CN102593196A - Low-resistance buried-gate solar cell and manufacture method thereof - Google Patents
Low-resistance buried-gate solar cell and manufacture method thereof Download PDFInfo
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- CN102593196A CN102593196A CN2012100470648A CN201210047064A CN102593196A CN 102593196 A CN102593196 A CN 102593196A CN 2012100470648 A CN2012100470648 A CN 2012100470648A CN 201210047064 A CN201210047064 A CN 201210047064A CN 102593196 A CN102593196 A CN 102593196A
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- trapezoidal groove
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- trapezoidal
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- 238000000034 method Methods 0.000 title claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 238000005516 engineering process Methods 0.000 claims abstract description 7
- 238000007650 screen-printing Methods 0.000 claims abstract description 5
- 239000011267 electrode slurry Substances 0.000 claims abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- 239000010703 silicon Substances 0.000 abstract description 2
- 238000005245 sintering Methods 0.000 abstract 1
- 239000002002 slurry Substances 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 3
- 238000002679 ablation Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention relates to a low-resistance buried-gate solar cell and a manufacture method of the low-resistance buried-gate solar cell. The low-resistance buried-gate solar cell is provided with a front electrode on a light-receiving surface and is provided with a trapezoidal groove with an upper narrow part and a lower wide part on a position, where the front electrode needs to be arranged, of the light-receiving surface of the cell, wherein a trapezoidal buried-gate electrode is arranged in the trapezoidal groove. The manufacture method of the low-resistance buried-gate solar cell comprises the steps of: firstly, making the trapezoidal groove on a part where the trapezoidal buried-gate electrode needs to be formed through a laser grooving method; then injecting electrode slurry in the trapezoidal groove by using a screen printing technology; and finally, forming an electrode through sintering. The low-resistance buried-gate solar cell has the beneficial effects that the contact area of the electrode and silicon is increased by adopting the trapezoidal buried-gate electrode, the contradiction between the metal electrode contact area and the electrode shielding area is eliminated, and the front contact resistance of the battery can be effectively lowered, and the filling factor and the integral efficiency are improved.
Description
Technical field
The present invention relates to a kind of low resistance and bury grid formula solar cell and preparation method thereof.
Background technology
As shown in Figure 1, present screen printing technology is equivalent to directly metal is positioned over the front surface of solar cell.Because Ag is lighttight material, so be the equal of to be blocked for incident light in the zone that electrode exists.Though the semiconductor regions that is blocked is because the refraction and the diffraction effect of light are not can't carry out opto-electronic conversion fully, the occlusion effect of preceding electrode remains the more considerable part of loss in efficiency.So present technological improvement is generally all hoped the Ag slurry of as much is deposited in the as far as possible little scope, the depth-width ratio of electrode before just promoting; Can under the prerequisite that reduces shielded area, reduce the contact resistance between electrode and the semiconductor like this.Through using laser to form the depth-width ratio that groove structure can increase electrode to a certain extent, still thorough not enough at the position that needs are placed electrode.
Summary of the invention
Technical problem to be solved by this invention is: provide a kind of low resistance to bury grid formula solar cell and preparation method thereof, realize littler contact resistance between electrode and the solar cell, and can effectively reduce blocking of electrode pair incident light.
The technical solution adopted for the present invention to solve the technical problems is: a kind of low resistance is buried grid formula solar cell; Sensitive surface at battery is provided with preceding electrode; Up-narrow and down-wide trapezoidal groove is opened in the position of electrode before the sensitive surface of battery need be provided with, and in trapezoidal groove, makes trapezoidal buried gate electrode.
The manufacture method that this low resistance is buried grid formula solar cell is: at first make trapezoidal groove at the position that needs form trapezoidal buried gate electrode through the laser grooving method;
Use screen printing technology that electrode slurry is injected trapezoidal groove then;
Form electrode through oversintering at last.
Particularly; The method of producing trapezoidal groove through the laser grooving method is: through laser head with the vertical plane of fluting direction in wobbling action, make laser beam pass the intersection point of extended line of the side walls of trapezoidal groove, and in the angular range of extended line, swing simultaneously; Through the time of control ablation; On the sensitive surface of battery, etch trapezoidal groove,, trapezoidal groove is extended forward through the shift action of laser head along the fluting direction.
Particularly, laser head is that the circular arc in the center of circle is swung along the intersection point with the extended line of the side walls of trapezoidal groove.
The invention has the beneficial effects as follows: trapezoidal buried gate electrode has increased the contact area of electrode and silicon; Solved the contradiction between metal electrode contact area and the electrode shielded area simultaneously; The front contact resistance of battery be can effectively reduce, fill factor, curve factor and whole efficiency promoted.
Description of drawings
Below in conjunction with accompanying drawing and embodiment the present invention is further specified.
Fig. 1 is the structural representation of the at present more common preceding electrode of solar cell;
Fig. 2 is the structural representation of trapezoidal buried gate electrode of the present invention;
Fig. 3 is the process chart of this trapezoidal buried gate electrode of formation of the present invention;
Among the figure: 1. trapezoidal buried gate electrode, 2. battery, 3. trapezoidal groove, 4. laser head.
Embodiment
As shown in Figure 2, a kind of low resistance is buried grid formula solar cell, at the sensitive surface of battery 2 preceding electrode is set, and up-narrow and down-wide trapezoidal groove 3 is opened in the position of electrode before the sensitive surface of battery 2 need be provided with, and in trapezoidal groove 3, makes trapezoidal buried gate electrode 1.
As shown in Figure 3, the manufacture method that this low resistance is buried grid formula solar cell is: at first make trapezoidal groove 3 at the position that needs form trapezoidal buried gate electrode 1 through the laser grooving method;
Sensitive surface forms PN junction through diffusion technology, and PN junction also exists in trapezoidal groove 3;
Use screen printing technology that the Ag slurry is injected trapezoidal groove 3 then;
Print Al slurry and Ag-Al slurry at last overleaf, form electrode through oversintering;
The method of producing trapezoidal groove 3 through the laser grooving method is: through the wobbling action of laser head 4 in the plane vertical with the fluting direction; Particularly; Laser head 4 is that the circular arc in the center of circle is swung along the intersection point with the extended line of the side walls of trapezoidal groove 3, makes laser beam pass the intersection point of extended line of the side walls of trapezoidal groove 3, and in the angular range of extended line, swings simultaneously; Through the time of control ablation; On the sensitive surface of battery 2, etch trapezoidal groove 3,, trapezoidal groove 3 is extended forward through the shift action of laser head 4 along the fluting direction.
Claims (4)
1. a low resistance is buried grid formula solar cell; Sensitive surface at battery (2) is provided with preceding electrode; It is characterized in that: up-narrow and down-wide trapezoidal groove (3) is opened in the position of electrode before the sensitive surface of battery (2) need be provided with, and in trapezoidal groove (3), makes trapezoidal buried gate electrode (1).
2. manufacture method that the described low resistance of claim 1 is buried grid formula solar cell is characterized in that: at first make trapezoidal groove (3) at the position that needs form trapezoidal buried gate electrode (1) through the laser grooving method;
Use screen printing technology that electrode slurry is injected trapezoidal groove (3) then;
Form electrode through oversintering at last.
3. the described low resistance of claim 2 manufacture method of burying grid formula solar cell; It is characterized in that: the method for producing trapezoidal groove (3) through the laser grooving method is: through the wobbling action of laser head (4) in the plane vertical with the fluting direction; Make laser beam pass the intersection point of extended line of the side walls of trapezoidal groove (3); And in the angular range of extended line, swing simultaneously, the time through control is ablated, on the sensitive surface of battery (2), etch trapezoidal groove (3); Through the shift action of laser head (4), trapezoidal groove (3) is extended forward along the fluting direction.
4. the described low resistance of claim 3 manufacture method of burying grid formula solar cell is characterized in that: described laser head (4) is that the circular arc in the center of circle is swung along the intersection point with the extended line of the side walls of trapezoidal groove (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210047064.8A CN102593196B (en) | 2012-02-28 | 2012-02-28 | Low-resistance buried-gate solar cell and manufacture method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210047064.8A CN102593196B (en) | 2012-02-28 | 2012-02-28 | Low-resistance buried-gate solar cell and manufacture method thereof |
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| Publication Number | Publication Date |
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| CN102593196A true CN102593196A (en) | 2012-07-18 |
| CN102593196B CN102593196B (en) | 2014-06-18 |
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| CN201210047064.8A Active CN102593196B (en) | 2012-02-28 | 2012-02-28 | Low-resistance buried-gate solar cell and manufacture method thereof |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102820376A (en) * | 2012-08-16 | 2012-12-12 | 天津三安光电有限公司 | Preparation method of electrode of solar battery chip |
| CN103151257A (en) * | 2013-03-14 | 2013-06-12 | 上海华力微电子有限公司 | Method for manufacturing sigma-shaped silicon grooves |
| CN105552146A (en) * | 2016-02-24 | 2016-05-04 | 晶科能源有限公司 | Crystal silicon battery and fabrication method thereof |
| CN106057922A (en) * | 2016-07-22 | 2016-10-26 | 李会欣 | Hide grid line photovoltaic battery pack, hide grid line printing pattern and photovoltaic light shift system |
| CN106129175A (en) * | 2016-07-12 | 2016-11-16 | 李会欣 | The preparation method of photovoltaic cell |
| CN106158995A (en) * | 2016-08-31 | 2016-11-23 | 李会欣 | Hide grid photovoltaic cell component, processing method and photovoltaic system |
| CN108269865A (en) * | 2018-03-06 | 2018-07-10 | 南京日托光伏科技股份有限公司 | A kind of MWT preparation method of solar battery of low cost, ultra-fine grid line |
| CN108447922A (en) * | 2018-04-27 | 2018-08-24 | 苏州浩顺光伏材料有限公司 | A kind of solar battery sheet that conversion ratio is high |
| CN109037368A (en) * | 2018-08-21 | 2018-12-18 | 北京铂阳顶荣光伏科技有限公司 | Solar cell module and electrode lead-out method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0757988A (en) * | 1993-08-11 | 1995-03-03 | Mitsubishi Heavy Ind Ltd | Line image pattern writing method |
| CN1911588A (en) * | 2005-08-12 | 2007-02-14 | 北京国科世纪激光技术有限公司 | Method and device for grooving on silicon photoelectric battery surface |
| CN102082199A (en) * | 2010-11-19 | 2011-06-01 | 山东力诺太阳能电力股份有限公司 | Groove notching and grid burying method for crystalline silicon solar cell |
-
2012
- 2012-02-28 CN CN201210047064.8A patent/CN102593196B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0757988A (en) * | 1993-08-11 | 1995-03-03 | Mitsubishi Heavy Ind Ltd | Line image pattern writing method |
| CN1911588A (en) * | 2005-08-12 | 2007-02-14 | 北京国科世纪激光技术有限公司 | Method and device for grooving on silicon photoelectric battery surface |
| CN102082199A (en) * | 2010-11-19 | 2011-06-01 | 山东力诺太阳能电力股份有限公司 | Groove notching and grid burying method for crystalline silicon solar cell |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102820376A (en) * | 2012-08-16 | 2012-12-12 | 天津三安光电有限公司 | Preparation method of electrode of solar battery chip |
| CN103151257A (en) * | 2013-03-14 | 2013-06-12 | 上海华力微电子有限公司 | Method for manufacturing sigma-shaped silicon grooves |
| CN105552146A (en) * | 2016-02-24 | 2016-05-04 | 晶科能源有限公司 | Crystal silicon battery and fabrication method thereof |
| CN106129175A (en) * | 2016-07-12 | 2016-11-16 | 李会欣 | The preparation method of photovoltaic cell |
| CN106057922A (en) * | 2016-07-22 | 2016-10-26 | 李会欣 | Hide grid line photovoltaic battery pack, hide grid line printing pattern and photovoltaic light shift system |
| CN106158995A (en) * | 2016-08-31 | 2016-11-23 | 李会欣 | Hide grid photovoltaic cell component, processing method and photovoltaic system |
| CN108269865A (en) * | 2018-03-06 | 2018-07-10 | 南京日托光伏科技股份有限公司 | A kind of MWT preparation method of solar battery of low cost, ultra-fine grid line |
| CN108447922A (en) * | 2018-04-27 | 2018-08-24 | 苏州浩顺光伏材料有限公司 | A kind of solar battery sheet that conversion ratio is high |
| CN109037368A (en) * | 2018-08-21 | 2018-12-18 | 北京铂阳顶荣光伏科技有限公司 | Solar cell module and electrode lead-out method |
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| Publication number | Publication date |
|---|---|
| CN102593196B (en) | 2014-06-18 |
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Address after: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee after: trina solar Ltd. Address before: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. Address after: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee after: TRINASOLAR Co.,Ltd. Address before: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee before: trina solar Ltd. |
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