CN105590930B - 一种新能源车用igbt功率模块 - Google Patents

一种新能源车用igbt功率模块 Download PDF

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CN105590930B
CN105590930B CN201610070303.XA CN201610070303A CN105590930B CN 105590930 B CN105590930 B CN 105590930B CN 201610070303 A CN201610070303 A CN 201610070303A CN 105590930 B CN105590930 B CN 105590930B
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igbt
power module
chip
thick copper
cooling
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CN105590930A (zh
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刘志强
张功
文彦东
苏瑞涛
赵慧超
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FAW Group Corp
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Abstract

本发明涉及了一种新能源车用IGBT功率模块，由IGBT芯片、Diode芯片、厚铜缓冲垫块、功率端子、信号端子、冷却基板、导热绝缘层和树脂注模组成，所述IGBT芯片和二极管芯片通过焊料层与厚铜缓冲垫块相连，厚铜缓冲垫块通过焊料层与厚铜功率端子相连，实现功率连接，厚铜功率端子通过导热绝缘层与冷却基板相连，树脂注模之后形成IGBT功率模块。IGBT功率模块通过双面布置单端针脚或是单端翅片的冷却基板实现功率模块双面直接液冷，提高功率模块的强制散热能力；通过缓冲垫块实现芯片与厚铜功率端子连接，增加芯片散热热容，提高芯片极限工况抗热冲击能力；通过内置绝缘导热片，消除外置绝缘片接触不良或振动掉落引起热阻增加造成模块性能下降或模块损坏。

Description

一种新能源车用IGBT功率模块
技术领域
本发明涉及功率半导体封装以及功率模块领域，特别涉及一种新能源车用新型封装结构的大功率IGBT功率模块。
背景技术
面对日益枯竭的石油资源以及环境保护的巨大压力，新能源车显示了巨大优势和广阔的发展前景。
新能源车的快速发展，带动了车用逆变器的快速应用。车用逆变器中的关键核心部件是IGBT功率模块，该模块通过开关动作实现电功率变换，将直流电变换为交流电，或将交流电变换为直流电。
IGBT(Insulated Gate Bipolar Transistor)，绝缘栅双极型晶体管，是由BJT(双极型三极管)和MOS(绝缘栅型场效应管)组成的复合全控型电压驱动式功率半导体器件,兼有MOSFET的高输入阻抗和GTR的低导通压降两方面的优点。GTR饱和压降低，载流密度大，但驱动电流较大；MOSFET驱动功率很小，开关速度快，但导通压降大，载流密度小。IGBT综合了以上两种器件的优点，驱动功率小而饱和压降低。非常适合应用于直流电压为600V及以上的变流系统如交流电机、变频器、开关电源、照明电路、牵引传动等领域。
IGBT模块是由IGBT(绝缘栅双极型晶体管芯片)与FWD(续流二极管芯片)通过特定的电路桥接封装而成的模块化半导体产品；封装后的IGBT模块直接应用于变频器、UPS不间断电源等设备上。
车用逆变器中的IGBT功率模块不光有高性能的要求，还有高环境适应性的要求。高性能要求模块体积小、功率密度高；高环境适应性要求模块能在高压、大电流、高温、强振和瞬变工况下可靠运行，即对模块的功率循环、温度循环和振动性能有较高要求。为达到以上要求，IGBT功率模块必须在冷却散热，以及功率连接等方面设计强化或设计改进。车用IGBT功率模块是随着新能源车应用而出现的，它与工业用IGBT功率模块在电气原理上是一样的，但由于应用环境不同(高温、强振等恶劣环境)，由此需要在结构上针对恶劣环境做特殊处理，如强化散热等。
前期车用模块，即IGBT功率模块，在冷却散热方面普遍采用单面间接液冷，虽然之后也有单面直接液冷和双面间接液冷方式的改进，模块功率密度有所提升，但面对整车越来越小的布置空间还有些捉襟见肘；前期车用模块在功率连接方面普遍采用绑定线，这种连接方式在稳定工况应用比较稳定，但在车用瞬变工况下失效率提高，影响车用可靠性；前期车用模块在衬板选材方面普遍采用DBC(覆铜板)，这种材料热阻小，导热性好，但由于生产工艺导致覆铜层薄，这就造成热容小，IGBT在瞬变工况抗冲击能力变差。
专利201210182350.5(发明名称：一种针对电动汽车应用的IGBT功率模块)中描述了一种IGBT功率模块结构，该模块采用单面直接液冷散热、绑定线功率连接和DBC衬板散热，该结构与工业应用比虽已强化，但在整车紧凑化用和耐瞬变抗冲击能力方面还有劣势(是否有对比数据)。
专利02159368.X(发明名称：半导体功率器件)中描述了一种IGBT功率模块结构包括半导体芯片(12)、第一散热片(13)、第二散热片(14)、和模制树脂(17)，该模块采用双面间接液冷、直接铜绑定功率连接和无DBC衬板结构，该结构虽在散热、连接方面都提升很高，但增加了系统装配难度，同时在装配中需增加散热片，外置散热片在装配中的由于装配不当将导致接触热阻增加，降低IGBT功率模块输出性能。
针对上述问题，新能源车用新型封装结构的IGBT功率模块成为迫切的需求。
发明内容
为了解决上述问题，本发明的目的是提供一种新能源车用IGBT功率模块，其通过双面直接水冷实现强散热和高功率密度、通过与芯片连接的厚铜缓冲垫块增大热容实现抗瞬变冲击，同时通过内置导热绝缘层降低了安装难度，提高装配效率。
本发明的新能源车用IGBT功率模块，由厚铜功率端子、冷却基板、焊料层、厚铜缓冲垫块、绑定线、Diode(二极管)芯片、IGBT(绝缘栅双极型晶体管)芯片、导热绝缘层、冷却基板和模制树脂组成，IGBT(绝缘栅双极型晶体管)芯片和Diode(二极管)芯片通过焊料层与厚铜缓冲垫块相连，厚铜缓冲垫块通过焊料层与厚铜功率端子相连，实现功率连接，厚铜功率端子通过导热绝缘层与冷却基板相连，由模制树脂形成IGBT功率模块。
焊料层可采用银浆、SnAgCu或SnAg等焊料，以符合无铅要求，同时可保证较高的抗疲劳连接强度。
厚铜缓冲垫块减缓IGBT芯片和Diode芯片随厚铜功率端子的膨胀，以及调整芯片焊接之后的高度，保证与厚铜功率端子焊接之后水平，厚铜缓冲垫块需采用与芯片膨胀系数接近的材料，如铜钼合金。
冷却基板可采用单面针脚或单面翅片的铜或铝等高散热金属基板，针脚可采用圆柱、菱形柱等形状，增加散热面积提高散热。
IGBT功率模块通过树脂压铸形成整体，内部可通过电路连接实现单管、半桥封装或是全桥封装。
所述厚铜功率端子连接二极管芯片和IGBT芯片，所述IGBT芯片通过绑定线与信号端子连接。
所述的IGBT功率模块，通过冷却下底板、冷却下底板密封垫以及冷却上盖板、冷却上盖板密封垫冷却。
本发明的积极效果：本发明的目的在于提供一种新能源车用新型封装的IGBT功率模块，其可以实现强散热、抗冲击性强和高功率密度，同时降低了安装工艺。本发明通过双面布置单端针脚或是单端翅片的冷却基板实现功率模块双面直接液冷，提高功率模块的强制散热能力；通过缓冲垫块实现芯片与厚铜功率端子连接，增加芯片散热热容，提高芯片极限工况抗热冲击能力；通过内置绝缘导热片，消除外置绝缘导热片接触不良或振动掉落引起热阻增加造成模块性能下降或模块损坏。
附图说明
图1所示为IGBT功率模块剖视图。
图2为与IGBT功率模块内部关键组件布置图。
图3为IGBT功率模块的冷却布置图。
(附图标记说明)
1-厚铜功率端子、2-冷却基板、3-焊料层、4-厚铜缓冲垫块、5-焊料层、6-焊料层7-厚铜缓冲垫块、8-绑定线、9-导热绝缘层、10-厚铜功率端子、11-Diode(二极管)芯片、12-焊料层、13-厚铜缓冲垫块、14-焊料层、15-焊料层、16-IGBT(绝缘栅双极型晶体管)芯片、17-厚铜缓冲垫块、18-焊料层、19-焊料层、20-导热绝缘层、21-冷却基板、22-模制树脂23-信号端子、24-信号端子、25-信号端子、26-冷却上盖板、27-冷却上盖板密封垫、28-冷却上盖板密封垫29-冷却下底板、30-冷却下底板密封垫、31-冷却下底板密封垫、8-A绑定线、8-B绑定线
具体实施方式
以下将结合附图对本发明技术方案做进一步的阐述。
如图1IGBT功率模块剖视图所示，IGBT功率模块由如下几部分构成：厚铜功率端子1、冷却基板2、焊料层3、厚铜缓冲垫块4、焊料层5、焊料层6、厚铜缓冲垫块7、绑定线8、导热绝缘层9、厚铜功率端子10、Diode(二极管)芯片11、焊料层12、厚铜缓冲垫块13、焊料层14、焊料层15、IGBT(绝缘栅双极型晶体管)芯片16、厚铜缓冲垫块17、焊料层18、焊料层19、导热绝缘层20、冷却基板21和模制树脂22组成。
IGBT(绝缘栅双极型晶体管)芯片16和Diode(二极管)芯片11通过焊料层3、5、6、12、15、18与厚铜缓冲垫块4、7、13、17相连，厚铜缓冲垫块13、17通过焊料层14、19与厚铜功率端子10相连，实现功率连接，厚铜功率端子1、10通过导热绝缘层9、20与冷却基板2、21相连，树脂注模形成模制树脂22之后形成IGBT功率模块。
所述焊料层，采用银浆、SnAgCu或SnAg焊料。
所述厚铜缓冲垫块，采用与芯片膨胀系数接近的材料，如铜钼合金。
所述冷却基板，单面针脚或单面翅片。
所述树脂注模，通过树脂压铸将其成为一个整体。
IGBT芯片和二极管芯片，2个并联或多个并联。
IGBT功率模块为单管封装、半桥封装或三相全桥封装，通过内部电路连接。
如图2IGBT功率模块内部关键组件布置图，IGBT功率模块关键组件由如下几部分构成：厚铜功率端子10、厚铜功率端子1、Diode(二极管)芯片11-A、Diode(二极管)芯片11-B、IGBT(绝缘栅双极型晶体管)16-A、IGBT(绝缘栅双极型晶体管)16-B、绑定线9-A、绑定线9-B、信号端子23、信号端子24和信号端子25。
如图3IGBT功率模块的冷却布置方案图，冷却布置方案由如下几部分构成：冷却下底板29、冷却下底板密封垫30、冷却下底板密封垫31、冷却上盖板26、冷却上盖板密封垫27和冷却上盖板密封垫28。
IGBT功率模块中的Diode(芯片)11一面通过焊料层5与厚铜缓冲垫块4连接，厚铜缓冲垫块4再通过焊料层3与厚铜功率端子1连接，最后厚铜功率端子1通过导热绝缘层9与冷却基板2连接；Diode(芯片)11的另一面通过焊料层12与厚铜缓冲垫块13连接，厚铜缓冲垫块13再通过焊料层14与厚铜功率端子10连接，最后厚铜功率端子10通过导热绝缘层20与冷却基板21连接。
IGBT功率模块中的IGBT(绝缘栅双极型晶体管)芯片16一面通过焊料层15与厚铜缓冲垫块7连接，厚铜缓冲垫块7再通过焊料层6与厚铜功率端子1连接，最后厚铜功率端子1通过导热绝缘层9与冷却基板2连接；IGBT(绝缘栅双极型晶体管)芯片16的另一面通过焊料层18与厚铜缓冲垫块17连接，厚铜缓冲垫块17再通过焊料层19与厚铜功率端子10连接，最后厚铜功率端子10通过导热绝缘层20与冷却基板21连接。
IGBT(绝缘栅双极型晶体管)芯片16-A和16-B的栅极驱动信号通过绑定线8-A和8-B与信号端子23连接，结合信号端子24、信号端子25实现控制信号驱动和关键信号采样。
IGBT功率模块最终通过模制树脂22封装成IGBT功率模块模块，IGBT功率模块内部封装的IGBT(绝缘栅双极型晶体管)芯片16和Diode(二极管)芯片11数量可通过芯片并联满足不同性能需求。
IGBT功率模块采用双面液冷冷却方式，IGBT功率模块与冷却下底板29通过冷却下底板密封垫30和冷却下底板密封垫31相连，达到冷却液密封的目的，同理，IGBT功率模块与冷却上盖板26通过冷却上盖板密封垫27和冷却上盖板密封垫28。
厚铜缓冲垫块形状与芯片大小一致，厚度按保证厚铜功率端子焊接之后水平进行调整。厚度还需试制样件试验。
所述冷却板是金属的，一般是铜板，用于散热；所述冷却垫片一般是非导电，强导热的材料，如陶瓷片。
以上通过具体实施方式对本发明进行了详细的说明，该实施方式仅仅是本发明的较佳实例，不应理解为对本发明的限制，任何依据本发明的原理所做的更改都应在本发明的保护范围之内。

Claims (10)

1.一种新能源车用IGBT功率模块，其特征在于：由IGBT芯片、二极管芯片、厚铜缓冲垫块、厚铜功率端子、信号端子、冷却基板、导热绝缘层和模制树脂组成，
所述IGBT芯片和所述二极管芯片通过焊料层与所述厚铜缓冲垫块相连，所述厚铜缓冲垫块通过所述焊料层与所述厚铜功率端子相连，所述厚铜功率端子通过所述导热绝缘层与所述冷却基板相连，由模制树脂形成IGBT功率模块。
2.根据权利要求1所述的IGBT功率模块，其特征在于：所述焊料层，采用银浆、SnAgCu或SnAg焊料。
3.根据权利要求1所述的IGBT功率模块，其特征在于：
所述厚铜缓冲垫块，采用与芯片膨胀系数接近的材料。
4.根据权利要求1所述的IGBT功率模块，其特征在于：
所述冷却基板，采用单面针脚或单面翅片的铜基板或铝基板。
5.根据权利要求1所述的IGBT功率模块，其特征在于：
通过树脂注模形成模制树脂，所述树脂注模，通过树脂压铸将其成为一个整体。
6.根据权利要求1所述的IGBT功率模块，其特征在于：
所述IGBT芯片和所述二极管芯片，2个并联或多个并联。
7.根据权利要求1的IGBT功率模块，其特征在于：
IGBT功率模块为单管封装、半桥封装或三相全桥封装，通过内部电路连接。
8.根据权利要求4所述的IGBT功率模块，其特征在于：
所述针脚采用圆柱或菱形柱形状。
9.根据权利要求1所述的IGBT功率模块，其特征在于：
所述厚铜功率端子连接二极管芯片和IGBT芯片，所述IGBT芯片通过绑定线与信号端子连接。
10.根据权利要求1所述的IGBT功率模块，其特征在于：
所述的IGBT功率模块，通过冷却下底板、冷却下底板密封垫以及冷却上盖板、冷却上盖板密封垫冷却。
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