KR102102019B1 - 포토마스크 결함의 변화 모니터링 - Google Patents

포토마스크 결함의 변화 모니터링 Download PDF

Info

Publication number
KR102102019B1
KR102102019B1 KR1020167004810A KR20167004810A KR102102019B1 KR 102102019 B1 KR102102019 B1 KR 102102019B1 KR 1020167004810 A KR1020167004810 A KR 1020167004810A KR 20167004810 A KR20167004810 A KR 20167004810A KR 102102019 B1 KR102102019 B1 KR 102102019B1
Authority
KR
South Korea
Prior art keywords
reticle
inspection
baseline
defects
candidate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020167004810A
Other languages
English (en)
Korean (ko)
Other versions
KR20160039642A (ko
Inventor
춘 구안
얄린 슝
조셉 블리처
로버트 에이. 캄스톡
마크 제이. 윌
Original Assignee
케이엘에이 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 케이엘에이 코포레이션 filed Critical 케이엘에이 코포레이션
Publication of KR20160039642A publication Critical patent/KR20160039642A/ko
Application granted granted Critical
Publication of KR102102019B1 publication Critical patent/KR102102019B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G06T7/0006—Industrial image inspection using a design-rule based approach
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N2021/95676—Masks, reticles, shadow masks
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Theoretical Computer Science (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
KR1020167004810A 2013-07-29 2014-07-29 포토마스크 결함의 변화 모니터링 Active KR102102019B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361859670P 2013-07-29 2013-07-29
US61/859,670 2013-07-29
US14/278,277 US9518935B2 (en) 2013-07-29 2014-05-15 Monitoring changes in photomask defectivity
US14/278,277 2014-05-15
PCT/US2014/048720 WO2015017453A1 (en) 2013-07-29 2014-07-29 Monitoring changes in photomask defectivity

Publications (2)

Publication Number Publication Date
KR20160039642A KR20160039642A (ko) 2016-04-11
KR102102019B1 true KR102102019B1 (ko) 2020-04-17

Family

ID=52390256

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020167004810A Active KR102102019B1 (ko) 2013-07-29 2014-07-29 포토마스크 결함의 변화 모니터링

Country Status (6)

Country Link
US (2) US9518935B2 (https=)
JP (1) JP6472447B2 (https=)
KR (1) KR102102019B1 (https=)
CN (2) CN109659245B (https=)
TW (1) TWI623812B (https=)
WO (1) WO2015017453A1 (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9518935B2 (en) 2013-07-29 2016-12-13 Kla-Tencor Corporation Monitoring changes in photomask defectivity
JP6668199B2 (ja) * 2016-08-19 2020-03-18 株式会社ニューフレアテクノロジー マスク検査方法
US10395358B2 (en) * 2016-11-10 2019-08-27 Kla-Tencor Corp. High sensitivity repeater defect detection
US10451563B2 (en) * 2017-02-21 2019-10-22 Kla-Tencor Corporation Inspection of photomasks by comparing two photomasks
DE102018105322A1 (de) 2018-03-08 2019-09-12 Carl Zeiss Smt Gmbh Verfahren zum Betreiben einer industriellen Maschine
US10866197B2 (en) * 2018-09-20 2020-12-15 KLA Corp. Dispositioning defects detected on extreme ultraviolet photomasks
WO2020083612A1 (en) 2018-10-23 2020-04-30 Asml Netherlands B.V. Method and apparatus for adaptive alignment
US11499924B2 (en) * 2019-06-03 2022-11-15 KLA Corp. Determining one or more characteristics of light in an optical system
US11953448B2 (en) * 2019-09-27 2024-04-09 Taiwan Semiconductor Manufacturing Company Ltd. Method for defect inspection
US11379972B2 (en) * 2020-06-03 2022-07-05 Applied Materials Israel Ltd. Detecting defects in semiconductor specimens using weak labeling
US11790518B2 (en) * 2020-07-29 2023-10-17 Tata Consultancy Services Limited Identification of defect types in liquid pipelines for classification and computing severity thereof
US20260099087A1 (en) * 2024-10-07 2026-04-09 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of manufacturing semiconductor device and extreme ultraviolet photolithography systems

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030091224A1 (en) 1999-05-03 2003-05-15 Kla-Tencor Technologies Corporation Apparatus and methods for collecting global data during a reticle inspection
US20060054836A1 (en) 2004-09-13 2006-03-16 Yoshihiro Tezuka Mask blanks inspection method and mask blank inspection tool
JP2008020374A (ja) 2006-07-14 2008-01-31 Hitachi High-Technologies Corp 欠陥検査方法およびその装置
JP2009236697A (ja) * 2008-03-27 2009-10-15 Fujitsu Microelectronics Ltd フォトマスクの検査方法及び検査装置
JP2011059098A (ja) * 2009-09-11 2011-03-24 Samsung Mobile Display Co Ltd マスク不良検査装置
US20110286658A1 (en) 2010-05-24 2011-11-24 Tadashi Mitsui Pattern inspection method and semiconductor device manufacturing method
US20120331487A1 (en) 2010-03-01 2012-12-27 Nec Corporation Pattern matching device, pattern matching method, and pattern matching system

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6614520B1 (en) 1997-12-18 2003-09-02 Kla-Tencor Corporation Method for inspecting a reticle
US7873204B2 (en) 2007-01-11 2011-01-18 Kla-Tencor Corporation Method for detecting lithographically significant defects on reticles
US7738093B2 (en) 2007-05-07 2010-06-15 Kla-Tencor Corp. Methods for detecting and classifying defects on a reticle
JP5229575B2 (ja) 2009-05-08 2013-07-03 ソニー株式会社 画像処理装置および方法、並びにプログラム
US9518935B2 (en) 2013-07-29 2016-12-13 Kla-Tencor Corporation Monitoring changes in photomask defectivity

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030091224A1 (en) 1999-05-03 2003-05-15 Kla-Tencor Technologies Corporation Apparatus and methods for collecting global data during a reticle inspection
US20060054836A1 (en) 2004-09-13 2006-03-16 Yoshihiro Tezuka Mask blanks inspection method and mask blank inspection tool
JP2008020374A (ja) 2006-07-14 2008-01-31 Hitachi High-Technologies Corp 欠陥検査方法およびその装置
JP2009236697A (ja) * 2008-03-27 2009-10-15 Fujitsu Microelectronics Ltd フォトマスクの検査方法及び検査装置
JP2011059098A (ja) * 2009-09-11 2011-03-24 Samsung Mobile Display Co Ltd マスク不良検査装置
US20120331487A1 (en) 2010-03-01 2012-12-27 Nec Corporation Pattern matching device, pattern matching method, and pattern matching system
US20110286658A1 (en) 2010-05-24 2011-11-24 Tadashi Mitsui Pattern inspection method and semiconductor device manufacturing method

Also Published As

Publication number Publication date
JP2016528497A (ja) 2016-09-15
US9892503B2 (en) 2018-02-13
TWI623812B (zh) 2018-05-11
US20150029498A1 (en) 2015-01-29
CN105531807B (zh) 2018-10-19
CN109659245B (zh) 2020-08-04
JP6472447B2 (ja) 2019-02-20
TW201514616A (zh) 2015-04-16
US9518935B2 (en) 2016-12-13
CN109659245A (zh) 2019-04-19
KR20160039642A (ko) 2016-04-11
WO2015017453A1 (en) 2015-02-05
CN105531807A (zh) 2016-04-27
US20170053395A1 (en) 2017-02-23

Similar Documents

Publication Publication Date Title
KR102102019B1 (ko) 포토마스크 결함의 변화 모니터링
KR102329153B1 (ko) 두 개의 포토마스크의 비교에 의한 포토마스크의 검사
US9805462B2 (en) Machine learning method and apparatus for inspecting reticles
US10074036B2 (en) Critical dimension uniformity enhancement techniques and apparatus
KR102369848B1 (ko) 관심 패턴 이미지 집단에 대한 이상치 검출
JP2017523390A (ja) 検査のための高解像度フルダイイメージデータの使用
US20170337673A1 (en) Systems and methods for automatic correction of drift between inspection and design for massive pattern searching
KR20180030249A (ko) 반도체 마스크 검사를 위한 다각형 기반 지오메트리 분류
JP7698738B2 (ja) マルチダイマスクの欠陥検出
CN116152155B (zh) 用于半导体样本制造的掩模检查
KR102201122B1 (ko) 민감도 개선 및 뉴슨스 억제를 위해 로직 및 핫스팟 검사에서 z-층 컨텍스트를 사용하는 시스템 및 방법
CN116754580B (zh) 半导体样品制造的掩模检查

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
A302 Request for accelerated examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PA0302 Request for accelerated examination

St.27 status event code: A-1-2-D10-D17-exm-PA0302

St.27 status event code: A-1-2-D10-D16-exm-PA0302

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

U11 Full renewal or maintenance fee paid

Free format text: ST27 STATUS EVENT CODE: A-4-4-U10-U11-OTH-PR1001 (AS PROVIDED BY THE NATIONAL OFFICE)

Year of fee payment: 6