CN105576950A - Dynamic regulation apparatus for driving signal and driving method and driving system thereof - Google Patents

Dynamic regulation apparatus for driving signal and driving method and driving system thereof Download PDF

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Publication number
CN105576950A
CN105576950A CN201511031761.4A CN201511031761A CN105576950A CN 105576950 A CN105576950 A CN 105576950A CN 201511031761 A CN201511031761 A CN 201511031761A CN 105576950 A CN105576950 A CN 105576950A
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oxide
pull
semiconductor
metal
drop
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CN201511031761.4A
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CN105576950B (en
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张钦阳
詹桦
洪益文
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Hangzhou Silan Microelectronics Co Ltd
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Hangzhou Silan Microelectronics Co Ltd
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/44—Circuits or arrangements for compensating for electromagnetic interference in converters or inverters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
    • H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
    • H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
    • H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
    • H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/33538—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only of the forward type
    • H02M3/33546—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only of the forward type with automatic control of the output voltage or current
    • H02M3/33553—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only of the forward type with automatic control of the output voltage or current with galvanic isolation between input and output of both the power stage and the feedback loop

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Electronic Switches (AREA)

Abstract

The invention provides a dynamic regulation apparatus for a driving signal. The driving signal is used for driving an MOS switch tube to be switched on and switched off; the dynamic regulation apparatus comprises a pull-up MOS tube, a pull-down MOS tube and a controlled voltage source module, wherein a gate end receives a pull-up control signal used for controlling the gate end to be switched on and switched off; one of a source end and a drain end is coupled to a power supply voltage end while the other one of the source end and the drain end is coupled to a gate end of the MOS switch tube; the gate end receives a pull-down control signal used for controlling the gate end to be switched on and switched off; one of the source end and the drain end is coupled to a circuit ground end while the other one of the source end and the drain end is coupled to the gate end of the MOS switch tube; the controlled voltage source module is used for providing controlled voltage to the gate end of the pull-down MOS tube to enable the gate-source voltage of the pull-down MOS tube to be elevated to the power supply voltage at a dynamically adjustable speed when the pull-down MOS tube is started by the pull-down control signal, so as to drive the MOS switch tube to be switched on and switched off with variable driving capabilities.

Description

For the dynamic adjustments device of drive singal and driving method thereof and drive system
Technical field
The present invention relates to the Driving technique in Switching Power Supply, particularly relate to for the dynamic adjustments device of drive singal and driving method thereof and drive system.
Background technology
At present, in the power output off-line type AC-DC translation circuit such as medium and small, former limit controls (primarysideregulation, PSR) inverse-excitation type variator adopts elementary feedback control technology, eliminate the feedback of light isolation and the Secondary Control circuit at traditional design, simplified design, is widely used in fields such as household electrical appliances.
Fig. 1 is that typical former limit controls inverse-excitation type AC-DC transfer circuit system structure chart.As shown in Figure 1, varying circuit comprises off-line type AC-DC Drive and Control Circuit and peripheral circuit.
See Fig. 1, general drive circuit 101 comprises output detections module and Ton (ON time)/Toff (turn-off time) control module.Output detections module, mainly through detecting the feedback signal of auxiliary winding, obtains the information such as output voltage, demagnetization time, ON time, input voltage.Ton/Toff control module to output voltage and output current analysis according to output detections module, by changing Ton and the Toff time, producing the drive singal of driven MOS FET switch pipe M1, realizing the function exporting constant voltage, output constant current.
This off-line type AC-DC converter circuit comprises rectifier circuit (diode VD1, diode VD2, diode VD3, diode VD4 forms), (Np is the primary inductance number of turn for filter capacitor C1, transformer, Ns is the secondary inductance number of turn, and Naux is the auxiliary winding inductance number of turn), export rectifier diode VD5, output filter capacitor C2, feedback divider resistance R3 and R2, sampling resistor RS, switch mosfet pipe (hereinafter referred to as MOS switching tube) M1 and drive circuit 101.
Fig. 2 is typical BUCK type switching circuit, mainly comprises peripheral components and the drive circuits such as inductance, electric capacity, resistance.Specifically, BUCK converter circuit comprises magnetizing inductance L1, input filter capacitor C1 as shown in Figure 2, rectifier diode D1, output filter capacitor C2, sampling resistor R1, R2 and drive circuit 102.Drive circuit 102 generally comprises output detections module and Ton/Toff control module.Output detections module obtains output information by R1 and R2 to output voltage sampling.Ton/Toff control module spends change Ton and Toff time, produces the drive singal of driven MOS switching tube M1, realizes the function exporting constant voltage, output constant current.
In above-mentioned Switching Power Supply transfer circuit system, MOS switching tube M1, as switching device, exists and changes change in voltage faster, and larger switching loss.Optimization process is not done to the driving of MOS switching tube M1, more unmanageable EMI (electromagnetic interference) can be caused, lower average efficiency, and larger stand-by power consumption.
Summary of the invention
Below provide the brief overview of one or more aspect to provide the basic comprehension to these aspects.Detailed the combining of this not all aspect contemplated of general introduction is look at, and both not intended to be pointed out out the scope of key or decisive any or all aspect of elements nor delineate of all aspects.Its unique object is the sequence that some concepts that will provide one or more aspect in simplified form think the more detailed description provided after a while.
According to an aspect of the present invention, provide a kind of dynamic adjustments device for drive singal, this drive singal is used for the switch of driven MOS switching tube, and this dynamic adjustments device comprises:
Pull-up metal-oxide-semiconductor, gate terminal receives pull-up control signal for controlling its conducting or shutoff, and the one end in source terminal and drain electrode end is coupled to power voltage terminal, and the other end is coupled to the gate terminal of this MOS switching tube,
Drop-down metal-oxide-semiconductor, gate terminal receives drop-down control signal for controlling its conducting or shutoff, and the one end in source terminal and drain electrode end is held with being coupled to circuit, and the other end is coupled to the gate terminal of this MOS switching tube, and
Controlled voltage source module, at this drop-down metal-oxide-semiconductor when being opened by this drop-down control signal, gate terminal to this drop-down metal-oxide-semiconductor provides controlled voltage to rise to supply voltage to make the gate source voltage of this drop-down metal-oxide-semiconductor with dynamically adjustable speed, thus drives the shutoff of this MOS switching tube with variable driving force.
In one example, loading condition is heavier, then the controlled voltage change that provides to the gate terminal of this drop-down metal-oxide-semiconductor of this controlled voltage source module is more slow, the speed of supply voltage is risen to the gate source voltage of the drop-down metal-oxide-semiconductor that slows down, thus reduction driving force, and loading condition is lighter, and the controlled voltage change that this controlled voltage source module provides to the gate terminal of this drop-down metal-oxide-semiconductor is faster, rise to the speed of supply voltage with the gate source voltage accelerating this drop-down metal-oxide-semiconductor, thus improve driving force.
In one example, this controlled voltage source circuit comprises:
Drop-down charge and discharge capacitance, between the gate terminal being coupled in this drop-down metal-oxide-semiconductor and source terminal; And
Dynamic current generation module, the charging and discharging currents of size variation is dynamically generated for the loading condition based on this MOS switching tube, the output of this dynamic current generation module is coupled to the gate terminal of this drop-down metal-oxide-semiconductor, with when this drop-down metal-oxide-semiconductor is opened, by the discharge and recharge to this drop-down charge and discharge capacitance, the grid to this drop-down metal-oxide-semiconductor provides controlled voltage.
In one example, this dynamic current generation module generates less charging and discharging currents under heavier loading condition, the speed of supply voltage is risen to the gate source voltage of this drop-down metal-oxide-semiconductor that slows down, and under lighter loading condition, generate larger charging and discharging currents, the speed of supply voltage is risen to the gate source voltage accelerating drop-down metal-oxide-semiconductor.
In one example, pull-down current switching tube is provided with to control the break-make of this charging and discharging currents between the gate terminal of this drop-down metal-oxide-semiconductor and this dynamic current generation module, the gate terminal of this pull-down current switching tube is coupled to this drop-down control signal, with when this drop-down control signal controls this drop-down metal-oxide-semiconductor conducting, make this pull-down current switching tube conducting to provide charging and discharging currents to the gate terminal of this drop-down metal-oxide-semiconductor.
In one example, this controlled voltage source circuit also comprises drop-down reset switch pipe, one end in the source terminal of this drop-down reset switch pipe and drain electrode end is coupled to the gate terminal of this drop-down MOS switching tube, the other end is coupled to power voltage terminal when this drop-down metal-oxide-semiconductor is PMOS and holds with being coupled to circuit when this drop-down metal-oxide-semiconductor is NMOS tube, and this drop-down reset switch pipe has the conducting contrary with this pull-down current switching tube or off state.
In one example, the one end in the source terminal of this pull-down current switching tube and drain electrode end is coupled to the output of this dynamic current generation module, and the other end is coupled to the gate terminal of this drop-down metal-oxide-semiconductor.
In one example, this controlled voltage source circuit also comprises pull-down current mirror circuit, this dynamic current generation module is coupled to the gate terminal of this drop-down metal-oxide-semiconductor via this pull-down current mirror circuit, and this pull-down current switching tube is coupled to this pull-down current mirror circuit to control the break-make of this pull-down current mirror circuit.
In one example, this pull-down current mirror circuit comprises:
First current lens unit, the mirror image input of this first current lens unit couples the output of this dynamic current generation module; And
Second current lens unit, the mirror image input of this second current lens unit is coupled to the mirror output of this first current lens unit via this pull-down current switching tube, the mirror output of this second current lens unit is coupled to the gate terminal of this drop-down metal-oxide-semiconductor.
In one example, this controlled voltage source circuit also comprises:
Supplemental current generation module, for generating supplemental current;
Supplemental current switching tube, the output of this supplemental current generation module is coupled to the gate terminal of this drop-down metal-oxide-semiconductor via this supplemental current switching tube, this supplemental current switching tube in the opening process of this drop-down metal-oxide-semiconductor when this MOS switching tube grid voltage change time conducting to provide supplemental current to the gate terminal of this drop-down metal-oxide-semiconductor, to accelerate the change of the gate source voltage of this drop-down metal-oxide-semiconductor.
In one example, this supplemental current switching tube and this drop-down metal-oxide-semiconductor are all NMOS tube, and the gate terminal of this supplemental current switching tube is coupled to the gate terminal of this drop-down metal-oxide-semiconductor via inverter, to control the break-make of this supplemental current switching tube.
In one example, this dynamic adjustments device also comprises:
Turn off analysis circuit, its input is coupled to the gate terminal of this MOS switching tube, to detect the grid voltage of this MOS switching tube, output is coupled to the gate terminal of this supplemental current switching tube, to open this supplemental current switching tube when the grid voltage of this MOS switching tube changes, and turn off this supplemental current switching tube when the grid voltage of this MOS switching tube is constant.
In one example, this turn off analysis circuit comprises:
Comparator, the first input end of this comparator is coupled to the gate terminal of this MOS switching tube, and the second input is coupled to the gate terminal of this MOS switching tube simultaneously via capacity earth via resistance, and output is coupled to the gate terminal of this supplemental current switching tube.
In one example, this supplemental current generation module comprises:
Mirror image circuit, for the mirror image of this charging and discharging currents that this dynamic current generation module is generated to the gate terminal of this drop-down metal-oxide-semiconductor to provide this supplemental current.
In one example, this controlled voltage source module at this pull-up metal-oxide-semiconductor when being opened by this pull-up control signal, gate terminal to this pull-up metal-oxide-semiconductor provides controlled voltage to rise to supply voltage to make the gate source voltage of this pull-up metal-oxide-semiconductor with dynamically adjustable speed, thus drives the unlatching of this MOS switching tube with variable driving force.
In one example, loading condition is heavier, then the controlled voltage change that provides to the gate terminal of this pull-up metal-oxide-semiconductor of this controlled voltage source module is more slow, the speed of supply voltage is risen to the gate source voltage of the pull-up metal-oxide-semiconductor that slows down, thus reduction driving force, and loading condition is lighter, and the controlled voltage change that this controlled voltage source module provides to the gate terminal of this pull-up metal-oxide-semiconductor is faster, rise to the speed of supply voltage with the gate source voltage accelerating this pull-up metal-oxide-semiconductor, thus improve driving force.
In one example, this controlled voltage source circuit comprises:
Pull-up charge and discharge capacitance, between the gate terminal being coupled in this pull-up metal-oxide-semiconductor and source terminal; And
Dynamic current generation module, the charging and discharging currents of size variation is dynamically generated for the loading condition based on this MOS switching tube, the output of this dynamic current generation module is coupled to the gate terminal of this pull-up metal-oxide-semiconductor, with when this pull-up metal-oxide-semiconductor is opened, by the discharge and recharge to this pull-up charge and discharge capacitance, the grid to this pull-up metal-oxide-semiconductor provides controlled voltage.
In one example, this dynamic current generation module generates less charging and discharging currents under heavier loading condition, the speed of supply voltage is risen to the gate source voltage of this pull-up metal-oxide-semiconductor that slows down, and under lighter loading condition, generate larger charging and discharging currents, the speed of supply voltage is risen to the gate source voltage accelerating pull-up metal-oxide-semiconductor.
In one example, pull-up current switching tube is provided with to control the break-make of this charging and discharging currents between the gate terminal of this pull-up metal-oxide-semiconductor and this dynamic current generation module, the gate terminal of this pull-up current switching tube is coupled to this pull-up control signal, during to control this pull-up metal-oxide-semiconductor conducting in this pull-up control signal, make this pull-up current switching tube conducting to provide charging and discharging currents to the gate terminal of this pull-up metal-oxide-semiconductor.
In one example, this controlled voltage source circuit also comprises pull-up reset switch pipe, one end in the source terminal of this pull-up reset switch pipe and drain electrode end is coupled to the gate terminal of this pull-up MOS switching tube, the other end is coupled to power voltage terminal when this pull-up metal-oxide-semiconductor is PMOS and holds with being coupled to circuit when this pull-up metal-oxide-semiconductor is NMOS tube, and this pull-up reset switch pipe has the conducting contrary with this pull-up current switching tube or off state.
In one example, the one end in the source terminal of this pull-up current switching tube and drain electrode end is coupled to the output of this dynamic current generation module, and the other end is coupled to the gate terminal of this pull-up metal-oxide-semiconductor.
In one example, this controlled voltage source circuit also comprises pull-up current mirror circuit, this dynamic current generation module is coupled to the gate terminal of this pull-up metal-oxide-semiconductor via this pull-up current mirror circuit, and this pull-up current switching tube is coupled to this pull-up current mirror circuit to control the break-make of this pull-up current mirror circuit.
In one example, this pull-up current mirror circuit comprises:
3rd current lens unit, the mirror image input of the 3rd current lens unit couples the output of this dynamic current generation module; And
4th current lens unit, the mirror image input of the 4th current lens unit is coupled to the mirror output of the 3rd current lens unit via this pull-up current switching tube, the mirror output of the 4th current lens unit is coupled to the gate terminal of this pull-up metal-oxide-semiconductor.
In one example, this dynamic current generation module comprises:
Error amplifier, one input end receives COMP voltage, and another input is coupled to its output, and output is by grounding through resistance, and wherein this COMP voltage and load weight condition are inversely proportional to; And
Current mirroring circuit, the output of this error amplifier is coupled to the input of this current mirroring circuit to export this charging and discharging currents from this current mirroring circuit.
According to a further aspect in the invention, provide a kind of drive system, comprising:
MOS switching tube;
As above for the dynamic adjustments device of drive singal; And
Drive circuit, for generating this pull-up control signal and drop-down control signal.
In accordance with a further aspect of the present invention, provide a kind of driving method of the dynamic adjustments device for drive singal, this drive singal is used for the switch of driven MOS switching tube, this dynamic adjustments device comprises: pull-up metal-oxide-semiconductor, gate terminal receives the pull-up control signal for controlling its conducting or shutoff, one end in source terminal and drain electrode end is coupled to power voltage terminal, and the other end is coupled to the gate terminal of this MOS switching tube; And drop-down metal-oxide-semiconductor, gate terminal receives drop-down control signal for controlling its conducting or shutoff, and the one end in source terminal and drain electrode end is held with being coupled to circuit, and the other end is coupled to the gate terminal of this MOS switching tube,
This driving method comprises:
When this drop-down metal-oxide-semiconductor is opened by this drop-down control signal, gate terminal to this drop-down metal-oxide-semiconductor provides controlled voltage to rise to supply voltage to make the gate source voltage of this drop-down metal-oxide-semiconductor with dynamically adjustable speed, thus drives the shutoff of this MOS switching tube with variable driving force.
In one example, when loading condition is heavier, the controlled voltage change provided to the gate terminal of this drop-down metal-oxide-semiconductor is more slow, the speed of supply voltage is risen to the gate source voltage of the drop-down metal-oxide-semiconductor that slows down, thus reduction driving force, and when loading condition is lighter, the controlled voltage change that the gate terminal to this drop-down metal-oxide-semiconductor provides is faster, rise to the speed of supply voltage with the gate source voltage accelerating this drop-down metal-oxide-semiconductor, thus improve driving force.
In one example, be provided with drop-down charge and discharge capacitance between the gate terminal of this drop-down metal-oxide-semiconductor and source terminal, wherein this gate terminal to this drop-down metal-oxide-semiconductor provides controlled voltage to comprise:
Loading condition based on this MOS switching tube dynamically generates the charging and discharging currents of size variation, and with when this drop-down metal-oxide-semiconductor is opened, by the discharge and recharge to this drop-down charge and discharge capacitance, the grid to this drop-down metal-oxide-semiconductor provides controlled voltage.
In one example, less charging and discharging currents is generated under heavier loading condition, the speed of supply voltage is risen to the gate source voltage of this drop-down metal-oxide-semiconductor that slows down, and under lighter loading condition, generate larger charging and discharging currents, the speed of supply voltage is risen to the gate source voltage accelerating drop-down metal-oxide-semiconductor.
In one example, the method also comprises:
Supplemental current is provided, to accelerate the change of the gate source voltage of this drop-down metal-oxide-semiconductor when the grid voltage change of this MOS switching tube to the gate terminal of this drop-down metal-oxide-semiconductor in the opening process of this drop-down metal-oxide-semiconductor.
In one example, the method also comprises:
When this pull-up metal-oxide-semiconductor is opened by this pull-up control signal, gate terminal to this pull-up metal-oxide-semiconductor provides controlled voltage to rise to supply voltage to make the gate source voltage of this pull-up metal-oxide-semiconductor with dynamically adjustable speed, thus drives the unlatching of this MOS switching tube with variable driving force.
In one example, when loading condition is heavier, the controlled voltage change provided to the gate terminal of this pull-up metal-oxide-semiconductor is more slow, the speed of supply voltage is risen to the gate source voltage of the pull-up metal-oxide-semiconductor that slows down, thus reduction driving force, and when loading condition is lighter, the controlled voltage change that the gate terminal to this pull-up metal-oxide-semiconductor provides is faster, rise to the speed of supply voltage with the gate source voltage accelerating this pull-up metal-oxide-semiconductor, thus improve driving force.
In one example, between the gate terminal and source terminal of this pull-up metal-oxide-semiconductor, be provided with pull-up charge and discharge capacitance, wherein this gate terminal to this pull-up metal-oxide-semiconductor provides controlled voltage to comprise:
Loading condition based on this MOS switching tube dynamically generates the charging and discharging currents of size variation, and with when this pull-up metal-oxide-semiconductor is opened, by the discharge and recharge to this pull-up charge and discharge capacitance, the grid to this pull-up metal-oxide-semiconductor provides controlled voltage.
In one example, less charging and discharging currents is generated under heavier loading condition, the speed of supply voltage is risen to the gate source voltage of this pull-up metal-oxide-semiconductor that slows down, and under lighter loading condition, generate larger charging and discharging currents, the speed of supply voltage is risen to the gate source voltage accelerating pull-up metal-oxide-semiconductor.
According to the solution of the present invention, at different output states, due to the change of dynamic current IbiasD, the rate of change in controlled linear voltage source also changes.When upper frequency, dynamic current IbiasD is less, and the rate of change in controlled linear voltage source is little, and the conducting resistance change of pull-up and drop-down MOSFET is slow, and in switching process, dv/dt change is slow, and EMI performance is good.When frequency is lower, dynamic current IbiasD is larger.The rate of change of controlled linear voltage source is large, and the conducting resistance change of pull-up and drop-down MOSFET is fast, postpones little, hands over more loss to reduce.
Accompanying drawing explanation
After the detailed description of reading embodiment of the present disclosure in conjunction with the following drawings, above-mentioned feature and advantage of the present invention can be understood better.In the accompanying drawings, each assembly is not necessarily drawn in proportion, and the assembly with similar correlation properties or feature may have identical or close Reference numeral.
Fig. 1 shows the circuit diagram of typical off-line type AC-DC change-over circuit;
Fig. 2 shows the circuit diagram of typical BUCK change-over circuit;
Fig. 3 shows the schematic diagram of traditional gate driving scheme;
Fig. 4 shows the schematic diagram of another traditional gate driving scheme;
Fig. 5 shows the equivalent analysis circuit diagram of typical MOSFET pipe;
The schematic diagram of the switching waveform time MOS switching tube that Fig. 6 shows traditional fixed drive ability is opened;
The schematic diagram of switching waveform time the MOS switching tube that Fig. 7 shows traditional fixed drive ability turns off;
Fig. 8 show according to an aspect of the present invention the schematic diagram of grid dynamic driving;
Fig. 9 show according to an aspect of the present invention the schematic diagram of grid dynamic driving;
The schematic diagram of switching waveform time Figure 10 MOS switching tube with dynamic driving ability showed according to an aspect of the present invention is opened;
The schematic diagram of switching waveform time Figure 11 MOS switching tube with dynamic driving ability showed according to an aspect of the present invention turns off;
Figure 12 shows the schematic diagram carrying out dynamic driving according to frequency load according to an aspect of the present invention;
Figure 13 shows the dynamic driver circuit figure for pull-up PMOS according to an aspect of the present invention;
Figure 14 shows the dynamic driver circuit figure for pull-up NMOS tube according to an aspect of the present invention;
Figure 15 shows the dynamic driver circuit figure for pull-down NMOS pipe according to an aspect of the present invention;
Figure 16 shows the dynamic driver circuit figure for pull-up PMOS according to one embodiment of the invention;
Figure 17 shows the dynamic driver circuit figure for pull-down NMOS pipe according to one embodiment of the invention;
Figure 18 shows the dynamic driver circuit figure for pull-up NMOS tube and pull-down NMOS pipe according to one embodiment of the invention;
Figure 19 shows the schematic diagram of switching waveform when turning off according to the MOS switching tube with dynamic driving ability of an embodiment;
Figure 20 shows the dynamic driver circuit figure for pull-up NMOS tube and pull-down NMOS pipe according to another embodiment of the present invention;
Figure 21 shows the schematic diagram of switching waveform when turning off according to the MOS switching tube with dynamic driving ability of another embodiment; And
Figure 22 shows the schematic diagram according to dynamic current of the present invention and load frequency relation.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is described in detail.Note, the aspects described below in conjunction with the drawings and specific embodiments is only exemplary, and should not be understood to carry out any restriction to protection scope of the present invention.
Traditional gate driving scheme is difficult to balance in electromagnetic interference EMI and drive efficiency.EMI along with load increase the weight of serious gradually.Now, often need to reduce driving force to improve EMI.But the drive scheme with lower driving force no doubt can alleviate EMI when heavier loads, however when load is lighter EMI problem itself not serious, now lower driving force have impact on drive efficiency.On the other hand, if improve driving force to pursue efficiency, then when heavier loads, EMI problem can be made more outstanding.
Fig. 3 and Fig. 4 shows the schematic diagram of traditional gate driving scheme.Drive scheme shown in Fig. 3 comprises pull-up metal-oxide-semiconductor and drop-down metal-oxide-semiconductor, and the pull-up metal-oxide-semiconductor in figure is PMOS (referred to as pull-up PMOS), and drop-down metal-oxide-semiconductor is NMOS tube (referred to as pull-down NMOS pipe).Pull-up PMOS is connected to supply voltage VCC, and pull-down NMOS pipe is (GND) with being connected to circuit.Drive circuit 401 produces control signal S pand S ncarry out driven MOS switching tube M1.
When the conducting of pull-up PMOS, pull-down NMOS pipe turn off, open MOS switching tube M1; When the shutoff of pull-up PMOS, pull-down NMOS pipe conducting, turn off MOS switching tube M1.
The driving force of drive circuit is relevant with drive current when pull-up metal-oxide-semiconductor and drop-down metal-oxide-semiconductor conducting, in other words, relevant with the conducting resistance of pull-up metal-oxide-semiconductor and drop-down metal-oxide-semiconductor, because conducting resistance is larger, drive current is less, and driving force is more weak, otherwise conducting resistance is less, drive current is larger, and driving force is larger.
Because the conducting resistance of PMOS and NMOS tube is comparatively large with technique change, pull-up PMOS and the pull-down NMOS pipe of large-size can be adopted.In order to improve EMI, need to reduce driving force, because this increasing Rp and Rn two resistance to increase conducting resistance, to reduce the object of drive current and then realization reduction driving force.Fig. 4 shows this scheme.This scheme improves the conducting resistance of pull-up metal-oxide-semiconductor and drop-down metal-oxide-semiconductor by fixing resistance Rp and Rn.But as mentioned above, when load is comparatively light, when EMI problem is not outstanding, higher conducting resistance result in lower driving force.
Fig. 5 shows typical MOSFET equivalent analysis circuit.In optimization Switching Power Supply, the optimization of MOSFET is mainly from the parasitic structure of self, and parasitic parameter determines the switch performance of MOSFET.The parasitism of Fig. 6 mainly comprises following content: grid level resistance R g, the parasitic capacitance C of grid end and source gS, the parasitic capacitance C of grid end and drain terminal gD, drain terminal resistance R d, source side resistance R sR, the parasitic capacitance C of drain terminal and source dS, and parasitic diode D.The parasitic parameter R of MOSFET g, C gD, C gSsize determine its switching speed.When parasitic parameter is certain, the drive current of grid level determines the switching speed of MOSFET, this theoretical foundation being regulated drive current by conducting resistance and then regulated driving force in Fig. 4 just.
For the conventional gate drive scheme in Fig. 3, the switching characteristic of MOS switching tube is described below in conjunction with Fig. 6 and Fig. 7.Fig. 6 shows the work wave of the inverse-excitation type variator under discontinuous mode, in order to the switch conduction characteristic of MOS switching tube to be described.I in Fig. 6 lfor the electric current of MOS switching tube from drain terminal to source, S nand S pbe respectively the control signal of pull-down NMOS pipe and pull-up PMOS, VGS is the voltage waveform of drive end, and VDS is the drain terminal of MOS switching tube and the waveform of source, and Rds_PMOS is the conducting resistance of pull-up PMOS.When conducting, the impedance of pull-up PMOS is very little, very large when closedown.
In the t0 moment, produce start signal by logic, drop-down control signal S nfrom high to low, S ncontrol pull-down NMOS pipe turns off.By certain unlatching Dead Time (t0 ~ t1), the pull-up control signal S when t1 pcontrol pull-up PMOS, make its conducting.Because the PMOS of conducting exists fixing conducting resistance Rds_PMOS, so there is certain opening process.
The conducting of typical MOS switching tube is divided into 3 stages, and t1 ~ t2 (open and postpone) is for VGS is from 0 to Vth stage, and drive current mainly gives parasitic capacitance C gScharging.This MOS switching tube is still in off state, VDS and I lwaveform is constant.VDS magnitude of voltage is by the turn ratio of transformer, and the parameters such as input voltage determine, can be 300V.I lbecause non-On current is 0.T2 ~ t3 is that VGS remains unchanged the stage, and drive current mainly gives parasitic capacitance C dScharging.This stage is also Miller platform, and due to the conducting of MOS switching tube, VDS starts to turn to low-voltage from high-voltage variable, and the slope dv/dt that VDS declines is primarily of parasitic capacitance C dSdetermine with Rds_PMOS.This process due to the existence of drain terminal parasitic capacitance over the ground, I lform peak current, for the variator of peak value comparison method, generally can shield this peak current owing to easily producing erroneous judgement to peak current.T3 ~ t4 stage, drive current continued to C in order to open final stage gScharging, MOS switch tube voltage is changed to VCC near vth, and peak current rises with fixing slope, and its slope is determined by input voltage and transformer inductance.
Through as above three phases, MOS switching tube starts conducting.In t2 ~ t3 stage, due to voltage, to change to from VDS (such as 300V) speed being close to 0 very fast, and general about 100ns, so can cause EMI problem.In open stage, the voltage VDS of MOS switching tube can be seen and and flow through the electric current I of MOS switching tube lhand over area to be more 0 substantially, so loss is less, now subject matter is the problem of EMI.
As shown in Figure 6, because driving force is by the constraint of fixing conducting resistance Rds_PMOS, in order to obtain good EMI, only has the conducting resistance that employing is larger, such as, increase resistance Rp shown in Fig. 4.Now, although can EMI be reduced, larger unlatching is had to postpone.Although loss is less, also this partition losses can be increased.And comparatively light in load, when EMI problem is not given prominence to, larger unlatching postpones there is no need.
The switch OFF characteristic of MOS switching tube can set forth explanation by Fig. 7.In the t5 moment, peak current I lreach desirable peak current, in the t6 moment, pull-up control signal S pcontrol pull-up PMOS, make it turn off, drop-down control signal S ncontrol pull-down NMOS pipe, make it open.Because the NMOS tube of conducting exists fixing conducting resistance Rds_NMOS, so there is certain turn off process.
In the t5 moment, when electric current reaches peak current, start to turn off at t6 moment MOS switching tube, t5 ~ t6 is for turning off Dead Time.The shutoff of typical MOS switching tube is divided into 4 time periods, and t6 ~ t7 belongs to turn-off delay, is MOS switching tube grid step voltage VGS decline stage first time.The VGS voltage of the MOS switching tube in this stage drops to from VCC (the Vth+I that overdrives mOSFET/ g mOSFET), the required time is by grid capacitance and drive resistance Rds_NMOS to determine, can be reduced to the RC circuit of one-level.This stage is due to parasitic capacitance C gSexistence, also can there is a bit little decline in the VCS waveform being coupled to current sample end.T7 ~ t8 is that VGS remains unchanged the stage, is also referred to as and turns off Miller platform, and now drive current mainly gives parasitic capacitance C dScharging.This stage and t2 ~ t3 similar, due to the conducting of NMOS tube, VDS starts to be changed to high voltage from low-voltage, VDS rise slope dv/dt primarily of parasitic capacitance C dSdetermine with Rds_NMOS.T8 ~ t9 is the second segment fall time of VGS, is to turn off final stage, drops to threshold voltage vth, this stage peak current I from overdrive voltage lelectric current drops to zero.After t9, VGS is changed to 0 from vth.Can analyze and obtain handing over more loss to exist in t7 ~ t9 time period.
Similarly, in the off-phases of MOS switching tube, because driving force is by the constraint of fixing conducting resistance Rds_NMOS, in order to obtain good EMI, only have the conducting resistance that employing is larger, such as, increase resistance Rn as illustrated in fig. 4.Although can reduce EMI, have larger unlatching to postpone, hand over more loss to increase, larger delay simultaneously there is no need completely when underloading, because bring larger peak current, stand-by power consumption is increased.
In the present invention, provide one dynamically drive scheme, when heavier loads, reduce driving force, to reduce EMI problem, on the other hand, when load is lighter, improve driving force, reduce switching delay to improve switching speed.As mentioned above, when the parameter of MOS switching tube is certain, driving force is relevant with the conducting resistance of pull-up metal-oxide-semiconductor and drop-down metal-oxide-semiconductor.Therefore, when opening pull-up metal-oxide-semiconductor and drop-down metal-oxide-semiconductor, by making gate source voltage absolute value | VGS| gradually becomes VCC from 0 makes conducting resistance reduce gradually, such as PMOS, make gate terminal voltage from VCC gradual change to 0, for NMOS tube, make gate terminal voltage from 0 gradual change to VCC.
For NMOS tube, work as heavier loads, when needing to reduce driving force, gate terminal voltage can be made to rise to VCC with slower speed from 0, thus make conducting resistance step-down gradually in the process, with the conducting resistance making NMOS tube remain higher in opening procedure, play reduction drive current, reduce the effect of driving force.When load is lighter, EMI problem is not given prominence to, therefore wish have faster switching speed time, gate terminal voltage can be made to rise to VCC with speed faster from 0, thus make conducting resistance be reduced to minimum quickly, to make NMOS tube have lower conducting resistance in opening procedure, play increase drive current, promote the effect of driving force.
Therefore, by regulating the pace of change of the grid voltage of pull-up metal-oxide-semiconductor and/or drop-down metal-oxide-semiconductor, the size of driving force is dynamically regulated.
Fig. 8 shows the schematic diagram according to grid dynamic driving of the present invention, particularly illustrates the situation that pull-up metal-oxide-semiconductor is PMOS.As shown in the figure, compared to traditional raster data model, add controlled voltage source module between pull-up PMOS and drive circuit, this controlled voltage source module is used for being pulled up control signal S in pull-up PMOS pduring unlatching, the gate terminal to pull-up PMOS provides controlled voltage to rise to supply voltage to make the gate source voltage of pull-up PMOS with dynamically adjustable speed, thus with the unlatching of variable driving force driven MOS switching tube M1.
Loading condition is heavier, the controlled voltage change that this controlled voltage source module provides to the gate terminal of this pull-up NMOS tube is more slow, the speed of supply voltage is risen to the gate source voltage of the pull-up NMOS tube that slows down, thus reduction driving force, and loading condition is lighter, the controlled voltage change that controlled voltage source module upwards draws the gate terminal of NMOS tube to provide is faster, rises to the speed of supply voltage, thus improve driving force with the gate source voltage accelerating pull-up metal-oxide-semiconductor.Here controlled voltage source, upper trombone slide, lower trombone slide constitute the dynamic adjustments device for drive singal of the present invention.
As shown in Figure 8, this controlled voltage source comprises two switch S 1 and S2, charge and discharge capacitance C, and dynamic current source I.S2 controls the charging to electric capacity C, and S1 controls the electric discharge to electric capacity C.Discharge process C1 voltage changes to 0 from VCC, produces the voltage source V of linear change in the gate terminal of pull-up PMOS dRIVER_P, the resistance of pull-up PMOS close to linear from large resistance variations be small resistor.
Here, by the size of current Ib iasD regulating dynamic current source I to provide, pull-up PMOS becomes small resistor speed from large resistance just can be controlled, i.e. driving force during the unlatching of control MOS switching tube M1.
Note, electric capacity C here can be additional electric capacity, also can be the parasitic capacitance of pull-up PMOS.
Fig. 9 shows the schematic diagram according to grid dynamic driving of the present invention, particularly illustrates the situation that pull-up metal-oxide-semiconductor is NMOS tube.As shown in the figure, compared to traditional raster data model, add controlled voltage source module between pull-up NMOS tube and drive circuit, this controlled voltage source module is used for being pulled up control signal S in pull-up NMOS tube pduring unlatching, the gate terminal to pull-up NMOS tube provides controlled voltage to rise to supply voltage to make the gate source voltage of pull-up NMOS tube with dynamically adjustable speed, thus with the unlatching of variable driving force driven MOS switching tube 1.
Loading condition is heavier, the controlled voltage change that this controlled voltage source module provides to the gate terminal of this pull-up NMOS tube is more slow, the speed of supply voltage is risen to the gate source voltage of the pull-up NMOS tube that slows down, thus reduction driving force, and loading condition is lighter, the controlled voltage change that controlled voltage source module upwards draws the gate terminal of NMOS tube to provide is faster, rises to the speed of supply voltage, thus improve driving force with the gate source voltage accelerating pull-up metal-oxide-semiconductor.Here controlled voltage source, upper trombone slide, lower trombone slide constitute the dynamic adjustments device for drive singal of the present invention.
As shown in Figure 9, this controlled voltage source comprises two switch S 1 and S2, charge and discharge capacitance C, and dynamic current source I.S2 controls the charging to electric capacity C, and S1 controls the electric discharge to electric capacity C.Charging process C1 voltage changes to VCC from 0, produces the voltage source V of linear change in the gate terminal of pull-up NMOS tube dRIVER_N, the resistance of pull-up NMOS tube close to linear from large resistance variations be small resistor.
Here, by the size of current Ib iasD regulating dynamic current source I to provide, pull-up NMOS tube becomes small resistor speed from large resistance just can be controlled, i.e. driving force during the unlatching of control MOS switching tube M1.
Note, electric capacity C here can be additional electric capacity, also can be the parasitic capacitance of pull-up NMOS tube.
Fig. 8 and Fig. 9 illustrate only the dynamic driving for pull-up metal-oxide-semiconductor, and the dynamic driving principle for drop-down metal-oxide-semiconductor is identical with pull-up metal-oxide-semiconductor, therefore not shown.Dynamic driving can only be applied to pull-up metal-oxide-semiconductor with the unlatching of dynamic driving MOS switching tube, only for drop-down metal-oxide-semiconductor with the shutoff of dynamic driving MOS switching tube or be applied to pull-up metal-oxide-semiconductor and drop-down metal-oxide-semiconductor with both the unlatching of dynamic driving MOS switching tube and turning off simultaneously.
Switching waveform when Figure 10 and Figure 11 shows the switching waveform when MOS switching tube according to an aspect of the present invention with dynamic driving ability is opened and turn off.
Waveform schematic diagram time Figure 10 is the switch opens of a dynamic driving ability of the present invention, VCS waveform is current sampling resistor R svoltage waveform, VGS is the voltage waveform of drive end, and VDS is the waveform of MOS switching tube drain terminal and source, S nand S pbe respectively the control signal of pull-down NMOS pipe and pull-up PMOS.Rds_PMOS is the conducting resistance of pull-up PMOS, with Fig. 6 unlike, this conducting resistance on-fixed value, but linear change, namely conducting resistance is by diminishing gradually greatly, can find compared with fixing conducting resistance (Fig. 6), in t2 ~ t3 stage, because resistance is comparatively large, produces dv/dt slowly, thus effectively can reduce EMI.
Switching waveform schematic diagram time Figure 11 is the switch OFF of a dynamic driving ability of the present invention, wherein Rds_NMOS is the conducting resistance of pull-down NMOS pipe, with Fig. 7 unlike, this conducting resistance on-fixed value, but linear change, conducting resistance is by diminishing gradually greatly.Can find compared with fixing conducting resistance, in t7 ~ t8 stage, because resistance is comparatively large, produces dv/dt slowly, thus effectively can reduce EMI.
Figure 12 is a schematic diagram carrying out dynamic driving according to frequency load of the present invention.The figure illustrates pull-up metal-oxide-semiconductor resistance and how drop-down metal-oxide-semiconductor resistance changes driving force according to load.S pfor pull-up control signal, the current Ib iasD of dynamic driving can be obtained by the voltage signal of VCC, COMP (compensation) voltage signal, line loss current signal, Ton signal, duty cycle signals.
When underloading, there are lower VCC, higher COMP voltage, larger line loss electric current, less Ton and duty ratio.When heavy duty, there are higher VCC voltage, less COMP voltage, less line loss electric current, larger Ton and duty ratio.
Along with diminishing gradually of load, frequency and peak current also can diminish accordingly, and the EMI of generation also can diminish gradually, so one of advantage of dynamic driving be exactly meet EMI require while, according to loading condition, quickening driving force gradually, loss is got in the friendship reducing MOS switching tube.Simultaneously when zero load, there is the strongest driving force, effectively can reduce turn-off delay and the peak current that increases, thus play the effect reducing stand-by power consumption.
Therefore, the index of reflected load situation IbiasD can be provided, to regulate driving force based on COMP voltage etc.Such as, the IbiasD provided can be directly proportional to COMP voltage, and load is heavier, and COMP voltage is less, and IbiasD is less, driving force is less, thus alleviates EMI, otherwise load is lighter, and COMP voltage is larger, Ibias is larger, and driving force is stronger, thus lifting switch speed, reduce power consumption.Set forth below is the embodiment that IbiasD is provided based on COMP voltage, but also can provide IbiasD based on any index relevant with loading condition.
Figure 13 shows the dynamic driver circuit figure for pull-up PMOS according to an aspect of the present invention.In the drawings, pull-up metal-oxide-semiconductor adopts PMOS.As shown in the figure, the source electrode of pull-up PMOS is coupled to VCC, and drain electrode is coupled to the gate terminal of MOS switching tube (not shown), is coupled to the one end (being the drain electrode end of NMOS tube in figure) in the source terminal of drop-down metal-oxide-semiconductor or drain electrode end simultaneously.
Controlled voltage source module is realized by charge and discharge capacitance C and dynamic current generation module 1302.There is between the gate terminal of pull-up PMOS and source terminal charge and discharge capacitance C.This charge and discharge capacitance C can be the primary source-grid parasitic capacitance of PMOS, also can be extra additional electric capacity.
The gate terminal of pull-up PMOS receives the pull-up control signal S of driving circuit 1301 pto control the turn-on and turn-off of pull-up PMOS.Such as, S is worked as pduring for low level, the conducting of pull-up PMOS.
Dynamic current generation module 1302 is in order to dynamically to generate the charging and discharging currents of size variation especially.The output of dynamic current generation module 1302 is coupled to the gate terminal of pull-up PMOS, during to need in pull-up PMOS to open, provides this charging and discharging currents, rises to supply voltage at a predetermined velocity to make the gate source voltage of pull-up PMOS.Here pull-up metal-oxide-semiconductor is PMOS, and therefore, when needs are opened, in fact dynamic current generation module 1302 provides discharging current, thus makes the gate terminal of pull-up PMOS drop to 0 from VCC, i.e. the absolute value of grid-source pressure reduction is VCC.
In order to control the break-make of charging and discharging currents IbiaD, can be provided with pull-up current switching tube P1 between dynamic current generation module 1302 and pull-up PMOS, be PMOS here.The gate terminal of pull-up current switching tube P1 is coupled to drive circuit 1301 to receive pull-up control signal, thus by pull-up control signal S pcarry out control switch, and then the break-make of control IbiasD.Such as, at S pfor low level to open pull-up PMOS time, S pfirst low level makes pull-up current switching tube P1 conducting, thus make dynamic current generation module 1302 provide charging and discharging currents (being specially discharging current) to pull-up PMOS, to make the grid voltage of pull-up PMOS reduce to 0 gradually from VCC, become and open.
It should be noted that when opening pull-up PMOS, wishing that its grid voltage reduces to 0 gradually from VCC, to open pull-up PMOS gradually.But, when turning off pull-up PMOS, then do not wish so, but turn off that The faster the better.Therefore, this controlled voltage source module also can be designed with pull-up reset switch pipe P2, is P pipe here.
The source terminal of pull-up reset switch pipe P2 is coupled to VCC, drain electrode end is coupled to the gate terminal of pull-up PMOS, gate terminal is coupled to drive circuit 1301 to receive the inversion signal of pull-up control signal, thus makes pull-up reset switch pipe P2 have the conducting contrary with pull-up current switching tube P1 or off state.
When needs turn off pull-up PMOS, pull-up control signal S pbecome high level, pull-up current switching tube P1 is turned off, and pull-up reset switch pipe P2 is opened, thus makes the gate terminal of pull-up PMOS directly be connected to supply voltage VCC, thus turns off pull-up PMOS immediately.
Figure 14 shows the dynamic driver circuit figure for pull-up NMOS tube according to an aspect of the present invention.In the drawings, pull-up metal-oxide-semiconductor adopts NMOS tube.As shown in the figure, the drain electrode of pull-up NMOS tube is coupled to VCC, and source electrode is coupled to the gate terminal of MOS switching tube (not shown), is coupled to the one end (being the drain electrode end of NMOS tube in figure) in the source terminal of drop-down metal-oxide-semiconductor or drain electrode end simultaneously.
Controlled voltage source module is realized by charge and discharge capacitance C and dynamic current generation module 1402.There is between the gate terminal of pull-up NMOS tube and source terminal charge and discharge capacitance C.This charge and discharge capacitance C can be the primary source-grid parasitic capacitance of NMOS tube, also can be extra additional electric capacity.
The gate terminal of pull-up NMOS tube receives the pull-up control signal of driving circuit 1301 to control the turn-on and turn-off of pull-up NMOS tube.Such as, when during for high level, the conducting of pull-up NMOS tube.
Especially, dynamic current generation module 1402 is in order to dynamically to generate the charging and discharging currents of size variation.The output of dynamic current generation module 1402 is coupled to the gate terminal of pull-up NMOS tube, during to need in pull-up NMOS tube to open, provides this charging and discharging currents, rises to supply voltage at a predetermined velocity to make the gate source voltage of pull-up NMOS tube.Here pull-up metal-oxide-semiconductor is NMOS tube, and therefore, when needs are opened, in fact dynamic current generation module 1402 provides charging current, thus makes the gate terminal of pull-up NMOS tube be raised to VCC from 0, i.e. the absolute value of grid-source pressure reduction is VCC.
In order to control the break-make of charging and discharging currents IbiaD, can be provided with pull-up current switching tube N1 between dynamic current generation module 1402 and pull-up NMOS tube, be NMOS tube here.The gate terminal of pull-up current switching tube N1 is coupled to drive circuit 1401 to receive pull-up control signal thus by pull-up control signal carry out control switch, and then the break-make of control IbiasD.Such as, exist for high level to open pull-up NMOS tube time, first high level makes pull-up current switching tube N1 conducting, thus make dynamic current generation module 1402 provide charging and discharging currents (being specially charging current) to pull-up NMOS tube, making the grid voltage of pull-up NMOS tube from 0 by being upgraded to VCC, becoming and opening.
It should be noted that when opening pull-up NMOS tube, wishing that its grid voltage is upgraded to VCC gradually from 0, to open pull-up NMOS tube gradually.But, when turning off pull-up NMOS tube, then do not wish so, but turn off that The faster the better.Therefore, controlled voltage source module also can be designed with pull-up reset switch pipe N2, is NMOS tube here.
The source terminal of pull-up reset switch pipe N2 is held with being coupled to circuit, drain electrode end is coupled to the gate terminal of pull-up NMOS tube, gate terminal is coupled to drive circuit 1401 to receive the inversion signal of pull-up control signal, thus makes pull-up reset switch pipe N2 have the conducting contrary with pull-up current switching tube N1 or off state.
When needs turn off pull-up NMOS tube, pull-up control signal become low level, pull-up current switching tube N1 is turned off, and pull-up reset switch pipe N2 is opened, thus the gate terminal of pull-up NMOS tube is held with being directly connected to circuit, thus turns off pull-up NMOS tube immediately.
Figure 15 shows the dynamic driver circuit figure for pull-down NMOS pipe according to an aspect of the present invention.In the drawings, drop-down metal-oxide-semiconductor adopts NMOS tube.As shown in the figure, the source electrode of pull-down NMOS pipe is held with being coupled to circuit, drain electrode is coupled to the gate terminal of MOS switching tube (not shown), is coupled to the one end (being the drain electrode end of PMOS in figure) in the source terminal of pull-up metal-oxide-semiconductor or drain electrode end simultaneously.
Controlled voltage source module is realized by charge and discharge capacitance C and dynamic current generation module 1502.There is between the gate terminal of pull-down NMOS pipe and source terminal charge and discharge capacitance C.This charge and discharge capacitance C can be the primary source-grid parasitic capacitance of NMOS tube, also can be extra additional electric capacity.
The gate terminal of pull-down NMOS pipe receives the pull-up control signal S of driving circuit 1501 nto control the turn-on and turn-off of pull-down NMOS pipe.Such as, S is worked as nduring for high level, pull-down NMOS pipe conducting.
Especially, dynamic current generation module 1502 is in order to dynamically to generate the charging and discharging currents of size variation.The output of dynamic current generation module 1502 is coupled to the gate terminal of pull-down NMOS pipe, during to need in pull-down NMOS pipe to open, provides this charging and discharging currents, rises to supply voltage at a predetermined velocity to make the gate source voltage of pull-down NMOS pipe.Here drop-down metal-oxide-semiconductor is NMOS tube, and therefore, when needs are opened, in fact dynamic current generation module 1502 provides charging current, thus makes the gate terminal of pull-down NMOS pipe be raised to VCC from 0, i.e. the absolute value of grid-source pressure reduction is VCC.
In order to control the break-make of charging and discharging currents IbiaD, can be provided with pull-down current switching tube N1 between dynamic current generation module 1502 and pull-down NMOS pipe, be NMOS tube here.The gate terminal of pull-down current switching tube N1 is coupled to drive circuit 1501 to receive drop-down control signal, thus by drop-down control signal S ncarry out control switch, and then the break-make of control IbiasD.Such as, at S nfor high level to open pull-down NMOS pipe time, S nfirst high level makes pull-down current switching tube N1 conducting, thus make dynamic current generation module 1502 pull down NMOS tube to provide charging and discharging currents (being specially charging current), to make the grid voltage of pull-down NMOS pipe be upgraded to VCC gradually from 0, become and open.
It should be noted that when opening pull-down NMOS pipe, wishing that its grid voltage is upgraded to VCC gradually from 0, to open pull-down NMOS pipe gradually.But, when turning off pull-down NMOS pipe, then do not wish so, but turn off that The faster the better.Therefore, this controlled voltage source module also can be designed with drop-down reset switch pipe N2, is NMOS tube here.
The source terminal of drop-down reset switch pipe N2 is held with being coupled to circuit, drain electrode end is coupled to the gate terminal of pull-down NMOS pipe, gate terminal is coupled to drive circuit 1501 to receive the inversion signal of drop-down control signal, thus makes drop-down reset switch pipe N2 have the conducting contrary with pull-down current switching tube N1 or off state.
When needs turn off pull-down NMOS pipe, drop-down control signal S nbecome low level, pull-down current switching tube N1 is turned off, and drop-down reset switch pipe N2 is opened, thus the gate terminal of pull-down NMOS pipe is held with being directly connected to circuit, thus turns off pull-down NMOS pipe immediately.
The situation being PMOS due to drop-down metal-oxide-semiconductor only uses when twin voltage is powered, and principle is identical with the principle for NMOS tube, therefore, repeats no more.
Figure 16 shows the dynamic driver circuit figure according to one embodiment of the invention.Shown dynamic driving scheme in Figure 16 and the difference of the dynamic driving scheme shown in Figure 13 are to the addition of current mirroring circuit, to be transmitted the charging and discharging currents that dynamic current generation module generates by current mirroring circuit.
As shown in figure 16, pull-up metal-oxide-semiconductor adopts PMOS.The source electrode of pull-up PMOS is coupled to VCC, and drain electrode is coupled to the gate terminal of MOS switching tube (not shown), is coupled to the one end (being the drain electrode end of NMOS tube in figure) in the source terminal of drop-down metal-oxide-semiconductor or drain electrode end simultaneously.There is between the gate terminal of pull-up PMOS and source terminal charge and discharge capacitance C.This charge and discharge capacitance C can be the primary source-grid parasitic capacitance of PMOS, also can be extra additional electric capacity.
With similar in Figure 13, also comprise dynamic current generation module 1602 in Figure 16 to generate charging and discharging currents IbiasD, in addition, be also provided with pull-up circuit switching tube P1 in order to control the break-make of charging and discharging currents.In addition, pull-up reset switch pipe P2 is also provided with in Figure 16.
In an embodiment, be provided with current mirror that dynamic current generation module 1602 generates by the pull-up current mirror circuit gate terminal to pull-up PMOS in figure 16, pull-up current mirror circuit controls break-make by pull-up current switching tube P1, and then controls providing of charging and discharging currents.
In the embodiment shown in Figure 16, shown current mirroring circuit comprises two current lens unit.First current lens unit is made up of PMOS P3 and P4, and the second current lens unit is made up of NMOS tube N1 and N2.The output of dynamic current generation module 1602 is coupled to the mirror image input of the first current lens unit, the i.e. drain electrode end of P3, the mirror output of the first current lens unit and the drain electrode end of P4 are coupled to the mirror image input of the second current lens unit and the drain electrode end of N1 via pull-up current switching tube P1, and the mirror output of the second current lens unit and the drain electrode end of N2 are coupled to the gate terminal of pull-up PMOS.
Here the first current lens unit and the image ratio of the second current lens unit can equal 1, also can be greater than 1 suitably to amplify IbiasD.
The gate terminal of pull-up current switching tube P1 is coupled to drive circuit 1601 to receive pull-up control signal, thus by pull-up control signal S pcarry out control switch, and then control the break-make of mirror image circuit, i.e. the break-make of IbiasD.Such as, at S pfor low level to open pull-up PMOS time, S pfirst low level makes pull-up current switching tube P1 conducting, now current mirroring circuit is unlocked, thus make the IbiasD of dynamic current generation module 1602 be mirrored gate terminal to pull-up PMOS, to make the grid voltage of pull-up PMOS reduce to 0 gradually from VCC, become and open.Owing to being discharging current here, so can think that the circuit that dynamic current generation module 1602 generates is negative current, as shown by the arrow.
Pull-up reset switch pipe P2 has the conducting contrary with pull-up current switching tube P1 or off state.When needs turn off pull-up PMOS, pull-up control signal S pbecome high level, pull-up current switching tube P1 is turned off, and pull-up reset switch pipe P2 is opened, thus makes the gate terminal of pull-up PMOS directly be connected to supply voltage VCC, thus turns off pull-up PMOS immediately.
Figure 17 shows the dynamic driver circuit figure according to one embodiment of the invention.Shown dynamic driving scheme in Figure 17 and the difference of the dynamic driving scheme shown in Figure 15 are to the addition of current mirroring circuit, to be transmitted the charging and discharging currents that dynamic current generation module generates by current mirroring circuit.
As shown in figure 17, drop-down metal-oxide-semiconductor adopts NMOS tube.The source electrode of pull-down NMOS pipe is held with being coupled to circuit, and drain electrode is coupled to the gate terminal of MOS switching tube (not shown), is coupled to the one end (being the drain electrode end of PMOS in figure) in the source terminal of pull-up metal-oxide-semiconductor or drain electrode end simultaneously.There is between the gate terminal of pull-down NMOS pipe and source terminal charge and discharge capacitance C.This charge and discharge capacitance C can be the primary source-grid parasitic capacitance of NMOS tube, also can be extra additional electric capacity.
With similar in Figure 15, also comprise dynamic current generation module 1702 in Figure 17 to generate charging and discharging currents IbiasD, in addition, be also provided with pull-down circuit switching tube N1 in order to control the break-make of charging and discharging currents.In addition, drop-down reset switch pipe N2 is also provided with in Figure 17.
In an embodiment, be provided with current mirror that dynamic current generation module 1702 generates by the pull-down current mirror circuit gate terminal to pull-down NMOS pipe in fig. 17, pull-down current mirror circuit controls break-make by pull-down current switching tube N1, and then controls providing of charging and discharging currents.
In the embodiment shown in Figure 17, shown current mirroring circuit comprises two current lens unit.First current lens unit is made up of NMOS tube N3 and N4, and the second current lens unit is made up of PMOS P1 and P2.The output of dynamic current generation module 1702 is coupled to the mirror image input of the first current lens unit, the i.e. drain electrode end of N3, the mirror output of the first current lens unit and the drain electrode end of N4 are coupled to the mirror image input of the second current lens unit and the drain electrode end of P1 via pull-down current switching tube N1, and the mirror output of the second current lens unit and the drain electrode end of P2 are coupled to the gate terminal of pull-down NMOS pipe.
Here the first current lens unit and the image ratio of the second current lens unit can equal 1, also can be greater than 1 suitably to amplify IbiasD.
The gate terminal of pull-down current switching tube N1 is coupled to drive circuit 1701 to receive drop-down control signal, thus by drop-down control signal S ncarry out control switch, and then control the break-make of mirror image circuit, i.e. the break-make of IbiasD.Such as, at S nfor high level to open pull-down NMOS pipe time, S nfirst high level makes pull-down current switching tube N1 conducting, now current mirroring circuit is unlocked, thus make the IbiasD of dynamic current generation module 1702 be mirrored gate terminal to pull-down NMOS pipe, to make the grid voltage of pull-down NMOS pipe be upgraded to VCC gradually from 0, become and open.Owing to being charging current here, so can think that the circuit that dynamic current generation module 1702 generates is positive current, as shown by the arrow.
Drop-down reset switch pipe N2 has the conducting contrary with pull-down current switching tube N1 or off state.When needs turn off pull-down NMOS pipe, drop-down control signal S nbecome low level, pull-down current switching tube N1 is turned off, and drop-down reset switch pipe N2 is opened, thus the gate terminal of pull-down NMOS pipe is held with being directly connected to circuit, thus turns off pull-down NMOS pipe immediately.
Figure 18 shows the dynamic driver circuit figure according to one embodiment of the invention.In figure 18, dynamic driving technology of the present invention is all employed to pull-up metal-oxide-semiconductor and drop-down metal-oxide-semiconductor.Scheme for pull-up PMOS dynamic driving is described in figure 16, although pull-up metal-oxide-semiconductor is here NMOS tube, principle is identical with Figure 16, therefore repeats no more.
For pull-down NMOS pipe, its dynamic driving is roughly the same with Figure 17, difference is only that controlled voltage source module includes again a supplemental current generation module for introducing a supplemental current, to accelerate closing process when namely unlatching pull-down NMOS pipe closes MOS switching tube M1 (not shown).
Get back to Figure 11, in the process that MOS switching tube M1 turns off, the time period of VDS change is t7-t8, and vd/vt is slower during this period of time, and EMI is less.But within the t6-t7 time period, VDS is that 0, EMI problem is comparatively light, now wishes turn-off speed faster, therefore, if the pace of change can accelerating Rds_NMOS at this moment in section can shorten the turn-off time, EMI performance can not be affected simultaneously.
For this reason, controlled voltage source module controls the break-make of supplemental current by supplemental current switching tube, the output of this supplemental current generation module is coupled to the gate terminal of pull-down NMOS pipe via this supplemental current switching tube, this supplemental current switching tube in the opening process of pull-down NMOS pipe when MOS switching tube grid voltage change time conducting provide supplemental current with the gate terminal pulling down NMOS tube, to accelerate the change of the gate source voltage of pull-down NMOS pipe.
This supplemental current generation module comprises mirror image circuit, for charging and discharging currents mirror image that dynamic current generation module is generated to the gate terminal of pull-down NMOS pipe to provide this supplemental current.Such as, according to the embodiment of Figure 18, the second current lens unit is also provided with PMOS P23 and P21, P22 and forms mirror-image structure arranged side by side together.Namely the gate terminal except pulling down NMOS tube as the first mirror output of the second current lens unit and the drain electrode of P22 provides except mirror image IbiasD electric current, and the drain electrode of P23 is coupled to the gate terminal of drop-down NOMS pipe here by supplemental current switching tube (being NMOS tube N25) as the second mirror output of the second current lens unit.
Under this arrangement, when the gate terminal voltage of pull-down NMOS pipe is lower time, the output of not gate I1 is high, then open supplemental current switching tube N25, increase by a road charging current extraly by P23, and the controlled voltage source change of the gate terminal of pull-down NMOS pipe is very fast.After the grid voltage of pull-down NMOS pipe is higher than threshold voltage vth, the output of not gate I1 is low, closes the charging current that this supplements.
Figure 19 shows the effect of this supplemental current.As shown in figure 19, in the t6-t7 time period, Rds_NMOS is divided into two stages, and at first stage decrease speed is faster, and supplemental current switching tube opens the period providing supplemental current just during this period of time, declines after supplemental current is closed with slightly slow speed again.
Figure 20 shows the dynamic driver circuit figure according to one embodiment of the invention.The difference of Figure 20 and Figure 18 is, is controlled the break-make of supplemental current switching tube N25 in Figure 18 by not gate I1.But, this mode inaccuracy, as shown in figure 19, within the t6-t7 time period, only have and be to provide supplemental current for the previous period, but desirably within the whole t6-t7 time period, all provide supplemental current with pick up speed, and stop supplemental current at once after the t7 moment.
For this reason, the gate terminal of supplemental current switching tube is designed to receive the supplemental current switching signal be directly associated with the grid voltage of MOS switching tube, to make when the grid voltage of MOS switching tube slowly changes, supplemental current switching signal controls supplemental current switching tube N25 and turns off to block supplemental current, and when the grid voltage of MOS switching tube is constant, supplemental current switching signal controls supplemental current switching tube N25 conducting to open supplemental current.
The grid voltage that turn off analysis circuit 2003 analyzes MOS switching tube M1 is have employed in Figure 20.As shown in figure 20, the input of turn off analysis electric current 2003 is coupled to the gate terminal of MOS switching tube M1, and to detect grid voltage, output is coupled to the gate terminal of supplemental current switching tube N25, to provide above-mentioned supplemental current switching signal.
In the example shown in Figure 20, this turn off analysis circuit 2003 can comprise comparator COM, the first input end of this comparator is coupled to the gate terminal of MOS switching tube M1, second input is coupled to the gate terminal of MOS switching tube M1 via resistance R2, simultaneously via electric capacity C3 ground connection, output is coupled to the gate terminal of supplemental current switching tube N25.
The signal of the second input input of comparator COM is actually the version of the delay of first input end input signal, by both relatively can analyze draw MOS switching tube M1 grid voltage whether in slow change.
Due in Miller platform phase, GATE (grid) voltage is substantially constant.By comparator COM and resistance R2 and C3, high level is exported in the comparator upset of vertiginous time, open the supplemental current switching tube N25 that supplemental current is provided, in the substantially constant stage, comparator upset output low level, turn off N25 again, thus decrease the whole turn-off time, increase Miller plateau time simultaneously.
Figure 21 shows the effect of this supplemental current.As shown in figure 21, Rds_NMOS within t6-t7 and the t8-t9 time period owing to providing supplemental current, therefore compared to the t7-t8 time period, there is resistance variations speed faster, reduce turn-off delay, simultaneously due to this period appear at the moment t7 that VDS changes before and after t8, therefore can not affect EMI performance.
Figure 20 also show the embodiment of dynamic current generation module 2002.In fig. 20, dynamic current generation module 2002 current mirroring circuit that can comprise error amplifier EA and be made up of PMOS P31, P32.The first input end of this error amplifier EA receives COMP voltage, and the second input is coupled to its output, and output is again by resistance R1 ground connection in addition.According to the knowledge of error amplifier EA, namely the voltage of the output of error amplifier EA equal COMP voltage, thus the electric current of COMP/R1 is obtained at the mirror image input of current mirroring circuit, this electric current is via the mirror image of current mirroring circuit, export from the mirror output of current mirroring circuit and the drain electrode of P32, to obtain IbiasD.
As previously mentioned, IbiasD should be inversely proportional to circuit load here, and load is heavier, and Ibias is less, and such as the loop compensation voltage COMP of circuit is just in time inversely proportional to load here, therefore, as long as be designed to by IbiasD be directly proportional to COMP voltage.Generating IbiasD with COMP voltage is only an example, also can according to any can reflected load index generate IbiasD, such as IbiasD electric current can be the image current of line loss electric current, also can with being the electric current proportional with VCC, also can be the electric current proportional with duty ratio of demagnetizing, ON time, cycle.Figure 22 shows the schematic diagram of dynamic current and load frequency relation.
According to the solution of the present invention, at different output states, due to the change of dynamic current IbiasD, the rate of change in controlled linear voltage source also changes.When upper frequency, dynamic current IbiasD is less, and the rate of change in controlled linear voltage source is little, and the conducting resistance change of pull-up and drop-down MOSFET is slow, and in switching process, dv/dt change is slow, and EMI performance is good.When frequency is lower, dynamic current IbiasD is larger.The rate of change of controlled linear voltage source is large, and the conducting resistance change of pull-up and drop-down MOSFET is fast, postpones little, hands over more loss to reduce.
The present invention still further provides a kind of driving method of the dynamic adjustments device for drive singal.This drive singal is used for the switch of driven MOS switching tube.This dynamic adjustments device comprises: pull-up metal-oxide-semiconductor, and gate terminal receives pull-up control signal for controlling its conducting or shutoff, and the one end in source terminal and drain electrode end is coupled to power voltage terminal, and the other end is coupled to the gate terminal of this MOS switching tube; And drop-down metal-oxide-semiconductor, gate terminal receives drop-down control signal for controlling its conducting or shutoff, and the one end in source terminal and drain electrode end is held with being coupled to circuit, and the other end is coupled to the gate terminal of this MOS switching tube.
When this driving method is included in this drop-down metal-oxide-semiconductor by this drop-down control signal unlatching, gate terminal to this drop-down metal-oxide-semiconductor provides controlled voltage to rise to supply voltage to make the gate source voltage of this drop-down metal-oxide-semiconductor with dynamically adjustable speed, thus drives the shutoff of this MOS switching tube with variable driving force.
When loading condition is heavier, the controlled voltage change provided to the gate terminal of this drop-down metal-oxide-semiconductor is more slow, the speed of supply voltage is risen to the gate source voltage of the drop-down metal-oxide-semiconductor that slows down, thus reduction driving force, and loading condition lighter time, the controlled voltage change provided to the gate terminal of this drop-down metal-oxide-semiconductor is faster, rises to the speed of supply voltage, thus improve driving force with the gate source voltage accelerating this drop-down metal-oxide-semiconductor.
Drop-down charge and discharge capacitance is provided with between the gate terminal of this drop-down metal-oxide-semiconductor and source terminal, the charging and discharging currents of size variation dynamically can be generated based on the loading condition of this MOS switching tube, with when this drop-down metal-oxide-semiconductor is opened, by the discharge and recharge to this drop-down charge and discharge capacitance, the grid to this drop-down metal-oxide-semiconductor provides controlled voltage.
Less charging and discharging currents is generated under heavier loading condition, the speed of supply voltage is risen to the gate source voltage of this drop-down metal-oxide-semiconductor that slows down, and under lighter loading condition, generate larger charging and discharging currents, the speed of supply voltage is risen to the gate source voltage accelerating drop-down metal-oxide-semiconductor.
The method is also included in the opening process of this drop-down metal-oxide-semiconductor and provides supplemental current, to accelerate the change of the gate source voltage of this drop-down metal-oxide-semiconductor when the grid voltage change of this MOS switching tube to the gate terminal of this drop-down metal-oxide-semiconductor.
The method is also included in this pull-up metal-oxide-semiconductor when being opened by this pull-up control signal, gate terminal to this pull-up metal-oxide-semiconductor provides controlled voltage to rise to supply voltage to make the gate source voltage of this pull-up metal-oxide-semiconductor with dynamically adjustable speed, thus drives the unlatching of this MOS switching tube with variable driving force.
When loading condition is heavier, the controlled voltage change provided to the gate terminal of this pull-up metal-oxide-semiconductor is more slow, the speed of supply voltage is risen to the gate source voltage of the pull-up metal-oxide-semiconductor that slows down, thus reduction driving force, and loading condition lighter time, the controlled voltage change provided to the gate terminal of this pull-up metal-oxide-semiconductor is faster, rises to the speed of supply voltage, thus improve driving force with the gate source voltage accelerating this pull-up metal-oxide-semiconductor.
Pull-up charge and discharge capacitance is provided with between the gate terminal and source terminal of this pull-up metal-oxide-semiconductor, the charging and discharging currents of size variation dynamically can be generated based on the loading condition of this MOS switching tube, with with when this pull-up metal-oxide-semiconductor is opened, by the discharge and recharge to this pull-up charge and discharge capacitance, the grid to this pull-up metal-oxide-semiconductor provides controlled voltage.
Less charging and discharging currents is generated under heavier loading condition, the speed of supply voltage is risen to the gate source voltage of this pull-up metal-oxide-semiconductor that slows down, and under lighter loading condition, generate larger charging and discharging currents, the speed of supply voltage is risen to the gate source voltage accelerating pull-up metal-oxide-semiconductor.
Thering is provided previous description of the present disclosure is for making any person skilled in the art all can make or use the disclosure.To be all apparent for a person skilled in the art to various amendment of the present disclosure, and generic principles as defined herein can be applied to other variants and can not depart from spirit or scope of the present disclosure.Thus, the disclosure not intended to be is defined to example described herein and design, but the widest scope consistent with principle disclosed herein and novel features should be awarded.

Claims (34)

1., for a dynamic adjustments device for drive singal, described drive singal is used for the switch of driven MOS switching tube, and described dynamic adjustments device comprises:
Pull-up metal-oxide-semiconductor, gate terminal receives pull-up control signal for controlling its conducting or shutoff, and the one end in source terminal and drain electrode end is coupled to power voltage terminal, and the other end is coupled to the gate terminal of described MOS switching tube,
Drop-down metal-oxide-semiconductor, gate terminal receives drop-down control signal for controlling its conducting or shutoff, and the one end in source terminal and drain electrode end is held with being coupled to circuit, and the other end is coupled to the gate terminal of described MOS switching tube, and
Controlled voltage source module, at described drop-down metal-oxide-semiconductor when being opened by described drop-down control signal, gate terminal to described drop-down metal-oxide-semiconductor provides controlled voltage to rise to supply voltage to make the gate source voltage of described drop-down metal-oxide-semiconductor with dynamically adjustable speed, thus drives the shutoff of described MOS switching tube with variable driving force.
2. dynamic adjustments device as claimed in claim 1, it is characterized in that, loading condition is heavier, then the controlled voltage change that provides to the gate terminal of described drop-down metal-oxide-semiconductor of described controlled voltage source module is more slow, the speed of supply voltage is risen to the gate source voltage of the drop-down metal-oxide-semiconductor that slows down, thus reduction driving force, and loading condition is lighter, the controlled voltage change that described controlled voltage source module provides to the gate terminal of described drop-down metal-oxide-semiconductor is faster, rise to the speed of supply voltage with the gate source voltage accelerating described drop-down metal-oxide-semiconductor, thus improve driving force.
3. dynamic adjustments device as claimed in claim 1, it is characterized in that, described controlled voltage source circuit comprises:
Drop-down charge and discharge capacitance, between the gate terminal being coupled in described drop-down metal-oxide-semiconductor and source terminal; And
Dynamic current generation module, for dynamically generating the charging and discharging currents of size variation based on the loading condition of described MOS switching tube, the output of described dynamic current generation module is coupled to the gate terminal of described drop-down metal-oxide-semiconductor, with when described drop-down metal-oxide-semiconductor is opened, by the discharge and recharge to described drop-down charge and discharge capacitance, the grid to described drop-down metal-oxide-semiconductor provides controlled voltage.
4. dynamic adjustments device as claimed in claim 3, it is characterized in that, described dynamic current generation module generates less charging and discharging currents under heavier loading condition, the speed of supply voltage is risen to the gate source voltage of the described drop-down metal-oxide-semiconductor that slows down, and under lighter loading condition, generate larger charging and discharging currents, the speed of supply voltage is risen to the gate source voltage accelerating drop-down metal-oxide-semiconductor.
5. dynamic adjustments device as claimed in claim 3, it is characterized in that, pull-down current switching tube is provided with to control the break-make of described charging and discharging currents between the gate terminal of described drop-down metal-oxide-semiconductor and described dynamic current generation module, the gate terminal of described pull-down current switching tube is coupled to described drop-down control signal, with when described drop-down control signal controls described drop-down metal-oxide-semiconductor conducting, make the conducting of described pull-down current switching tube to provide charging and discharging currents to the gate terminal of described drop-down metal-oxide-semiconductor.
6. dynamic adjustments device as claimed in claim 5, it is characterized in that, described controlled voltage source circuit also comprises drop-down reset switch pipe, one end in the source terminal of described drop-down reset switch pipe and drain electrode end is coupled to the gate terminal of described drop-down MOS switching tube, the other end is coupled to power voltage terminal when described drop-down metal-oxide-semiconductor is PMOS and holds with being coupled to circuit when described drop-down metal-oxide-semiconductor is NMOS tube, and described drop-down reset switch pipe has the conducting contrary with described pull-down current switching tube or off state.
7. dynamic adjustments device as claimed in claim 5, is characterized in that, the one end in the source terminal of described pull-down current switching tube and drain electrode end is coupled to the output of described dynamic current generation module, and the other end is coupled to the gate terminal of described drop-down metal-oxide-semiconductor.
8. dynamic adjustments device as claimed in claim 5, it is characterized in that, described controlled voltage source circuit also comprises pull-down current mirror circuit, described dynamic current generation module is coupled to the gate terminal of described drop-down metal-oxide-semiconductor via described pull-down current mirror circuit, and described pull-down current switching tube is coupled to described pull-down current mirror circuit to control the break-make of described pull-down current mirror circuit.
9. dynamic adjustments device as claimed in claim 8, it is characterized in that, described pull-down current mirror circuit comprises:
First current lens unit, the mirror image input of described first current lens unit couples the output of described dynamic current generation module; And
Second current lens unit, the mirror image input of described second current lens unit is coupled to the mirror output of described first current lens unit via described pull-down current switching tube, the mirror output of described second current lens unit is coupled to the gate terminal of described drop-down metal-oxide-semiconductor.
10. dynamic adjustments device as claimed in claim 3, it is characterized in that, described controlled voltage source circuit also comprises:
Supplemental current generation module, for generating supplemental current;
Supplemental current switching tube, the output of described supplemental current generation module is coupled to the gate terminal of described drop-down metal-oxide-semiconductor via described supplemental current switching tube, described supplemental current switching tube in the opening process of described drop-down metal-oxide-semiconductor when described MOS switching tube grid voltage change time conducting to provide supplemental current to the gate terminal of described drop-down metal-oxide-semiconductor, to accelerate the change of the gate source voltage of described drop-down metal-oxide-semiconductor.
11. dynamic adjustments devices as claimed in claim 10, it is characterized in that, described supplemental current switching tube and described drop-down metal-oxide-semiconductor are all NMOS tube, the gate terminal of described supplemental current switching tube is coupled to the gate terminal of described drop-down metal-oxide-semiconductor via inverter, to control the break-make of described supplemental current switching tube.
12. dynamic adjustments devices as claimed in claim 10, is characterized in that, also comprise:
Turn off analysis circuit, its input is coupled to the gate terminal of described MOS switching tube, to detect the grid voltage of described MOS switching tube, output is coupled to the gate terminal of described supplemental current switching tube, to open described supplemental current switching tube when the grid voltage of described MOS switching tube changes, and turn off described supplemental current switching tube when the grid voltage of described MOS switching tube is constant.
13. dynamic adjustments devices as claimed in claim 12, it is characterized in that, described turn off analysis circuit comprises:
Comparator, the first input end of described comparator is coupled to the gate terminal of described MOS switching tube, and the second input is coupled to the gate terminal of described MOS switching tube simultaneously via capacity earth via resistance, and output is coupled to the gate terminal of described supplemental current switching tube.
14. dynamic adjustments devices as claimed in claim 10, it is characterized in that, described supplemental current generation module comprises:
Mirror image circuit, for described charging and discharging currents mirror image that described dynamic current generation module is generated to the gate terminal of described drop-down metal-oxide-semiconductor to provide described supplemental current.
15. dynamic adjustments devices as claimed in claim 1, it is characterized in that, described controlled voltage source module at described pull-up metal-oxide-semiconductor when being opened by described pull-up control signal, gate terminal to described pull-up metal-oxide-semiconductor provides controlled voltage to rise to supply voltage to make the gate source voltage of described pull-up metal-oxide-semiconductor with dynamically adjustable speed, thus drives the unlatching of described MOS switching tube with variable driving force.
16. dynamic adjustments devices as claimed in claim 15, it is characterized in that, loading condition is heavier, then the controlled voltage change that provides to the gate terminal of described pull-up metal-oxide-semiconductor of described controlled voltage source module is more slow, the speed of supply voltage is risen to the gate source voltage of the pull-up metal-oxide-semiconductor that slows down, thus reduction driving force, and loading condition is lighter, the controlled voltage change that described controlled voltage source module provides to the gate terminal of described pull-up metal-oxide-semiconductor is faster, rise to the speed of supply voltage with the gate source voltage accelerating described pull-up metal-oxide-semiconductor, thus improve driving force.
17. dynamic adjustments devices as claimed in claim 15, it is characterized in that, described controlled voltage source circuit comprises:
Pull-up charge and discharge capacitance, between the gate terminal being coupled in described pull-up metal-oxide-semiconductor and source terminal; And
Dynamic current generation module, for dynamically generating the charging and discharging currents of size variation based on the loading condition of described MOS switching tube, the output of described dynamic current generation module is coupled to the gate terminal of described pull-up metal-oxide-semiconductor, with when described pull-up metal-oxide-semiconductor is opened, by the discharge and recharge to described pull-up charge and discharge capacitance, the grid to described pull-up metal-oxide-semiconductor provides controlled voltage.
18. dynamic adjustments devices as claimed in claim 17, it is characterized in that, described dynamic current generation module generates less charging and discharging currents under heavier loading condition, the speed of supply voltage is risen to the gate source voltage of the described pull-up metal-oxide-semiconductor that slows down, and under lighter loading condition, generate larger charging and discharging currents, the speed of supply voltage is risen to the gate source voltage accelerating pull-up metal-oxide-semiconductor.
19. dynamic adjustments devices as claimed in claim 17, it is characterized in that, pull-up current switching tube is provided with to control the break-make of described charging and discharging currents between the gate terminal of described pull-up metal-oxide-semiconductor and described dynamic current generation module, the gate terminal of described pull-up current switching tube is coupled to described pull-up control signal, with when described pull-up control signal controls described pull-up metal-oxide-semiconductor conducting, make the conducting of described pull-up current switching tube to provide charging and discharging currents to the gate terminal of described pull-up metal-oxide-semiconductor.
20. dynamic adjustments devices as claimed in claim 19, it is characterized in that, described controlled voltage source circuit also comprises pull-up reset switch pipe, one end in the source terminal of described pull-up reset switch pipe and drain electrode end is coupled to the gate terminal of described pull-up MOS switching tube, the other end is coupled to power voltage terminal when described pull-up metal-oxide-semiconductor is PMOS and holds with being coupled to circuit when described pull-up metal-oxide-semiconductor is NMOS tube, and described pull-up reset switch pipe has the conducting contrary with described pull-up current switching tube or off state.
21. dynamic adjustments devices as claimed in claim 19, is characterized in that, the one end in the source terminal of described pull-up current switching tube and drain electrode end is coupled to the output of described dynamic current generation module, and the other end is coupled to the gate terminal of described pull-up metal-oxide-semiconductor.
22. dynamic adjustments devices as claimed in claim 19, it is characterized in that, described controlled voltage source circuit also comprises pull-up current mirror circuit, described dynamic current generation module is coupled to the gate terminal of described pull-up metal-oxide-semiconductor via described pull-up current mirror circuit, and described pull-up current switching tube is coupled to described pull-up current mirror circuit to control the break-make of described pull-up current mirror circuit.
23. dynamic adjustments devices as claimed in claim 22, it is characterized in that, described pull-up current mirror circuit comprises:
3rd current lens unit, the mirror image input of described 3rd current lens unit couples the output of described dynamic current generation module; And
4th current lens unit, the mirror image input of described 4th current lens unit is coupled to the mirror output of described 3rd current lens unit via described pull-up current switching tube, the mirror output of described 4th current lens unit is coupled to the gate terminal of described pull-up metal-oxide-semiconductor.
24. dynamic adjustments devices as described in claim 3 or 17, it is characterized in that, described dynamic current generation module comprises:
Error amplifier, one input end receives COMP voltage, and another input is coupled to its output, and output is by grounding through resistance, and wherein said COMP voltage and load weight condition are inversely proportional to; And
Current mirroring circuit, the output of described error amplifier is coupled to the input of described current mirroring circuit to export described charging and discharging currents from described current mirroring circuit.
25. 1 kinds of drive systems, comprising:
MOS switching tube;
The dynamic adjustments device for drive singal according to any one of claim 1-24; And
Drive circuit, for generating described pull-up control signal and drop-down control signal.
26. 1 kinds of driving methods for the dynamic adjustments device of drive singal, described drive singal is used for the switch of driven MOS switching tube, described dynamic adjustments device comprises: pull-up metal-oxide-semiconductor, gate terminal receives the pull-up control signal for controlling its conducting or shutoff, one end in source terminal and drain electrode end is coupled to power voltage terminal, and the other end is coupled to the gate terminal of described MOS switching tube; And drop-down metal-oxide-semiconductor, gate terminal receives drop-down control signal for controlling its conducting or shutoff, and the one end in source terminal and drain electrode end is held with being coupled to circuit, and the other end is coupled to the gate terminal of described MOS switching tube,
Described driving method comprises:
When described drop-down metal-oxide-semiconductor is opened by described drop-down control signal, gate terminal to described drop-down metal-oxide-semiconductor provides controlled voltage to rise to supply voltage to make the gate source voltage of described drop-down metal-oxide-semiconductor with dynamically adjustable speed, thus drives the shutoff of described MOS switching tube with variable driving force.
27. driving methods as claimed in claim 26, it is characterized in that, when loading condition is heavier, the controlled voltage change provided to the gate terminal of described drop-down metal-oxide-semiconductor is more slow, rises to the speed of supply voltage, thus reduce driving force with the gate source voltage of the drop-down metal-oxide-semiconductor that slows down, and loading condition lighter time, the controlled voltage change provided to the gate terminal of described drop-down metal-oxide-semiconductor is faster, rises to the speed of supply voltage, thus improve driving force with the gate source voltage accelerating described drop-down metal-oxide-semiconductor.
28. driving methods as claimed in claim 26, is characterized in that, be provided with drop-down charge and discharge capacitance between the gate terminal of described drop-down metal-oxide-semiconductor and source terminal, and the wherein said gate terminal to described drop-down metal-oxide-semiconductor provides controlled voltage to comprise:
Loading condition based on described MOS switching tube dynamically generates the charging and discharging currents of size variation, and with when described drop-down metal-oxide-semiconductor is opened, by the discharge and recharge to described drop-down charge and discharge capacitance, the grid to described drop-down metal-oxide-semiconductor provides controlled voltage.
29. driving methods as claimed in claim 28, it is characterized in that, less charging and discharging currents is generated under heavier loading condition, the speed of supply voltage is risen to the gate source voltage of the described drop-down metal-oxide-semiconductor that slows down, and under lighter loading condition, generate larger charging and discharging currents, the speed of supply voltage is risen to the gate source voltage accelerating drop-down metal-oxide-semiconductor.
30. driving methods as claimed in claim 28, is characterized in that, also comprise:
Supplemental current is provided, to accelerate the change of the gate source voltage of described drop-down metal-oxide-semiconductor when the grid voltage change of described MOS switching tube to the gate terminal of described drop-down metal-oxide-semiconductor in the opening process of described drop-down metal-oxide-semiconductor.
31. driving methods as claimed in claim 26, is characterized in that, also comprise:
When described pull-up metal-oxide-semiconductor is opened by described pull-up control signal, gate terminal to described pull-up metal-oxide-semiconductor provides controlled voltage to rise to supply voltage to make the gate source voltage of described pull-up metal-oxide-semiconductor with dynamically adjustable speed, thus drives the unlatching of described MOS switching tube with variable driving force.
32. driving methods as claimed in claim 31, it is characterized in that, when loading condition is heavier, the controlled voltage change provided to the gate terminal of described pull-up metal-oxide-semiconductor is more slow, rises to the speed of supply voltage, thus reduce driving force with the gate source voltage of the pull-up metal-oxide-semiconductor that slows down, and loading condition lighter time, the controlled voltage change provided to the gate terminal of described pull-up metal-oxide-semiconductor is faster, rises to the speed of supply voltage, thus improve driving force with the gate source voltage accelerating described pull-up metal-oxide-semiconductor.
33. driving methods as claimed in claim 31, is characterized in that, between the gate terminal and source terminal of described pull-up metal-oxide-semiconductor, be provided with pull-up charge and discharge capacitance, and the wherein said gate terminal to described pull-up metal-oxide-semiconductor provides controlled voltage to comprise:
Loading condition based on described MOS switching tube dynamically generates the charging and discharging currents of size variation, and with when described pull-up metal-oxide-semiconductor is opened, by the discharge and recharge to described pull-up charge and discharge capacitance, the grid to described pull-up metal-oxide-semiconductor provides controlled voltage.
34. driving methods as claimed in claim 33, it is characterized in that, less charging and discharging currents is generated under heavier loading condition, the speed of supply voltage is risen to the gate source voltage of the described pull-up metal-oxide-semiconductor that slows down, and under lighter loading condition, generate larger charging and discharging currents, the speed of supply voltage is risen to the gate source voltage accelerating pull-up metal-oxide-semiconductor.
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CN108683329A (en) * 2018-06-14 2018-10-19 聚辰半导体(上海)有限公司 A kind of load current real-time detection system
CN108696106A (en) * 2017-04-05 2018-10-23 富士电机株式会社 Switching element driver
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CN112165308A (en) * 2020-08-20 2021-01-01 上海艾为电子技术股份有限公司 Edge control circuit, driving method thereof and electronic device
CN114826231A (en) * 2022-06-24 2022-07-29 深圳市时代速信科技有限公司 Field-effect transistor drive circuit and electronic device
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CN108696106A (en) * 2017-04-05 2018-10-23 富士电机株式会社 Switching element driver
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CN110266188A (en) * 2018-03-12 2019-09-20 长鑫存储技术有限公司 Input and output pre-driver circuitry
CN110266188B (en) * 2018-03-12 2020-09-29 长鑫存储技术有限公司 Input/output preceding stage driving circuit
CN108683329A (en) * 2018-06-14 2018-10-19 聚辰半导体(上海)有限公司 A kind of load current real-time detection system
CN109213253A (en) * 2018-09-28 2019-01-15 聚辰半导体(上海)有限公司 A kind of quick High Precision Low Temperature drift strong pull-down current generating circuit
CN109741778A (en) * 2018-12-29 2019-05-10 西安紫光国芯半导体有限公司 A kind of DRAM output driving circuit and its method for reducing electric leakage
CN112165308A (en) * 2020-08-20 2021-01-01 上海艾为电子技术股份有限公司 Edge control circuit, driving method thereof and electronic device
CN112165308B (en) * 2020-08-20 2023-06-02 上海艾为电子技术股份有限公司 Edge control circuit, driving method thereof and electronic equipment
CN114826231A (en) * 2022-06-24 2022-07-29 深圳市时代速信科技有限公司 Field-effect transistor drive circuit and electronic device
CN114866078A (en) * 2022-07-08 2022-08-05 深之蓝(天津)水下智能科技有限公司 Reset switch power on-off control circuit and system
CN114866078B (en) * 2022-07-08 2022-11-25 深之蓝(天津)水下智能科技有限公司 Reset switch power on-off control circuit and system

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