CN105489757B - Phase-change memory structure and its manufacturing method - Google Patents
Phase-change memory structure and its manufacturing method Download PDFInfo
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- CN105489757B CN105489757B CN201510886052.8A CN201510886052A CN105489757B CN 105489757 B CN105489757 B CN 105489757B CN 201510886052 A CN201510886052 A CN 201510886052A CN 105489757 B CN105489757 B CN 105489757B
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
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- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Abstract
The invention discloses a kind of phase-change memory structures and its manufacturing method.Phase-change memory structure includes an active member, once electrode, a wall shape heater, a phase change layer, a top electrode and an insulating layer.Lower electrode coupling active member, and electrode under wall shape heater contacts.Wall shape heater has one side and a metope, and side extends along a first direction, and metope extends along a second direction, and first direction and second direction are interlaced with each other.One phase change layer is located at the side of wall shape heater, and phase change layer is extended in a first direction with one side, and the side of the side contact phase change layer of wall shape heater.Top electrode is located on phase change layer, and insulating layer covering wall shape heater and phase change layer.The method can manufacture the wall shape heater with very small feature size, without complicated registration mechanism, and the contact area very little between wall shape heater and phase change layer, therefore the reset current of phase-change memory is very low.
Description
Technical field
The present invention relates to a kind of phase-change memory structure and its manufacturing methods.
Background technology
Electronic product (such as：Mobile phone, tablet computer and digital camera) often with the memory cell for having storage data.
Know that memory cell can pass through the storage node storage information on memory cell.Wherein, phase-change memory utilizes memory body
The resistance states (such as high value and low resistance) of element store information.Memory cell can have one can be in different phase
(such as：Crystalline phase and amorphous phase) between the material converted.Different phase causes memory cell to have the resistance of different resistance values
State, for representing the different numerical value of storage data.
Phase-change memory unit in operation, can apply electric current so that the temperature of memory cell is promoted to change material
Phase.The memory cell that the heater of known phase-change memory cell is coupled with it has larger contact area, this
The defects of surface hole defect will be increased, and also relatively slowly (conversion between high value and low resistance is not fast enough for the speed of heating and cooling
Speed), the relatively required magnitude of current is also larger.However, traditional technology needs to have in the processing procedure of the heater of manufacture small area of contact
Accurate registration mechanism, this will make processing procedure complicated with uncontrollable, the opposite cost for promoting phase-change memory.Therefore, industry
There is an urgent need for a kind of novel and efficient processing procedures to prepare phase-change memory.
Invention content
It is an aspect of the invention to provide a kind of manufacturing method of phase-change memory structure, comprise the steps of.Shape
Electrode and a dielectric layer are covered into one first insulating layer；The first insulating layer is patterned to form a pattern in lower electrode with being situated between
In electric layer；Formed a heating material layer conformally the side wall of overlay pattern and not by electrode under the part of pattern covers with part be situated between
Electric layer；Part heating material layer is anisotropically removed, to form a strip heating material layer in the side wall of pattern；Remove part
Strip heating material layer is to form multiple wall shape heaters；And cut down the thickness of these wall shape heaters.
In one or more embodiments of the present invention, the side wall of pattern is Chong Die with lower electrode in upright projection direction.
In one or more embodiments of the present invention, pattern is an opening.
In one or more embodiments of the present invention, pattern is an insulating part, and the insulating part is a part of first
Insulating layer.
In one or more embodiments of the present invention, remove part strip heating material layer and heated with forming multiple wall shapes
The step of device, includes：Form planarization layer covering strip heating material layer；It is formed on a patterning photoresist layer to planarization layer；
To pattern photoresist layer as shade, part planarization layer and part strip heating material layer are removed.
In one or more embodiments of the present invention, the step of thickness for cutting down these wall shape heaters, includes：It is formed
One second insulating layer covers these wall shape heaters；And grinding second insulating layer, the first insulating layer and these wall shape heaters
To cut down the thickness of these wall shape heaters.
In one or more embodiments of the present invention, the manufacturing method of phase-change memory structure, also comprising following step
Suddenly.Second insulating layer is patterned to form the one side of opening exposure wall shape heater；A phase change layer is formed into being open；
And it forms one and powers on best phase change layer.
It is another aspect of the invention to provide a kind of phase-change memory structure, comprising an active member, once electrode,
One wall shape heater, a phase change layer, a top electrode and an insulating layer.Lower electrode coupling active member, and wall shape heater
The lower electrode of contact.Wall shape heater has one side and a metope, and side extends along a first direction, and metope is along a second party
To extension, and first direction and second direction are interlaced with each other.One phase change layer is located at the side of wall shape heater, phase change layer tool
There is one side to extend in a first direction, and the side of the side contact phase change layer of wall shape heater.Top electrode is located at phase change
On layer, and insulating layer covering wall shape heater and phase change layer.
In one or more embodiments of the present invention, the manufacturing method of phase-change memory structure, also comprising following step
Suddenly.Planarization layer covering wall shape heater is re-formed, and is formed on a patterning photoresist layer to planarization layer.Etched part later
Divide planarization layer and wall shape heater, and remove planarization layer and patterning photoresist layer.
In one or more embodiments of the present invention, the side of phase change layer extends to contact at least along a first direction
The side of two wall shape heaters.
In one or more embodiments of the present invention, the thickness of wall shape heater is between 30 to 50 nanometers, and wall
The width of shape heater is between 1 to 5 nanometer.
Above-mentioned phase-change memory structure can promote the efficiency of heating phase change layer, and then promote phase-change memory
Read or write speed.
Description of the drawings
For allow the present invention above and other purpose, feature, advantage and embodiment can be clearer and more comprehensible, appended attached drawing it is detailed
Carefully it is described as follows：
Figure 1A is the diagrammatic cross-section according to the phase-change memory structure of the several embodiments of the present invention；
Figure 1B is painted the stereoscopic schematic diagram of part-structure in Figure 1A；
Fig. 2 B, 3,4,5,6B, 7B, 8B, 9B, 10B are the manufacture phase-change memory according to the several embodiments of the present invention
Method, in processing procedure each stage along the diagrammatic cross-section of AA hatching lines；
Fig. 2A is painted the upper schematic diagram of the processing procedure intermediate structure of Fig. 2 B；
Fig. 6 A, 7A, 8A, 9A, 10A be painted respectively Fig. 6 B, 7B, 8B, 9B, 10B processing procedure intermediate structure upper schematic diagram；
Fig. 6 C, 7C, 8C, 9C, 10C are respectively processing procedure intermediate structure the cuing open along BB hatching lines of Fig. 6 A, 7A, 8A, 9A, 10A
Face schematic diagram；And
Figure 11,12 and 13 are the method for the manufacture phase-change memory according to other embodiment of the present invention, each in processing procedure
A stage along AA hatching lines diagrammatic cross-section.
Specific embodiment
As described in prior art, the contact between heater and phase-transition material in current existing phase-change memory
Area is larger, and the reset current for making phase-change memory is higher.Although using lithographic and etch process, it is smaller to form top area
Column heater, contacted with each other with the top surface of column heater with phase-transition material, but micro-photographing process still has its limit, and lose
The difficulty for scribing journey is also high, therefore is not easy to be precisely controlled the characteristic size of column heater.
Therefore, the present invention provides a kind of phase-change memory structure, includes wall shape heater and phase change layer.Wall shape heats
Contact area between device and phase change layer is about that the width of wall shape heater is multiplied by thickness.In the very thin thickness of wall shape heater
In the case of, contact area can be reduced, makes phase-change memory structure that there is extremely low reset current, it is previous so as to effectively solve
The problem of described in technology.In addition, the processing procedure for forming the phase-change memory structure of the present invention will not meet with the limit of micro-photographing process
And etch process difficulty the problems such as.In other words, the processing procedure of wall shape heater of the invention is relatively easy to control, and can effectively control it
Characteristic size.It will be detailed below the phase-change memory structure of the present invention and its various embodiments of manufacturing method.
Figure 1A is the diagrammatic cross-section according to the phase-change memory structure 100 of the several embodiments of the present invention.Such as Figure 1A institutes
Show, phase-change memory structure 100 includes active member 120, lower electrode 140, insulating layer 150, wall shape heater 160, phase transformation
Change layer 165 and top electrode 170.Active member 120 is located in substrate 110, and in the present embodiment, and active member 120 is
Transistor (transistor), it includes source electrode 122, drain electrode 124 and grid 126, source electrode 122 is to be located at substrate with drain electrode 124
In 110 doped region, and grid 126 is set on substrate 110 and is located between source electrode 122 and drain electrode 124.In its of the present invention
In his some embodiments, also there is shallow trench isolation (shallow trench isolation, STI) structure in substrate 110
112 with electrically isolated adjacent active member 120.In the other parts embodiment of the present invention, the material of substrate 110 includes
Silicon or other semiconductor elements, such as germanium or iii-v element, but not limited to this, and the material packet of shallow slot isolation structure 112
Silicon oxide-containing, silicon nitride, silicon oxynitride or other suitable insulating materials.
Phase-change memory 100 also has one first dielectric layer 130 and one second dielectric layer 145.First dielectric layer 130
In on substrate 110 and covering active member 120, and the second dielectric layer 145 is located on the first dielectric layer 130.First dielectric layer 130
In there are multiple conductive contacts 135, certain conductive contacts 135 are located at 124 top of drain electrode and contact drain electrode 124, and other are certain
Conductive contact 135 is then located at 122 top of source electrode and contacts source electrode 122, to be connected to the active member 120 in substrate 110.At this
In some embodiments of invention, the first dielectric layer 130 includes silica, silicon nitride, silicon oxynitride or other suitable materials,
And the second dielectric layer 145 includes silicon nitride or other suitable materials.
Lower electrode 140 is then located on conductive contact 135 to couple active member 120 through conductive contact 135.In the present invention
Section Example in, lower electrode 140 include titanium, titanium nitride, tantalum nitride, TiAlN, aluminium nitride tantalum, or combination.Wall shape
Heater 160 is located on lower electrode 140 and contacts lower electrode 140, and the thickness T4 and width W1 of wall shape heater 160 are smaller more
It is good.In some embodiments of the present invention, the thickness T4 of wall shape heater 160 is between 30 to 50 nanometers, and wall shape adds
The width W1 of hot device 160 is not limited thereto between 1 to 5 nanometer.In some embodiments of the present invention, wall shape
Heater 160 includes titanium, titanium nitride, tantalum nitride, TiAlN, aluminium nitride tantalum or combination.
Then please refer to Figure 1A and Figure 1B, Figure 1B is painted the stereoscopic schematic diagram of part-structure in Figure 1A.Such as Figure 1B institutes
Showing, there is wall shape heater 160 an one side 160a and metope 160b, wherein side 160a to extend along a first direction D1, and
Metope 160b extends along a second direction D2, and first direction D1 and second direction D2 are interlaced with each other.It is real in the part of the present invention
It applies in mode, first direction D1 and second direction D2 is substantially mutually perpendicular to.Phase change layer 165 is then located at wall shape heater 160
Side, wherein phase change layer 165 has one side 165a D1 extends along the first direction, and the side of wall shape heater 160
160a contacts the side 165a of phase change layer 165.Specifically, when active member 120 provides current to lower electrode 140, electricity
Stream can be sequentially by lower electrode 140 and wall shape heater 160, and enter phase change layer from the side 160a of wall shape heater 160
165.Since phase change layer 165 is heated and/or cooled down, and then makes it in knot by the reason of Ohmic heating (ohmic heating)
Crystalline phase and noncrystalline alternate conversion, and the different numerical value of data can be stored.If between wall shape heater 160 and phase change layer 165
Contact area is smaller, you can allows higher current density, increases the conversion speed in phase change layer 165 between phase, and carries
Rise the efficiency of heating surface.
By taking present embodiment as an example, wall shape heater 160 is contacted with its side 160a with phase change layer 165, therefore wall shape
Contact area between heater 160 and phase change layer 165 is that the width W1 of wall shape heater 160 is multiplied by thickness T4.It is worth
One is mentioned that, the top area of the column heater of existing minimum is (about a diameter of 28~30 nanometers of about 700 square nanometers
The top area of cylindric heater).If the thickness T4 of wall shape heater 160 is 30 nanometers, width W1 is 5 nanometers, then contact surface
Product is about 150 square nanometers, much smaller than the top area of existing minimum column heater.If the thickness T4 of wall shape heater 160 is
50 nanometers, width W1 is 5 nanometers, then contact area is about 250 square nanometers, is also smaller than the top surface of existing minimum column heater
Product.Thus, it can make phase-change memory structure 100 that there is extremely low reset current.
In some embodiments of the present invention, phase change layer 165 includes Ge-Sb-Te (Ge2Sb2Te5、 Ge3Sb6Te5,
GST), N doping Ge-Sb-Te (nitrogen-doped Ge2Sb2Te5), antimony telluride (Sb2Te), germanium antimony (GeSb), indium doping
Antimony telluride (In-doped Sb2Te) or combination.
In the section Example of the present invention, as shown in Figure 1B, the side 165a of phase change layer 165 is more along a first direction
D1 extends to contact the side 160a of at least two wall shape heaters 160.
It please go back refering to Figure 1A, top electrode 170 is located at 165 top of phase change layer and contacts phase change layer 165.In the present invention
Some embodiments in, top electrode 170 include titanium, titanium nitride, tantalum nitride, TiAlN, aluminium nitride tantalum, or combination.Absolutely
Edge layer 150 then covers wall shape heater 160 and phase change layer 165, and the upper surface of insulating layer 150 and the upper table of top electrode 170
Face is coplanar.Herein specifically, phase change layer 165 is positioned at the side of wall shape heater 160, with the embodiment party of Figure 1A
For formula, phase change layer 165 is respectively positioned on wall shape heater 160 and 150 rear of insulating layer with top electrode 170.Due to Figure 1A's
In visual angle, phase change layer 165 can be covered without as it can be seen that special herein with top electrode 170 by wall shape heater 160 and insulating layer 150
Illustrate to explicitly indicate that its position relationship between wall shape heater 160 and insulating layer 150 with dotted line.
In some embodiments of the present invention, the material that 150 and second dielectric layer 145 of insulating layer is selected can reduce phase transformation
Change memory structure 100 and generate the doubt of electromigration effect (electromigration) in running, and prevent phase change layer
165 volatilization, and effectively promote the reliability and service life of phase-change memory structure 100.Implement in the part of the present invention
In mode, insulating layer 150 includes silicon nitride or other suitable materials.In the other parts embodiment of the present invention, insulation
150 and second dielectric layer 145 of layer is silicon nitride layer.
In some embodiments of the present invention, phase-change memory structure 100 is also powered on comprising the covering of protective layer 180
Pole 170 and insulating layer 150.Protective layer 180 can be single or multi-layer structure.In some embodiments of the present invention, protective layer
180 include oxide, nitride, nitrogen oxides or combination, such as silica, silicon nitride, silicon oxynitride or combination.
In some embodiments of the present invention, phase-change memory structure 100 also includes 190 coupling of vertical interconnecting structure
Connect electrode 170 or lower electrode 140.Specifically, certain vertical interconnecting structures 190 by protective layer 180 to contact top electrode
170, and other certain vertical interconnecting structures 190 then by protective layer 180 with insulating layer 150 to contact down electrode 140.
In some embodiments of the present invention, the material of conductive contact 135 and vertical interconnecting structure 190 include metal,
Metallic compound or combination, such as titanium, tantalum, tungsten, aluminium, copper, molybdenum, platinum, titanium nitride, tantalum nitride, ramet, tantalum nitride silicon, nitrogen
Change tungsten, molybdenum nitride, nitrogen oxidation molybdenum, ruthenium-oxide, titanium aluminium, TiAlN, carbon tantalum nitride, other suitable material or combinations.
Please also refer to Figure 1A, before the process stage shown in progress Fig. 2 B, 3,4,5,6B, 7B, 8B, 9B, 10B, first carry
Then substrate 110 forms active member 120 in the substrate 110 and its top.In some embodiments of the present invention, profit
Source electrode 122 and drain electrode 124 are formed with dopping process, deposition, lithographic and etch process is recycled to form grid 126.It is formed actively
The step of element 120, also may include forming gate dielectric layer (not being painted), clearance wall (not indicating), shallow through suitable process technique
Doped-drain and/or other elements.
It is formed after active member 120, as shown in Figure 1A, forms the first dielectric layer 130 covering active member 120, then shape
Into the second dielectric layer 145 above the first dielectric layer 130.Later, perforation is formed through the first dielectric layer 130 and the second dielectric layer
145, with expose a part for active member 120 (such as：124) source electrode 122 is with draining.In some embodiments of the present invention
In, the first dielectric layer 130 and the second dielectric layer 145 are formed using chemical vapor deposition or other suitable film deposition techniques,
And it is formed using lithographic and etch process, Laser drill processing procedure or other suitable processing procedures through the first dielectric layer 130 and second
The perforation of dielectric layer 145.
It is formed after perforation, as shown in Figure 1A, conductive contact 135 is formed in perforation, to couple active member 120.
In some embodiments of the present invention, chemical vapor deposition, physical vapour deposition (PVD), atomic layer deposition, rotary coating process are utilized
Or other suitable processing procedures form conductive contact 135.Then it re-forms lower electrode 140 and couples active member 120.The present invention's
In some embodiments, chemical vapor deposition, physical vapour deposition (PVD), atomic layer deposition, rotary coating process or other conjunctions are utilized
Suitable formation processing procedure forms lower electrode 140.
After electrode under formation, Fig. 2 B, 3,4,5, the process stage of 6B, 7B, 8B, 9B, 10B are sequentially carried out, it is above-mentioned attached
Figure is along the sectional view of the AA hatching lines shown in Fig. 2A in each process stage, and in fig. 2, D1 prolongs AA hatching lines along the first direction
It stretches.Please the upper schematic diagram of the processing procedure intermediate structure of Fig. 2 B is painted refering to Fig. 2A, Fig. 2A while refering to Fig. 2 B.As Fig. 2A with
Shown in Fig. 2 B, lower 140 and second dielectric layer 145 of electrode of the first insulating layer 210 covering is initially formed, then re-forms patterning photoresist
On 220 to the first insulating layer 210 of layer.Specifically, the lower electrode 140 and second of the first covering of the first insulating layer of blanket-deposited 210
Dielectric layer 145.Then again by photoresist layer rotary coating to the first insulating layer 210, and light shield (is not painted) with Exposure mode
Pattern be transferred to photoresist layer, with formed patterning photoresist layer 220 expose the first insulating layer 210 upper surface.The present invention's
In some embodiments, using physical vapour deposition (PVD), chemical vapor deposition, atomic layer deposition, other suitable deposition manufacture process or
A combination thereof depositing first insulator layer 210.
Then in figure 3, the first insulating layer 210 is patterned to form a pattern in lower 140 and second dielectric layer 145 of electrode
On.In the embodiment of fig. 3, pattern is an opening 212, specifically, patterning photoresist layer 220 is used as shade, using dry
Etching or wet etching processing procedure remove the first insulating layer 210 of part, to form the lower electrode 140 of 212 expose portions of opening and portion
The second dielectric layer 145 divided, and the side wall of opening 212 can be overlapped with lower electrode 140 in upright projection direction.The present invention's
In some embodiments, suitable solvent can be used to remove patterning photoresist layer 220 after patterning the first insulating layer 210.
Later in Fig. 4, a heating material layer 410 conformally side wall of overlay pattern and not by the portion of pattern covers is formed
Electrode 140 and the second dielectric layer of part 145 under point.In the embodiment illustrated in fig. 4, heating material layer 410 forms thickness T2 in the
At the upper surface of one insulating layer 210 and the bottom of opening 212, and thickness T1 is formed simultaneously in the side-walls of opening 212, wherein thick
It spends T1 and is more than thickness T2.It should be noted that thickness T1 described herein and T2 be with the second dielectric layer 145 in vertical direction
Thickness.It is with physical vaporous deposition, chemical vapour deposition technique, atomic layer deposition method in some embodiments of the present invention
Or thermal oxide mode deposition hot material, make the heating material layer to be formed 410 that there is good step coverage, and can be uniform
The side wall of covering opening 212.
Referring next to Fig. 5, part heating material layer 410 is anisotropically removed, to form a strip heating material layer 412
In the side wall of pattern.In the embodiment of Fig. 5, using a dry ecthing procedure with the reduction heating material layer 410 of anisotropic
With the thickness of the second dielectric layer 145 in vertical direction, and will positioned at the upper surface of the first insulating layer 210 with opening 212 bottom
The heating material layer 410 at place removes.However, positioned at opening 212 side-walls heating material layer 410 because having larger thickness T1
Without being completely removed, the remaining strip heating material layer 412 of energy is in the side wall of opening 212.Strip heating material as shown in Figure 5
Layer 412 has a width W1, and D1 extends along a first direction, and the wall shape that the size of wherein width W1 is associated with being subsequently formed adds
Contact area between hot device and phase change layer, will be in subsequent detailed.In addition, strip heating material layer 412 also has a thickness T3,
It is about roughly equal to aforementioned thickness T1 and subtracts thickness T2.In some embodiments of the present invention, erosion that dry ecthing procedure uses
Carving gas may include sulfur hexafluoride, helium, carbon tetrafluoride, fluoroform, hydrogen bromide, chlorine, oxygen, nitrogen, or combination, but
The present invention is not limited.
Then the process stage shown in Fig. 6 B and Fig. 7 B is carried out, these diagrams, which are painted, removes part strip heating material layer
412 to form multiple wall shape heater 160 the step of.The processing procedure intermediate structure that Fig. 6 B are Fig. 6 A is illustrated along the section of AA hatching lines
Figure, and the processing procedure intermediate structure that Fig. 6 C are Fig. 6 A is along the diagrammatic cross-section of BB hatching lines.Wherein in fig. 6, AA hatching lines are along
One direction D1 extends, and D2 extends BB hatching lines in a second direction, and substantially vertical (that is, the first direction D1 of AA hatching lines and BB hatching lines
It is substantially vertical with second direction D2).
As shown in Fig. 6 A and Fig. 6 C, the strip heating material layer 412 of formation is along second direction D2 across several lower electrodes
140.Then more strip heating material layer 412 will be covered to be formed on fluidity material rotary coating to the first insulating layer 210
Planarization layer 610, and partial free-flowing material more 212 fills up opening.The property of free-flowing material causes planarization layer
610 directly have the upper surface of substantial planar, and can omit CMP step.Then, a patterning photoresist is re-formed
Layer 620 on planarization layer 610, wherein the fabrication steps for forming patterning photoresist layer 620 see it is aforementioned, herein no longer in detail
It states.As shown in Fig. 6 A and Fig. 6 C, patterning photoresist layer 620 there is a length L1 to extend along second direction D2, and this length L1
Substantially greater than descend the cross-sectional width d1 of electrode 140.In some embodiments of the present invention, free-flowing material includes amorphous carbon
(amorphous carbon)。
Later in figure 7b, it to pattern photoresist layer 620 as shade, removes part planarization layer 610 and adds with part strip
Hot material layer 412.Fig. 7 B be Fig. 7 A processing procedure intermediate structure along AA hatching lines diagrammatic cross-section, and Fig. 7 C be Fig. 7 A processing procedure
Intermediate structure along BB hatching lines diagrammatic cross-section.In this step, patterning photoresist layer 620 is as shade, with wet etching or
Dry ecthing procedure removes the planarization layer 610 of part, to expose the strip heating material layer 412 under it.This wet etching or dry corrosion
The expose portion that journey will continue to remove strip heating material layer 412 is scribed, but the strip immediately below patterning photoresist layer 620 adds
Hot material layer 412 is not removed when protected.Whereby, by script across the strip heating material layer 412 of several lower electrodes 140
It is separated into independent wall type heater 160.As shown in Figure 7 A, each wall type heater 160 has side 160a and metope 160b,
Wherein side 160a has a width W1, and D1 extends along the first direction, and metope 160b has length L1 D2 in a second direction
Extension, and each wall type heater 160 is corresponded to a lower electrode 140.It should be noted that, Fig. 7 A is penetrate the second insulation herein
The perspective view of layer 710, wherein being represented by dotted lines by the wall type heater 160 that second insulating layer 710 covers, to explicitly indicate that it
Relative position.Because wall type heater 160 is defined by patterning photoresist layer 620, to pattern photoresist layer 620 as shade and
The wall type heater 160 of separation, metope 160b substantially can also have length L1.In addition, wall type heater 160 adds with strip
Hot material layer 412 has identical width W1.
In addition, Fig. 7 A to Fig. 7 C are more painted the step of cutting down these wall shape 160 thickness of heater.Forming wall type heater
After 160, re-form a second insulating layer 710 and cover these wall shape heaters 160.And as previously mentioned, these wall shape heaters 160
With thickness T3.The present invention some embodiments in, using physical vapour deposition (PVD), chemical vapor deposition, atomic layer deposition,
Other suitable deposition manufacture process or combination deposition second insulating layers 710.In the other parts embodiment of the present invention, first
Insulating layer 210 and second insulating layer 710 are preferably silicon nitride or other suitable materials with prepared by identical material, but
It is not limited.
Later in the fig. 8b, second insulating layer 710, the first insulating layer 210 are ground with these wall shape heaters 160 to cut down
The thickness of wall shape heater 160.The processing procedure intermediate structure that Fig. 8 B are Fig. 8 A is along the diagrammatic cross-section of AA hatching lines, and Fig. 8 C are
The processing procedure intermediate structure of Fig. 8 A along BB hatching lines diagrammatic cross-section.As previously described in Figure 1B, the thickness of wall shape heater 160
Degree will be associated with its contact area between phase change layer.In this step, part is removed using chemical mechanical milling method
Wall shape heater 160, so that its thickness is reduced from T3 to T4.It and can simultaneous grinding second insulating layer 710 in this fabrication steps
With the first insulating layer 210, make 710 and first insulating layer 210 of second insulating layer that there is the upper surface of general planar.Pass through aforementioned system
Journey can make wall shape heater 160 have very thin thickness T4, and effectively reduce wall shape heater 160 and the phase transformation being subsequently formed
Change the contact area between layer.In addition, insulating layer 150 is collectively formed with second insulating layer 710 in the first insulating layer 210 after grinding
Adjacent wall shape heater 160 is isolated.
Then the process stage shown in Fig. 9 B and Figure 10 B is carried out, these diagrams are painted to form phase change layer 165 with powering on
The step of pole 170.Fig. 9 B be Fig. 9 A processing procedure intermediate structure along AA hatching lines diagrammatic cross-section, and Fig. 9 C be Fig. 9 A processing procedure
Intermediate structure along BB hatching lines diagrammatic cross-section.In Fig. 9 A to Fig. 9 C, patterned insulation layer 150 is with one opening 910 of formation
The side 160a of exposure wall shape heater 160.In detail, the position of opening 910 is first defined using a patterning photoresist layer,
Then the part second insulating layer 710 in insulating layer 150 is removed in a manner of dry ecthing or wet etching and forms opening 910, with sudden and violent
Reveal the side 160a of heater 160.In some embodiments of the present invention, this patterning process more removes the wall of part simultaneously
Shape heater 160, as shown in Fig. 9 A and Fig. 9 C, the metope 160b of wall shape heater 160 is reduced to length L2 from length L1.But
In the other parts embodiment of the present invention, patterning process can not remove wall shape heater 160, make wall shape heater 160
Metope 160b still maintains length L1.
Figure 10 B be Figure 10 A processing procedure intermediate structure along AA hatching lines diagrammatic cross-section, and Figure 10 C be Figure 10 A system
Journey intermediate structure along BB hatching lines diagrammatic cross-section.Figure 10 A to Figure 10 C are painted to be formed in phase change layer 165 to opening 910,
And the step in formation top electrode 170 to phase change layer 165.Specifically, first blanket-deposited phase-transition material extremely insulate
On layer 150 in opening 910, then redeposited conductive material is on phase-transition material.Later, a figure is carried out to phase-transition material
Patterning process, with a remaining phase change layer 165 in opening 910.Wall shape heater 160 is exposed to the side in opening 910
160a can contact this phase change layer 165, and the area of this side 160a is that the thickness T4 of wall shape heater 160 is multiplied by width
W1.As previously mentioned, heating material layer 410 is removed by anisotropic to prepare the strip heating material layer with minimal width W1
412 (please referring to Fig. 5), and make wall shape heater 160 that there is minimum thickness T4 (please referring to Fig. 8 A to Fig. 8 C) with lapping mode.
Therefore, it is not necessary to that connecing between phase change layer 165 and wall shape heater 160 can be greatly decreased using complicated alignment or etching mechanism
Contacting surface is accumulated, and promotes process efficiency.
In addition, partial conductive material is removed and forms top electrode 170 on phase change layer 165 simultaneously.Spy is needed herein
Do not mentionlet alone it is bright, in the visual angle of Figure 10 B, the phase change layer 165 of part can be covered by wall shape heater 160 and insulating layer 150 without
As it can be seen that special herein illustrate to explicitly indicate that its position relationship between wall shape heater 160 and insulating layer 150 with dotted line.
Figure 1A is returned to, it is more redeposited identical with insulating layer 150 exhausted after top electrode 170 and phase change layer 165 is formed
On edge material to insulating layer 150, so that insulating layer 150 has enough thickness covering phase change layer 165, top electrode 170 and wall
Shape heater 160.Planarization process more is carried out to insulating layer 150 later, to allow upper surface and the top electrode 170 of insulating layer 150
Upper surface to be coplanar.After planarization process, more form protective layer 180 and cover insulating layer 150 and top electrode 170.It connects
It and multiple perforation is more formed in a manner of lithography, some of which is punched through protective layer 180 to expose top electrode 170, and another
Outer certain perforation are then by protective layer 180, insulating layer 150 expose time electrode 140.Later conduction is deposited using suitable mode
Material to prepare vertical interconnecting structure 190, and completes the preparation of phase-change memory structure 100 in these perforation.It is therein
Certain vertical interconnecting structures 190 contact top electrodes 170, with via top electrode 170, phase change layer 165, wall shape heater 160,
Lower electrode 140 is electrically connected to the drain electrode 124 of active member 120 with conductive contact 135.On the other hand, other are certain vertical mutual
Connection structure 190 then contacts lower electrode 140, to be electrically connected to active member 120 via lower electrode 140 and conductive contact 135
Source electrode 122.
After preparing the flow of phase-change memory structure in some embodiments for understanding the present invention, subsequent figures are more said
Bright the step of strip heating material layer 412 is formed in a manner of other processing procedures.Figure 11,12 and 13 are according to other implementations of the present invention
The method of the manufacture phase-change memory of mode, in processing procedure each stage along the diagrammatic cross-section of AA hatching lines.Figure 11 is painted figure
Step of the first insulating layer 210 of case Fig. 2 B with one pattern covers of formation on lower 140 and second dielectric layer 145 of electrode.
In the embodiment of Figure 11, pattern is an insulating part 214, and this insulating part 214 is the first a part of insulating layer 210.In addition,
The side wall of insulating part 214 can be overlapped with lower electrode 140 in upright projection direction.
Later in fig. 12, a heating material layer 410 conformally side wall of overlay pattern and not by pattern covers is formed
The lower electrode 140 in part and the second dielectric layer of part 145.In the embodiment of Figure 12, heating material layer 410 formed thickness T2 in
On the upper surface of insulating part 214 and the second dielectric layer 145 and lower electrode 140, and thickness T1 is formed simultaneously in insulating part 214
Side-walls, wherein thickness T1 are more than thickness T2.It should be noted that thickness T1 described herein and T2 is and the second dielectric layer
145 thickness in vertical direction.It is with physical vaporous deposition, chemical vapor deposition in some embodiments of the present invention
Method, atomic layer deposition method or thermal oxide mode deposition hot material make the heating material layer to be formed 410 that there is good ladder to cover
Gai Xing, and can uniformly cover the side wall of insulating part 214.
Referring next to Figure 13, part heating material layer 410 is anisotropically removed, to form a strip heating material layer
412 in the side wall of pattern.In the embodiment of Figure 13, using a dry ecthing procedure with the reduction heating material layer of anisotropic
410 and second thickness in vertical direction of dielectric layer 145, and by positioned at the upper surface of insulating part 214 and the second dielectric layer 145 with
Heating material layer 410 on lower electrode 140 removes.However, positioned at 214 side-walls of insulating part heating material layer 410 because having
Larger thickness T1 is without being completely removed, and the remaining strip heating material layer 412 of energy is on the side wall of insulating part 214.
Although the embodiment of the present invention is disclosed above, however, it is not to limit the invention, any to be familiar with this those skilled in the art,
Without departing from the spirit and scope of the present invention, when can do a little change and retouching, thus protection scope of the present invention when with
Subject to the scope of which is defined in the appended claims.
Claims (9)
1. a kind of manufacturing method of phase-change memory structure, which is characterized in that include：
It forms one first insulating layer and covers electrode and a dielectric layer；
First insulating layer is patterned to form a pattern on the lower electrode and the dielectric layer；
It forms a heating material layer and conformally covers the side wall of the pattern and not by the part of the pattern covers lower electrode and portion
Divide the dielectric layer；
The part heating material layer is anisotropically removed, to form a strip heating material layer in the side wall of the pattern；
The part strip heating material layer is removed to form multiple wall shape heaters；
It forms a second insulating layer and covers the wall shape heater；
The second insulating layer is patterned to form the one side that an opening exposes the respectively wall shape heater, which has a width
Extend along a first direction, and respectively the wall shape heater has a metope wide perpendicular to a section of the lower electrode, which has
Have a length along be parallel to the wide second direction in the section extend beyond the lower electrode and extend to the flank abutment, and should
First direction and the second direction are interlaced with each other；
It is formed in a phase change layer to the opening, wherein, which has a first side and relative to the first side
A second side, and the first side of the phase change layer is contacted with the side of the respectively wall shape heater, and the second side
Face is not in contact with the respectively wall shape heater；And
One is formed to power on the best phase change layer.
2. the manufacturing method of phase-change memory structure according to claim 1, which is characterized in that the side wall of the pattern in
Upright projection direction is Chong Die with the lower electrode.
3. the manufacturing method of phase-change memory structure according to claim 2, which is characterized in that the pattern is opened for one
Mouthful.
4. the manufacturing method of phase-change memory structure according to claim 2, which is characterized in that the pattern is an insulation
Part, and first insulating layer of the insulating part for a part.
5. the manufacturing method of phase-change memory structure according to claim 1, which is characterized in that remove the part strip
Heating material layer is included with being formed the step of multiple wall shape heaters：
It forms a planarization layer and covers the strip heating material layer；
It is formed on a patterning photoresist layer to the planarization layer；
Using the patterning photoresist layer as shade, the part planarization layer and the part strip heating material layer are removed.
6. the manufacturing method of phase-change memory structure according to claim 1, which is characterized in that form second insulation
The step of after the layer covering wall shape heater, includes：
The second insulating layer, first insulating layer are ground with the wall shape heater to cut down the thickness of the wall shape heater.
7. a kind of phase-change memory structure, which is characterized in that include：
One active member；
Once electrode couples the active member；
The one wall shape heater contacts lower electrode, the wall shape heater have one side and a metope, and the side is with a width
Extend along a first direction, and there is the metope length to extend along a second direction, and the first direction and the second direction
Interlaced with each other, wherein the metope of the wall shape heater is wide perpendicular to a section of the lower electrode, and wide along the section is parallel to
The second direction extend beyond the lower electrode and extend to and the flank abutment；And
One phase change layer is located at the side of the wall shape heater, which has a first side and relative to first side
One second side in face, and the first side of the phase change layer contacts the side of the wall shape heater, and the second side
Not in contact with the wall shape heater；
One top electrode is located on the phase change layer；And
One insulating layer covers the wall shape heater and the phase change layer.
8. phase-change memory structure according to claim 7, which is characterized in that the first side edge of the phase change layer
The side that the first direction extends to contact at least two wall shape heaters.
9. phase-change memory structure according to claim 7, which is characterized in that the thickness of the wall shape heater is between 30
To between 50 nanometers, and the width of the wall shape heater is between 1 to 5 nanometer.
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