CN106158995A - Hide grid photovoltaic cell component, processing method and photovoltaic system - Google Patents

Abstract

The invention discloses a hidden grid photovoltaic cell assembly, a processing method and a photovoltaic system. The hidden grid photovoltaic cell assembly includes a crystalline silicon substrate, a conductive diffusion layer arranged on the upper surface of the crystalline silicon substrate, and a conductive diffusion layer arranged under the crystalline silicon substrate. The surface has a conductive back electrode layer, wherein a plurality of grid lines are embedded below the surface of the diffusion layer, the photovoltaic system includes an optical phase shifter and the hidden grid photovoltaic cell assembly, and the optical phase shifter is arranged on The oblique upper part of the hidden grid photovoltaic cell assembly. The hidden grid photovoltaic cell assembly, processing method and photovoltaic system of the present invention can hide the grid lines below the surface of the photovoltaic cells, so that there is no grid line on the surface of the photovoltaic cells to block sunlight, increasing the light-receiving area of the photovoltaic cells, and improving the photoelectricity of the photovoltaic cells. conversion efficiency.

Description

Tibetan grid photovoltaic cell assembly, processing method and photovoltaic system

technical field

The invention relates to the field of photovoltaic technology, in particular to a hidden grid photovoltaic cell assembly, a processing method and a photovoltaic system.

Background technique

The energy problem has become a global problem. The chemical energy and nuclear energy we use now are not clean energy. At the same time, the existing exploitable energy can no longer maintain the sustainable development of human beings. Making full use of solar energy has become an inevitable trend. Humans have developed many technologies to utilize solar energy, and the technology is mature and has been used for power generation mainly silicon-based photovoltaic solar modules (hereinafter referred to as photovoltaic modules), solar energy is clean and environmentally friendly, but the photoelectric conversion efficiency of the photovoltaic modules is too low and the cost is too high , which hampers its development in many ways.

In order to increase the power generation of the photovoltaic module, people have made unremitting efforts and made countless attempts for half a century, but there has been no substantial progress, and the conversion rate is always below 17%-22%. However, the price of the photovoltaic module is very high. Now the price of photovoltaic power is above RMB 0.9 per watt. Improving the conversion efficiency of photovoltaic components and reducing the price of photovoltaic components are the problems to be solved by the inventors.

As shown in Figure 1, silicon-based photovoltaic cells in the prior art include a conductive diffusion layer 1', a crystalline silicon substrate 2' and a back electrode layer 3' from top to bottom, wherein the upper surface of the diffusion layer 1' is set There is a grid line layer, and the grid line layer includes a plurality of grid lines 4' arranged in parallel, uniformly and at intervals. When the silicon-based photovoltaic cell is working, the sunlight is directly incident from the grid line layer, and passes through the multiple grid lines 4' and diffuses Layer 1' reaches the crystalline silicon substrate 2' and the back electrode layer 3', and the diffusion layer 1' contacts the crystalline silicon substrate 2' to form a P-N junction area, and the P-N junction area generates multiple electron-hole pairs under the excitation of sunlight, Electron-hole pairs are separated under the action of electrostatic potential energy and move to the back electrode layer 3' and the grid line layer respectively. When the grid line layer and the back electrode layer 3' are connected by wires, power can be supplied to electrical equipment.

Since the grid line layer in the prior art is arranged on the upper surface of the diffusion layer 1', when sunlight irradiates the upper surface of the silicon-based photovoltaic cell, part of the sunlight will be blocked by the grid line layer, resulting in irradiation from the upper surface of the diffusion layer 1'. The reduction of incoming photons leads to the reduction of electron-hole pairs excited by the P-N junction region, which makes the photoelectric conversion efficiency not high, and if the setting of the gate line 4' is reduced, the pair of photogenerated electrons with a lifetime of only 10 nanoseconds will not be correct. The photoelectric conversion efficiency of silicon-based photovoltaic cells is reduced due to effective absorption. The widespread application of silicon-based photovoltaic cells is limited. However, existing silicon-based photovoltaic cells must have grid lines to collect electrons in order to transport the electricity converted from sunlight, and the grid lines 4' are arranged on the upper surface of the diffusion layer 1' to block sunlight, resulting in a waste of sunlight illuminance.

Contents of the invention

The object of the present invention is to provide a hidden grid photovoltaic cell assembly, processing method and photovoltaic system, which can hide the grid lines below the surface of the photovoltaic cells, so that there is no grid line on the surface of the photovoltaic cells to block sunlight, and the light receiving capacity of the photovoltaic cells is increased. The area improves the photoelectric conversion efficiency of photovoltaic cells.

In order to achieve the above object, the present invention provides a hidden grid photovoltaic cell assembly, comprising a crystalline silicon substrate, a conductive diffusion layer disposed on the upper surface of the crystalline silicon substrate, and a conductive back electrode layer disposed on the lower surface of the crystalline silicon substrate , wherein a plurality of gate lines are embedded below the surface of the diffusion layer.

Preferably, the upper surface of the diffusion layer is provided with a plurality of first hidden gate grooves extending inside the crystalline silicon substrate and inclined to the upper surface of the crystalline silicon substrate, the upper surface of the crystalline silicon substrate and each first hidden gate groove The above-mentioned diffusion layer is arranged inside, and each of the above-mentioned grid lines is hidden in the groove bottom of each of the first hidden grid grooves.

Preferably, at least one main grid line buried below the surface of the diffusion layer is also included.

Preferably, the upper surface of the diffusion layer is provided with at least one second hidden gate groove extending inside the crystalline silicon substrate and inclined to the upper surface of the crystalline silicon substrate, and the second hidden gate groove is provided with a diffusion layer, each The busbar lines are hidden in the groove bottoms of the second hidden grid grooves respectively.

Preferably, the sharp corners of the opening ends of the first hidden grid groove and the second hidden grid groove are all subjected to chamfering and passivation treatment.

Preferably, the upper and lower surfaces of the crystalline silicon substrate are both textured and passivated.

Preferably, the lower surface of the back electrode layer is provided with a reflective layer.

A processing method according to the hidden grid photovoltaic cell assembly, which includes the following steps:

(1) Passivate the upper and lower surfaces of the crystalline silicon substrate to form a double textured surface;

(2) Fabricate a plurality of first hidden gate grooves on the upper surface of the crystalline silicon substrate obtained in step (1), so that the first hidden gate grooves are all inclined relative to the upper surface of the crystalline silicon substrate, and each of the first hidden gate grooves The sharp corners of the opening end of a Tibetan grid groove are all chamfered and passivated;

(3) performing a diffusion coating process on the inner wall of the crystalline silicon substrate and the first storage grid grooves with a conductive material, so that the first storage grid grooves of the crystalline silicon substrate obtained in step (2) are fully diffused layer to form a comprehensive and continuous photovoltaic cell PN junction, and conduct a coating process on the lower surface of the crystalline silicon substrate with a conductive material to form a back electrode layer, thereby making a hidden grid photovoltaic cell module.

Preferably, the step (2) further includes making at least one second hidden gate groove on the upper surface of the prepared crystalline silicon substrate, so that the second hidden gate groove is inclined relative to the upper surface of the crystalline silicon substrate, and the The sharp corners of the opening ends of the second grid slots are chamfered and passivated. In the step (3), a diffusion coating process is added to the inner wall of the second grid slots, so that each of the first grid slots 1. A diffusion layer is fully obtained in the second storage grid groove.

A photovoltaic system, which includes an optical phase shifting plate and the hidden grid photovoltaic cell assembly, and the optical phase shifting plate is arranged obliquely above the hidden grid photovoltaic cell assembly.

After adopting the above scheme, the hidden grid photovoltaic cell assembly, processing method and photovoltaic system of the present invention have the following beneficial effects:

1. By concealing the grid lines or grid lines and main grid lines below the surface of the diffusion layer, there is no grid line or grid lines and main grid lines on the surface of hidden grid photovoltaic cell components to block sunlight, which increases the light receiving capacity of the battery components The area improves the photoelectric conversion efficiency of the battery module;

2. By cutting off the sharp corners of the opening end of the first grid slot or the sharp corners of the opening ends of the first grid slot and the second grid slot, these opening ends are chamfered and passivated, so that there are no sharp corners It can generate more photogenerated carriers and improve the photoelectric conversion efficiency;

3. For the sunlight in the red light area, the Tibetan grid photovoltaic cell module is transparent. The upper and lower surfaces of the crystalline silicon substrate are designed to be textured and passivated to ensure that as much light as possible enters the crystalline silicon substrate. , and by setting a reflective layer on the lower surface of the back electrode layer, the sunlight escaping through the crystalline silicon substrate can be reflected back to avoid the waste of sunlight;

4. The processing method of the hidden grid photovoltaic cell assembly of the present invention does not brush and sinter the grid lines or the grid lines and the main grid lines on the upper surface of the diffusion layer, but by setting the first hidden grid groove or the first hidden grid groove and the second The hidden grid groove makes the grid lines or grid lines and busbars hidden under the surface of the diffusion layer respectively, thus avoiding the shielding of sunlight caused by the grid lines or grid lines and busbars being arranged on the surface of the photovoltaic cell module. Ordinary photovoltaic cells increase the area illuminated by sunlight on photovoltaic cells. On the other hand, the laying ratio of grid lines can be increased, so that more photogenerated currents can be captured by grid lines before recombination, and the photoelectric conversion efficiency of photovoltaic cell modules can be further improved. It has been improved, and its processing method is simple and ingenious;

5. The photovoltaic system of the present invention combines the optical phase shifting plate with the hidden grid photovoltaic cell assembly, which increases the illuminated area of the hidden grid photovoltaic cell assembly, thereby increasing the photoelectric conversion efficiency, and at the same time the optical phase shifting plate converts the other Adding twice the sunlight to the photovoltaic cell components of the Tibetan grid greatly increases the power generation of the photovoltaic system, reduces its cost, and improves the utilization rate and photoelectric conversion efficiency of photovoltaic materials.

Description of drawings

Fig. 1 is the structural representation of existing silicon-based photovoltaic cell;

Fig. 2 is a structural schematic diagram of Embodiment 1 of the hidden grid photovoltaic cell assembly of the present invention;

Fig. 3 is a structural schematic diagram of Embodiment 2 of the hidden grid photovoltaic cell assembly of the present invention;

Fig. 4 is a structural schematic diagram of Embodiment 3 of the hidden grid photovoltaic cell assembly of the present invention;

Fig. 5 is a schematic structural diagram of Embodiment 4 of the hidden grid photovoltaic cell assembly of the present invention;

Fig. 6 is a schematic structural diagram of Embodiment 1 of the photovoltaic system of the present invention.

detailed description

The present invention will be further described below in conjunction with the accompanying drawings.

As shown in Figure 2, a structural schematic diagram of Embodiment 1 of the hidden grid photovoltaic cell assembly of the present invention includes a crystalline silicon substrate 1, a diffusion layer 2 arranged on the upper surface of the crystalline silicon substrate 1 made of a conductive material, and a diffusion layer 2 arranged on the crystalline silicon substrate 1. The back electrode layer 3 whose lower surface is made of conductive material, and the upper surface of the diffusion layer 2 are provided with a plurality of first hidden gate grooves 4 extending inside the crystalline silicon substrate 1 and inclined to the upper surface of the crystalline silicon substrate 1. A hidden grid groove 4 can be linear or arc-shaped or L-shaped or circular. In this embodiment, the first hidden grid groove 4 is linear. A plurality of first hidden grid grooves 4 are arranged in parallel, uniformly and at intervals. Diffusion layers 2 are provided on the upper surface of the crystalline silicon substrate 1 and in each of the first hidden gate grooves 4 , and the gate lines 5 are made of conductive materials, and the melting point of the conductive materials is higher than that of silicon. Each grid line 5 is installed on the groove bottom of each first hidden grid groove 4 respectively. The groove bottom of the first hidden grid groove 4 in this embodiment matches the shape of each corresponding grid line 5 .

In this embodiment, the first hidden gate groove 4 can also be directly opened in the diffusion layer 2 without extending to the crystalline silicon substrate 1. Similarly, the first hidden gate groove 4 is set as a groove inclined to the upper surface of the crystalline silicon substrate 1. Be the protection scope of the present invention.

During use, a plurality of grid lines 5 are respectively installed on the groove bottoms of the first hidden grid grooves 4 which are arranged obliquely. Blocking the sunlight increases the light-receiving area of the photovoltaic cell assembly and improves the photoelectric conversion efficiency of the photovoltaic cell assembly.

As shown in Figure 3, the structure schematic diagram of Embodiment 2 of the hidden grid photovoltaic cell assembly of the present invention includes a crystalline silicon substrate 1, a diffusion layer 2 arranged on the upper surface of the crystalline silicon substrate 1 made of conductive material, and a diffusion layer 2 arranged on the crystalline silicon substrate 1. The lower surface is made of a back electrode layer 3 made of conductive material, and the upper and lower surfaces of the crystalline silicon substrate 1 are passivated by texturing to form a double textured surface. The upper surface of the diffusion layer 2 is provided with a plurality of first hidden gate grooves 4 extending inside the crystalline silicon substrate 1 and inclined to the upper surface of the crystalline silicon substrate 1. The first hidden gate grooves 4 can be linear or arc-shaped or L-shaped or circular, the first hidden grid groove 4 in this embodiment is linear. A plurality of first hidden grid grooves 4 are arranged in parallel, uniformly and at intervals. The sharp corners of the opening ends of each first grid slot 4 are chamfered and passivated, that is, the sharp corners are cut off. Thin gate lines 5 are buried in each of the first grid recesses 4 . Diffusion layers 2 are provided on the upper surface of the crystalline silicon substrate 1 and in each of the first hidden gate grooves 4 , and the gate lines 5 are made of conductive materials, and the melting point of the conductive materials is higher than that of silicon. Each grid line 5 is installed on the groove bottom of each first hidden grid groove 4 respectively. The groove bottom of the first hidden grid groove 4 in this embodiment matches the shape of each corresponding grid line 5 .

During use, a plurality of grid lines 5 are respectively installed on the groove bottoms of the first hidden grid grooves 4 which are arranged obliquely. Blocking the sunlight increases the light-receiving area of the photovoltaic cell assembly and improves the photoelectric conversion efficiency of the photovoltaic cell assembly. And by chamfering and passivating the sharp corner of the opening end of the first grid storage groove 4 , the tip of the first grid storage groove 4 is cut off. This way the tip becomes a thicker shape. More photogenerated carriers can be generated, which further improves the photoelectric conversion efficiency, and the upper and lower surfaces of the crystalline silicon substrate 1 are textured and passivated to ensure that as much light as possible is injected into the crystalline silicon substrate 1, Improve photoelectric conversion efficiency.

As shown in Figure 4, the structure schematic diagram of Embodiment 3 of the hidden grid photovoltaic cell assembly of the present invention includes a crystalline silicon substrate 1, a diffusion layer 2 made of a conductive material arranged on the upper surface of the crystalline silicon substrate 1, and a diffusion layer 2 arranged on the crystalline silicon substrate 1. The lower surface is made of a back electrode layer 3 made of conductive material, and the upper and lower surfaces of the crystalline silicon substrate 1 are passivated by texturing to form a double textured surface. The upper surface of the diffusion layer 2 is provided with a plurality of first hidden gate grooves 4 extending inside the crystalline silicon substrate 1 and inclined to the upper surface of the crystalline silicon substrate 1. The first hidden gate grooves 4 can be linear or arc-shaped or L-shaped or circular, the first hidden grid groove 4 in this embodiment is linear. A plurality of first hidden grid grooves 4 are arranged in parallel, uniformly and at intervals. The sharp corners of the opening ends of each first grid slot 4 are chamfered and passivated, that is, the sharp corners are cut off. Thin gate lines 5 are buried in each of the first grid recesses 4 . Diffusion layers 2 are provided on the upper surface of the crystalline silicon substrate 1 and in each of the first hidden gate grooves 4 , and the gate lines 5 are made of conductive materials, and the melting point of the conductive materials is higher than that of silicon. Each grid line 5 is installed on the groove bottom of each first hidden grid groove 4 respectively. The groove bottom of the first hidden grid groove 4 in this embodiment matches the shape of each corresponding grid line 5 . In this embodiment, the lower surface of the back electrode layer 3 is provided with a reflective layer 6 .

During use, a plurality of grid lines 5 are respectively installed on the groove bottoms of the first hidden grid grooves 4 which are arranged obliquely. Blocking the sunlight increases the light-receiving area of the photovoltaic cell assembly and improves the photoelectric conversion efficiency of the photovoltaic cell assembly; and by chamfering and passivating the sharp corners of the opening end of the first hidden grid groove 4, that is, cutting off the first Hide the tip of grid slot 4. This way the tip becomes a thicker shape. More photogenerated carriers can be generated, which further improves the photoelectric conversion efficiency; and by subjecting the upper and lower surfaces of the crystalline silicon substrate 1 to texturing and passivation treatment, it is ensured that as much light as possible is injected into the crystalline silicon substrate 1, Improve the photoelectric conversion efficiency; by setting the reflective layer 6 on the lower surface of the back electrode layer 3, the sunlight escaping through the crystalline silicon substrate 1 can be reflected back, so as to avoid the waste of sunlight.

The processing method of the hidden grid photovoltaic cell assembly of the present embodiment comprises the following steps:

(1) Texturing the upper and lower surfaces of the crystalline silicon substrate 1 to passivate both sides to form a double-textured crystalline silicon substrate;

(2) Process the upper surface of the double-textured crystalline silicon substrate 1 prepared in step (1) to form a plurality of first hidden gate grooves 4, so that the first hidden gate grooves 4 are inclined relative to the upper surface of the crystalline silicon substrate 1 The angle is set, and the plurality of first hidden grid grooves 4 are arranged parallel to each other, at intervals, and uniformly, and the sharp corners of the opening ends of each first hidden grid groove 4 are all subjected to chamfering and passivation treatment, that is, the sharp corners are cut off ;

(3) Carry out a diffusion coating process on the inner walls of the crystalline silicon substrate 1 and the first hidden grid groove 4 with conductive materials, so that the inner walls of each first hidden grid groove 4 of the double-textured crystalline silicon substrate 1 obtained in step (2) The diffusion layer is fully obtained to form a comprehensive and continuous photovoltaic cell PN junction, and the conductive material is used to coat the lower surface of the crystalline silicon substrate to form the back electrode layer 3, thereby forming a hidden grid photovoltaic cell module. The conductive material is also It can be sintered in the first storage grid groove 4 after pulping and brushing.

As shown in Figure 5, the structure schematic diagram of Embodiment 4 of the hidden grid photovoltaic cell assembly of the present invention includes a crystalline silicon substrate 1, a diffusion layer 2 arranged on the upper surface of the crystalline silicon substrate 1 and made of a conductive material, and a diffusion layer 2 arranged on the crystalline silicon substrate 1. The lower surface is made of a back electrode layer 3 made of conductive material, and the upper and lower surfaces of the crystalline silicon substrate 1 are passivated by texturing to form a double textured surface. The upper surface of the diffusion layer 2 is provided with a plurality of first hidden gate grooves 4 extending inside the crystalline silicon substrate 1 and inclined to the upper surface of the crystalline silicon substrate 1. The first hidden gate grooves 4 can be linear or arc-shaped or L-shaped or circular, the first hidden grid groove 4 in this embodiment is linear. A plurality of first hidden grid grooves 4 are arranged in parallel, uniformly and at intervals. The sharp corners of the opening ends of each first grid slot 4 are chamfered and passivated, that is, the sharp corners are cut off. Thin gate lines 5 are buried in each of the first grid recesses 4 . Diffusion layers 2 are provided on the upper surface of the crystalline silicon substrate 1 and in each of the first hidden gate grooves 4 , and the gate lines 5 are made of conductive materials, and the melting point of the conductive materials is higher than that of silicon. Each grid line 5 is installed on the groove bottom of each first hidden grid groove 4 respectively. The groove bottom of the first hidden grid groove 4 in this embodiment matches the shape of each corresponding grid line 5 . The photovoltaic cell assembly also includes at least one busbar 8 buried below the surface of the diffusion layer 2 . The upper surface of the diffusion layer 2 is provided with at least one second hidden gate groove 7 extending inside the crystalline silicon substrate 1 and inclined to the upper surface of the crystalline silicon substrate 1, and the sharp corners of the opening ends of each second hidden gate groove 7 are made The chamfering and passivation treatment is carried out, that is, the sharp corners are cut off. In this embodiment, there are two second hidden grid grooves 7 . The two second grid storage grooves 7 are vertically intersected with each of the first grid storage grooves 4 . A diffusion layer is arranged in the second hidden gate groove 7 , and the two main gate lines 8 are hidden in the groove bottoms of the two second hidden gate grooves 7 respectively. The busbar 8 is also made of conductive material, and the melting point of the conductive material is higher than that of silicon. The groove bottom of the second hidden gate groove 7 in this embodiment matches the shape of the corresponding busbar 8 . In this embodiment, a plurality of grid lines 5 and two main grid lines 8 are integrally formed. In this embodiment, the lower surface of the back electrode layer 3 is provided with a reflective layer 6 .

When in use, a plurality of grid lines 5 and two main grid lines 8 are integrally installed on the groove bottoms of a plurality of obliquely arranged first hidden grid grooves 4 and the groove bottoms of two obliquely arranged second hidden grid grooves 7, when When sunlight shines on the upper surface of the photovoltaic cell assembly, since the upper surface of the diffusion layer 2 does not have grid lines 5 and main grid lines 8 to block sunlight, the light-receiving area of the photovoltaic cell assembly is increased, and the photoelectric conversion efficiency of the photovoltaic cell assembly is improved. and by carrying out chamfering and passivation treatment to the sharp corners of the opening end of the first hidden grid groove 4 and the opening end sharp corners of the second hidden grid groove 7, that is, to cut off the tip of the first hidden grid groove 4 and the second Hide the tip of grid groove 7. This way the tips all become thicker shapes. More photogenerated carriers can be generated, which further improves the photoelectric conversion efficiency; and by subjecting the upper and lower surfaces of the crystalline silicon substrate 1 to texturing and passivation treatment, it is ensured that as much light as possible is injected into the crystalline silicon substrate 1, Improve the photoelectric conversion efficiency; by setting the reflective layer 6 on the lower surface of the back electrode layer 3, the sunlight escaping through the crystalline silicon substrate 1 can be reflected back, so as to avoid the waste of sunlight and improve its photoelectric conversion efficiency.

The processing method of the hidden grid photovoltaic cell assembly of the present embodiment comprises the following steps:

(1) Texturing the upper and lower surfaces of the crystalline silicon substrate 1 to passivate both sides to form a double-textured crystalline silicon substrate;

(2) Process the upper surface of the double-textured crystalline silicon substrate 1 obtained in step (1) into a plurality of first hidden grid grooves 4 and two second hidden grid grooves 7, so that the first hidden grid grooves 4, the second hidden grid grooves The two hidden grid grooves 7 are arranged at an oblique angle relative to the upper surface of the crystalline silicon substrate 1, and the plurality of first hidden grid grooves 4 are arranged parallel to each other, at intervals, and evenly arranged, and the two second hidden grid grooves 7 are parallel and spaced apart. Setting, two second hidden grid grooves 7 are perpendicular to a plurality of first hidden grid grooves 4, a plurality of first hidden grid grooves 4 communicate with two second hidden grid grooves 7, and each first hidden grid groove 4, The sharp corners of the opening ends of each second grid slot 7 are chamfered and passivated, that is, the sharp corners are cut off;

(3) Carry out a diffusion coating process on the inner walls of the crystalline silicon substrate 1, the first hidden grid groove 4, and the second hidden grid groove 7 with a conductive material, so that each of the double-textured crystalline silicon substrate 1 obtained in step (2) Diffusion layers are fully obtained in the first hidden grid groove 4 and the second hidden grid groove to form a comprehensive and continuous photovoltaic cell PN junction, and a conductive material is used to coat the lower surface of the crystalline silicon substrate to form a back electrode layer 3, Thus a hidden grid photovoltaic cell assembly is made.

As shown in Figure 6, a schematic structural diagram of an embodiment of the photovoltaic system of the present invention includes an optical phase-shifting plate 9 and the hidden grid photovoltaic cell assembly described in any one of the above-mentioned Figures 2-5, and this embodiment chooses to use the one described in Figure 4 The hidden grid photovoltaic cell assembly includes a crystalline silicon substrate 1, a diffusion layer 2 made of a conductive material arranged on the upper surface of the crystalline silicon substrate 1, and a back electrode layer made of a conductive material arranged on the lower surface of the crystalline silicon substrate 1 3. Both the upper surface and the lower surface of the crystalline silicon substrate 1 are passivated by texture making to form a double textured surface. The upper surface of the diffusion layer 2 is provided with a plurality of first hidden gate grooves 4 extending inside the crystalline silicon substrate 1 and inclined to the upper surface of the crystalline silicon substrate 1. The first hidden gate grooves 4 can be linear or arc-shaped or L-shaped or circular, the first hidden grid groove 4 in this embodiment is linear. A plurality of first hidden grid grooves 4 are arranged in parallel, uniformly and at intervals. The sharp corners of the opening ends of each first grid slot 4 are chamfered and passivated, that is, the sharp corners are cut off. Thin gate lines 5 are buried in each of the first grid recesses 4 . Diffusion layers 2 are provided on the upper surface of the crystalline silicon substrate 1 and in each of the first hidden gate grooves 4 , and the gate lines 5 are made of conductive materials, and the melting point of the conductive materials is higher than that of silicon. Each grid line 5 is installed on the groove bottom of each first hidden grid groove 4 respectively. The groove bottom of the first hidden grid groove 4 in this embodiment matches the shape of each corresponding grid line 5 . In this embodiment, the lower surface of the back electrode layer 3 is provided with a reflective layer 6 . The optical phase shifter 9 is disposed obliquely above the diffusion layer 2 .

When in use, since the photovoltaic system is equipped with an optical phase shift plate 9, sunlight can be transferred to the hidden grid photovoltaic cell assembly through the optical phase shift plate 9, so that the utilization rate of the hidden grid photovoltaic cell assembly is more than doubled. Comprehensively reduce the cost of photovoltaic system power generation.

Other embodiments of the invention will be readily apparent to those skilled in the art from consideration of the specification and practice of the invention disclosed herein. This application is intended to cover any modification, use or adaptation of the present invention, which follow the general principles of the present invention and include undisclosed common knowledge or conventional technical means in the technical field. The specification and examples are to be considered exemplary only, with a true scope and spirit of the invention being indicated by the following claims.

It should be understood that the present invention is not limited to the precise constructions which have been described above and shown in the accompanying drawings, and various modifications and changes may be made without departing from the scope thereof. The scope of the invention is limited only by the appended claims.

Claims (10)

1. hide a grid photovoltaic cell component, including crystal silicon substrate, the expansion with electric conductivity that is arranged at crystal silicon upper surface of substrate Dissipate layer and be arranged at crystal silicon substrate lower surface there is the dorsum electrode layer of electric conductivity, it is characterised in that the surface of described diffusion layer with Under be embedded with multiple grid line.

Tibetan the most according to claim 1 grid photovoltaic cell component, it is characterised in that the upper surface of described diffusion layer offers The first Tibetan grid groove that is multiple that extend crystal silicon base internal and that favour crystal silicon upper surface of substrate, described crystal silicon upper surface of substrate Being provided with described diffusion layer in hiding grid groove with each first, each described grid line is the most hidden is located at each first bottom land hiding grid groove.

Tibetan the most according to claim 2 grid photovoltaic cell component, it is characterised in that also include being embedded in diffusion layer surface with Under at least one main gate line.

Tibetan the most according to claim 3 grid photovoltaic cell component, it is characterised in that the upper surface of described diffusion layer offers The second Tibetan grid groove that is that at least one extends crystal silicon base internal and that favour crystal silicon upper surface of substrate, described second hides grid groove Inside being provided with diffusion layer, each described main gate line is the most hidden is located at each second bottom land hiding grid groove.

Tibetan the most according to claim 4 grid photovoltaic cell component, it is characterised in that described first hides grid groove, the second Tibetan grid The opening wedge angle position of groove is all through chamfering Passivation Treatment.

Tibetan the most according to claim 5 grid photovoltaic cell component, it is characterised in that the upper and lower surface of described crystal silicon substrate All making herbs into wool passivation.

Tibetan the most according to claim 6 grid photovoltaic cell component, it is characterised in that the lower surface of described dorsum electrode layer is provided with Reflector layer.

8. the processing method according to the Tibetan grid photovoltaic cell component one of claim 1-7 Suo Shu, it is characterised in that include Following steps:

(1) the making herbs into wool passivation respectively of the upper and lower surface of crystal silicon substrate is formed double matte；

(2) step (1) prepare crystal silicon upper surface of substrate make multiple first hide grid groove, make described first hide grid groove relative to Crystal silicon upper surface of substrate all becomes to be obliquely installed, and hides the opening wedge angle position of grid groove all at chamfering passivation by each described first Reason；

(3) it is diffused coating process with conductive material in described crystal silicon substrate and the first inwall hiding grid groove, makes step (2) Each described the first of the crystal silicon substrate obtained obtains diffusion layer in hiding grid groove comprehensively, forms comprehensive continuous print photovoltaic cell PN junction, Carry out coating process with conductive material at the lower surface of crystal silicon substrate, make dorsum electrode layer, thus make Tibetan grid photovoltaic cell Assembly.

The processing method of Tibetan the most according to claim 8 grid photovoltaic cell component, it is characterised in that in described step (2) It is additionally included in prepared crystal silicon upper surface of substrate and makes at least one second Tibetan grid groove, make described second to hide grid groove relative to crystal silicon Upper surface of substrate becomes to be obliquely installed, and the opening wedge angle position that described second hides grid groove is done chamfering Passivation Treatment, described step (3) middle increasing is diffused coating process at the second Tibetan grid groove inwall, comprehensive in making each described first to hide grid groove, the second Tibetan grid groove Obtain diffusion layer.

10. a photovoltaic system, it is characterised in that include the Tibetan grid photovoltaic that one of optics phase shift plate and claim 1-7 are described Battery component, the oblique upper of described Tibetan grid photovoltaic cell component is located at by described optics phase shift plate.