CN105609538B - Top-emission type display panel and manufacturing method thereof - Google Patents
Top-emission type display panel and manufacturing method thereof Download PDFInfo
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- CN105609538B CN105609538B CN201610183954.XA CN201610183954A CN105609538B CN 105609538 B CN105609538 B CN 105609538B CN 201610183954 A CN201610183954 A CN 201610183954A CN 105609538 B CN105609538 B CN 105609538B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3026—Top emission
Abstract
The invention provides a top emission type display panel and a manufacturing method thereof. The top emission type display panel comprises a TFT array substrate, a light-emitting device arranged on the TFT array substrate and an encapsulation layer used for encapsulating the light-emitting device, wherein the light-emitting device is a top emission light-emitting device and comprises a bottom electrode, a light-emitting layer and a top electrode which are sequentially arranged on the TFT array substrate; and a transparent conductive super-hydrophobic film is arranged on the top electrode.
Description
Technical Field
The invention belongs to the technical field of display, and particularly relates to a top emission type display panel and a manufacturing method thereof.
Background
In the contemporary information society, the importance of displays as a visual information transmission medium is further strengthened, and displays are being developed toward the trend of lighter, thinner, lower power consumption, lower cost, and better image quality in order to dominate in the future.
Organic Light Emitting Diodes (OLEDs) have potential market prospects that are promising for the industry due to their advantages of self-luminescence, fast response, wide viewing angle, high brightness, thinness, and the like. Quantum dot light emitting diodes (QLEDs) have recently become a strong competitor to OLEDs due to their advantages of high light color purity, high light emission quantum efficiency, easy color adjustment of light emission, and the like. Therefore, these two display technologies are two main directions of development in the display field at present.
Since both the OLED and the QLED are active light emitting devices, a driving circuit with a complicated design is required for driving. However, the complicated driving circuit results in a small aperture ratio of the fabricated bottom emission light emitting device, which is not favorable for power consumption and service life of the light emitting device. The top emission structure can greatly improve the aperture opening ratio of the light-emitting device, thereby reducing the power consumption of the light-emitting device and prolonging the service life. However, the top emission light emitting device has high requirements for the top electrode, and needs to have both good conductivity and good transparency. The currently more commonly used top transparent electrodes are thin metal films (10-20nm) or conductive metal oxides (e.g., ITO). The thinner the metal thin film is, the better the light transmission is, but the conductivity is relatively lowered, so that the conductivity and the transparency need to be balanced, and the desired effect cannot be achieved at present. ITO has relatively limited conductivity, and in particular, when a large-area device is manufactured, a voltage drop caused by Rc (ITO self-resistance) of the ITO causes mura (phenomenon of various traces due to non-uniform brightness of a display), thereby affecting the display effect. In addition, ITO is usually prepared by a sputtering process, which may cause some damage to the underlying thin film. In addition, since the light emitting device, particularly the OLED, is sensitive to water and oxygen, the top electrode needs to have certain resistance to water and oxygen, and the light emitting device needs to be strictly packaged. Thus, the prior art is in need of improvement and further development.
Disclosure of Invention
The invention aims to provide a top-emission type display panel, which aims to solve the problem that the performance and the service life of a light-emitting device are poor due to the fact that a top transparent electrode of an existing top-emission light-emitting device is difficult to achieve good conductivity and transparency at the same time.
Another object of the present invention is to provide a method for manufacturing a top emission type display panel.
The invention is realized in this way, a top-emission type display panel, which comprises a TFT array substrate, a light-emitting device arranged on the TFT array substrate and an encapsulation layer used for encapsulating the light-emitting device, wherein the light-emitting device is a top-emission light-emitting device and comprises a bottom electrode, a light-emitting layer and a top electrode which are sequentially arranged on the TFT array substrate; and a transparent conductive super-hydrophobic film is arranged on the top electrode.
And, a method for preparing a top emission type display panel, comprising the steps of:
providing a TFT array substrate;
manufacturing a light-emitting device on the TFT array substrate, wherein the light-emitting device is a top emission light-emitting device and comprises a bottom electrode, a light-emitting layer and a top electrode which are sequentially arranged on the TFT array substrate;
manufacturing a transparent conductive super-hydrophobic film on the top electrode;
and (5) carrying out packaging treatment.
According to the top emission type display panel provided by the invention, the transparent conductive super-hydrophobic film is arranged at the upper end of the top transparent electrode of the top emission light-emitting device. The introduction of the transparent conductive super-hydrophobic film can properly reduce the thickness of the top electrode on the premise of ensuring the conductive performance of the top electrode, thereby improving the light transmission of the whole top electrode. In addition, the transparent conductive super-hydrophobic film is covered on the outer surface of the top emission light-emitting device and has super-hydrophobicity, so that external moisture can be effectively prevented from permeating into the light-emitting device, and the service life of the light-emitting device is prolonged.
The preparation method of the top emission type display panel provided by the invention is simple and easy to control in operation, and is easy to realize industrial production of the display panel.
Drawings
Fig. 1 is a schematic structural diagram of a top emission type display panel provided in an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a TFT array substrate according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a TFT array substrate after a light emitting device is fabricated thereon according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram after a transparent conductive super-hydrophobic thin film is fabricated on a top electrode of a light-emitting device according to an embodiment of the present invention.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the following embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
With reference to fig. 1, an embodiment of the present invention provides a top emission type display panel, including a TFT array substrate 1, a light emitting device 2 disposed on the TFT array substrate 1, and an encapsulation layer 4 for encapsulating the light emitting device 2, where the light emitting device 2 is a top emission light emitting device, and includes a bottom electrode 21, a light emitting layer 22, and a top electrode 23 sequentially disposed on the TFT array substrate 1; and a transparent conductive super-hydrophobic film 3 is arranged on the top electrode 23.
Specifically, the TFT array substrate 1 has a TFT array for driving the light emitting device 2, and the TFT array substrate conventional in the art may be used in the embodiment of the present invention.
The light emitting device 2 according to the embodiment of the present invention may be an OLED or a QLED, and specifically, the light emitting device 2 includes a bottom electrode 21, a light emitting layer 22, and a top electrode 23 sequentially disposed on the TFT array substrate 1. Since the light emitting device 2 is a top emission light emitting device, the bottom electrode 21 is a reflective electrode for reflecting light emitted from the light emitting layer 22; the top electrode 23 is a transparent electrode, and light of the light emitting device 2 is emitted from the top electrode 23. In the embodiment of the present invention, the top electrode 23 is a transparent metal film, and specifically includes, but is not limited to, Mg, Al, Ag, or an alloy thereof. The light emitting layer 22 includes at least a light emitting layer, and preferably, in order to improve the light emitting efficiency of the light emitting device 2, the light emitting layer 22 further includes at least one of a hole injection layer, a hole transport layer, an electron blocking layer, a hole blocking layer, an electron transport layer, and an electron injection layer. In a preferred embodiment, the light-emitting layer 22 is a multi-layer stack including a hole injection layer, a hole transport layer, an electron blocking layer, a light-emitting layer, a hole blocking layer, an electron transport layer, and an electron injection layer. In the light-emitting layer 22, functional materials that are conventional in the art can be used for the functional layers.
In the embodiment of the invention, the transparent conductive super-hydrophobic film 3 is arranged on the top electrode 23 of the light-emitting device 2. The transparent conductive super-hydrophobic film 3 has good conductivity and super-hydrophobicity, so that the thickness of the top electrode 23 can be properly reduced on the premise of ensuring the conductivity of the top electrode 23, and the light transmittance of the whole top electrode 23 is further improved. As a preferred embodiment, the transparent conductive super-hydrophobic film 3 is formed by compounding conductive carbon nanotubes and hydrophobic resin. Wherein, the conductive carbon nano tube can provide good conductivity, and the hydrophobic resin provides super hydrophobicity. Further, since the contents of the conductive carbon nanotubes and the hydrophobic resin have a certain influence on the performance of the transparent conductive superhydrophobic film 3, specifically, if the content of the conductive carbon nanotubes is too low (the content of the conductive carbon nanotubes is relatively too high), the conductivity is not sufficient; when the content of the conductive carbon nanotubes reaches a certain level (the content of the conductive carbon nanotubes is relatively reduced), the conductivity of the transparent conductive super-hydrophobic film 3 is not greatly influenced, but the super-hydrophobicity of the transparent conductive super-hydrophobic film is influenced. Therefore, the mass percentage of the conductive carbon nanotubes is preferably 5 to 20% based on 100% of the total amount of the transparent conductive super-hydrophobic film 3. As another preferred embodiment, the thickness of the transparent conductive super-hydrophobic film 3 is 100-1000 nm. With too low a thickness, the transparent conductive superhydrophobic film 3 has a limited improvement in conductivity and superhydrophobicity.
Since the transparent conductive super-hydrophobic thin film 3 has good hydrophobicity, it can effectively inhibit moisture from penetrating into the light emitting device 2, thereby improving the service life thereof. In order to further improve the hydrophobicity of the transparent conductive super-hydrophobic film 3, the transparent conductive super-hydrophobic film 3 may be further optimized. As a specific preferred embodiment, the transparent conductive super-hydrophobic film 3 is a fluorinated hydrophobic treated transparent conductive super-hydrophobic film, and the fluorinated hydrophobic treated transparent conductive super-hydrophobic film 3 has better super-hydrophobicity. Further, the fluorinated hydrophobic treatment may employ CF4Plasma treatment is carried out. As another specific preferred embodiment, the transparent conductive superhydrophobic film 3 is a transparent conductive superhydrophobic film with a micro-nano structure on the surface (that is, the surface of the transparent conductive superhydrophobic film 3 is treated to form the micro-nano structure on the surface), so that the superhydrophobicity is enhanced.
The encapsulation layer 4 according to the embodiment of the present invention may adopt an encapsulation layer structure that is conventional in the art, and specifically, may be composed of an encapsulation cover plate 42 and a sealing frame 41.
According to the top emission type display panel provided by the embodiment of the invention, the transparent conductive super-hydrophobic film is arranged at the upper end of the top transparent electrode of the top emission light-emitting device. The introduction of the transparent conductive super-hydrophobic film can properly reduce the thickness of the top electrode on the premise of ensuring the conductive performance of the top electrode, thereby improving the light transmission of the whole top electrode. In addition, the transparent conductive super-hydrophobic film is covered on the outer surface of the top emission light-emitting device and has super-hydrophobicity, so that external moisture can be effectively prevented from permeating into the light-emitting device, and the service life of the light-emitting device is prolonged.
The top emission type display panel according to the embodiment of the invention may be prepared by the following method.
And, with reference to fig. 1 to 4, an embodiment of the present invention further provides a method for manufacturing a top emission type display panel, including the following steps:
s01, providing a TFT array substrate 1;
s02, manufacturing a light-emitting device 2 on the TFT array substrate 1, wherein the light-emitting device 2 is a top emission light-emitting device and comprises a bottom electrode 21, a light-emitting layer 22 and a top electrode 23 which are sequentially arranged on the TFT array substrate 1;
s03, manufacturing a transparent conductive super-hydrophobic film 3 on the top electrode 23 of the light-emitting device 2;
and S04, carrying out packaging treatment.
Specifically, as shown in fig. 2, in the step S01, the TFT array substrate 1 may be a TFT array substrate that is conventional in the art and has a TFT array for driving the light emitting device 2.
As shown in fig. 3, in the step S02, the method for manufacturing the light emitting device 2 on the TFT array substrate 1 can be realized by a conventional method. The light emitting device 2 may be an OLED or a QLED, and specifically, the light emitting device 2 includes a bottom electrode 21, a light emitting layer 22, and a top electrode 23 sequentially disposed on the TFT array substrate 1.
As shown in fig. 4, in step S03, a transparent conductive superhydrophobic film 3 is formed on the top electrode 23 of the light-emitting device 2, such that the transparent conductive superhydrophobic film 3 covers the surface of the top electrode 23, thereby improving conductivity and preventing moisture from penetrating.
In the step S04, the packaging process may adopt a packaging method conventional in the art. The structure of the top emission display panel obtained after the encapsulation process is shown in fig. 1.
The preparation method of the top emission type display panel provided by the embodiment of the invention is simple and easy to control in operation, and is easy to realize industrial production of the display panel.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (8)
1. The top emission type display panel is characterized by comprising a TFT array substrate, a light-emitting device arranged on the TFT array substrate and an encapsulation layer used for encapsulating the light-emitting device, wherein the light-emitting device is a top emission light-emitting device and comprises a bottom electrode, a light-emitting layer and a top electrode which are sequentially arranged on the TFT array substrate; the top electrode is a transparent electrode, a transparent conductive super-hydrophobic film is arranged on the top electrode, the transparent conductive super-hydrophobic film is a composite material layer formed by compounding conductive carbon nano tubes and hydrophobic resin, and the conductive carbon nano tubes account for 5-20% by mass of the total amount of the transparent conductive super-hydrophobic film being 100%.
2. The top emission type display panel according to claim 1, wherein the thickness of the transparent conductive super-hydrophobic film is 100-1000 nm.
3. The top emission type display panel according to claim 1, wherein the transparent conductive superhydrophobic film is a fluorinated hydrophobically treated transparent conductive superhydrophobic film.
4. The top emission type display panel of claim 3, wherein the fluorinated hydrophobic treatment employs CF4Plasma treatment is carried out.
5. The top emission type display panel according to any one of claims 1 to 4, wherein the surface of the transparent conductive superhydrophobic film has a micro-nano structure.
6. The top-emission type display panel according to any one of claims 1 to 4, wherein the light emitting device is an OLED or a QLED.
7. The top-emission type display panel according to any one of claims 1 to 4, wherein the light-emitting layer is a multilayer stack of a hole injection layer, a hole transport layer, an electron blocking layer, a light-emitting layer, a hole blocking layer, an electron transport layer, and an electron injection layer.
8. A preparation method of a top-emission display panel comprises the following steps:
providing a TFT array substrate;
manufacturing a light-emitting device on the TFT array substrate, wherein the light-emitting device is a top emission light-emitting device and comprises a bottom electrode, a light-emitting layer and a top electrode which are sequentially arranged on the TFT array substrate, and the top electrode is a transparent electrode;
manufacturing a transparent conductive super-hydrophobic film on the top electrode, wherein the transparent conductive super-hydrophobic film is a composite material layer formed by compounding conductive carbon nano tubes and hydrophobic resin, and the conductive carbon nano tubes account for 5-20% by mass based on 100% of the total amount of the transparent conductive super-hydrophobic film;
and (5) carrying out packaging treatment.
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| CN106784378A (en) * | 2016-12-29 | 2017-05-31 | 固安翌光科技有限公司 | Light-emitting device and its manufacture method |
| CN106848024A (en) * | 2017-02-20 | 2017-06-13 | 深圳市华星光电技术有限公司 | Luminescent device and display device |
| CN108123065B (en) * | 2017-12-15 | 2020-06-05 | 深圳市华星光电技术有限公司 | OLED display panel and packaging method thereof |
| CN109065753A (en) * | 2018-08-02 | 2018-12-21 | 京东方科技集团股份有限公司 | A kind of top light emitting-type OLED display panel and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1049752A (en) * | 1989-03-31 | 1991-03-06 | 东芝株式会社 | Nesa coating and the AC powder type electrolumnescent display panel and the LCD that adopt this nesa coating |
| CN102311672A (en) * | 2011-09-16 | 2012-01-11 | 无锡市顺业科技有限公司 | Superhydrophobic conductive coating and processing method thereof |
| CN104347671A (en) * | 2013-07-30 | 2015-02-11 | 三星显示有限公司 | Organic light-emitting display apparatus and method of manufacturing the same |
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| CN202145468U (en) * | 2011-05-06 | 2012-02-15 | 京东方科技集团股份有限公司 | Flexible organic electroluminescent device |
| KR102129035B1 (en) * | 2013-08-01 | 2020-07-02 | 삼성디스플레이 주식회사 | Organic light emitting display apparatus and the manufacturing method thereof |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1049752A (en) * | 1989-03-31 | 1991-03-06 | 东芝株式会社 | Nesa coating and the AC powder type electrolumnescent display panel and the LCD that adopt this nesa coating |
| CN102311672A (en) * | 2011-09-16 | 2012-01-11 | 无锡市顺业科技有限公司 | Superhydrophobic conductive coating and processing method thereof |
| CN104347671A (en) * | 2013-07-30 | 2015-02-11 | 三星显示有限公司 | Organic light-emitting display apparatus and method of manufacturing the same |
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