CN111584530B - Hybrid imaging detector structure - Google Patents
Hybrid imaging detector structure Download PDFInfo
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- CN111584530B CN111584530B CN202010425137.7A CN202010425137A CN111584530B CN 111584530 B CN111584530 B CN 111584530B CN 202010425137 A CN202010425137 A CN 202010425137A CN 111584530 B CN111584530 B CN 111584530B
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- electrodes
- visible light
- imaging detector
- hybrid imaging
- substrate
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- 238000003384 imaging method Methods 0.000 title claims abstract description 18
- 239000004065 semiconductor Substances 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 238000007789 sealing Methods 0.000 claims abstract description 14
- 239000002184 metal Substances 0.000 claims abstract description 7
- 238000001514 detection method Methods 0.000 claims abstract description 6
- 230000004888 barrier function Effects 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 7
- 238000001914 filtration Methods 0.000 claims description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 2
- 230000004927 fusion Effects 0.000 abstract description 4
- 238000005036 potential barrier Methods 0.000 abstract 1
- 238000009461 vacuum packaging Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 3
- 238000013459 approach Methods 0.000 description 1
- 238000010801 machine learning Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
- H01L27/14669—Infrared imagers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a hybrid imaging detector structure, which comprises: the light is firstly incident on the visible light sensor, absorbed and filtered, and then further incident on the infrared sensor; the visible light sensor is of a sealing cover structure, and the infrared sensor is sealed on a substrate of a single chip in a vacuum mode. The invention utilizes the traditional CMOS-MEMS micro-bridge resonant cavity structure to perform mid-far infrared detection, and simultaneously uses the sealing cover with a pn junction or a metal semiconductor contact potential barrier device to realize vacuum packaging and visible light detection, thereby realizing single-chip image fusion of visible light and mid-far infrared images with low cost, high quality and no phase difference.
Description
Technical Field
The invention relates to the technical field of semiconductor integrated circuits and sensors, in particular to a hybrid imaging detector structure capable of detecting visible light and infrared light simultaneously.
Background
At present, the fusion of visible light and mid-far infrared images is one of the leading edge and hot spot research directions in the fields of image recognition, machine learning, AI and the like. However, almost all image fusion approaches are based on systems and/or algorithms, and thus it is difficult to eliminate the phase difference problem.
Disclosure of Invention
The present invention aims to overcome the above-mentioned drawbacks of the prior art and to provide a hybrid imaging detector structure.
In order to achieve the above purpose, the technical scheme of the invention is as follows:
a hybrid imaging detector structure comprising: the light is firstly incident on the visible light sensor, absorbed and filtered, and then further incident on the infrared sensor; the visible light sensor is of a sealing cover structure, and the infrared sensor is sealed on a substrate of a single chip in a vacuum mode.
Further, the visible light sensor is provided with a photosensitive part, the photosensitive part is provided with a pn junction in the horizontal direction, the pn junction forms the top surface of the sealing cover structure, electrodes are respectively arranged on the side surfaces of the p-type region and the n-type region of the pn junction, the electrodes are respectively in electric contact with the p-type region and the n-type region, and the electrodes are downwards connected with the substrate along the side wall of the sealing cover structure.
Further, the photosensitive part is provided with a plurality of pn junctions in parallel, and p-type regions or n-type regions of the pn junctions are oppositely arranged between the pn junctions to form the top surface of the sealing cover structure; the electrodes between all p-type regions or electrodes between n-type regions are respectively connected together, and are further connected to a circuit arranged on the substrate below through the side wall of the sealing cover structure.
Further, the electrodes between the p-type regions and the electrodes between the n-type regions are oppositely arranged in an intersecting manner to form a comb-shaped structure.
Further, the material of the cap structure comprises Si, ge or SiGe, and the pn junction forms a p-type region and an n-type region by employing different doping on the top surface of the cap structure.
Further, a window substrate material is arranged between the visible light sensor and the infrared sensor and used for filtering out visible light.
Further, the visible light sensor is a metal-semiconductor contact barrier device formed by metal-semiconductor contact.
Further, the visible light sensor is provided with a semiconductor part, the semiconductor part forms the top surface of the sealing cover structure, two side surfaces of the semiconductor part are respectively provided with electrodes, barrier contact and ohmic contact are respectively realized, and the electrodes are downwards connected with the substrate along the side wall of the sealing cover structure.
Further, the semiconductor parts are arranged in parallel and form a top surface of the cover structure, the same electrode is commonly arranged between the side surfaces of the semiconductor parts, each electrode forms alternating barrier contact type electrodes and ohmic contact type electrodes between the side surfaces of the semiconductor parts, all the barrier contact type electrodes and ohmic contact type electrodes are respectively connected together, and the barrier contact type electrodes and the ohmic contact type electrodes are further connected to a circuit arranged on the substrate below through the side wall of the cover structure.
Further, the infrared sensor is an infrared detection structure based on a micro-bridge resonant cavity.
According to the technical scheme, the traditional CMOS-MEMS micro-bridge resonant cavity structure is used for middle-far infrared detection, a pn junction or a metal semiconductor contact barrier device is used for forming a depletion region in a semiconductor, p-type and n-type are respectively connected together (or barrier contact ends and ohmic contact ends are respectively connected together), and the p-type and n-type are connected to a processing circuit through the side wall of a sealing cover structure. The electrodes are made of thin metal (horizontal) and their contact to the semiconductor is made in the semiconductor sidewalls. The visible light sensor forms a cover structure, and the infrared sensor is vacuum sealed into the cover. Thus, when the incident light reaches the visible light sensor, the visible light is absorbed, and the infrared light is projected onto the infrared sensor, so that the single-chip image fusion of the visible light and the middle-far infrared image with high performance, low cost and no phase difference is realized.
Drawings
FIG. 1 is a schematic diagram of a hybrid imaging detector according to a preferred embodiment of the invention.
Fig. 2 is a schematic diagram of a comb-like electrode according to a preferred embodiment of the invention.
Detailed Description
The following describes the embodiments of the present invention in further detail with reference to the accompanying drawings.
In the following detailed description of the embodiments of the present invention, the structures of the present invention are not drawn to a general scale, and the structures in the drawings are partially enlarged, deformed, and simplified, so that the present invention should not be construed as being limited thereto.
In the following detailed description of the invention, please refer to fig. 1, fig. 1 is a schematic diagram of a hybrid imaging detector according to a preferred embodiment of the invention. As shown in fig. 1, a hybrid imaging detector structure of the present invention includes: a visible light sensor 30 and an infrared sensor 20 stacked one above the other. Wherein the visible light sensor 30 is a capping structure, housing the infrared sensor 20 therein, and further vacuum-sealing the infrared sensor 20 on the single-chip substrate 10. When the hybrid imaging detector of the present invention is in operation, light is first incident on the visible light sensor 30 from above (in front of) the drawing, absorbed and filtered, and then further incident on the infrared sensor 20.
Please refer to fig. 1. The cover structure of the visible light sensor 30 is provided with a light receiving portion (n and p regions) 33 for absorbing visible light; the photosensitive portion 33 is located on the top surface of the capping structure.
The light-sensing portion 33 is provided with a pn junction arranged in the horizontal direction; the pn structure forms the top surface of the cap structure. Electrodes 32, 31 are provided on the sides of the p-type region (p) and the n-type region (n) of each pn junction, and electrical contact of the electrodes 32, 31 with said p-type region and n-type region, respectively, is made, the extensions 321, 311 of the electrodes 32, 31 being connected down the side walls of the cap structure to the substrate 10.
Please refer to fig. 1. As a preferred embodiment, the light-sensing portion 33 may be provided with a plurality of pn junctions in parallel. The photosensitive portion 33 is schematically shown to be provided with three pn junctions in parallel. The p-type region or the n-type region of each pn junction is arranged opposite to each other to form the top surface of the cover structure.
The same electrode 32, 31 is shared between the sides of the p-type region or the n-type region of any two adjacent pn junctions. For example, the first pn junction on the left side and the second pn junction in the middle are shown to be disposed opposite each other with respective p-type regions therebetween, and share one electrode 32; the second pn junction in the middle and the third pn junction on the right are shown to face each other with the respective n-type regions therebetween, and share the other electrode 31.
And the electrodes 32 between all the p-type regions are connected together and further connected to the circuitry provided on the underlying substrate 10 along one side wall (right side in the drawing) of the capping structure by an extension 321. At the same time, the electrodes 31 between all n-type regions are also connected together and further connected to circuitry provided on the underlying substrate 10 along the other side wall (left side in the drawing) of the capping structure by extension 311. The electrodes 32, 31 may be made of thin metal.
Please refer to fig. 2. As a preferred embodiment, the electrodes 32 between the p-type regions and the electrodes 31 between the n-type regions are disposed to be opposed to each other, and the electrodes 32 between all the p-type regions are connected together by the extension 321, and the electrodes 31 between all the n-type regions are connected together by the extension 311, thereby forming a comb-like structure.
Further, the material of the capping structure may include Si, ge, siGe, or the like. The pn junction forms a p-type region and an n-type region by using different doping modes on the top surface of the cap structure.
A window substrate material 34 may also be provided between the visible light sensor 30 and the infrared sensor 20 for filtering out visible light and transmitting only infrared light to the infrared sensor. Specifically, the window substrate material 34 may be disposed on a lower surface of the top surface of the capping structure, i.e., below the photosensitive portion 33.
Further, as other alternative embodiments, the visible light sensor 30 may employ a metal-semiconductor contact barrier device (MS contact barrier device) formed by metal-semiconductor contact. The visible light sensor 30 may be provided with a semiconductor portion constituting the top surface of the cover structure. The two sides of the semiconductor portion are provided with electrodes separately, and the two electrodes are respectively in barrier contact and ohmic contact with the two sides of the semiconductor portion, so that the two electrodes respectively constitute a barrier contact type electrode and an ohmic contact type electrode. Then, barrier contact type electrodes and ohmic contact type electrodes are respectively connected to the substrate 10 downward along one side wall of the cap structure.
Further, a plurality of semiconductor portions may be arranged in parallel and constitute the top surface of the capping structure. The same electrode is commonly provided between the side surfaces of the semiconductor portions, and the electrodes form alternating barrier contact type electrodes and ohmic contact type electrodes between the side surfaces of the semiconductor portions. All barrier contact electrodes and ohmic contact electrodes are connected together, respectively, and further connected to circuitry provided on the underlying substrate 10 along the sidewalls of the capping structure by extensions.
Please refer to fig. 1. Infrared sensor 20 may employ an infrared detection structure based on the form of a microbridge resonator. Specific structures thereof may include, for example: an infrared microbridge deck 23 provided on the substrate layer 21, the microbridge deck 23 being suspended above the substrate layer 21 by support and electrical connection holes 24; a resonant cavity 22 is arranged between the microbridge deck 23 and the substrate layer 21; the microbridge deck 23 is a multilayer structure including an electrode layer, an infrared sensitive layer, an insulating layer, and the like; wherein the electrode layer is connected to the substrate layer 21 through support and electrical connection holes 24 on both sides and further to the circuitry provided on the substrate 10 of the underlying single chip. Further knowledge about the infrared sensor 20 can be understood with reference to the prior art.
The foregoing description is only of the preferred embodiments of the present invention, and the embodiments are not intended to limit the scope of the invention, so that all the equivalent structural changes made in the description and drawings of the present invention are included in the scope of the invention.
Claims (8)
1. A hybrid imaging detector structure, comprising: the light is firstly incident on the visible light sensor, absorbed and filtered, and then further incident on the infrared sensor; the visible light sensor is of a sealing cover structure, and the infrared sensor is sealed on a substrate of a single chip in a vacuum way; the visible light sensor is provided with a photosensitive part, the photosensitive part is provided with a pn junction in the horizontal direction, the pn junction forms the top surface of the sealing cover structure, and the side surfaces of a p-type region and an n-type region of the pn junction are respectively provided with electrodes and respectively realize electric contact with the p-type region and the n-type region; the electrode is made of metal; the visible light sensor is a metal semiconductor contact barrier device formed by metal and semiconductor contact;
the photosensitive part is provided with a plurality of pn junctions in parallel, and p-type regions or n-type regions of the pn junctions are oppositely arranged between the pn junctions to form the top surface of the sealing cover structure; the electrodes between all the p-type regions or the electrodes between the n-type regions are respectively connected together; the electrodes between the p-type regions and the electrodes between the n-type regions are oppositely arranged in an intersecting manner to form a comb-shaped structure.
2. The hybrid imaging detector structure of claim 1, wherein the electrode is connected to the substrate down a sidewall of the capping structure.
3. The hybrid imaging detector structure of claim 2, wherein electrodes between all p-type regions or electrodes between n-type regions are connected together, respectively, and further connected to circuitry provided on the substrate below through sidewalls of the capping structure.
4. A hybrid imaging detector structure according to claim 2 or 3, wherein the material of the capping structure comprises Si, ge or SiGe, the pn junction forming a p-type region and an n-type region by employing different doping on the top surface of the capping structure.
5. The hybrid imaging detector structure of claim 1, wherein a window substrate material is disposed between the visible light sensor and the infrared sensor for filtering out visible light.
6. The hybrid imaging detector structure of claim 1, wherein the visible light sensor is provided with a semiconductor portion constituting a top surface of the capping structure, electrodes are separately provided on both side surfaces of the semiconductor portion and respectively realize barrier contact and ohmic contact, and the electrodes are connected to the substrate downward along a side wall of the capping structure.
7. The hybrid imaging detector structure of claim 6, wherein a plurality of said semiconductor portions are juxtaposed and form a top surface of said capping structure, and wherein each of said semiconductor portions shares a common electrode disposed between its sides, and wherein each of said electrodes forms alternating barrier contact and ohmic contact electrodes between said sides of said semiconductor portions, and wherein all of said barrier contact and ohmic contact electrodes are connected together, respectively, and further connected to circuitry disposed on said substrate thereunder through a sidewall of said capping structure.
8. The hybrid imaging detector structure of claim 1, wherein the infrared sensor is an infrared detection structure based on a microbridge resonator form.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010425137.7A CN111584530B (en) | 2020-05-19 | 2020-05-19 | Hybrid imaging detector structure |
| PCT/CN2021/094314 WO2021233278A1 (en) | 2020-05-19 | 2021-05-18 | Hybrid-imaging detector structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010425137.7A CN111584530B (en) | 2020-05-19 | 2020-05-19 | Hybrid imaging detector structure |
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| Publication Number | Publication Date |
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| CN111584530A CN111584530A (en) | 2020-08-25 |
| CN111584530B true CN111584530B (en) | 2023-09-05 |
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| CN202010425137.7A Active CN111584530B (en) | 2020-05-19 | 2020-05-19 | Hybrid imaging detector structure |
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| CN (1) | CN111584530B (en) |
| WO (1) | WO2021233278A1 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111584530B (en) * | 2020-05-19 | 2023-09-05 | 上海集成电路研发中心有限公司 | Hybrid imaging detector structure |
| CN113566980B (en) * | 2021-09-23 | 2021-12-28 | 西安中科立德红外科技有限公司 | Hybrid imaging detector |
| CN113551783B (en) * | 2021-09-23 | 2021-12-21 | 西安中科立德红外科技有限公司 | Hybrid imaging detector chip based on semiconductor integrated circuit process |
| CN113594193B (en) * | 2021-09-30 | 2022-01-25 | 西安中科立德红外科技有限公司 | Hybrid imaging detector chip based on semiconductor integrated circuit and preparation method |
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| CN101262001A (en) * | 2007-03-09 | 2008-09-10 | 东部高科股份有限公司 | Image sensor and method for manufacturing thereof |
| CN206921827U (en) * | 2017-06-22 | 2018-01-23 | 南京南大光电工程研究院有限公司 | Novel thin film solar cell |
| CN108369951A (en) * | 2015-12-15 | 2018-08-03 | 索尼公司 | The manufacturing method of imaging sensor, image capturing system and imaging sensor |
| CN111048617A (en) * | 2019-11-29 | 2020-04-21 | 武汉华星光电技术有限公司 | Photodiode and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| FR2844635B1 (en) * | 2002-09-16 | 2005-08-19 | Commissariat Energie Atomique | ELECTROMAGNETIC RADIATION DETECTOR DEVICE WITH INTEGRATED HOUSING COMPRISING TWO OVERLAY DETECTORS |
| GB2459647A (en) * | 2008-04-28 | 2009-11-04 | Sharp Kk | Photosensitive structure with a light shading layer |
| KR20100039171A (en) * | 2008-10-07 | 2010-04-15 | 삼성전자주식회사 | Visible-infrared fusion sensor and method therefor |
| TWI505455B (en) * | 2013-09-27 | 2015-10-21 | Maxchip Electronics Corp | Light sensor |
| CN105161507B (en) * | 2015-08-31 | 2018-05-29 | 上海集成电路研发中心有限公司 | Imaging detector pixel structure and preparation method thereof is mixed outside double-deck visible red |
| CN111584530B (en) * | 2020-05-19 | 2023-09-05 | 上海集成电路研发中心有限公司 | Hybrid imaging detector structure |
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2020
- 2020-05-19 CN CN202010425137.7A patent/CN111584530B/en active Active
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2021
- 2021-05-18 WO PCT/CN2021/094314 patent/WO2021233278A1/en active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101262001A (en) * | 2007-03-09 | 2008-09-10 | 东部高科股份有限公司 | Image sensor and method for manufacturing thereof |
| CN108369951A (en) * | 2015-12-15 | 2018-08-03 | 索尼公司 | The manufacturing method of imaging sensor, image capturing system and imaging sensor |
| CN206921827U (en) * | 2017-06-22 | 2018-01-23 | 南京南大光电工程研究院有限公司 | Novel thin film solar cell |
| CN111048617A (en) * | 2019-11-29 | 2020-04-21 | 武汉华星光电技术有限公司 | Photodiode and preparation method thereof |
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| Publication number | Publication date |
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| WO2021233278A1 (en) | 2021-11-25 |
| CN111584530A (en) | 2020-08-25 |
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