CN105552146A - Crystal silicon battery and fabrication method thereof - Google Patents
Crystal silicon battery and fabrication method thereof Download PDFInfo
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- CN105552146A CN105552146A CN201610101445.8A CN201610101445A CN105552146A CN 105552146 A CN105552146 A CN 105552146A CN 201610101445 A CN201610101445 A CN 201610101445A CN 105552146 A CN105552146 A CN 105552146A
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 74
- 239000010703 silicon Substances 0.000 title claims abstract description 74
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 70
- 239000013078 crystal Substances 0.000 title claims abstract description 63
- 238000000034 method Methods 0.000 title claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 15
- 229910052709 silver Inorganic materials 0.000 claims description 15
- 239000004332 silver Substances 0.000 claims description 15
- 239000002002 slurry Substances 0.000 claims description 12
- 239000005357 flat glass Substances 0.000 claims description 7
- 238000007650 screen-printing Methods 0.000 claims description 7
- 238000005245 sintering Methods 0.000 claims description 7
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 abstract 2
- 238000010248 power generation Methods 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000002310 reflectometry Methods 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000003760 hair shine Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a crystal silicon battery. The crystal silicon battery comprises a positive electrode, wherein the positive electrode is arranged on the front surface of the battery piece and comprises a fine grid line extending towards a side edge, and an included angle Alpha between a plane where the upper side edge of the fine grid line is located and a vertical direction of the surface of the battery piece is greater than or equal to an incident angle Alpha<0> of solar light. Further, the invention also provides a fabrication method of the crystal silicon battery, which is applied to the above crystal silicon battery. According to the crystal silicon battery and the fabrication method of the crystal silicon battery, the included angle Alpha between the plane where the upper side edge of the fine grid line is located and the vertical direction of the surface of the battery piece is greater than or equal to the incident angle Alpha<0> of solar light, so that the sun light cannot be blocked by the fine grid line when irradiating onto the surface of the battery piece, a shadow area existing on the surface of the battery piece is reduced, the area for receiving sunlight of the battery piece is increased, the utilization of the sunlight irradiating onto the surface of the battery piece is improved, and the power generation efficiency of the battery piece is improved.
Description
Technical field
The present invention relates to photovoltaic module field, particularly relate to a kind of crystal silicon battery and manufacture method thereof.
Background technology
Typical case's crystal silicon battery includes five parts such as substrate, coarse surface structure, P-N diode, anti-reflecting layer, metal electrode, wherein, metal electrode comprises battery front side and backplate, and front electrode (that is battery main gate line) also can stretch out a series of very thin metal finger toward side, be commonly referred to as graticule (that is the thin grid line of battery), metal electrode Main Function collects and extracted current.
Generally speaking, front metal line can block the incident light area of 3 ~ 5%, and metal material is generally silver alloy, and silver slurry is adsorbed onto on base material by screen printing technique.Silicon chip after silk screen printing need through sintering furnace Fast Sintering, formed almost pure, due to nature of glass effect closely sealed grid line on silicon chip.
The general rectangular structure in thin grid line cross section (reality is the shape of irregular similar rectangle), have certain altitude to exist, when light shines battery surface with certain incidence angle, have shade to a certain degree, be called shadow effect, along with angle of sun rays change, battery shaded area changes thereupon.And reflected incident light also can be gone out by the metal flat structure of thin grid line, thus reduces monolithic battery overall efficiency.
Summary of the invention
The object of this invention is to provide a kind of crystal silicon battery and manufacture method thereof, improve generating efficiency, improve the power of crystal silicon battery and photovoltaic module.
For solving the problems of the technologies described above, embodiments provide a kind of crystal silicon battery, comprise the front electrode being arranged on cell piece front, described front electrode comprises the thin grid line extended to side, and the angle α of the plane at the upper side edge place of described thin grid line and the vertical direction on described cell piece surface is more than or equal to the incidence angle α of sunlight
0.
Wherein, the anti-film of increasing being arranged on described thin grid line surface is also comprised.
Wherein, the anti-film of described increasing is TiO
2film or AlO film.
Wherein, the plated surface of described thin grid line is provided with Ag films.
Wherein, the angle α of the plane at the upper side edge place of described thin grid line and the vertical direction on described cell piece surface:
α≤90 °-β
0/ 2, wherein β
0for the cirtical angle of total reflection of cover-plate glass.
Wherein, the longitudinal section of described thin grid line is isosceles triangle or isosceles trapezoid.
Wherein, described thin grid line is width is 50 μm-55 μm, is highly the thin grid line of 11 μm-15 μm.
In addition, present invention also offers a kind of crystal silicon battery manufacture method, be applied to the crystal silicon battery as described in above-mentioned any one, comprise:
To the cell piece completing sintering, carry out silk screen printing;
The thin grid of each described cell piece print one deck silver slurry;
Before described silver slurry does not also solidify completely, use a reverse V-shaped mould to suppress, grid thin described in every bar obtain pyramidal structure.
The crystal silicon battery that the embodiment of the present invention provides and manufacture method thereof, compared with prior art, have the following advantages:
Embodiments provide crystal silicon battery, comprise the front electrode being arranged on cell piece front, described front electrode comprises the thin grid line extended to side, and the angle α of the plane at the upper side edge place of described thin grid line and the vertical direction on described cell piece surface is more than or equal to the incidence angle α of sunlight
0.
In addition, the described crystal silicon battery manufacture method that the embodiment of the present invention also provides, is applied to crystal silicon battery as described above, comprises:
To the cell piece completing sintering, carry out silk screen printing;
The thin grid of each described cell piece print one deck silver slurry;
Before described silver slurry does not also solidify completely, use a reverse V-shaped mould to suppress, grid thin described in every bar obtain pyramidal structure.
Described crystal silicon battery and crystal silicon battery manufacture method, be more than or equal to the incidence angle α of sunlight by the angle α of the plane at the upper side edge place of the thin grid line by cell piece surface and the vertical direction on described cell piece surface
0make when sunlight incides cell piece surface, can not be blocked by thin grid line, reduce the existence on the surface of cell piece and put into shadow region area, improve the area of the reception sunlight of cell piece, improve the utilance to the sunlight being radiated at cell piece surface, improve the generated output of cell piece.
In sum, the crystal silicon battery that the embodiment of the present invention provides and crystal silicon battery manufacture method, be more than or equal to the incidence angle α of sunlight by the angle α of the plane at the upper side edge place of the thin grid line by cell piece surface and the vertical direction on described cell piece surface
0, improve the utilance to the sunlight being radiated at cell piece surface, improve the generated output of cell piece.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the vertical view structural representation of silicon wafer battery of the prior art;
Fig. 2 is the schematic diagram of the reception sunlight of the longitudinal section of crystal silicon battery of the prior art;
The schematic diagram of the reception sunlight of the longitudinal section in a kind of embodiment of the crystal silicon battery that Fig. 3 provides for the embodiment of the present invention;
The schematic diagram of the reception sunlight of the longitudinal section in a kind of embodiment of the crystal silicon battery that Fig. 4 provides for the embodiment of the present invention;
Step schematic diagram in a kind of embodiment of the manufacture method of the crystal silicon battery that Fig. 5 provides for the embodiment of the present invention.
Embodiment
Just as described in the background section, in prior art, the general rectangular structure in thin grid line 1 cross section (reality is the shape of irregular similar rectangle) as depicted in figs. 1 and 2, have certain altitude to exist, when light shines battery surface with certain incidence angle, have shade 2 to a certain degree, be called shadow effect, along with angle of sun rays change, battery shaded area changes thereupon.And reflected incident light also can be gone out by the metal flat structure of thin grid line, thus reduces monolithic battery overall efficiency.
Starting point of the present invention is the structure by redesigning thin grid line, make the cell piece of the shadow region being originally in thin grid line, sunlight can be absorbed, improve the utilance in the region of the absorption sunlight on cell piece surface, absorb originally aerial sunlight may be reflected back from thin grid line, improve sunlight absorption efficiency, improve generated output.
Can be in the present invention on the basis of original thin grid line, original thin grid line and shadow region are designed to new thin grid line simultaneously, or former thin grid line is intercepted a triangular prism, shadow region is disappeared, in order to not increase the resistance of thin grid line, a kind of mode before general selection.
Based on this, embodiments provide a kind of crystal silicon battery, comprise the front electrode being arranged on cell piece front, described front electrode comprises the thin grid line extended to side, and the angle α of the plane at the upper side edge place of described thin grid line and the vertical direction on described cell piece surface is more than or equal to the incidence angle α of sunlight
0.
In addition, present invention also offers a kind of described crystal silicon battery manufacture method, be applied to crystal silicon battery as described above, comprise:
To the cell piece completing sintering, carry out silk screen printing;
The thin grid of each described cell piece print one deck silver slurry;
Before described silver slurry does not also solidify completely, use a reverse V-shaped mould to suppress, grid thin described in every bar obtain pyramidal structure
In sum, the described crystal silicon battery that the embodiment of the present invention provides and crystal silicon battery manufacture method, be more than or equal to the incidence angle α of sunlight by the angle α of the plane at the upper side edge place of the thin grid line by cell piece surface and the vertical direction on described cell piece surface
0make when sunlight incides cell piece surface, can not be blocked by thin grid line, reduce the existence on the surface of cell piece and put into shadow region area, improve the area of the reception sunlight of cell piece, improve the utilance to the sunlight being radiated at cell piece surface, improve the generated output of cell piece.
For enabling above-mentioned purpose of the present invention, feature and advantage more become apparent, and are described in detail the specific embodiment of the present invention below in conjunction with accompanying drawing.
Set forth detail in the following description so that fully understand the present invention.But the present invention can be different from alternate manner described here to implement with multiple, those skilled in the art can when without prejudice to doing similar popularization when intension of the present invention.Therefore the present invention is not by the restriction of following public concrete enforcement.
Please refer to the schematic diagram that Fig. 3-4, Fig. 3 is the reception sunlight of longitudinal section in a kind of embodiment of the embodiment of crystal silicon battery of the present invention; Fig. 4 is the schematic diagram of the reception sunlight of longitudinal section in a kind of embodiment of the embodiment of crystal silicon battery of the present invention.
In the concrete mode of one, described crystal silicon battery, comprise the front electrode being arranged on cell piece front, described front electrode comprises the thin grid line 10 extended to side, and the angle α of the plane at the upper side edge place of described thin grid line 10 and the vertical direction on described cell piece surface 20 is more than or equal to the incidence angle α of sunlight
0.
Described crystal silicon battery, is more than or equal to the incidence angle α of sunlight by the angle α of the plane at the upper side edge place of the thin grid line 10 by cell piece surface 20 and the vertical direction on described cell piece surface 20
0make when sunlight incides cell piece surface 20, can not be blocked by thin grid line 10, reduce the existence on the surface of cell piece and put into shadow region area, improve the area of the reception sunlight of cell piece, improve the utilance to the sunlight being radiated at cell piece surface 20, improve the generated output of cell piece.
The surface of described crystal silicon battery, the region with thin grid line 10 cannot absorb sunlight and generate electricity, but absorption sunlight is converted into heat, improve the temperature on crystal silicon battery surface, cause the working temperature of crystal silicon battery too high for avoiding thin grid line 10 too much absorption sunlight, described crystal silicon battery generally also comprises the anti-film of increasing being arranged on described thin grid line 10 surface, anti-film is increased by arranging on thin grid line 10 surface, improve thin grid line 10 surface to the albedo of sunlight, reduce the working temperature of crystal silicon battery.
Concrete, the anti-film of described increasing is TiO
2film or AlO film.
It should be noted that, the present invention is not specifically limited the anti-film of described increasing and thickness thereof, needs to consider according to technology difficulty, process costs etc.
Except above-mentioned increases except anti-film increase reflectivity at plated surface one deck of described thin grid line 10, can also by changing reflecting material, the material of original antiradar reflectivity is replaced by the high material of reflectivity, as as described in the plated surface of thin grid line 10 be provided with Ag films, because the reflectivity of silver is higher than the reflectivity of thin grid line 10, plating is located at the surface of described thin grid line 10, improves thin grid line 10 surface to positive light reflectance.It should be noted that, the present invention can also establish the material of other strong reflection at the plated surface of described thin grid line 10, the present invention does not limit.In same the present invention, the silver on thin grid line 10 surface is except passing through plating, and can also be obtained by the mode of brush silver slurry, the present invention does not limit the set-up mode of the silver on described thin grid line 10 surface and thickness.
And if the direct reflection of a part of sunlight being radiated at described thin grid line 10 surface can be aerial, just have some to waste.Owing to being irradiated to the reflection of sunlight through meticulous grid line 10 on thin grid line 10 surface, return in the process of air, be bound to the cover-plate glass 30 on the cell piece surface 20 through covering crystal-silicon battery slice, if total reflection can be there is on the surface of cover-plate glass 30, also can return to the surface of crystal-silicon battery slice, also the solar energy of the effective coverage being radiated at crystal-silicon battery slice is just added, improve the utilance of the sunlight being radiated at crystal silicon battery surface, improve generated output, therefore, the angle α of the plane at the upper side edge place of described thin grid line 10 and the vertical direction on described cell piece surface 20:
α≤90 °-β
0/ 2, wherein β
0for the cirtical angle of total reflection of cover-plate glass 30.
Because the cross section of thin grid line 10 of the prior art is rectangle, as long as its side is set to inclined-plane, can can reduce the area of shadow region, if only have the side of thin grid line 10 to be set to inclined-plane, so should be noted that installation direction when installing crystal silicon battery, or on the surface of crystal silicon battery, mark is set, and thin grid line 10 width generally less than 0.1mm, naked eyes identification bothers very much, and assembling mark is made on the surface of crystal silicon battery, need to take certain area, reduce effective generating area, therefore, the longitudinal section of described thin grid line 10 is isosceles triangle or isosceles trapezoid, the both sides of so thin grid line 10 have inclined-plane, just there is not the problem of installation direction, increase an inclined-plane simultaneously, also can increase the incidence angle reflexing to cover-plate glass 30, after being designed to be more than or equal to the cirtical angle of total reflection of cover-plate glass 30, increase the sunlight energy reflexing to crystal silicon battery surface, improve generated output.
In general crystal-silicon battery slice, described thin grid line 10 is 50 μm-55 μm for width, is highly the thin grid line 10 of 11 μm-15 μm.It should be noted that, the present invention is to the width of described thin grid line 10 and highly do not limit, and needs to set according to the specification of reality.
Silicon wafer cell piece is equivalent to secondary printing, adds the sectional area of thin grid line 10, thin grid line 10 resistance is reduced, reduces the current loss of crystal silicon battery, namely add the generating efficiency of silicon wafer battery.
In addition, present invention also offers a kind of manufacture method of crystal silicon battery, be applied to the crystal silicon battery as described in above-mentioned any one, comprise:
Step 10, to the cell piece completing sintering, carries out silk screen printing;
Step 20, the thin grid of each described cell piece print one deck silver slurry;
Step 30, before described silver slurry does not also solidify completely, uses a reverse V-shaped mould to suppress, grid thin described in every bar obtains pyramidal structure.
In sum, the crystal silicon battery described in the embodiment of the present invention and the manufacture method of crystal silicon battery, be more than or equal to the incidence angle α of sunlight by the angle α of the plane at the upper side edge place of the thin grid line by cell piece surface and the vertical direction on described cell piece surface
0make, when sunlight incides cell piece surface, to be blocked by thin grid line, reduce the existence on the surface of cell piece and put into shadow region area, improve the area of the reception sunlight of cell piece, improve the utilance to the sunlight being radiated at cell piece surface, improve the generated output of cell piece, silicon wafer cell piece is equivalent to secondary printing, add the sectional area of thin grid line, thin grid line resistance is reduced, reduces the current loss of crystal silicon battery, namely add the generating efficiency of silicon wafer battery.
Above the manufacture method of crystal silicon battery provided by the present invention and crystal silicon battery is described in detail.Apply specific case herein to set forth principle of the present invention and execution mode, the explanation of above embodiment just understands method of the present invention and core concept thereof for helping.It should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention, can also carry out some improvement and modification to the present invention, these improve and modify and also fall in the protection range of the claims in the present invention.
Claims (8)
1. a crystal silicon battery, comprise the front electrode being arranged on cell piece front, it is characterized in that, described front electrode comprises the thin grid line extended to side, and the angle α of the plane at the upper side edge place of described thin grid line and the vertical direction on described cell piece surface is more than or equal to the incidence angle α of sunlight
0.
2. crystal silicon battery as claimed in claim 1, is characterized in that, also comprise the anti-film of increasing being arranged on described thin grid line surface.
3. crystal silicon battery as claimed in claim 2, it is characterized in that, the anti-film of described increasing is TiO
2film or AlO film.
4. crystal silicon battery as claimed in claim 1, it is characterized in that, the plated surface of described thin grid line is provided with Ag films.
5. the crystal silicon battery as described in claim 2 or 4, is characterized in that, the angle α of the plane at the upper side edge place of described thin grid line and the vertical direction on described cell piece surface:
α≤90 °-β
0/ 2, wherein β
0for the cirtical angle of total reflection of cover-plate glass.
6. crystal silicon battery as claimed in claim 5, it is characterized in that, the longitudinal section of described thin grid line is isosceles triangle or isosceles trapezoid.
7. crystal silicon battery as claimed in claim 6, it is characterized in that, described thin grid line is width is 50 μm-55 μm, is highly the thin grid line of 11 μm-15 μm.
8. a crystal silicon battery manufacture method, is characterized in that, is applied to the crystal silicon battery as described in any one of claim 1-7, comprises:
To the cell piece completing sintering, carry out silk screen printing;
The thin grid of each described cell piece print one deck silver slurry;
Before described silver slurry does not also solidify completely, use a reverse V-shaped mould to suppress, grid thin described in every bar obtain pyramidal structure.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610101445.8A CN105552146A (en) | 2016-02-24 | 2016-02-24 | Crystal silicon battery and fabrication method thereof |
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| CN201610101445.8A CN105552146A (en) | 2016-02-24 | 2016-02-24 | Crystal silicon battery and fabrication method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108110067A (en) * | 2018-01-22 | 2018-06-01 | 南通苏民新能源科技有限公司 | A kind of solar cell assistant grid for increasing opto-electronic conversion benefit and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108110067A (en) * | 2018-01-22 | 2018-06-01 | 南通苏民新能源科技有限公司 | A kind of solar cell assistant grid for increasing opto-electronic conversion benefit and preparation method thereof |
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Application publication date: 20160504 |