CN102593196B - Low-resistance buried-gate solar cell and manufacture method thereof - Google Patents
Low-resistance buried-gate solar cell and manufacture method thereof Download PDFInfo
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- CN102593196B CN102593196B CN201210047064.8A CN201210047064A CN102593196B CN 102593196 B CN102593196 B CN 102593196B CN 201210047064 A CN201210047064 A CN 201210047064A CN 102593196 B CN102593196 B CN 102593196B
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Abstract
The invention relates to a low-resistance buried-gate solar cell and a manufacture method of the low-resistance buried-gate solar cell. The low-resistance buried-gate solar cell is provided with a front electrode on a light-receiving surface and is provided with a trapezoidal groove with an upper narrow part and a lower wide part on a position, where the front electrode needs to be arranged, of the light-receiving surface of the cell, wherein a trapezoidal buried-gate electrode is arranged in the trapezoidal groove. The manufacture method of the low-resistance buried-gate solar cell comprises the steps of: firstly, making the trapezoidal groove on a part where the trapezoidal buried-gate electrode needs to be formed through a laser grooving method; then injecting electrode slurry in the trapezoidal groove by using a screen printing technology; and finally, forming an electrode through sintering. The low-resistance buried-gate solar cell has the beneficial effects that the contact area of the electrode and silicon is increased by adopting the trapezoidal buried-gate electrode, the contradiction between the metal electrode contact area and the electrode shielding area is eliminated, and the front contact resistance of the battery can be effectively lowered, and the filling factor and the integral efficiency are improved.
Description
Technical field
The present invention relates to a kind of low-resistance buried-gate formula solar cell and preparation method thereof.
Background technology
As shown in Figure 1, current screen printing technology is equivalent to directly metal is positioned over the front surface of solar cell.Because Ag is lighttight material, so the region existing at electrode is the equal of to be blocked for incident light.Although the semiconductor regions being blocked, due to refraction and the diffraction effect of light, not cannot carry out opto-electronic conversion completely, the occlusion effect of front electrode remains the more considerable part of loss in efficiency.So current technological improvement generally all wishes the Ag slurry of as much to be deposited in as far as possible little scope, the depth-width ratio of electrode before namely promoting; Can, reducing under the prerequisite of shielded area, reduce the contact resistance between electrode and semiconductor like this.Can increase to a certain extent the depth-width ratio of electrode by using laser to form groove structure at the position that needs electrodes, but thorough not enough.
Summary of the invention
Technical problem to be solved by this invention is: a kind of low-resistance buried-gate formula solar cell and preparation method thereof is provided, realizes contact resistance less between electrode and solar cell, and can effectively reduce blocking of electrode pair incident light.
The technical solution adopted for the present invention to solve the technical problems is: a kind of low-resistance buried-gate formula solar cell, electrode before the sensitive surface of battery arranges, before the sensitive surface of battery need to arrange, up-narrow and down-wide trapezoidal groove is opened in the position of electrode, makes trapezoidal buried gate electrode in trapezoidal groove.
The manufacture method of this low-resistance buried-gate formula solar cell is: first make trapezoidal groove at the position that need to form trapezoidal buried gate electrode by laser grooving method;
Then use screen printing technology that electrode slurry is injected to trapezoidal groove;
Form electrode finally by oversintering.
Particularly, the method of producing trapezoidal groove by laser grooving method is: the wobbling action by laser head in the plane vertical with fluting direction, make laser beam pass the intersection point of the extended line of the sidewall of the both sides of trapezoidal groove, and in the angular range of extended line, swing simultaneously, by controlling the time of ablation, on the sensitive surface of battery, etch trapezoidal groove, the shift action by laser head along fluting direction, extends forward trapezoidal groove.
Particularly, laser head swings along the intersection point of the extended line of the sidewall take the both sides of trapezoidal groove as the circular arc in the center of circle.
The invention has the beneficial effects as follows: trapezoidal buried gate electrode has increased the contact area of electrode and silicon, solved the contradiction between metal electrode contact area and electrode shielded area simultaneously, the front contact resistance of battery be can effectively reduce, fill factor, curve factor and whole efficiency promoted.
Accompanying drawing explanation
Below in conjunction with drawings and Examples, the present invention is further described.
Fig. 1 is the structural representation of electrode before current more common solar cell;
Fig. 2 is the structural representation of trapezoidal buried gate electrode of the present invention;
Fig. 3 is the process chart of this trapezoidal buried gate electrode of formation of the present invention;
In figure: 1. trapezoidal buried gate electrode, 2. battery, 3. trapezoidal groove, 4. laser head.
Embodiment
As shown in Figure 2, a kind of low-resistance buried-gate formula solar cell, electrode before the sensitive surface of battery 2 arranges, before the sensitive surface of battery 2 need to arrange, up-narrow and down-wide trapezoidal groove 3 is opened in the position of electrode, at the trapezoidal buried gate electrode 1 of the interior making of trapezoidal groove 3.
As shown in Figure 3, the manufacture method of this low-resistance buried-gate formula solar cell is: first make trapezoidal groove 3 at the position that need to form trapezoidal buried gate electrode 1 by laser grooving method;
Sensitive surface forms PN junction by diffusion technology, and PN junction also exists in trapezoidal groove 3;
Then use screen printing technology that Ag slurry is injected to trapezoidal groove 3;
Finally print overleaf Al slurry and Ag-Al slurry, form electrode through oversintering;
The method of producing trapezoidal groove 3 by laser grooving method is: the wobbling action by laser head 4 in the plane vertical with fluting direction, particularly, laser head 4 swings along the intersection point of the extended line of the sidewall of the both sides take trapezoidal groove 3 as the circular arc in the center of circle, make laser beam pass the intersection point of the extended line of the sidewall of the both sides of trapezoidal groove 3, and in the angular range of extended line, swing simultaneously, by controlling the time of ablation, on the sensitive surface of battery 2, etch trapezoidal groove 3, shift action by laser head 4 along fluting direction, trapezoidal groove 3 is extended forward.
Claims (2)
1. a manufacture method for low-resistance buried-gate formula solar cell, is characterized in that: first make trapezoidal groove (3) at the position that need to form trapezoidal buried gate electrode (1) by laser grooving method;
Then use screen printing technology that electrode slurry is injected to trapezoidal groove (3);
Form electrode finally by oversintering;
The method of producing trapezoidal groove (3) by laser grooving method is: the wobbling action by laser head (4) in the plane vertical with fluting direction, make laser beam pass the intersection point of the extended line of the sidewall of the both sides of trapezoidal groove (3), and in the angular range of extended line, swing simultaneously, by controlling the time of ablation, on the sensitive surface of battery (2), etch trapezoidal groove (3), shift action by laser head (4) along fluting direction, extends forward trapezoidal groove (3).
2. the manufacture method of low-resistance buried-gate formula solar cell claimed in claim 1, is characterized in that: described laser head (4) swings along the intersection point of the extended line of the sidewall of the both sides take trapezoidal groove (3) as the circular arc in the center of circle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201210047064.8A CN102593196B (en) | 2012-02-28 | 2012-02-28 | Low-resistance buried-gate solar cell and manufacture method thereof |
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| CN201210047064.8A CN102593196B (en) | 2012-02-28 | 2012-02-28 | Low-resistance buried-gate solar cell and manufacture method thereof |
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| CN102593196A CN102593196A (en) | 2012-07-18 |
| CN102593196B true CN102593196B (en) | 2014-06-18 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102820376A (en) * | 2012-08-16 | 2012-12-12 | 天津三安光电有限公司 | Preparation method of electrode of solar battery chip |
| CN103151257B (en) * | 2013-03-14 | 2016-03-23 | 上海华力微电子有限公司 | A kind of manufacture method of Σ type silicon trench |
| CN105552146A (en) * | 2016-02-24 | 2016-05-04 | 晶科能源有限公司 | Crystal silicon battery and fabrication method thereof |
| CN106129175B (en) * | 2016-07-12 | 2018-05-15 | 李会欣 | The preparation method of photovoltaic cell |
| CN106057922B (en) * | 2016-07-22 | 2017-08-29 | 李会欣 | Hide grid line photovoltaic cell component and hiding grid line printing mould and photovoltaic moves photosystem |
| CN106158995B (en) * | 2016-08-31 | 2017-12-05 | 李会欣 | Hide grid photovoltaic cell component, processing method and photovoltaic system |
| CN108269865A (en) * | 2018-03-06 | 2018-07-10 | 南京日托光伏科技股份有限公司 | A kind of MWT preparation method of solar battery of low cost, ultra-fine grid line |
| CN108447922A (en) * | 2018-04-27 | 2018-08-24 | 苏州浩顺光伏材料有限公司 | A kind of solar battery sheet that conversion ratio is high |
| CN109037368A (en) * | 2018-08-21 | 2018-12-18 | 北京铂阳顶荣光伏科技有限公司 | Solar cell module and electrode lead-out method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1911588A (en) * | 2005-08-12 | 2007-02-14 | 北京国科世纪激光技术有限公司 | Method and device for grooving on silicon photoelectric battery surface |
| CN102082199A (en) * | 2010-11-19 | 2011-06-01 | 山东力诺太阳能电力股份有限公司 | Groove notching and grid burying method for crystalline silicon solar cell |
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| JPH0757988A (en) * | 1993-08-11 | 1995-03-03 | Mitsubishi Heavy Ind Ltd | Line image pattern writing method |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1911588A (en) * | 2005-08-12 | 2007-02-14 | 北京国科世纪激光技术有限公司 | Method and device for grooving on silicon photoelectric battery surface |
| CN102082199A (en) * | 2010-11-19 | 2011-06-01 | 山东力诺太阳能电力股份有限公司 | Groove notching and grid burying method for crystalline silicon solar cell |
Non-Patent Citations (1)
| Title |
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| JP特开平7-57988A 1995.03.03 |
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Address after: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee after: TRINA SOLAR Co.,Ltd. Address before: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee before: trina solar Ltd. Address after: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee after: trina solar Ltd. Address before: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. |