CN105098069B - The preparation method of phase-change memory - Google Patents
The preparation method of phase-change memory Download PDFInfo
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- CN105098069B CN105098069B CN201510394649.0A CN201510394649A CN105098069B CN 105098069 B CN105098069 B CN 105098069B CN 201510394649 A CN201510394649 A CN 201510394649A CN 105098069 B CN105098069 B CN 105098069B
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- 230000015572 biosynthetic process Effects 0.000 description 4
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- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 2
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- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 2
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- CBJZJSBVCUZYMQ-UHFFFAOYSA-N antimony germanium Chemical compound [Ge].[Sb] CBJZJSBVCUZYMQ-UHFFFAOYSA-N 0.000 description 2
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Abstract
A kind of preparation method of phase-change memory, is comprised the steps of.Be initially formed a heating material layer on a dielectric layer, be subsequently formed one first cover curtain layer on heating material layer, re-form afterwards a second mask layer on the first cover curtain layer.Then patterning heating material layer, the first cover curtain layer and second mask layer, with the one side of the first cover curtain layer of exposure, and remove the cover curtain layer of part first, with expose portion heating material layer from the side of the first cover curtain layer.After second mask layer is removed, using the first cover curtain layer as shade, remove the part heating material layer of exposure to form a heater.
Description
Technical field
The present invention is about a kind of preparation method of phase-change memory.
Background technology
Electronic product is (for example：Mobile phone, tablet personal computer and digital camera) often there is the memory cell of storage data.
Know that memory cell can pass through the storage node storage information on memory cell.Wherein, phase-change memory utilizes memory body
The resistance states (such as high value and low resistance) of element store information.Memory cell can have one can be in different phase
(for example：Crystalline phase and amorphous phase) between the material changed.Different phase causes memory cell to have the resistance of different resistance values
State, for representing the different numerical value of storage data.
Phase-change memory unit can apply electric current so that the temperature of memory cell is lifted to change material in operation
Phase.The memory cell that the heater of known phase-change memory cell is coupled with it has larger contact area, this
The defect of surface hole defect will be increased, and also relatively (conversion between high value and low resistance is not fast enough slowly for the speed of heating and cooling
Speed), the relatively required magnitude of current is also larger.However, traditional technology needs tool in the processing procedure of the heater of manufacture small area of contact
Accurate registration mechanism, this will make processing procedure complicated with being difficult to control to, the cost of relative lifting phase-change memory.Therefore, industry
A kind of novel and efficient processing procedure is needed badly to prepare phase-change memory.
The content of the invention
It is an aspect of the present invention to provide a kind of preparation method of phase-change memory, comprise the steps of.It is initially formed one
Heating material layer on a dielectric layer, be subsequently formed one first cover curtain layer on heating material layer, re-form afterwards one second cover
Curtain layer is on the first cover curtain layer.Then heating material layer, the first cover curtain layer and second mask layer are patterned, with the first mask of exposure
The one side of layer, and the cover curtain layer of part first is removed from the side of the first cover curtain layer, with expose portion heating material layer.Moving
After second mask layer, using the first cover curtain layer as shade, remove the part heating material layer of exposure to form a heater.
According to one or more embodiments of the invention, the preparation method of phase-change memory is also comprised the steps of.In shape
The first cover curtain layer is removed after into heater, and forms insulating barrier covering heater.Planarization insulating layer is heated with exposure afterwards
Device, more forms a phase change layer on heater.
It is from removal portion at the side of the first cover curtain layer with a wet etching processing procedure according to one or more of the invention embodiments
Divide the first cover curtain layer.
According to one or more embodiments of the invention, wet etching processing procedure more removes the second mask layer of part and adding for part
Hot material layer, and the removal speed of the first cover curtain layer is more than second mask layer and the removal speed of heating material layer.
According to one or more embodiments of the invention, gone forward forming heating material layer in dielectric layer, also comprising formation one
Barrier layer is on dielectric layer.
According to one or more of the invention embodiments, be with a dry ecthing procedure remove the part heating material layer of exposure with
Heater is formed, and dry ecthing procedure stops at barrier layer.
It is an aspect of the present invention to provide a kind of preparation method of phase-change memory, comprise the steps of.It is initially formed one
Heating material layer is on a dielectric layer, being subsequently formed a cover curtain layer on heating material layer.Then patterning heating material layer with
Cover curtain layer, to expose at the one side of heating material layer, and the side of self-heating material layer removal part heating material layer, with
Form a heater.
According to one or more embodiments of the invention, the preparation method of phase-change memory is also comprised the steps of.In shape
Cover curtain layer is removed after into heater, and forms insulating barrier covering heater.Planarization insulating layer is to expose heater afterwards, more
A phase change layer is formed on heater.
It is with removal portion at the side of a wet etching processing procedure self-heating material layer according to one or more embodiments of the invention
Divide heating material layer.
According to one or more embodiments of the invention, wherein wet etching processing procedure more removes the cover curtain layer of part, and heating material
The removal speed of the bed of material is more than the removal speed of cover curtain layer.
Brief description of the drawings
For above and other purpose, feature, advantage and the embodiment of the present invention can be become apparent, appended accompanying drawing
Describe in detail as follows：
Figure 1A to Fig. 1 H is illustrated in some embodiments of the present invention, and a kind of phase-change memory is cutd open each stage of processing procedure
Face figure；
Fig. 2A to Fig. 2 G is illustrated in other parts embodiment of the present invention, and a kind of phase-change memory is in each stage of processing procedure
Profile；And
Fig. 3 is illustrated in other parts embodiment of the present invention, the schematic perspective view of Fig. 1 H phase-change memory.
Embodiment
Multiple embodiments of the present invention, as clearly stated, the details in many practices will be disclosed with accompanying drawing below
It will be explained in the following description.It should be appreciated, however, that the details in these practices is not applied to limit the present invention.Also
It is to say, in some embodiments of the present invention, the details in these practices is non-essential.In addition, for the sake of simplifying accompanying drawing, one
A little known usual structures will be illustrated in the way of simply illustrating in the accompanying drawings with element.
Please referring initially to Figure 1A to Fig. 1 H, Figure 1A to Fig. 1 H is illustrated in some embodiments of the present invention, a kind of phase change memory
Profile of the body in each stage of processing procedure.Please also refer to Figure 1A.Figure 1A illustrates to form a heating material layer 150 in a dielectric layer
On 130, one first cover curtain layer 160 is formed on heating material layer 150 and forming second mask layer 170 in the first mask
Step on layer 160.It is worth noting that, dielectric layer 130 described herein is located on a substrate 110, and have in substrate 110
There is an active member 120.In the present embodiment, active member 120 be transistor (transistor), its comprising source electrode 122,
Drain electrode 124 and grid 126, source electrode 122 with drain electrode 124 are located in the doped region of substrate 110, and grid 126 is arranged at substrate
On 110 and between source electrode 122 and drain electrode 124.In some embodiments of the present invention, the material of substrate 110 includes silicon
Or other semiconductor elements, such as germanium or iii-v element, but be not limited.
Specifically, any suitable mode deposition oxide or nitride can be used on substrate 110, to form covering
The dielectric layer 130 of substrate 110 and active member 120.Lithography mode pattern dielectric layer 130 can be used afterwards, to be formed
One perforation is through dielectric layer 130 and exposure active member 120.Conductive material is (for example：Metal) then fill in so far perforation with shape
Into the conductive contact 135 for being connected to active member 120.In the present embodiment, active member 120 is transistor, and conduction connects
It is the drain electrode 124 for being connected to active member 120 to touch 135.After conductive contact 135 is formed, a bottom electrode 140 is more formed in perforation
In conductive contact 135 on.In some embodiments of the present invention, the material of bottom electrode 140 can include titanium (Ti), titanium nitride
(TiN), tantalum nitride (TaN), TiAlN (TiAlN), aluminium nitride tantalum (TaAlN).
Formed foregoing dielectric layer 130, conductive contact 135 with after bottom electrode 140, can first planarized dielectric layer 130
Surface, is sequentially formed on heating material layer 150, the first cover curtain layer 160 and second mask layer 170 to dielectric layer 130 afterwards.Value
Obtain it is noted that being to be initially formed a barrier layer 145 after on dielectric layer 130 in the present embodiment, then sequentially form heating material
The bed of material 150, the first cover curtain layer 160 and second mask layer 170.The material of barrier layer 145 has relatively low heat conductivity, and it can
Lifted prepare phase-change memory it is electrical.Furthermore, barrier layer 145 is as etch stop layer to protect the bottom electrode under it
140 with conductive contact 135, its will in it is rear be described in detail.In some embodiments of the present invention, the material of barrier layer 145 can be included
Tantalum nitride.But barrier layer 145 can be also omitted in other embodiments without influenceing the spirit of the present invention.In the part of the present invention
In embodiment, any suitable mode can be used to form heating material layer 150, the first cover curtain layer 160 and second mask layer
170, for example：Chemical vapor deposition, physical vapour deposition (PVD) and/or ald.
Then Figure 1B is referred to.Figure 1B illustrates patterning heating material layer 150, the first cover curtain layer 160 and second mask
The step of layer 170, with the one side 162 of the first cover curtain layer 160 of exposure.Can for example first by photoresist layer (not illustrating), rotary coating be extremely
On second mask layer 170, the pattern of light shield (not illustrating) is then transferred to by photoresist layer with Exposure mode, to expose second mask
The upper surface of layer 170.Heating material layer 150, the first cover curtain layer 160 of part are finally removed using dry ecthing or wet etching processing procedure
And second mask layer 170, and finishing patterns heating material layer 150, the step of the first cover curtain layer 160 and second mask layer 170
Suddenly.It is worth noting that, the barrier layer 145 of part can be removed simultaneously in this step.Barrier layer 145, heating after patterning
Material layer 150, the first cover curtain layer 160 are located substantially at the top of bottom electrode 140 with second mask layer 170, and barrier layer 145 more connects
Connect bottom electrode 140.In addition, the side 162 of more exposed first curtain layer of hard hood 160 of patterning process.
Please continue to refer to Fig. 1 C.Fig. 1 C illustrate the removal cover curtain layer of part first from the side 162 of the first cover curtain layer 160
160, the step of with expose portion heating material layer 150.In this step, it is to the first cover curtain layer using a wet etching processing procedure
The side 162 of 160 exposures carries out lateral etch, and second mask layer 170 more protects the upper surface of the first cover curtain layer 160 in wet corrosion
Scribe in journey and do not weather.It is worth noting that, wet etching processing procedure can remove second mask layer 170 and the part of part simultaneously
Heating material layer 150, therefore the removal speed for making the first cover curtain layer 160 need to be made to be more than second mask from suitable etching solution
The removal speed of layer 170 and heating material layer 150.In other words, the etching solution of selection has higher to the first cover curtain layer 160
Etching selectivity.In one embodiment of the present invention, the material of heating material layer 150 is titanium nitride, the first cover curtain layer 160
Material is polysilicon, and the material of second mask layer 170 is silicon nitride.Now can select has high etch selection to polysilicon
TMAH (tetramethylammonium hydroxide, TMAH) solution, the ammoniacal liquor (NH of property4OH) and/or
Other suitable etching solutions remove the first cover curtain layer 160.
As shown in Figure 1 C, wet etching processing procedure reduces the cross-sectional width of the first cover curtain layer 160 to W1, to expose the portion under it
Divide heating material layer 150.Because this cross-sectional width W1 will determine the width of heater that is subsequently formed, therefore each seed ginseng of controllable
Number, for example：Etching period, etchant concentration and/or etching solution species are with controlling sections width W1 size.Specifically
It is that the first cover curtain layer 160 substantially has rectangular-shaped profile before the etch, but it is in the corner of rectangular-shaped profile after lateral etch
It will gradually be removed, and form cylindric or elliptic cylindrical shape the first cover curtain layer 160, and this cross-sectional width W1 is cylindric first
The diameter of cover curtain layer 160, or be the major axis or short axle of the first cover curtain layer of elliptic cylindrical shape 160.
Then Fig. 1 D are referred to.The step of Fig. 1 D illustrate removal second mask layer 170.In this step, it can be used any
Suitable solvent is to divest second mask layer 170, with only remaining the first curtain layer of hard hood 160 with cross-sectional width W1 in heating material
On the bed of material 150.In some embodiments of the present invention, the material of second mask layer 170 is silicon nitride, and phosphoric acid now can be used
And/or fluoric acid divests second mask layer 170.
With continued reference to Fig. 1 E.Fig. 1 E, which are illustrated, to be removed the part heating material layer 150 of exposure to form the step of a heater 152
Suddenly.As it was previously stated, the first curtain layer of hard hood 160 after lateral etch is not completely covered heating material layer 150, and by part plus
Hot material layer 150 is exposed.In this step, a dry ecthing procedure can be used to remove the expose portion of heating material layer 150,
Now the first hard cover screen 160 as shade to protect the heating material layer 150 under it to be not removed in dry ecthing procedure, and shape
Into a heater 152.Because be using the first hard cover screen 160 as shade to define the size of heater 152, heater 152
Cross-sectional width W2 is substantially same as the cross-sectional width W1 of the first hard cover screen 160.As it was previously stated, the first cover curtain layer 160 to be cylindric or
Elliptic cylindrical shape, therefore the heater 152 formed using it as shade is also similarly cylindric or elliptic cylindrical shape.Whereby, be not required to through
Heater 152 can be prepared into by crossing complicated processing procedure, and can regulate and control cutting for the first cover curtain layer 160 by foregoing wet etching processing procedure
Face width W1, so that heater 152 has roughly the same cross-sectional width W2.It is worth noting that, dry ecthing procedure is stopped at
Barrier layer 145, it, to protect the bottom electrode 140 under it and conductive contact 135 not to weather, and is improved as etch stop layer
The reliability of processing procedure.In addition, after heater 152 is formed, you can remove the first cover curtain layer 160 using any suitable solvent.
In some embodiments of the present invention, the material of the first cover curtain layer 160 is polysilicon, and TMAH now can be used
Solution and/or ammoniacal liquor divest the first cover curtain layer 160.
The present invention some embodiments in, the etching gas that dry ecthing procedure is used can comprising sulfur hexafluoride, helium,
Carbon tetrafluoride, fluoroform, hydrogen bromide, chlorine, oxygen, nitrogen or its combination, but the present invention is not limited.
Then Fig. 1 F are referred to.Fig. 1 F illustrate the step of forming an insulating barrier 180 covering heater 152.In this step,
Covering heater 152 and dielectric layer 130 can be formed with chemical vapor deposition, physical vapour deposition (PVD) and/or ald mode
Insulating barrier 180, and this insulating barrier 180 also covers barrier layer 145.As shown in fig. 1F, the upper surface of the insulating barrier 180 of formation is simultaneously
Non-flat forms, therefore more planarization insulating layer 180.Can be for example with chemical mechanical milling method (chemical mechanical
Polishing, CMP) upper surface of insulating barrier 180 is ground, and the upper surface of heater 152 is stopped to expose heater 152,
And form structure as shown in Figure 1 G.In some embodiments of the present invention, the material of insulating barrier 180 includes silica, nitrogen
SiClx, silicon oxynitride and/or its combination.
Then Fig. 1 H are referred to.Fig. 1 H illustrate to form a phase change layer 190 on heater 152, and form electricity on one
Pole 195 is in the step on phase change layer 190.In this step, phase change layer 190 is formed on heater 152 and directly contacted
Heater 152.Specifically, active member 120 produce electric current by conductive contact 135, bottom electrode 140, barrier layer 145 with
Enter at contact surface between heater, and self-heating device 152 and phase change layer 190 in phase change layer 190, due to Ohmic heating
Phase change layer 190 is heated and/or cooled down by the reason of (ohmic heating), so make its in crystalline phase with it is noncrystalline alternate
Conversion.If it is worth noting that, the contact area between heater 152 and phase change layer 190 is smaller, you can allow higher every list
Position areal electric current (current density) so that the significant lifting of the efficiency of heating surface.In other words, of short duration powerful electric pulse leads to
Cross heater 152 and produce high unit area current, it can accelerate the heating and cooling of phase change layer 190, and lifted between phase
Conversion speed.It can learn whereby when the cross-sectional width W2 of heater 152 is smaller, its contact surface between phase change layer 190
Product is relative to be reduced, and the phase-change memory of preparation is had higher efficiency.Therefore, it is controllable in foregoing wet etching processing procedure
Etching period processed, etchant concentration and/or etching solution species so that the first cover curtain layer 160 have less cross-sectional width W1, and
This first cover curtain layer 160 is in dry ecthing procedure as shade to define the cross-sectional width W2 of heater 152.As it was previously stated, cutting
Face width W1 is substantially identical with cross-sectional width W2, therefore the heater 152 being prepared into can equally have less cross-sectional width W2
To lift the efficiency of phase-change memory.After phase change layer 190 is formed, a Top electrode 195 is more formed on phase change layer 190
And phase change layer 190 is contacted to form phase-change memory 100, and using lithography mode define phase change layer 190 with
The pattern of Top electrode 195.
In some embodiments of the present invention, phase change layer 190 can include one or more phase-transition materials, for example：Germanium
Antimony tellurium (Ge2Sb2Te5、Ge3Sb6Te5, GST), N doping Ge-Sb-Te (nitrogen-doped Ge2Sb2Te5), antimony telluride
(Sb2Te), germanium antimony (GeSb) or indium doping antimony telluride (In-doped Sb2Te).In some embodiments of the present invention, on
The material of electrode 195 can include titanium (Ti), titanium nitride (TiN), tantalum nitride (TaN), TiAlN (TiAlN), aluminium nitride tantalum
, and the material of Top electrode 195 may be the same or different in bottom electrode 140 (TaAlN).
Please continue to refer to Fig. 2A to Fig. 2 G, Fig. 2A to Fig. 2 G is illustrated in other parts embodiment of the present invention, a kind of phase transformation
Change profile of the memory body in each stage of processing procedure.Please also refer to Fig. 2A.Fig. 2A illustrates to form a heating material layer 250 in Jie
In electric layer 130 and formed a cover curtain layer 270 in the step on heating material layer 250.Substrate 110 that Fig. 2A is illustrated, active element
The source electrode 122 of part 120, drain electrode 124 are approximately similar to figure with grid 126, dielectric layer 130, conductive contact 135 and bottom electrode 140
1A, is repeated no more in this.
It is worth noting that, be to be initially formed a barrier layer 245 after on dielectric layer 130 in the present embodiment, then sequentially
Form heating material layer 250 and cover curtain layer 270.The material of barrier layer 245 has relatively low heat conductivity, and it can lift preparation
Phase-change memory it is electrical.Furthermore, barrier layer 245 is as etch stop layer to protect the bottom electrode 140 under it to be connect with conduction
Touch 135.In some embodiments of the present invention, the material of barrier layer 245 can include tantalum nitride.But in other embodiments
Also barrier layer 245 can be omitted without influenceing the spirit of the present invention.In some embodiments of the present invention, it is any suitable to can be used
Mode form heating material layer 250 and cover curtain layer 270, for example：Chemical vapor deposition, physical vapour deposition (PVD) and/or atom
Layer deposition.
Then Fig. 2 B are referred to.The step of Fig. 2 B illustrate patterning heating material layer 250 and second mask layer 270, with
The one side 251 of exposure heating material layer 250.Photoresist layer (can not first for example be illustrated into) rotary coating to cover curtain layer 270, connect
And the pattern of light shield (not illustrating) is transferred to by photoresist layer with Exposure mode, to expose the upper surface of cover curtain layer 270.Finally use
Dry ecthing or the heating material layer 250 and cover curtain layer 270 of wet etching processing procedure removal part, and finishing patterns heating material layer
250 with cover curtain layer 270 the step of.It is worth noting that, the barrier layer 245 of part can be removed simultaneously in this step.Patterning
Barrier layer 245, heating material layer 250 afterwards is located substantially at the top of bottom electrode 140 with cover curtain layer 270, and barrier layer 245 more connects
Connect bottom electrode 140.In addition, the side 251 of the more exposed heating material layer 250 of patterning process.
Please continue to refer to Fig. 2 C.Fig. 2 C, which are illustrated, removes part heating material layer at the side 251 of self-heating material layer 250
250, the step of to form heater 252.In this step, it is that heating material layer 250 is exposed using a wet etching processing procedure
Side 251 carry out lateral etch, and cover curtain layer 270 more protect the upper surface of heating material layer 250 in wet etching processing procedure not
Weather.It is worth noting that, wet etching processing procedure can remove the cover curtain layer 270 of part simultaneously, therefore need to be from suitable etching
Removal speed of the removal speed more than cover curtain layer 270 that liquid makes heating material layer 250 to make.In other words, the etching solution of selection
There is higher etching selectivity to heating material layer 250.In one embodiment of the present invention, the material of heating material layer 250
Matter is titanium nitride, and the material of cover curtain layer 270 is silicon nitride.Now can select has the four of high etch selectivity to titanium nitride
First nitric acid/hydrogenperoxide steam generator, sulfuric acid/hydrogenperoxide steam generator and/or other suitable etching solutions remove heating material layer 250.
As shown in Figure 2 C, the width of wet etching processing procedure reduction heating material layer 250, and Formation cross-section width W3 heater
252.Because cross-sectional width W3 will determine the phase transformation speed of phase change layer that is subsequently formed, therefore controllable various parameters, example
Such as：Etching period, etchant concentration and/or etching solution species are with controlling sections width W3 size.Specifically, plus
Hot material layer 250 substantially has rectangular-shaped profile before the etch, but it will be by the corner of rectangular-shaped profile after lateral etch
Gradually it is removed, forms cylindric or elliptic cylindrical shape heater 252, and this cross-sectional width W3 is cylindric heater 252
Diameter, or be the major axis or short axle of elliptic cylindrical shape heater 252.
Then Fig. 2 D are referred to.The step of Fig. 2 D illustrate removal cover curtain layer 270.In this step, it is any suitable to can be used
Solvent to divest cover curtain layer 270, with the only remaining heater 252 with cross-sectional width W3 on dielectric layer 130.In the present invention
Some embodiments in, the material of cover curtain layer 270 is silicon nitride, now phosphoric acid and/or fluoric acid can be used to divest cover curtain layer
270。
Then Fig. 2 E are referred to.Fig. 2 E illustrate the step of forming an insulating barrier 280 covering heater 252.In this step,
Covering heater 252 and dielectric layer 130 can be formed with chemical vapor deposition, physical vapour deposition (PVD) and/or ald mode
Insulating barrier 280, and this insulating barrier 280 also covers barrier layer 245.As shown in Figure 2 E, the upper surface of the insulating barrier 280 of formation is simultaneously
Non-flat forms, therefore more planarization insulating layer 280.The upper surface of insulating barrier 280 can be for example ground with chemical mechanical milling method, and stopped
The upper surface of heater 252 is terminated in expose heater 252, and forms structure as shown in Figure 2 F.It is real in the part of the present invention
Apply in mode, the material of insulating barrier 280 includes silica, silicon nitride, silicon oxynitride and/or its combination.
Then Fig. 2 G are referred to.Fig. 2 G illustrate to form a phase change layer 290 on heater 252, and form electricity on one
Pole 295 is in the step on phase change layer 290.In this step, phase change layer 290 is formed on heater 252 and directly contacted
Heater 252.If as it was previously stated, the contact area between heater 252 and phase change layer 290 is smaller, you can allow higher every
Unit area current (current density) so that the significant lifting of the efficiency of heating surface.Cutting when heater 252 can be learnt whereby
Face width W3 gets over hour, and its contact area between phase change layer 290 is relative to be reduced, and has the phase-change memory of preparation
Higher efficiency.Therefore, etching period, etchant concentration and/or etching solution species are can control in foregoing wet etching processing procedure
With lateral etch heating material layer 250, and it is prepared into the heater 252 with small cross sections width W3.Forming phase change layer
After 290, a Top electrode 295 is more formed on phase change layer 290 and contacting phase change layer 290 to form phase-change memory 200,
And the pattern of phase change layer 290 and Top electrode 295 is defined using lithography mode.
In some embodiments of the present invention, phase change layer 290 can include one or more phase-transition materials, for example：Germanium
Antimony tellurium (Ge2Sb2Te5、Ge3Sb6Te5, GST), N doping Ge-Sb-Te (nitrogen-doped Ge2Sb2Te5), antimony telluride
(Sb2Te), germanium antimony (GeSb) or indium doping antimony telluride (In-doped Sb2Te).In some embodiments of the present invention, on
The material of electrode 195 can include titanium (Ti), titanium nitride (TiN), tantalum nitride (TaN), TiAlN (TiAlN), aluminium nitride tantalum
, and the material of Top electrode 295 may be the same or different in bottom electrode 140 (TaAlN).
Then referring to Fig. 3, Fig. 3 is the schematic perspective view of Fig. 1 H phase-change memory 100.For clear explanation, in Fig. 3
Middle substrate 110, active member 120, dielectric layer 130 all have been omitted from conductive contact 135.Specifically, when active member 120 is carried
When power supply flow to bottom electrode 140, electric current can be arrived sequentially along bottom electrode 140, barrier layer 145, heater 152, phase change layer 190
Up to Top electrode 192.If the contact area between heater 152 and phase change layer 190 is smaller, you can allow higher current density,
And lift the efficiency of heating surface of heater 152.By taking the columned heater 152 of present embodiment as an example, if columned section is wide
Spend W2 smaller, then its contact area between phase change layer 190 is relative decrease.As it was previously stated, controllable various parameters, example
Such as：Etching period, etchant concentration and/or etching solution species are with controlling sections width W2 size, to obtain preliminary dimension
Heater 152.Compared to prior art, the present invention provides more simply with efficient processing procedure to obtain the heating of reduced size
Device 152, without passing through complicated and time-consuming registration mechanism.In the other embodiment of the present invention, the shape of heater 152
Cylindric, elliptic cylindrical shape is not limited to, it also can be in wavy or other suitable shapes, and without departing from scope of the invention.
Although the present invention is disclosed above with embodiment, so it is not limited to the present invention, any to be familiar with this skill
Person, without departing from the spirit and scope of the present invention, when can be used for a variety of modifications and variations, therefore protection scope of the present invention is worked as
It is defined depending on the scope of which is defined in the appended claims.
Claims (6)
1. a kind of preparation method of phase-change memory, it is characterised in that include：
A heating material layer is formed on a dielectric layer；
One first cover curtain layer is formed on the heating material layer；
Second mask layer is formed on first cover curtain layer；
The heating material layer, first cover curtain layer and second mask layer are patterned, with the one side of exposure first cover curtain layer；
Part first cover curtain layer is removed from the side of first cover curtain layer, with the expose portion heating material layer；
Remove second mask layer；And
Using first cover curtain layer as shade, remove part heating material layer of exposure to form a heater.
2. the preparation method of phase-change memory according to claim 1, it is characterised in that also include：
Remove first cover curtain layer；
Form an insulating barrier and cover the heater；
The insulating barrier is planarized with the exposure heater；And
A phase change layer is formed on the heater.
3. the preparation method of phase-change memory according to claim 1, it is characterised in that be with a wet etching processing procedure from
Part first cover curtain layer is removed at the side of first cover curtain layer.
4. the preparation method of phase-change memory according to claim 3, it is characterised in that the wet etching processing procedure removal portion
The second mask layer and the heating material layer of part divided, and the removal speed of first cover curtain layer is more than second mask layer
With the removal speed of the heating material layer.
5. the preparation method of phase-change memory according to claim 1, it is characterised in that forming the heating material layer
Go forward, also include in the dielectric layer：
A barrier layer is formed on the dielectric layer.
6. the preparation method of phase-change memory according to claim 5, it is characterised in that moved with a dry ecthing procedure
Except the exposed part heating material layer to form the heater, and the dry ecthing procedure stops at the barrier layer.
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| CN101567420A (en) * | 2009-06-02 | 2009-10-28 | 中国科学院上海微系统与信息技术研究所 | Method for preparing phase transition storage |
| CN101572290A (en) * | 2009-06-02 | 2009-11-04 | 中国科学院上海微系统与信息技术研究所 | Method for preparing columnar nanometer heating electrode |
| CN102347442A (en) * | 2010-07-29 | 2012-02-08 | 中芯国际集成电路制造(上海)有限公司 | Method for making phase change memory structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101567420A (en) * | 2009-06-02 | 2009-10-28 | 中国科学院上海微系统与信息技术研究所 | Method for preparing phase transition storage |
| CN101572290A (en) * | 2009-06-02 | 2009-11-04 | 中国科学院上海微系统与信息技术研究所 | Method for preparing columnar nanometer heating electrode |
| CN102347442A (en) * | 2010-07-29 | 2012-02-08 | 中芯国际集成电路制造(上海)有限公司 | Method for making phase change memory structure |
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