CN105531807B - 监测光掩模缺陷率的改变 - Google Patents

监测光掩模缺陷率的改变 Download PDF

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Publication number
CN105531807B
CN105531807B CN201480049582.0A CN201480049582A CN105531807B CN 105531807 B CN105531807 B CN 105531807B CN 201480049582 A CN201480049582 A CN 201480049582A CN 105531807 B CN105531807 B CN 105531807B
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China
Prior art keywords
reticle
baseline
event
images
current
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CN201480049582.0A
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English (en)
Chinese (zh)
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CN105531807A (zh
Inventor
官淳
熊亚霖
约瑟夫·布莱谢
罗伯特·A·康斯托克
马克·J·维尔
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KLA Corp
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KLA Tencor Corp
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Priority to CN201811100685.1A priority Critical patent/CN109659245B/zh
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Classifications

    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G06T7/0006—Industrial image inspection using a design-rule based approach
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N2021/95676—Masks, reticles, shadow masks
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Pathology (AREA)
  • Immunology (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
CN201480049582.0A 2013-07-29 2014-07-29 监测光掩模缺陷率的改变 Active CN105531807B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201811100685.1A CN109659245B (zh) 2013-07-29 2014-07-29 监测光掩模缺陷率的改变

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361859670P 2013-07-29 2013-07-29
US61/859,670 2013-07-29
US14/278,277 2014-05-15
US14/278,277 US9518935B2 (en) 2013-07-29 2014-05-15 Monitoring changes in photomask defectivity
PCT/US2014/048720 WO2015017453A1 (en) 2013-07-29 2014-07-29 Monitoring changes in photomask defectivity

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201811100685.1A Division CN109659245B (zh) 2013-07-29 2014-07-29 监测光掩模缺陷率的改变

Publications (2)

Publication Number Publication Date
CN105531807A CN105531807A (zh) 2016-04-27
CN105531807B true CN105531807B (zh) 2018-10-19

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Family Applications (2)

Application Number Title Priority Date Filing Date
CN201480049582.0A Active CN105531807B (zh) 2013-07-29 2014-07-29 监测光掩模缺陷率的改变
CN201811100685.1A Active CN109659245B (zh) 2013-07-29 2014-07-29 监测光掩模缺陷率的改变

Family Applications After (1)

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CN201811100685.1A Active CN109659245B (zh) 2013-07-29 2014-07-29 监测光掩模缺陷率的改变

Country Status (6)

Country Link
US (2) US9518935B2 (https=)
JP (1) JP6472447B2 (https=)
KR (1) KR102102019B1 (https=)
CN (2) CN105531807B (https=)
TW (1) TWI623812B (https=)
WO (1) WO2015017453A1 (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9518935B2 (en) 2013-07-29 2016-12-13 Kla-Tencor Corporation Monitoring changes in photomask defectivity
JP6668199B2 (ja) * 2016-08-19 2020-03-18 株式会社ニューフレアテクノロジー マスク検査方法
US10395358B2 (en) * 2016-11-10 2019-08-27 Kla-Tencor Corp. High sensitivity repeater defect detection
US10451563B2 (en) * 2017-02-21 2019-10-22 Kla-Tencor Corporation Inspection of photomasks by comparing two photomasks
DE102018105322A1 (de) 2018-03-08 2019-09-12 Carl Zeiss Smt Gmbh Verfahren zum Betreiben einer industriellen Maschine
US10866197B2 (en) * 2018-09-20 2020-12-15 KLA Corp. Dispositioning defects detected on extreme ultraviolet photomasks
IL282349B2 (en) 2018-10-23 2025-04-01 Asml Netherlands Bv Device and method for adaptive alignment
US11499924B2 (en) * 2019-06-03 2022-11-15 KLA Corp. Determining one or more characteristics of light in an optical system
US11953448B2 (en) * 2019-09-27 2024-04-09 Taiwan Semiconductor Manufacturing Company Ltd. Method for defect inspection
US11379972B2 (en) * 2020-06-03 2022-07-05 Applied Materials Israel Ltd. Detecting defects in semiconductor specimens using weak labeling
EP3945458B1 (en) * 2020-07-29 2024-04-10 Tata Consultancy Services Limited Identification of defect types in liquid pipelines for classification and computing severity thereof
US20260099087A1 (en) * 2024-10-07 2026-04-09 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of manufacturing semiconductor device and extreme ultraviolet photolithography systems

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102084396A (zh) * 2009-05-08 2011-06-01 索尼公司 图像处理设备、方法和程序
CN102792297A (zh) * 2010-03-01 2012-11-21 日本电气株式会社 模式匹配装置、模式匹配方法和模式匹配系统

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6614520B1 (en) 1997-12-18 2003-09-02 Kla-Tencor Corporation Method for inspecting a reticle
US6516085B1 (en) * 1999-05-03 2003-02-04 Kla-Tencor Apparatus and methods for collecting global data during a reticle inspection
JP2006080437A (ja) * 2004-09-13 2006-03-23 Intel Corp マスク・ブランクス検査方法及びマスク・ブランク検査ツール
JP2008020374A (ja) 2006-07-14 2008-01-31 Hitachi High-Technologies Corp 欠陥検査方法およびその装置
US7873204B2 (en) 2007-01-11 2011-01-18 Kla-Tencor Corporation Method for detecting lithographically significant defects on reticles
US7738093B2 (en) 2007-05-07 2010-06-15 Kla-Tencor Corp. Methods for detecting and classifying defects on a reticle
JP2009236697A (ja) * 2008-03-27 2009-10-15 Fujitsu Microelectronics Ltd フォトマスクの検査方法及び検査装置
KR20110027979A (ko) * 2009-09-11 2011-03-17 삼성모바일디스플레이주식회사 마스크 불량 검사 장치
JP2011247957A (ja) 2010-05-24 2011-12-08 Toshiba Corp パターン検査方法および半導体装置の製造方法
US9518935B2 (en) 2013-07-29 2016-12-13 Kla-Tencor Corporation Monitoring changes in photomask defectivity

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102084396A (zh) * 2009-05-08 2011-06-01 索尼公司 图像处理设备、方法和程序
CN102792297A (zh) * 2010-03-01 2012-11-21 日本电气株式会社 模式匹配装置、模式匹配方法和模式匹配系统

Also Published As

Publication number Publication date
TWI623812B (zh) 2018-05-11
JP2016528497A (ja) 2016-09-15
US9518935B2 (en) 2016-12-13
US20150029498A1 (en) 2015-01-29
KR102102019B1 (ko) 2020-04-17
CN109659245B (zh) 2020-08-04
US9892503B2 (en) 2018-02-13
KR20160039642A (ko) 2016-04-11
JP6472447B2 (ja) 2019-02-20
WO2015017453A1 (en) 2015-02-05
CN105531807A (zh) 2016-04-27
TW201514616A (zh) 2015-04-16
CN109659245A (zh) 2019-04-19
US20170053395A1 (en) 2017-02-23

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