CN105609538A - Top-emission display panel and manufacturing method - Google Patents
Top-emission display panel and manufacturing method Download PDFInfo
- Publication number
- CN105609538A CN105609538A CN201610183954.XA CN201610183954A CN105609538A CN 105609538 A CN105609538 A CN 105609538A CN 201610183954 A CN201610183954 A CN 201610183954A CN 105609538 A CN105609538 A CN 105609538A
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- top emission
- type display
- display floater
- layer
- emission type
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3026—Top emission
Abstract
The invention provides a top-emission display panel and a manufacturing method thereof. The top-emission display panel comprises a TFT (Thin Film Transistor) array substrate, a light emitting device arranged on the TFT array substrate and a packaging layer for packaging the light emitting device, wherein the light emitting device is a top-emission light emitting device and comprises a bottom electrode, a light emitting layer and a top electrode arranged on the TFT array substrate in sequence; and a transparent conductive super-hydrophobic film is arranged on the top electrode.
Description
Technical field
The invention belongs to Display Technique field, relate in particular to a kind of top emission type display floater and preparation method.
Background technology
In the present age of information-intensive society, further adding as the importance of the display of visual information transmission mediumBy force, at following dominate, display just towards gentlier, thinner, more low energy consumption, lower one-tenthThe trend development of basis and better picture quality.
Organic electroluminescent LED (OLED) owing to thering is self-luminous, reaction is fast, visual angle wide, brightnessThe advantage such as high, frivolous, its market potential prospect is had an optimistic view of by industry. Light emitting diode with quantum dots (QLED)Due to advantages such as its photochromic purity is high, luminous quantum efficiency is high, the easy tune of glow color, become in recent years OLEDStrong competitor. Therefore, these two kinds of Display Techniques are two main directions of demonstration field development at present.
Because OLED and QLED are active illuminating device, therefore it need to design comparatively complicated drivingMoving circuit drives. But complicated drive circuit causes the end emission light-emitting device aperture opening ratio madeLittle, be unfavorable for power consumption and the service life of luminescent device. Emission structure at top can significantly improve luminescent deviceAperture opening ratio, thereby reduce the power consumption of luminescent device, improve service life. But top emission light-emitting device is to topPortion's electrode is had relatively high expectations, and has both needed it to possess good electric conductivity, needs again to meet the good transparency. OrderBefore comparatively conventional top transparent electrode be thinner metallic film (10-20nm) or conducting metal oxide(as ITO). Metallic film is thinner, and light transmission is better, but electric conductivity reduction relatively, it is right therefore to needIts electric conductivity and the transparency are carried out balance, still cannot reach at present ideal effect. And ITO electric conductivity has relativelyLimit, while especially making broad area device, the voltage drop meeting that its Rc (ITO self-resistance) forms causesThe formation of mura (display brightness is inhomogeneous, causes the phenomenon of various vestiges), thus display effect affected.In addition, ITO adopts sputtering technology preparation conventionally, and sputtering technology can cause certain damage to lower film.In addition, due to luminescent device, particularly OLED is more responsive to water, oxygen, and top electrode need be had necessarilyWater-fast oxygen, and luminescent device needs strict encapsulation. Therefore, prior art haves much room for improvement and further develops.
Summary of the invention
The object of the present invention is to provide a kind of top emission type display floater, be intended to solve due to the transmitting of existing topThe top transparent electrode of luminescent device is difficult to the property of taking into account good electric conductivity and the transparency, causing luminescent deviceCan and service life not good problem.
Another object of the present invention is to provide a kind of preparation method of top emission type display floater.
The present invention is achieved in that a kind of top emission type display floater, comprises tft array substrate, settingLuminescent device on tft array substrate and for encapsulating the encapsulated layer of described luminescent device, wherein, described inLuminescent device is top emission light-emitting device, comprise the hearth electrode that is successively set on described tft array substrate,Luminescent layer and top electrode; On described top electrode, be provided with electrically conducting transparent based superhydrophobic thin films.
And a kind of preparation method of top emission type display floater, comprises the following steps:
One tft array substrate is provided;
On described tft array substrate, make luminescent device, and described luminescent device is top emission light-emitting device,Comprise the hearth electrode, luminescent layer and the top electrode that are successively set on described tft array substrate;
On described top electrode, make electrically conducting transparent based superhydrophobic thin films;
Carry out encapsulation process.
Top emission type display floater provided by the invention, in the top transparent electrode of described top emission light-emitting deviceUpper end is provided with electrically conducting transparent based superhydrophobic thin films. The introducing of described electrically conducting transparent based superhydrophobic thin films, can protectDemonstrate,prove under the prerequisite of described top electrode electric conductivity, suitably reduce the thickness of described top electrode, and then improve wholeThe light transmission of described top electrode. In addition, owing to having covered transparent at the outer surface of described top emission light-emitting deviceConductive super-hydrophobic film, described electrically conducting transparent based superhydrophobic thin films has super-hydrophobicity, therefore, can be effectivelyPrevent that outside moisture from infiltrating luminescent device, thereby improve the service life of luminescent device.
The preparation method of top emission type display floater provided by the invention, easy control simple to operate, is easy to realize aobviousShow the industrialization production of panel.
Brief description of the drawings
Fig. 1 is the structural representation of the top emission type display floater that provides of the embodiment of the present invention;
Fig. 2 is the tft array substrate structural representation that the embodiment of the present invention provides;
Fig. 3 be the embodiment of the present invention provide on tft array substrate, make the structural representation after luminescent deviceFigure;
Fig. 4 be the embodiment of the present invention provide on the top electrode of luminescent device, to make electrically conducting transparent super-hydrophobic thinStructural representation after film.
Detailed description of the invention
In order to make the technical problem to be solved in the present invention, technical scheme and beneficial effect clearer, withUnder in conjunction with the embodiments, the present invention is further elaborated. Should be appreciated that described herein concreteEmbodiment only, in order to explain the present invention, is not intended to limit the present invention.
In conjunction with Fig. 1, the embodiment of the present invention provides a kind of top emission type display floater, comprises tft array basePlate 1, be arranged on luminescent device 2 on tft array substrate 1 and for encapsulating the envelope of described luminescent device 2Dress layer 4, wherein, described luminescent device 2 is top emission light-emitting device, comprises and is successively set on described TFTHearth electrode 21, luminescent layer 22 and top electrode 23 on array base palte 1; On described top electrode 23, be provided withBright conductive super-hydrophobic film 3.
Concrete, described tft array substrate 1 has the tft array for driving described luminescent device 2,The embodiment of the present invention can adopt the tft array substrate of this area routine.
Described in the embodiment of the present invention, luminescent device 2 can be OLED or QLED, concrete, described photophorePart 2 comprises the hearth electrode 21, luminescent layer 22 and the top electrode that are successively set on described tft array substrate 123. Because described luminescent device 2 is top emission light-emitting device, therefore, described hearth electrode 21 is reflecting electrode,For reflecting the light of launching from described luminescent layer 22; Described top electrode 23 is transparency electrode, described photophoreThe light of part 2 is penetrated by described top electrode 23. In the embodiment of the present invention, described top electrode 23 is transparent metalFilm, specifically comprises Mg, Al, Ag or their alloy, but is not limited to this. Described luminescent layer 22 toComprise less light-emitting layer, preferred, in order to improve the luminous efficiency of described luminescent device 2, described luminescent layer22 also comprise hole injection layer, hole transmission layer, electronic barrier layer, hole blocking layer, electron transfer layer,At least one deck in electron injecting layer. As most preferred embodiment, described luminescent layer 22 for comprise hole injection layer,Hole transmission layer, electronic barrier layer, light-emitting layer, hole blocking layer, electron transfer layer, electron injecting layerMultilayer laminated. In described luminescent layer 22, the material of each functional layer can adopt this area conventional func material.
It is super-hydrophobic that the embodiment of the present invention is provided with electrically conducting transparent on the described top electrode 23 of described luminescent device 2Film 3. Described electrically conducting transparent based superhydrophobic thin films 3 has good electric conductivity and super-hydrophobicity, thereby canEnsureing, under the prerequisite of described top electrode 23 electric conductivities, suitably to reduce the thickness of described top electrode 23, enterAnd improve the light transmission of whole described top electrode 23. As preferred embodiment, described electrically conducting transparent is super-hydrophobic thinFilm 3 is by conductive carbon nanotube and hydrophobic resin is compound forms. Wherein, described conductive carbon nanotube can provideGood electric conductivity, described hydrophobic resin provides super-hydrophobicity. Further, due to described conductive carbon nanometerThe content of pipe and described hydrophobic resin has certain influence to the performance of described electrically conducting transparent based superhydrophobic thin films 3, toolBody, if the content of described conductive carbon nanotube too low (content of described conductive carbon nanotube is relatively too high),Electric conductivity is inadequate; When the content of described conductive carbon nanotube to a certain extent after (described conductive carbon nanotubeContent relatively reduce), to not quite but shadow on the contrary of the Conductivity of described electrically conducting transparent based superhydrophobic thin films 3Ring its super-hydrophobicity. Therefore, preferred, taking the total amount of described electrically conducting transparent based superhydrophobic thin films 3 as 100%Meter, the quality percentage composition of described conductive carbon nanotube is 5-20%. As another preferred embodiment, instituteThe thickness of stating electrically conducting transparent based superhydrophobic thin films 3 is 100-1000nm. Thickness is too low, and described electrically conducting transparent is super thinThe electric conductivity of water film 3 and the raising of super-hydrophobicity are limited.
Because described electrically conducting transparent based superhydrophobic thin films 3 has good hydrophobicity, therefore, it can effectively press downMoisture processed gos deep in described luminescent device 2, thereby improves its service life. Described in order further to improveThe hydrophobicity of bright conductive super-hydrophobic film 3, can further carry out described electrically conducting transparent based superhydrophobic thin films 3Optimization process. As a concrete preferred embodiment, described electrically conducting transparent based superhydrophobic thin films 3 is through fluoridizingThe electrically conducting transparent based superhydrophobic thin films of hydrophobic treatments, fluoridizes the described electrically conducting transparent based superhydrophobic thin films 3 of hydrophobic treatmentsThere is better super-hydrophobicity. Further, described in, fluoridize hydrophobic treatments and can adopt CF4Plasma placeReason realizes. As another concrete preferred embodiment, described electrically conducting transparent based superhydrophobic thin films 3 has for surfaceThe electrically conducting transparent based superhydrophobic thin films of micro-nano structure (carries out surface to described electrically conducting transparent based superhydrophobic thin films 3Reason, forms micro-nano structure on its surface), thus super-hydrophobicity strengthened.
Described in the embodiment of the present invention, encapsulated layer 4 can adopt the encapsulation layer structure of this area routine, concrete, canFormed by encapsulation cover plate 42 and sealing frame 41.
The top emission type display floater that the embodiment of the present invention provides, saturating at the top of described top emission light-emitting devicePrescribed electrode upper end is provided with electrically conducting transparent based superhydrophobic thin films. The introducing of described electrically conducting transparent based superhydrophobic thin films, canTo ensure, under the prerequisite of described top electrode electric conductivity, suitably reducing the thickness of described top electrode, Jin ErtiThe light transmission of high whole described top electrode. In addition, because the outer surface at described top emission light-emitting device coversElectrically conducting transparent based superhydrophobic thin films, described electrically conducting transparent based superhydrophobic thin films has super-hydrophobicity, therefore, canEffectively prevent that outside moisture from infiltrating luminescent device, thereby improve the service life of luminescent device.
Described in the embodiment of the present invention, top emission type display floater can prepare by following method.
And in conjunction with Fig. 1-4, the embodiment of the present invention also provides a kind of preparation of top emission type display floaterMethod, comprises the following steps:
S01., one tft array substrate 1 is provided;
S02. on described tft array substrate 1, make luminescent device 2, and described luminescent device 2 is for sending out on topPenetrate luminescent device, comprise the hearth electrode 21, the luminescent layer 22 that are successively set on described tft array substrate 1With top electrode 23;
S03. on the described top electrode 23 of described luminescent device 2, make electrically conducting transparent based superhydrophobic thin films 3;
S04. carry out encapsulation process.
Concrete, as shown in Figure 2, in above-mentioned steps S01, described tft array substrate 1 can adopt abilityThe tft array substrate of territory routine, it has the tft array for driving described luminescent device 2.
As shown in Figure 3, in above-mentioned steps S02, on described tft array substrate 1, make luminescent device 2Method can adopt conventional method realize. Wherein, described luminescent device 2 can be OLED or QLED, toolBody, described luminescent device 2 comprises the hearth electrode 21 that is successively set on described tft array substrate 1, sends outPhotosphere 22 and top electrode 23.
As shown in Figure 4, in above-mentioned steps S03, on the described top electrode 23 of described luminescent device 2, makeElectrically conducting transparent based superhydrophobic thin films 3, makes described electrically conducting transparent based superhydrophobic thin films 3 cover described top electrode 23 and showsFace, performance improves electric conductivity and prevents the function that moisture infiltrates.
In above-mentioned steps S04, described encapsulation process can adopt the method for packing of this area routine. EncapsulateThe structure of the described top emission type display floater obtaining after processing as shown in Figure 1.
The preparation method of the top emission type display floater that the embodiment of the present invention provides, easy control simple to operate, is easy toRealizing the industrialization of display floater produces.
The foregoing is only preferred embodiment of the present invention, in order to limit the present invention, not all at thisAny amendment of doing within bright spirit and principle, be equal to and replace and improvement etc., all should be included in the present inventionProtection domain within.
Claims (10)
1. a top emission type display floater, is characterized in that, comprises tft array substrate, is arranged on TFTLuminescent device on array base palte and for encapsulating the encapsulated layer of described luminescent device, wherein, described photophorePart is top emission light-emitting device, comprises the hearth electrode, the luminescent layer that are successively set on described tft array substrateAnd top electrode; On described top electrode, be provided with electrically conducting transparent based superhydrophobic thin films.
2. top emission type display floater as claimed in claim 1, is characterized in that, described electrically conducting transparent is superHydrophobic film is by conductive carbon nanotube and hydrophobic resin is compound forms.
3. top emission type display floater as claimed in claim 2, is characterized in that, with described electrically conducting transparentThe total amount of based superhydrophobic thin films is 100%, and the quality percentage composition of described conductive carbon nanotube is 5-20%.
4. top emission type display floater as claimed in claim 1, is characterized in that, described electrically conducting transparent is superThe thickness of hydrophobic film is 100-1000nm.
5. the top emission type display floater as described in as arbitrary in claim 1-4, is characterized in that, described transparentConductive super-hydrophobic film is the electrically conducting transparent based superhydrophobic thin films through fluoridizing hydrophobic treatments.
6. top emission type display floater as claimed in claim 5, is characterized in that, described in fluoridize hydrophobic placeReason adopts CF4Cement Composite Treated by Plasma realizes.
7. the top emission type display floater as described in as arbitrary in claim 1-4, is characterized in that, described transparentConductive super-hydrophobic film surface has micro-nano structure.
8. the top emission type display floater as described in as arbitrary in claim 1-4, is characterized in that, described luminousDevice is OLED or QLED.
9. the top emission type display floater as described in as arbitrary in claim 1-4, is characterized in that, described luminousLayer is hole injection layer, hole transmission layer, electronic barrier layer, light-emitting layer, hole blocking layer, electronics biographyDefeated layer, electron injecting layer multilayer laminated.
10. a preparation method for top emission type display floater, comprises the following steps:
One tft array substrate is provided;
On described tft array substrate, make luminescent device, and described luminescent device is top emission light-emitting device,Comprise the hearth electrode, luminescent layer and the top electrode that are successively set on described tft array substrate;
On described top electrode, make electrically conducting transparent based superhydrophobic thin films;
Carry out encapsulation process.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610183954.XA CN105609538B (en) | 2016-03-29 | 2016-03-29 | Top-emission type display panel and manufacturing method thereof |
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| CN201610183954.XA CN105609538B (en) | 2016-03-29 | 2016-03-29 | Top-emission type display panel and manufacturing method thereof |
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| CN105609538A true CN105609538A (en) | 2016-05-25 |
| CN105609538B CN105609538B (en) | 2020-03-27 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106784378A (en) * | 2016-12-29 | 2017-05-31 | 固安翌光科技有限公司 | Light-emitting device and its manufacture method |
| CN106848024A (en) * | 2017-02-20 | 2017-06-13 | 深圳市华星光电技术有限公司 | Luminescent device and display device |
| CN108123065A (en) * | 2017-12-15 | 2018-06-05 | 深圳市华星光电技术有限公司 | A kind of OLED display panel and its method for packing |
| CN109065753A (en) * | 2018-08-02 | 2018-12-21 | 京东方科技集团股份有限公司 | A kind of top light emitting-type OLED display panel and preparation method thereof |
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| CN1049752A (en) * | 1989-03-31 | 1991-03-06 | 东芝株式会社 | Nesa coating and the AC powder type electrolumnescent display panel and the LCD that adopt this nesa coating |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106784378A (en) * | 2016-12-29 | 2017-05-31 | 固安翌光科技有限公司 | Light-emitting device and its manufacture method |
| CN106848024A (en) * | 2017-02-20 | 2017-06-13 | 深圳市华星光电技术有限公司 | Luminescent device and display device |
| CN108123065A (en) * | 2017-12-15 | 2018-06-05 | 深圳市华星光电技术有限公司 | A kind of OLED display panel and its method for packing |
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| CN105609538B (en) | 2020-03-27 |
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