WO2021233278A1 - Hybrid-imaging detector structure - Google Patents

Hybrid-imaging detector structure Download PDF

Info

Publication number
WO2021233278A1
WO2021233278A1 PCT/CN2021/094314 CN2021094314W WO2021233278A1 WO 2021233278 A1 WO2021233278 A1 WO 2021233278A1 CN 2021094314 W CN2021094314 W CN 2021094314W WO 2021233278 A1 WO2021233278 A1 WO 2021233278A1
Authority
WO
WIPO (PCT)
Prior art keywords
electrodes
visible light
imaging detector
hybrid imaging
type region
Prior art date
Application number
PCT/CN2021/094314
Other languages
French (fr)
Chinese (zh)
Inventor
康晓旭
钟晓兰
Original Assignee
上海集成电路研发中心有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 上海集成电路研发中心有限公司 filed Critical 上海集成电路研发中心有限公司
Publication of WO2021233278A1 publication Critical patent/WO2021233278A1/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer
    • H01L27/14669—Infrared imagers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to the technical field of semiconductor integrated circuits and sensors, in particular to a hybrid imaging detector structure capable of simultaneously detecting visible light and infrared light.
  • the purpose of the present invention is to overcome the above-mentioned defects in the prior art and provide a hybrid imaging detector structure.
  • a hybrid imaging detector structure comprising: a visible light sensor and an infrared sensor stacked up and down, the light first enters the visible light sensor, and after being absorbed and filtered, it is further incident on the infrared sensor; wherein the visible light sensor is a cover structure , Vacuum-sealing the infrared sensor on a single-chip substrate.
  • the visible light sensor is provided with a photosensitive part
  • the photosensitive part is provided with a pn junction
  • the pn structure forms the top surface of the cover structure and is parallel to the surface of the substrate.
  • the side surfaces of the p-type region and the n-type region are separately provided with electrodes, and respectively realize electrical contact with the p-type region and the n-type region, and the electrodes are connected with the substrate downward along the sidewalls of the cover structure .
  • the material of the capping structure includes Si, Ge or SiGe, and the pn junction is formed by using different doping on the top surface of the capping structure to form a p-type region and an n-type region.
  • the photosensitive portion is provided with a plurality of the pn junctions in parallel, and the p-type or n-type regions of each of the pn junctions are arranged opposite to each other to form the top surface of the cover structure; wherein, any two The same electrode is shared between the p-type regions or n-type regions of adjacent pn junctions, and the electrodes between the p-type regions or the electrodes between the n-type regions are respectively connected to At the same time, it is further connected to the circuit provided on the substrate through the side wall of the cover structure.
  • the material of the capping structure includes Si, Ge or SiGe, and the pn junction is formed by using different doping on the top surface of the capping structure to form a p-type region and an n-type region.
  • the electrodes between each of the p-type regions and the electrodes between each of the n-type regions are arranged opposite to each other to form a comb-like structure.
  • the material of the capping structure includes Si, Ge or SiGe, and the pn junction is formed by using different doping on the top surface of the capping structure to form a p-type region and an n-type region.
  • a window substrate material layer is provided between the visible light sensor and the infrared sensor for filtering visible light.
  • the visible light sensor is a metal-semiconductor contact barrier device formed by contacting a metal with a semiconductor.
  • the visible light sensor is provided with a semiconductor part, the semiconductor part forms the top surface of the cover structure, two side surfaces of the semiconductor part are separately provided with electrodes, and the barrier contact and the ohmic contact are realized respectively.
  • the electrode is connected with the substrate downward along the side wall of the cover structure.
  • a plurality of said semiconductor parts are arranged side by side, and constitute the top surface of the cover structure, the same electrode is shared between the side faces of each adjacent semiconductor part, and each of the electrodes is arranged in the semiconductor part.
  • Alternating barrier contact electrodes and ohmic contact electrodes are formed between the side surfaces of the part, each of the barrier contact electrodes and each of the ohmic contact electrodes are connected together, and then further pass through the side of the cover structure
  • the wall is connected to a circuit provided with the substrate.
  • the infrared sensor is based on an infrared detection structure in the form of a micro-bridge resonant cavity.
  • the present invention uses the traditional CMOS-MEMS micro-bridge resonant cavity structure for mid- and far-infrared detection, uses pn junctions or metal semiconductor contact barrier devices to form the depletion region inside the semiconductor, and combines the p-type and The n-types are connected together (or the barrier contact terminals and the ohmic contact terminals are connected together respectively), and are connected to the processing circuit through the sidewall of the cover structure.
  • the electrode adopts thin metal (horizontal direction), which realizes contact with the semiconductor through the sidewall of the semiconductor.
  • the visible light sensor forms a cover structure, and the infrared sensor is vacuum sealed inside the cover.
  • the incident light reaches the visible light sensor, the visible light is absorbed and the infrared light is projected onto the infrared sensor, thereby realizing high-performance, low-cost, and non-phase difference single-chip image fusion of visible light and mid-to-far infrared images.
  • Fig. 1 is a schematic structural diagram of a hybrid imaging detector according to a preferred embodiment of the present invention.
  • Fig. 2 is a schematic diagram of a comb-shaped electrode structure according to a preferred embodiment of the present invention.
  • FIG. 1 is a schematic structural diagram of a hybrid imaging detector according to a preferred embodiment of the present invention.
  • a hybrid imaging detector structure of the present invention includes: a visible light sensor 30 and an infrared sensor 20 stacked one above the other.
  • the visible light sensor 30 is a cover structure, the infrared sensor 20 is covered therein, and the infrared sensor 20 is further vacuum-sealed on the single-chip substrate 10.
  • the hybrid imaging detector of the present invention When the hybrid imaging detector of the present invention is working, light is first incident on the visible light sensor 30 from above (front) as shown in the figure, and after being absorbed and filtered, it is further incident on the infrared sensor 20.
  • the cover structure of the visible light sensor 30 is provided with a photosensitive portion (n and p regions) 33 for absorbing visible light; the photosensitive portion 33 is located on the top surface of the cover structure.
  • the photosensitive portion 33 is provided with a pn junction which is parallel to the surface of the single chip substrate. As shown in the figure, the pn structure arranged in the horizontal direction forms the top surface of the capping structure. The sides of the p-type region (p) and the n-type region (n) of each pn junction are separately provided with electrodes 32, 31, and the electrodes 32, 31 are respectively electrically contacted with the corresponding p-type region and n-type region, The extension portions 321 and 311 of the electrodes 32 and 31 are connected to the substrate 10 along the sidewalls of the cover structure downward.
  • the photosensitive portion 33 may be provided with a plurality of pn junctions in parallel.
  • the p-type regions or n-type regions are adjacently arranged between each pn junction to form the top surface of the capping structure.
  • the same electrodes 32 and 31 are shared between the side surfaces of any two adjacent p-type regions or n-type regions of the pn junction.
  • the first pn junction on the left side of the figure and the second pn junction in the middle are arranged adjacent to each other with their respective p-type regions and share an electrode 32; the second pn junction in the middle of the figure and the second pn junction on the right
  • the three pn junctions are arranged adjacent to each other with respective n-type regions, and share another electrode 31.
  • the electrodes 32 between all the p-type regions are connected together, and are further connected to the circuit provided on the underlying substrate 10 along a side wall (right side in the figure) of the cover structure through the extension portion 321.
  • the electrodes 31 between all the n-type regions are also connected together, and are further connected to the circuit provided on the underlying substrate 10 along the other side wall (the left side of the figure) of the cover structure through the extension 311.
  • the electrodes 32 and 31 can be made of thin metal.
  • the electrodes 32 between the p-type regions and the electrodes 31 between the n-type regions are disposed opposite to each other, and the electrodes 32 between all the p-type regions are connected together by extensions 321, all The electrodes 31 between the n-type regions are connected together by extensions 311, thereby forming a comb-like structure.
  • the material of the capping structure may include Si, Ge, SiGe, or the like.
  • the pn junction adopts different doping methods on the top surface of the capping structure to form a p-type region and an n-type region.
  • a window substrate material layer 34 may also be provided between the visible light sensor 30 and the infrared sensor 20 to filter visible light and only transmit infrared light to the infrared sensor.
  • the window substrate material layer 34 can be provided on the lower surface of the top surface of the cover structure, that is, under the photosensitive portion 33.
  • the visible light sensor 30 may adopt a metal-semiconductor contact barrier device (MS contact barrier device) formed by contacting a metal with a semiconductor.
  • the visible light sensor 30 may be provided with a semiconductor part, and the semiconductor part constitutes the top surface of the cover structure.
  • the two side surfaces of the semiconductor part are separately provided with electrodes, and the two electrodes respectively achieve barrier contact and ohmic contact with the two side surfaces of the semiconductor part, so that the two electrodes constitute a barrier contact electrode and an ohmic contact electrode, respectively.
  • the barrier contact electrode and the ohmic contact electrode are respectively connected to the substrate 10 downwardly along one side wall of the cover structure.
  • a plurality of semiconductor parts can be arranged side by side, and constitute the top surface of the cover structure.
  • the same electrode is provided in common between the side surfaces of each semiconductor portion, and each electrode forms alternating barrier contact type electrodes and ohmic contact type electrodes between the side surfaces of the semiconductor portion.
  • Each of the barrier contact electrodes and each of the ohmic contact electrodes are respectively connected together, and further connected to the circuit provided on the underlying substrate 10 through the extension portion along the sidewall of the cover structure.
  • the infrared sensor 20 may adopt an infrared detection structure based on the form of a micro-bridge resonant cavity.
  • the specific structure may include, for example, an infrared micro-bridge deck 23 provided on the substrate layer 21, the micro-bridge deck 23 is suspended on the substrate layer 21 through the support and electrical connection holes 24; the micro-bridge deck 23 and the substrate layer 21 is provided with a resonant cavity 22; the micro-bridge 23 is a multi-layer structure, which includes an electrode layer, an infrared sensitive layer, an insulating layer, etc.; wherein the electrode layer is connected to the substrate layer through the support and electrical connection holes 24 on both sides 21, and further connected to the circuit provided on the substrate 10 of the single chip below. Further knowledge about the infrared sensor 20 can be understood with reference to the prior art.

Abstract

Disclosed in the present invention is a hybrid-imaging detector structure, comprising: a visible light sensor and an infrared sensor which are vertically stacked. Light is first incident to the visible light sensor, and then incident to the infrared sensor after absorption and filtering; the visible light sensor forms a cover structure to vacuum-seal the infrared sensor on a substrate of a single chip. According to the present invention, a conventional CMOS-MEMS microbridge resonator structure is used for mid- and far-infrared detection, and a cover having a pn junction or a metal semiconductor contact barrier device is used for implementing vacuum packaging and visible light detection, thereby implementing image fusion, by a single chip, of low-cost, high-quality, and phase-free visible light and mid- and far-infrared images.

Description

一种混合成像探测器结构Structure of hybrid imaging detector
交叉引用cross reference
本申请要求2020年5月19日提交的申请号为202010425137.7的中国专利申请的优先权。上述申请的内容以引用方式被包含于此。This application claims the priority of the Chinese patent application with the application number 202010425137.7 filed on May 19, 2020. The content of the above application is included here by reference.
技术领域Technical field
本发明涉及半导体集成电路和传感器技术领域，特别是涉及一种能够同时探测可见光和红外光的混合成像探测器结构。The invention relates to the technical field of semiconductor integrated circuits and sensors, in particular to a hybrid imaging detector structure capable of simultaneously detecting visible light and infrared light.
技术背景technical background
目前，可见光和中远红外图像融合，是图像识别、机器学习以及AI等领域的前沿和热点研究方向之一。然而，几乎所有的图像融合手段，都是基于系统和/或算法来实现的，因而难以消除存在相差的问题。At present, the fusion of visible light and mid-to-far infrared images is one of the frontier and hot research directions in the fields of image recognition, machine learning, and AI. However, almost all image fusion methods are implemented based on systems and/or algorithms, so it is difficult to eliminate the problem of differences.
发明概要Summary of the invention
本发明的目的在于克服现有技术存在的上述缺陷，提供一种混合成像探测器结构。The purpose of the present invention is to overcome the above-mentioned defects in the prior art and provide a hybrid imaging detector structure.
为实现上述目的，本发明的技术方案如下：In order to achieve the above objective, the technical solution of the present invention is as follows:
一种混合成像探测器结构，包括：上下叠设的可见光传感器和红外传感器，光线先入射至可见光传感器，经吸收及过滤后，再进一步入射至红外传感器；其中，所述可见光传感器为封盖结构，将所述红外传感器真空密封设于单芯片的衬底。A hybrid imaging detector structure, comprising: a visible light sensor and an infrared sensor stacked up and down, the light first enters the visible light sensor, and after being absorbed and filtered, it is further incident on the infrared sensor; wherein the visible light sensor is a cover structure , Vacuum-sealing the infrared sensor on a single-chip substrate.
进一步地，所述可见光传感器设有感光部，所述感光部设有pn结，所 述pn结构成所述封盖结构的顶面，且平行于所述衬底的表面，所述pn结的p型区和n型区的侧面分设有电极，并分别实现与所述p型区和n型区的电接触，所述电极沿所述封盖结构的侧壁向下与所述衬底相连。Further, the visible light sensor is provided with a photosensitive part, the photosensitive part is provided with a pn junction, and the pn structure forms the top surface of the cover structure and is parallel to the surface of the substrate. The side surfaces of the p-type region and the n-type region are separately provided with electrodes, and respectively realize electrical contact with the p-type region and the n-type region, and the electrodes are connected with the substrate downward along the sidewalls of the cover structure .
进一步地，所述封盖结构的材料包括Si、Ge或SiGe，所述pn结通过在所述封盖结构的顶面采用不同的掺杂形成p型区和n型区。Further, the material of the capping structure includes Si, Ge or SiGe, and the pn junction is formed by using different doping on the top surface of the capping structure to form a p-type region and an n-type region.
进一步地，所述感光部并列设有多个所述pn结，各所述pn结之间以其p型区或n型区相对设置构成所述封盖结构的顶面；其中，任意两个相邻的所述pn结的p型区或n型区的侧面之间共用设置的同一个电极，各所述p型区之间的电极或各所述n型区之间的电极分别连接在一起，再进一步通过所述封盖结构的侧壁连接至所述衬底设有的电路。Further, the photosensitive portion is provided with a plurality of the pn junctions in parallel, and the p-type or n-type regions of each of the pn junctions are arranged opposite to each other to form the top surface of the cover structure; wherein, any two The same electrode is shared between the p-type regions or n-type regions of adjacent pn junctions, and the electrodes between the p-type regions or the electrodes between the n-type regions are respectively connected to At the same time, it is further connected to the circuit provided on the substrate through the side wall of the cover structure.
进一步地，所述封盖结构的材料包括Si、Ge或SiGe，所述pn结通过在所述封盖结构的顶面采用不同的掺杂形成p型区和n型区。Further, the material of the capping structure includes Si, Ge or SiGe, and the pn junction is formed by using different doping on the top surface of the capping structure to form a p-type region and an n-type region.
进一步地，各所述p型区之间的电极与各所述n型区之间的电极相对交叉设置，形成梳状结构。Further, the electrodes between each of the p-type regions and the electrodes between each of the n-type regions are arranged opposite to each other to form a comb-like structure.
进一步地，所述封盖结构的材料包括Si、Ge或SiGe，所述pn结通过在所述封盖结构的顶面采用不同的掺杂形成p型区和n型区。Further, the material of the capping structure includes Si, Ge or SiGe, and the pn junction is formed by using different doping on the top surface of the capping structure to form a p-type region and an n-type region.
进一步地，所述可见光传感器与所述红外传感器之间设有窗口衬底材料层，用于过滤可见光。Further, a window substrate material layer is provided between the visible light sensor and the infrared sensor for filtering visible light.
进一步地，所述可见光传感器为通过金属与半导体接触形成的金属半导体接触势垒器件。Further, the visible light sensor is a metal-semiconductor contact barrier device formed by contacting a metal with a semiconductor.
进一步地，所述可见光传感器设有半导体部，所述半导体部构成所述封盖结构的顶面，所述半导体部的两个侧面分设有电极，并分别实现势垒接触 和欧姆接触，所述电极沿所述封盖结构的侧壁向下与所述衬底相连。Further, the visible light sensor is provided with a semiconductor part, the semiconductor part forms the top surface of the cover structure, two side surfaces of the semiconductor part are separately provided with electrodes, and the barrier contact and the ohmic contact are realized respectively. The electrode is connected with the substrate downward along the side wall of the cover structure.
进一步地，所述半导体部并列设置多个，并构成所述封盖结构的顶面，各相邻的所述半导体部的侧面之间共用设置的同一个电极，各所述电极在所述半导体部的侧面之间形成交替的势垒接触方式电极和欧姆接触方式电极，各所述势垒接触方式电极和各所述欧姆接触方式电极分别连接在一起，再进一步通过所述封盖结构的侧壁连接至所述衬底设有的电路。Further, a plurality of said semiconductor parts are arranged side by side, and constitute the top surface of the cover structure, the same electrode is shared between the side faces of each adjacent semiconductor part, and each of the electrodes is arranged in the semiconductor part. Alternating barrier contact electrodes and ohmic contact electrodes are formed between the side surfaces of the part, each of the barrier contact electrodes and each of the ohmic contact electrodes are connected together, and then further pass through the side of the cover structure The wall is connected to a circuit provided with the substrate.
进一步地，所述红外传感器是基于微桥谐振腔形式的红外探测结构。Further, the infrared sensor is based on an infrared detection structure in the form of a micro-bridge resonant cavity.
从上述技术方案可以看出，本发明利用传统CMOS-MEMS微桥谐振腔结构进行中远红外探测，使用pn结或金属半导体接触势垒器件，来形成半导体内部的耗尽区，并将p型和n型分别连接在一起(或者势垒接触端和欧姆接触端分别连接在一起)，并通过封盖结构侧壁连接到处理电路。电极采用薄金属(水平方向)，其通过半导体侧壁实现与半导体的接触。可见光传感器形成封盖结构，将红外传感器真空密封到封盖里面。这样当入射光到达可见光传感器后，可见光被吸收，红外光投射到红外传感器上，从而实现了高性能、低成本和无相差的可见光和中远红外图像的单芯片图像融合。It can be seen from the above technical solutions that the present invention uses the traditional CMOS-MEMS micro-bridge resonant cavity structure for mid- and far-infrared detection, uses pn junctions or metal semiconductor contact barrier devices to form the depletion region inside the semiconductor, and combines the p-type and The n-types are connected together (or the barrier contact terminals and the ohmic contact terminals are connected together respectively), and are connected to the processing circuit through the sidewall of the cover structure. The electrode adopts thin metal (horizontal direction), which realizes contact with the semiconductor through the sidewall of the semiconductor. The visible light sensor forms a cover structure, and the infrared sensor is vacuum sealed inside the cover. In this way, when the incident light reaches the visible light sensor, the visible light is absorbed and the infrared light is projected onto the infrared sensor, thereby realizing high-performance, low-cost, and non-phase difference single-chip image fusion of visible light and mid-to-far infrared images.
附图说明Description of the drawings
图1是本发明一较佳实施例的一种混合成像探测器结构示意图。Fig. 1 is a schematic structural diagram of a hybrid imaging detector according to a preferred embodiment of the present invention.
图2是本发明一较佳实施例的一种梳状电极结构示意图。Fig. 2 is a schematic diagram of a comb-shaped electrode structure according to a preferred embodiment of the present invention.
发明内容Summary of the invention
下面结合附图，对本发明的具体实施方式作进一步的详细说明。The specific embodiments of the present invention will be further described in detail below in conjunction with the accompanying drawings.
需要说明的是，在下述的具体实施方式中，在详述本发明的实施方式时，为了清楚地表示本发明的结构以便于说明，特对附图中的结构不依照一般比例绘图，并进行了局部放大、变形及简化处理，因此，应避免以此作为对本发明的限定来加以理解。It should be noted that in the following specific embodiments, when the embodiments of the present invention are described in detail, in order to clearly show the structure of the present invention for ease of description, the structure in the drawings is not drawn in accordance with the general scale. Partial enlargement, deformation, and simplification of processing have been implemented. Therefore, this should not be interpreted as a limitation of the present invention.
在以下本发明的具体实施方式中，请参考图1，图1是本发明一较佳实施例的一种混合成像探测器结构示意图。如图1所示，本发明的一种混合成像探测器结构，包括：上下叠设的可见光传感器30和红外传感器20。其中，可见光传感器30为封盖结构，将红外传感器20罩在其中，并进一步将红外传感器20真空密封在单芯片的衬底10。本发明的混合成像探测器工作时，光线从图示上方(前方)先入射至可见光传感器30，经吸收及过滤后，再进一步入射至红外传感器20。In the following specific embodiments of the present invention, please refer to FIG. 1, which is a schematic structural diagram of a hybrid imaging detector according to a preferred embodiment of the present invention. As shown in FIG. 1, a hybrid imaging detector structure of the present invention includes: a visible light sensor 30 and an infrared sensor 20 stacked one above the other. Among them, the visible light sensor 30 is a cover structure, the infrared sensor 20 is covered therein, and the infrared sensor 20 is further vacuum-sealed on the single-chip substrate 10. When the hybrid imaging detector of the present invention is working, light is first incident on the visible light sensor 30 from above (front) as shown in the figure, and after being absorbed and filtered, it is further incident on the infrared sensor 20.
请参考图1。可见光传感器30的封盖结构设有用于吸收可见光的感光部(n和p区域)33；感光部33位于封盖结构的顶面。Please refer to Figure 1. The cover structure of the visible light sensor 30 is provided with a photosensitive portion (n and p regions) 33 for absorbing visible light; the photosensitive portion 33 is located on the top surface of the cover structure.
感光部33设有pn结，所述pn结平行于所述单芯片的衬底的表面，如图所示，水平方向布置的pn结构成封盖结构的顶面。每个pn结的p型区(p)和n型区(n)的侧面分设有电极32、31，并分别实现电极32、31与对应的所述p型区和n型区的电接触，电极32、31的延伸部321、311沿封盖结构的侧壁向下与衬底10相连。The photosensitive portion 33 is provided with a pn junction which is parallel to the surface of the single chip substrate. As shown in the figure, the pn structure arranged in the horizontal direction forms the top surface of the capping structure. The sides of the p-type region (p) and the n-type region (n) of each pn junction are separately provided with electrodes 32, 31, and the electrodes 32, 31 are respectively electrically contacted with the corresponding p-type region and n-type region, The extension portions 321 and 311 of the electrodes 32 and 31 are connected to the substrate 10 along the sidewalls of the cover structure downward.
请参考图1。作为一优选的实施方式，感光部33可并列设有多个pn结。图中示意性显示感光部33并列设有三个pn结。各pn结之间以其p型区或n型区相邻设置构成封盖结构的顶面。Please refer to Figure 1. As a preferred embodiment, the photosensitive portion 33 may be provided with a plurality of pn junctions in parallel. The figure schematically shows that the photosensitive portion 33 is provided with three pn junctions in parallel. The p-type regions or n-type regions are adjacently arranged between each pn junction to form the top surface of the capping structure.
其中，任意两个相邻的pn结的p型区或n型区的侧面之间共用设置的 同一个电极32、31。例如，图示左侧第一个pn结与中间的第二个pn结之间以各自的p型区相邻设置，并共用一个电极32；图示中间的第二个pn结与右侧第三个pn结之间以各自的n型区相邻设置，并共用另一个电极31。Wherein, the same electrodes 32 and 31 are shared between the side surfaces of any two adjacent p-type regions or n-type regions of the pn junction. For example, the first pn junction on the left side of the figure and the second pn junction in the middle are arranged adjacent to each other with their respective p-type regions and share an electrode 32; the second pn junction in the middle of the figure and the second pn junction on the right The three pn junctions are arranged adjacent to each other with respective n-type regions, and share another electrode 31.
并且，所有p型区之间的电极32连接在一起，再进一步通过延伸部321沿封盖结构的一个侧壁(图示右侧)连接到下方衬底10设有的电路。同时，所有n型区之间的电极31也连接在一起，再进一步通过延伸部311沿封盖结构的另一个侧壁(图示左侧)连接到下方衬底10设有的电路。电极32、31可采用薄金属制作。In addition, the electrodes 32 between all the p-type regions are connected together, and are further connected to the circuit provided on the underlying substrate 10 along a side wall (right side in the figure) of the cover structure through the extension portion 321. At the same time, the electrodes 31 between all the n-type regions are also connected together, and are further connected to the circuit provided on the underlying substrate 10 along the other side wall (the left side of the figure) of the cover structure through the extension 311. The electrodes 32 and 31 can be made of thin metal.
请参考图2。作为一优选的实施方式，各p型区之间的电极32与各n型区之间的电极31相对交叉设置，并且，所有p型区之间的电极32通过延伸部321连接在一起，所有n型区之间的电极31通过延伸部311连接在一起，从而形成梳状结构。Please refer to Figure 2. As a preferred embodiment, the electrodes 32 between the p-type regions and the electrodes 31 between the n-type regions are disposed opposite to each other, and the electrodes 32 between all the p-type regions are connected together by extensions 321, all The electrodes 31 between the n-type regions are connected together by extensions 311, thereby forming a comb-like structure.
进一步地，封盖结构的材料可包括Si、Ge或SiGe等。pn结通过在封盖结构的顶面采用不同的掺杂方式，形成p型区和n型区。Further, the material of the capping structure may include Si, Ge, SiGe, or the like. The pn junction adopts different doping methods on the top surface of the capping structure to form a p-type region and an n-type region.
可见光传感器30与红外传感器20之间还可设有窗口衬底材料层34，用于过滤可见光，仅透过红外光至红外传感器。具体地，可将窗口衬底材料层34设于封盖结构顶面的下表面，即位于感光部33的下方。A window substrate material layer 34 may also be provided between the visible light sensor 30 and the infrared sensor 20 to filter visible light and only transmit infrared light to the infrared sensor. Specifically, the window substrate material layer 34 can be provided on the lower surface of the top surface of the cover structure, that is, under the photosensitive portion 33.
此外，作为其他可选的实施方式，可见光传感器30可以采用通过金属与半导体接触形成的金属半导体接触势垒器件(MS接触势垒器件)。可见光传感器30可设有半导体部，半导体部构成封盖结构的顶面。半导体部的两个侧面分设有电极，并且，两个电极分别与半导体部的两个侧面实现势垒接触和欧姆接触，从而两个电极分别构成了势垒接触方式电极和欧姆接触方式 电极。然后，势垒接触方式电极和欧姆接触方式电极分别沿封盖结构的一个侧壁向下与衬底10相连。In addition, as another optional embodiment, the visible light sensor 30 may adopt a metal-semiconductor contact barrier device (MS contact barrier device) formed by contacting a metal with a semiconductor. The visible light sensor 30 may be provided with a semiconductor part, and the semiconductor part constitutes the top surface of the cover structure. The two side surfaces of the semiconductor part are separately provided with electrodes, and the two electrodes respectively achieve barrier contact and ohmic contact with the two side surfaces of the semiconductor part, so that the two electrodes constitute a barrier contact electrode and an ohmic contact electrode, respectively. Then, the barrier contact electrode and the ohmic contact electrode are respectively connected to the substrate 10 downwardly along one side wall of the cover structure.
进一步地，半导体部可并列设置多个，并构成封盖结构的顶面。各半导体部的侧面之间共用设置的同一个电极，各电极在半导体部的侧面之间形成交替的势垒接触方式电极和欧姆接触方式电极。各所述势垒接触方式电极和各所述欧姆接触方式电极分别连接在一起，再进一步通过延伸部沿封盖结构的侧壁连接到下方衬底10设有的电路。Further, a plurality of semiconductor parts can be arranged side by side, and constitute the top surface of the cover structure. The same electrode is provided in common between the side surfaces of each semiconductor portion, and each electrode forms alternating barrier contact type electrodes and ohmic contact type electrodes between the side surfaces of the semiconductor portion. Each of the barrier contact electrodes and each of the ohmic contact electrodes are respectively connected together, and further connected to the circuit provided on the underlying substrate 10 through the extension portion along the sidewall of the cover structure.
请参考图1。红外传感器20可采用基于微桥谐振腔形式的红外探测结构。其具体结构例如可包括：设于衬底层21上的红外微桥桥面23，微桥桥面23通过支撑及电连接孔24悬设于衬底层21之上；微桥桥面23与衬底层21之间设有谐振腔22；微桥桥面23为多层结构，其包括电极层、红外敏感层和绝缘层等；其中，电极层通过两侧的支撑及电连接孔24连接至衬底层21，并进一步连接到下方单芯片的衬底10设有的电路。有关红外传感器20的进一步知识可参考现有技术加以理解。Please refer to Figure 1. The infrared sensor 20 may adopt an infrared detection structure based on the form of a micro-bridge resonant cavity. The specific structure may include, for example, an infrared micro-bridge deck 23 provided on the substrate layer 21, the micro-bridge deck 23 is suspended on the substrate layer 21 through the support and electrical connection holes 24; the micro-bridge deck 23 and the substrate layer 21 is provided with a resonant cavity 22; the micro-bridge 23 is a multi-layer structure, which includes an electrode layer, an infrared sensitive layer, an insulating layer, etc.; wherein the electrode layer is connected to the substrate layer through the support and electrical connection holes 24 on both sides 21, and further connected to the circuit provided on the substrate 10 of the single chip below. Further knowledge about the infrared sensor 20 can be understood with reference to the prior art.
以上的仅为本发明的优选实施例，实施例并非用以限制本发明的保护范围，因此凡是运用本发明的说明书及附图内容所作的等同结构变化，同理均应包含在本发明的保护范围内。The above are only preferred embodiments of the present invention, and the embodiments are not used to limit the scope of protection of the present invention. Therefore, any equivalent structural changes made using the contents of the description and drawings of the present invention should be included in the protection of the present invention. Within range.

Claims (12)

  1. 一种混合成像探测器结构，其特征在于，包括：上下叠设的可见光传感器和红外传感器，光线先入射至可见光传感器，经吸收及过滤后，再进一步入射至红外传感器；其中，所述可见光传感器为封盖结构，将所述红外传感器真空密封设于单芯片的衬底。A hybrid imaging detector structure, which is characterized in that it comprises: a visible light sensor and an infrared sensor stacked one above the other, the light first enters the visible light sensor, and after being absorbed and filtered, it is further incident on the infrared sensor; wherein the visible light sensor In order to cover the structure, the infrared sensor is vacuum-sealed and arranged on a single-chip substrate.
  2. 根据权利要求1所述的混合成像探测器结构，其特征在于，所述可见光传感器设有感光部，所述感光部设有pn结，所述pn结构成所述封盖结构的顶面，且平行于所述衬底的表面，所述pn结的p型区和n型区的侧面分设有电极，并分别实现与所述p型区和n型区的电接触，所述电极沿所述封盖结构的侧壁向下与所述衬底相连。The hybrid imaging detector structure according to claim 1, wherein the visible light sensor is provided with a photosensitive part, the photosensitive part is provided with a pn junction, and the pn structure forms the top surface of the cover structure, and Parallel to the surface of the substrate, the side surfaces of the p-type region and the n-type region of the pn junction are separately provided with electrodes, and respectively achieve electrical contact with the p-type region and the n-type region, and the electrodes are along the The side walls of the cover structure are connected downwardly with the substrate.
  3. 根据权利要求2所述的混合成像探测器结构，其特征在于，所述封盖结构的材料包括Si、Ge或SiGe，所述pn结通过在所述封盖结构的顶面采用不同的掺杂形成p型区和n型区。The hybrid imaging detector structure according to claim 2, wherein the material of the capping structure comprises Si, Ge or SiGe, and the pn junction adopts different doping on the top surface of the capping structure. A p-type region and an n-type region are formed.
  4. 根据权利要求2所述的混合成像探测器结构，其特征在于，所述感光部并列设有多个所述pn结，各所述pn结之间以其p型区或n型区相对设置构成所述封盖结构的顶面；其中，任意两个相邻的所述pn结的p型区或n型区的侧面之间共用设置的同一个电极，各所述p型区之间的电极或各所述n型区之间的电极分别连接在一起，再进一步通过所述封盖结构的侧壁连接至所述衬底设有的电路。The hybrid imaging detector structure of claim 2, wherein the photosensitive part is provided with a plurality of pn junctions in parallel, and each of the pn junctions is formed by opposing p-type regions or n-type regions. The top surface of the capping structure; wherein the same electrode is shared between the side surfaces of any two adjacent p-type regions or n-type regions of the pn junction, and the electrodes between the p-type regions Or the electrodes between the n-type regions are respectively connected together, and then further connected to the circuit provided on the substrate through the sidewall of the cover structure.
  5. 根据权利要求4所述的混合成像探测器结构，其特征在于，所述封盖结构的材料包括Si、Ge或SiGe，所述pn结通过在所述封盖结构的顶面采用不同的掺杂形成p型区和n型区。The hybrid imaging detector structure according to claim 4, wherein the material of the capping structure comprises Si, Ge or SiGe, and the pn junction adopts different doping on the top surface of the capping structure. A p-type region and an n-type region are formed.
  6. 根据权利要求4所述的混合成像探测器结构，其特征在于，各所述p型区之间的电极与各所述n型区之间的电极相对交叉设置，形成梳状结构。4. The hybrid imaging detector structure according to claim 4, wherein the electrodes between the p-type regions and the electrodes between the n-type regions are arranged opposite to each other to form a comb-like structure.
  7. 根据权利要求6所述的混合成像探测器结构，其特征在于，所述封盖 结构的材料包括Si、Ge或SiGe，所述pn结通过在所述封盖结构的顶面采用不同的掺杂形成p型区和n型区。The hybrid imaging detector structure according to claim 6, wherein the material of the capping structure comprises Si, Ge or SiGe, and the pn junction adopts different doping on the top surface of the capping structure. A p-type region and an n-type region are formed.
  8. 根据权利要求1所述的混合成像探测器结构，其特征在于，所述可见光传感器与所述红外传感器之间设有窗口衬底材料层，用于过滤可见光。The hybrid imaging detector structure according to claim 1, wherein a window substrate material layer is provided between the visible light sensor and the infrared sensor for filtering visible light.
  9. 根据权利要求1所述的混合成像探测器结构，其特征在于，所述可见光传感器为通过金属与半导体接触形成的金属半导体接触势垒器件。The hybrid imaging detector structure of claim 1, wherein the visible light sensor is a metal-semiconductor contact barrier device formed by contacting a metal with a semiconductor.
  10. 根据权利要求9所述的混合成像探测器结构，其特征在于，所述可见光传感器设有半导体部，所述半导体部构成所述封盖结构的顶面，所述半导体部的两个侧面分设有电极，并分别实现势垒接触和欧姆接触，所述电极沿所述封盖结构的侧壁向下与所述衬底相连。The hybrid imaging detector structure according to claim 9, wherein the visible light sensor is provided with a semiconductor part, the semiconductor part constitutes the top surface of the cover structure, and two side surfaces of the semiconductor part are separately provided Electrodes and realize barrier contact and ohmic contact respectively, and the electrodes are connected with the substrate downward along the sidewalls of the cover structure.
  11. 根据权利要求10所述的混合成像探测器结构，其特征在于，所述半导体部并列设置多个，并构成所述封盖结构的顶面，各相邻的所述半导体部的侧面之间共用设置的同一个电极，各所述电极在所述半导体部的侧面之间形成交替的势垒接触方式电极和欧姆接触方式电极，各所述势垒接触方式电极和各所述欧姆接触方式电极分别连接在一起，再进一步通过所述封盖结构的侧壁连接至所述衬底设有的电路。The hybrid imaging detector structure according to claim 10, wherein a plurality of said semiconductor parts are arranged side by side to form a top surface of said cover structure, and the side surfaces of each adjacent semiconductor part share the same The same electrode is provided, each of the electrodes forms alternate barrier contact electrodes and ohmic contact electrodes between the side surfaces of the semiconductor portion, each of the barrier contact electrodes and each of the ohmic contact electrodes, respectively Connected together, and further connected to the circuit provided on the substrate through the side wall of the cover structure.
  12. 根据权利要求1所述的混合成像探测器结构，其特征在于，所述红外传感器是基于微桥谐振腔形式的红外探测结构。The hybrid imaging detector structure of claim 1, wherein the infrared sensor is an infrared detection structure based on a micro-bridge resonant cavity.
PCT/CN2021/094314 2020-05-19 2021-05-18 Hybrid-imaging detector structure WO2021233278A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202010425137.7 2020-05-19
CN202010425137.7A CN111584530B (en) 2020-05-19 2020-05-19 Hybrid imaging detector structure

Publications (1)

Publication Number Publication Date
WO2021233278A1 true WO2021233278A1 (en) 2021-11-25

Family

ID=72126797

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2021/094314 WO2021233278A1 (en) 2020-05-19 2021-05-18 Hybrid-imaging detector structure

Country Status (2)

Country Link
CN (1) CN111584530B (en)
WO (1) WO2021233278A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111584530B (en) * 2020-05-19 2023-09-05 上海集成电路研发中心有限公司 Hybrid imaging detector structure
CN113566980B (en) * 2021-09-23 2021-12-28 西安中科立德红外科技有限公司 Hybrid imaging detector
CN113551783B (en) * 2021-09-23 2021-12-21 西安中科立德红外科技有限公司 Hybrid imaging detector chip based on semiconductor integrated circuit process
CN113594193B (en) * 2021-09-30 2022-01-25 西安中科立德红外科技有限公司 Hybrid imaging detector chip based on semiconductor integrated circuit and preparation method

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060043297A1 (en) * 2002-09-16 2006-03-02 Commissariat A L'energie Atomique Electromagnetic radiation detection device with integrated housing comprising two superposed detectors
CN101262001A (en) * 2007-03-09 2008-09-10 东部高科股份有限公司 Image sensor and method for manufacturing thereof
CN102007607A (en) * 2008-04-28 2011-04-06 夏普株式会社 Photosensitive structure and apparatus including such a structure
CN104517977A (en) * 2013-09-27 2015-04-15 钜晶电子股份有限公司 Light sensor
CN105161507A (en) * 2015-08-31 2015-12-16 上海集成电路研发中心有限公司 Pixel structure of dual-layer visible/infrared hybrid imaging detector and fabrication method of pixel structure
CN108369951A (en) * 2015-12-15 2018-08-03 索尼公司 The manufacturing method of imaging sensor, image capturing system and imaging sensor
CN110120398A (en) * 2018-02-05 2019-08-13 三星电子株式会社 Imaging sensor and electronic device
CN111584530A (en) * 2020-05-19 2020-08-25 上海集成电路研发中心有限公司 Hybrid imaging detector structure

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100039171A (en) * 2008-10-07 2010-04-15 삼성전자주식회사 Visible-infrared fusion sensor and method therefor
CN206921827U (en) * 2017-06-22 2018-01-23 南京南大光电工程研究院有限公司 Novel thin film solar cell
CN111048617B (en) * 2019-11-29 2021-06-01 武汉华星光电技术有限公司 Photodiode and preparation method thereof

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060043297A1 (en) * 2002-09-16 2006-03-02 Commissariat A L'energie Atomique Electromagnetic radiation detection device with integrated housing comprising two superposed detectors
CN101262001A (en) * 2007-03-09 2008-09-10 东部高科股份有限公司 Image sensor and method for manufacturing thereof
CN102007607A (en) * 2008-04-28 2011-04-06 夏普株式会社 Photosensitive structure and apparatus including such a structure
CN104517977A (en) * 2013-09-27 2015-04-15 钜晶电子股份有限公司 Light sensor
CN105161507A (en) * 2015-08-31 2015-12-16 上海集成电路研发中心有限公司 Pixel structure of dual-layer visible/infrared hybrid imaging detector and fabrication method of pixel structure
CN108369951A (en) * 2015-12-15 2018-08-03 索尼公司 The manufacturing method of imaging sensor, image capturing system and imaging sensor
CN110120398A (en) * 2018-02-05 2019-08-13 三星电子株式会社 Imaging sensor and electronic device
CN111584530A (en) * 2020-05-19 2020-08-25 上海集成电路研发中心有限公司 Hybrid imaging detector structure

Also Published As

Publication number Publication date
CN111584530A (en) 2020-08-25
CN111584530B (en) 2023-09-05

Similar Documents

Publication Publication Date Title
WO2021233278A1 (en) Hybrid-imaging detector structure
US7723686B2 (en) Image sensor for detecting wide spectrum and method of manufacturing the same
TWI482298B (en) Semiconductor photodetection element
US9064989B2 (en) Photo diode and method of forming the same
JP2014103657A (en) Image sensing device
KR20170019012A (en) Image sensor
CN111916513A (en) Infrared detector, infrared imager and preparation method of infrared detector
TW201801340A (en) Semiconductor light detection element
TWI750161B (en) Electro-optical sensor chip assembly and method for forming the same
US10816406B2 (en) Infrared detector pixel structure and manufactureing method thereof
WO2018054154A1 (en) Photodetector and photoelectric detection device
US20200161353A1 (en) Image sensor, manufacturing method thereof and imaging device
US11189740B2 (en) Photoelectric sensor and manufacturing method thereof
KR960001182B1 (en) Solid state image pick-up device
CN212571009U (en) Infrared detector and infrared imager
JP7038332B2 (en) Photodetector
TWI709236B (en) Semiconductor device having a light receiving element
CN107250738A (en) Infra-red ray detection device
US20240136380A1 (en) Active pixel sensor and method for fabricating an active pixel sensor
JPS62104163A (en) Photoelectric converter
US11674850B1 (en) Continuous full-resolution two-color infrared detector
CN105679783B (en) Imaging sensor and forming method thereof
EP4362098A1 (en) Active pixel sensor and method for fabricating an active pixel sensor
US9064986B2 (en) Photo diode and method of forming the same
JPH01220862A (en) Solid-state image sensing device

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 21808690

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 21808690

Country of ref document: EP

Kind code of ref document: A1