CN103338011A - Low temperature drift trimming circuit for trimming offset voltage of amplifier - Google Patents
Low temperature drift trimming circuit for trimming offset voltage of amplifier Download PDFInfo
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- CN103338011A CN103338011A CN2013102384891A CN201310238489A CN103338011A CN 103338011 A CN103338011 A CN 103338011A CN 2013102384891 A CN2013102384891 A CN 2013102384891A CN 201310238489 A CN201310238489 A CN 201310238489A CN 103338011 A CN103338011 A CN 103338011A
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Abstract
A low temperature drift trimming circuit for trimming the offset voltage of an amplifier comprises an input transistor pair connected through a circuit, a current intensity decision circuit and a trimming current generation circuit, wherein the current intensity decision circuit comprises a plurality of current mirrors connected through a circuit, a comparator C201, a phase inverter C202, a first resistor R201 and a second resistor R202; the trimming current generation circuit comprises a plurality of current mirrors connected through a circuit, a first switch K20 and a second switch K21. The low temperature floating trimming circuit for trimming the offset voltage of the amplifier can generate a trimming current related to the temperature coefficient and the offset voltage, reduces the temperature drift of the offset voltage of the amplifier, shortens the trimming time and lowers the cost.
Description
Technical field
The present invention relates to the amplifier Amplifier Design field in the semiconductor, relate in particular to a kind of low temperature of repairing accent for the amplifier offset voltage and float and repair demodulation circuit.
Background technology
The amplifier amplifier is widely used in the consumer electronics device, and communication equipment is in industrial control system and the medical device.Ideally, if the input voltage of two inputs of amplifier is the same, the output of amplifier should be zero potential, but in reality, amplifier also has the non-zero output voltage under the situation of this input, this non-zero output voltage equivalence just is called as the offset voltage of amplifier to input.
The generation of amplifier offset voltage is actually and is caused by not matching between the employed input transistors of amplifier, these do not match may system or appearance at random, but not matching in the system can be avoided or reduce by design, and can estimate, therefore not matching in the system is not the main source of amplifier voltage imbalance, though not matching at random also can reduce by design, but in practice, because the uncertainty of each procedure in the manufacturing process, all there be limited not matching in the identical device of nominal, and this not matching is not only at random, on same chip along with variation of temperature also has different variations.
Voltage imbalance for step-down amplifier, usually use the demodulation circuit of repairing as shown in Figure 1, repairing in the demodulation circuit of present prior art, input transistors is P type field effect transistor M110 and M111, their source electrode input current I10, their grid is respectively anode inp and the negative terminal inm of operational amplifier, M101 and M102, M103, M104, M105 forms the constant current source of convergent-divergent to scale, signal b1, b2, b3, b4 is control switch pipe M106 respectively, M107, M108, M109, allow to select the electric current of required proportional zoom to repair the offset voltage of transferring amplifier, these current sources are typical binary weightings, one has 16 available conditions of flirting of repairing, and required electric current is by M114 and this current mirror of M115 and according to selecting signal b0 control switch pipe M112 or selecting signal bb0 control switch pipe M113 to be input to anode or the negative terminal of amplifier.Flow into input transistors M110 or M111 by force by the electric current that do not match of repairing the demodulation circuit generation, this electric current that do not match will be offset the characteristic that do not match of input transistors self, make the offset voltage of amplifier amplifier reduce, yet, in this circuit, repair the accent electric current I
TirmBe generally a fixed current, the amplifier amplifier is through repairing after the accent, required repairing transfers electric current just to be fixed, can't change along with the variations in temperature of environment, but, owing to not matching between input transistors M110 and the M111 is that variations in temperature along with environment changes, therefore in theory in order to reduce offset voltage, needed repairing transfers electric current also should change along with the variation of ambient temperature, thus prior art repair the temperature drift that demodulation circuit can not reduce the amplifier offset voltage.
Summary of the invention
The invention provides a kind of low temperature of repairing accent for the amplifier offset voltage and float and repair demodulation circuit, generation is relevant with temperature coefficient and offset voltage repaiies the accent electric current, has reduced the temperature drift of amplifier offset voltage.
In order to achieve the above object, the invention provides a kind of low temperature of repairing accent for the amplifier offset voltage and float and repair demodulation circuit, this low temperature floats to be repaiied demodulation circuit and comprises input transistors that circuit connects to, size of current decision circuit and repair the accent current generating circuit;
Input transistors is to comprising the tenth transistor M210 and the 11 transistor M211, and the source electrode of the tenth transistor M210 and the 11 transistor M211 is connected current source I20, and the grid of the tenth transistor M210 and the 11 transistor M211 is connected v20;
Described size of current decision circuit comprises some current mirrors, comparator C 201, the inverter C202 that circuit connects, and first resistance R 201 and second resistance R 202;
First group of current mirror comprises the first transistor M201 and transistor seconds M202, second group of current mirror comprises the 3rd transistor M203 and the 4th transistor M204, the 3rd group of current mirror comprises the 4th transistor M204 and the 5th transistor M205, the 4th group of current mirror comprises the 9th transistor M209 and the tenth two-transistor M212, the 5th group of current mirror comprises the 13 transistor M213 and the 14 transistor M214, and the 6th group of current mirror comprises the 8th transistor M208 and the 13 transistor M213;
Described repairing transfers current generating circuit to comprise some current mirrors and first K switch 20 and second switch K21 that circuit connects;
The 7th group of current mirror comprises the 6th transistor M206 and the 7th transistor M207, and the 8th group of current mirror comprises the 15 transistor M215 and the 16 transistor M216, and the 9th group of current mirror comprises the 17 transistor M217 and the 18 transistor M218.
Described the tenth transistor M210 and the 11 transistor M211 are biased in the supply voltage of half.
The drain electrode of the tenth transistor M210 connects source electrode and the grid of the tenth two-transistor M212, the grid that also connects the 9th transistor M209, the drain electrode of the 11 transistor M211 connects source electrode and the grid of the 13 transistorized M213, the grid that also connects the 14 transistor M214 also connects the grid of the 8th transistor M208; The drain electrode of the 5th transistor M205 connects the source electrode of the 14 transistor M214, also connects grid and the drain electrode of the 4th transistor M204, also connects the grid of the 3rd transistor M203, also connects the source electrode of the 9th transistor M209; The drain electrode of the 3rd transistor M203 connects the negative input of second resistance R 202 and comparator C 202; The grid of the first transistor M201 connects the grid of transistor seconds M202 and the drain electrode of the first transistor M201, and the drain electrode of the first transistor M201 connects the source electrode of the 8th transistor M208; The drain electrode of transistor seconds M202 connects the electrode input end of the first transistor R201 and comparator C 201; The output of comparator C 201 connects the input of inverter C202; The output output signal b0 of comparator C 201, the output output signal bb0 of inverter C202.
The source electrode of the 16 transistor M216 and the 17 transistor M217 is connected repaiies the accent electric current I
TirmThe grid of the 16 transistor M216 connects grid and the source electrode of the 15 transistor M215, the grid of the 17 transistor M217 connects grid and the source electrode of the 18 transistor M218, connect the drain electrode of the 5th transistor M205 behind the source series second switch K21 of the 15 transistor M215, the source electrode of the 18 transistor M218 connects the drain electrode of the 7th transistor M207, the grid of the 7th transistor M207 connects grid and the drain electrode of the 6th transistor M206, the drain electrode of the 6th transistor M206 first K switch 20 back of connecting connects the source electrode of the 14 transistor M214, the break-make of first K switch 20 is controlled by signal b0, and the break-make of second switch K21 is controlled by signal bb0.
The present invention has reduced the temperature drift of amplifier offset voltage, has reduced the adjusting time, has reduced cost.
Description of drawings
Fig. 1 is the circuit diagram of repairing demodulation circuit in the background technology.
Fig. 2 is that the low temperature of repairing accent for the amplifier offset voltage provided by the invention floats the circuit diagram of repairing demodulation circuit.
Embodiment
Followingly specify preferred embodiment of the present invention according to Fig. 2.
As shown in Figure 2, the invention provides a kind of low temperature of repairing accent for the amplifier offset voltage and float and repair demodulation circuit, this circuit comprises input transistors that circuit connects to, size of current decision circuit and repaiies the accent current generating circuit.
Input transistors is to comprising the tenth transistor M210 and the 11 transistor M211, and the grid that the source electrode of the tenth transistor M210 and the 11 transistor M211 is connected electric current I 20, the ten transistor M210 and the 11 transistor M211 is connected bias voltage v20.
The grid of described the tenth transistor M210 and the 11 transistor M211 is biased on the fixing voltage, is generally the supply voltage of half.
The present invention transfers electric current I trim for the circuit among Fig. 1 provides to repair, as shown in Figure 2, source current I20 in the circuit of the present invention becomes certain ratio with source current I10 among Fig. 1, transistor M210, M211 in the circuit of the present invention also becomes same ratio with transistor M110, M111 among Fig. 1, and in domain, four transistors are close together, and they have close substantially mismatch properties and temperature characterisitic like this.
Described size of current decision circuit comprises some current mirrors, comparator C 201, the inverter C202 that circuit connects, and first resistance R 201 and second resistance R 202.
First group of current mirror comprises the first transistor M201 and transistor seconds M202, second group of current mirror comprises the 3rd transistor M203 and the 4th transistor M204, the 3rd group of current mirror comprises the 4th transistor M204 and the 5th transistor M205, the 4th group of current mirror comprises the 9th transistor M209 and the tenth two-transistor M212, the 5th group of current mirror comprises the 13 transistor M213 and the 14 transistor M214, and the 6th group of current mirror comprises the 8th transistor M208 and the 13 transistor M213.
The drain electrode of the tenth transistor M210 connects source electrode and the grid of the tenth two-transistor M212, the grid that also connects the 9th transistor M209, the drain electrode of the 11 transistor M211 connects source electrode and the grid of the 13 transistorized M213, the grid that also connects the 14 transistor M214 also connects the grid of the 8th transistor M208; The drain electrode of the 5th transistor M205 connects the source electrode of the 14 transistor M214, also connects grid and the drain electrode of the 4th transistor M204, also connects the grid of the 3rd transistor M203, also connects the source electrode of the 9th transistor M209; The drain electrode of the 3rd transistor M203 connects the negative input of second resistance R 202 and comparator C 202; The grid of the first transistor M201 connects the grid of transistor seconds M202 and the drain electrode of the first transistor M201, and the drain electrode of the first transistor M201 connects the source electrode of the 8th transistor M208; The drain electrode of transistor seconds M202 connects the electrode input end of the first transistor R201 and comparator C 201; The output of comparator C 201 connects the input of inverter C202; The output output signal b0 of comparator C 201, the output output signal bb0 of inverter C202.
Described repairing transfers current generating circuit to comprise some current mirrors and first K switch 20 and second switch K21 that circuit connects.
The 7th group of current mirror comprises the 6th transistor M206 and the 7th transistor M207, and the 8th group of current mirror comprises the 15 transistor M215 and the 16 transistor M216, and the 9th group of current mirror comprises the 17 transistor M217 and the 18 transistor M218.
The source electrode of the 16 transistor M216 and the 17 transistor M217 is connected repaiies the accent electric current I
TirmThe grid of the 16 transistor M216 connects grid and the source electrode of the 15 transistor M215, the grid of the 17 transistor M217 connects grid and the source electrode of the 18 transistor M218, connect the drain electrode of the 5th transistor M205 behind the source series second switch K21 of the 15 transistor M215, the source electrode of the 18 transistor M218 connects the drain electrode of the 7th transistor M207, the grid of the 7th transistor M207 connects grid and the drain electrode of the 6th transistor M206, the drain electrode of the 6th transistor M206 first K switch 20 back of connecting connects the source electrode of the 14 transistor M214, the break-make of first K switch 20 is controlled by signal b0, and the break-make of second switch K21 is controlled by signal bb0.
As shown in Figure 2, to float the operation principle of repairing demodulation circuit as follows for low temperature provided by the invention:
The electric current that flows through on the transistor M210 is by current mirror M209, M212 and M204, M205 equal proportion mirror image is given transistor M205, the electric current that flows through on the transistor M211 is by current mirror M213, M214 equal proportion mirror image is given transistor M214, if there are mismatch in transistor M210 and transistor M211, the electric current that flows through on transistor M205 and the transistor M214 will be inconsistent, and electric current who big who little also be uncertain, in the present invention, provide and judged whose big whose little preferred circuit of this two-way electric current: the electric current that flows through on the transistor M211 is by current mirror M213, M208 and M201, the M202 mirror image is given transistor M202, the electric current that flows through on the transistor M210 is by current mirror M204, the M203 mirror image is given transistor M203, the electric current that flows through on transistor M202 and the transistor M203 flows through first resistance R 201 and second resistance R 202 that resistance equates respectively, the voltage that produces inputs to the positive and negative two ends of comparator C 201 respectively, if the electric current that flows through on the transistor M211 is greater than the electric current that flows through on the transistor M210, comparator C 201 output b0 are high level, the bb0 that exports behind the process inverter C202 is low level, first K switch 20 is strobed, transistor M214 goes up unnecessary electric current and flows through transistor M 206, and by current mirror M206, M207 and M218, the M217 mirror image is given to repair and is transferred electric current I trim, if the electric current that flows through on the transistor M210 is greater than the electric current that flows through on the transistor M211, the output b0 of comparator C 201 is low level, the bb0 that exports behind the process inverter C202 is high level, second switch K21 is strobed, transistor M205 goes up unnecessary electric current and flows through transistor M215, and by current mirror M215, the M216 mirror image is given to repair and is transferred electric current I trim.
The present invention produces repaiies that to transfer electric current I trim no longer be a fixed current, but be complementary with each chip input transistors mismatch, and temperature coefficient also and between the input transistors mates, if the input transistors mismatch raises along with temperature and becomes big, need to flow through bigger opposite different electric currents between two input transistors in theory, offset voltage just may diminish, repair repairing that demodulation circuit produces and transfer electric current I trim to finish this theoretical function really and in fact float by low temperature provided by the present invention, make the temperature of offset voltage float reduction.
In the prior art, 5 bits need be finished the function of repairing the selection of accent direction by 1 bit, and provided by the present invention repairing in the demodulation circuit, repair and transfer the selection of direction just can directly obtain by the inverter C202 that comparator C 201 and back connect, therefore can under the situation of lacking a bit than prior art, provide the same accent scope of repairing, reduce and repaiied between timing and the cost of chip.
Although content of the present invention has been done detailed introduction by above preferred embodiment, will be appreciated that above-mentioned description should not be considered to limitation of the present invention.After those skilled in the art have read foregoing, for multiple modification of the present invention with to substitute all will be apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (4)
1. one kind is used for the amplifier offset voltage and repaiies the low temperature of accent and float and repair demodulation circuit, it is characterized in that, this low temperature floats to be repaiied demodulation circuit and comprise input transistors that circuit connects to, size of current decision circuit and repair the accent current generating circuit;
Input transistors is to comprising the tenth transistor M210 and the 11 transistor M211, and the source electrode of the tenth transistor M210 and the 11 transistor M211 is connected current source I20, and the grid of the tenth transistor M210 and the 11 transistor M211 is connected v20;
Described size of current decision circuit comprises some current mirrors, comparator C 201, the inverter C202 that circuit connects, and first resistance R 201 and second resistance R 202;
First group of current mirror comprises the first transistor M201 and transistor seconds M202, second group of current mirror comprises the 3rd transistor M203 and the 4th transistor M204, the 3rd group of current mirror comprises the 4th transistor M204 and the 5th transistor M205, the 4th group of current mirror comprises the 9th transistor M209 and the tenth two-transistor M212, the 5th group of current mirror comprises the 13 transistor M213 and the 14 transistor M214, and the 6th group of current mirror comprises the 8th transistor M208 and the 13 transistor M213;
Described repairing transfers current generating circuit to comprise some current mirrors and first K switch 20 and second switch K21 that circuit connects;
The 7th group of current mirror comprises the 6th transistor M206 and the 7th transistor M207, and the 8th group of current mirror comprises the 15 transistor M215 and the 16 transistor M216, and the 9th group of current mirror comprises the 17 transistor M217 and the 18 transistor M218.
2. the low temperature of repairing accent for the amplifier offset voltage as claimed in claim 1 floats and repaiies demodulation circuit, it is characterized in that described the tenth transistor M210 and the 11 transistor M211 are biased in the supply voltage of half.
3. the low temperature of repairing accent for the amplifier offset voltage as claimed in claim 1 floats and repaiies demodulation circuit, it is characterized in that, the drain electrode of the tenth transistor M210 connects source electrode and the grid of the tenth two-transistor M212, the grid that also connects the 9th transistor M209, the drain electrode of the 11 transistor M211 connects source electrode and the grid of the 13 transistorized M213, the grid that also connects the 14 transistor M214 also connects the grid of the 8th transistor M208; The drain electrode of the 5th transistor M205 connects the source electrode of the 14 transistor M214, also connects grid and the drain electrode of the 4th transistor M204, also connects the grid of the 3rd transistor M203, also connects the source electrode of the 9th transistor M209; The drain electrode of the 3rd transistor M203 connects the negative input of second resistance R 202 and comparator C 202; The grid of the first transistor M201 connects the grid of transistor seconds M202 and the drain electrode of the first transistor M201, and the drain electrode of the first transistor M201 connects the source electrode of the 8th transistor M208; The drain electrode of transistor seconds M202 connects the electrode input end of the first transistor R201 and comparator C 201; The output of comparator C 201 connects the input of inverter C202; The output output signal b0 of comparator C 201, the output output signal bb0 of inverter C202.
4. the low temperature of repairing accent for the amplifier offset voltage as claimed in claim 1 floats and repaiies demodulation circuit, it is characterized in that the source electrode of the 16 transistor M216 and the 17 transistor M217 is connected repaiies the accent electric current I
TirmThe grid of the 16 transistor M216 connects grid and the source electrode of the 15 transistor M215, the grid of the 17 transistor M217 connects grid and the source electrode of the 18 transistor M218, connect the drain electrode of the 5th transistor M205 behind the source series second switch K21 of the 15 transistor M215, the source electrode of the 18 transistor M218 connects the drain electrode of the 7th transistor M207, the grid of the 7th transistor M207 connects grid and the drain electrode of the 6th transistor M206, the drain electrode of the 6th transistor M206 first K switch 20 back of connecting connects the source electrode of the 14 transistor M214, the break-make of first K switch 20 is controlled by signal b0, and the break-make of second switch K21 is controlled by signal bb0.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310238489.1A CN103338011B (en) | 2013-06-17 | 2013-06-17 | A kind of Low Drift Temperature trimmed for offset voltage of amplifier trims circuit |
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| CN201310238489.1A CN103338011B (en) | 2013-06-17 | 2013-06-17 | A kind of Low Drift Temperature trimmed for offset voltage of amplifier trims circuit |
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| CN103338011A true CN103338011A (en) | 2013-10-02 |
| CN103338011B CN103338011B (en) | 2016-04-06 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109213253A (en) * | 2018-09-28 | 2019-01-15 | 聚辰半导体(上海)有限公司 | A kind of quick High Precision Low Temperature drift strong pull-down current generating circuit |
| CN114167939A (en) * | 2021-12-07 | 2022-03-11 | 厦门半导体工业技术研发有限公司 | Adjusting circuit and method of band-gap reference voltage source and band-gap reference voltage source |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3099840B2 (en) * | 1991-10-28 | 2000-10-16 | 三菱電機株式会社 | Pressure sensor device and temperature compensation adjustment method thereof |
| CN101933227A (en) * | 2008-01-29 | 2010-12-29 | 高通股份有限公司 | Differential amplifier with accurate input offset voltage |
| CN102136827A (en) * | 2011-05-10 | 2011-07-27 | 覃超 | Differential amplifier capable of compensating input offset voltage and compensating method |
-
2013
- 2013-06-17 CN CN201310238489.1A patent/CN103338011B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3099840B2 (en) * | 1991-10-28 | 2000-10-16 | 三菱電機株式会社 | Pressure sensor device and temperature compensation adjustment method thereof |
| CN101933227A (en) * | 2008-01-29 | 2010-12-29 | 高通股份有限公司 | Differential amplifier with accurate input offset voltage |
| CN102136827A (en) * | 2011-05-10 | 2011-07-27 | 覃超 | Differential amplifier capable of compensating input offset voltage and compensating method |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109213253A (en) * | 2018-09-28 | 2019-01-15 | 聚辰半导体(上海)有限公司 | A kind of quick High Precision Low Temperature drift strong pull-down current generating circuit |
| CN114167939A (en) * | 2021-12-07 | 2022-03-11 | 厦门半导体工业技术研发有限公司 | Adjusting circuit and method of band-gap reference voltage source and band-gap reference voltage source |
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| CN103338011B (en) | 2016-04-06 |
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Address after: 201203 No. 12, Lane 647, Songtao Road, Shanghai China (Shanghai) Free Trade Pilot Area Patentee after: Juchen Semiconductor Co., Ltd. Address before: 201203 No. 12, Lane 647, Songtao Road, Zhangjiang High-tech Park, Pudong New Area, Shanghai Patentee before: Giantec Semiconductor Inc. |
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