CN206921827U - Novel thin film solar cell - Google Patents
Novel thin film solar cell Download PDFInfo
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- CN206921827U CN206921827U CN201720733797.5U CN201720733797U CN206921827U CN 206921827 U CN206921827 U CN 206921827U CN 201720733797 U CN201720733797 U CN 201720733797U CN 206921827 U CN206921827 U CN 206921827U
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- electrode
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- counnter attack
- solar cell
- junction structure
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B10/00—Integration of renewable energy sources in buildings
- Y02B10/10—Photovoltaic [PV]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The utility model discloses a kind of novel thin film solar cell, including surface counnter attack layer, outermost reflector, PN junction structure sheaf, first electrode, second electrode, bottom surface selection reflecting layer, wherein, PN junction structure sheaf forms periodic pyramid structure, counnter attack layer in surface is face coat, uniform fold is in the upper surface of PN junction structure sheaf, outermost reflector is arranged at the recess of surface counnter attack layer, first electrode, second electrode are alternately implanted to the inside of PN junction structure sheaf vertically, and the lower end of first electrode and second electrode protrudes from the bottom surface selection bottom surface of reflecting layer 7.In the utility model device, the incident sunshine in surface is largely directly absorbed, by pyramid apical sink after the surface-reflected layer reflection of another part, short wavelength's sunshine that bottom surface selection reflecting layer be able to can be absorbed with layer of reflective material, both the temperature of whole battery structure can have been reduced, the pad pasting being also used as on the outdoor object window such as energy vehicle building or exterior wall uses, and is with a wide range of applications.
Description
Technical field
The present invention relates to solar cell, and in particular to a kind of thin film solar cell.
Background technology
Solar cell is that solar energy is converted directly into electric energy using the photovoltaic effect or photochemical effect of semiconductor
Device, have been commercialized solar cell include crystal silicon solar battery (including crystal silicon and polysilicon) and thin film solar cell (such as silicon substrate,
CIGS, cadmium telluride, nitride-based semiconductor etc.).Develop through last decade, the highest photoelectric transformation efficiency of crystal silicon battery has reached
25.6%, the photoelectric transformation efficiency of component 11% was promoted to present 20% or so before 10 years, and cost declines nearly ten times, but crystal silicon
Battery typically requires that thicker high quality silicon chip is made, and its cost of electricity-generating can't generate electricity with traditional energy to be equal to；Copper and indium gallium
The highest conversion efficiency of selenium and cadmium-Te solar battery has reached 21.7% and 21.5% respectively, and this kind of battery uses high delustring system
Number, direct band gap light absorbent, greatly reduce cell thickness, unijunction and binode gallium arsenide solar cell highest conversion efficiency difference
Reach 28.8% and 30.8%, but its manufacturing cost is high.It is to promote photovoltaic technology progress to improve photoelectric conversion efficiency of the solar battery
One of main target, it is to improve battery efficiency to make full use of solar spectrum and effectively improve the light capture rate of solar cell
One of effective means, therefore, it is essential that suitable light trapping structure is introduced in solar cell.For crystal silicon solar battery and
For thin film solar cell, the design of light trapping structure is all very important, especially under the development trend of battery thin membranization,
Light trapping structure just seems more important, and light trapping structure is applied in solar cell, light can be made repeatedly to lead in battery obsorbing layer
Cross, ensure fully absorbing for incident light, improve absorptivity, so as to while battery physical thickness is further reduced, more can
Enough effectively improve the efficiency of light absorption of battery, but the design of traditional sunken light be all based on the incidence of light path in the vertical direction with
Reflection.On the other hand, gate electrode is distributed with solar battery surface, and it is also to improve having for battery efficiency to reduce gate electrode area as far as possible
One of effect means, but traditional structure can only try one's best to reduce but can not eliminate grid area and sunshine is blocked.
The content of the invention
The purpose of the present invention is to design the novel thin film solar cell of a raising efficiency of light absorption.
The technical solution adopted by the present invention is：A kind of novel thin film solar cell, including surface counnter attack layer, surface reflection
Layer, PN junction structure sheaf, first electrode, second electrode, bottom surface selection reflecting layer, wherein, PN junction structure sheaf forms periodic gold
Word tower structure, surface counnter attack layer are face coat, and uniform fold is arranged at table in the upper surface of PN junction structure sheaf, outermost reflector
The recess of face counnter attack layer, first electrode, second electrode are alternately implanted to the inside of PN junction structure sheaf, wherein first electrode vertically
Implantation depth be more than second electrode, the top of first electrode is close to pyramidal top, and the top of second electrode is close to surface
The lower end of the bottom in reflecting layer, first electrode and second electrode protrudes from the bottom surface selection bottom surface of reflecting layer 7, first electrode, second
Draw to obtain cathode electrode and anode electrode by way of interdigital electrode in the lower end of electrode.
Preferably, the surface counnter attack layer is made of light antireflective material.
Preferably, the surface counnter attack layer is made of silica or magnesium fluoride.
Preferably, the outermost reflector is made of specular reflective material, and its cross section of outermost reflector is triangle,
Summit is less than the highest point of surface counnter attack layer, and drift angle is less than 30 degree, for light to be reflexed into surface counnter attack layer.
Preferably, the PN junction structure sheaf is formed by first material layer, the arrangement of second material layer alternate cycle, the first material
Layer, second material layer collectively constitute pyramid structure, and the drift angle of pyramid structure is less than or equal to 90 degree.
Preferably, the bottom surface selection reflecting layer uses argent, aluminium or SiN/ aluminium.
In apparatus of the present invention, the incident sunshine in surface is largely directly absorbed, and the surface-reflected layer of another part is anti-
By pyramid apical sink after penetrating so that surface falls into light efficiency close to 100%, and bottom surface selection reflecting layer both can be with layer of reflective material
The short wavelength's sunshine that can be absorbed, can also transmit long wavelength's sunshine or some visible light, can both reduce whole battery
The temperature of structure, the pad pasting being also used as on the outdoor object window such as energy vehicle building or exterior wall are used, had a wide range of applications
Prospect.
Brief description of the drawings
Fig. 1 is the side view of the novel thin film solar cell of the present invention.
Fig. 2 is the interdigitated electrode structure schematic diagram of the novel thin film solar cell of the present invention.
The specific embodiment of the invention is described further below in conjunction with the accompanying drawings.
Embodiment
Embodiment 1
A kind of novel thin film solar cell, including surface counnter attack layer 1, outermost reflector 2, first material layer 3, the second material
Layer 4, first electrode 5, second electrode 6, bottom surface selection reflecting layer 7, wherein, first material layer 3, second material layer 4 are in alternate
Periodic arrangement, first material layer 3 is p-type Si, second material layer 4 is N-type Si, and both collectively constitute pyramid structure, its drift angle
Equal to 90 degree, surface counnter attack layer 1 is face coat, is made of silica, and uniform fold is in the material of first material layer 3 and second
The upper surface of the bed of material 4, outermost reflector 2 are arranged at the recess of surface counnter attack layer 1, and outermost reflector 2 uses mirror-reflection material
Material is made, and its cross section of outermost reflector is triangle, and summit is less than the highest point of surface counnter attack layer, and drift angle is equal to 30 degree, uses
In reflexing to light on surface counnter attack layer 1, first electrode 5, second electrode 6 are alternately implanted to first material layer 3, second vertically
The inside of material layer 4, the wherein implantation depth of first electrode 5 are more than second electrode 6, and the top of first electrode 5 is close to the first material
The pyramidal top that the bed of material 3, second material layer 4 collectively constitute, the top of second electrode 6 close to the bottom of outermost reflector,
The lower end of first electrode 5 and second electrode 6 protrudes from the bottom surface selection bottom surface of reflecting layer 7, and first electrode, the lower end of second electrode lead to
The mode for crossing interdigital electrode draws to obtain cathode electrode and anode electrode.Bottom surface selection reflecting layer uses metallic silver into first
Material layer 3, the periodic arrangement width of second material layer 4 or so are 320nm；Whole solar battery structure thickness is 100um.
Embodiment 2
This novel thin film solar cell and the structure of embodiment 1 are basically identical, and difference is that pyramid structure drift angle is 70
Degree, outermost reflector drift angle are 20 degree, and first material layer 3, the periodic arrangement width of second material layer 4 or so are 100nm；Select bottom surface
Select reflecting layer to be made of metallic aluminium, whole solar battery structure thickness is 50nm.
Embodiment 3
This novel thin film solar cell and the structure of embodiment 1 are basically identical, and difference is that pyramid structure drift angle is 60
Degree, outermost reflector drift angle are 10 degree, and first material layer 3, the periodic arrangement width of second material layer 4 or so are 1000um；Entirely
Solar battery structure thickness is 500um.
Other structures can also be inserted in first material layer 3, second material layer 4 to form PN junction structure sheaf, such as are inserted
Enter i type Si layers.Bottom surface selection reflecting layer can also select SiN/ aluminium.
Claims (4)
1. a kind of novel thin film solar cell, including surface counnter attack layer, outermost reflector, PN junction structure sheaf, first electrode, second
Electrode, bottom surface selection reflecting layer, wherein, PN junction structure sheaf forms periodic pyramid structure, and counnter attack layer in surface applies for surface
Layer, for uniform fold in the upper surface of PN junction structure sheaf, outermost reflector is arranged at the recess of surface counnter attack layer, first electrode,
Second electrode is alternately implanted to the inside of PN junction structure sheaf vertically, and the wherein implantation depth of first electrode is more than second electrode, the
The top of one electrode is close to pyramidal top, and the top of second electrode is close to the bottom of outermost reflector, first electrode and the
The lower end of two electrodes protrudes from the bottom surface in bottom surface selection reflecting layer, and first electrode, the lower end of second electrode pass through interdigital electrode
Mode draws to obtain cathode electrode and anode electrode.
2. novel thin film solar cell according to claim 1, it is characterised in that：The surface counnter attack layer material therefor be
Light antireflective material.
3. the novel thin film solar cell according to any one of claim 1-2, it is characterised in that：The outermost reflector
Material therefor is specular reflective material, and its cross section of outermost reflector is triangle, and summit is less than the highest point of surface counnter attack layer,
Drift angle is less than 30 degree, for light to be reflexed into surface counnter attack layer.
4. novel thin film solar cell according to claim 3, it is characterised in that：The PN junction structure sheaf is by the first material
Layer, the arrangement of second material layer alternate cycle form, and first material layer, second material layer collectively constitute pyramid structure, pyramid
The drift angle of structure is less than or equal to 90 degree.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720733797.5U CN206921827U (en) | 2017-06-22 | 2017-06-22 | Novel thin film solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720733797.5U CN206921827U (en) | 2017-06-22 | 2017-06-22 | Novel thin film solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206921827U true CN206921827U (en) | 2018-01-23 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201720733797.5U Active CN206921827U (en) | 2017-06-22 | 2017-06-22 | Novel thin film solar cell |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111584530A (en) * | 2020-05-19 | 2020-08-25 | 上海集成电路研发中心有限公司 | Hybrid imaging detector structure |
-
2017
- 2017-06-22 CN CN201720733797.5U patent/CN206921827U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111584530A (en) * | 2020-05-19 | 2020-08-25 | 上海集成电路研发中心有限公司 | Hybrid imaging detector structure |
| CN111584530B (en) * | 2020-05-19 | 2023-09-05 | 上海集成电路研发中心有限公司 | Hybrid imaging detector structure |
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