CN107146819A - Novel thin film solar cell - Google Patents
Novel thin film solar cell Download PDFInfo
- Publication number
- CN107146819A CN107146819A CN201710482861.1A CN201710482861A CN107146819A CN 107146819 A CN107146819 A CN 107146819A CN 201710482861 A CN201710482861 A CN 201710482861A CN 107146819 A CN107146819 A CN 107146819A
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- China
- Prior art keywords
- electrode
- layer
- solar cell
- counnter attack
- thin film
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- 239000010409 thin film Substances 0.000 title claims abstract description 19
- 239000000463 material Substances 0.000 claims abstract description 38
- 230000000737 periodic effect Effects 0.000 claims abstract description 7
- 239000004411 aluminium Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 238000002513 implantation Methods 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 2
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims 14
- 229910004541 SiN Inorganic materials 0.000 claims 1
- VDGJOQCBCPGFFD-UHFFFAOYSA-N oxygen(2-) silicon(4+) titanium(4+) Chemical compound [Si+4].[O-2].[O-2].[Ti+4] VDGJOQCBCPGFFD-UHFFFAOYSA-N 0.000 claims 1
- 239000002344 surface layer Substances 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000013078 crystal Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B10/00—Integration of renewable energy sources in buildings
- Y02B10/10—Photovoltaic [PV]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a kind of novel thin film solar cell, including surface counnter attack layer, outermost reflector, PN junction structure sheaf, first electrode, second electrode, bottom surface selection reflecting layer, wherein, PN junction structure sheaf forms periodic pyramid structure, surface counnter attack layer is face coat, uniform fold is in the upper surface of PN junction structure sheaf, outermost reflector is arranged at the recess of surface counnter attack layer, first electrode, second electrode are alternately implanted to the inside of PN junction structure sheaf vertically, and the lower end of first electrode and second electrode is protruded from the bottom surface selection bottom surface of reflecting layer 7.In apparatus of the present invention, the incident sunshine in surface is largely directly absorbed, by pyramid apical sink after the surface-reflected layer reflection of another part, short wavelength's sunshine that bottom surface selection reflecting layer be able to can be absorbed with layer of reflective material, both the temperature of whole battery structure can be reduced, the pad pasting being also used as on the outdoor object window such as energy vehicle building or exterior wall is used, and is with a wide range of applications.
Description
Technical field
The present invention relates to solar cell, and in particular to a kind of thin film solar cell.
Background technology
Solar cell is that solar energy is converted directly into electric energy using the photovoltaic effect or photochemical effect of semiconductor
Device, have been commercialized solar cell including crystal silicon solar battery (including crystal silicon and polysilicon) and thin film solar cell (such as silicon substrate,
CIGS, cadmium telluride, nitride-based semiconductor etc.).Develop through last decade, the highest photoelectric transformation efficiency of crystal silicon battery has reached
25.6%, the photoelectric transformation efficiency of component 11% was promoted to present 20% or so before 10 years, and cost declines nearly ten times, but crystal silicon
The high-quality silicon chip that battery typically requires thicker is made, and its cost of electricity-generating can't generate electricity with traditional energy to be equal to；Copper and indium gallium
The highest conversion efficiency of selenium and cadmium-Te solar battery has reached 21.7% and 21.5% respectively, and this kind of battery uses high delustring system
Number, direct band gap light absorbent, greatly reduce cell thickness, unijunction and binode gallium arsenide solar cell highest conversion efficiency difference
28.8% and 30.8% are reached, but its manufacturing cost is high.It is to promote photovoltaic technology progress to improve photoelectric conversion efficiency of the solar battery
One of main target, it is to improve battery efficiency to make full use of solar spectrum and effectively improve the light capture rate of solar cell
One of effective means, therefore, it is essential that suitable light trapping structure is introduced in solar cell.For crystal silicon solar battery and
For thin film solar cell, the design of light trapping structure is all very important, especially under the development trend of battery thin membranization,
Light trapping structure just seems more important, and light trapping structure is applied in solar cell, light can be made repeatedly to lead in battery obsorbing layer
Cross, it is ensured that fully absorbing for incident light, improve absorptivity, so as to while battery physical thickness is further reduced, more can
Enough effectively improve the efficiency of light absorption of battery, but traditional sunken light design be all based on the incidence of light path in the vertical direction with
Reflection.On the other hand, gate electrode is distributed with solar battery surface, and it is also to improve having for battery efficiency to reduce gate electrode area as far as possible
One of effect means, but traditional structure can only as far as possible reduce but can not eliminate grid area sunshine is blocked.
The content of the invention
The purpose of the present invention is to design the novel thin film solar cell of a raising efficiency of light absorption.
The technical solution adopted by the present invention is：A kind of novel thin film solar cell, including surface counnter attack layer, surface reflection
Layer, PN junction structure sheaf, first electrode, second electrode, bottom surface selection reflecting layer, wherein, PN junction structure sheaf forms periodic gold
Word tower structure, counnter attack layer in surface is face coat, and uniform fold is arranged at table in the upper surface of PN junction structure sheaf, outermost reflector
The recess of face counnter attack layer, first electrode, second electrode are alternately implanted to the inside of PN junction structure sheaf, wherein first electrode vertically
Implantation depth be more than second electrode, the top of first electrode is close to pyramidal top, and the top of second electrode is close to surface
The lower end of the bottom in reflecting layer, first electrode and second electrode is protruded from the bottom surface selection bottom surface of reflecting layer 7, first electrode, second
The lower end of electrode is drawn by way of interdigital electrode obtains cathode electrode and anode electrode.
It is preferred that, the surface counnter attack layer is made of light antireflective material.
It is preferred that, the surface counnter attack layer is made of silica or magnesium fluoride.
It is preferred that, the outermost reflector is made of specular reflective material, and its cross section of outermost reflector is triangle,
Summit is less than the highest point of surface counnter attack layer, and drift angle is less than 30 degree, for light to be reflexed into surface counnter attack layer.
It is preferred that, the PN junction structure sheaf is formed by first material layer, the arrangement of second material layer alternate cycle, the first material
Layer, second material layer collectively constitute pyramid structure, and the drift angle of pyramid structure is less than or equal to 90 degree.
It is preferred that, the bottom surface selection reflecting layer uses argent, aluminium or SiN/ aluminium.
In apparatus of the present invention, the incident sunshine in surface is largely directly absorbed, and the surface-reflected layer of another part is anti-
By pyramid apical sink after penetrating so that surface falls into light efficiency close to 100%, and bottom surface selection reflecting layer both can be with layer of reflective material
The short wavelength's sunshine that can be absorbed, can also transmit long wavelength's sunshine or some visible light, can both reduce whole battery
The temperature of structure, the pad pasting being also used as on the outdoor object window such as energy vehicle building or exterior wall is used, and is had a wide range of applications
Prospect.
Brief description of the drawings
Fig. 1 is the side view of the novel thin film solar cell of the present invention.
Fig. 2 is the interdigitated electrode structure schematic diagram of the novel thin film solar cell of the present invention.
The specific embodiment of the invention is described further below in conjunction with the accompanying drawings.
Embodiment
Embodiment 1
A kind of novel thin film solar cell, including surface counnter attack layer 1, outermost reflector 2, first material layer 3, the second material
Layer 4, first electrode 5, second electrode 6, bottom surface selection reflecting layer 7, wherein, first material layer 3, second material layer 4 are in alternate
Periodic arrangement, first material layer 3 is that p-type Si, second material layer 4 are N-type Si, and both collectively constitute pyramid structure, its drift angle
Equal to 90 degree, surface counnter attack layer 1 is face coat, is made of silica, uniform fold is in the material of first material layer 3 and second
The upper surface of the bed of material 4, outermost reflector 2 is arranged at the recess of surface counnter attack layer 1, and outermost reflector 2 uses mirror-reflection material
Material is made, and its cross section of outermost reflector is triangle, and summit is less than the highest point of surface counnter attack layer, and drift angle is equal to 30 degree, use
In reflexing to light on surface counnter attack layer 1, first electrode 5, second electrode 6 are alternately implanted to first material layer 3, second vertically
The inside of material layer 4, the wherein implantation depth of first electrode 5 are more than second electrode 6, and the top of first electrode 5 is close to the first material
The pyramidal top that the bed of material 3, second material layer 4 are collectively constituted, the top of second electrode 6 close to the bottom of outermost reflector,
The lower end of first electrode 5 and second electrode 6 is protruded from the bottom surface selection bottom surface of reflecting layer 7, and first electrode, the lower end of second electrode lead to
The mode for crossing interdigital electrode is drawn and obtains cathode electrode and anode electrode.Bottom surface selection reflecting layer uses metallic silver into first
Material layer 3, the periodic arrangement width of second material layer 4 or so are 320nm；Whole solar battery structure thickness is 100um.
Embodiment 2
This novel thin film solar cell and the structure of embodiment 1 are basically identical, and difference is that pyramid structure drift angle is 70
Degree, outermost reflector drift angle is 20 degree, and first material layer 3, the periodic arrangement width of second material layer 4 or so are 100nm；Select bottom surface
Select reflecting layer to be made of metallic aluminium, whole solar battery structure thickness is 50nm.
Embodiment 3
This novel thin film solar cell and the structure of embodiment 1 are basically identical, and difference is that pyramid structure drift angle is 60
Degree, outermost reflector drift angle is 10 degree, and first material layer 3, the periodic arrangement width of second material layer 4 or so are 1000um；Entirely
Solar battery structure thickness is 500um.
Other structures can also be inserted in first material layer 3, second material layer 4 to form PN junction structure sheaf, for example, are inserted
Enter Si layers of i types.Bottom surface selection reflecting layer can also select SiN/ aluminium.
Claims (6)
1. a kind of novel thin film solar cell, including surface counnter attack layer, outermost reflector, PN junction structure sheaf, first electrode, second
Electrode, bottom surface selection reflecting layer, wherein, PN junction structure sheaf forms periodic pyramid structure, and counnter attack layer in surface applies for surface
Layer, uniform fold is in the upper surface of PN junction structure sheaf, and outermost reflector is arranged at the recess of surface counnter attack layer, first electrode,
Second electrode is alternately implanted to the inside of PN junction structure sheaf vertically, and the wherein implantation depth of first electrode is more than second electrode, the
The top of one electrode is close to pyramidal top, and the top of second electrode is close to the bottom of outermost reflector, first electrode and the
The lower end of two electrodes selects the bottom surface in reflecting layer to protrude from bottom surface, and first electrode, the lower end of second electrode pass through interdigital electrode
Mode, which is drawn, obtains cathode electrode and anode electrode.
2. novel thin film solar cell according to claim 1, it is characterised in that：The surface counnter attack layer is anti-reflection using light
Material is made.
3. novel thin film solar cell according to claim 2, it is characterised in that：The surface counnter attack layer uses titanium dioxide
Silicon or magnesium fluoride are made.
4. the novel thin film solar cell according to any one of claim 1-3, it is characterised in that：The outermost reflector
It is made of specular reflective material, its cross section of outermost reflector is triangle, and summit is less than the highest point of surface counnter attack layer, top
Angle is less than 30 degree, for light to be reflexed into surface counnter attack layer.
5. novel thin film solar cell according to claim 4, it is characterised in that：The PN junction structure sheaf is by the first material
Layer, the arrangement of second material layer alternate cycle are formed, and first material layer, second material layer collectively constitute pyramid structure, pyramid
The drift angle of structure is less than or equal to 90 degree.
6. novel thin film solar cell according to claim 4, it is characterised in that：The bottom surface selection reflecting layer is using gold
Category silver, aluminium or SiN/ aluminium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710482861.1A CN107146819B (en) | 2017-06-22 | 2017-06-22 | Novel thin film solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710482861.1A CN107146819B (en) | 2017-06-22 | 2017-06-22 | Novel thin film solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107146819A true CN107146819A (en) | 2017-09-08 |
| CN107146819B CN107146819B (en) | 2023-05-23 |
Family
ID=59781159
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710482861.1A Active CN107146819B (en) | 2017-06-22 | 2017-06-22 | Novel thin film solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107146819B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11652114B2 (en) | 2020-12-10 | 2023-05-16 | Coherent AI (Hong Kong) Limited | Optimal photon management for CMOS sensors |
| CN118380482A (en) * | 2024-06-24 | 2024-07-23 | 浙江爱旭太阳能科技有限公司 | Back contact solar cell, battery assembly and photovoltaic system |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002368244A (en) * | 2001-06-11 | 2002-12-20 | Abel Systems Inc | Solar cell |
| CN2593368Y (en) * | 2002-12-30 | 2003-12-17 | 南开大学 | Wide-range low-temperature laminated silicon based thin film solar cell |
| CN102945865A (en) * | 2012-11-23 | 2013-02-27 | 南开大学 | Conductive back reflection electrode based on pyramid texture degree morphology ZnO layer |
| US20130291934A1 (en) * | 2012-05-01 | 2013-11-07 | Chih-Hua Yang | Thin film solar cell structure |
| CN103489951A (en) * | 2013-09-05 | 2014-01-01 | 西南科技大学 | Efficient double-faced black crystalline silicon solar cell |
-
2017
- 2017-06-22 CN CN201710482861.1A patent/CN107146819B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002368244A (en) * | 2001-06-11 | 2002-12-20 | Abel Systems Inc | Solar cell |
| CN2593368Y (en) * | 2002-12-30 | 2003-12-17 | 南开大学 | Wide-range low-temperature laminated silicon based thin film solar cell |
| US20130291934A1 (en) * | 2012-05-01 | 2013-11-07 | Chih-Hua Yang | Thin film solar cell structure |
| CN102945865A (en) * | 2012-11-23 | 2013-02-27 | 南开大学 | Conductive back reflection electrode based on pyramid texture degree morphology ZnO layer |
| CN103489951A (en) * | 2013-09-05 | 2014-01-01 | 西南科技大学 | Efficient double-faced black crystalline silicon solar cell |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11652114B2 (en) | 2020-12-10 | 2023-05-16 | Coherent AI (Hong Kong) Limited | Optimal photon management for CMOS sensors |
| CN118380482A (en) * | 2024-06-24 | 2024-07-23 | 浙江爱旭太阳能科技有限公司 | Back contact solar cell, battery assembly and photovoltaic system |
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| Publication number | Publication date |
|---|---|
| CN107146819B (en) | 2023-05-23 |
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