| CN202549913U (en) * | 2012-03-15 | 2012-11-21 | 安徽三安光电有限公司 | Growth substrate for composite gallium-nitride-based semiconductor |
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| CN1692499A (en) * | 2002-12-04 | 2005-11-02 | 昂科公司 | Gallium nitride-based devices and manufacturing process |
| CN1993802A (en) * | 2004-05-13 | 2007-07-04 | 宋健民 | Semiconductor-on-diamond devices and methods of forming |
| CN101286487A (en) * | 2007-04-13 | 2008-10-15 | 日本冲信息株式会社 | Semiconductor device, led head and image forming apparatus |
| US20090169845A1 (en) * | 2007-12-28 | 2009-07-02 | Industrial Technology Research Institute | Structural material of diamond like carbon composite layers and method of manufacturing the same |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110504229A (en) * | 2018-05-17 | 2019-11-26 | 深圳先进技术研究院 | A kind of highly heat-conductive material and its preparation method and application |
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| Publication number | Publication date |
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| CN102593294B (en) | 2016-08-03 |
| CN102593294A (en) | 2012-07-18 |
| WO2013135166A1 (en) | 2013-09-19 |
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