CN103137801A - Structure for forming epitaxial layers on diamond substrate and manufacturing method thereof - Google Patents
Structure for forming epitaxial layers on diamond substrate and manufacturing method thereof Download PDFInfo
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- CN103137801A CN103137801A CN2011103946577A CN201110394657A CN103137801A CN 103137801 A CN103137801 A CN 103137801A CN 2011103946577 A CN2011103946577 A CN 2011103946577A CN 201110394657 A CN201110394657 A CN 201110394657A CN 103137801 A CN103137801 A CN 103137801A
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Abstract
The invention provides a structure for forming epitaxial layers on a diamond substrate. The structure comprises the diamond substrate, a boundary layer formed on one side of the diamond substrate and provided with a polycrystal structure or a non-crystalline structure, a plurality of epitaxial layers formed on the boundary layer, and a plurality of electrodes. The plurality of epitaxial layers sequentially comprise buffering layers, n-type semiconductor layers, light emitting layers and p-type semiconductor layers, wherein the n-type semiconductor layers are partially exposed. The plurality of electrodes comprise n-type electrodes and p-type electrodes, the n-type electrodes contact the n-type semiconductor layers, and the p-type electrodes contact the p-type semiconductor layers. In addition, the invention further provides a manufacturing method of the structure for forming the epitaxial layers on the diamond substrate.
Description
Technical field
The present invention is about a kind of a plurality of stacked crystal layer structures, particularly about a kind of structure and method thereof of making epitaxial layer on Diamonal substrate.
Background technology
At present with nitride material prepared comprise the luminescence components such as light-emitting diode (Light Emitting Diode is called for short LED) or laser diode (Laser Diode is called for short LD), generally with sapphire (sapphire, Al
2O
3) build brilliant (Epitaxy) for substrate and grow up and establishment of component.With general processing procedure, that the alloy material that gallium nitride growth on sapphire substrate (GaN), aluminium nitride (AlN), indium nitride (InN) or aforementioned three compounds blend together forms resilient coating (Buffer Layer), as the substrate of follow-up luminescence component structure.
Yet, the sapphire coefficient of heat conduction extremely low (Low Thermal Conductivity), about 40W/mk only, the heat that this nitride light-emitting assembly can't be produced in the assembly operation process is got rid of rapidly, thereby affects the luminous efficiency of this nitride light-emitting assembly.In recent years, because the development of nitride light-emitting assembly is rapid, the luminosity of assembly improves, size increases, make the heat that produces in operating process increase, therefore, the problem that how to reduce the thermal losses luminous efficiency becomes an important key that increases luminescence component brightness and reliability (reliability).
For improving the problems referred to above, industry proposes to replace sapphire as the scheme of substrate with diamond, and proposes the processing procedure of various improvement for the processing procedure of Diamonal substrate, for example by the buckling deformation amount of carborundum protective layer with attenuating diamond rete.In addition, also can utilize monocrystalline silicon wafer crystal (Silicon, Si) face-centred cubic structure is as temporary base, and form Diamonal substrate thereon, the scheme that proposes comprises, for example: after monocrystalline silicon carbide (SiC) epitaxial layer of growing up, then form the monocrystalline diamond film layer of doped with boron atom (Boron, B) on monocrystalline silicon and monocrystalline GaAs (GaAs) substrate.For example, with silicon or diamond substrate (Base layer), based on silicon carbide and nitride semiconductor layer structure form the Diamonal substrate structure.For example, have one deck monocrystalline silicon carbide in monocrystalline silicon wafer crystal, more brilliant and doping formation one deck p-type electric-conducting diamond layer of heap of stone.For example, on the silicon substrate concave structure, form monocrystalline diamond crystal seed substrate.
In addition, the technology of also having powerful connections is bored carbon (Diamond-like Carbon with polycrystalline diamond film (Polycrystalline Diamond film) and class, DLC) be combined into insolated layer materials, replace sapphire hexagonal lattice structure as brilliant substrate of heap of stone, such as: the scheme such as monocrystalline silicon carbide structure sheaf of being combined as separator (insulating layer) or with doped with boron atom diamond conducting shell with class brill carbon with the polycrystalline diamond film is suggested.Other background technology also comprises, such as: the structure that the little channel architecture of diamond, class diamond film manufacturing method, diamond film and metal film coincide mutually etc.
Monocrystalline silicon face-centred cubic structure wafer has excellent capacity of heat transmission, but the diamond material that is not equal to carbon atom diamond cubic structure, diamond material is by carbon atom (Carbon, C) with the diamond cube formed solid of (Diamond cubic) crystal structure, its coefficient of heat conduction is about 900 to 2500W/mk, far above the sapphire coefficient of heat conduction (40W/mk).Because the wide energy gap of diamond material of carbon atom diamond cube is about 5.5 electron-volts, therefore can be low to moderate approximately 225 nanometers to the absorption spectrum ranges of light, the light that the nitride light-emitting assembly is sent can cause absorption loss hardly, is to have the baseplate material of potentiality on development large scale and high brightness luminescent assembly.
Yet carbon atom diamond cubic crystal structure forms the diamond material solid, and its crystal structure and lattice constant are all very big with nitride material difference.Said method is for building crystal to grow that carries out nitride material etc., the operating condition of processing procedure requires high, the monocrystalline stringent condition of required high temperature, condition of high vacuum degree of growing up for example, or for the cleanliness factor of monocrystalline silicon wafer crystal, surface roughness, lattice plane to etc. strict demand, make and possess diamond layer luminescence component, must process through complicated leading portion, high request process conditions and equipment cause at last that qualification rate is low, the high in cost of production shortcoming.Therefore, the art for diamond material as substrate, build method brilliant and that prepare luminescence component and still have demand.
Summary of the invention
In view of this, the present invention propose a kind of with nitride material with crystal type of heap of stone grow up structure and manufacture method thereof on Diamonal substrate, and the formed luminescence component of mode according to this, and the brightness of lifting subassembly and reliability.
An aspect of of the present present invention is about a kind of structure of a plurality of epitaxial layers that form on Diamonal substrate, comprising: Diamonal substrate; Boundary layer, it is formed on this Diamonal substrate one side, and this boundary layer has polycrystalline or non crystalline structure; A plurality of epitaxial layers form on this boundary layer, and these a plurality of epitaxial layers comprise successively resilient coating, N-shaped semiconductor layer, luminescent layer, reach the p-type semiconductor layer, and wherein, this N-shaped semiconductor layer is that part exposes; A plurality of electrodes, these a plurality of electrodes comprise N-shaped electrode and p-type electrode, and this N-shaped electrode contacts with this N-shaped semiconductor layer, and this p-type electrode contacts with the p-type semiconductor layer.By said structure, can form light-emitting diode.
According to embodiments of the invention, the thickness of this Diamonal substrate is about below 5000 microns.
According to embodiments of the invention, the thickness of this boundary layer is below about 500 nanometers, and this boundary layer is selected from nucleating layer or conversion layer.
According to embodiments of the invention, this nucleating layer is made of the aluminum indium nitride gallium (AlxInyGa1-x-yN, wherein 0≤x≤1,0≤y≤1,0≤x+y≤1) of single or multiple lift, and this nucleating layer thickness is about 5 to 500 nanometers.
According to embodiments of the invention, this conversion layer is by metal oxide, the non-metallic suicides (SizAn of film or nanostructure, Si represents element silicon, A represents nonmetalloid, z and n represent atomic ratio) or metal silicide (MkSiz, M represents metallic element, Si represents element silicon, k and z represent atomic ratio) consist of, wherein this metal oxide comprises zinc oxide, tin indium oxide, indium oxide or tin oxide etc., and this non-metallic suicides comprises silicon nitride, silica etc.
According to embodiments of the invention, this boundary layer is via being selected from physics or the chemical mode formation such as coating, crystalline substance of heap of stone, deposition, sputter, evaporation, plating or solion exchange bond.
Manufacture method of the present invention comprises: Diamonal substrate is provided; Form boundary layer in this Diamonal substrate one side, this boundary layer has polycrystalline or non crystalline structure; Form a plurality of epitaxial layers on this boundary layer, these a plurality of epitaxial layers comprise successively resilient coating, N-shaped semiconductor layer, luminescent layer, reach the p-type semiconductor layer; Carry out etch processes, with this N-shaped semiconductor layer of expose portion; And a plurality of electrodes are set, these a plurality of electrodes comprise N-shaped electrode and p-type electrode, and this N-shaped electrode contacts with this N-shaped semiconductor layer, and this p-type electrode contacts with the p-type semiconductor layer.
Utilize Diamonal substrate to make luminescence component, can promote the radiating efficiency of this luminescence component, and then increase brightness and the reliability of luminescence component, be applicable to make the semiconductor subassemblies such as laser diode, light-emitting diode.
Description of drawings
Fig. 1 to Fig. 4 illustrates one embodiment of the invention to make the schematic diagram of light-emitting diode on Diamonal substrate.
[primary clustering symbol description]
1 light-emitting diode
11 boundary layers
More than 12 epitaxial layer
The 12a resilient coating
12b N-shaped semiconductor layer
The 12c luminescent layer
12d p-type semiconductor layer
14n type electrode
16p type electrode
Embodiment
Referring to figs. 1 through Fig. 4, make the schematic diagram of light-emitting diode for illustrating one embodiment of the invention on Diamonal substrate.With reference to Fig. 1, at first Diamonal substrate 10 is provided, this Diamonal substrate 10 can be monocrystalline diamond film or polycrystalline diamond film, and preferably, the thickness of this Diamonal substrate 10 is below about 5000 microns (μ m).Upper surface at this Diamonal substrate 10 forms boundary layer 11, and this boundary layer 11 can be conversion layer or nucleating layer.
This boundary layer 11 can be conversion layer, the practice is that first upper surface at Diamonal substrate 10 forms conversion layer, this conversion layer can be single or multiple lift and forms, conversion layer is selected from physics or the chemical modes such as coating, evaporation, sputter, crystalline substance of heap of stone and deposition, by high temperature growth temperature, accelerate the formation volume minor structure, or low growth temperature forms membrane structure gradually, storehouse thickness layer by layer, being controlled at preferred thickness is below about 500 nanometers (nm).
And select the conversion layer material, can select the metal oxide high with Diamonal substrate 10 adherences (Metal oxide, M
xO
y, M represents metallic element, O represents oxygen element), for example but non-limiting: optional autoxidation zinc (ZnO), tin indium oxide (ITO), indium oxide (In
2O
3), and tin oxide (SnO
2) one or more materials.
And conversion layer is also by non-metallic suicides (Si
zA
n, Si represents element silicon, A represents nonmetalloid, z and n represent atomic ratio) consist of, for example, can be selected from silicon nitride (silicon nitride, Si
aN
bOr silicon rich nitride, (SRN)) and silica (silicon oxide, Si
cO
dOr siliconrich oxide, (SRO)) one or more materials consist of with the form of single thin film, plural layers or quantum structure.
But, by metal silicide (M
kSi
z, M represents metallic element, Si represents element silicon, k and z represent atomic ratio) and film or nanostructure consist of this conversion layer, also can be applicable to interface structure of the present invention.
This boundary layer 11 is with physics or chemical mode, coating method (for example but non-limiting) for example, be formed on the surface of Diamonal substrate 10, wherein boundary layer 11 has good adhesion for Diamonal substrate 10, the thickness of boundary layer 11 is preferably below about 500 nanometers, the characteristic that is beneficial to dispel the heat.
With conversion layer explanation boundary layer 11 structures, this conversion layer can be made of for example zinc oxide, with physics or chemical mode, coating method (for example but non-limiting) for example, be formed on this Diamonal substrate 10 surfaces, the zinc oxide that forms has the lattice structure of fibre (dimension) zinc ore structure (wurtzite structure), and it is respectively about in disalignment to the lattice constant on (axis)
Has lattice structure identical or that approach very much with the follow-up epitaxial layer that will form (being mainly nitride material).And the lattice constant of nitride material, for example gallium nitride is about
Both lattice constants are very approaching.Therefore, nitride material can be on the surface of the conversion layer that zinc oxide consists of building crystal to grow, mainly to depend on follow-up nitride stacked crystal layer structure, and the features such as zinc oxide conversion layer and Diamonal substrate adherence, growth temperature, film thickness will directly affect a plurality of stacked crystal layer structure 12 quality of materials and luminescence component brightness.
Be different from aforesaid conversion layer, with nucleating layer explanation boundary layer 11 structures, the material of this nucleating layer directly is selected from the nitride of triels.The purpose that this nucleating layer forms, be mainly the defect concentration that reduces between a plurality of stacked crystal layer structures 12 and Diamonal substrate 10, and with well attached characteristic, success links Diamonal substrate 10, the thickness of this nucleating layer is below about 500 nanometers of conversion layer preferred thickness, be made of individual layer, thickness is about 5 to 300 nanometers; Be made of plural layer, thickness can be about 5 to 300 nanometers, also can be about 300 to 500 nanometers.
This nucleating layer has non crystalline structure or polycrystalline structure, optionally is preferably selected from aluminum indium nitride gallium (Al from suitable nitride material
xIn
yGa
1-x-yN, 0≤x≤1,0≤y≤1 wherein, x+y≤1) one or more materials, this nucleating layer can via physics or chemical mode preparation, exchange the modes such as bond such as crystalline substance of heap of stone, deposition, sputter, evaporation, plating or solion.
Then, with reference to Fig. 2, form a plurality of epitaxial layers 12 at the upper surface of this boundary layer 11, successively brilliant resilient coating 12a, N-shaped semiconductor layer 12b, luminescent layer 12c, and the p-type semiconductor layer 12d of forming of heap of stone.the subsequent applications of these a plurality of epitaxial layer 12 visual these structures and changing, the material of these a plurality of epitaxial layers 12 can be selected from the nitride of triels, for example but non-limiting, for example with organometallic chemistry deposition (metal-organic chemical vapor deposition, MOCVD) technology forms aluminium nitride, gallium nitride, indium nitride, aluminium gallium nitride alloy, InGaN (InGaN), aluminum indium nitride gallium semi-conducting material, and in brilliant process of heap of stone, the 4th family (IV) element that adulterates forms the N-shaped doped semiconductor materials, or doping second family (II) element forms the p-type doping.
Proceed the following process processing procedure, with reference to Fig. 3 and Fig. 4, the formation of this light-emitting diode 1, can dry ecthing or wet etching process, expose portion N-shaped semiconductor layer 12b on the expose portion and this p-type semiconductor layer 12d of this N-shaped semiconductor layer 12b, arranges electrode 14,16 respectively.Particularly, this electrode 14,16 is respectively N-shaped electrode and p-type electrode.Thus, can complete light-emitting diode 1.
Utilize Diamonal substrate to make luminescence component, can promote the radiating efficiency of this luminescence component, and then brightness and the reliability of increase luminescence component, be applicable to make the semiconductor subassemblies such as laser diode, light-emitting diode, the content of above-mentioned specific embodiment is in order to describe the present invention in detail, yet this embodiment only is used for explanation, is not intended to limit the present invention.It will be understood by those skilled in the art that various variations or the modification carried out for the present invention fall into the present invention under the category that does not define departing from the appended claim book.
Claims (10)
1. the structure of a plurality of epitaxial layers that form on Diamonal substrate comprises:
Diamonal substrate;
Boundary layer, it is formed on this Diamonal substrate one side, and this boundary layer has polycrystalline or non crystalline structure;
A plurality of epitaxial layers, it forms on this boundary layer, and these a plurality of epitaxial layers comprise resilient coating, N-shaped semiconductor layer, luminescent layer and p-type semiconductor layer successively, and wherein, this N-shaped semiconductor layer is that part exposes;
A plurality of electrodes, these a plurality of electrodes comprise N-shaped electrode and p-type electrode, and this N-shaped electrode contacts with this N-shaped semiconductor layer, and this p-type electrode contacts with the p-type semiconductor layer.
2. structure as claimed in claim 1, wherein the thickness of this Diamonal substrate is about below 5000 microns.
3. structure as claimed in claim 1, wherein the thickness of this boundary layer is below about 500 nanometers.
4. structure as claimed in claim 1, wherein this boundary layer is selected from nucleating layer or conversion layer.
5. structure as claimed in claim 4, wherein this nucleating layer is by single or multiple lift aluminum indium nitride gallium (Al
xIn
yGa
1-x-yN, wherein 0≤x≤1,0≤y≤1,0≤x+y≤1) consist of.
6. structure as claimed in claim 5, wherein this nucleating layer thickness is about 5 to 500 nanometers.
7. structure as claimed in claim 4, wherein this conversion layer is by metal oxide, the non-metallic suicides (Si of film or nanostructure
zA
n, Si represents element silicon, A represents nonmetalloid, z and n represent atomic ratio) or metal silicide (M
kSi
z, M represents metallic element, Si represents element silicon, k and z represent atomic ratio) consist of, wherein this metal oxide comprises zinc oxide, tin indium oxide, indium oxide or tin oxide etc., this non-metallic suicides comprises silicon nitride, silica etc.
8. structure as claimed in claim 1, wherein this boundary layer is via being selected from physics or the chemical mode formation such as coating, crystalline substance of heap of stone, deposition, sputter, evaporation, plating or solion exchange bond.
9. method that forms a plurality of epitaxial layers on Diamonal substrate comprises:
Diamonal substrate is provided;
Form boundary layer in this Diamonal substrate one side, this boundary layer has polycrystalline or non crystalline structure;
Form a plurality of epitaxial layers on this boundary layer, these a plurality of epitaxial layers comprise resilient coating, N-shaped semiconductor layer, luminescent layer and p-type semiconductor layer successively;
Carry out etch processes, with this N-shaped semiconductor layer of expose portion; With
A plurality of electrodes are set, and these a plurality of electrodes comprise N-shaped electrode and p-type electrode, and this N-shaped electrode contacts with this N-shaped semiconductor layer, and this p-type electrode contacts with the p-type semiconductor layer.
10. method as claimed in claim 9, wherein this boundary layer is by metal oxide, the non-metallic suicides (Si of film or nanostructure
zA
n, Si represents element silicon, A represents nonmetalloid, z and n represent atomic ratio) or metal silicide (M
kSi
z, M represents metallic element, Si represents element silicon, k and z represent atomic ratio) consist of, wherein this metal oxide comprises zinc oxide, tin indium oxide, indium oxide or tin oxide etc., this non-metallic suicides comprises silicon nitride, silica etc.
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| CN105322007A (en) * | 2015-07-20 | 2016-02-10 | 苏州能讯高能半导体有限公司 | Diamond substrate based nitride structure, preparation method and semiconductor device |
| CN108767088A (en) * | 2017-06-30 | 2018-11-06 | 王晓靁 | Encapsulated substrate, method of manufacture and high energy gap device having the same |
| CN110785900A (en) * | 2017-06-19 | 2020-02-11 | 法国原子能源和替代能源委员会 | Hybrid semiconductor laser assembly and method for manufacturing such an assembly |
| CN111769186A (en) * | 2020-07-31 | 2020-10-13 | 佛山紫熙慧众科技有限公司 | Novel AlGaN-based ultraviolet LED epitaxial structure |
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| US20040201030A1 (en) * | 2003-04-14 | 2004-10-14 | Olga Kryliouk | GaN growth on Si using ZnO buffer layer |
| CN101047215A (en) * | 2006-03-30 | 2007-10-03 | 中国砂轮企业股份有限公司 | Diamond substrate and manufacturing method thereof |
| CN102044603A (en) * | 2009-10-23 | 2011-05-04 | 晶元光电股份有限公司 | Light-emitting element with bevel |
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2011
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| US20040201030A1 (en) * | 2003-04-14 | 2004-10-14 | Olga Kryliouk | GaN growth on Si using ZnO buffer layer |
| CN101047215A (en) * | 2006-03-30 | 2007-10-03 | 中国砂轮企业股份有限公司 | Diamond substrate and manufacturing method thereof |
| CN102044603A (en) * | 2009-10-23 | 2011-05-04 | 晶元光电股份有限公司 | Light-emitting element with bevel |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105322007A (en) * | 2015-07-20 | 2016-02-10 | 苏州能讯高能半导体有限公司 | Diamond substrate based nitride structure, preparation method and semiconductor device |
| CN105322007B (en) * | 2015-07-20 | 2018-12-28 | 苏州能讯高能半导体有限公司 | Nitride structure, preparation method and semiconductor devices based on diamond substrate |
| CN110785900A (en) * | 2017-06-19 | 2020-02-11 | 法国原子能源和替代能源委员会 | Hybrid semiconductor laser assembly and method for manufacturing such an assembly |
| CN110785900B (en) * | 2017-06-19 | 2021-08-13 | 法国原子能源和替代能源委员会 | Hybrid semiconductor laser assembly and method for manufacturing such an assembly |
| CN108767088A (en) * | 2017-06-30 | 2018-11-06 | 王晓靁 | Encapsulated substrate, method of manufacture and high energy gap device having the same |
| CN108767088B (en) * | 2017-06-30 | 2019-08-27 | 王晓靁 | Encapsulated substrate, method of manufacture and high energy gap device having the same |
| CN111769186A (en) * | 2020-07-31 | 2020-10-13 | 佛山紫熙慧众科技有限公司 | Novel AlGaN-based ultraviolet LED epitaxial structure |
| CN111769186B (en) * | 2020-07-31 | 2023-03-10 | 佛山紫熙慧众科技有限公司 | Novel AlGaN-based ultraviolet LED epitaxial structure |
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Application publication date: 20130605 |