CN106784378A - Light-emitting device and its manufacture method - Google Patents
Light-emitting device and its manufacture method Download PDFInfo
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- CN106784378A CN106784378A CN201611246561.5A CN201611246561A CN106784378A CN 106784378 A CN106784378 A CN 106784378A CN 201611246561 A CN201611246561 A CN 201611246561A CN 106784378 A CN106784378 A CN 106784378A
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- layer
- light
- emitting device
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- hydrophobic
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention discloses a kind of light-emitting device and its manufacture method, wherein the light-emitting device includes：Substrate；Conductive hydrophobic layer, is set on the substrate；Organic luminous layer, is arranged on the conductive hydrophobic layer；Electrode layer, is arranged on the organic luminous layer；Passivation layer, is arranged on the electrode layer, at least to coat the organic luminous layer and the electrode layer.Thus, by setting conductive hydrophobic layer between substrate and organic luminous layer, serve simultaneously and stop that steam and oxygen enter the effect of light-emitting device and electrode, the extra processing step that barrier layer is set can be saved, so as to reduce the manufacturing technology steps of light-emitting device, the manufacturing cost of light-emitting device is reduced.
Description
Technical field
The present invention relates to technical field of semiconductors, and in particular to a kind of light-emitting device and its manufacture method.
Background technology
With continuing to develop for Display Technique, such as Organic Light Emitting Diode (OLED, Organic Light-Emitting
) etc. Diode light-emitting device is widely used, while OLED matches somebody with somebody due to having the advantages that energy consumption is low, lightweight, thickness of thin
Closing flexible base board can also have flexible characteristic.
However, steam and oxygen readily penetrate through substrate and enter into inside light-emitting device, so as to light-emitting device can be influenceed
Service life.Compared with the rigid substrates such as glass, steam and oxygen are easier to pass through substrate flexible base board.Asked to solve this
Topic, as shown in figure 1, existing OLED light-emitting devices would generally set barrier layer 12 between substrate 11 and light-emitting component, and
Encapsulated layer 17 and passivation layer 16 are set on the top of light-emitting component and sidepiece, and wherein light-emitting component is by first electrode 13, You Jifa
Photosphere 14 and second electrode 15 are constituted.Stop the top of steam and oxygen from light-emitting component by passivation layer 16 and encapsulated layer 17
Entered into inside light-emitting device with sidepiece, and stop that steam and oxygen are entered into from the bottom of light-emitting component by barrier layer 12
Inside light-emitting device, so as to overcome the problem of flexible base board steam and oxygen barrier ability.But, the extra barrier layer for setting
The manufacturing technology steps of light-emitting device can be increased again, the manufacturing cost of light-emitting device is improve.
The content of the invention
In view of this, a kind of light-emitting device and its manufacture method are the embodiment of the invention provides, to solve in the prior art
The problem that light-emitting device manufacturing technology steps are more, be more expensive to manufacture.
According in a first aspect, the embodiment of the invention provides a kind of light-emitting device, including：Substrate；Conductive hydrophobic layer, is set
On the substrate；Organic luminous layer, is arranged on the conductive hydrophobic layer；Electrode layer, is arranged on the organic luminous layer；
Passivation layer, is arranged on the electrode layer, at least to coat the organic luminous layer and the electrode layer.
Alternatively, the square resistance of the conductive hydrophobic layer is 1-1000 Ω/, preferably 1-10 Ω/.
Alternatively, it is provided with auxiliary electrode on the conductive hydrophobic layer.
Alternatively, the conductive hydrophobic layer is formed by conductive material and hydrophobic resin Material cladding；Or it is described conductive thin
Water layer includes the tin oxide based superhydrophobic thin films with surface texture.
Alternatively, the conductive material includes at least one of conductive carbon nanotube, nano silver wire, Graphene.
Alternatively, the conductive hydrophobic layer is electrically conducting transparent hydrophobic layer, and transmitance is more than 80%, and contact angle is more than
150°。
Alternatively, the electrode layer includes conductive hydrophobic material；And/or the passivation layer includes hydrophobic material.
Alternatively, the light-emitting device also includes：Encapsulated layer, is arranged on the passivation layer, and the encapsulated layer includes dredging
Water material.
Alternatively, the light-emitting device is Organic Light Emitting Diode, and the substrate is flexible base board.
According to second aspect, a kind of manufacture method of light-emitting device is the embodiment of the invention provides, including：The shape on substrate
Into conductive hydrophobic layer；Organic luminous layer is formed on the conductive hydrophobic layer；Electrode layer is formed on the organic luminous layer；
Passivation layer is formed on the electrode layer, at least to coat the organic luminous layer and the electrode layer.
Alternatively, between conductive hydrophobic layer is formed on substrate and organic luminous layer is formed on the conductive hydrophobic layer,
Methods described also includes：Auxiliary electrode layer is formed on the conductive hydrophobic layer.
Alternatively, after formation passivation layer on the electrode layer, methods described also includes：Formed on the passivation layer
Encapsulated layer.
The light-emitting device and its manufacture method of the embodiment of the present invention, set conductive by between substrate and organic luminous layer
Hydrophobic layer, and the square resistance of conductive hydrophobic layer is smaller, requirement of the light-emitting device to electrodes conduct performance is can reach, while playing
Stop that steam and oxygen enter the effect of light-emitting device, the extra processing step that barrier layer is set can be saved, so as to reduce
The manufacturing technology steps of light-emitting device, reduce the manufacturing cost of light-emitting device.
Further, include conductive hydrophobic material by making electrode layer, or passivation layer is included hydrophobic material, further
Lifting is for steam and oxygen barrier ability.
Further, by setting encapsulated layer, and encapsulated layer is included hydrophobic material, further lifting for steam and
Oxygen barrier ability.
Brief description of the drawings
The features and advantages of the present invention can be more clearly understood from by reference to accompanying drawing, accompanying drawing is schematical without that should manage
Solution is to carry out any limitation to the present invention, in the accompanying drawings：
Fig. 1 shows a kind of schematic diagram of OLED light-emitting devices in the prior art；
Fig. 2 shows the schematic diagram of light-emitting device according to embodiments of the present invention；
Fig. 3 shows the schematic diagram of light-emitting device according to another embodiment of the present invention；
Fig. 4 shows the flow chart of the manufacture method of light-emitting device according to embodiments of the present invention.
Specific embodiment
To make the purpose, technical scheme and advantage of the embodiment of the present invention clearer, below in conjunction with the embodiment of the present invention
In accompanying drawing, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is
A part of embodiment of the present invention, rather than whole embodiments.Based on the embodiment in the present invention, those skilled in the art are not having
There is the every other embodiment made and being obtained under the premise of creative work, belong to the scope of protection of the invention.
The schematic diagram of light-emitting device Fig. 2 according to embodiments of the present invention, as shown in Fig. 2 the light-emitting device can include base
Plate 21, conductive hydrophobic layer 22, organic luminous layer 23, electrode layer 24 and passivation layer 25, wherein conductive hydrophobic layer 22 is arranged on substrate
On 21, organic luminous layer 23 is arranged on conductive hydrophobic layer 22, and electrode layer 24 is arranged on organic luminous layer 23, and passivation layer 25 sets
Put on electrode layer 24, to be at least coated with machine luminescent layer 23 and electrode layer 24.Herein, conductive hydrophobic layer 22 has and leads simultaneously
Electrical characteristics and hydrophobic property, because conductive hydrophobic layer 22 has hydrophobic property, can prevent steam and oxygen from entering through substrate 21
Enter to organic luminous layer 23；Passivation layer 25 cladding organic luminous layer 23 and electrode layer 24 on electrode layer 24 are arranged on, to prevent
Steam and oxygen enter organic luminous layer 23 and corroding electrode layer 24.Simultaneously as conductive hydrophobic layer 22 also has conductive characteristic,
Light-emitting component normal work can be enabled together with electrode layer 24 as light-emitting component electrode.
The light-emitting device of the embodiment of the present invention can be Organic Light Emitting Diode (OLED), and this is also not necessarily limited to certainly, also may be used
With suitable for other light-emitting devices, and the embodiment of the present invention is particularly well-suited to the base for steam and oxygen barrier ability
Plate, such as flexible base board, conductive hydrophobic layer 22 can stop that steam and oxygen pass through substrate 21 while electrode effect is played
Enter into organic luminous layer 23, naturally it is also possible to suitable for glass substrate etc. for steam and the strong base of oxygen barrier ability
Plate, with further lifting for steam and oxygen barrier ability.
Light-emitting device according to embodiments of the present invention, by setting conductive hydrophobic layer between substrate and organic luminous layer,
Serve simultaneously and stop that steam and oxygen enter the effect of light-emitting device and electrode, the extra technique that barrier layer is set can be saved
Step, so as to reduce the manufacturing technology steps of light-emitting device, reduces the manufacturing cost of light-emitting device.
Alternatively, the square resistance of conductive hydrophobic layer 22 can be 1-1000 Ω/, it is therefore preferable to 1-10 Ω/, so
It is capable of achieving effect of the conduction hydrophobic layer 22 as light-emitting element electrode.
In order to further improve the electric conductivity of conductive hydrophobic layer, it is set to be more suitable for electrode, as a kind of optional implementation
Mode, as shown in figure 3, auxiliary electrode layer 27 can be set between conductive hydrophobic layer 22 and organic luminous layer 23, aids in being formed
During electrode layer 27, auxiliary electrode layer 27 need not cover whole conduction hydrophobic layer 22, it is only necessary to corresponding with organic luminous layer 23 to be
Can.The auxiliary electrode layer 27 can be Mo/Al/Mo layers or any other metal or metal oxide composite bed.
Specifically, conductive hydrophobic layer 22 can be formed by the Material cladding of conductive material and hydrophobic resin, or can be with
Including the tin oxide based superhydrophobic thin films with surface texture, so that conductive hydrophobic layer 22 has good conductive features and resistance
Gear characteristic.More specifically, above-mentioned conductive material can include at least one of conductive carbon nanotube, nano silver wire, Graphene.
Used as a kind of optional embodiment, conductive hydrophobic layer 22 can be electrically conducting transparent hydrophobic layer, be also transparent base so in substrate 21
In the case of plate, the light that organic luminous layer 23 sends can be from top and sidepiece outgoing, it is also possible to from bottom outlet, and being more convenient for should
In using various application scenarios.In order to lift the transmissivity of light that organic luminous layer 23 sends from bottom outlet, it is preferable that transparent
The transmitance of conductive hydrophobic layer is more than 80%, and contact angle is more than 150 °.
Used as a kind of optional embodiment, electrode layer 24 can also include conductive hydrophobic material, for example, can be and conduction
The identical material of hydrophobic layer 22, such as material containing conductive carbon nanotube and composite hydrophobic resin or with surface texture
Tin oxide based superhydrophobic thin films, with further lifting for steam and oxygen barrier ability.
Further, passivation layer 25 can also include hydrophobic material, and such as transparent hydrophobic material prevents steam to be lifted
With the ability that oxygen enters organic luminous layer 23 and corroding electrode layer 24.
Used as another optional embodiment, as shown in figures 2 and 3, light-emitting device according to embodiments of the present invention can be with
Including encapsulated layer 26, it is arranged on passivation layer 25, prevents steam and oxygen from entering organic luminous layer further to lift passivation layer
23 and corroding electrode layer 24 ability.Encapsulated layer 26 can also be arranged to coat whole light-emitting device, and the encapsulated layer 26 can also
Including hydrophobic material, such as transparent hydrophobic material.
Correspondingly, the embodiment of the present invention additionally provides a kind of manufacture method of light-emitting device, as shown in figure 4, the method can
To comprise the following steps：
S11. conductive hydrophobic layer 22 is formed on the base plate (21.
S12. auxiliary electrode layer 27 is formed on conductive hydrophobic layer 22.The step is optional step, so that auxiliary electricity
Pole layer 27 is formed between conductive hydrophobic layer 22 and organic luminous layer 23 to be formed, it is possible thereby to further improve conductive hydrophobic
The electric conductivity of layer 22, makes it be more suitable for electrode.
S13. organic luminous layer 23 is formed on conductive hydrophobic layer 22.For being formed with auxiliary electrode on conductive hydrophobic layer 22
The situation of layer, forms organic luminous layer 23 on auxiliary electrode layer.
S14. electrode layer 24 is formed on organic luminous layer 23.
S15. passivation layer 25 is formed on electrode layer 24, to be at least coated with machine luminescent layer 23 and electrode layer 24.
As described above, the manufacture method of light-emitting device according to embodiments of the present invention, by substrate 21 and organic hair
Conductive hydrophobic layer 22 is set between photosphere 23, while serve stop that steam and oxygen enter the effect of light-emitting device and electrode,
The extra processing step that barrier layer is set can be saved, so as to reduce the manufacturing technology steps of light-emitting device, is reduced luminous
The manufacturing cost of device.
Conductive hydrophobic layer 22 can be formed by the Material cladding of conductive material and hydrophobic resin, or can include thering is table
The tin oxide based superhydrophobic thin films of face structure, so that conductive hydrophobic layer 22 has good conductive features and barrier properties, more
Specifically, conductive material can include at least one of conductive carbon nanotube, nano silver wire, Graphene.It is optional as one kind
Implementation method, conductive hydrophobic layer 22 can be electrically conducting transparent hydrophobic layer, so that the light that organic luminous layer 23 sends can be from bottom
Outgoing, is more convenient for being applied in various application scenarios.
By forming passivation layer 25 on electrode layer 24, to coat organic luminous layer 23 and electrode layer 24, such that it is able to anti-
Sealing vapour and oxygen enter organic luminous layer 23 and corroding electrode layer 24.Electrode layer 24 can for example include conductive hydrophobic material,
The conductive hydrophobic material for example can be with the identical material of conductive hydrophobic layer 22, such as by conductive material and the material of hydrophobic resin
Material is composited or the tin oxide based superhydrophobic thin films with surface texture, with further lifting for steam and oxygen barrier
Ability, similarly, the conductive material can include at least one of conductive carbon nanotube, nano silver wire, Graphene.Passivation layer
25 can also include hydrophobic material, and such as transparent hydrophobic material prevents steam and oxygen from entering organic luminous layer 23 to be lifted
And the ability of corroding electrode layer 24.
As a kind of optional embodiment, can also include after above-mentioned steps S15：
S16. encapsulated layer 26 is formed on passivation layer 25, prevents steam and oxygen from entering organic further to lift passivation layer
The ability of luminescent layer 23 and corroding electrode layer 24.It is, of course, also possible to encapsulated layer 26 is arranged to coat whole light-emitting device, to enter
One step is lifted for steam and oxygen barrier ability.Similarly, the encapsulated layer 26 can also include hydrophobic material, such as transparent super
Hydrophobic material.
Although being described in conjunction with the accompanying embodiments of the present invention, those skilled in the art can not depart from this hair
Various modification can be adapted in the case of bright spirit and scope and modification, and such modification and modification are each fallen within by appended claims
Within limited range.
Claims (10)
1. a kind of light-emitting device, it is characterised in that including：
Substrate；
Conductive hydrophobic layer, is set on the substrate；
Organic luminous layer, is arranged on the conductive hydrophobic layer；
Electrode layer, is arranged on the organic luminous layer；
Passivation layer, is arranged on the electrode layer, at least to coat the organic luminous layer and the electrode layer.
2. light-emitting device according to claim 1, it is characterised in that the square resistance of the conductive hydrophobic layer is 1-1000
Ω/, preferably 1-10 Ω/.
3. light-emitting device according to claim 1, it is characterised in that be provided with auxiliary electrode on the conductive hydrophobic layer.
4. light-emitting device according to claim 1, it is characterised in that the conductive hydrophobic layer is by conductive material and hydrophobic tree
Fat Material cladding is formed；Or the conductive hydrophobic layer includes the tin oxide based superhydrophobic thin films with surface texture.
5. light-emitting device according to claim 4, it is characterised in that the conductive material includes conductive carbon nanotube, silver
At least one of nano wire, Graphene.
6. the light-emitting device according to any one of claim 1-5, it is characterised in that the conductive hydrophobic layer is transparent leading
Electric hydrophobic layer, and transmitance is more than 80%, contact angle is more than 150 °.
7. the light-emitting device according to any one of claim 1-6, it is characterised in that the electrode layer includes conductive hydrophobic
Material；And/or the passivation layer includes hydrophobic material.
8. the light-emitting device according to any one of claim 1-7, it is characterised in that also include：
Encapsulated layer, is arranged on the passivation layer, and the encapsulated layer includes hydrophobic material.
9. the light-emitting device according to any one of claim 1-8, it is characterised in that the light-emitting device is organic light emission
Diode, the substrate is flexible base board.
10. a kind of manufacture method of light-emitting device, it is characterised in that including：
Conductive hydrophobic layer is formed on substrate；
Organic luminous layer is formed on the conductive hydrophobic layer；
Electrode layer is formed on the organic luminous layer；
Passivation layer is formed on the electrode layer, at least to coat the organic luminous layer and the electrode layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611246561.5A CN106784378A (en) | 2016-12-29 | 2016-12-29 | Light-emitting device and its manufacture method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611246561.5A CN106784378A (en) | 2016-12-29 | 2016-12-29 | Light-emitting device and its manufacture method |
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| Publication Number | Publication Date |
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| CN106784378A true CN106784378A (en) | 2017-05-31 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201611246561.5A Pending CN106784378A (en) | 2016-12-29 | 2016-12-29 | Light-emitting device and its manufacture method |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107193148A (en) * | 2017-07-27 | 2017-09-22 | 武汉华星光电技术有限公司 | A kind of display base plate and liquid crystal display |
| CN113437120A (en) * | 2021-06-11 | 2021-09-24 | 深圳市华星光电半导体显示技术有限公司 | Display panel and manufacturing method thereof |
| CN113671759A (en) * | 2021-08-17 | 2021-11-19 | 深圳市华星光电半导体显示技术有限公司 | Display panel and display device |
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| WO2012011268A1 (en) * | 2010-07-23 | 2012-01-26 | パナソニック株式会社 | Display panel and production method thereof |
| CN102810648A (en) * | 2011-05-31 | 2012-12-05 | 苏州大学 | Electric conducting thin film, preparation method thereof and organic photoelectric device |
| CN105609538A (en) * | 2016-03-29 | 2016-05-25 | Tcl集团股份有限公司 | Top-emission display panel and manufacturing method |
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| CN1049752A (en) * | 1989-03-31 | 1991-03-06 | 东芝株式会社 | Nesa coating and the AC powder type electrolumnescent display panel and the LCD that adopt this nesa coating |
| CN1612650A (en) * | 2003-10-29 | 2005-05-04 | 铼宝科技股份有限公司 | Organic light-emitting display panel |
| WO2012011268A1 (en) * | 2010-07-23 | 2012-01-26 | パナソニック株式会社 | Display panel and production method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107193148A (en) * | 2017-07-27 | 2017-09-22 | 武汉华星光电技术有限公司 | A kind of display base plate and liquid crystal display |
| CN107193148B (en) * | 2017-07-27 | 2020-07-31 | 武汉华星光电技术有限公司 | Display substrate and liquid crystal display device |
| CN113437120A (en) * | 2021-06-11 | 2021-09-24 | 深圳市华星光电半导体显示技术有限公司 | Display panel and manufacturing method thereof |
| CN113437120B (en) * | 2021-06-11 | 2022-08-05 | 深圳市华星光电半导体显示技术有限公司 | Display panel and manufacturing method thereof |
| CN113671759A (en) * | 2021-08-17 | 2021-11-19 | 深圳市华星光电半导体显示技术有限公司 | Display panel and display device |
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Application publication date: 20170531 |