CN105503159A - 一种氧化镁烧结体靶材的微量硅元素均匀掺杂方法 - Google Patents

一种氧化镁烧结体靶材的微量硅元素均匀掺杂方法 Download PDF

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CN105503159A
CN105503159A CN201510931180.XA CN201510931180A CN105503159A CN 105503159 A CN105503159 A CN 105503159A CN 201510931180 A CN201510931180 A CN 201510931180A CN 105503159 A CN105503159 A CN 105503159A
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magnesium oxide
silicon
dissolved
silicon source
water
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曾卫军
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Yingkou Magnesia Materials Research Institute Co Ltd
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Yingkou Magnesia Materials Research Institute Co Ltd
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    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/03—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on magnesium oxide, calcium oxide or oxide mixtures derived from dolomite
    • C04B35/04—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on magnesium oxide, calcium oxide or oxide mixtures derived from dolomite based on magnesium oxide
    • C—CHEMISTRY; METALLURGY
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    • C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/62605—Treating the starting powders individually or as mixtures
    • C04B35/62625—Wet mixtures
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    • H01J11/00—Gas-filled discharge tubes with alternating current induction of the discharge, e.g. alternating current plasma display panels [AC-PDP]; Gas-filled discharge tubes without any main electrode inside the vessel; Gas-filled discharge tubes with at least one main electrode outside the vessel
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Abstract

本发明公开了一种氧化镁烧结体靶材的微量硅元素均匀掺杂方法。首先将硅源溶解制备成前驱液：当所用硅源为可溶于水的如硅酸钠、硅酸、硅酸钾等，直接用去离子水溶解，再进行定容，形成前驱液；当所用硅源为可溶于有机溶剂的硅源，如正硅酸乙脂、三甲基硅醇、四乙酰氧基硅烷等，先溶解于有机溶剂，再以乙醇-水进行定容，形成前驱液。前驱液再与一定重量比的氧化镁原料在球磨机中混合，制备成浆料，从而完成硅元素的均匀掺杂。此浆料再进行喷雾造粒、压制成型、烧结等工序，制备成微量硅元素掺杂的氧化镁烧结体靶材。本发明掺杂时间短，均匀性高，适合工业化应用。

Description

一种氧化镁烧结体靶材的微量硅元素均匀掺杂方法
技术领域
本发明涉及一种微量元素均匀掺杂方法，特别涉及一种氧化镁烧结体靶材的微量硅元素均匀掺杂方法。
背景技术
氧化镁是最耐离子撞击的材料之一，且具有很高的二次电子发射效率与透光率，因而被广泛用作等离子体显示板(PDP)的介质保护膜。在AC-PDP放电单元中，介质保护膜直接与放电气体接触，要求其具有：离子诱导二次电子发射系数大、抗离子轰击、对可见光透明。高纯氧化镁烧结体靶材在彩色交流等离子体显示器上的成功应用，极大的提高了其使用寿命和显示效果。然而降低PDP屏的着火电压是PDP行业永恒的课题。各种实验研究显示，提高MgO膜的二次电子发射系数(γ)，可以降低着火电压和维持电压，整机产品更加节能。
解决上述问题的有效途径是，在高纯氧化镁烧结体靶材中均匀掺杂微量的某种元素，可以增加介质保护膜的晶格缺陷，更容易因受到激发而产生大量的二次电子，进而提高二次电子发射系数。目前，已经得到良好试验效果的掺杂元素是硅元素，以纳米SiO2与MgO粉体进行干法混合，混合24～48小时。该方法较费时，且混合均匀性较差。
发明内容
为了解决高纯氧化镁烧结体靶材中惨杂不均匀的问题，本发明提供一种氧化镁烧结体靶材的微量硅元素均匀掺杂方法。
本发明的目的是通过以下措施来达到：提供一种氧化镁烧结体靶材的微量硅元素均匀掺杂方法，首先将硅源溶解制备成前驱液；再与一定重量比的氧化镁原料在球磨机中混合，制备成浆料，从而完成硅元素的均匀掺杂；此浆料再进行喷雾造粒、压制成型、烧结等工序，制备成微量硅元素掺杂的氧化镁烧结体靶材。当所用硅源为可溶于水的如硅酸钠、硅酸、硅酸钾等，直接用去离子水溶解，再进行定容，形成前驱液。当所用硅源为可溶于有机溶剂的硅源，如正硅酸乙脂、三甲基硅醇、四乙酰氧基硅烷等，先溶解于有机溶剂，再以乙醇-水进行定容，形成前驱液。
有益效果：本发明可以在1～2小时内，将微量的硅元素均匀掺杂到氧化镁原料中；掺杂时间短，均匀性高，适合工业化应用。
具体实施方式
下面结合实施例对本发明进行详细说明。
本发明提供一种氧化镁烧结体靶材的微量硅元素均匀掺杂方法，首先将硅源溶解制备成前驱液。当所用硅源为可溶于水的如硅酸钠、硅酸、硅酸钾等，直接用去离子水溶解，再进行定容，形成前驱液。当所用硅源为可溶于有机溶剂的硅源，如正硅酸乙脂、三甲基硅醇、四乙酰氧基硅烷等，先溶解于有机溶剂，如乙醇、笨、丙酮等或混合溶液中，再以乙醇-水进行定容，形成前驱液。前驱液再与一定重量比的氧化镁原料在球磨机中混合，制备成浆料，从而完成硅元素的均匀掺杂。此浆料再进行喷雾造粒、压制成型、烧结等工序，制备成微量硅元素掺杂的氧化镁烧结体靶材。
实施例1
将10g九水硅酸钠溶解于100ml去离子水中，再定容到500ml，即硅源前驱液；取50ml前驱液与100g氧化镁、500ml去离子水在行星式球磨机中混合30分钟，即可形成1000ppm硅掺杂的氧化镁浆料；再将此浆料制备成氧化镁烧结体靶材，即得到1000ppm硅掺杂氧化镁烧结体靶材。
实施例2：
将7.4g正硅酸乙脂溶解于50ml乙醇中，再用去离子水定容到500ml，即硅源前驱液；取50ml前驱液与100g氧化镁、500ml去离子水在行星式球磨机中混合30分钟，即可形成1000ppm硅掺杂的氧化镁浆料，再将此浆料制备成氧化镁烧结体靶材，即得到1000ppm硅掺杂氧化镁烧结体靶材。
以上内容是结合优选技术方案对本发明所做的进一步详细说明，不能认定发明的具体实施仅限于这些说明。对本发明所属技术领域的普通技术人员来说，在不脱离本发明的构思的前提下，还可以做出简单的推演及替换，都应当视为本发明的保护范围。

Claims (3)

1.一种氧化镁烧结体靶材的微量硅元素均匀掺杂方法，其特征在于，将硅源溶解制备成前驱液；再与一定重量比的氧化镁原料在球磨机中混合，制备成浆料，从而完成硅元素的均匀掺杂；此浆料再进行喷雾造粒、压制成型、烧结等工序，制备成微量硅元素掺杂的氧化镁烧结体靶材。
2.根据权利要求1所述的一种氧化镁烧结体靶材的微量硅元素均匀掺杂方法，其特征在于，所用硅源为可溶于水的如硅酸钠、硅酸、硅酸钾、九水硅酸钠等，直接用去离子水溶解，再进行定容，形成前驱液。
3.根据权利要求1所述的一种氧化镁烧结体靶材的微量硅元素均匀掺杂方法，其特征在于，所用硅源为可溶于有机溶剂的硅源，如正硅酸乙脂、三甲基硅醇、四乙酰氧基硅烷等，先溶解于有机溶剂，再以乙醇-水进行定容，形成前驱液。
CN201510931180.XA 2015-12-15 2015-12-15 一种氧化镁烧结体靶材的微量硅元素均匀掺杂方法 Pending CN105503159A (zh)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108341659A (zh) * 2018-03-05 2018-07-31 福建省德化县驰宇陶瓷有限公司 一种氧化镁干压瓷制品的制作工艺
CN108610022A (zh) * 2018-06-20 2018-10-02 江苏瑞尔光学有限公司 一种防水光学镀膜靶材及其制备方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108341659A (zh) * 2018-03-05 2018-07-31 福建省德化县驰宇陶瓷有限公司 一种氧化镁干压瓷制品的制作工艺
CN108341659B (zh) * 2018-03-05 2020-09-04 福建省德化县驰宇陶瓷有限公司 一种氧化镁干压瓷制品的制作工艺
CN108610022A (zh) * 2018-06-20 2018-10-02 江苏瑞尔光学有限公司 一种防水光学镀膜靶材及其制备方法

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