CN105575765A - Wafer production technology - Google Patents
Wafer production technology Download PDFInfo
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- CN105575765A CN105575765A CN201410550980.2A CN201410550980A CN105575765A CN 105575765 A CN105575765 A CN 105575765A CN 201410550980 A CN201410550980 A CN 201410550980A CN 105575765 A CN105575765 A CN 105575765A
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- wafer
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- crystal bar
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Abstract
The invention discloses a wafer production technology. The technology comprises the following steps of a crystal bar growth process; crystal bar cutting and detection; external diameter grinding; slicing; edge polishing; grinding; etching; gettering; polishing and cleaning. A technological process is simple. Quality of the generated wafer is high. Simultaneously, production cost is reduced and a product yield rate is increased.
Description
Technical field
The present invention relates to wafer fabrication techniques field, particularly relate to a kind of wafer production technology.
Background technology
Wafer refers to the silicon wafer that Si semiconductor production of integrated circuits is used, because its shape is circular, therefore is called wafer.Various circuit component structure can be manufactured on silicon, and become the IC product having certain electric sexual function.The original material of wafer is silicon, and there is nexhaustible silicon dioxide on earth's crust surface.Silicon dioxide ore refines via arc furnace, chlorination of hydrochloric acid, and after distillation, has made highly purified polysilicon.But traditional wafer production technology is very different, totally all there is process loaded down with trivial details, cost is high, the deficiency that yield is low.
Summary of the invention
The object of the invention is to by a kind of wafer production technology, solve the problem that above background technology part is mentioned.
For reaching this object, the present invention by the following technical solutions:
A kind of wafer production technology, it comprises the steps:
S101, crystal bar growth operation;
S102, crystal bar cut and detection: the crystal bar grown up to is removed the below standard head of diameter, portion, and detect size;
S103, external diameter grind: repair external diameter, grind, make its size, form error is all less than permissible variation;
S104, section: crystal bar is cut into blocks of thin slice by the thin slice saw blade that employing ring-type, its inner diameter edge are inlaid with diamond grains;
S105, round edge: computer controling equipment automatic dressing Waffer edge shape and outside dimension;
S106, grinding: the kerf produced in wafer surface when removing cutting and breakage, make the fineness that wafer surface reaches required;
S107, etching: with the method for chemical etching, remove one deck damage layer produced in wafer surface after above-mentioned steps processing;
S108, remove defect: with sand-blast, the flaw on wafer and defect are felt lower half storey;
S109, polishing: polishing is carried out to the edge of wafer and surface, removes the particulate be attached on wafer, obtain splendid surface smoothness;
S1010, cleaning: the wafer machined thoroughly to be cleaned, air-dry.
Especially, also step is comprised after described step S1010: S1011, inspection: whether the size of inspection product, shape, surface smoothness, evenness reach regulation requirement.
Especially, described step S101 specifically comprises: melt, be placed in quartz crucible, be heated to its fusing point, make it melt completely by the compound crystal silicon of bulk; Neck growth, after treating that silicon melts the temperature stabilization of slurry, inserts crystal seed wherein, is then up promoted by crystal seed, make its reduced to pre-set dimension; Brilliant hat is grown up, and after neck growth completes, reduces hoisting velocity and temperature, makes recess diameter be increased to required size gradually; Crystal growth, adjusts hoisting velocity and melts refining temperature, maintains fixing boule diameter, until boule length; Afterbody is grown up, and accelerates hoisting velocity again and improve to melt refining temperature after boule length reaches predetermined value, boule diameter is diminished gradually, crystal bar is separated completely with liquid level.
Wafer production technology process provided by the invention is simple, and the wafer quality produced is high, reduces production cost simultaneously, improves product yield.
Accompanying drawing explanation
The wafer production technology flow chart that Fig. 1 provides for the embodiment of the present invention.
Embodiment
Below in conjunction with drawings and Examples, the invention will be further described.Be understandable that, specific embodiment described herein is only for explaining the present invention, but not limitation of the invention.It also should be noted that, for convenience of description, illustrate only part related to the present invention in accompanying drawing but not full content.
Please refer to shown in Fig. 1, the wafer production technology flow chart that Fig. 1 provides for the embodiment of the present invention.
In the present embodiment, wafer production technology specifically comprises the steps:
S101, crystal bar growth operation.Detailed process comprises: melt, be placed in quartz crucible, be heated to its fusing point, make it melt completely by the compound crystal silicon of bulk; Neck growth, after treating that silicon melts the temperature stabilization of slurry, inserts crystal seed wherein, is then up promoted by crystal seed, make its reduced to pre-set dimension; Brilliant hat is grown up, and after neck growth completes, reduces hoisting velocity and temperature, makes recess diameter be increased to required size gradually; Crystal growth, adjusts hoisting velocity and melts refining temperature, maintains fixing boule diameter, until boule length; Afterbody is grown up, and accelerates hoisting velocity again and improve to melt refining temperature after boule length reaches predetermined value, boule diameter is diminished gradually, crystal bar is separated completely with liquid level.
S102, crystal bar cut and detection: the crystal bar grown up to is removed the below standard head of diameter, portion, and detect size.
S103, external diameter grind: repair external diameter, grind, make its size, form error is all less than permissible variation.
S104, section: crystal bar is cut into blocks of thin slice by the thin slice saw blade that employing ring-type, its inner diameter edge are inlaid with diamond grains.
S105, round edge: computer controling equipment automatic dressing Waffer edge shape and outside dimension.
S106, grinding: the kerf produced in wafer surface when removing cutting and breakage, make the fineness that wafer surface reaches required.
S107, etching: with the method for chemical etching, remove one deck damage layer produced in wafer surface after above-mentioned steps processing.
S108, remove defect: with sand-blast, the flaw on wafer and defect are felt lower half storey.
S109, polishing: polishing is carried out to the edge of wafer and surface, removes the particulate be attached on wafer, obtain splendid surface smoothness.
S1010, cleaning: the wafer machined thoroughly to be cleaned, air-dry.
S1011, inspection: whether the size of inspection product, shape, surface smoothness, evenness reach regulation requirement.
Technical scheme technical process of the present invention is simple, and the wafer quality produced is high, reduces production cost simultaneously, improves product yield.
Note, above are only preferred embodiment of the present invention and institute's application technology principle.Skilled person in the art will appreciate that and the invention is not restricted to specific embodiment described here, various obvious change can be carried out for a person skilled in the art, readjust and substitute and can not protection scope of the present invention be departed from.Therefore, although be described in further detail invention has been by above embodiment, the present invention is not limited only to above embodiment, when not departing from the present invention's design, can also comprise other Equivalent embodiments more, and scope of the present invention is determined by appended right.
Claims (3)
1. a wafer production technology, is characterized in that, comprises the steps:
S101, crystal bar growth operation;
S102, crystal bar cut and detection: the crystal bar grown up to is removed the below standard head of diameter, portion, and detect size;
S103, external diameter grind: repair external diameter, grind, make its size, form error is all less than permissible variation;
S104, section: crystal bar is cut into blocks of thin slice by the thin slice saw blade that employing ring-type, its inner diameter edge are inlaid with diamond grains;
S105, round edge: computer controling equipment automatic dressing Waffer edge shape and outside dimension;
S106, grinding: the kerf produced in wafer surface when removing cutting and breakage, make the fineness that wafer surface reaches required;
S107, etching: with the method for chemical etching, remove one deck damage layer produced in wafer surface after above-mentioned steps processing;
S108, remove defect: with sand-blast, the flaw on wafer and defect are felt lower half storey;
S109, polishing: polishing is carried out to the edge of wafer and surface, removes the particulate be attached on wafer, obtain splendid surface smoothness;
S1010, cleaning: the wafer machined thoroughly to be cleaned, air-dry.
2. wafer production technology according to claim 1, is characterized in that, also comprises step after described step S1010: S1011, inspection: whether the size of inspection product, shape, surface smoothness, evenness reach regulation requirement.
3. the wafer production technology according to any one of claim 1 or 2, it is characterized in that, described step S101 specifically comprises:
Melt, the compound crystal silicon of bulk is placed in quartz crucible, is heated to its fusing point, make it melt completely; Neck growth, after treating that silicon melts the temperature stabilization of slurry, inserts crystal seed wherein, is then up promoted by crystal seed, make its reduced to pre-set dimension; Brilliant hat is grown up, and after neck growth completes, reduces hoisting velocity and temperature, makes recess diameter be increased to required size gradually; Crystal growth, adjusts hoisting velocity and melts refining temperature, maintains fixing boule diameter, until boule length; Afterbody is grown up, and accelerates hoisting velocity again and improve to melt refining temperature after boule length reaches predetermined value, boule diameter is diminished gradually, crystal bar is separated completely with liquid level.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410550980.2A CN105575765A (en) | 2014-10-16 | 2014-10-16 | Wafer production technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410550980.2A CN105575765A (en) | 2014-10-16 | 2014-10-16 | Wafer production technology |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105575765A true CN105575765A (en) | 2016-05-11 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN201410550980.2A Pending CN105575765A (en) | 2014-10-16 | 2014-10-16 | Wafer production technology |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108081118A (en) * | 2016-11-22 | 2018-05-29 | 株式会社迪思科 | The processing method of chip |
| CN108687652A (en) * | 2018-05-29 | 2018-10-23 | 李涵 | A kind of semiconductor chip fabrication process |
| CN108754612A (en) * | 2018-05-21 | 2018-11-06 | 王青 | A kind of production technology of wafer |
| CN108995060A (en) * | 2018-07-26 | 2018-12-14 | 合肥米弘智能科技有限公司 | A kind of semiconductor integrated circuit wafer fabrication lines and its production and processing method |
| CN110126106A (en) * | 2019-06-17 | 2019-08-16 | 浙江晶特光学科技有限公司 | Wafer processing method |
| CN110587842A (en) * | 2019-10-25 | 2019-12-20 | 江苏晶杰光电科技有限公司 | Process for manufacturing silicon carbide single crystal wafer |
| CN111181518A (en) * | 2019-12-28 | 2020-05-19 | 珠海市东恒电子有限公司 | Balanced unbalanced radio frequency conversion component manufacturing method |
| CN114211132A (en) * | 2021-11-11 | 2022-03-22 | 江苏富乐德石英科技有限公司 | Processing method of quartz wafer |
-
2014
- 2014-10-16 CN CN201410550980.2A patent/CN105575765A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108081118A (en) * | 2016-11-22 | 2018-05-29 | 株式会社迪思科 | The processing method of chip |
| CN108081118B (en) * | 2016-11-22 | 2021-11-30 | 株式会社迪思科 | Method for processing wafer |
| CN108754612A (en) * | 2018-05-21 | 2018-11-06 | 王青 | A kind of production technology of wafer |
| CN108754612B (en) * | 2018-05-21 | 2020-11-10 | 深圳市克拉尼声学科技有限公司 | Production process of wafer |
| CN108687652A (en) * | 2018-05-29 | 2018-10-23 | 李涵 | A kind of semiconductor chip fabrication process |
| CN108995060A (en) * | 2018-07-26 | 2018-12-14 | 合肥米弘智能科技有限公司 | A kind of semiconductor integrated circuit wafer fabrication lines and its production and processing method |
| CN108995060B (en) * | 2018-07-26 | 2020-09-18 | 温州怡沃机械科技有限公司 | Semiconductor integrated circuit wafer processing production line and production processing method thereof |
| CN110126106A (en) * | 2019-06-17 | 2019-08-16 | 浙江晶特光学科技有限公司 | Wafer processing method |
| CN110587842A (en) * | 2019-10-25 | 2019-12-20 | 江苏晶杰光电科技有限公司 | Process for manufacturing silicon carbide single crystal wafer |
| CN111181518A (en) * | 2019-12-28 | 2020-05-19 | 珠海市东恒电子有限公司 | Balanced unbalanced radio frequency conversion component manufacturing method |
| CN114211132A (en) * | 2021-11-11 | 2022-03-22 | 江苏富乐德石英科技有限公司 | Processing method of quartz wafer |
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| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20160511 |
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| WD01 | Invention patent application deemed withdrawn after publication |