CN105593331B - 研磨用组合物 - Google Patents

研磨用组合物 Download PDF

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Publication number
CN105593331B
CN105593331B CN201480054190.3A CN201480054190A CN105593331B CN 105593331 B CN105593331 B CN 105593331B CN 201480054190 A CN201480054190 A CN 201480054190A CN 105593331 B CN105593331 B CN 105593331B
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CN
China
Prior art keywords
composition
polishing
acid
abrasive grain
grinding
Prior art date
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Active
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CN201480054190.3A
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English (en)
Chinese (zh)
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CN105593331A (zh
Inventor
玉田修
玉田修一
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Fujimi Inc
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Fujimi Inc
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Publication of CN105593331A publication Critical patent/CN105593331A/zh
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Publication of CN105593331B publication Critical patent/CN105593331B/zh
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
CN201480054190.3A 2013-09-30 2014-09-02 研磨用组合物 Active CN105593331B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013-204170 2013-09-30
JP2013204170A JP6113619B2 (ja) 2013-09-30 2013-09-30 研磨用組成物
PCT/JP2014/073076 WO2015045757A1 (ja) 2013-09-30 2014-09-02 研磨用組成物

Publications (2)

Publication Number Publication Date
CN105593331A CN105593331A (zh) 2016-05-18
CN105593331B true CN105593331B (zh) 2019-02-22

Family

ID=52742904

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480054190.3A Active CN105593331B (zh) 2013-09-30 2014-09-02 研磨用组合物

Country Status (8)

Country Link
US (1) US20160215170A1 (https=)
EP (1) EP3053979A4 (https=)
JP (1) JP6113619B2 (https=)
KR (1) KR102263486B1 (https=)
CN (1) CN105593331B (https=)
SG (1) SG11201601941SA (https=)
TW (1) TWI638883B (https=)
WO (1) WO2015045757A1 (https=)

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* Cited by examiner, † Cited by third party
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SG11201602264RA (en) * 2013-09-30 2016-05-30 Hoya Corp Silica abrasive particles, method for manufacturing silica abrasive particles, and method for manufacturing magnetic-disk glass substrate
CN108117839B (zh) * 2016-11-29 2021-09-17 安集微电子科技（上海）股份有限公司 一种具有高氮化硅选择性的化学机械抛光液
JP6811089B2 (ja) * 2016-12-26 2021-01-13 花王株式会社 シリコンウェーハ用研磨液組成物
EP3775076A4 (en) * 2018-03-28 2021-12-22 FUJIFILM Electronic Materials U.S.A, Inc. CHEMICAL-MECHANICAL BARRIER POLISHING MUD FOR RUTHENIUM
US10995238B2 (en) * 2018-07-03 2021-05-04 Rohm And Haas Electronic Materials Cmp Holdings Neutral to alkaline chemical mechanical polishing compositions and methods for tungsten
JP7219061B2 (ja) * 2018-11-14 2023-02-07 関東化学株式会社 ルテニウム除去用組成物
CN118439623A (zh) * 2019-02-21 2024-08-06 三菱化学株式会社 二氧化硅粒子及其制造方法、硅烷醇基的测定方法、研磨组合物、研磨方法、半导体晶片的制造方法和半导体器件的制造方法
JP7638667B2 (ja) * 2019-11-20 2025-03-04 株式会社フジミインコーポレーテッド 研磨組成物、研磨方法および基板の製造方法
CN115380097B (zh) * 2020-03-30 2024-06-14 福吉米株式会社 研磨用组合物
US12444617B2 (en) * 2020-08-07 2025-10-14 Tokuyama Corporation Semiconductor wafer processing liquid containing hypobromite ions and PH buffering agent
JP7663331B2 (ja) * 2020-09-23 2025-04-16 株式会社フジミインコーポレーテッド 研磨用組成物
JP7766536B2 (ja) * 2022-03-29 2025-11-10 株式会社フジミインコーポレーテッド 研磨用組成物およびこれを用いた研磨方法
KR102693377B1 (ko) * 2023-07-28 2024-08-09 한양대학교 산학협력단 무취의 실리콘 게르마늄 식각액 조성물 및 이를 이용한 식각 방법

Citations (6)

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Publication number Priority date Publication date Assignee Title
JP2000230170A (ja) * 1999-02-09 2000-08-22 Sharp Corp 貴金属の研磨のための化学的活性スラリーおよびその研磨方法
JP2001342456A (ja) * 2000-01-18 2001-12-14 Praxair St Technol Inc 研磨性スラリー
US6332831B1 (en) * 2000-04-06 2001-12-25 Fujimi America Inc. Polishing composition and method for producing a memory hard disk
JP2008264952A (ja) * 2007-04-23 2008-11-06 Shin Etsu Chem Co Ltd 多結晶シリコン基板の平面研磨加工方法
JP2010041029A (ja) * 2008-02-18 2010-02-18 Jsr Corp 化学機械研磨用水系分散体、化学機械研磨方法および化学機械研磨用水系分散体の製造方法
CN102017093A (zh) * 2008-03-05 2011-04-13 卡伯特微电子公司 使用水溶性氧化剂的碳化硅抛光方法

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US4944836A (en) 1985-10-28 1990-07-31 International Business Machines Corporation Chem-mech polishing method for producing coplanar metal/insulator films on a substrate
JP2004172326A (ja) 2002-11-20 2004-06-17 Hitachi Ltd 研磨用スラリー及び半導体装置の製造方法
TWI363796B (en) * 2004-06-14 2012-05-11 Kao Corp Polishing composition
US20070037892A1 (en) * 2004-09-08 2007-02-15 Irina Belov Aqueous slurry containing metallate-modified silica particles
JP4759298B2 (ja) * 2005-03-30 2011-08-31 株式会社フジミインコーポレーテッド 単結晶表面用の研磨剤及び研磨方法
US7678700B2 (en) 2006-09-05 2010-03-16 Cabot Microelectronics Corporation Silicon carbide polishing method utilizing water-soluble oxidizers
FR2912841B1 (fr) 2007-02-15 2009-05-22 Soitec Silicon On Insulator Procede de polissage d'heterostructures
US9028572B2 (en) * 2007-09-21 2015-05-12 Cabot Microelectronics Corporation Polishing composition and method utilizing abrasive particles treated with an aminosilane
DE102008059044B4 (de) 2008-11-26 2013-08-22 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe mit einer verspannt-relaxierten Si1-xGex-Schicht
US9382450B2 (en) * 2009-01-20 2016-07-05 Cabot Corporation Compositions comprising silane modified metal oxides
WO2011021599A1 (ja) * 2009-08-19 2011-02-24 日立化成工業株式会社 Ｃｍｐ研磨液及び研磨方法
JP2013084876A (ja) * 2011-09-30 2013-05-09 Fujimi Inc 研磨用組成物

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000230170A (ja) * 1999-02-09 2000-08-22 Sharp Corp 貴金属の研磨のための化学的活性スラリーおよびその研磨方法
JP2001342456A (ja) * 2000-01-18 2001-12-14 Praxair St Technol Inc 研磨性スラリー
US6332831B1 (en) * 2000-04-06 2001-12-25 Fujimi America Inc. Polishing composition and method for producing a memory hard disk
JP2008264952A (ja) * 2007-04-23 2008-11-06 Shin Etsu Chem Co Ltd 多結晶シリコン基板の平面研磨加工方法
JP2010041029A (ja) * 2008-02-18 2010-02-18 Jsr Corp 化学機械研磨用水系分散体、化学機械研磨方法および化学機械研磨用水系分散体の製造方法
CN102017093A (zh) * 2008-03-05 2011-04-13 卡伯特微电子公司 使用水溶性氧化剂的碳化硅抛光方法

Also Published As

Publication number Publication date
SG11201601941SA (en) 2016-04-28
CN105593331A (zh) 2016-05-18
JP6113619B2 (ja) 2017-04-12
TWI638883B (zh) 2018-10-21
WO2015045757A1 (ja) 2015-04-02
KR20160063331A (ko) 2016-06-03
TW201518490A (zh) 2015-05-16
US20160215170A1 (en) 2016-07-28
EP3053979A1 (en) 2016-08-10
KR102263486B1 (ko) 2021-06-11
EP3053979A4 (en) 2016-11-09
JP2015067752A (ja) 2015-04-13

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