CN108110067A - A kind of solar cell assistant grid for increasing opto-electronic conversion benefit and preparation method thereof - Google Patents
A kind of solar cell assistant grid for increasing opto-electronic conversion benefit and preparation method thereof Download PDFInfo
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- CN108110067A CN108110067A CN201810059054.3A CN201810059054A CN108110067A CN 108110067 A CN108110067 A CN 108110067A CN 201810059054 A CN201810059054 A CN 201810059054A CN 108110067 A CN108110067 A CN 108110067A
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- assistant grid
- grid
- assistant
- solar cell
- electronic conversion
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 18
- 230000008901 benefit Effects 0.000 title claims abstract description 17
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 16
- 238000002360 preparation method Methods 0.000 title abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 32
- 239000010703 silicon Substances 0.000 claims abstract description 32
- 229910052709 silver Inorganic materials 0.000 claims abstract description 21
- 239000004332 silver Substances 0.000 claims abstract description 21
- 238000007517 polishing process Methods 0.000 claims abstract description 13
- 238000004587 chromatography analysis Methods 0.000 claims abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims abstract description 3
- 239000002184 metal Substances 0.000 claims abstract description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 6
- 238000005245 sintering Methods 0.000 claims description 5
- 238000001035 drying Methods 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 230000008859 change Effects 0.000 abstract description 3
- 238000005286 illumination Methods 0.000 abstract description 2
- 230000006872 improvement Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000005622 photoelectricity Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a kind of solar cell assistant grids for increasing opto-electronic conversion benefit and preparation method thereof, the assistant grid is arranged in the metal electrode layer on silicon chip front surface, the top of the assistant grid is equipped with the specular surface body with the equidirectional extension of assistant grid, the specular surface body is symmetrical structure, its cross section is isosceles triangle, inclined mirror plane including both sides and the bottom surface overlapped with the top surface of assistant grid.The silver that the specular surface body passes through the one floor height purity of top chromatography in assistant grid, and the mirror plane that there is certain angle with the top surface of assistant grid is formed in its top surface with radium-shine polishing processes, the mirror plane can reflect incident sunlight, change the propagation light path of sunlight in the battery, so that light area of the sunlight being irradiated on assistant grid through reflected illumination to silicon chip, to improve the photoelectric conversion efficiency of the utilization rate of sunlight and solar cell.
Description
Technical field
The invention belongs to area of solar cell, and in particular to a kind of solar cell pair grid for increasing opto-electronic conversion benefit
Pole and preparation method thereof.
Background technology
In solar cell manufacturing process, the metallic electrode positioned at silicon chip surface is opaque material, can be to hiding
The sun incident light of base part is kept off, in the shading region formed below of the corresponding silicon chip of grid.To promote battery conversion efficiency,
Thin grid line printing has become photovoltaic technology developing direction.The prior art is mainly lost by refining grid to reduce shading, still
Pair grid line shading-area therein still accounts for 45% to the 55% of total shading-area.Therefore the present invention devises a kind of increase photoelectricity
Solar cell assistant grid of benefit and preparation method thereof is converted, to improve the utilization rate for inciding into the sunlight on silicon chip, from
And improve the optoelectronic transformation efficiency of solar cell.
The content of the invention
In view of the above-mentioned problems, the present invention proposes a kind of solar cell assistant grid for increasing opto-electronic conversion benefit and its making
Method.
It realizes above-mentioned technical purpose, reaches above-mentioned technique effect, the invention is realized by the following technical scheme：
A kind of solar cell assistant grid for increasing opto-electronic conversion benefit, the assistant grid are arranged on silicon chip front surface
Metal electrode layer in, set gradually to encapsulate the EVA layer and glassy layer of silicon chip, the assistant grid on the silicon chip
Top be equipped with specular surface body with the equidirectional extension of assistant grid, the specular surface body is symmetrical structure, and cross section is isosceles three
It is angular, inclined mirror plane including both sides and the bottom surface overlapped with the top surface of assistant grid.
As a further improvement on the present invention, the angle between the mirror plane and assistant grid top surface is more than 0 ° or small
In 45 °.
As a further improvement on the present invention, the angle is preferably 30 °.
As a further improvement on the present invention, the width of the assistant grid is 25-45um.
As a further improvement on the present invention, the height of the top of the specular surface body to silicon chip is 15-25um.
As a further improvement on the present invention, the silver content of the assistant grid be 95-99%, the silver content of the specular surface body
More than 99.99%.
A kind of preparation method of the solar cell assistant grid of increase opto-electronic conversion benefit in accordance with the above, including：
In the front of battery, silver paste A prints assistant grid, in the top of assistant grid silver paste B chromatography specular surface bodies after drying
Precast body, the top of shown specular surface body precast body is horizontal plane, and carries out drying sintering；
The top of specular surface body precast body is mirror-finished using radium-shine polishing processes, forms both sides to tilt symmetrical mirror
Plane.
As a further improvement on the present invention, the radium-shine polishing processes include cold throwing method, three-dimensional self-holding polishing processes.
As a further improvement on the present invention, when being mirror-finished to precast body, the laser of laser used transmitting
The angle between angle and the mirror plane formed and assistant grid between vertical plane is equal.
Beneficial effects of the present invention：The present invention is used in combination using the silver by the one floor height purity of top chromatography in assistant grid
Radium-shine polishing processes, which form top surface, symmetrically has the specular surface body of mirror plane.The mirror plane can carry out incident sunlight
Reflection changes the propagation light path of sunlight in the battery so that be irradiated to the sunlight on assistant grid through reflected illumination to silicon chip
Light area, to improve the photoelectric conversion efficiency of the utilization rate of sunlight and solar cell.
Description of the drawings
Fig. 1 is the light path that the structure diagram of solar battery sheet of the prior art and solar irradiation are mapped to assistant grid area
Figure；
Fig. 2 is the light path that the structure diagram of the solar battery sheet in the present invention and solar irradiation are mapped to assistant grid area
Figure；
Fig. 3 is the structure diagram of the assistant grid in the present invention；
Fig. 4 is the manufacturing process of the assistant grid described in Fig. 3；
Fig. 5 is the index path of the first embodiment in the present invention；
Fig. 6 is the index path of second of embodiment in the present invention；
Wherein：1- silicon chips, 2-EVA layers, 3- glassy layers, 4- assistant grids, 5- specular surface bodies, 601-ND-YAG lasers, 602-
ArF/XeCl excimer lasers.
Specific embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, with reference to embodiments, to the present invention
It is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, it is not used to
Limit the present invention.
The application principle of the present invention is explained in detail below in conjunction with the accompanying drawings.
The structure of heretofore described solar cell as shown in Figure 2, the battery include silicon chip 1 and set successively
It puts on 1 surface of silicon chip for encapsulating the EVA layer 2 of silicon chip 1 and glassy layer 3, wherein the improved assistant grid 4 of institute is arranged in the present invention
In 1 positive electrode layer of silicon chip.Heretofore described glassy layer 3 is using total reflection glass.
The structure of the assistant grid 4 of the solar silicon wafers 1 of the present invention as shown in Figures 2 and 3, in the assistant grid 4
Top is provided with the specular surface body 5 with the extending direction synchronous lengthening of assistant grid 4, and the specular surface body 5 is symmetrical structure, crosscutting
Face is isosceles triangle, and bottom surface is identical with the size of the top surface of assistant grid 4, and the two is completely superposed.The specular surface body 5 formed pushes up
The mirror plane in portion angle between inclined plane, and the base plane of assistant grid 4 is set as θ, can be to incident sunlight
It is reflected, changes the direction of propagation of light.In the present invention, the specular surface body 5 uses the silver paste system more than 95% high-purity
It forms, silver content is more than 99.99% after sintering, which can form the mirror plane with high reflectivity.The minute surface
Body 5 is engaged with the total reflection glass positioned at 1 outer layer of silicon chip so that is irradiated to the sun in 4 region of assistant grid by reflecting twice
The light area being irradiated on silicon chip 1, to improve the optoelectronic transformation efficiency of solar cell.
Solar irradiation is mapped to the propagation figure of 1 light path of silicon chip produced by the present invention as shown in figure 5, being wherein irradiated on silicon chip 1
Sunlight incidence angle for φ, the value of φ is between 0-90 °.Reflection light and silicon chip 1 of the sunlight after the reflection of specular surface body 5
Relation between the angle of reflection Θ and φ and θ on surface is as shown in formula one：
ΘIt is left=φ -2 θ
Or ΘIt is right- 2 θ of=(180 ° of-φ)
From formula one, since the maximum of φ is 90 °, between 4 top surface of the mirror plane and assistant grid
The maximum of angle theta is no more than 45 °.And the value of finally obtained angle of reflection Θ increases therewith the increase of φ, the reduction of θ
And increase.Due to Θ values it is too small can so that the sunlight that reflects travels to the distance increase of light area, reflection light with
1 surface of silicon chip is almost parallel, is unfavorable for the sensitive area that reflection light is irradiated to silicon chip 1, but Θ values conference cause reflected light
Line is mapped to again through causing multiple reflections phenomenon on mirror plane, therefore θ needs selected suitable value.
Since the angle shined upon to ground is constantly vary with the variation of season and time, incidence angle φ's
Angle change, can be to institute in order to reduce influences of the incidence angle φ of continually changing sunlight to angle of reflection Θ between 0-90 °
The solar cell stated is adjusted so that the incident ray direct projection of the sun is in the surface of silicon chip 1, such incident ray and secondary grid
The included angle of 4 top surface of pole is 90 °.As shown in fig. 6, simultaneously because the specular surface body 5 uses symmetrical mechanism, as incidence angle φ
Less than the difference of 90 ° of-θ, the specular surface body 5 can only reflect sunlight using the minute surface on the left of wherein making full use of,
The sunlight of the mirror surface reflection on right side can not be through reflecting up on the effective coverage of silicon chip 1, and weaken specular surface body 5 can
The effective area of reflected sunlight.When the value of φ is 90 °, the light propagation mechanism that 5 both sides of specular surface body are formed has symmetrically
Route.Therefore when the angle of angle of incidence of sunlight φ is 90 °, the angle Θ on reflected light and 1 surface of silicon chip is 90 ° of -2 θ.
In an embodiment of the present invention, as shown in Fig. 2, the angle of prepared specular surface body 5 and assistant grid 4 is 30 °
When, the surface of sunlight vertical irradiation silicon chip 1, the luminous energy through reflection 93% can be realized fully reflective.
As described above, the assistant grid 4 for making above-described electrode comprises the following steps：
First, assistant grid 4 is printed with the silver paste A that silver content is 90-95% in the front of electrode, in 200-350 DEG C of item
It is dried under part, in the top of assistant grid 4 silver paste B chromatography rib of the silver content more than 95% after being aligned afterwards by 4+1CCD
Silicon chip 1 is finally sent into sintering furnace, is sintered under conditions of 500-850 DEG C by minute surface.After sintering, silver paste A is in glass
Through silicon nitride film under the action of body, the silver content of the assistant grid formed is 95-99%, and good ohm is formed with emitter
Contact.Upper strata high-purity silver paste B meltings simultaneously form good Ohmic contact with base silver paste.
Then, specular surface body 5 is mirror-finished using radium-shine polishing processes.The radium-shine polishing processes include cold throwing method,
The self-holding polishing processes of three-dimensional.
In a kind of embodiment of the present invention, the mirror plane that angle is 30 ° is formed using cold polishing processes.Specific such as Fig. 4
It is shown, the precast body that high-purity silver is cased on the top of assistant grid is placed in the horizontal plane, afterwards successively using a pair of ND-
YAG laser 601 and ArF/XeCl excimer lasers 602 are placed on institute according to vertical plane in 30 ° of angle symmetrical
The both sides for the specular surface body precast body that need to be polished are polished top planes, so as to be formed in the both sides of specular surface body precast body top surface
Base angle θ is 30 ° of specular surface body.The wherein described ND-YAG lasers 601 use wavelength 532nm, pulse 15ns, energy density
3.2-800J/cm2 laser to precast body top plane carry out rough polishing formed inclined surface；The ArF/XeCl excimer lasers
602 use wavelength 193nm, pulse 15ns, the laser pair of energy density 16.5J/cm2 and the smart throwing of inclined surface progress, form surface
Smooth mirror plane with high reflectivity.
Cold polishing processes of the present invention realize the removal of material by interrupting atom key.During effect, fuel factor can be with
It is ignored, does not crack；The accurate three-dimensional crest smooth mirror that polishing technology can allow secondary grid surface to form 30 ° of angles of controlling oneself
Plane, while the damage of material around will not be caused again.The reflectivity of made minute surface is up to more than 95%.
The width 25-45um of electrode assistant grid 4 made by the present invention, above specular surface body 5 top to silicon chip 1
Highly it is 15-25um.The utilization rate for being irradiated to the sunlight on solar cell is improved by the reflection of minute surface, it can be very big
Raising prepared by battery photoelectric conversion efficiency, the short circuit current flow of battery is enabled to improve 100-250mA, and minute surface
The height that body can increase assistant grid 4 causes fill factor, curve factor to increase 0.2%-0.5%, so that the photoelectricity of solar cell turns
It changes efficiency and finally improves 0.24%-0.6%.
As shown in Table 1, the width for employing the assistant grid 4 of preparation of the present invention is 30-50 μm, the height of specular surface body 5
It spends for 8-15 μm, the base angle θ of specular surface body 5 is between 30 ° of the battery performance of cell piece and the battery performance of conventional batteries piece
Variation relation is as follows：
The basic principles, main features and the advantages of the invention have been shown and described above.The technology of the industry
Personnel are it should be appreciated that the present invention is not limited to the above embodiments, and the above embodiments and description only describe this
The principle of invention, without departing from the spirit and scope of the present invention, various changes and modifications of the present invention are possible, these changes
Change and improvement all fall within the protetion scope of the claimed invention.The claimed scope of the invention by appended claims and its
Equivalent thereof.
Claims (9)
1. a kind of solar cell assistant grid for increasing opto-electronic conversion benefit, the assistant grid are arranged on silicon chip front surface
In metal electrode layer, set gradually to encapsulate the EVA layer and glassy layer of silicon chip on the silicon chip, it is characterised in that：Institute
The top for the assistant grid stated is equipped with the specular surface body with the equidirectional extension of assistant grid, and the specular surface body is symmetrical structure, crosscutting
Face is isosceles triangle, inclined mirror plane including both sides and the bottom surface overlapped with the top surface of assistant grid.
2. a kind of solar cell assistant grid for increasing opto-electronic conversion benefit according to claim 1, it is characterised in that：Institute
Angle between the mirror plane stated and assistant grid top surface is more than 0 ° or less than 45 °.
3. a kind of solar cell assistant grid for increasing opto-electronic conversion benefit according to claim 2, it is characterised in that：Institute
The angle stated is preferably 30 °.
4. a kind of solar cell assistant grid for increasing opto-electronic conversion benefit according to claim 1, it is characterised in that：Institute
The width for the assistant grid stated is 25-45um.
5. a kind of solar cell assistant grid of increase opto-electronic conversion benefit according to claim 2 or 4, feature exist
In：The height of the top of the specular surface body to silicon chip is 15-25um.
6. a kind of solar cell assistant grid for increasing opto-electronic conversion benefit according to claim 1, it is characterised in that：Institute
The silver content for the assistant grid stated is 95-99%, and the silver content of the specular surface body is more than 99.99%.
7. a kind of make according to claim 1, a kind of solar energy for increasing opto-electronic conversion benefit of 2,3,4 or 6 any one of them
The method of battery assistant grid, including：
In the front of battery, silver paste A prints assistant grid, prefabricated with silver paste B chromatography specular surface bodies on the top of assistant grid after drying
Body, the top of shown specular surface body precast body is horizontal plane, and carries out drying sintering；
The top of specular surface body precast body is mirror-finished using radium-shine polishing processes, both sides is formed and is put down to tilt symmetrical mirror
Face.
8. a kind of production method according to claim 7, it is characterised in that：The radium-shine polishing processes include cold throwing method,
The self-holding polishing processes of three-dimensional.
9. a kind of production method according to claim 7, it is characterised in that：It is used when being mirror-finished to precast body
Laser transmitting laser and vertical plane between angle and the mirror plane formed and assistant grid between angle it is equal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810059054.3A CN108110067A (en) | 2018-01-22 | 2018-01-22 | A kind of solar cell assistant grid for increasing opto-electronic conversion benefit and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810059054.3A CN108110067A (en) | 2018-01-22 | 2018-01-22 | A kind of solar cell assistant grid for increasing opto-electronic conversion benefit and preparation method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN108110067A true CN108110067A (en) | 2018-06-01 |
Family
ID=62219163
Family Applications (1)
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|---|---|---|---|
| CN201810059054.3A Pending CN108110067A (en) | 2018-01-22 | 2018-01-22 | A kind of solar cell assistant grid for increasing opto-electronic conversion benefit and preparation method thereof |
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| US20070079864A1 (en) * | 2005-10-11 | 2007-04-12 | Gronet Chris M | Bifacial elongated solar cell devices with internal reflectors |
| CN101874428A (en) * | 2007-11-26 | 2010-10-27 | S·D·沃伦公司 | Tip printing and scrape coating systems and methods for manufacturing electronic devices |
| WO2013046324A1 (en) * | 2011-09-27 | 2013-04-04 | 三洋電機株式会社 | Solar cell and solar cell module |
| CN103400869A (en) * | 2013-06-27 | 2013-11-20 | 北京大学深圳研究生院 | Solar battery and front-side electrode thereof |
| CN103824894A (en) * | 2014-03-10 | 2014-05-28 | 余小翠 | Solar battery with reflector |
| CN104157729A (en) * | 2014-07-22 | 2014-11-19 | 广东爱康太阳能科技有限公司 | Positive electrode structure of crystal silicon solar battery and printing process thereof |
| CN105552146A (en) * | 2016-02-24 | 2016-05-04 | 晶科能源有限公司 | Crystal silicon battery and fabrication method thereof |
| CN107199401A (en) * | 2017-04-24 | 2017-09-26 | 和品（香港）公司 | A kind of laser polishing machine and the polishing method using the laser polishing machine |
| CN207852691U (en) * | 2018-01-22 | 2018-09-11 | 南通苏民新能源科技有限公司 | A kind of solar cell assistant grid increasing opto-electronic conversion benefit |
-
2018
- 2018-01-22 CN CN201810059054.3A patent/CN108110067A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070079864A1 (en) * | 2005-10-11 | 2007-04-12 | Gronet Chris M | Bifacial elongated solar cell devices with internal reflectors |
| CN101874428A (en) * | 2007-11-26 | 2010-10-27 | S·D·沃伦公司 | Tip printing and scrape coating systems and methods for manufacturing electronic devices |
| WO2013046324A1 (en) * | 2011-09-27 | 2013-04-04 | 三洋電機株式会社 | Solar cell and solar cell module |
| CN103400869A (en) * | 2013-06-27 | 2013-11-20 | 北京大学深圳研究生院 | Solar battery and front-side electrode thereof |
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