CN105576950B

CN105576950B - Dynamic regulation device and its driving method and drive system for driving signal

Info

Publication number: CN105576950B
Application number: CN201511031761.4A
Authority: CN
Inventors: 张钦阳; 詹桦; 洪益文
Original assignee: Hangzhou Silan Microelectronics Co Ltd
Current assignee: Hangzhou Silan Microelectronics Co Ltd
Priority date: 2015-12-31
Filing date: 2015-12-31
Publication date: 2019-02-01
Anticipated expiration: 2035-12-31
Also published as: CN105576950A

Abstract

The present invention provides a kind of dynamic regulation devices for driving signal, the driving signal is used to drive the switch of MOS switch pipe, the dynamic regulation device includes pull-up metal-oxide-semiconductor, gate terminal receives the pull-up for controlling its on or off and controls signal, one end in source terminal and drain electrode end is coupled to power voltage terminal, the other end is coupled to the gate terminal of the MOS switch pipe, pull down metal-oxide-semiconductor, gate terminal receives the drop-down for controlling its on or off and controls signal, one end in source terminal and drain electrode end is coupled to circuit ground terminal, the other end is coupled to the gate terminal of the MOS switch pipe, and controlled voltage source module, in the drop-down metal-oxide-semiconductor when controlling signal unlatching by the drop-down, controlled voltage is provided to the gate terminal of the drop-down metal-oxide-semiconductor so that the gate source voltage of the drop-down metal-oxide-semiconductor is with the adjustable speed of dynamic Degree rises to supply voltage, to drive the shutdown of the MOS switch pipe with variable driving capability.

Description

Dynamic regulation device and its driving method and drive system for driving signal

Technical field

The present invention relates to the actuation techniques in Switching Power Supply, more particularly, to the dynamic regulation device of driving signal and its Driving method and drive system.

Background technique

Currently, in medium and small equal output powers off-line type AC-DC translation circuit, primary-side-control (primary side Regulation, PSR) the primary feedback control technology of inverse-excitation type variator use, it eliminates the feedback of optical isolation and is set in traditional Secondary Control circuit needed for meter, simplifies design, is widely used in fields such as household electrical appliances.

Fig. 1 is typical primary-side-control inverse-excitation type AC-DC transfer circuit system structure chart.As shown in Figure 1, varying circuit packet Include off-line type AC-DC drive control circuit and peripheral circuit.

Referring to Fig. 1, general driving circuit 101 includes output detection module and Ton (turn-on time)/Toff (when shutdown Between) control module.Output detection module mainly pass through detection auxiliary winding feedback signal, obtain output voltage, demagnetization the time, The information such as turn-on time, input voltage.Ton/Toff control module is according to output detection module to output voltage and output electric current Analysis generates the driving signal of driving switch mosfet pipe M1, by changing Ton the and Toff time to realize output constant pressure, defeated The function of constant current out.

The off-line type AC-DC converter circuit include rectifier circuit (diode VD1, diode VD2, diode VD3, Diode VD4 composition), filter capacitor C1, transformer (Np be primary inductance the number of turns, Ns be secondary inductance the number of turns, Naux be auxiliary Winding inductance the number of turns), output rectifier diode VD5, output filter capacitor C2, feedback divider resistance R3 and R2, sampling resistor RS, Switch mosfet pipe (hereinafter referred to as MOS switch pipe) M1 and driving circuit 101.

Fig. 2 is typical BUCK type switching circuit, mainly includes peripheral components and the driving circuits such as inductance, capacitor, resistance. It is rectifier diode D1, defeated specifically, BUCK converter circuit includes magnetizing inductance L1, input filter capacitor C1 as shown in Figure 2 Filter capacitor C2, sampling resistor R1, R2 and driving circuit 102 out.Driving circuit 102 generally comprises output detection module and Ton/ Toff control module.Output detection module samples output voltage to obtain output information by R1 and R2.Ton/Toff controls mould It's change Ton and the Toff time pasts block, generates the driving signal of driving MOS switch pipe M1, to realize output constant pressure, output constant current Function.

In above-mentioned Switching Power Supply transfer circuit system, there is the faster electricity of variation as switching device in MOS switch pipe M1 Buckling and biggish switching loss.Optimization processing is not done to the driving of MOS switch pipe M1, will lead to difficult to deal with EMI (electromagnetic interference), lower average efficiency and biggish stand-by power consumption.

Summary of the invention

A brief summary of one or more aspects is given below to provide to the basic comprehension in terms of these.This general introduction is not The extensive overview of all aspects contemplated, and be both not intended to identify critical or decisive element in all aspects also non- Attempt to define the range in terms of any or all.Its unique purpose is to provide the one of one or more aspects in simplified form A little concepts are with the sequence for more detailed description given later.

According to an aspect of the present invention, a kind of dynamic regulation device for driving signal is provided, which uses In the switch of driving MOS switch pipe, which includes:

Metal-oxide-semiconductor is pulled up, gate terminal receives the pull-up for controlling its on or off and controls signal, source terminal and drain electrode end In one end be coupled to power voltage terminal, the other end is coupled to the gate terminal of the MOS switch pipe,

Metal-oxide-semiconductor is pulled down, gate terminal receives the drop-down for controlling its on or off and controls signal, source terminal and drain electrode end In one end be coupled to circuit ground terminal, the other end is coupled to the gate terminal of the MOS switch pipe, and

Controlled voltage source module, in the drop-down metal-oxide-semiconductor when controlling signal unlatching by the drop-down, to the drop-down metal-oxide-semiconductor Gate terminal provides controlled voltage so that the gate source voltage of the drop-down metal-oxide-semiconductor rises to supply voltage with the adjustable speed of dynamic, thus The shutdown of the MOS switch pipe is driven with variable driving capability.

In one example, loading condition is heavier, then the controlled voltage source module is provided to the gate terminal of the drop-down metal-oxide-semiconductor Controlled voltage variation is more slow, the speed of supply voltage is risen to slow down the gate source voltage of drop-down metal-oxide-semiconductor, to reduce driving energy Power, and loading condition is lighter, the controlled voltage variation which provides to the gate terminal of the drop-down metal-oxide-semiconductor is got over Fastly, the speed of supply voltage is risen to accelerate the gate source voltage of the drop-down metal-oxide-semiconductor, to improve driving capability.

In one example, which includes:

Charge and discharge capacitance is pulled down, is coupled between the gate terminal and source terminal of the drop-down metal-oxide-semiconductor；And

Dynamic current generation module is dynamically generated filling for size variation for the loading condition based on the MOS switch pipe Discharge current, the output end of the dynamic current generation module are coupled to the gate terminal of the drop-down metal-oxide-semiconductor, in the drop-down metal-oxide-semiconductor When unlatching, by the charge and discharge to the drop-down charge and discharge capacitance, controlled voltage is provided to the grid of the drop-down metal-oxide-semiconductor.

In one example, which generates smaller charging and discharging currents under heavier loading condition, The speed of supply voltage is risen to slow down the gate source voltage of the drop-down metal-oxide-semiconductor, and is generated under lighter loading condition bigger Charging and discharging currents, to accelerate the speed that the gate source voltage of drop-down metal-oxide-semiconductor rises to supply voltage.

In one example, it is opened between the gate terminal of the drop-down metal-oxide-semiconductor and the dynamic current generation module equipped with pull-down current Pipe is closed to control the on-off of the charging and discharging currents, the gate terminal of the pull-down current switching tube is coupled to drop-down control signal, with When drop-down control signal controls drop-down metal-oxide-semiconductor conducting, make pull-down current switching tube conducting with to the drop-down metal-oxide-semiconductor Gate terminal provides charging and discharging currents.

In one example, which further includes drop-down reset switch pipe, the source of the drop-down reset switch pipe One end in extreme and drain electrode end is coupled to the gate terminal of the drop-down MOS switch pipe, and the other end is PMOS tube in the drop-down metal-oxide-semiconductor When be coupled to power voltage terminal and be coupled to circuit ground terminal when the drop-down metal-oxide-semiconductor is NMOS tube, drop-down reset switch pipe tool There is the on or off state opposite with the pull-down current switching tube.

In one example, it is raw to be coupled to the dynamic current for one end in the source terminal and drain electrode end of the pull-down current switching tube At the output end of module, the other end is coupled to the gate terminal of the drop-down metal-oxide-semiconductor.

In one example, which further includes pull-down current mirror circuit, dynamic current generation module warp The gate terminal of the drop-down metal-oxide-semiconductor is coupled to by the pull-down current mirror circuit, which is coupled to the pull-down current Mirror circuit is to control the on-off of the pull-down current mirror circuit.

In one example, which includes:

The mirror image input terminal of first current lens unit, first current lens unit couples the defeated of the dynamic current generation module Outlet；And

The mirror image input terminal of second current lens unit, second current lens unit is coupled to via the pull-down current switching tube The mirror output of first current lens unit, the mirror output of second current lens unit are coupled to the drop-down metal-oxide-semiconductor Gate terminal.

In one example, the controlled voltage source circuit further include:

Supplemental current generation module, for generating supplemental current；

The output end of supplemental current switching tube, the supplemental current generation module is coupled to this via the supplemental current switching tube The gate terminal of metal-oxide-semiconductor is pulled down, the supplemental current switching tube is in the opening process of the drop-down metal-oxide-semiconductor when the grid of the MOS switch pipe It is connected when pole tension changes to provide supplemental current to the gate terminal of the drop-down metal-oxide-semiconductor, to accelerate the gate-source of the drop-down metal-oxide-semiconductor The variation of voltage.

In one example, the supplemental current switching tube and the drop-down metal-oxide-semiconductor are all NMOS tube, the supplemental current switching tube Gate terminal is coupled to the gate terminal of the drop-down metal-oxide-semiconductor via phase inverter, to control the on-off of the supplemental current switching tube.

In one example, the dynamic regulation device further include:

Turn off analysis circuit, input terminal are coupled to the gate terminal of the MOS switch pipe, to detect the grid of the MOS switch pipe Pole tension, output end are coupled to the gate terminal of the supplemental current switching tube, to open in the variation of the grid voltage of the MOS switch pipe The supplemental current switching tube is opened, and turns off the supplemental current switching tube when the grid voltage of the MOS switch pipe is constant.

In one example, which includes:

Comparator, the first input end of the comparator are coupled to the gate terminal of the MOS switch pipe, and the second input terminal is via electricity Resistance is coupled to the gate terminal of the MOS switch pipe simultaneously via capacity earth, and output end is coupled to the grid of the supplemental current switching tube Extremely.

In one example, which includes:

Mirror image circuit, the mirror image of the charging and discharging currents for generating the dynamic current generation module to drop-down MOS The gate terminal of pipe is to provide the supplemental current.

In one example, the controlled voltage source module the pull-up metal-oxide-semiconductor by the pull-up control signal open when, to this The gate terminal of pull-up metal-oxide-semiconductor provides controlled voltage so that the gate source voltage of the pull-up metal-oxide-semiconductor rises to electricity with the adjustable speed of dynamic Source voltage, to drive the unlatching of the MOS switch pipe with variable driving capability.

In one example, loading condition is heavier, then the controlled voltage source module is provided to the gate terminal of the pull-up metal-oxide-semiconductor Controlled voltage variation is more slow, the speed of supply voltage is risen to slow down the gate source voltage of pull-up metal-oxide-semiconductor, to reduce driving energy Power, and loading condition is lighter, the controlled voltage variation which provides to the gate terminal of the pull-up metal-oxide-semiconductor is got over Fastly, the speed of supply voltage is risen to accelerate the gate source voltage of the pull-up metal-oxide-semiconductor, to improve driving capability.

In one example, which includes:

Charge and discharge capacitance is pulled up, is coupled between the gate terminal and source terminal of the pull-up metal-oxide-semiconductor；And

Dynamic current generation module is dynamically generated filling for size variation for the loading condition based on the MOS switch pipe Discharge current, the output end of the dynamic current generation module are coupled to the gate terminal of the pull-up metal-oxide-semiconductor, in the pull-up metal-oxide-semiconductor When unlatching, by the charge and discharge to the pull-up charge and discharge capacitance, controlled voltage is provided to the grid of the pull-up metal-oxide-semiconductor.

In one example, which generates smaller charging and discharging currents under heavier loading condition, The speed of supply voltage is risen to slow down the gate source voltage of the pull-up metal-oxide-semiconductor, and is generated under lighter loading condition bigger Charging and discharging currents, to accelerate the speed that the gate source voltage of pull-up metal-oxide-semiconductor rises to supply voltage.

In one example, it is opened between the gate terminal of the pull-up metal-oxide-semiconductor and the dynamic current generation module equipped with pull-up current Pipe is closed to control the on-off of the charging and discharging currents, the gate terminal of the pull-up current switching tube is coupled to pull-up control signal, with When pull-up control signal controls pull-up metal-oxide-semiconductor conducting, make pull-up current switching tube conducting with to the pull-up metal-oxide-semiconductor Gate terminal provides charging and discharging currents.

In one example, which further includes pull-up reset switch pipe, the source of the pull-up reset switch pipe One end in extreme and drain electrode end is coupled to the gate terminal of the pull-up MOS switch pipe, and the other end is PMOS tube in the pull-up metal-oxide-semiconductor When be coupled to power voltage terminal and be coupled to circuit ground terminal when the pull-up metal-oxide-semiconductor is NMOS tube, pull-up reset switch pipe tool There is the on or off state opposite with the pull-up current switching tube.

In one example, it is raw to be coupled to the dynamic current for one end in the source terminal and drain electrode end of the pull-up current switching tube At the output end of module, the other end is coupled to the gate terminal of the pull-up metal-oxide-semiconductor.

In one example, which further includes pull-up current mirror circuit, dynamic current generation module warp The gate terminal of the pull-up metal-oxide-semiconductor is coupled to by the pull-up current mirror circuit, which is coupled to the pull-up current Mirror circuit is to control the on-off of the pull-up current mirror circuit.

In one example, which includes:

The mirror image input terminal of third current lens unit, the third current lens unit couples the defeated of the dynamic current generation module Outlet；And

The mirror image input terminal of 4th current lens unit, the 4th current lens unit is coupled to via the pull-up current switching tube The mirror output of the mirror output of the third current lens unit, the 4th current lens unit is coupled to the pull-up metal-oxide-semiconductor Gate terminal.

In one example, which includes:

Error amplifier, one input end receive COMP voltage, and another input terminal is coupled to its output end, and output end passes through Resistance eutral grounding, wherein the COMP voltage is inversely proportional with load weight condition；And

Current mirroring circuit, the output end of the error amplifier are coupled to the input terminal of the current mirroring circuit with from the current mirror The circuit output charging and discharging currents.

According to another aspect of the present invention, a kind of drive system is provided, comprising:

MOS switch pipe；

The dynamic regulation device as described above for being used for driving signal；And

Driving circuit, for generating pull-up control signal and drop-down control signal.

In accordance with a further aspect of the present invention, a kind of driving method of dynamic regulation device for driving signal is provided, The driving signal is used to drive the switch of MOS switch pipe, which includes: pull-up metal-oxide-semiconductor, and gate terminal reception is used for The pull-up control signal of its on or off is controlled, one end in source terminal and drain electrode end is coupled to power voltage terminal, the other end It is coupled to the gate terminal of the MOS switch pipe；And drop-down metal-oxide-semiconductor, gate terminal receive the drop-down for controlling its on or off Signal is controlled, one end in source terminal and drain electrode end is coupled to circuit ground terminal, and the other end is coupled to the grid of the MOS switch pipe End,

The driving method includes:

When the drop-down metal-oxide-semiconductor controls signal by the drop-down and opens, controlled voltage is provided to the gate terminal of the drop-down metal-oxide-semiconductor So that the gate source voltage of the drop-down metal-oxide-semiconductor rises to supply voltage with the adjustable speed of dynamic, to be driven with variable driving capability Move the shutdown of the MOS switch pipe.

In one example, when loading condition is heavier, the controlled voltage variation provided to the gate terminal of the drop-down metal-oxide-semiconductor is got over It is slow, the speed of supply voltage is risen to slow down the gate source voltage of drop-down metal-oxide-semiconductor, so that driving capability is reduced, and loading condition is got over When light, the controlled voltage variation provided to the gate terminal of the drop-down metal-oxide-semiconductor is faster, to accelerate the gate source voltage of the drop-down metal-oxide-semiconductor The speed of supply voltage is risen to, to improve driving capability.

In one example, between the gate terminal and source terminal of the drop-down metal-oxide-semiconductor be equipped with drop-down charge and discharge capacitance, wherein this to The gate terminal of the drop-down metal-oxide-semiconductor provides controlled voltage

Loading condition based on the MOS switch pipe is dynamically generated the charging and discharging currents of size variation, in drop-down MOS When pipe is opened, by the charge and discharge to the drop-down charge and discharge capacitance, controlled voltage is provided to the grid of the drop-down metal-oxide-semiconductor.

In one example, smaller charging and discharging currents are generated, under heavier loading condition to slow down the drop-down metal-oxide-semiconductor Gate source voltage rises to the speed of supply voltage, and bigger charging and discharging currents are generated under lighter loading condition, under accelerating The gate source voltage of metal-oxide-semiconductor is drawn to rise to the speed of supply voltage.

In one example, this method further include:

When the variation of the grid voltage of the MOS switch pipe to the drop-down metal-oxide-semiconductor in the opening process of the drop-down metal-oxide-semiconductor Gate terminal provides supplemental current, to accelerate the variation of the gate source voltage of the drop-down metal-oxide-semiconductor.

In one example, this method further include:

When the pull-up metal-oxide-semiconductor controls signal by the pull-up and opens, controlled voltage is provided to the gate terminal of the pull-up metal-oxide-semiconductor So that the gate source voltage of the pull-up metal-oxide-semiconductor rises to supply voltage with the adjustable speed of dynamic, to be driven with variable driving capability Move the unlatching of the MOS switch pipe.

In one example, when loading condition is heavier, the controlled voltage variation provided to the gate terminal of the pull-up metal-oxide-semiconductor is got over It is slow, the speed of supply voltage is risen to slow down the gate source voltage of pull-up metal-oxide-semiconductor, so that driving capability is reduced, and loading condition is got over When light, the controlled voltage variation provided to the gate terminal of the pull-up metal-oxide-semiconductor is faster, to accelerate the gate source voltage of the pull-up metal-oxide-semiconductor The speed of supply voltage is risen to, to improve driving capability.

In one example, it is equipped with pull-up charge and discharge capacitance between the gate terminal and source terminal of the pull-up metal-oxide-semiconductor, wherein should There is provided controlled voltage to the gate terminal of the pull-up metal-oxide-semiconductor includes:

Loading condition based on the MOS switch pipe is dynamically generated the charging and discharging currents of size variation, in the pull-up When metal-oxide-semiconductor is opened, by the charge and discharge to the pull-up charge and discharge capacitance, controlled voltage is provided to the grid of the pull-up metal-oxide-semiconductor.

In one example, smaller charging and discharging currents are generated, under heavier loading condition to slow down the pull-up metal-oxide-semiconductor Gate source voltage rises to the speed of supply voltage, and bigger charging and discharging currents are generated under lighter loading condition, on accelerating The gate source voltage of metal-oxide-semiconductor is drawn to rise to the speed of supply voltage.

According to the solution of the present invention, in different output states, due to the variation of dynamic current IbiasD, controlled is linear The rate of change of voltage source also changes.When upper frequency, dynamic current IbiasD is smaller, controlled linear voltage The rate of change in source is small, and the conducting resistance variation of pull-up and drop-down MOSFET are slow, and dv/dt variation is slow in switching process, EMI It can be good.When frequency is lower, dynamic current IbiasD is larger.The change rate of controlled linear voltage source is big, pull-up and drop-down The conducting resistance variation of MOSFET is fast, and delay is small, and more loss is handed over to reduce.

Detailed description of the invention

After the detailed description for reading embodiment of the disclosure in conjunction with the following drawings, it better understood when of the invention Features described above and advantage.In the accompanying drawings, each component is not necessarily drawn to scale, and has similar correlation properties or feature Component may have same or similar appended drawing reference.

Fig. 1 is to show the circuit diagram of typical off-line type AC-DC conversion circuit；

Fig. 2 is to show the circuit diagram of typical BUCK conversion circuit；

Fig. 3 is to show the schematic diagram of traditional gate driving scheme；

Fig. 4 is to show the schematic diagram of traditional another gate driving scheme；

Fig. 5 is to show the equivalent analysis circuit diagram of typical MOSFET pipe；

The schematic diagram of switching waveform when Fig. 6 is the MOS switch pipe opening for showing traditional fixation driving capability；

The schematic diagram of switching waveform when Fig. 7 is the MOS switch pipe shutdown for showing traditional fixation driving capability；

Fig. 8 is to show the schematic diagram of grid dynamic driving according to an aspect of the present invention；

Fig. 9 is to show the schematic diagram of grid dynamic driving according to an aspect of the present invention；

Figure 10 is to show the opening when MOS switch pipe with dynamic driving ability according to an aspect of the present invention is opened Close the schematic diagram of waveform；

Figure 11 is opening when showing the MOS switch pipe shutdown with dynamic driving ability according to an aspect of the present invention Close the schematic diagram of waveform；

Figure 12 is the schematic diagram that dynamic driving is carried out according to frequency load shown according to an aspect of the present invention；

Figure 13 is the dynamic driver circuit figure for being used to pull up PMOS tube shown according to an aspect of the present invention；

Figure 14 is the dynamic driver circuit figure for being used to pull up NMOS tube shown according to an aspect of the present invention；

Figure 15 is the dynamic driver circuit figure for pull-down NMOS pipe shown according to an aspect of the present invention；

Figure 16 is to show the dynamic driver circuit figure for being used to pull up PMOS tube of an embodiment according to the present invention；

Figure 17 is to show the dynamic driver circuit figure for pull-down NMOS pipe of an embodiment according to the present invention；

Figure 18 is to show the dynamic drive for pulling up NMOS tube and pull-down NMOS pipe of an embodiment according to the present invention Dynamic circuit diagram；

Figure 19 is switch wave when showing the MOS switch pipe shutdown with dynamic driving ability according to an embodiment The schematic diagram of shape；

Figure 20 is the dynamic for being used to pull up NMOS tube and pull-down NMOS pipe shown according to another embodiment of the present invention Driving circuit figure；

Figure 21 is switch when showing the MOS switch pipe shutdown with dynamic driving ability according to another embodiment The schematic diagram of waveform；And

Figure 22 is the schematic diagram for showing dynamic current according to the present invention and loading frequency relation.

Specific embodiment

Below in conjunction with the drawings and specific embodiments, the present invention is described in detail.Note that below in conjunction with attached drawing and specifically real The aspects for applying example description is merely exemplary, and is understood not to carry out any restrictions to protection scope of the present invention.

Traditional gate driving scheme is difficult to balance in terms of electromagnetic interference EMI and drive efficiency.EMI adds with load Weight is gradually serious.At this point, generally requiring to reduce driving capability to improve EMI.However, the drive scheme with lower driving capability No doubt can reduce EMI in the case where heavier loads, however EMI problem itself is not serious when light load, at this time compared with Low driving capability affects drive efficiency.On the other hand, if improving driving capability in order to pursue efficiency, load compared with In the case where weight, EMI problem can be made more prominent.

Fig. 3 and Fig. 4 is to show the schematic diagram of traditional gate driving scheme.Drive scheme shown in Fig. 3 includes upper Metal-oxide-semiconductor and drop-down metal-oxide-semiconductor are drawn, the pull-up metal-oxide-semiconductor in figure is PMOS tube (referred to as pull-up PMOS tube), and drop-down metal-oxide-semiconductor is NMOS It manages (referred to as pull-down NMOS pipe).Pull-up PMOS tube is connected to supply voltage VCC, and pull-down NMOS pipe is with being connected to circuit (GND). Driving circuit 401 generates control signal S_PAnd S_NTo drive MOS switch pipe M1.

When pulling up PMOS tube conducting, pull-down NMOS pipe shutdown, MOS switch pipe M1 is opened；When pull-up PMOS tube shutdown, under When drawing NMOS transistor conduction, MOS switch pipe M1 is turned off.

The driving current when driving capability of driving circuit is connected with pull-up metal-oxide-semiconductor and drop-down metal-oxide-semiconductor is related, in other words, Related with pull-up metal-oxide-semiconductor and the drop-down conducting resistance of metal-oxide-semiconductor, because conducting resistance is bigger, driving current is smaller, and driving capability is got over It is weak, on the contrary conducting resistance is smaller, and driving current is bigger, and driving capability is bigger.

Since the conducting resistance of PMOS tube and NMOS tube is larger with technique change, the pull-up PMOS tube of larger size can be used And pull-down NMOS pipe.In order to improve EMI, need to reduce driving capability, therefore increase two resistance of Rp and Rn to increase conducting Resistance, to reduce driving current and then realize the purpose of reduction driving capability.Fig. 4 shows this scheme.This scheme passes through Fixed resistance Rp and Rn pulls up the conducting resistance of metal-oxide-semiconductor and drop-down metal-oxide-semiconductor to improve.However as described above, work as light load, When EMI problem is not prominent, higher conducting resistance results in lower driving capability.

Fig. 5 shows typical MOSFET equivalent analysis circuit.Optimization Switching Power Supply in, the optimization of MOSFET mainly from The parasitic structure of itself starts, and parasitic parameter determines the switch performance of MOSFET.The parasitism of Fig. 6 mainly includes following content: Grid grade resistance R_G, the parasitic capacitance C of grid end and source_GS, the parasitic capacitance C of grid end and drain terminal_GD, drain terminal resistance R_D, source side resistance R_SR, the parasitic capacitance C of drain terminal and source_DSAnd parasitic diode D.The parasitic parameter R of MOSFET_G、C_GD、C_GSSize determine Its switching speed.When parasitic parameter is certain, the driving current of grid grade determines the switching speed of MOSFET, this exactly schemes The theoretical basis that driving current adjusts driving capability is adjusted in 4 by conducting resistance.

By taking the conventional gate drive scheme in Fig. 3 as an example, illustrate that the switch of MOS switch pipe is special below with reference to Fig. 6 and Fig. 7 Property.Fig. 6 shows the work wave of the inverse-excitation type variator under discontinuous mode, and the switch conduction to illustrate MOS switch pipe is special Property.I in Fig. 6_LThe electric current for being MOS switch pipe from drain terminal to source, S_NAnd S_PRespectively pull-down NMOS pipe and pull-up PMOS tube Signal is controlled, VGS is the voltage waveform for driving end, and VDS is the drain terminal of MOS switch pipe and the waveform of source, and Rds_PMOS is upper Draw the conducting resistance of PMOS tube.PMOS tube impedance very little is pulled up when conducting, closing when is very big.

At the t0 moment, open signal, drop-down control signal S can be generated by logic_NFrom high to low, S_NControl pull-down NMOS Pipe shutdown.By certain unlatching dead time (t0~t1), the pull-up control signal S in t1_PControl pull-up PMOS tube, makes it Conducting.Since the PMOS tube of conducting has fixed conducting resistance Rds_PMOS, so there are certain opening processes.

Typically MOS switch pipe conducting is divided into 3 stages, and t1~t2 (opening delay) is VGS from 0 to Vth stage, drives Electric current mainly gives parasitic capacitance C_GSCharging.The MOS switch pipe is still in off state, VDS and I_LWaveform is constant.VDS voltage value By the turn ratio of transformer, it can be 300V that the parameters such as input voltage, which determine,.I_LIt is 0 due to not turning on electric current.T2~t3 is VGS The stage is remained unchanged, driving current mainly gives parasitic capacitance C_DSCharging.The stage is also Miller platform, due to MOS switch pipe Conducting, it is low-voltage that VDS, which starts to change from high voltage, and the slope dv/dt of VDS decline is mainly by parasitic capacitance C_DSAnd Rds_PMOS It determines.Presence of the process due to drain terminal parasitic capacitance over the ground, I_LForm peak current, the variation for peak value comparison method Device can generally shield the peak current due to being easy to generate to judge by accident to peak point current.T3~t4 stage is to open final stage, is driven Streaming current continues to C_GSCharging, it is VCC that MOS switch pipe voltage changes near vth, and peak point current is risen with fixed slope, Its slope is determined by input voltage and transformer inductance.

By three phases as above, MOS switch pipe is begun to turn on.In t2~t3 stage, due to voltage from VDS (such as It 300V) changes to and is close to 0 speed quickly, general 100ns or so, so will lead to EMI problem.It, can be in open stage It sees the voltage VDS of MOS switch pipe and and flows through the electric current I of MOS switch pipe_LHand over more area be essentially 0, so loss compared with Less, the problem of main problem is EMI at this time.

It will be appreciated from fig. 6 that the constraint of the conducting resistance Rds_PMOS fixed due to driving capability, in order to obtain preferably EMI only uses biggish conducting resistance, such as increases resistance Rp shown in Fig. 4.At this point, although EMI can be reduced, It is to there is biggish unlatching to postpone.Although loss is less, it also will increase the partition losses.And in light load, EMI problem In situation not outstanding, biggish unlatching delay is not necessarily to.

The switch OFF characteristic of MOS switch pipe can illustrate explanation by Fig. 7.At the t5 moment, peak point current I_LReach Ideal peak point current, at the t6 moment, pull-up control signal S_PControl pull-up PMOS tube, turns it off, drop-down control signal S_NControl Pull-down NMOS pipe processed makes its opening.Since the NMOS tube of conducting has fixed conducting resistance Rds_NMOS, so existing certain Turn off process.

At the t5 moment, when electric current reaches peak point current, begun to turn off in t6 moment MOS switch pipe, t5~t6 is that shutdown is dead Area's time.The shutdown of typical MOS switch pipe is divided into 4 periods, and t6~t7 belongs to turn-off delay, is MOS switch pipe grid grade Voltage VGS decline stage first time.The VGS voltage of the MOS switch pipe in the stage drops to the (Vth+I that overdrives from VCC_MOSFET/ g_MOSFET), the required time is determined by grid capacitance and driving resistance Rds_NMOS, can simplify the RC circuit for level-one.It should Stage is due to parasitic capacitance C_GSPresence, a little small decline can also occur for the VCS waveform for being coupled to current sampling port.T7~t8 The stage is remained unchanged for VGS, also referred to as shutdown Miller platform, driving current mainly gives parasitic capacitance C at this time_DSCharging.The rank Section is similar with t2~t3, and due to the conducting of NMOS tube, it is high voltage, the slope dv/ that VDS rises that VDS, which starts to change from low-voltage, Dt is mainly by parasitic capacitance C_DSIt is determined with Rds_NMOS.T8~t9 is the second segment fall time of VGS, is off final stage, Threshold voltage vth is fallen to from overdrive voltage, stage peak point current I_LElectric current drops to zero.VGS changes from vth after t9 It is 0.It can analyze to obtain and more loss handed over to exist in t7~t9 period.

Similarly, in the off-phases of MOS switch pipe, due to the pact for the conducting resistance Rds_NMOS that driving capability is fixed Beam, preferable EMI, only uses biggish conducting resistance, increases resistance Rn for example, as shown in figure 4 in order to obtain.Although can To reduce EMI, but there is biggish unlatching to postpone, more loss is handed over to increase, while biggish delay is being absolutely not at light load It is necessary, because bringing biggish peak point current, so that stand-by power consumption increases.

In the present invention, a kind of dynamically drive scheme is provided, in the case where heavier loads, reduces driving capability, To reduce EMI problem, on the other hand, in the case where light load, driving capability is improved, reduces switch to improve switching speed Delay.As described above, in the case where the parameter of MOS switch pipe is certain, driving capability and pull-up metal-oxide-semiconductor and drop-down metal-oxide-semiconductor Conducting resistance is related.Therefore, when opening pull-up metal-oxide-semiconductor and drop-down metal-oxide-semiconductor, by making gate source voltage absolute value | VGS | from 0 VCC is gradually become gradually decrease conducting resistance, such as PMOS tube, makes gate terminal voltage from VCC gradual change to 0, for NMOS tube makes gate terminal voltage from 0 gradual change to VCC.

By taking NMOS tube as an example, work as heavier loads, when needing to reduce driving capability, gate terminal voltage can be made with slower speed Degree rises to VCC from 0, to make conducting resistance gradually be lower in the process, so that NMOS tube remains higher in opening procedure Conducting resistance, play the role of reduction driving current, reduce driving capability.Work as light load, EMI problem does not protrude, therefore When wishing that there is faster switching speed, gate terminal voltage can be made to rise to VCC from 0 with faster speed, to make electric conduction Resistance is quickly reduced to minimum, so that NMOS tube has lower conducting resistance in opening procedure, plays increase driving electricity Stream, promotes the effect of driving capability.

Therefore, it by adjusting the pace of change of the grid voltage of pull-up metal-oxide-semiconductor and/or drop-down metal-oxide-semiconductor, dynamically adjusts and drives The size of kinetic force.

Fig. 8 is to show the schematic diagram of grid dynamic driving according to the present invention, and it is PMOS that pull-up metal-oxide-semiconductor, which has been shown in particular, The situation of pipe.As shown, increasing controlled electricity between pull-up PMOS tube and driving circuit compared to traditional gate driving Potential source module, the controlled voltage source module are used to be pulled up control signal S in pull-up PMOS tube_PWhen unlatching, PMOS is pulled up The gate terminal of pipe provides controlled voltage and rises to supply voltage so as to pull up the gate source voltage of PMOS tube with the adjustable speed of dynamic, To with the unlatching of variable driving capability driving MOS switch pipe M1.

Loading condition is heavier, the controlled voltage variation which provides to the gate terminal of the pull-up NMOS tube It is more slow, the speed of supply voltage is risen to slow down the gate source voltage of pull-up NMOS tube, so that driving capability is reduced, and load bar Part is lighter, and the controlled voltage variation that the gate terminal that controlled voltage source module pulls up NMOS tube provides is faster, to accelerate to pull up MOS The gate source voltage of pipe rises to the speed of supply voltage, to improve driving capability.Here controlled voltage source, upper trombone slide, drop-down Pipe constitutes the dynamic regulation device for driving signal of the invention.

As shown in figure 8, the controlled voltage source includes two switch S1 and S2, charge and discharge capacitance C and dynamic current source I. S2 controls the charging to capacitor C, and S1 controls the electric discharge to capacitor C.Discharge process C1 voltage changes to 0 from VCC, in pull-up PMOS The gate terminal of pipe generates the voltage source V of linear change_{DRIVER_P}, pull up the resistance of PMOS tube close to linear is from big resistance variations Small resistance.

Here, pass through adjust dynamic current source I provide electric current IbiasD size, so that it may control pull-up PMOS tube from Big resistance becomes the driving capability when rate of small resistance, the i.e. unlatching of control MOS switch pipe M1.

Note that capacitor C here can be additional capacitor, it is also possible to pull up the parasitic capacitance of PMOS tube.

Fig. 9 is to show the schematic diagram of grid dynamic driving according to the present invention, and it is NMOS that pull-up metal-oxide-semiconductor, which has been shown in particular, The situation of pipe.As shown, increasing controlled electricity between pull-up NMOS tube and driving circuit compared to traditional gate driving Potential source module, the controlled voltage source module are used to be pulled up control signal S in pull-up NMOS tube_PWhen unlatching, NMOS is pulled up The gate terminal of pipe provides controlled voltage and rises to supply voltage so as to pull up the gate source voltage of NMOS tube with the adjustable speed of dynamic, To with the unlatching of variable driving capability driving MOS switch pipe 1.

As shown in figure 9, the controlled voltage source includes two switch S1 and S2, charge and discharge capacitance C and dynamic current source I. S2 controls the charging to capacitor C, and S1 controls the electric discharge to capacitor C.Charging process C1 voltage changes to VCC from 0, in pull-up NMOS The gate terminal of pipe generates the voltage source V of linear change_{DRIVER_N}, pull up the resistance of NMOS tube close to linear is from big resistance variations Small resistance.

Here, pass through adjust dynamic current source I provide electric current IbiasD size, so that it may control pull-up NMOS tube from Big resistance becomes the driving capability when rate of small resistance, the i.e. unlatching of control MOS switch pipe M1.

Note that capacitor C here can be additional capacitor, it is also possible to pull up the parasitic capacitance of NMOS tube.

Fig. 8 and Fig. 9 illustrate only for pull up metal-oxide-semiconductor dynamic driving, for pull down metal-oxide-semiconductor dynamic driving principle with It is identical to pull up metal-oxide-semiconductor, therefore is not shown.Dynamic driving can be only applied to pull-up metal-oxide-semiconductor with dynamic driving MOS switch pipe Unlatching, be only used for drop-down metal-oxide-semiconductor and be applied to pull-up metal-oxide-semiconductor and drop-down with the shutdown of dynamic driving MOS switch pipe or simultaneously Both metal-oxide-semiconductors are switched on and off the two with dynamic driving MOS switch pipe.

Figure 10 and Figure 11 is shown when the MOS switch pipe according to an aspect of the present invention with dynamic driving ability is opened Switching waveform when switching waveform and shutdown.

Figure 10 is the waveform diagram when switch of a dynamic driving ability of the invention is opened, and VCS waveform is electricity Flow sampling resistor R_SVoltage waveform, VGS be drive end voltage waveform, VDS be MOS switch pipe drain terminal and source waveform, S_N And S_PThe respectively control signal of pull-down NMOS pipe and pull-up PMOS tube.Rds_PMOS is the conducting resistance for pulling up PMOS tube, with Unlike Fig. 6, the conducting resistance on-fixed value, but linear change, i.e. conducting resistance by gradually becoming smaller greatly, it can be found that Compared with fixed conducting resistance (Fig. 6), in t2~t3 stage, since resistance is larger, slow dv/dt is generated, so as to It is effective to reduce EMI.

Switching waveform schematic diagram when Figure 11 is the switch OFF of a dynamic driving ability of the invention, wherein Rds_ NMOS is the conducting resistance of pull-down NMOS pipe, unlike Fig. 7, the conducting resistance on-fixed value, but linear change, it leads Resistance be powered by gradually becoming smaller greatly.It can be found that, in t7~t8 stage, since resistance is larger, being produced compared with fixed conducting resistance Raw slow dv/dt, so as to effectively reduce EMI.

Figure 12 is of the invention one schematic diagram that dynamic driving is carried out according to frequency load.The figure illustrates pull-up MOS How tube resistor and drop-down metal-oxide-semiconductor resistance according to load change driving capability.S_PSignal, the electricity of dynamic driving are controlled for pull-up Flowing IbiasD can voltage signal, COMP (compensation) voltage signal, line loss current signal, Ton signal, duty ratio by VCC Signal obtains.

When underloading, there are lower VCC, higher COMP voltage, biggish line loss electric current, lesser Ton and duty Than.When heavy duty, there are higher VCC voltage, lesser COMP voltage, lesser line loss electric current, biggish Ton and duty Than.

With gradually becoming smaller for load, frequency and peak point current can also become smaller accordingly, and the EMI of generation also can gradually become It is small, so being exactly while meeting EMI to require one of the advantages of dynamic driving, according to loading condition, gradual quickening drives energy Power, the friendship for reducing MOS switch pipe are more lost.Simultaneously when zero load, there is strongest driving capability, can effectively reduce pass Break and postpone and increased peak point current, to play the role of reducing stand-by power consumption.

Therefore, the index of loading condition can be able to reflect based on COMP voltage etc. to provide IbiasD, to adjust driving energy Power.For example, the IbiasD provided can be directly proportional to COMP voltage, load is heavier, and COMP voltage is smaller, and IbiasD is smaller, driving Ability is smaller, to mitigate EMI, conversely, load is lighter, COMP voltage is bigger, and Ibias is bigger, and driving capability is stronger, to mention Switching speed is risen, power consumption is reduced.Set forth below is providing the embodiment of IbiasD based on COMP voltage, but may be based on appointing What index related with loading condition provides IbiasD.

Figure 13 is the dynamic driver circuit figure for being used to pull up PMOS tube shown according to an aspect of the present invention.In the figure It pulls up metal-oxide-semiconductor and uses PMOS tube.As shown, the source electrode of pull-up PMOS tube is coupled to VCC, drain electrode is coupled to MOS switch pipe (not Show) gate terminal, while be coupled to drop-down metal-oxide-semiconductor source terminal or in drain electrode end one end (in figure be NMOS tube drain electrode End).

Controlled voltage source module is realized by charge and discharge capacitance C and dynamic current generation module 1302.Pull up PMOS tube There is charge and discharge capacitance C between gate terminal and source terminal.Charge and discharge capacitance C can be the parasitic electricity of the primary source of PMOS tube-grid Hold, is also possible to the capacitor of additional.

The gate terminal for pulling up PMOS tube receives the pull-up control signal S for carrying out driving circuit 1301_PPMOS is pulled up with control The turn-on and turn-off of pipe.For example, working as S_PWhen for low level, pull-up PMOS tube conducting.

Particularly charging and discharging currents of the dynamic current generation module 1302 to be dynamically generated size variation.Dynamic current The output end of generation module 1302 is coupled to the gate terminal of pull-up PMOS tube, to provide this when pull-up PMOS tube needs to open Charging and discharging currents, so that the gate source voltage of pull-up PMOS tube rises to supply voltage at a predetermined velocity.Here pull-up metal-oxide-semiconductor is PMOS tube, therefore, when needing to open, dynamic current generation module 1302 actually provides discharge current, to make The gate terminal of PMOS tube is drawn to drop to 0 from VCC, i.e. gate-source pressure absolute value of the difference is VCC.

In order to control the on-off of charging and discharging currents IbiaD, can dynamic current generation module 1302 and pull-up PMOS tube it Between be equipped with pull-up current switching tube P1, be here PMOS tube.The gate terminal of pull-up current switching tube P1 is coupled to driving circuit 1301 pull up control signal to receive, to pass through pull-up control signal S_PCarry out control switch, and then controls the on-off of IbiasD. For example, in S_PWhen for low level to open pull-up PMOS tube, S_PLow level is first connected pull-up current switching tube P1, to make It obtains dynamic current generation module 1302 and PMOS tube offer charging and discharging currents (specially discharge current) is provided, so that pull-up PMOS The grid voltage of pipe is gradually reduced to 0 from VCC, becomes opening.

It is worth noting that, when opening pull-up PMOS tube, it is desirable to which its grid voltage is gradually reduced to 0 from VCC, gradually to beat Open pull-up PMOS tube.However, being then not intended to when shutdown pulls up PMOS tube in this way, and being off that The faster the better.It therefore, should be by Control voltage source module can also design pull-up reset switch pipe P2, be here P pipe.

The source terminal of pull-up reset switch pipe P2 is coupled to VCC, and drain electrode end is coupled to the gate terminal of pull-up PMOS tube, grid End is coupled to driving circuit 1301 to receive the inversion signal for pulling up control signal, so that pull-up reset switch pipe P2 has The on or off state opposite with pull-up current switching tube P1.

When needing to turn off pull-up PMOS tube, pull-up control signal S_PBecome high level, pull-up current switching tube P1 is closed It is disconnected, and pull up reset switch pipe P2 and be opened, so that the gate terminal of pull-up PMOS tube is directly connected to supply voltage VCC, from And immediately turn off pull-up PMOS tube.

Figure 14 is the dynamic driver circuit figure for being used to pull up NMOS tube shown according to an aspect of the present invention.In the figure It pulls up metal-oxide-semiconductor and uses NMOS tube.As shown, the drain electrode of pull-up NMOS tube is coupled to VCC, source electrode is coupled to MOS switch pipe (not Show) gate terminal, while be coupled to drop-down metal-oxide-semiconductor source terminal or in drain electrode end one end (in figure be NMOS tube drain electrode End).

Controlled voltage source module is realized by charge and discharge capacitance C and dynamic current generation module 1402.Pull up NMOS tube There is charge and discharge capacitance C between gate terminal and source terminal.Charge and discharge capacitance C can be the parasitic electricity of the primary source of NMOS tube-grid Hold, is also possible to the capacitor of additional.

The gate terminal for pulling up NMOS tube receives the pull-up control signal for carrying out driving circuit 1301NMOS is pulled up with control The turn-on and turn-off of pipe.For example, working asWhen for high level, NMOS transistor conduction is pulled up.

Particularly, charging and discharging currents of the dynamic current generation module 1402 to be dynamically generated size variation.Dynamic electric The output end of stream generation module 1402 is coupled to the gate terminal of pull-up NMOS tube, to provide when pull-up NMOS tube needs to open The charging and discharging currents, so that the gate source voltage of pull-up NMOS tube rises to supply voltage at a predetermined velocity.Here pull-up metal-oxide-semiconductor For NMOS tube, therefore, when needing to open, dynamic current generation module 1402 actually provides charging current, to make The gate terminal for pulling up NMOS tube is raised to VCC from 0, i.e. gate-source pressure absolute value of the difference is VCC.

In order to control the on-off of charging and discharging currents IbiaD, can dynamic current generation module 1402 and pull-up NMOS tube it Between be equipped with pull-up current switching tube N1, be here NMOS tube.The gate terminal of pull-up current switching tube N1 is coupled to driving circuit 1401 pull up control signal to receiveTo pass through pull-up control signalCarry out control switch, and then controls the logical of IbiasD It is disconnected.For example,When for high level to open pull-up NMOS tube,High level is first connected pull-up current switching tube N1, from And make dynamic current generation module 1402 pull up NMOS tube and charging and discharging currents (specially charging current) is provided, so that pull-up The grid voltage of NMOS tube, by VCC is upgraded to, becomes opening from 0.

It is worth noting that, when opening pull-up NMOS tube, it is desirable to which its grid voltage is gradually upgraded to VCC from 0, gradually to beat Open pull-up NMOS tube.However, being then not intended to when shutdown pulls up NMOS tube in this way, and being off that The faster the better.Therefore, controlled Voltage source module can also design pull-up reset switch pipe N2, be here NMOS tube.

The source terminal of pull-up reset switch pipe N2 is coupled to circuit ground terminal, and drain electrode end is coupled to the grid of pull-up NMOS tube End, gate terminal are coupled to driving circuit 1401 to receive the inversion signal for pulling up control signal, so that pull-up reset switch Pipe N2 has the on or off state opposite with pull-up current switching tube N1.

When needing to turn off pull-up NMOS tube, pull-up control signalBecome low level, pull-up current switching tube N1 is closed It is disconnected, and pull up reset switch pipe N2 and be opened, so that the gate terminal of pull-up NMOS tube is directly connected to circuit ground terminal, from thirty years of age That is shutdown pull-up NMOS tube.

Figure 15 is the dynamic driver circuit figure for pull-down NMOS pipe shown according to an aspect of the present invention.In the figure It pulls down metal-oxide-semiconductor and uses NMOS tube.As shown, the source electrode of pull-down NMOS pipe is coupled to circuit ground terminal, drain electrode is coupled to MOS switch The gate terminal of pipe (not shown), while being coupled to the source terminal of pull-up metal-oxide-semiconductor or one end in drain electrode end (is PMOS tube in figure Drain electrode end).

Controlled voltage source module is realized by charge and discharge capacitance C and dynamic current generation module 1502.Pull-down NMOS pipe There is charge and discharge capacitance C between gate terminal and source terminal.Charge and discharge capacitance C can be the parasitic electricity of the primary source of NMOS tube-grid Hold, is also possible to the capacitor of additional.

The gate terminal of pull-down NMOS pipe receives the pull-up control signal S for carrying out driving circuit 1501_NTo control pull-down NMOS The turn-on and turn-off of pipe.For example, working as S_NWhen for high level, pull-down NMOS pipe conducting.

Particularly, charging and discharging currents of the dynamic current generation module 1502 to be dynamically generated size variation.Dynamic electric The output end of stream generation module 1502 is coupled to the gate terminal of pull-down NMOS pipe, to provide when pull-down NMOS pipe needs to open The charging and discharging currents, so that the gate source voltage of pull-down NMOS pipe rises to supply voltage at a predetermined velocity.Here drop-down metal-oxide-semiconductor For NMOS tube, therefore, when needing to open, dynamic current generation module 1502 actually provides charging current, to make The gate terminal of pull-down NMOS pipe is raised to VCC from 0, i.e. gate-source pressure absolute value of the difference is VCC.

In order to control the on-off of charging and discharging currents IbiaD, can dynamic current generation module 1502 and pull-down NMOS pipe it Between be equipped with pull-down current switching tube N1, be here NMOS tube.The gate terminal of pull-down current switching tube N1 is coupled to driving circuit 1501 pull down control signal to receive, to pass through drop-down control signal S_NCarry out control switch, and then controls the on-off of IbiasD. For example, in S_NWhen for high level to open pull-down NMOS pipe, S_NHigh level is first connected pull-down current switching tube N1, to make It obtains dynamic current generation module 1502 and NMOS tube offer charging and discharging currents (specially charging current) is provided, so that pull-down NMOS The grid voltage of pipe is gradually upgraded to VCC from 0, becomes opening.

It is worth noting that, when opening pull-down NMOS pipe, it is desirable to which its grid voltage is gradually upgraded to VCC from 0, gradually to beat Open pull-down NMOS pipe.However, when turning off pull-down NMOS pipe, then it is not intended in this way, and being off that The faster the better.It therefore, should be by Control voltage source module can also design drop-down reset switch pipe N2, be here NMOS tube.

The source terminal of drop-down reset switch pipe N2 is coupled to circuit ground terminal, and drain electrode end is coupled to the grid of pull-down NMOS pipe End, gate terminal are coupled to driving circuit 1501 to receive the inversion signal for pulling down control signal, so that drop-down reset switch Pipe N2 has the on or off state opposite with pull-down current switching tube N1.

When needing to turn off pull-down NMOS pipe, drop-down control signal S_NBecome low level, pull-down current switching tube N1 is closed It is disconnected, and pull down reset switch pipe N2 and be opened, so that the gate terminal of pull-down NMOS pipe is directly connected to circuit ground terminal, from thirty years of age Turn off pull-down NMOS pipe.

Due to drop-down metal-oxide-semiconductor be PMOS tube situation only twin voltage power in the case where use, and principle with for The principle of NMOS tube is identical, therefore, repeats no more.

Figure 16 shows the dynamic driver circuit figure of an embodiment according to the present invention.Dynamic driving shown in Figure 16 The difference of scheme and dynamic driving scheme shown in Figure 13 is to be added to current mirroring circuit, to be passed by current mirroring circuit Pass the charging and discharging currents of dynamic current generation module generation.

As shown in figure 16, pull-up metal-oxide-semiconductor uses PMOS tube.The source electrode of pull-up PMOS tube is coupled to VCC, and drain electrode is coupled to The gate terminal of MOS switch pipe (not shown), at the same be coupled to drop-down metal-oxide-semiconductor source terminal or one end in drain electrode end (be in figure The drain electrode end of NMOS tube).Pulling up has charge and discharge capacitance C between the gate terminal and source terminal of PMOS tube.Charge and discharge capacitance C can To be the primary source of PMOS tube-grid parasitic capacitance, it is also possible to the capacitor of additional.

It is similar with Figure 13, it also include dynamic current generation module 1602 in Figure 16 to generate charging and discharging currents IbiasD, In addition, being also provided with on-off of the pull-up circuit switching tube P1 to control charging and discharging currents.In addition, being also provided with pull-up in Figure 16 Reset switch pipe P2.

In embodiment, it is provided with what pull-up current mirror circuit generated dynamic current generation module 1602 in Figure 16 Current mirror to the gate terminal for pulling up PMOS tube, pull-up current mirror circuit can control on-off by pull-up current switching tube P1, And then control the offer of charging and discharging currents.

In the embodiment shown in Figure 16, current mirroring circuit shown in includes two current lens units.First current mirror list Member is made of PMOS tube P3 and P4, and the second current lens unit is made of NMOS tube N1 and N2.Dynamic current generation module 1602 Output end is coupled to the mirror image input terminal of the first current lens unit, the i.e. drain electrode end of P3, the mirror image output of the first current lens unit End is that the drain electrode end of P4 is coupled to the mirror image input terminal i.e. drain electrode of N1 of the second current lens unit via pull-up current switching tube P1 End, mirror output, that is, N2 drain electrode end of the second current lens unit are coupled to the gate terminal of pull-up PMOS tube.

Here the image ratio of the first current lens unit and the second current lens unit can be equal to 1, can also be greater than 1 with right IbiasD is suitably amplified.

The gate terminal of pull-up current switching tube P1 is coupled to driving circuit 1601 to receive and pull up control signal, to pass through Pull-up control signal S_PCarry out control switch, and then controls the on-off of mirror image circuit, the i.e. on-off of IbiasD.For example, in S_PFor low electricity When the flat pull-up PMOS tube with opening, S_PLow level is first connected pull-up current switching tube P1, and current mirroring circuit is turned at this time, So that the IbiasD of dynamic current generation module 1602 is mirrored to the gate terminal of pull-up PMOS tube, so that pull-up PMOS tube Grid voltage be gradually reduced to 0 from VCC, become opening.Due to being discharge current here, it is possible to think that dynamic current generates The circuit that module 1602 generates is negative current, as shown by the arrow.

Pulling up reset switch pipe P2 has the on or off state opposite with pull-up current switching tube P1.It is needing to turn off When pulling up PMOS tube, pull-up control signal S_PBecome high level, pull-up current switching tube P1 is turned off, and pulls up reset switch pipe P2 is opened, so that the gate terminal of pull-up PMOS tube is directly connected to supply voltage VCC, to immediately turn off pull-up PMOS Pipe.

Figure 17 shows the dynamic driver circuit figures of an embodiment according to the present invention.Dynamic driving shown in Figure 17 The difference of scheme and dynamic driving scheme shown in Figure 15 is to be added to current mirroring circuit, to be passed by current mirroring circuit Pass the charging and discharging currents of dynamic current generation module generation.

As shown in figure 17, drop-down metal-oxide-semiconductor uses NMOS tube.The source electrode of pull-down NMOS pipe is coupled to circuit ground terminal, and drain coupling It is connected to the gate terminal of MOS switch pipe (not shown), while being coupled to the source terminal of pull-up metal-oxide-semiconductor or one end (figure in drain electrode end In be PMOS tube drain electrode end).There is charge and discharge capacitance C between the gate terminal and source terminal of pull-down NMOS pipe.Charge and discharge electricity Holding C can be the primary source of NMOS tube-grid parasitic capacitance, be also possible to the capacitor of additional.

It is similar with Figure 15, it also include dynamic current generation module 1702 in Figure 17 to generate charging and discharging currents IbiasD, In addition, being also provided with on-off of the pull-down circuit switching tube N1 to control charging and discharging currents.In addition, being also provided with drop-down in Figure 17 Reset switch pipe N2.

In embodiment, it is provided with what pull-down current mirror circuit generated dynamic current generation module 1702 in Figure 17 For current mirror to the gate terminal of pull-down NMOS pipe, pull-down current mirror circuit can control on-off by pull-down current switching tube N1, And then control the offer of charging and discharging currents.

In the embodiment shown in Figure 17, current mirroring circuit shown in includes two current lens units.First current mirror list Member is made of NMOS tube N3 and N4, and the second current lens unit is made of PMOS tube P1 and P2.Dynamic current generation module 1702 Output end is coupled to the mirror image input terminal of the first current lens unit, the i.e. drain electrode end of N3, the mirror image output of the first current lens unit End is that the drain electrode end of N4 is coupled to the mirror image input terminal i.e. drain electrode of P1 of the second current lens unit via pull-down current switching tube N1 End, mirror output, that is, P2 drain electrode end of the second current lens unit are coupled to the gate terminal of pull-down NMOS pipe.

The gate terminal of pull-down current switching tube N1 is coupled to driving circuit 1701 to receive and pull down control signal, to pass through Drop-down control signal S_NCarry out control switch, and then controls the on-off of mirror image circuit, the i.e. on-off of IbiasD.For example, in S_NFor high electricity When putting down to open pull-down NMOS pipe, S_NHigh level is first connected pull-down current switching tube N1, and current mirroring circuit is turned at this time, So that the IbiasD of dynamic current generation module 1702 is mirrored to the gate terminal of pull-down NMOS pipe, so that pull-down NMOS pipe Grid voltage be gradually upgraded to VCC from 0, become opening.Due to being charging current here, it is possible to think that dynamic current generates The circuit that module 1702 generates is positive current, as shown by the arrow.

Pulling down reset switch pipe N2 has the on or off state opposite with pull-down current switching tube N1.It is needing to turn off When pull-down NMOS pipe, drop-down control signal S_NBecome low level, pull-down current switching tube N1 is turned off, and pulls down reset switch pipe N2 is opened, so that the gate terminal of pull-down NMOS pipe is directly connected to circuit ground terminal, to immediately turn off pull-down NMOS pipe.

Figure 18 shows the dynamic driver circuit figure of an embodiment according to the present invention.In Figure 18, to pull-up metal-oxide-semiconductor and Drop-down metal-oxide-semiconductor has all used dynamic driving technology of the invention.For pull up PMOS tube dynamic driving scheme in Figure 16 Through being described, pull-up metal-oxide-semiconductor here is despite NMOS tube, but principle is identical with Figure 16, therefore repeats no more.

For pull-down NMOS pipe, dynamic driving is roughly the same with Figure 17, and difference is only that controlled voltage source module wraps again A supplemental current generation module has been included for introducing a supplemental current, to be to close MOS to open opening pull-down NMOS pipe Accelerate closing process when closing pipe M1 (not shown).

Return to Figure 11, MOS switch pipe M1 shutdown during, VDS variation period be t7-t8, this period vd/ Vt is slower, and EMI is smaller.However, VDS 0, EMI problem is lighter within the t6-t7 period, it is hoped that there will be faster shutdown speed at this time Degree, therefore, can shorten the turn-off time if can accelerate the pace of change of Rds_NMOS within this period, will not influence simultaneously EMI performance.

For this purpose, controlled voltage source module can control the on-off of supplemental current, supplement electricity by supplemental current switching tube The output end of stream generation module is coupled to the gate terminal of pull-down NMOS pipe, supplemental current switch via the supplemental current switching tube Pipe is connected in the opening process of pull-down NMOS pipe when the variation of the grid voltage of MOS switch pipe to pull down the grid of NMOS tube End provides supplemental current, to accelerate the variation of the gate source voltage of pull-down NMOS pipe.

The supplemental current generation module includes mirror image circuit, the charging and discharging currents for generating dynamic current generation module Mirror image provides the supplemental current to the gate terminal of pull-down NMOS pipe.For example, according to the embodiment of Figure 18, the second current lens unit It is also provided with PMOS tube P23 and constitutes mirror-image structure arranged side by side together with P21, P22.I.e. in addition to as the second current lens unit The gate terminal that one mirror output, that is, P22 drain electrode pulls down NMOS tube is provided except mirror image IbiasD electric current, and the drain electrode of P23 is made Drop-down is coupled to by supplemental current switching tube (being NMOS tube N25 here) for the second mirror output of the second current lens unit The gate terminal of NOMS pipe.

Under this arrangement, when the gate terminal voltage of pull-down NMOS pipe is lower, the output of NOT gate I1 is height, then opens Supplemental current switching tube N25 extraly increases charging current all the way, the controlled voltage of the gate terminal of pull-down NMOS pipe by P23 Source variation is very fast.After the grid voltage of pull-down NMOS pipe is higher than threshold voltage vth, the output of NOT gate I1 be it is low, close the benefit The charging current filled.

Figure 19 shows the effect of the supplemental current.As shown in figure 19, in the t6-t7 period, it is two that Rds_NMOS, which is divided to, In the stage, at first faster, this period is exactly the period that supplemental current switching tube opens offer supplemental current to stage decrease speed, when Supplemental current is declined again with slightly slow speed after closing.

Figure 20 shows the dynamic driver circuit figure of an embodiment according to the present invention.The difference of Figure 20 and Figure 18 is, The on-off of supplemental current switching tube N25 is controlled in Figure 18 by NOT gate I1.However, this mode and inaccurate, as shown in figure 19, Within the t6-t7 period, only it is to provide supplemental current for the previous period, but desirably in the entire t6-t7 period It provides supplemental current all inside to accelerate speed, and stops supplemental current at once after the t7 moment.

For this purpose, the gate terminal of supplemental current switching tube is designed to receive directly related to the grid voltage of MOS switch pipe The supplemental current switching signal of connection, so that when the grid voltage of MOS switch pipe is slowly varying, supplemental current switching signal control Supplemental current switching tube N25 processed is turned off so that supplemental current is truncated, and when the grid voltage of MOS switch pipe is constant, supplemental current Switching signal controls supplemental current switching tube N25 conducting to open supplemental current.

The grid voltage that turn off analysis circuit 2003 analyzes MOS switch pipe M1 is used in Figure 20.As shown in figure 20, it turns off The input terminal of analysis electric current 2003 is coupled to the gate terminal of MOS switch pipe M1, and to detect grid voltage, output end is coupled to supplement The gate terminal of current switch pipe N25, to provide above-mentioned supplemental current switching signal.

In the example shown in Figure 20, which may include comparator COM, and the first of the comparator is defeated Entering the gate terminal that end is coupled to MOS switch pipe M1, the second input terminal is coupled to the gate terminal of MOS switch pipe M1 via resistance R2, It is grounded simultaneously via capacitor C3, output end is coupled to the gate terminal of supplemental current switching tube N25.

The signal of the second input terminal input of comparator COM is actually the version of the delay of first input end input signal Whether this, can analyze the grid voltage for obtaining MOS switch pipe M1 by the comparison of the two slowly varying.

Since in Miller platform phase, GATE (grid) voltage is basically unchanged.By comparator COM and resistance R2 and C3 is opened in the comparator overturning output high level of vertiginous time and is provided the supplemental current switching tube of supplemental current N25, in the stage being basically unchanged, comparator overturning output low level, then N25 is turned off, to reduce the entire turn-off time, together Shi Zengjia Miller plateau time.

Figure 21 shows the effect of the supplemental current.As shown in figure 21, Rds_NMOS is within t6-t7 the and t8-t9 period There is faster resistance variations speed due to the provision of supplemental current, therefore compared to the t7-t8 period, reduce shutdown and prolong Late, simultaneously because the period appears at the time of VDS changes before t7 and after t8, therefore it will not influence EMI performance.

Figure 20 also shows the embodiment of dynamic current generation module 2002.In Figure 20, dynamic current generation module 2002 may include error amplifier EA and the current mirroring circuit that is made of PMOS tube P31, P32.The first of error amplifier EA Input terminal receives COMP voltage, and the second input terminal is coupled to its output end, and in addition output end passes through resistance R1 again and is grounded.According to accidentally The knowledge of poor amplifier EA is it is found that the voltage of the output end of error amplifier EA is equal to COMP voltage, thus in current mirror electricity The mirror image input terminal on road obtains the electric current of COMP/R1, the electric current via current mirroring circuit mirror image, from the mirror image of current mirroring circuit Output end, that is, P32 drain electrode output, to obtain IbiasD.

As previously mentioned, IbiasD is that be inversely proportional with circuit load really here, and load is heavier, and Ibias is smaller, example If the loop compensation voltage COMP of circuit here is just inversely proportional with load, therefore, as long as IbiasD is designed to and COMP electricity It is pressed into direct ratio.Generating IbiasD with COMP voltage is only an example, can also be according to any index for being able to reflect load IbiasD is generated, such as IbiasD electric current can be the image current of line loss electric current, it is also possible to it is the electric current proportional with VCC, It is also possible to and electric current that duty ratio of demagnetizing, turn-on time, period are proportional.Figure 22 shows dynamic current and load frequency is closed The schematic diagram of system.

The present invention still further provides a kind of driving method of dynamic regulation device for driving signal.The driving signal For driving the switch of MOS switch pipe.The dynamic regulation device includes: pull-up metal-oxide-semiconductor, and gate terminal is received for controlling its conducting Or the pull-up of shutdown controls signal, one end in source terminal and drain electrode end is coupled to power voltage terminal, and the other end is coupled to the MOS The gate terminal of switching tube；And drop-down metal-oxide-semiconductor, gate terminal receive the drop-down for controlling its on or off and control signal, source One end in extreme and drain electrode end is coupled to circuit ground terminal, and the other end is coupled to the gate terminal of the MOS switch pipe.

The driving method be included in the drop-down metal-oxide-semiconductor by the drop-down control signal open when, to the grid of the drop-down metal-oxide-semiconductor End provides controlled voltage so that the gate source voltage of the drop-down metal-oxide-semiconductor rises to supply voltage with the adjustable speed of dynamic, thus with can The driving capability of change drives the shutdown of the MOS switch pipe.

When loading condition is heavier, the controlled voltage variation provided to the gate terminal of the drop-down metal-oxide-semiconductor is more slow, under slowing down Draw the gate source voltage of metal-oxide-semiconductor to rise to the speed of supply voltage, to reduce driving capability, and when loading condition is lighter, to this under The controlled voltage variation for drawing the gate terminal of metal-oxide-semiconductor to provide is faster, rises to power supply electricity to accelerate the gate source voltage of the drop-down metal-oxide-semiconductor The speed of pressure, to improve driving capability.

Drop-down charge and discharge capacitance is equipped between the gate terminal and source terminal of the drop-down metal-oxide-semiconductor, it can be based on the MOS switch pipe Loading condition is dynamically generated the charging and discharging currents of size variation, with the drop-down metal-oxide-semiconductor open when, by the drop-down charge and discharge The charge and discharge of capacitor provide controlled voltage to the grid of the drop-down metal-oxide-semiconductor.

Smaller charging and discharging currents are generated, under heavier loading condition to slow down the gate source voltage liter of the drop-down metal-oxide-semiconductor To the speed of supply voltage, and bigger charging and discharging currents are generated under lighter loading condition, to accelerate drop-down metal-oxide-semiconductor Gate source voltage rises to the speed of supply voltage.

This method further include in the opening process of the drop-down metal-oxide-semiconductor when the MOS switch pipe grid voltage variation when to The gate terminal of the drop-down metal-oxide-semiconductor provides supplemental current, to accelerate the variation of the gate source voltage of the drop-down metal-oxide-semiconductor.

This method further includes when the pull-up metal-oxide-semiconductor controls signal by the pull-up and opens, to the gate terminal of the pull-up metal-oxide-semiconductor Controlled voltage is provided so that the gate source voltage of the pull-up metal-oxide-semiconductor rises to supply voltage with the adjustable speed of dynamic, thus with variable Driving capability drive the unlatching of the MOS switch pipe.

When loading condition is heavier, the controlled voltage variation provided to the gate terminal of the pull-up metal-oxide-semiconductor is more slow, on slowing down The gate source voltage of metal-oxide-semiconductor is drawn to rise to the speed of supply voltage, to reduce driving capability, and when loading condition is lighter, on this The controlled voltage variation for drawing the gate terminal of metal-oxide-semiconductor to provide is faster, rises to power supply electricity to accelerate the gate source voltage of the pull-up metal-oxide-semiconductor The speed of pressure, to improve driving capability.

It is equipped with pull-up charge and discharge capacitance between the gate terminal and source terminal of the pull-up metal-oxide-semiconductor, the MOS switch pipe can be based on Loading condition be dynamically generated the charging and discharging currents of size variation, with when the pull-up metal-oxide-semiconductor is opened, by the pull-up The charge and discharge of charge and discharge capacitance provide controlled voltage to the grid of the pull-up metal-oxide-semiconductor.

Smaller charging and discharging currents are generated, under heavier loading condition to slow down the gate source voltage liter of the pull-up metal-oxide-semiconductor To the speed of supply voltage, and bigger charging and discharging currents are generated under lighter loading condition, to accelerate pull-up metal-oxide-semiconductor Gate source voltage rises to the speed of supply voltage.

Offer is to make any person skilled in the art all and can make or use this public affairs to the previous description of the disclosure It opens.The various modifications of the disclosure all will be apparent for a person skilled in the art, and as defined herein general Suitable principle can be applied to other variants without departing from the spirit or scope of the disclosure.The disclosure is not intended to be limited as a result, Due to example described herein and design, but should be awarded and principle disclosed herein and novel features phase one The widest scope of cause.

Claims

1. a kind of dynamic regulation device for driving signal, the driving signal is used to drive the switch of MOS switch pipe, described Dynamic regulation device includes:

Metal-oxide-semiconductor is pulled up, gate terminal receives the pull-up for controlling its on or off and controls signal, in source terminal and drain electrode end One end is coupled to power voltage terminal, and the other end is coupled to the gate terminal of the MOS switch pipe,

Metal-oxide-semiconductor is pulled down, gate terminal receives the drop-down for controlling its on or off and controls signal, in source terminal and drain electrode end One end is coupled to circuit ground terminal, and the other end is coupled to the gate terminal of the MOS switch pipe, and

Controlled voltage source module, in the drop-down metal-oxide-semiconductor when being opened by drop-down control signal, to the drop-down metal-oxide-semiconductor Gate terminal provide controlled voltage so that the gate source voltage of the drop-down metal-oxide-semiconductor rises to supply voltage with the adjustable speed of dynamic, To drive the shutdown of the MOS switch pipe with variable driving capability；

Wherein loading condition is heavier, then the controlled electricity that the controlled voltage source module is provided to the gate terminal of the drop-down metal-oxide-semiconductor Bucklingization is more slow, rises to the speed of supply voltage to slow down the gate source voltage of drop-down metal-oxide-semiconductor, to reduce driving capability, and bears Carrier strip part is lighter, and the controlled voltage variation that the controlled voltage source module is provided to the gate terminal of the drop-down metal-oxide-semiconductor is faster, with The gate source voltage for accelerating the drop-down metal-oxide-semiconductor rises to the speed of supply voltage, to improve driving capability.

2. dynamic regulation device as described in claim 1, which is characterized in that the controlled voltage source circuit includes:

Dynamic current generation module is dynamically generated the charge and discharge of size variation for the loading condition based on the MOS switch pipe Electric current, the output end of the dynamic current generation module is coupled to the gate terminal of the drop-down metal-oxide-semiconductor, in the drop-down When metal-oxide-semiconductor is opened, by the charge and discharge to the drop-down charge and discharge capacitance, controlled electricity is provided to the grid of the drop-down metal-oxide-semiconductor Pressure.

3. dynamic regulation device as claimed in claim 2, which is characterized in that the dynamic current generation module is born in heavier Smaller charging and discharging currents are generated under the conditions of load, to slow down the speed that the gate source voltage of the drop-down metal-oxide-semiconductor rises to supply voltage Degree, and bigger charging and discharging currents are generated under lighter loading condition, electricity is risen to accelerate the gate source voltage of drop-down metal-oxide-semiconductor The speed of source voltage.

4. dynamic regulation device as claimed in claim 2, which is characterized in that the gate terminal of the drop-down metal-oxide-semiconductor is moved with described Pull-down current switching tube is equipped between state electric current generation module to control the on-off of the charging and discharging currents, the pull-down current is opened The gate terminal for closing pipe is coupled to the drop-down control signal, to control the drop-down metal-oxide-semiconductor conducting in drop-down control signal When, make the pull-down current switching tube conducting to provide charging and discharging currents to the gate terminal of the drop-down metal-oxide-semiconductor.

5. dynamic regulation device as claimed in claim 4, which is characterized in that the controlled voltage source circuit further includes that drop-down is multiple Bit switch pipe, one end in the source terminal and drain electrode end of the drop-down reset switch pipe are coupled to the drop-down MOS switch pipe Gate terminal, the other end are coupled to power voltage terminal when the drop-down metal-oxide-semiconductor is PMOS tube and are NMOS in the drop-down metal-oxide-semiconductor Circuit ground terminal is coupled to when pipe, the drop-down reset switch pipe has the on or off opposite with the pull-down current switching tube State.

6. dynamic regulation device as claimed in claim 4, which is characterized in that the source terminal and leakage of the pull-down current switching tube One end in extreme is coupled to the output end of the dynamic current generation module, and the other end is coupled to the grid of the drop-down metal-oxide-semiconductor Extremely.

7. dynamic regulation device as claimed in claim 4, which is characterized in that the controlled voltage source circuit further includes drop-down electricity Current mirror circuit, the dynamic current generation module are coupled to the grid of the drop-down metal-oxide-semiconductor via the pull-down current mirror circuit End, the pull-down current switching tube are coupled to the pull-down current mirror circuit to control the on-off of the pull-down current mirror circuit.

8. dynamic regulation device as claimed in claim 7, which is characterized in that the pull-down current mirror circuit includes:

First current lens unit, the mirror image input terminal of first current lens unit couple the defeated of the dynamic current generation module Outlet；And

The mirror image input terminal of second current lens unit, second current lens unit is coupled to via the pull-down current switching tube The mirror output of the mirror output of first current lens unit, second current lens unit is coupled to the drop-down The gate terminal of metal-oxide-semiconductor.

9. dynamic regulation device as claimed in claim 2, which is characterized in that the controlled voltage source circuit further include:

Supplemental current generation module, for generating supplemental current；

The output end of supplemental current switching tube, the supplemental current generation module is coupled to institute via the supplemental current switching tube The gate terminal of drop-down metal-oxide-semiconductor is stated, the supplemental current switching tube is in the opening process of the drop-down metal-oxide-semiconductor when the MOS is opened It closes and is connected when the grid voltage variation of pipe to provide supplemental current to the gate terminal of the drop-down metal-oxide-semiconductor, to accelerate the drop-down The variation of the gate source voltage of metal-oxide-semiconductor.

10. dynamic regulation device as claimed in claim 9, which is characterized in that the supplemental current switching tube and the drop-down Metal-oxide-semiconductor is all NMOS tube, and the gate terminal of the supplemental current switching tube is coupled to the grid of the drop-down metal-oxide-semiconductor via phase inverter End, to control the on-off of the supplemental current switching tube.

11. dynamic regulation device as claimed in claim 9, which is characterized in that further include:

Turn off analysis circuit, input terminal are coupled to the gate terminal of the MOS switch pipe, to detect the grid of the MOS switch pipe Pole tension, output end are coupled to the gate terminal of the supplemental current switching tube, to change in the grid voltage of the MOS switch pipe Supplemental current switching tube described in Shi Kaiqi, and turn off the supplemental current when the grid voltage of the MOS switch pipe is constant and open Guan Guan.

12. dynamic regulation device as claimed in claim 11, which is characterized in that the turn off analysis circuit includes:

Comparator, the first input end of the comparator are coupled to the gate terminal of the MOS switch pipe, and the second input terminal is via electricity Resistance is coupled to the gate terminal of the MOS switch pipe simultaneously via capacity earth, and output end is coupled to the supplemental current switching tube Gate terminal.

13. dynamic regulation device as claimed in claim 9, which is characterized in that the supplemental current generation module includes:

Mirror image circuit, the charging and discharging currents mirror image for generating the dynamic current generation module to the drop-down MOS The gate terminal of pipe is to provide the supplemental current.

14. dynamic regulation device as described in claim 1, which is characterized in that the controlled voltage source module is in the pull-up Metal-oxide-semiconductor provides controlled voltage so that on described when being opened by pull-up control signal, to the gate terminal of the pull-up metal-oxide-semiconductor The gate source voltage of metal-oxide-semiconductor is drawn to rise to supply voltage with the adjustable speed of dynamic, thus with described in variable driving capability driving The unlatching of MOS switch pipe.

15. dynamic regulation device as claimed in claim 14, which is characterized in that loading condition is heavier, then the controlled voltage The controlled voltage variation that source module is provided to the gate terminal of the pull-up metal-oxide-semiconductor is more slow, to slow down the gate-source electricity of pull-up metal-oxide-semiconductor Pressure rises to the speed of supply voltage, to reduce driving capability, and loading condition is lighter, and the controlled voltage source module is to described The controlled voltage variation for pulling up the gate terminal offer of metal-oxide-semiconductor is faster, rises to electricity to accelerate the gate source voltage of the pull-up metal-oxide-semiconductor The speed of source voltage, to improve driving capability.

16. dynamic regulation device as claimed in claim 14, which is characterized in that the controlled voltage source circuit includes:

Dynamic current generation module is dynamically generated the charge and discharge of size variation for the loading condition based on the MOS switch pipe Electric current, the output end of the dynamic current generation module is coupled to the gate terminal of the pull-up metal-oxide-semiconductor, in the pull-up When metal-oxide-semiconductor is opened, by the charge and discharge to the pull-up charge and discharge capacitance, controlled electricity is provided to the grid of the pull-up metal-oxide-semiconductor Pressure.

17. dynamic regulation device as claimed in claim 16, which is characterized in that the dynamic current generation module is heavier Smaller charging and discharging currents are generated under loading condition, to slow down the speed that the gate source voltage of the pull-up metal-oxide-semiconductor rises to supply voltage Degree, and bigger charging and discharging currents are generated under lighter loading condition, electricity is risen to accelerate the gate source voltage of pull-up metal-oxide-semiconductor The speed of source voltage.

18. dynamic regulation device as claimed in claim 16, which is characterized in that it is described pull-up metal-oxide-semiconductor gate terminal with it is described Pull-up current switching tube is equipped between dynamic current generation module to control the on-off of the charging and discharging currents, the pull-up current The gate terminal of switching tube is coupled to the pull-up control signal, is led with controlling the pull-up metal-oxide-semiconductor in pull-up control signal When logical, make the pull-up current switching tube conducting to provide charging and discharging currents to the gate terminal of the pull-up metal-oxide-semiconductor.

19. dynamic regulation device as claimed in claim 18, which is characterized in that the controlled voltage source circuit further includes pull-up Reset switch pipe, it is described pull-up reset switch pipe source terminal and drain electrode end in one end be coupled to the pull-up MOS switch pipe Gate terminal, the other end is coupled to power voltage terminal when the pull-up metal-oxide-semiconductor is PMOS tube and is in the pull-up metal-oxide-semiconductor Be coupled to circuit ground terminal when NMOS tube, the pull-up reset switch pipe have the conducting opposite with the pull-up current switching tube or Off state.

20. dynamic regulation device as claimed in claim 18, which is characterized in that the source terminal of the pull-up current switching tube and One end in drain electrode end is coupled to the output end of the dynamic current generation module, and the other end is coupled to the pull-up metal-oxide-semiconductor Gate terminal.

21. dynamic regulation device as claimed in claim 18, which is characterized in that the controlled voltage source circuit further includes pull-up Current mirroring circuit, the dynamic current generation module are coupled to the grid of the pull-up metal-oxide-semiconductor via the pull-up current mirror circuit Extremely, the pull-up current switching tube is coupled to the pull-up current mirror circuit to control the logical of the pull-up current mirror circuit It is disconnected.

22. dynamic regulation device as claimed in claim 21, which is characterized in that the pull-up current mirror circuit includes:

Third current lens unit, the mirror image input terminal of the third current lens unit couple the defeated of the dynamic current generation module Outlet；And

The mirror image input terminal of 4th current lens unit, the 4th current lens unit is coupled to via the pull-up current switching tube The mirror output of the mirror output of the third current lens unit, the 4th current lens unit is coupled to the pull-up The gate terminal of metal-oxide-semiconductor.

23. the dynamic regulation device as described in claim 2 or 16, which is characterized in that the dynamic current generation module includes:

Error amplifier, one input end receive COMP voltage, and another input terminal is coupled to its output end, and output end passes through resistance Ground connection, wherein the COMP voltage is inversely proportional with load weight condition；And

Current mirroring circuit, the output end of the error amplifier are coupled to the input terminal of the current mirroring circuit with from the electric current Mirror circuit exports the charging and discharging currents.

24. a kind of drive system, comprising:

MOS switch pipe；

The dynamic regulation device for driving signal as described in any one of claim 1-23；And

Driving circuit, for generating the pull-up control signal and drop-down control signal.

25. a kind of driving method of the dynamic regulation device for driving signal, the driving signal is for driving MOS switch pipe Switch, the dynamic regulation device includes: pull-up metal-oxide-semiconductor, and gate terminal receives the pull-up control for controlling its on or off Signal processed, one end in source terminal and drain electrode end are coupled to power voltage terminal, and the other end is coupled to the grid of the MOS switch pipe End；And drop-down metal-oxide-semiconductor, gate terminal receive the drop-down for controlling its on or off and control signal, source terminal and drain electrode end In one end be coupled to circuit ground terminal, the other end is coupled to the gate terminal of the MOS switch pipe,

The driving method includes:

When the drop-down metal-oxide-semiconductor is opened by drop-down control signal, controlled electricity is provided to the gate terminal of the drop-down metal-oxide-semiconductor It presses so that the gate source voltage of the drop-down metal-oxide-semiconductor rises to supply voltage with the adjustable speed of dynamic, thus with variable driving energy The shutdown of MOS switch pipe described in power drive；

When loading condition is heavier, the controlled voltage variation provided to the gate terminal of the drop-down metal-oxide-semiconductor is more slow, to slow down drop-down The gate source voltage of metal-oxide-semiconductor rises to the speed of supply voltage, to reduce driving capability, and when loading condition is lighter, under described The controlled voltage variation for drawing the gate terminal of metal-oxide-semiconductor to provide is faster, rises to power supply to accelerate the gate source voltage of the drop-down metal-oxide-semiconductor The speed of voltage, to improve driving capability.

26. driving method as claimed in claim 25, which is characterized in that it is described drop-down metal-oxide-semiconductor gate terminal and source terminal it Between be equipped with drop-down charge and discharge capacitance, wherein it is described to it is described drop-down metal-oxide-semiconductor gate terminal provide controlled voltage include:

Loading condition based on the MOS switch pipe is dynamically generated the charging and discharging currents of size variation, in the drop-down MOS When pipe is opened, by the charge and discharge to the drop-down charge and discharge capacitance, controlled voltage is provided to the grid of the drop-down metal-oxide-semiconductor.

27. driving method as claimed in claim 26, which is characterized in that generate smaller charge and discharge under heavier loading condition Electric current, to slow down the speed that the gate source voltage of the drop-down metal-oxide-semiconductor rises to supply voltage, and under lighter loading condition Bigger charging and discharging currents are generated, to accelerate the speed that the gate source voltage of drop-down metal-oxide-semiconductor rises to supply voltage.

28. driving method as claimed in claim 26, which is characterized in that further include:

When the variation of the grid voltage of the MOS switch pipe to the drop-down metal-oxide-semiconductor in the opening process of the drop-down metal-oxide-semiconductor Gate terminal provide supplemental current, with accelerate it is described drop-down metal-oxide-semiconductor gate source voltage variation.

29. driving method as claimed in claim 25, which is characterized in that further include:

When the pull-up metal-oxide-semiconductor is opened by pull-up control signal, controlled electricity is provided to the gate terminal of the pull-up metal-oxide-semiconductor It presses so that the gate source voltage of the pull-up metal-oxide-semiconductor rises to supply voltage with the adjustable speed of dynamic, thus with variable driving energy The unlatching of MOS switch pipe described in power drive.

30. driving method as claimed in claim 29, which is characterized in that when loading condition is heavier, to the pull-up metal-oxide-semiconductor The controlled voltage variation that provides of gate terminal it is more slow, rise to the speed of supply voltage to slow down the gate source voltage of pull-up metal-oxide-semiconductor, To reducing driving capability, and when loading condition is lighter, the controlled voltage variation provided to the gate terminal of the pull-up metal-oxide-semiconductor is got over Fastly, the speed of supply voltage is risen to the gate source voltage for accelerating the pull-up metal-oxide-semiconductor, to improve driving capability.

31. driving method as claimed in claim 29, which is characterized in that in the gate terminal and source terminal of the pull-up metal-oxide-semiconductor Between be equipped with pull-up charge and discharge capacitance, wherein it is described to it is described pull-up metal-oxide-semiconductor gate terminal provide controlled voltage include:

Loading condition based on the MOS switch pipe is dynamically generated the charging and discharging currents of size variation, in the pull-up When metal-oxide-semiconductor is opened, by the charge and discharge to the pull-up charge and discharge capacitance, controlled electricity is provided to the grid of the pull-up metal-oxide-semiconductor Pressure.

32. driving method as claimed in claim 31, which is characterized in that generate smaller charge and discharge under heavier loading condition Electric current, to slow down the speed that the gate source voltage of the pull-up metal-oxide-semiconductor rises to supply voltage, and under lighter loading condition Bigger charging and discharging currents are generated, to accelerate the speed that the gate source voltage of pull-up metal-oxide-semiconductor rises to supply voltage.