CN104022142A - Top emission AMOLED device with high aperture opening ratio and manufacturing method - Google Patents
Top emission AMOLED device with high aperture opening ratio and manufacturing method Download PDFInfo
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- CN104022142A CN104022142A CN201410260312.6A CN201410260312A CN104022142A CN 104022142 A CN104022142 A CN 104022142A CN 201410260312 A CN201410260312 A CN 201410260312A CN 104022142 A CN104022142 A CN 104022142A
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Abstract
The invention discloses a top emission AMOLED device with the high aperture opening ratio. A buffer layer is arranged on a glass substrate, an active layer and a grid electrode are formed on the buffer layer, a first insulation layer is arranged between the active layer and the grid electrode, a lower electrode is arranged on the first insulation layer, a second insulation layer covers the grid electrode, a contact hole is formed in the second insulation layer, a source electrode and a drain electrode are connected to the active layer through the contact hole, an upper electrode is arranged on the second insulation layer, a passivation layer covers the source electrode and the drain electrode, a pixel electrode covers the whole passivation layer, an organic light emitting layer covers the pixel electrode, and a cathode covers the organic light emitting layer. Due to the fact that a top emission device is adopted, emergent light is completely not blocked by a TFT area, the pixel electrode covers the whole substrate, a whole panel is made to emit light, the aperture opening ratio can reach more than 85 percent, the device can be kept in the same brightness under low current density, the service life of the device is prolonged, and the good light output coupling performance is guaranteed through the microcavity effect and a refractive index matching layer.
Description
Technical field
The present invention relates to ORGANIC ELECTROLUMINESCENCE DISPLAYS technical field, in particular to a kind of top transmitting AMOLED device and method for making with high aperture.
Background technology
Active matrix type organic light emitting diode (Active Matrix Organic Light Emitting Diode, abbreviation: AMOLED) device is a kind of New flat panel display part of following preparation large scale, high definition organic display equipment.AMOLED device adopts independently thin-film transistor (TFT) to go to control each pixel, and each pixel all can drive luminous continuously and independently.Typical AMOLED device has a switching TFT and a drive TFT in a pixel, switching TFT is used for namely gate drive voltage addressing of pixel voltage, the drive current of drive TFT control AMOLED device, device also needs a storage capacitance to maintain stable pixel voltage simultaneously.
Aperture opening ratio refers to remove light after wiring part, the transistor portion of each pixel by the ratio between area and the area of each pixel entirety of part.The light sending due to the AMOLED device (as Fig. 1) of end emission type can only be partly from driving the opening part that panel arranges to penetrate, and most of light is by TFT regional occlusion, and aperture opening ratio is lower, is only 30%-50%.And along with the raising of image resolution ratio, aperture opening ratio also can reduce, and is even down to below 10%.Aperture opening ratio is low, and the current density of the device that can cause flowing through is large, accelerates device aging, finally shortens the pixel life-span.
Summary of the invention
The present invention addresses the above problem, provide a kind of top emission type device that adopts to make emergent light not be subject to TFT regional occlusion completely, pixel capacitors covers on whole substrate substrate, and whole panel is luminous except barrier layer region, top transmitting AMOLED device and the method for making of the high aperture that all the other all can be luminous.
The top transmitting AMOLED device of high aperture of the present invention, comprises glass substrate, resilient coating, active layer, the first insulating barrier, bottom electrode, grid, the second insulating barrier, top electrode, source electrode, drain electrode, passivation layer, pixel capacitors, organic luminous layer, negative electrode, drain contact hole and storage capacitance, glass substrate is arranged on below, resilient coating is arranged on the top of glass substrate, resilient coating top forms and has active layer and grid successively, grid covers active layer, between active layer and grid, also has the first insulating barrier, the first insulating barrier top is also provided with bottom electrode, the second insulating barrier covers on grid, the second insulating layer exposing goes out the part of both sides active layer, form contact hole, source electrode and drain electrode are connected on active layer by contact hole, on the second insulating barrier, be also provided with top electrode, then passivation layer covers in source electrode and drain electrode, passivation layer exposes drain contact hole, pixel capacitors covers on passivation layer, organic luminous layer covers in pixel capacitors, negative electrode covers on organic luminous layer, bottom electrode and top electrode form storage capacitance.
Described pixel capacitors comprises Ag metal level and electroconductive ITO film composition, and electroconductive ITO film is on Ag metal level.
Described negative electrode comprises that, according to Al metal level, Ag metal level and AlQ film formation, Al metal level, Ag metal level and AlQ film formation are arranged in order.
A top transmitting AMOLED device method for making for high aperture, comprises the steps:
The first step, on glass substrate, form resilient coating;
Second step, then on resilient coating, form successively active layer, grid and the first insulating barrier, when forming grid, form the bottom electrode of storage capacitance;
The 3rd step, cover and comprise on the whole substrate substrate of grid with the second insulating barrier, expose both sides active layer part, form contact hole;
The 4th step, then generate source electrode and drain electrode, be then connected on active layer by contact hole, when forming source electrode and drain electrode, form the top electrode of storage capacitance;
The 5th step, on whole substrate, form a passivation layer that covers source electrode and drain electrode, passivation layer has the drain contact hole that exposes part drain electrode;
The 6th step, covering passivation layer form pixel capacitors, and pixel capacitors is arranged to anode;
The 7th step, organic light emission is deposited upon in pixel capacitors;
The 8th step, cathodic deposition are on organic luminous layer.
Pixel capacitors in described the 6th step in described the 6th step covers whole passivation layer substrate, first deposits then depositing electrically conductive ITO film thereon of Ag metal level on passivation layer, forms pixel capacitors.
On organic luminous layer in described the 8th step, depositing Al metal level, Ag metal level and AlQ film form negative electrode successively.
The top of high aperture of the present invention transmitting AMOLED device adopts top emission type device to make emergent light not be subject to TFT regional occlusion completely in sum, pixel capacitors covers on whole substrate substrate, whole panel is luminous except barrier layer region, all the other all can be luminous, aperture opening ratio can be up to more than 85%, make device under lower current density, maintain same brightness, improve device lifetime, and utilize microcavity effect and index matching layer to ensure good light output coupling performance.
Brief description of the drawings
Fig. 1 is the cross-sectional view of tradition end transmitting AMOLED device;
Fig. 2 is the cross-sectional view of the top transmitting AMOLED device of high aperture of the present invention.
Wherein, 1, glass substrate; 2, resilient coating; 3, active layer; 4, the first insulating barrier; 5, bottom electrode; 6, grid; 7, the second insulating barrier; 8, top electrode; 9, source electrode; 10, drain electrode; 11, passivation layer; 12, pixel capacitors; 13, organic luminous layer; 14, negative electrode; 15, drain contact hole; 16, storage capacitance.
Embodiment
Below in conjunction with accompanying drawing and specific embodiment, the invention will be further elaborated.
The top of high aperture of the present invention transmitting AMOLED device, comprises glass substrate 1, resilient coating 2, active layer 3, the first insulating barrier 4, bottom electrode 5, grid 6, the second insulating barrier 7, top electrode 8, source electrode 9, drain electrode 10, passivation layer 11, pixel capacitors 12, organic luminous layer 13, negative electrode 14, drain contact hole 15 and storage capacitance 16 as described in Figure 2, glass substrate 1 is arranged on below, resilient coating 2 is arranged on the top of glass substrate 1, resilient coating 2 tops form successively active layer 3 and grid 6, grid 6 covers active layer 3, between active layer 3 and grid 6, also has the first insulating barrier 4, the first insulating barrier 4 tops are also provided with bottom electrode 5, the second insulating barrier 7 covers on grid 6, the second insulating barrier 7 exposes the part of both sides active layer 3, form contact hole, source electrode 9 and drain electrode 10 are connected on active layer 3 by contact hole, on the second insulating barrier 7, be also provided with top electrode 8, then passivation layer 11 covers in source electrode 9 and drain electrode 10, passivation layer 11 exposes drain contact hole 15, pixel capacitors 12 covers on passivation layer 11, organic luminous layer 13 covers in pixel capacitors 12, negative electrode 14 covers on organic luminous layer 13, bottom electrode 5 and top electrode 8 form storage capacitance 16.Described pixel capacitors 12 comprises Ag metal level and electroconductive ITO film composition, and electroconductive ITO film is on Ag metal level.Described negative electrode 14 comprises according to Al metal level, Ag metal level and AlQ
3film forms, Al metal level, Ag metal level and AlQ
3film formation is arranged in order.
A top transmitting AMOLED device method for making for high aperture, comprises the steps:
The first step, on glass substrate 1, form resilient coating 2;
Second step, then on resilient coating 2, form successively active layer 3, grid 5 and the first insulating barrier 4, when forming grid 6, form the bottom electrode 5 of storage capacitance 16;
The 3rd step, cover and comprise on the whole substrate substrate of grid 6 with the second insulating barrier 7, expose both sides active layer 3 parts, form contact hole;
The 4th step, then generate source electrode 9 and drain electrode 10, be then connected on active layer 3 by contact hole, when forming source electrode 9 and drain electrode 10, form the top electrode 8 of storage capacitance 16;
The 5th step, form one cover source electrode 9 and drain electrode 10 passivation layer 11 on whole substrate, passivation layer 11 has the drain contact hole 15 that exposes part drain electrode 10;
The 6th step, covering passivation layer 11 form pixel capacitors 12, and pixel capacitors 12 is arranged to anode;
The 7th step, organic luminous layer 13 is deposited in pixel capacitors 12;
The 8th step, negative electrode 14 are deposited on organic luminous layer 13.
Pixel capacitors 12 in described the 6th step in described the 6th step covers whole passivation layer 11 substrates, first deposits then depositing electrically conductive ITO film thereon of Ag metal level on passivation layer 11, forms pixel capacitors 12.
Depositing Al metal level, Ag metal level and AlQ successively on organic luminous layer 13 in described the 8th step
3film forms negative electrode 14.
Pixel capacitors 12 is made up of total reflection Electrode Ag metal level and the electrically conducting transparent ITO film depositing on it, can make light penetrate from top device after Ag metal layer reflection.
Negative electrode 14 is by Al metal level, Ag metal level and AlQ
3film forms, Al/Ag composite cathode and index matching layer AlQ
3film has improved light transmission, reduces absorption loss water, and forms the micro-cavity structure of device with reflecting electrode Ag metal level, improves device light output efficiency and stability of photoluminescence.
Pixel capacitors in patent applied for just part covers passivation layer, can cause like this aperture opening ratio to decline, and takes all coverings and two methods of emission structure at top to improve aperture opening ratio herein
Those of ordinary skill in the art will appreciate that, embodiment described here is in order to help reader understanding's principle of the present invention, should be understood to that protection scope of the present invention is not limited to such special statement and embodiment.Those of ordinary skill in the art can make various other various concrete distortion and combinations that do not depart from essence of the present invention according to these technology enlightenments disclosed by the invention, and these distortion and combination are still in protection scope of the present invention.
Claims (6)
1. the top of a high aperture transmitting AMOLED device, is characterized in that: comprise glass substrate (1), resilient coating (2), active layer (3), the first insulating barrier (4), bottom electrode (5), grid (6), the second insulating barrier (7), top electrode (8), source electrode (9), drain electrode (10), passivation layer (11), pixel capacitors (12), organic luminous layer (13), negative electrode (14), drain contact hole (15) and storage capacitance (16), glass substrate (1) is arranged on below, resilient coating (2) is arranged on the top of glass substrate (1), resilient coating (2) top forms and has active layer (3) and grid (6) successively, grid (6) covers active layer (3), between active layer (3) and grid (6), also has the first insulating barrier (4), the first insulating barrier (4) top is also provided with bottom electrode (5), the second insulating barrier (7) covers on grid (6), the second insulating barrier (7) exposes the part of both sides active layer (3), form contact hole, source electrode (9) and drain electrode (10) are connected on active layer (3) by contact hole, on the second insulating barrier (7), be also provided with top electrode (8), then passivation layer (11) covers in source electrode (9) and drain electrode (10), passivation layer (11) exposes drain contact hole (15), pixel capacitors (12) covers on passivation layer (11), organic luminous layer (13) covers in pixel capacitors (12), negative electrode (14) covers on organic luminous layer (13), bottom electrode (5) and top electrode (8) form storage capacitance (16).
2. the top of high aperture as claimed in claim 1 transmitting AMOLED device, is characterized in that: described pixel capacitors (12) comprises Ag metal level and electroconductive ITO film composition, and electroconductive ITO film is on Ag metal level.
3. the top of high aperture as claimed in claim 1 transmitting AMOLED device, is characterized in that: described negative electrode (14) comprises according to Al metal level, Ag metal level and AlQ
3film forms, Al metal level, Ag metal level and AlQ
3film formation is arranged in order.
4. the top of a high aperture transmitting AMOLED device method for making, is characterized in that, comprises the steps:
The first step, at the upper resilient coating (2) that forms of glass substrate (1);
Second step, then on resilient coating (2), form successively active layer (3), grid (5) and the first insulating barrier (4), when forming grid (6), form the bottom electrode (5) of storage capacitance (16);
The 3rd step, cover and comprise on the whole substrate substrate of grid (6) with the second insulating barrier (7), expose both sides active layer (3) part, form contact hole;
The 4th step, then generate source electrode (9) and drain electrode (10), then be connected to active layer (3) by contact hole upper, when forming source electrode (9) and drain electrode (10), form the top electrode (8) of storage capacitance (16);
The 5th step, on whole substrate, form a passivation layer (11) that covers source electrode (9) and drain electrode (10), passivation layer (11) has the drain drain contact hole (15) of (10) of the part of exposure;
The 6th step, covering passivation layer (11) form pixel capacitors (12), and pixel capacitors (12) is arranged to anode;
The 7th step, organic luminous layer (13) is deposited in pixel capacitors (12);
The 8th step, negative electrode (14) are deposited on organic luminous layer (13).
5. the top of high aperture as claimed in claim 4 transmitting AMOLED device method for making, it is characterized in that: the pixel capacitors (12) in described the 6th step covers whole passivation layer (11) substrate, on passivation layer (11), first deposit then depositing electrically conductive ITO film thereon of Ag metal level, form pixel capacitors (12).
6. the top of high aperture as claimed in claim 4 transmitting AMOLED device method for making, is characterized in that: depositing Al metal level, Ag metal level and AlQ successively on the organic luminous layer (13) in described the 8th step
3film forms negative electrode (14).
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Cited By (3)
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| WO2020073596A1 (en) * | 2018-10-10 | 2020-04-16 | 深圳市华星光电半导体显示技术有限公司 | Display device and manufacturing method therefor |
| CN112466910A (en) * | 2020-11-04 | 2021-03-09 | 福建华佳彩有限公司 | Panel structure and preparation method of capacitor area structure thereof |
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| CN104022142B (en) | 2017-10-17 |
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