CN105493299B - 具有带有至少一个高阻挡层的多量子阱的光电子半导体芯片 - Google Patents

具有带有至少一个高阻挡层的多量子阱的光电子半导体芯片 Download PDF

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Publication number
CN105493299B
CN105493299B CN201480042009.7A CN201480042009A CN105493299B CN 105493299 B CN105493299 B CN 105493299B CN 201480042009 A CN201480042009 A CN 201480042009A CN 105493299 B CN105493299 B CN 105493299B
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opto
barrier
semiconductor chip
layer
type semiconductor
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Chinese (zh)
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CN105493299A (zh
Inventor
伊瓦尔·通林
费利克斯·恩斯特
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
CN201480042009.7A 2013-07-25 2014-07-22 具有带有至少一个高阻挡层的多量子阱的光电子半导体芯片 Active CN105493299B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102013107969.5A DE102013107969B4 (de) 2013-07-25 2013-07-25 Optoelektronischer Halbleiterchip
DE102013107969.5 2013-07-25
PCT/EP2014/065750 WO2015011155A1 (de) 2013-07-25 2014-07-22 Optoelektronischer halbleiterchip mit einem mehrfach-quantentopf mit mindestens einer hochbarrierenschicht

Publications (2)

Publication Number Publication Date
CN105493299A CN105493299A (zh) 2016-04-13
CN105493299B true CN105493299B (zh) 2018-02-06

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CN201480042009.7A Active CN105493299B (zh) 2013-07-25 2014-07-22 具有带有至少一个高阻挡层的多量子阱的光电子半导体芯片

Country Status (5)

Country Link
US (2) US9722140B2 (de)
JP (1) JP6113363B2 (de)
CN (1) CN105493299B (de)
DE (1) DE102013107969B4 (de)
WO (1) WO2015011155A1 (de)

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* Cited by examiner, † Cited by third party
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DE102014117611A1 (de) 2014-12-01 2016-06-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
DE102016101046A1 (de) * 2016-01-21 2017-07-27 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
JP6477642B2 (ja) * 2016-09-23 2019-03-06 日亜化学工業株式会社 発光素子
US11093667B2 (en) * 2017-05-22 2021-08-17 Purdue Research Foundation Method and system for realistic and efficient simulation of light emitting diodes having multi-quantum-wells
DE102019100625A1 (de) * 2019-01-11 2020-07-16 Osram Opto Semiconductors Gmbh Optoelektronisches halbleiterbauelement mit mehrfach-quantentopfstruktur und optoelektronische halbleitervorrichtung

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DE102011115312B4 (de) 2011-09-29 2022-03-10 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterschichtenfolge, optoelektronischer Halbleiterchip und Verfahren zur Herstellung einer Halbleiterschichtenfolge
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CN102822995A (zh) * 2010-02-03 2012-12-12 克里公司 带具有变化的阱厚度的多量子阱结构的基于iii族氮化物的发光二极管结构
CN102130246A (zh) * 2011-01-14 2011-07-20 映瑞光电科技(上海)有限公司 多量子阱结构、发光二极管和发光二极管封装件

Also Published As

Publication number Publication date
CN105493299A (zh) 2016-04-13
JP2016527721A (ja) 2016-09-08
US20170309777A1 (en) 2017-10-26
US20160181471A1 (en) 2016-06-23
WO2015011155A1 (de) 2015-01-29
JP6113363B2 (ja) 2017-04-12
US10121936B2 (en) 2018-11-06
DE102013107969A1 (de) 2015-01-29
US9722140B2 (en) 2017-08-01
DE102013107969B4 (de) 2020-04-09

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