CN105428533B - The manufacture method of phase-change memory - Google Patents
The manufacture method of phase-change memory Download PDFInfo
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- CN105428533B CN105428533B CN201510990447.2A CN201510990447A CN105428533B CN 105428533 B CN105428533 B CN 105428533B CN 201510990447 A CN201510990447 A CN 201510990447A CN 105428533 B CN105428533 B CN 105428533B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
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- 238000010438 heat treatment Methods 0.000 claims description 52
- 239000000463 material Substances 0.000 claims description 46
- 230000004888 barrier function Effects 0.000 claims description 42
- 238000009413 insulation Methods 0.000 claims description 34
- 230000008569 process Effects 0.000 claims description 27
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 8
- 229910052715 tantalum Inorganic materials 0.000 claims description 7
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 168
- 239000012071 phase Substances 0.000 description 52
- 238000000151 deposition Methods 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
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- 230000008021 deposition Effects 0.000 description 10
- 239000011810 insulating material Substances 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 10
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 9
- 239000011241 protective layer Substances 0.000 description 9
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- 238000005229 chemical vapour deposition Methods 0.000 description 7
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- 238000000059 patterning Methods 0.000 description 6
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- 238000000231 atomic layer deposition Methods 0.000 description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 5
- 239000011733 molybdenum Substances 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 229910017083 AlN Inorganic materials 0.000 description 4
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- 229910010037 TiAlN Inorganic materials 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
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- 238000003860 storage Methods 0.000 description 4
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- 230000015572 biosynthetic process Effects 0.000 description 2
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- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
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- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 1
- CBJZJSBVCUZYMQ-UHFFFAOYSA-N antimony germanium Chemical compound [Ge].[Sb] CBJZJSBVCUZYMQ-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Abstract
The invention discloses a kind of manufacture method of phase-change memory.Phase-change memory includes active member, bottom electrode, resistance impaired pieces, heater, the first insulating layer, top electrode and ring-type phase change layer.Bottom electrode couples active member, and resistance impaired pieces are located above bottom electrode, and heater is embedded in resistance impaired pieces.First insulating layer covers heater and resistance impaired pieces, and top electrode is located above the first insulating layer.Ring-type phase change layer surrounds the first insulating layer and top electrode, and at least one side of ring-type phase change layer contact heater.Since the contact area very little between heater and ring-type phase change layer, the reset current of phase-change memory are very low.
Description
Technical field
The invention relates to a kind of manufacture method of phase-change memory.
Background technology
Electronic product (such as：Mobile phone, tablet computer and digital camera) often with the memory cell for having storage data.
Know that memory cell can pass through the storage node storage information on memory cell.Wherein, phase-change memory utilizes memory body
The resistance states (such as high value and low resistance) of element store information.Memory cell can have one can be in different phase
(such as：Crystalline phase and amorphous phase) between the material changed.Different phase causes memory cell to have the resistance of different resistance values
State, for representing the different numerical value of storage data.
Phase-change memory unit in operation, can apply electric current so that the temperature of memory cell is lifted to change material
Phase.But the contact area between the heater and phase-transition material in current existing phase-change memory is larger so that
The reset current of phase-change memory is higher.Although using lithographic and etch process, the less column heating of top area is formed
Device, is contacted with each other with the top surface of column heater with phase-transition material, but micro-photographing process still has its limit, and the difficulty of etch process
Degree is also high, therefore is not easy to be precisely controlled the characteristic size of column heater.Therefore, how to make heater and phase-transition material it
Between contact area smaller become one of important topic of the art.
The content of the invention
It is an aspect of the invention to provide a kind of method for manufacturing phase-change memory, comprise the steps of.Form one
On patterned insulation layer a to bottom electrode and a dielectric layer, and patterned insulation layer has an opening exposure bottom electrode.Form one
Clearance wall forms the side wall of a barrier wall coverage gap wall and the bottom of opening in the side wall of opening.Form a heating pad wall extremely
In the remainder of opening, and the barrier wall of part and partial heating pad wall are removed, to form a resistance impaired pieces and a heater.
In one or more embodiments of the present invention, form clearance wall and included in the step of side wall of opening：Form one
The side wall and bottom of cover curtain layer conformally overlay pattern insulating layer and opening, and anisotropically remove cover curtain layer, with from
Cover curtain layer forms clearance wall in the side wall of opening.
The present invention one or more embodiments in, formed barrier wall coverage gap wall side wall and opening bottom with
The step formed in heating pad wall to the remainder of opening includes：Form the conformal overlay patternization insulation of a barrier material layer
Upper surface and side wall and the bottom of opening of layer, clearance wall.Heating material layer covering barrier material layer is formed, and it is partial
Heating material layer is filled into the remainder of opening.Barrier material layer and heating material layer are ground, to form barrier wall with adding
Hot wall is in this opening.
In one or more embodiments of the present invention, the method for manufacturing phase-change memory is also exhausted comprising abrasive patternization
Edge layer and clearance wall, so that the upper surface of patterned insulation layer and clearance wall and the upper surface of the heating pad wall are copline.
In one or more embodiments of the present invention, the barrier wall and the step of heating pad wall that remove part include：Increase
The thickness of patterned insulation layer is deposited on a conductive material to patterned insulation layer with covering heating pad wall and barrier wall.Remove
Partial patterned insulation layer and partial conductive material, to form one first insulating layer and a top electrode.Remove the resistance of part
Hinder wall and partial heating pad wall, to form resistance impaired pieces and heater, and the one side of the first insulating layer exposing heater.
In one or more embodiments of the present invention, the method for manufacturing phase-change memory also comprises the steps of.It is heavy
One phase change layer of product conformally covers the first insulating layer and top electrode, and anisotropic removes the phase change above top electrode
Layer, the first insulating layer and top electrode are surrounded to form ring-type phase change layer.
In one or more embodiments of the present invention, the method for manufacturing phase-change memory also comprises the steps of.It is heavy
Product one second insulating layer covering top electrode and ring-type phase change layer, and to the second insulating layer, top electrode and ring-type phase change layer into
One planarization process of row.
In one or more embodiments of the present invention, barrier layer includes tantalum nitride, and heating material layer includes titanium nitride.
In one or more embodiments of the present invention, ring-type phase change layer is formed around the first insulating layer and top electrode
Step includes：Deposit a phase change layer and conformally cover the first insulating layer and top electrode；And anisotropic is removed in top electrode
The phase change layer of side, the first insulating layer and top electrode are surrounded to form ring-type phase change layer.
In one or more embodiments of the present invention, also comprise the steps of.The covering of one second insulating layer is deposited to power on
Pole and ring-type phase change layer, and a planarization process is carried out to the second insulating layer, top electrode and ring-type phase change layer.
It is another aspect of the invention to provide a kind of phase-change memory, comprising active member, bottom electrode, resistance impaired pieces,
Heater, the first insulating layer, top electrode and ring-type phase change layer.Bottom electrode couples active member, and resistance impaired pieces are located at bottom electrode
Top, and heater is embedded in resistance impaired pieces.First insulating layer covers heater and resistance impaired pieces, and top electrode is located at the first insulating layer
Top.Ring-type phase change layer surrounds the first insulating layer and top electrode, and at least one side of ring-type phase change layer contact heater.
In one or more embodiments of the present invention, phase-change memory also includes at least two clearance walls, wherein first
Insulating layer covers these clearance walls, and resistance impaired pieces and heater are located between these clearance walls.
Brief description of the drawings
Figure 1A is the diagrammatic cross-section according to the phase-change memory of the several embodiments of the present invention；
Figure 1B illustrates the schematic perspective view of part-structure in Figure 1A；
Fig. 2,3,4,5,6A, 7,8A, 9,10,11 and 12 are the manufacture phase change memory according to the several embodiments of the present invention
The method of body, in the diagrammatic cross-section in processing procedure each stage；
Fig. 6 B illustrate the upper schematic diagram of the processing procedure intermediate structure of Fig. 6 A；
Fig. 8 B illustrate the upper schematic diagram of the processing procedure intermediate structure of Fig. 8 A.
Embodiment
As described in prior art, the contact between heater and phase-transition material in current existing phase-change memory
Area is larger, makes the reset current of phase-change memory higher.Although using lithographic and etch process, it is smaller to form top area
Column heater, contacted with each other with the top surface of column heater with phase-transition material, but micro-photographing process still has its limit, and lose
Scribe that the difficulty of journey is also high, therefore be not easy to be precisely controlled the characteristic size of column heater.
Therefore, the present invention provides a kind of phase-change memory, includes heater and ring-type phase change layer.Heater and ring-type
Contact area between phase change layer is about that the lateral width of heater is multiplied by thickness.In the situation of the very thin thickness of heating layer
Under, contact area very little, makes phase-change memory to have extremely low reset current, so as to effectively solve described in prior art
Problem.
In addition, forming the processing procedure of the heater of the present invention will not suffer to form the micro-photographing process that column heater is faced
The limit and etch process difficulty the problems such as.In other words, compared to column heater is formed, the heater of the present invention is formed
Processing procedure is easier to control, and can effectively control the characteristic size of heater.It will be detailed below the phase change memory of the present invention
The various embodiments of body and its manufacture method.
Figure 1A is the diagrammatic cross-section according to the phase-change memory 100 of the several embodiments of the present invention.As shown in Figure 1A, phase
Change memory body 100 and include active member 120, bottom electrode 140, resistance impaired pieces 152, heater 154, the first insulating layer 160, ring-type
Phase change layer 165 and top electrode 170.Active member 120 is located in substrate 110, and in the present embodiment, active member
120 be transistor (transistor), and it includes source electrode 122, drain electrode 124 and grid 126, source electrode 122 is to be located at drain electrode 124
In the doped region of substrate 110, and grid 126 is arranged on substrate 110 and is located between source electrode 122 and drain electrode 124.In the present invention
Other parts embodiment in, also there is shallow trench isolation (shallow trench isolation, STI) in substrate 110
Structure 112 is with electrically isolated adjacent active member 120.In the other parts embodiment of the present invention, the material of substrate 110
Comprising silicon or other semiconductor elements, such as germanium or iii-v element, but it is not limited, and the material of shallow slot isolation structure 112
Matter includes silica, silicon nitride, silicon oxynitride or other suitable insulating materials.
Phase-change memory 100 also there is a dielectric layer 130 to be located on substrate 110 and cover active member 120, and dielectric
Also there are multiple conductive contacts 135, these conductive contacts 135 are positioned at the top of drain electrode 124 and contact drain electrode 124, with even in layer 130
The active member 120 being connected in substrate 110.In the section Example of the present invention, conductive contact 135 includes metal, metallization
Compound or its combination, such as titanium, tantalum, tungsten, aluminium, copper, molybdenum, platinum, titanium nitride, tantalum nitride, ramet, tantalum nitride silicon, tungsten nitride, nitrogen
Change molybdenum, nitrogen oxidation molybdenum, ruthenium-oxide, titanium aluminium, TiAlN, carbon tantalum nitride, other suitable materials or its combination.
Bottom electrode 140 is then with through the coupling active member 120 of conductive contact 135 on conductive contact 135.In the present invention
Section Example in, bottom electrode 140 include titanium, titanium nitride, tantalum nitride, TiAlN, aluminium nitride tantalum or its combination.
Resistance impaired pieces 152 are located at the top of bottom electrode 140 and contact bottom electrode 140, and heater 154 is then embedded in resistance impaired pieces 152
In.And as shown in Figure 1A, the cross section profile of resistance impaired pieces 152 is U-shaped, that is to say, that resistance impaired pieces 152 cover the side of heater 154
Face, and extend between heater 154 and bottom electrode 140.In addition, the cross-sectional width W and thickness T of heater 154 are the smaller the better.
In some embodiments of the present invention, the cross-sectional width W of heater 154 is between 25 nanometers to 30 nanometers, and heater
154 thickness T is less than or equal to 3 nanometers, is even less than or equal to 2.5 nanometers, 2 nanometers, 1.5 nanometers or 1 nanometer, but be not limited to
This.
In some embodiments of the present invention, resistance impaired pieces 152 include tantalum nitride, aluminium nitride tantalum or its combination, it has
Relatively low heat conductivity, and the electrical of the phase-change memory 100 prepared can be lifted.In some embodiments of the present invention,
Heater 154 includes titanium, titanium nitride, tantalum nitride, TiAlN, aluminium nitride tantalum or its combination.It is real in the other parts of the present invention
Apply in mode, resistance impaired pieces 152 include tantalum nitride, and heater 154 includes titanium nitride.
In some embodiments of the present invention, at least two clearance walls 156 are also included in phase-change memory 100, and hinder
Barrier part 152 and heater 154 are located between these clearance walls 156.
Then please refer to Figure 1A and Figure 1B, Figure 1B illustrates the schematic perspective view of part-structure in Figure 1A.As Figure 1A with
Shown in Figure 1B, the first insulating layer 160 is located at the top of bottom electrode 140 and covers resistance impaired pieces 152 and heater 154, but the first insulation
This heater 154 is not completely covered in layer 160, and exposes the side 154a of heater 154.Top electrode 170 is exhausted positioned at first
The top of edge layer 160, and ring-type phase change layer 165 then surrounds insulating layer 160 and top electrode 170, and ring-type phase change layer 165 contacts
At least one side 154a of heater 154.Specifically, when active member 120 provides current to bottom electrode 140, electric current meeting
Sequentially enter ring-type phase transformation along bottom electrode 140, resistance impaired pieces 152 to heater 154, and the two sides 154a of self-heating device 154
Change layer 165, finally reach top electrode 170.If the contact area between heater 154 and ring-type phase change layer 165 is smaller, you can permits
Perhaps higher current density, and lift the efficiency of heating surface.
By taking present embodiment as an example, heater 154 is contacted with the side 154a at its both ends with ring-type phase change layer 165, because
Contact area between this heater 154 and ring-type phase change layer 165 is that the cross-sectional width W of heater 154 is multiplied by thickness T again
It is multiplied by 2.It is worth noting that, the top area of existing minimum column heater be about 700 square nanometers (about a diameter of 28~
The top area of 30 nanometers of cylindric heater).If the thickness T of heater 154 is 1 nanometer, cross-sectional width W is 25 nanometers, then
Contact area is about 50 square nanometers (25x1x2), much smaller than the top area of existing minimum column heater.If heater 154
Thickness T be 2 nanometers, cross-sectional width W be 25 nanometers, then contact area is about 100 square nanometers (25x2x2), be also smaller than it is existing most
The top area of small column heater.Consequently, it is possible to it can make phase-change memory 100 that there is extremely low reset current.
The present invention some embodiments in, the first insulating layer 160 include oxide, nitride, nitrogen oxides or its
Combination, such as silica, silicon nitride, silicon oxynitride or its combination, and top electrode 170 includes titanium, titanium nitride, tantalum nitride, nitridation
Aluminium titanium, aluminium nitride tantalum or its combination.In some embodiments of the present invention, ring-type phase change layer 165 includes Ge-Sb-Te
(Ge2Sb2Te5、Ge3Sb6Te5, GST), N doping Ge-Sb-Te (nitrogen-doped Ge2Sb2Te5), antimony telluride (Sb2Te)、
Germanium antimony (GeSb), indium doping antimony telluride (In-doped Sb2Te) or it is combined.
In some embodiments of the present invention, the upper surface and the upper surface of ring-type phase change layer 165 of top electrode 170 are
Copline.In some embodiments of the present invention, phase-change memory 100 is also located at two rings comprising the second insulating layer 180
Between shape phase change layer 165.In several embodiments, the second insulating layer 180 include oxide, nitride, nitrogen oxides or its
Combination, such as silica, silicon nitride, silicon oxynitride or its combination.
The present invention some embodiments in, phase-change memory 100 also comprising protective layer 185 cover top electrode 170,
165 and second insulating layer 180 of ring-type phase change layer.Protective layer 185 can be single or multi-layer structure.Implement in the part of the present invention
In mode, protective layer 185 includes oxide, nitride, nitrogen oxides or its combination, such as silica, silicon nitride, silicon oxynitride
Or its combination.In some embodiments of the present invention, protective layer 185 includes two layers (not illustrating), lower floor's covering top electrode
170th, 165 and second insulating layer 180 of ring-type phase change layer, wherein upper strata covering lower floor, lower floor are nitride, and upper strata is oxidation
Thing, but be not limited.
In some embodiments of the present invention, phase-change memory 100 is also powered on comprising the coupling of vertical interconnecting structure 195
Pole 170 or source electrode 122.Specifically, some vertical interconnecting structures 195 by protective layer 185 to contact top electrode 170, and its
His some vertical interconnecting structures 195 then by protective layer 185, the second insulating layer 180 with dielectric layer 130 to contact source electrode 122.
The present invention some embodiments in, vertical interconnecting structure 195 include metal, metallic compound or its combination, such as titanium, tantalum,
Tungsten, aluminium, copper, molybdenum, platinum, titanium nitride, tantalum nitride, ramet, tantalum nitride silicon, tungsten nitride, molybdenum nitride, nitrogen oxidation molybdenum, ruthenium-oxide, titanium
Aluminium, TiAlN, carbon tantalum nitride, other suitable materials or its combination.
Fig. 2,3,4,5,6A, 7,8A, 9,10,11 and 12 are the manufacture phase change memory according to the several embodiments of the present invention
The method of body, in the diagrammatic cross-section in processing procedure each stage.Please also refer to Figure 1A, carry out Fig. 2,3,4,5,6A, 7,8A, 9,
10th, before the process stage shown in 11 and 12, first provide substrate 110, then formed active member 120 in the substrate 110 and its
Top.In some embodiments of the present invention, source electrode 122 and drain electrode 124 are formed using dopping process, is recycled and is deposited, is micro-
Shadow forms grid 126 with etch process.The step of forming active member 120 can also include through suitable process technique and form grid
Dielectric layer (not illustrating), clearance wall (not indicating), shallow doped-drain and/or other elements.
Formed after active member 120, as shown in Figure 1A, form dielectric layer 130 above active member 120, re-form
Perforation run through dielectric layer 130, with expose a part for active member 120 (such as：Drain electrode is 124).Implement in the part of the present invention
In mode, dielectric layer 130 is formed using chemical vapor deposition or other suitable film deposition techniques, is made using lithographic and etching
Journey, laser drill processing procedure or other suitable processing procedures form the perforation through dielectric layer 130.
Formed after perforation, as shown in Figure 1A, conductive contact 135 is formed in perforation, to couple active member 120.
In some embodiments of the present invention, chemical vapor deposition, physical vapour deposition (PVD), atomic layer deposition, rotary coating process are utilized
Or other suitable processing procedures that formed form conductive contact 135.Then bottom electrode 140 is re-formed to conductive contact 135 with coupling
Active member 120.In some embodiments of the present invention, chemical vapor deposition, physical vapour deposition (PVD), atomic layer deposition are utilized
Product, rotary coating process or other suitable processing procedures that formed form bottom electrode 140.
After bottom electrode is formed, Fig. 2,3,4,5,6A, 7, the process stage of 8A, 9,10,11 and 12 are sequentially carried out.Scheming
2nd, in 3,4,5,6A, 7,8A, 9,10,11 and 12, substrate 110, active member 120 and conductive contact 135 shown in Figure 1A are omitted,
Only illustrate top and the bottom electrode 140 of dielectric layer 130.
Referring initially to Fig. 2, Fig. 2 illustrates the step to form patterned insulation layer 230 to bottom electrode 140 and dielectric layer 130.
In this step, first deposition of insulative material covering bottom electrode 140 and dielectric layer 130, then remove SI semi-insulation with patterning process
Material and form patterned insulation layer 230, make it have an opening 232 exposure bottom electrode 140.Specifically, as shown in Fig. 2,
First blanket-deposited insulating materials.The present invention some embodiments in, using physical vapour deposition (PVD), chemical vapor deposition,
Atomic layer deposition, other suitable deposition manufacture process or its combined deposition insulating materials, and insulating materials includes silica, nitridation
Silicon, silicon oxynitride or its combination.
And then (do not illustrate photoresist layer) on rotary coating to insulating materials, then light shield (is not painted with Exposure mode
Show) pattern be transferred to photoresist layer, to expose the upper surface of insulating materials.Finally use dry ecthing or wet etching processing procedure removal portion
The insulating materials divided, so that there is the patterned insulation layer 230 formed opening 232 to expose bottom electrode 140.This opening 232 has
Cross-sectional width W1, and opening 232 is overlapping with bottom electrode 140 in upright projection direction.
Then illustrate to form the step of clearance wall 156 is in 232 side wall of opening in Fig. 3 and Fig. 4.As shown in figure 3, it is initially formed one
Cover curtain layer 310 conformally overlay pattern insulating layer 230 and be open 232 side wall and bottom.Specifically, cover curtain layer 310
Thickness T1 is formed at the upper surface of patterned insulation layer 230 and the bottom of opening 232, and forms thickness T2 at the same time in opening
222 side-walls, wherein thickness T2 are more than thickness T1.It should be noted that thickness T1 described herein and T2 are and dielectric layer
130 thickness in vertical direction.It is with physical vaporous deposition, chemical vapor deposition in some embodiments of the present invention
Method, atomic layer deposition method, thermal oxide mode cvd silicon oxide, silicon nitride or silicon oxynitride, so that the cover curtain layer 310 formed has
Good step coverage, and can uniformly cover the side wall of opening 232.
Then in Fig. 4, anisotropic removes cover curtain layer 310, to form a clearance wall 156 in opening from cover curtain layer 310
232 side wall.In this step, it is to be in dielectric layer 130 with the reduction cover curtain layer 310 of anisotropic using a dry ecthing procedure
The thickness of vertical direction, and the cover curtain layer 310 at bottom of the upper surface of patterned insulation layer 230 with opening 232 is moved
Remove.However, positioned at opening 232 side-walls cover curtain layer 310 because with larger thickness T2 without being completely removed, its energy
Remaining clearance wall 156 is in the side wall of opening 232.It should be noted that clearance wall 156 makes the cross-sectional width of opening 232 be reduced from W1
To W2, and cross-sectional width W2 is more associated with the contact area between the heater and phase change layer being subsequently formed, will be in subsequent detailed.
Then as shown in Fig. 5, Fig. 6 A, side wall and the bottom of opening 232 of 512 coverage gap wall 156 of barrier wall are formed, and
Heating pad wall 522 is formed into the remainder of opening 232.First referring to Fig. 5, being initially formed the conformal covering of barrier material layer 510
Upper surface and side wall and the bottom of opening 232 of patterned insulation layer 230, clearance wall 156.Then, heating material layer is re-formed
520 covering barrier material layers 510, and partial heating material layer 520 enters in the remainder of opening 232 and by opening 232
Fill up.In some embodiments of the present invention, with physical vaporous deposition, chemical vapour deposition technique or atomic layer deposition method shape
Into barrier material layer 510 and heating material layer 520.
Afterwards as shown in Figure 6A, barrier material layer 510 and heating material layer 520 are ground, to form barrier wall 512 and heating
Wall 522 is in opening 232.In this step, with chemical mechanical milling method (chemical mechanical polishing,
CMP the barrier material layer 510 and heating material layer 520 of the top of patterned insulation layer 230 and clearance wall 156) are removed, with respectively from
Barrier material layer 510 forms barrier wall 512 and heating pad wall 522 with heating material layer 520.More continue to grind barrier wall after this
512 with heating pad wall 522 to cut down its thickness, enable heating pad wall 522 that there is very thin thickness T, and effectively reduce what is be subsequently formed
Contact area between heater and ring-type phase change layer.In addition, can simultaneous grinding patterned insulation layer in this fabrication steps
230 with clearance wall 156, it is respectively provided with the upper surface of general planar, therefore patterned insulation layer 230 and clearance wall after grinding
156 upper surface and the upper surface of barrier wall 512 and heating pad wall 522 can be copline.
Herein specifically, the width W of heating pad wall 522 can about be slightly less than the width W2 of opening 232, this is because barrier
Wall 512 is filled with opening 232 jointly with heating pad wall 522, but the barrier wall 512 with U shape profile can cover the side of heating pad wall 522
Wall and the bottom for extending to heating pad wall 522.Specifically, barrier wall 512 occupies the segment space of opening 232, and makes to fill up
Be open 232 remainders heating pad wall 522 width substantially can be less than opening 232 width W2.
Please continue to refer to Fig. 6 B, Fig. 6 B illustrate the upper schematic diagram of the processing procedure intermediate structure of Fig. 6 A.In other words, Fig. 6 A are
Profiles of Fig. 6 B along AA hatching lines.As shown in Figure 6B, the barrier wall 512 of formation, heating pad wall 522 can be horizontal with clearance wall 156
Across several bottom electrodes 140.
Then as shown in Fig. 7, Fig. 8 A, the barrier wall 512 of part and the heating pad wall 522 of part are removed, to form such as Figure 1B
Shown resistance impaired pieces 152 and heater 154.Please referring initially to Fig. 7, increase the thickness of patterned insulation layer 230 to cover heating pad wall
522 with barrier wall 512, and patterned insulation layer 230 also can coverage gap wall 156.And then deposition one conductive material 710 to
On patterned insulation layer 230.Once again on deposition of insulative material to patterned insulation layer 230, foot can be made it have in this step
Enough thickness and can coverage gap wall 156, heating pad wall 522 and barrier wall 512, redeposited conductive material 710 to patterning afterwards
On insulating layer 230.The depositional mode of insulating materials and conductive material can as described in Figure 2, and this will not be detailed here.In the portion of the present invention
Divide in embodiment, the insulating materials deposited in Fig. 7, its material can be same as the material of patterned insulation layer 230, or can be used
Other any suitable insulating materials, the spirit without influencing the present invention.
Referring next to Fig. 8 A and Fig. 8 B, wherein Fig. 8 B illustrate the upper schematic diagram of the processing procedure intermediate structure of Fig. 8 A.In Fig. 8 A
With in Fig. 8 B, removing the patterned insulation layer 230 of part and the conductive material 710 of part, to form the first insulating layer 160 respectively
With top electrode 170, and the barrier wall 512 of part and the heating pad wall 522 of part are removed, to form several separated resistance impaired pieces 152
With heater 154, wherein the first insulating layer 160 exposure heater 154 side 154a.Specifically, in this step to leading
Electric material 710 carries out a patterning process with patterned insulation layer 230, and top electrode 170 is formed to etch conductive material 710,
And in the lump etch patterning insulating layer 230 and formed the first insulating layer 160.The top electrode 170 of formation is located at the first insulating layer 160
On, and expose the dielectric layer 130 of part.It is worth noting that, as shown in Figure 8 B, patterning process can remove part at the same time
Heating pad wall 522 and barrier wall 512, script are separated into barrier wall 512 across the heating pad wall 522 of several bottom electrodes 140 more
A heater 154 as shown in Figure 1A and resistance impaired pieces 152.In in etching practice, the rectangular configuration of small size, final etch are defined
Result can form approximate circle structure, circular top electrode 170 of its top view shown in as Fig. 8 B, and its three-dimensional shape
As columned 170 and first insulating layer 160 of top electrode as shown in Figure 1B.Each independent heater 154 is corresponded to one
Bottom electrode 140, and the side 154a of the first insulating layer 160 exposure heater 154 formed after etching.It is real in the part of the present invention
Apply in mode, patterning process can more remove the clearance wall 156 of part at the same time to be blocked, and formed heating pad wall 522 with
Barrier wall 512 is located between two clearance walls 156.
It is worth noting that, heater 154 is the heating pad wall 522 to be formed from Fig. 6 A, thus the cross-sectional width W of heater with
Thickness T can be same as heating pad wall 522.As known from the above, the present invention forms this hair through deposition, grinding, lithographic and etch process
Bright heater 154, compared with conventional heater structure technology, the limit of lithographic and etch process is not adding for heater 154
The key of hot size.Conventional heater structure is to be contacted with the area of its upper surface with phase-transition material, but the present invention
The contact area of heater structure and phase-transition material is the product of the width W and the thickness T of heater 154 of heater 154.Such as
Preceding described, the present invention makes heater 154 that there is minimum width W (refer to figure using clearance wall 165 and resistance impaired pieces 152
6A), and with lapping mode make wall shape heater 154 that there is minimum thickness T (equally refer to Fig. 6 A).Therefore, it is not necessary to use
Complicated alignment or etching mechanism can effectively control the characteristic size of heater 152.
Then, form ring-type phase change layer 165 and surround heater 154.Specifically, as shown in figure 9, first blanket-deposited
Phase change layer 910 covers the first insulating layer 160 and top electrode 170.In some embodiments of the present invention, chemical gaseous phase is utilized
Deposition or other suitable film deposition techniques sedimentary facies change layers 910.Then, as shown in Figure 10, phase change layer 910 is carried out
Anisotropic spacer etch processing procedure (anisotropic spacer etch process), top electrode is removed with anisotropic
170 with the partial phase change layer 910 of the top of dielectric layer 130, and formed ring-type phase change layer 165 around the first insulating layer 160 with
Top electrode 170.And due to the side 154a of the first insulating layer 160 exposure heater 154, the ring-type phase change layer formed
165 by this side 154a of contact heater 154.
Afterwards as shown in figure 11, the second insulating layer 180 of deposition covering top electrode 170 and ring-type phase change layer 165, and part
The second insulating layer 180 insert between two ring-type phase change layers 165.In several embodiments, chemical vapor deposition is utilized
Or other suitable second insulating layers of film deposition techniques 180.
Then as shown in figure 12, planarization system is carried out to the second insulating layer 180, ring-type phase change layer 165 and top electrode 170
Journey.In several embodiments, planarization process includes chemical mechanical polishing manufacture procedure, grinding processing procedure, etch process or other conjunctions
Suitable material removes processing procedure.In several embodiments, after planarization process is carried out, ring-type phase change layer 165, top electrode
170 and second the upper surface of insulating layer 180 be copline.
Return to Figure 1A, the present invention some embodiments in, to the second insulating layer 180, ring-type phase change layer 165 and
After top electrode 170 carries out planarization process, more form protective layer 185 and cover ring-type phase change layer 165 and top electrode 170.Connect
And multiple perforation are more formed in a manner of lithography, some of which is punched through protective layer 185 to expose top electrode 170, and another
Outer some perforation then by protective layer 185, the second insulating layer 180 with dielectric layer 130 to expose source electrode 122.Afterwards using suitable
Mode deposit conductive material in these perforation, to prepare vertical interconnecting structure 195, and complete phase-change memory structure
Prepare.Some vertical interconnecting structures 195 therein contact top electrode 170, with via top electrode 170, ring-type phase change layer 165,
Heater 154, resistance impaired pieces 152, bottom electrode 140 are electrically connected to the drain electrode 124 of active member 120 with conductive contact 135.It is another
Aspect, some other vertical interconnecting structures 195 then contact the source electrode 122 of active member 120.
Although the present invention is disclosed above with embodiment, so it is not limited to the present invention, any to be familiar with this skill
Person, without departing from the spirit and scope of the present invention, when can be used for a variety of modifications and variations, therefore protection scope of the present invention is worked as
Subject to the scope of which is defined in the appended claims.
Claims (7)
- A kind of 1. method for manufacturing phase-change memory, it is characterised in that include：A patterned insulation layer is formed to a bottom electrode and a dielectric layer, and the patterned insulation layer has an opening exposure should Bottom electrode；A clearance wall is formed in the side wall of the opening；Form a barrier wall and cover the side wall of the clearance wall and the bottom of the opening；A heating pad wall is formed into the remainder of the opening；Increase the thickness of the patterned insulation layer to cover the heating pad wall and the barrier wall；A conductive material is deposited to the patterned insulation layer；The part patterned insulation layer, the part conductive material, the part barrier wall and the part heating pad wall are removed, to form one The one side of first insulating layer, a top electrode, a resistance impaired pieces and a heater, wherein first insulating layer exposing heater； AndA ring-type phase change layer is formed, which surrounds the heater, first insulating layer and the top electrode, and should Ring-type phase change layer contacts the side and top electrode of the heater.
- 2. the method for manufacture phase-change memory according to claim 1, it is characterised in that form the clearance wall and opened in this The step of side wall of mouth, includes：Form side wall and bottom that a cover curtain layer conformally covers the patterned insulation layer and the opening；AndThe cover curtain layer is anisotropically removed, to form the clearance wall in the side wall of the opening from the cover curtain layer.
- 3. the method for manufacture phase-change memory according to claim 1, it is characterised in that forming barrier wall covering should The side wall of clearance wall is included with the bottom of the opening with forming the step in the heating pad wall to the remainder of the opening：Formed a barrier material layer it is conformal covering the patterned insulation layer, the clearance wall upper surface and side wall and the opening Bottom；Form a heating material layer and cover the barrier material layer, and the part heating material layer is filled to the remainder of the opening In；AndThe barrier material layer and the heating material layer are ground, to form the barrier wall and the heating pad wall in the opening.
- 4. the method for manufacture phase-change memory according to claim 3, it is characterised in that also include：The patterned insulation layer and the clearance wall are ground, so that upper surface and the heating of the patterned insulation layer with the clearance wall The upper surface of wall is copline.
- 5. the method for manufacture phase-change memory according to claim 1, it is characterised in that the step of the ring-type phase change layer Suddenly include：Deposit a phase change layer and conformally cover first insulating layer and the top electrode；AndAnisotropic removes the phase change layer above the top electrode, to form the ring-type phase change layer.
- 6. the method for manufacture phase-change memory according to claim 5, it is characterised in that also include：Deposit one second insulating layer and cover the top electrode and the ring-type phase change layer；AndOne planarization process is carried out to second insulating layer, the top electrode and the ring-type phase change layer.
- 7. the method for manufacture phase-change memory according to claim 3, it is characterised in that the barrier material layer includes nitrogen Change tantalum, and the heating material layer includes titanium nitride.
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| CN101000945A (en) * | 2006-01-09 | 2007-07-18 | 财团法人工业技术研究院 | Phase storage element andmanuafcturing method thereof |
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| CN105428533A (en) | 2016-03-23 |
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