CN105590651A - DRAM (dynamic random access memory) neutron single event effect test method - Google Patents

Abstract

The invention provides a DRAM (dynamic random access memory) neutron single event effect test method. The DRAM neutron single event effect test method comprises the steps of S1, configuring the DRAM, writing an initial value in the DRAM, and performing backward reading on the writing value in the DRAM to obtain a first backward reading result; S2, performing irradiation, after first preset fluence is irradiated, performing backward reading on the writing value in the DRAM to obtain a second backward reading result; and comparing the second backward reading result with the first backward reading result to make statistics on the number of occurred errors; and S3, repeatedly performing the step S2, and stopping the test until the statistical number of the occurred errors achieves a preset number of errors or the total fluence of the current irradiation achieves a second preset fluence. The DRAM neutron single event effect test method can perform test on the DRAM neutron single event effect, and the accuracy of the test result can be improved.

Description

DRAM neutron single particle effect test method

Technical field

The present invention relates to single particle effect experimental technique field, relate in particular to a kind of DRAM neutronSingle particle effect test method.

Background technology

DRAM (DynamicRandomAccessMemory, dynamic random access memory)Be the key core device of air environment, such device is in the flying height of 3km～20kmThe high energy that can run into about every square centimeter of 300～18000 1MeV～1000MeV per hour is largeGas neutron, produces single particle effect, brings out air environment generation atmospheric neutron single-particle softMistake and hard fault, bring potential safety hazard to air environment.

For improving the security of air environment, need to imitate DRAM neutron single-particle in advanceShould test, the neutron of domestic current employing 14MeV energy carries out ground face mould to DRAMIntend test, to obtain responsive cross-section data, in order to ensure the science correctness that obtains result of the test,How effectively DRAM neutron single particle effect to be tested is urgently to be resolved hurrily asking at presentTopic.

Summary of the invention

(1) technical problem that will solve

The technical problem to be solved in the present invention is to provide a kind of DRAM neutron single particle effect testMethod, can effectively test DRAM neutron single particle effect.

(2) technical scheme

For solving the problems of the technologies described above, technical scheme of the present invention provides a kind of DRAM neutronSingle particle effect test method, comprising:

S1: configuration DRAM writes initial value, DRAM described in retaking of a year or grade in described DRAMIn the value of writing obtain the first retaking of a year or grade result;

S2: carry out irradiation, after the default fluence of irradiation first, writing in DRAM described in retaking of a year or gradeEnter value and obtain the second retaking of a year or grade result, by the second retaking of a year or grade result and the first retaking of a year or grade result comparison, statisticsThe wrong number occurring;

S3: repeating step S2 until the wrong number that statistics occurs reach default wrong number or work asTotal injection rate of pre irradiation stops test while reaching the second default fluence.

Further, described default wrong number is the arbitrary value between 90～110.

Further, described the second default fluence is 10⁸n/cm²～10¹⁰n/cm²Between appointMeaning value.

Further, in step S2, after the default fluence of irradiation first, also comprise:

Record the current power consumption electric current of described DRAM, and whether judge described current power consumption electric currentExceed default static current of lcd scope.

Further, in step S2, after the default fluence of irradiation first, also comprise:

Record the work at present voltage of described DRAM, and whether judge described work at present voltageExceed default operating voltage range.

(3) beneficial effect

The DRAM neutron single particle effect test method that embodiment of the present invention provides, by inciting somebody to actionRetaking of a year or grade result after irradiation is compared with the retaking of a year or grade result of predose, and statistics obtains the mistake occurringNumber, reaches the second default fluence until wrong number reaches default wrong number or total injection rateIn time, stops testing, thereby can effectively test DRAM neutron single particle effect, carriesThe accuracy of high its result of the test.

Brief description of the drawings

Fig. 1 is a kind of DRAM neutron single particle effect test side that embodiment of the present invention providesThe flow chart of method.

Detailed description of the invention

Below in conjunction with drawings and Examples, the specific embodiment of the present invention is done further in detailDescribe. Following examples are used for illustrating the present invention, but are not used for limiting the scope of the invention.

Fig. 1 is a kind of DRAM neutron single particle effect test side that embodiment of the present invention providesThe flow chart of method, comprising:

S1: configuration DRAM writes initial value, DRAM described in retaking of a year or grade in described DRAMIn the value of writing obtain the first retaking of a year or grade result;

S2: carry out irradiation, after the default fluence of irradiation first, writing in DRAM described in retaking of a year or gradeEnter value and obtain the second retaking of a year or grade result, by the second retaking of a year or grade result and the first retaking of a year or grade result comparison, statisticsThe wrong number occurring;

S3: repeating step S2 until the wrong number that statistics occurs reach default wrong number or work asTotal injection rate of pre irradiation stops test while reaching the second default fluence. Wherein, described secondDefault fluence is greater than the first default fluence.

Wherein, described default wrong number is the arbitrary value between 90～110, and for example, this is defaultWrong number can be 100.

Wherein, described the second default fluence is 10⁸n/cm²～10¹⁰n/cm²Between arbitrary value,For example, this second default fluence can be 10⁹n/cm²。

Preferably, in step S2, after the default fluence of irradiation first, also comprise:

Record the current power consumption electric current of described DRAM, and whether judge described current power consumption electric currentExceed default static current of lcd scope.

Preferably, in step S2, after the default fluence of irradiation first, also comprise:

Record the work at present voltage of described DRAM, and whether judge described work at present voltageExceed default operating voltage range.

Particularly, before test, need connect testing equipment, particularly, by makingCorresponding DRAM emulator is connected with corresponding device (as CPU, FPGA, DSP), can be rightDRAM on testpieces conducts interviews, and the USB mouth of emulator is through USB extended line (25Rice) be connected with the USB interface on computer, and be configured with initialization operation etc., then openBegin DRAM to test, and carry out data comparison, particularly, comprising: A: first writeEnter configuration file, DRAM is configured, write initial value, then this DRAM is enteredRow retaking of a year or grade, and preserve and obtain the first retaking of a year or grade result, writing task voltage and power consumption electricity simultaneouslyStream, B: start irradiation, be irradiated to after the first default fluence, suspend irradiation, writing task electricityPress and static current of lcd, retaking of a year or grade DRAM obtains the second retaking of a year or grade result, with the first retaking of a year or grade of predoseResult comparison, the wrong number that statistics occurs; C: in the time that reaching 100, wrong number stops irradiation,If there is no 100 mistakes, repeat B step, until fluence reaches 10⁹N (individual)/cm²Time stop irradiation, for example, can write 0x55 data at DRAM part address space, and look intoSee and whether successfully to write 55 data, start to carry out irradiation, after certain interval of time, by writingEnter the address area and 55 of 55 data relatively, check that the figure place of upset obtains the wrong number occurring.

The DRAM neutron single particle effect test method that embodiment of the present invention provides, by inciting somebody to actionRetaking of a year or grade result after irradiation is compared with the retaking of a year or grade result of predose and is added up the mistake that obtains generationNumber, reaches the second default fluence until wrong number reaches default wrong number or total injection rateIn time, stops testing, thereby can effectively test DRAM neutron single particle effect, carriesThe accuracy of high its result of the test.

Above embodiment is only for the present invention is described, and limitation of the present invention is not relevantThe those of ordinary skill of technical field, without departing from the spirit and scope of the present invention,Can also make a variety of changes and modification, therefore all technical schemes that are equal to also belong to the present inventionCategory, scope of patent protection of the present invention should be defined by the claims.

Claims (5)

1. a DRAM neutron single particle effect test method, is characterized in that, comprising:

S1: configuration DRAM writes initial value, DRAM described in retaking of a year or grade in described DRAMIn the value of writing obtain the first retaking of a year or grade result;

S2: carry out irradiation, after the default fluence of irradiation first, writing in DRAM described in retaking of a year or gradeEnter value and obtain the second retaking of a year or grade result, by the second retaking of a year or grade result and the first retaking of a year or grade result comparison, statisticsThe wrong number occurring;

S3: repeating step S2 until the wrong number that statistics occurs reach default wrong number or work asTotal injection rate of pre irradiation stops test while reaching the second default fluence.

2. DRAM neutron single particle effect test method according to claim 1, itsBe characterised in that, described default wrong number is the arbitrary value between 90～110.

3. DRAM neutron single particle effect test method according to claim 1, itsBe characterised in that, described the second default fluence is 10⁸n/cm²～10¹⁰n/cm²Between arbitrary value.

4. DRAM neutron single particle effect test method according to claim 1, itsBe characterised in that, in step S2, after the default fluence of irradiation first, also comprise:

Record the current power consumption electric current of described DRAM, and whether judge described current power consumption electric currentExceed default static current of lcd scope.

5. DRAM neutron single particle effect test method according to claim 1, itsBe characterised in that, in step S2, after the default fluence of irradiation first, also comprise:

Record the work at present voltage of described DRAM, and whether judge described work at present voltageExceed default operating voltage range.