CN101572290A - Method for preparing columnar nanometer heating electrode - Google Patents
Method for preparing columnar nanometer heating electrode Download PDFInfo
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- CN101572290A CN101572290A CNA2009100524063A CN200910052406A CN101572290A CN 101572290 A CN101572290 A CN 101572290A CN A2009100524063 A CNA2009100524063 A CN A2009100524063A CN 200910052406 A CN200910052406 A CN 200910052406A CN 101572290 A CN101572290 A CN 101572290A
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Abstract
The invention relates to a method for preparing a columnar nanometer heating electrode, which comprises the following steps: firstly, depositing a layer of TiN film of which the thickness is between 100 and 300 nanometers on a substrate, and using submicron CMOS standard process exposing technique to form a photoresist pattern of which the diameter is between 200 and 300 nanometers on the TiN film; secondly, using the shape of an O2 gas trimming photoresist in a reactive ion etching technique to reduce the size of the photoresist pattern to be around 40 to 100 nanometers, and etching the TiN film by using a plasma etching technique; and finally, washing the photoresist to obtain the columnar nanometer heating electrode of which the size is between 40 and 100 nanometers. The method not only avoids the difficulty of using an exposing technique under 100 nanometers directly and reduces the manufacturing cost, but more importantly reduces the operating current and the power consumption of a phase change memory. The method not only is applicable to preparing a small-size nanometer heating electrode for the phase change memory, but also is applicable to preparing nano-electrodes required by other electronic devices particularly nano-electronic devices, and has great application value.
Description
Technical field
The present invention relates to a kind of preparation method who is used for the columnar nanometer heating electrode of phase transition storage, a kind of specifically on sub-micron CMOS standard technology exposure technique basis, by utilizing O in the reactive ion etching technology
2The pattern of gas finishing photoresist dwindles the photoresist dimension of picture, prepares the method for the following columnar nanometer heating electrode of 100nm.
Background technology
Phase transition storage (C-RAM based on sulphur based semiconductor alloy material, Chalcogenide randomaccess memory) it is low to have a driving voltage, power consumption is little, read or write speed is fast, the storage density height, good with CMOS standard technology compatibility, outstanding feature such as non-volatile becomes the focus of the concern of each major company of the world, research institution.From 2003, international semiconductor TIA thought that always phase transition storage most possibly replaces current main product such as SRAM, DRAM, FLASH and becomes non-volatile semiconductor memory of future generation.Main in the world semiconductor company all is being devoted to the research and development of phase transition storage at present, there are Ovonyx, Intel, Samsung, ST Micron, Hitachi, AMD etc. in main research unit, wherein the most representative with Samsung, they utilized the 90nm processing line successfully to develop the 512M phase transition storage in 2006.
Want to realize the industrialization of phase transition storage, phase transition storage just must develop toward high speed, high density, low pressure, low-power consumption direction, to replace existing memory technology.And the most crucial part of phase transition storage is exactly the zone that phase-change material underwent phase transition, realized memory function, and the area size that just contacts with heating electrode is because it directly determines driving voltage, power consumption and the integrated level of phase transition storage.On the other hand, recent decades, microelectronic technique developed rapidly according to Moore's Law, and many in the world major companies are in CMOS processing lines such as research and development 45nm, 32nm, and it is made flow process and becomes increasingly complex, and manufacturing cost is also more and more higher.
The present invention at how to avoid directly uses the following exposure technique of 100nm and reduces cost, for the columnar nanometer heating electrode of preparing below the diameter 100nm has proposed a kind of practical new.
Summary of the invention
The technical problem to be solved in the present invention is to provide the preparation method of columnar nanometer heating electrode to be used to reduce the operating current and the power consumption of manufacturing cost and phase transition storage.
For solving the problems of the technologies described above, the present invention adopts following main technique step: the preparation method of columnar nanometer heating electrode is characterized in that this method specifically may further comprise the steps:
(a) on substrate, deposit thin film;
(b) on the structure that step (a) obtains, utilize sub-micron CMOS standard technology exposure technique to prepare the photoresist figure of diameter for 200nm～300nm;
(c) utilize O in the reactive ion etching technology
2The pattern of gas finishing photoresist, it is 40nm～100nm that the photoresist dimension of picture is narrowed down to diameter, and etching power is 500W～1000W, and etching air pressure is 10mTorr～100mTorr, O
2Flow is 500sccm～2000sccm, and etch rate is about 500nm/min～800nm/min;
(d) utilize the technology etched film of plasma etching to form columnar nanometer heating electrode;
(e) last cleaning photoetching glue obtains columnar nanometer heating electrode.
As one of optimal way of the present invention, the material of film is TiN, W, Ti, TiN/SiO in the step (a)
2, a kind of among the TiN/SiNx.
As one of optimal way of the present invention, utilize O in the reactive ion etching technology in the step (c)
2Gas finishing photoresist mask patterns is reduced into 50nm with the photoresist dimension of picture.
As one of optimal way of the present invention, the material of described substrate is a kind of among Al, Cu, Ti, TiN, W, Ta, the TaN.
The invention provides the preparation method of columnar nanometer heating electrode, on sub-micron (0.13um, 0.18um, 0.25um etc.) CMOS standard technology exposure technique basis, by the method for rest and reorganization photoresist mask, preparing diameter is the nanometer column heating electrode of 40nm～100nm.Thereby avoided the difficulty of the following exposure technique of direct use 100nm, reduced manufacturing cost, the more important thing is the operating current and the power consumption that have reduced phase transition storage, for high speed, high density, low pressure, the low-power consumption developing direction of phase transition storage are laid a good foundation.The present invention is not only applicable to prepare the small size nanometer heating electrode of phase transition storage, is equally applicable to prepare the particularly required nano-electrode of nanometer electronic device of other electronic devices, has very big using value.
Description of drawings
The cross-sectional view of deposition one deck TiN on the substrate among Fig. 1 the present invention.
On sub-micron CMOS standard technology exposure technique basis, forming diameter is the photoresist mask schematic diagram of 200nm～300nm among Fig. 2 the present invention.
Utilize reactive ion etching method rest and reorganization photoresist to fall the cross-sectional view of reduced among Fig. 3 the present invention to 40nm～100nm.
Utilize the cross-sectional view after the reactive ion etching method etching forms the TiN electrode among Fig. 4 the present invention.
Obtain the cross-sectional view of nano-electrode among Fig. 5 the present invention behind the cleaning photoetching glue.
Utilize the unit component structural profile schematic diagram of gained nanometer column heating electrode preparation among Fig. 6 the present invention.
Wherein, 1-substrate; 2-TiN; The 3-photoresist; The 4-phase-change material; The 5-top electrode.
Embodiment
Below in conjunction with accompanying drawing detailed the present invention of specific embodiment by the several indefinitenesses of reference.
The preparation method of columnar nanometer heating electrode, this method specifically may further comprise the steps:
(a) on substrate, deposit thin film;
(b) on the structure that step (a) obtains, utilize sub-micron CMOS standard technology exposure technique to prepare the photoresist figure of diameter for 200nm～300nm;
(c) utilize O in the reactive ion etching technology
2The pattern of gas finishing photoresist, it is 40nm～100nm that the photoresist dimension of picture is narrowed down to diameter, and etching power is 500W～1000W, and etching air pressure is 10mTorr～100mTorr, O
2Flow is 500sccm～2000sccm, and etch rate is about 500nm/min～800nm/min;
(d) utilize the technology etched film of plasma etching to form columnar nanometer heating electrode;
(e) last cleaning photoetching glue obtains columnar nanometer heating electrode.
Below by detailed the present invention of specific embodiment with reference to several indefinitenesses.
Embodiment 1:
(1) deposition one deck TiN film on substrate;
(2) utilizing 0.18 micron technology exposure technique to prepare the photoresist figure of diameter about on the structure that step (a) obtains for 200nm～300nm;
(3) utilize O in the reactive ion etching technology
2The pattern of gas finishing photoresist, it is 40nm～100nm that the photoresist dimension of picture is narrowed down to diameter; 50nm preferably.
(4) utilize the technology etching TiN of plasma etching to form columnar nanometer heating electrode;
(5) last cleaning photoetching glue obtains the pattern of TiN columnar nanometer heating electrode.
(6) on being the columnar nanometer heating electrode of 40nm～100nm, above-mentioned diameter prepares phase-change material, insulating material and upper electrode material, by peeling off or the method for etching forms phase-change memory unit element.
Embodiment 2:
Change the TiN in (1) metal materials such as into Ti, W, utilize similar process conditions also can obtain columnar nanometer heating electrode about 50nm.
Embodiment 3:
With the hearth electrode material in (1) is the combination of metal electrode or metal electrode and transition zone, and buffer layer material is meant the metallic alloy that improves the efficiency of heating surface, as: TiW, Ta
2O
5, TiO
2, GeWN, GeSi etc., transition zone mainly are in order to reduce the heat dissipation of phase transition storage, perhaps to improve the efficiency of heating surface of electrode.
Embodiment 4:
Change TiN in (1) into TiN/SiO
2, TiN/SiN
xEtc. structure, utilize O in the reactive ion etching technology
2The pattern of gas finishing photoresist, it is 40nm～100nm that the photoresist dimension of picture is narrowed down to diameter, and etching forms the electrode pattern, and wet-cleaned is removed SiO
2, SiN
xDeng material, obtain the pattern of columnar nanometer heating electrode.
Change TiN in (1) into TiN/SiO
2, TiN/SiN
xEtc. structure, utilize O in the reactive ion etching technology
2The pattern of gas finishing photoresist, it is 40nm～100nm that the photoresist dimension of picture is narrowed down to diameter, removes photoresist, SiO this moment
2, SiN
xPlay the effect of hard mask Deng material, etching forms the electrode pattern, and wet-cleaned is removed hard mask, obtains nanometer columnar electrode pattern.
The present invention relates to a kind of preparation method who is used for the columnar nanometer heating electrode of phase transition storage, a kind of specifically on sub-micron CMOS standard technology exposure technique basis, by utilizing O in the reactive ion etching technology
2The pattern of gas finishing photoresist, it is 40nm～100nm that the photoresist dimension of picture is narrowed down to diameter, prepares the following columnar nanometer heating electrode of 100nm.Thereby avoided the difficulty of the following exposure technique of direct use 100nm, reduced manufacturing cost.The more important thing is the contact area that has reduced heating electrode and phase-change material, improved heating current, reduced the power consumption of phase transition storage, lay a good foundation for phase transition storage develops toward high speed, high density, low pressure, low-power consumption direction.The preparation technology who belongs to the microelectronics nano material.
The foregoing description is the unrestricted technical scheme of the present invention in order to explanation only.Any technical scheme that does not break away from spirit and scope of the invention all should be encompassed in the middle of the patent claim of the present invention.
Claims (4)
1, the preparation method of columnar nanometer heating electrode is characterized in that, this method specifically may further comprise the steps:
(a) on substrate, deposit thin film;
(b) on the structure that step (a) obtains, utilize sub-micron CMOS standard technology exposure technique to prepare the photoresist figure of diameter for 200nm～300nm;
(c) utilize O in the reactive ion etching technology
2The pattern of gas finishing photoresist, it is 40nm～100nm that the photoresist dimension of picture is narrowed down to diameter, and etching power is 500W～1000W, and etching air pressure is 10mTorr～100mTorr, O
2Flow is 500sccm～2000sccm, and etch rate is about 500nm/min～800nm/min;
(d) utilize the technology etched film of plasma etching to form columnar nanometer heating electrode;
(e) last cleaning photoetching glue obtains columnar nanometer heating electrode.
2, the preparation method of columnar nanometer heating electrode as claimed in claim 1 is characterized in that: the material of film is TiN, W, Ti, TiN/SiO in the step (a)
2, a kind of among the TiN/SiNx.
3, the preparation method of columnar nanometer heating electrode as claimed in claim 2 is characterized in that: utilize O in the reactive ion etching technology in the step (c)
2Gas finishing photoresist mask patterns is reduced into 40nm～100nm with the photoresist dimension of picture.
4, the preparation method of columnar nanometer heating electrode as claimed in claim 1 is characterized in that: the material of described substrate is a kind of in Al, Cu, Ti, TiN, W, Ta, the TaN metallic conduction material.
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| CN2009100524063A CN101572290B (en) | 2009-06-02 | 2009-06-02 | Method for preparing columnar nanometer heating electrode |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102403455A (en) * | 2010-09-17 | 2012-04-04 | 中芯国际集成电路制造(上海)有限公司 | Method for manufacturing phase-change memory component |
| CN105098069A (en) * | 2015-07-07 | 2015-11-25 | 宁波时代全芯科技有限公司 | Preparation method of phase-change memory |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100342497C (en) * | 2004-05-21 | 2007-10-10 | 中国科学院微电子研究所 | Method for forming nanowire wide polycrystalline silicon gate etching mask images |
| US20060284156A1 (en) * | 2005-06-16 | 2006-12-21 | Thomas Happ | Phase change memory cell defined by imprint lithography |
| CN100461483C (en) * | 2006-06-23 | 2009-02-11 | 中国科学院上海微系统与信息技术研究所 | Method for reducing heating electrode area of phase-change memory |
| CN101436570A (en) * | 2008-12-11 | 2009-05-20 | 中国科学院上海微系统与信息技术研究所 | Method for preparing phase-change memory |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102403455A (en) * | 2010-09-17 | 2012-04-04 | 中芯国际集成电路制造(上海)有限公司 | Method for manufacturing phase-change memory component |
| CN105098069A (en) * | 2015-07-07 | 2015-11-25 | 宁波时代全芯科技有限公司 | Preparation method of phase-change memory |
| CN105098069B (en) * | 2015-07-07 | 2017-09-19 | 江苏时代全芯存储科技有限公司 | The preparation method of phase-change memory |
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