CN105633032A - 一种指纹识别传感器的封装结构 - Google Patents

一种指纹识别传感器的封装结构 Download PDF

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CN105633032A
CN105633032A CN201510992194.2A CN201510992194A CN105633032A CN 105633032 A CN105633032 A CN 105633032A CN 201510992194 A CN201510992194 A CN 201510992194A CN 105633032 A CN105633032 A CN 105633032A
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fingerprint identification
identification sensor
wiring metal
layer
metal layer
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张黎
龙欣江
赖志明
陈栋
陈锦辉
胡正勋
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Jiangyin Changdian Advanced Packaging Co Ltd
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Abstract

本发明公开了一种指纹识别传感器的封装结构，属于半导体封装技术领域。其指纹识别传感器芯片（2）由背面嵌入包封体（1），绝缘层（3）覆盖所述感应区域（22）和电极（25）之外的硅基本体（21）的上表面与包封体（1）的上表面，所述再布线金属层Ⅰ（4）选择性地分布于绝缘层（3）的表面并与对应的电极（25）电性连接；所述通孔（11）设置于指纹识别传感器芯片（2）的四周并上下贯穿包封体（1）和绝缘层（3），所述再布线金属层Ⅱ（7）选择性地分布在包封体（1）的下表面，金属层（5）的一端与再布线金属层Ⅰ（4）连接，其另一端与再布线金属层Ⅱ（7）连接。本发明指纹识别传感器的封装结构实现了提高可靠性、减薄封装厚度等效果。

Description

一种指纹识别传感器的封装结构
技术领域
本发明涉及一种指纹识别传感器的封装结构，属于半导体封装技术领域。
背景技术
指纹识别传感器被广泛运用于智能电话、触摸板、移动计算设备、电器、车辆的面板或机身等。传统的指纹识别传感器通过CMOS半导体工艺形成，中国专利CN204167290公开了一种指纹识别传感器封装结构，参考图1，属于引线键合封装结构，感应芯片9通过金属线10从其顶部引出与焊线金属层6连接，金属线10将占据感应芯片9与焊线金属层6之间的垂直空间，一般地，引线键合封装结构有100微米左右的凸起，导致传感器厚度较大，同时金属线10的存在，使其可靠性存在隐患，感应不良，同时也影响指纹识别的敏感度。
发明内容
本发明的目的在于克服上述传统半导体器件的封装不足，提供一种提高可靠性、减薄封装厚度的指纹识别传感器的封装结构。
本发明的目的是这样实现的：
本发明一种指纹识别传感器的封装结构，其包括指纹识别传感器芯片，所述指纹识别传感器芯片包括硅基本体、设置于硅基本体的顶部中央的感应区域和环绕于感应区域四周的若干个电极，
还包括包封体、绝缘层和再布线金属层Ⅰ，所述指纹识别传感器芯片由背面嵌入包封体，所述绝缘层覆盖所述感应区域和电极之外的硅基本体的上表面与包封体1的上表面，所述再布线金属层Ⅰ选择性地分布于绝缘层的上表面并与对应的电极电性连接；
还包括通孔、再布线金属层Ⅱ和保护层，所述通孔设置于指纹识别传感器芯片的四周并上下贯穿包封体和绝缘层，其内壁沉积金属层，所述再布线金属层Ⅱ选择性地分布在包封体的下表面，其下表面设置若干个焊盘，所述金属层的一端与再布线金属层Ⅰ连接，其另一端与再布线金属层Ⅱ连接，所述保护层填充通孔、同时覆盖再布线金属层Ⅱ并露出焊盘，所述焊盘的裸露面设置防氧化层Ⅱ。
进一步地，所述通孔内金属层与再布线金属层Ⅱ为一体成形结构。
进一步地，所述再布线金属层Ⅰ的裸露面覆盖防氧化层Ⅰ。
进一步地，所述通孔的纵截面呈梯形或矩形。
进一步地，所述通孔的横截面呈圆形或多边形。
进一步地，所述硅基本体的上表面与包封体的上表面齐平。
本发明的有益效果是：
1、本发明通过通孔技术结合成熟的圆片级再布线工艺多次形成再布线金属层，将指纹识别传感器的正面的电极信号外延至包封体的背面，整体指纹识别面比较平滑，有助于提高指纹识别传感器的敏感度；
2、本发明的指纹识别传感器的封装结构中不再设置如传统指纹识别传感器的封装结构中所示的金属线，替而代之的再布线金属层性能更加稳定，有助于提高指纹识别传感器的封装结构的可靠性；同时，由于再布线金属层的厚度一般不到10微米，不像引线键合封装有100微米左右的凸起，从而在整体上减薄了其封装厚度，符合指纹识别传感器的封装结构的薄型化发展趋势。
附图说明
图1为传统指纹识别传感器的封装结构的示意图；
图2为本发明一种指纹识别传感器的封装结构的实施例的结构示意图；
其中，包封体1
通孔11
指纹识别传感器芯片2
硅基本体21
感应区域22
电极25
绝缘层3
再布线金属层Ⅰ4
防氧化层Ⅰ41
金属层5
再布线金属层Ⅱ7
焊盘71
保护层8
防氧化层Ⅱ9。
具体实施方式
现在将在下文中参照附图更加充分地描述本发明，在附图中示出了本发明的示例性实施例，从而本公开将本发明的范围充分地传达给本领域的技术人员。然而，本发明可以以许多不同的形式实现，并且不应被解释为限制于这里阐述的实施例。
实施例，参见图2
本发明一种指纹识别传感器的封装结构，其中指纹识别传感器芯片2包括硅基本体21、设置于硅基本体21的顶部中央的感应区域22和环绕于感应区域22四周的若干个电极25。电极25的个数可以在两个或两个以上。图2中以两个电极分别分布于感应区域22两侧示意。其硅基本体1的横截面一般呈矩形，电极25及其相关的电路图案设置于其硅基本体21的内部，而表现于顶部。感应区域22设置有感应元件，用于测量用户的指纹之间的电容，可以由此得到客户的手指的图像信息。
指纹识别传感器芯片2由背面嵌入包封体1，包封体1的材质目前以环氧树脂、酚醛树脂、有机硅树脂和不饱和聚酯树脂最为常用，并在其中添加氧化硅、氧化铝等填充料，以改善包封料的强度、电性能、粘度等性能，并提升封装结构的热机械可靠性。包封材料包封、固化完成后，呈固状的包封体1，可以起到防水、防潮、防震、防尘、散热、绝缘等作用。本实施例中，采用先进的圆片级加工工艺，因此硅基本体21的上表面与包封体1的上表面一般是齐平的。
氧化硅、氮化硅或树脂类介电材质的绝缘层3覆盖感应区域22和电极25之外的硅基本体21的上表面与包封体1的上表面。
再布线金属层Ⅰ4采用成熟的圆片级再布线工艺选择性地分布于绝缘层3的表面并与对应的电极25电性连接，再布线金属层Ⅰ4的厚度不大于10微米。再布线金属层Ⅰ4不连续，其分别对应不同的电极25，并彼此绝缘。图2中，左侧部分的再布线金属层Ⅰ4与左侧的电极25连接，右侧部分的再布线金属层Ⅰ4与右侧的电极25连接，左侧部分的再布线金属层Ⅰ4与右侧部分的再布线金属层Ⅰ4彼此绝缘。再布线金属层Ⅰ4的裸露面通过化学镀工艺形成的镍/金层形成防氧化层Ⅰ41。
指纹识别传感器芯片2的四周设置通孔11，通孔11的个数不少于电极25的个数，通孔11上下贯穿包封体1和绝缘层3。通孔11的纵截面呈梯形、矩形，其横截面呈圆形或多边形。通孔11的内壁沉积导电性能良好的金属层5，金属层5的材质包括但不限于铜。
再布线金属层Ⅱ7采用成熟的再布线工艺选择性地分布于包封体1的下表面，其下表面设置焊盘71，以便于本发明的指纹识别传感器的封装结构与PCB、MPCB等基板连接。再布线金属层Ⅱ7与对应的电极25电性连接；再布线金属层Ⅱ7不连续，其分别对应不同的电极25，并彼此绝缘。再布线金属层Ⅱ7的厚度不大于10微米。金属层5的一端与再布线金属层Ⅰ4连接，其另一端与再布线金属层Ⅱ7连接，实现电性连接，从而使指纹识别传感器的正面的电极信号外延至包封体1的背面，整体指纹识别面比较平滑，有助于提高指纹识别传感器的敏感度。同时，与传统指纹识别传感器的封装结构中的金属线相比，再布线金属层Ⅰ4和再布线金属层Ⅱ7的性能更加稳定，有助于提高指纹识别传感器的封装结构的可靠性。一般地，通孔11内金属层5与再布线金属层Ⅱ7均采用成熟的圆片级再布线工艺同时成形。
保护层8填充通孔11、覆盖再布线金属层Ⅱ7并露出焊盘71。焊盘71的裸露面设置防氧化层Ⅱ9，防氧化层Ⅱ9也可以是化学镀工艺形成的镍/金层。
本发明的指纹识别传感器的封装结构中多次应用技术成熟的金属再布线工艺，通过结构的调整设计和进一步减薄金属再布线的厚度，有效地减薄了整个封装结构的厚度，具体地，本发明的整个封装结构的厚度不大于300微米，一般地，整个封装结构的厚度不大于250微米。
本发明一种指纹识别传感器的封装结构不限于上述优选实施例，因此，任何本领域技术人员在不脱离本发明的精神和范围内，依据本发明的技术实质对以上实施例所作的任何修改、等同变化及修饰，均落入本发明权利要求所界定的保护范围内。

Claims (6)

1.一种指纹识别传感器的封装结构，其包括指纹识别传感器芯片（2），所述指纹识别传感器芯片（2）包括硅基本体（21）、设置于硅基本体（21）的顶部中央的感应区域（22）和环绕于感应区域（22）四周的若干个电极（25），
其特征在于：还包括包封体（1）、绝缘层（3）和再布线金属层Ⅰ（4），所述指纹识别传感器芯片（2）由背面嵌入包封体（1），所述绝缘层（3）覆盖所述感应区域（22）和电极（25）之外的硅基本体（21）的上表面与包封体（1）的上表面，所述再布线金属层Ⅰ（4）选择性地分布于绝缘层（3）的上表面并与对应的电极（25）电性连接；
还包括通孔（11）、再布线金属层Ⅱ（7）和保护层（8），所述通孔（11）设置于指纹识别传感器芯片（2）的四周并上下贯穿包封体（1）和绝缘层（3），其内壁沉积金属层（5），所述再布线金属层Ⅱ（7）选择性地分布在包封体（1）的下表面，其下表面设置若干个焊盘（71），所述金属层（5）的一端与再布线金属层Ⅰ（4）连接，其另一端与再布线金属层Ⅱ（7）连接，所述保护层（8）填充通孔（11）、同时覆盖再布线金属层Ⅱ（7）并露出焊盘（71），所述焊盘（71）的裸露面设置防氧化层Ⅱ（9）。
2.根据权利要求1所述的指纹识别传感器的封装结构，其特征在于：所述通孔（11）内金属层（5）与再布线金属层Ⅱ（7）为一体成形结构。
3.根据权利要求1所述的指纹识别传感器的封装结构，其特征在于：所述再布线金属层Ⅰ（4）的裸露面覆盖防氧化层Ⅰ（41）。
4.根据权利要求1所述的指纹识别传感器的封装结构，其特征在于：所述通孔（11）的纵截面呈梯形或矩形。
5.根据权利要求1或4所述的指纹识别传感器的封装结构，其特征在于：所述通孔（11）的横截面呈圆形或多边形。
6.根据权利要求1所述的指纹识别传感器的封装结构，其特征在于：所述硅基本体（21）的上表面与包封体（1）的上表面齐平。
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