CN109213253A - A kind of quick High Precision Low Temperature drift strong pull-down current generating circuit - Google Patents
A kind of quick High Precision Low Temperature drift strong pull-down current generating circuit Download PDFInfo
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- CN109213253A CN109213253A CN201811141487.XA CN201811141487A CN109213253A CN 109213253 A CN109213253 A CN 109213253A CN 201811141487 A CN201811141487 A CN 201811141487A CN 109213253 A CN109213253 A CN 109213253A
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
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Abstract
The invention discloses a kind of quick High Precision Low Temperatures applied in motor driving chip to float strong pull-down current generating circuit, includes: BGR module, current controlled voltage generation module, mirror image bias voltage module, pull-down current generation module, shutdown pull-down current module；BGR module generates the bias current Iin of High Precision Low Temperature drift；Current controlled voltage generation module generates corresponding bias voltage VB1 and VB2 according to the size of the bias current Iin；Mirror image bias voltage module is mirror image and follows VB2 voltage, exports bias voltage VB3 to generate；Pull-down current generation module is that drop-down driving current is generated according to bias voltage VB3；It, will output pull-down current shutdown when shutdown pull-down current module is by clock signal clk input high level.This structure by current mirror can the advantage of good mirror image low-temperature coefficient high-precision current be applied in the strong pull-down current design of motor driving chip, in addition to meet the requirement of quick response, and combine the advantage of switching tube quick response.
Description
Technical field
The present invention relates to a kind of quick High Precision Low Temperature drift strong pull-down electric currents applied in motor driving chip to generate
Circuit belongs to Analogous Integrated Electronic Circuits technical field.
Background technique
In traditional motor driving chip, general small current driving route can be used current mirror and generate to obtain high-precision
The drop-down driving current of Low Drift Temperature.When driving current is gradually increased, its parasitic capacitance can be caused to increase due to the increase of driving tube
Greatly, so influence driver circuit response speed.Therefore, when drop-down driving current reaches the strong driving of hundred milliamperes of magnitudes, it is
The requirement for meeting the response time, generally takes switching tube driving method to obtain the strong pull-down electric current of quick response, so
The performance of driving pull-down current is sacrificed, so that driving pull-down current is very big with technique and temperature change, cannot be generated high-precision
The strong pull-down electric current for spending Low Drift Temperature, is unable to satisfy high performance strong pull-down electric current application requirement.
Summary of the invention
The object of the present invention is to provide a kind of quick High Precision Low Temperature drift strong pull-down electric currents to generate route, guarantees pulling down
Electric current is by milliampere magnitude to hundred milliamperes of magnitudes using the lower high-precision high-performance of the low-temperature coefficient that can generate quick response
Pull-down current.
In order to reach the goals above, the invention is realized by the following technical scheme:
A kind of quick High Precision Low Temperature drift strong pull-down current generating circuit, include: BGR module, current controlled voltage generate mould
Block, mirror image bias voltage module, pull-down current generation module, shutdown pull-down current module；
The BGR module generates the bias current Iin of High Precision Low Temperature drift；
The current controlled voltage generation module generates corresponding bias voltage VB1 according to the size of the bias current Iin
And VB2；
The mirror image bias voltage module is mirror image and follows VB2 voltage, exports bias voltage VB3 to generate；
The pull-down current generation module is that drop-down driving current is generated according to bias voltage VB3；
When the shutdown pull-down current module is by clock signal clk input high level, by output pull-down current shutdown.
Preferably, the BGR module link block work positive supply VDD and module work negative supply VSS；
When CLK input signal becomes low level by high level, BGR module input current increases from zero to Iin.
Preferably, the current controlled voltage generation module includes NMOS tube NM1, NMOS tube NM3, PMOS tube PM1 and electricity
Hinder R1；
The source electrode link block work positive supply VDD of the PM1, grid connect clock signal clk, and drain electrode connects the NM3's
Drain electrode；
The source electrode of the NM3 is connect with the first end of the R1, and grid connects the drain electrode of NMOS tube NM1；
Draining for the NM1 inputs the electric current Iin of BGR module, source electrode link block work negative supply VSS, described in grid connection
The first end of R1；
The second end of the R1 is connect with module work negative supply VSS, and the voltage drop on R1 is VB2-VSS at this time.
Preferably, the mirror image bias voltage module includes NMOS tube NM4, PMOS tube PM2 and resistance R2；
The source electrode of the PM2 is connect with module work positive supply VDD, and grid connects clock signal clk, and drain electrode connects the NM4
Drain electrode；
The NM4 source electrode is connect with the first end of the R2, and grid connects the drain electrode of NMOS tube NM1；
The second end of the R2 is connect with module work negative supply VSS, and the voltage drop on R2 is VB3-VSS at this time.
Preferably, the pull-down current generation module includes NMOS tube NM2, and source electrode and module work negative supply VSS connect
It connects, grid is connect with the source electrode of the NM4, and drain electrode is connected with external loading；
Pull-down current size caused by the pull-down current generation module is by input current Iin and NMOS tube NM2 and NM1
Breadth length ratio ratio codetermines.
Preferably, the shutdown pull-down current module includes NMOS tube NM5, and source electrode and module work negative supply VSS connect
It connects, grid is connect with clock signal clk, and drain electrode is connect with the grid of the NM2.
Preferably, when clock signal clk voltage is in high level, the output voltage of the BGR module is low level, electric current
Control voltage generating module, the component of mirror image bias voltage module is at off state；
When the end CLK, input signal becomes low level by high level, the output electric current of the BGR module increases from zero to Iin,
Output voltage VB1 is also quickly drawn high therewith；At this time due to resistance R1 and R2 link block work negative supply VSS, so VB2 and
VB3 voltage is in low level state, therefore the pull-up of pull-up circuit composed by PM1 and PM2 and NM3 and NM4 is very capable, can
VB2 and VB3 node voltage quickly to be drawn high；
With the raising of VB2 and VB3 voltage, the pull-up reduced capability of NM3 and NM4, and the pull-down capability of NM1 and NM2 gradually increases
By force, the rate of climb for VB1 node voltage gradually being pulled down, and VB2 and VB3 node voltage being weakened.
Preferably, it is up to when the output voltage VB1 of BGR module differs the threshold voltage of a NMOS tube NM3 with VB2
Steady-working state.
A kind of quick High Precision Low Temperature as described in claim 6 floats strong pull-down current generating circuit, and feature exists
In when input CLK level becomes high level by low level, the output electric current of BGR module is reduced to zero by Iin；At this time PM1 and
PM2 shutdown, NM5 are opened, and VB3 is pulled to VSS by NM5, to turn off NM2.
Structure of the invention by current mirror can good mirror image low-temperature coefficient high-precision current advantage be applied to motor driving
In the strong pull-down current design of chip, in addition to meet the requirement of quick response, and the advantage of switching tube quick response is combined,
The two advantage is merged to obtain quick High Precision Low Temperature drift strong pull-down electric current.
Detailed description of the invention
Fig. 1 is circuit structure schematic diagram of the invention；
Fig. 2 is circuit main node voltage and current of the present invention and the end CLK waveform diagram.
Specific embodiment
In order to be easy to understand the technical means, the creative features, the aims and the efficiencies achieved by the present invention, tie below
Closing the drawings and specific embodiments, the present invention will be further described in detail, the range of but do not limit the invention in any way.
Fig. 1 show line construction of the invention, includes: the biasing of BGR(band-gap reference) module, current controlled voltage generation
Module, mirror image bias voltage module, pull-down current generation module, shutdown pull-down current module；
BGR module is the current source of a low temp rising high precision, including BGR route, each link block work positive supply in both ends
VDD and module work negative supply VSS, the main function of the module are the bias current Iin for generating High Precision Low Temperature drift；Work as CLK
When input signal becomes low level by high level, BGR module input current increases from zero to Iin.
Current controlled voltage generation module includes NMOS tube NM1, NMOS tube NM3, PMOS tube PM1 and resistance R1；The source of PM1
Pole link block work positive supply VDD, grid connect clock signal clk, and drain electrode connects the drain electrode of the NM3；The source electrode of NM3 with
The first end of the R1 connects, and grid connects the drain electrode of NMOS tube NM1；The bias current Iin of the drain electrode input BGR module of NM1,
Source electrode link block work negative supply VSS, grid connect the first end of the R1；Second end and module the work negative supply of R1
VSS connection, the voltage drop on R1 is VB2-VSS at this time；The module main function is according to the size of bias current Iin come quickly
Generate corresponding bias voltage VB1 and VB2.
Mirror image bias voltage module includes NMOS tube NM4, PMOS tube PM2 and resistance R2；The source electrode and module of PM2 works just
Power vd D connection, grid connect clock signal clk, and drain electrode connects the drain electrode of the NM4；The first end of NM4 source electrode and the R2
Connection, grid are connect with the drain electrode of the NM1；The second end of R2 is connect with module work negative supply VSS, at this time the voltage on R2
Drop is VB3-VSS；The main function of the module is quick mirror image and follows VB2 voltage, exports bias voltage VB3 to generate.
Pull-down current generation module includes NMOS tube NM2, and source electrode is connect with module work negative supply VSS, grid and institute
The source electrode connection of NM4 is stated, drain electrode is connect with external loading；The module main function is to generate high-performance according to bias voltage VB3
Driving current is pulled down, which is codetermined by the breadth length ratio ratio of input current Iin and NMOS tube NM2 and NM1.
Shutdown pull-down current module includes NMOS tube NM5, and source electrode and module the negative supply VSS that works are connect, grid and when
The CLK connection of clock signal, drain electrode are connect with the grid of the NM2；The module main function is quick when the end CLK input high level
Will output pull-down current shutdown.
Wherein, can be changed ideal current source Iin and Iout is signal icon, respectively indicates the generation of chip interior BGR module
The pull-down current flowed through on the current offset and external loading of High Precision Low Temperature drift.
Fig. 2 show main node voltage and current waveform and CLK input relation schematic diagram on route shown in Fig. 1.When
When the end CLK input signal becomes low level by high level, input current increases from zero to Iin, and VB1 voltage is firstly inputted partially
Current source is set to draw high, VB2 and VB3 voltage also maintains low state since the drop-down of resistance R1 and R2 act at this time, so by
The pull-up of pull-up circuit composed by PMOS switch pipe PM1 and PM2 and NMOS tube NM3 and NM4 is very capable, can quickly by
VB2 and VB3 node voltage is drawn high, and with the raising of VB2 and VB3 voltage, the pull-up reduced capability of NMOS tube NM3 and NM4, and
The pull-down capability of NMOS tube NM1 and NM2 gradually increase, and VB1 node voltage is gradually pulled down, and weaken VB2 and VB3 node voltage
The rate of climb.So reach steady-working state when VB1 differs the threshold voltage of a NMOS tube NM3 with VB2, at this time NM3
It is source level follower with NM4, branch working direct current is respectively (VB2-VSS)/R1 and (VB3-VSS)/R2.In this way, even if
When application system requires strong pull-down electric current, efferent duct NM2 breadth length ratio size increases, its grid end parasitic capacitance is caused to increase, and utilizes
This structure can also realize fast pull-up VB3 voltage, to realize the quick generation of strong pull-down electric current.On the other hand, due to electric current
The duplication of control voltage generating module and mirror image bias voltage module acted on to realize high-performance current, it is ensured that VB3 node
Voltage mirror VB2 node voltage on the basis of keeping good consistency and can effectively reduce output disturbance to bias voltage
The interference of VB2, so that the output good performance for following input current of pull-down current can be realized.When chip interior BGR is generated
When the high-precision input current Iin of low-temperature coefficient, the equivalent mirror image input current Iin of pull-down current Iout is exported, therefore can be with
Overcome the influence of technique and temperature, generates the high-precision output strong pull-down electric current of low-temperature coefficient.When input CLK level is by low
When level becomes high level, input current is reduced to zero by Iin, and switching tube PM1 and PM2 shutdown, NM5 are opened, and VB3 is fast by NM5
Speed is pulled to VSS, to quickly turn off NMOS tube NM2, realizes rapidly switching off for output strong pull-down electric current.In this way, realizing
The generation of quick High Precision Low Temperature drift strong pull-down current circuit.
It is discussed in detail although the contents of the present invention have passed through above-mentioned preferred embodiment, but it should be appreciated that above-mentioned retouches
It states and is not considered as limitation of the invention.After those skilled in the art have read above content, for of the invention a variety of
Modifications and substitutions all will be apparent.Therefore, protection scope of the present invention should be by the attached claims.
Claims (9)
1. a kind of quick High Precision Low Temperature drift strong pull-down current generating circuit is, characterized by comprising: BGR module, electric current control
Voltage generating module processed, mirror image bias voltage module, pull-down current generation module, shutdown pull-down current module；
The BGR module generates the bias current Iin of High Precision Low Temperature drift；
The current controlled voltage generation module generates corresponding bias voltage VB1 according to the size of the bias current Iin
And VB2；
The mirror image bias voltage module is mirror image and follows VB2 voltage, exports bias voltage VB3 to generate；
The pull-down current generation module is that drop-down driving current is generated according to bias voltage VB3；
When the shutdown pull-down current module is by clock signal clk input high level, by output pull-down current shutdown.
2. a kind of quick High Precision Low Temperature as described in claim 1 floats strong pull-down current generating circuit, which is characterized in that
The BGR module link block work positive supply VDD and module work negative supply VSS；
When CLK input signal becomes low level by high level, BGR module input current increases from zero to Iin.
3. a kind of quick High Precision Low Temperature as described in claim 2 floats strong pull-down current generating circuit, which is characterized in that
The current controlled voltage generation module includes NMOS tube NM1, NMOS tube NM3, PMOS tube PM1 and resistance R1；
The source electrode link block work positive supply VDD of the PM1, grid connect clock signal clk, and drain electrode connects the NM3's
Drain electrode；
The source electrode of the NM3 is connect with the first end of the R1, and grid connects the drain electrode of NM1；
Draining for the NM1 inputs the electric current Iin of BGR module, source electrode link block work negative supply VSS, described in grid connection
The first end of R1；
The second end of the R1 is connect with module work negative supply VSS, and the voltage drop on R1 is VB2-VSS at this time.
4. a kind of quick High Precision Low Temperature as described in claim 3 floats strong pull-down current generating circuit, which is characterized in that
The mirror image bias voltage module includes NMOS tube NM4, PMOS tube PM2 and resistance R2；
The source electrode of the PM2 is connect with module work positive supply VDD, and grid connects clock signal clk, and drain electrode connects the NM4
Drain electrode；
The NM4 source electrode is connect with the first end of the R2, and grid connects the drain electrode of NM1；
The second end of the R2 is connect with module work negative supply VSS, and the voltage drop on R2 is VB3-VSS at this time.
5. a kind of quick High Precision Low Temperature as described in claim 4 floats strong pull-down current generating circuit, which is characterized in that
The pull-down current generation module includes NMOS tube NM2, and source electrode is connect with module work negative supply VSS, grid and the NM4
Source electrode connection, drain electrode connect with external loading；
Pull-down current size caused by the pull-down current generation module is by input current Iin and NMOS tube NM2 and NM1
Breadth length ratio ratio codetermines.
6. a kind of quick High Precision Low Temperature as described in claim 5 floats strong pull-down current generating circuit, which is characterized in that
The shutdown pull-down current module includes NMOS tube NM5, and source electrode is connect with module work negative supply VSS, and grid and clock are believed
Number CLK connection, drain electrode are connect with the grid of the NM2.
7. a kind of quick High Precision Low Temperature as described in claim 6 floats strong pull-down current generating circuit, which is characterized in that
When clock signal clk voltage is in high level, the output voltage of the BGR module is low level, and current controlled voltage generates mould
Block, mirror image bias voltage module component be at off state；
When the end CLK, input signal becomes low level by high level, the output electric current of the BGR module increases from zero to Iin,
Output voltage VB1 is also quickly drawn high therewith；At this time due to resistance R1 and R2 link block work negative supply VSS, VB2 and VB3 electricity
Pressure is in low level state, therefore the pull-up of pull-up circuit composed by PM1 and PM2 and NM3 and NM4 is very capable, by VB2 and
VB3 node voltage is quickly drawn high；
With the raising of VB2 and VB3 voltage, the pull-up reduced capability of NM3 and NM4, and the pull-down capability of NM1 and NM2 gradually increases
By force, VB1 node voltage is gradually pulled down, and weakens the rate of climb of VB2 and VB3 node voltage.
8. a kind of quick High Precision Low Temperature as described in claim 6 floats strong pull-down current generating circuit, which is characterized in that
Steady-working state is up to when NMOS tube NM1 drain voltage VB1 differs the threshold voltage of a NMOS tube NM3 with VB2.
9. a kind of quick High Precision Low Temperature as described in claim 6 floats strong pull-down current generating circuit, which is characterized in that
When input CLK level becomes high level by low level, the output electric current of BGR module is reduced to zero by Iin；PM1 at the same time
It is turned off with PM2, NM5 is opened, and VB3 is pulled to VSS by NM5, to turn off NM2.
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| CN201811141487.XA CN109213253B (en) | 2018-09-28 | 2018-09-28 | Quick high-precision low-temperature-drift strong pull-down current generation circuit |
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| CN201811141487.XA CN109213253B (en) | 2018-09-28 | 2018-09-28 | Quick high-precision low-temperature-drift strong pull-down current generation circuit |
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| CN109213253B CN109213253B (en) | 2020-10-30 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112540639A (en) * | 2019-09-23 | 2021-03-23 | 天钰科技股份有限公司 | Operational amplifier circuit and display device having the same |
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| CN109213253B (en) | 2020-10-30 |
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