CN105483652B - Chemical vapor deposition unit and its application method - Google Patents
Chemical vapor deposition unit and its application method Download PDFInfo
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- CN105483652B CN105483652B CN201510898023.3A CN201510898023A CN105483652B CN 105483652 B CN105483652 B CN 105483652B CN 201510898023 A CN201510898023 A CN 201510898023A CN 105483652 B CN105483652 B CN 105483652B
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- bottom crown
- supporting plate
- crown
- chamber body
- pedestal
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The present invention provides a kind of chemical vapor deposition unit and its application method, and the chemical vapor deposition unit includes upper and lower pole plate, the deposition substrate above the bottom crown, the pedestal below the bottom crown and the support member below the pedestal being oppositely arranged；Wherein, it is connected between the support member, pedestal, bottom crown and deposition substrate by several threaded posts and the several nuts being sheathed on respectively in several threaded posts and above the deposition substrate；So as to which the diverse location of the bottom crown and the inclination of different angle can be achieved by adjusting the height of several nuts, so that the spacing between upper and lower pole plate is adjustable, in actual production film forming procedure, the bigger local spacing of thickness can be turned down, the less local spacing of Film Thickness Ratio is tuned up, so as to change thickness, film thickness uniformity is played a role in improving.
Description
Technical field
The present invention relates to chemical vapour deposition technique field, more particularly to a kind of chemical vapor deposition unit and its user
Method.
Background technology
Chemical vapor deposition (CVD, Chemical Vapor Deposition) is a kind of gas phase life for preparing thin-film material
Long method, it is one or more of compounds containing composition film element, elementary gas to be passed through the reaction for being placed with base material
Room, by the technology of space gas-phase chemical reaction depositing solid films on matrix surface.The reaction of chemical vapor deposition
Mechanism is：Reacting gas is imported in reactor, dissociation occurs in the presence of heat energy, electric energy or luminous energy and becomes Viability extremely strong
Ion or ion cluster (plasma), the ion or ion cluster by diffusion way reach solid substrate surface that chemistry occurs are anti-
Solid product should be generated and be deposited on substrate surface.
As shown in figure 1, it is a kind of existing chemical vapor deposition unit, it includes processing procedure chamber 100, located at processing procedure chamber 100
The interior and top crown (Diffuser) 200 that is oppositely arranged with bottom crown (Susceptor) 300 and in processing procedure chamber 100 and
Glass substrate 400 above the bottom crown 300, wherein, the processing procedure chamber 100 is the reacting environment of CVD film forming, gas
Ionized in processing procedure chamber 100, dissociation partly or entirely occurs and forms energetic atom, negative ions, electronics and gas molecule
Mixture, reach substrate surface and occur to chemically react and be deposited on glass substrate 400；The top crown 200 is used to allow reaction
Gas can uniformly reach the surface of glass substrate 400, so as to improve the uniformity of film forming；The bottom crown 300 gives glass base
Plate 400 provides a depth of parallelism heavy film platform and the process temperatures needed for the offer reaction of glass substrate 400 well.
For chemical vapor deposition, the spacing (spacing) between top crown 200 and bottom crown 300 is CVD film forming
Important technical parameter, it influences the distribution of ion cluster (plasma), so as to influence the sedimentation rate of film layer and into film uniformity.
Within the specific limits, when spacing increases, the thickness of film forming also increases.However, if spacing is too big, deposit speed is largely effected on
Degree, and cause particle (particle) problem, then it can have a strong impact on quality of forming film.If spacing is too small, from nozzle (Show
Head) air blast out is directly sprayed onto on glass substrate 400, and air blast directly impacts the surface of glass substrate 400, and ion may
Have little time deposit just to be taken away by air blast, this reduces rate of film build.So in appropriate scope, top crown is adjusted
200 with the spacing size of bottom crown 300, can accordingly change the thickness of film forming.
In actual production, the thickness of the both sides of processing procedure chamber 100 has differences.In the processing procedure cavity configuration shown in Fig. 1,
The dry pump (Dry Pump) 500 in the left side of processing procedure chamber 100 has the function that pumping, causes intracavitary both sides airflow asymmetry, i.e. a chamber left side
The current density of side is greater than the current density on right side.Furthermore at the vacuum valve (Slit Valve) 600 in the left side of processing procedure chamber 100
Sulculus is provided with, causes ion cluster (plasma) higher in this aggregation extent.In summary 2 points, the left side film forming of processing procedure chamber 100
Thickness be greater than right side film forming thickness, can cause the uneven of film forming using existing chemical vapor deposition unit.
The content of the invention
, can be according to film forming during use it is an object of the invention to provide a kind of chemical vapor deposition unit
Spacing size between the upper and lower pole plate of uniformity coefficient adjustment diverse location, the bigger local spacing of thickness is turned down, by film
The less local spacing of thickness rate is tuned up, and so as to change thickness, film thickness uniformity is played a role in improving.
The present invention also aims to provide a kind of application method of chemical vapor deposition unit, by adjusting chemical gaseous phase
The height of nut in precipitation equipment in the threaded post of diverse location, the spacing between the upper and lower pole plate of diverse location is adjusted, will
The bigger local spacing of thickness is turned down, and the less local spacing of Film Thickness Ratio is tuned up, so as to change thickness, plays improvement thickness
The effect of uniformity.
To achieve the above object, the present invention provides a kind of chemical vapor deposition unit, including the top crown being oppositely arranged with
Bottom crown, the deposition substrate above the bottom crown, the pedestal below the bottom crown and located at the pedestal
The support member of lower section；
Wherein, the pedestal includes being used for the first supporting plate for supporting the bottom crown and is fixedly connected on described the
The support block of one supporting plate center lower section；The support member includes the second supporting plate for supporting the pedestal and fixed
It is connected to the support column of the second supporting plate center lower section；
Between second supporting plate and the first supporting plate, bottom crown and deposition substrate by several threaded posts and point
Several nuts in several threaded posts and above the deposition substrate are not sheathed on to be connected；
The bottom of several threaded posts is fixedly connected with the second supporting plate respectively, first supporting plate, bottom crown and
Be respectively equipped with several first, second, third through holes in deposition substrate, several threaded posts through first supporting plate, under
First, second, third through hole in pole plate and deposition substrate simultaneously extends out, and several nuts are from the top of the deposition substrate
It is sheathed in several threaded posts, and realizes and be threadedly coupled between threaded post, so as to by adjusts the height of several nuts i.e.
The diverse location of the bottom crown and the inclination of different angle can be achieved so that the spacing between upper and lower pole plate is adjustable.
It is connected between the support member and pedestal, bottom crown and deposition substrate by two threaded posts and two nuts,
And described two threaded posts are located at the left and right sides of the bottom crown respectively.
The upper and lower pole plate is about two pieces parallel electrodes, wherein, the top crown is connected with radio-frequency power supply, described
Bottom crown is grounded.
The deposition substrate is glass substrate.
First supporting plate is circular or triangle substrate with the second supporting plate.
The pedestal is connected to stepper motor by transmission device, lifts bottom crown in a stepwise manner.
The chemical vapor deposition unit also includes chamber body, and the top crown, bottom crown, deposition substrate, pedestal are equal
Inside the chamber body, the second supporting plate of the support member is located inside the chamber body, the support member
The top of support column is located inside the chamber body, and bottom passes from the chamber body, outside the chamber body；
The chamber body is provided with the air admission hole for being used for that reacting gas is passed through to chamber body inside.
The support column is externally provided with horizontal direction stop collar, and the horizontal direction stop collar is located at the outer of the chamber body
Portion, and be fixed on by bindiny mechanism on wall.
The present invention also provides a kind of application method of chemical vapor deposition unit, comprises the following steps：
Step 1, provide a chemical vapor deposition unit, its top crown for including being oppositely arranged with bottom crown, located at described
Deposition substrate above bottom crown, the pedestal below the bottom crown and the support member below the pedestal；
Wherein, the pedestal includes being used for the first supporting plate for supporting the bottom crown and is fixedly connected on described the
The support block of one supporting plate center lower section；The support member includes the second supporting plate for supporting the pedestal and fixed
It is connected to the support column of the second supporting plate center lower section；
Between second supporting plate and the first supporting plate, bottom crown and deposition substrate by several threaded posts and point
Several nuts in several threaded posts and above the deposition substrate are not sheathed on to be connected；
The bottom of several threaded posts is fixedly connected with the second supporting plate respectively, first supporting plate, bottom crown and
Be respectively equipped with several first, second, third through holes in deposition substrate, several threaded posts through first supporting plate, under
First, second, third through hole in pole plate and deposition substrate simultaneously extends out, and several nuts are from the top of the deposition substrate
It is sheathed in several threaded posts, and realizes and be threadedly coupled between threaded post；The chamber body, which is provided with, to be used for chamber
Body interior is passed through the air admission hole of reacting gas；
Step 2, reacting gas is passed through to chamber body inside by air admission hole, radio-frequency power supply is by top crown to chamber sheet
Internal portion provides energy, and bottom crown is directly grounded as bottom electrode, so as to produce rf electric field between top crown and bottom crown,
Reacting gas is excited into plasma, and then the deposition substrate to being positioned on bottom crown carries out plated film；
Step 3, when the situation that the film forming thickness for occurring diverse location on bottom crown in the step 2 differs, it is heavy to stop
Product processing procedure, open chamber body, the height of the nut in threaded post by adjusting diverse location, adjust diverse location it is upper,
Spacing between bottom crown, the bigger local spacing of thickness is turned down, the less local spacing of Film Thickness Ratio tuned up, so as to change
Become thickness, play a part of improving film thickness uniformity.
In the chemical vapor deposition unit, pass through two between the support member and pedestal, bottom crown and deposition substrate
Threaded post and two nuts are connected, and described two threaded posts are located at the left and right sides of the bottom crown respectively；
In step 2, when the thickness of film forming is greater than the thickness of right side film forming on the left of bottom crown, in the step 3, lead to
Cross and twist the nut on the left of bottom crown upwards, the nut on the right side of bottom crown is screwed down, so that the left side of bottom crown is upward
Tilting, right side tilts down, and now, the spacing of the upper and lower pole plate in left side diminishes, and the spacing of the upper and lower pole plate on right side becomes big, from
And reduce left side rate of film build and thickness, improve right side rate of film build and thickness, and then improve bottom crown on film forming it is equal
Even property；
In step 2, when the thickness of film forming is greater than the thickness of left side film forming on the right side of bottom crown, in the step 3, lead to
Cross and twist the nut on the right side of bottom crown upwards, the nut on the left of bottom crown is screwed down, so that the right side of bottom crown is upward
Tilting, left side tilts down, and now, the spacing of the upper and lower pole plate on right side diminishes, and the spacing of the upper and lower pole plate in left side becomes big, from
And reduce right side rate of film build and thickness, improve left side rate of film build and thickness, and then improve bottom crown on film forming it is equal
Even property.
Beneficial effects of the present invention：A kind of chemical vapor deposition unit provided by the invention and its application method, describedization
Learn upper and lower pole plate, the deposition substrate above the bottom crown that vapor phase growing apparatus includes being oppositely arranged, under described
Pedestal below pole plate and the support member below the pedestal；Wherein, the support member, pedestal, bottom crown and heavy
It is sheathed between product substrate by several threaded posts and respectively in several threaded posts and number above the deposition substrate
Individual nut is connected；So as to which the diverse location and different angle of the bottom crown can be achieved by adjusting the height of several nuts
Inclination so that the spacing between upper and lower pole plate is adjustable, can be by the bigger place of thickness in actual production film forming procedure
Spacing is turned down, and the less local spacing of Film Thickness Ratio is tuned up, so as to change thickness, film thickness uniformity played a role in improving.
Brief description of the drawings
In order to be further understood that the feature of the present invention and technology contents, refer to below in connection with the detailed of the present invention
Illustrate and accompanying drawing, however accompanying drawing only provide with reference to and explanation use, be not used for being any limitation as the present invention.
In accompanying drawing,
Fig. 1 is a kind of existing structural representation of chemical vapor deposition unit；
Fig. 2 is the structural representation of the chemical vapor deposition unit of the present invention；
Fig. 3 is the effect diagram after the spacing adjustment of upper and lower pole plate in chemical vapor deposition unit of the invention.
Embodiment
Further to illustrate the technological means and its effect of the invention taken, below in conjunction with being preferable to carry out for the present invention
Example and its accompanying drawing are described in detail.
Referring to Fig. 2, the present invention provides a kind of chemical vapor deposition unit, including the top crown 10 being oppositely arranged and lower pole
Plate 20, the deposition substrate 30 above the bottom crown 20, the pedestal 40 located at the lower section of the bottom crown 20 and located at institute
State the support member 50 of the lower section of pedestal 40；
Wherein, the pedestal 40 is included for supporting the first supporting plate 41 of the bottom crown 20 and being fixedly connected on
The support block 42 of the center of first supporting plate 41 lower section；The support member 50 includes being used for second that supports the pedestal 40
Fagging 51 and the support column 52 for being fixedly connected on the center of the second supporting plate 51 lower section；
Specifically, pass through number between the supporting plate 41 of the second supporting plate 51 and first, bottom crown 20 and deposition substrate 30
Individual threaded post 60 and the phase of several nuts 70 for being sheathed in several threaded posts 60 and being located above the deposition substrate 30 respectively
Connection；
Specifically, the bottom of several threaded posts 60 is fixedly connected with the second supporting plate 51 respectively, first support
Several first, second, third through holes 43,23,33, several spiral shells are respectively equipped with plate 41, bottom crown 20 and deposition substrate 30
Line post 60 pass through first, second, third through hole 43 in first supporting plate 41, bottom crown 20 and deposition substrate 30,23,
33 and extend out, several nuts 70 are sheathed in several threaded posts 60 from the top of the deposition substrate 30, and and screw thread
Threaded connection is realized between post 60, so as to which the different positions of the bottom crown 20 can be achieved by adjusting the height of several nuts 70
Put and the inclination of different angle so that the spacing between upper and lower pole plate 10,20 is adjustable, and film thickness uniformity is played a role in improving.
As shown in Fig. 2 in embodiment provided by the invention, the support member 50 and pedestal 40, bottom crown 20 and deposition
It is connected between substrate 30 by two threaded posts 60 and two nuts 70, and described two threaded posts 60 are respectively under described
The left and right sides of pole plate 20.
In chemical vapor deposition processes, when the thickness of the left side film forming of bottom crown 20 is greater than the thickness of right side film forming,
The nut 70 in the left side of bottom crown 20 can be twisted upwards, the nut 70 on the right side of bottom crown 20 is screwed down, so that bottom crown
20 left side is inclined upwardly, and right side tilts down, and realizes effect as shown in Figure 3, now, the upper and lower pole plate 10,20 in left side
Spacing (spacing) diminishes, and the spacing (spacing) of the upper and lower pole plate 10,20 on right side becomes big, so as to reduce the film forming in left side
Speed and thickness, the rate of film build and thickness on right side are improved, and then improve the uniformity of film forming on bottom crown 20.
Conversely, when the thickness of the right side film forming of bottom crown 20 is greater than the thickness of left side film forming, can be right by bottom crown 20
The nut 70 of side is twisted upwards, and the nut 70 in the left side of bottom crown 20 is screwed down, so that the right side of bottom crown 20 is inclined upwardly,
Left side tilts down, and now, the spacing (spacing) of the upper and lower pole plate 10,20 on right side diminishes, the upper and lower pole plate 10 in left side,
20 spacing (spacing) becomes big, so as to reduce the rate of film build and thickness on right side, improves the rate of film build and thickness in left side,
And then improve the uniformity of film forming on bottom crown 20.
Similarly, can be by adjusting bottom crown 20 front and rear when threaded post 60 is distributed in the front and back position of bottom crown 20
The angle of inclination in direction, so as to adjust the fore-and-aft direction of bottom crown 20 into film uniformity.Specifically, the threaded post 60 can be with
Uniform distribution is adjusted on bottom crown 20 by adjusting the height of nut 70 of diverse location in the other positions of bottom crown 20
The uniformity of film forming.
Specifically, the upper and lower pole plate 10,20 is about two pieces parallel electrodes, wherein, the top crown 10 and radio frequency
Power supply 11 is connected, and the bottom crown 20 is grounded.
Specifically, the deposition substrate 30 is the underlay substrate that reacting gas deposits film forming, it is preferred that the deposition substrate
30 be glass substrate.
Specifically, the supporting plate 51 of the first supporting plate 41 and second can be circular, triangle or other shapes of base
Plate.
Specifically, the pedestal 40 is connected to stepper motor by transmission device, bottom crown 20 is lifted in a stepwise manner.
Specifically, the chemical vapor deposition unit also includes chamber body 90, the top crown 10, bottom crown 20, sink
Product substrate 30, pedestal 40 are respectively positioned on inside the chamber body 90, and the second supporting plate 51 of the support member 50 is located at the chamber
Inside room body 90, the top of the support column 52 of the support member 50 is located inside the chamber body 90, and bottom is from the chamber
Room body 90 passes, outside the chamber body 90.
Specifically, the chamber body 90 is provided with the air admission hole for being used for that reacting gas is passed through to the inside of chamber body 90
91。
Specifically, the support column 52 is externally provided with horizontal direction stop collar 80, the horizontal direction stop collar 80 is located at institute
The outside of chamber body 90 is stated, and is fixed on by bindiny mechanism on wall or other objects, when the pedestal 40 is in stepping horse
When being moved up and down under the drive reached, because pedestal 40 is connected with support member 50 by threaded post 60 with nut 70, so as to support member
50 can also move up and down with pedestal 40, and now, the horizontal direction stop collar 80 plays horizontal direction limit to the support column 52
The effect of position.
Fig. 2-3 are referred to, the present invention also provides a kind of application method of chemical vapor deposition unit, comprised the following steps：
Step 1, as shown in Figure 2 a, there is provided chemical vapor deposition unit, it includes the top crown 10 that is oppositely arranged and lower pole
Plate 20, the deposition substrate 30 above the bottom crown 20, the pedestal 40 located at the lower section of the bottom crown 20 and located at institute
State the support member 50 of the lower section of pedestal 40；
Wherein, the pedestal 40 is included for supporting the first supporting plate 41 of the bottom crown 20 and being fixedly connected on
The support block 42 of the center of first supporting plate 41 lower section；The support member 50 includes being used for second that supports the pedestal 40
Fagging 51 and the support column 52 for being fixedly connected on the center of the second supporting plate 51 lower section；
Pass through several screw threads between the supporting plate 41 of second supporting plate 51 and first, bottom crown 20 and deposition substrate 30
Post 60 and the several nuts 70 being sheathed on respectively in several threaded posts 60 and positioned at the top of deposition substrate 30 are connected；
The bottom of several threaded posts 60 is fixedly connected with the second supporting plate 51 respectively, first supporting plate 41, under
Several first, second, third through holes 43,23,33, several threaded posts 60 are respectively equipped with pole plate 20 and deposition substrate 30
Through first, second, third through hole 43,23,33 in first supporting plate 41, bottom crown 20 and deposition substrate 30 and prolong
Stretching is gone, and several nuts 70 are sheathed in several threaded posts 60 from the top of the deposition substrate 30, and with threaded post 60 it
Between realize threaded connection；
The chemical vapor deposition unit also includes chamber body 90, the top crown 10, bottom crown 20, deposition substrate
30th, pedestal 40 is respectively positioned on inside the chamber body 90, and the second supporting plate 51 of the support member 50 is located at the chamber body
Inside 90, the top of the support column 52 of the support member 50 is located inside the chamber body 90, and bottom is from the chamber body
90 pass, outside the chamber body 90；The chamber body 90, which is provided with, to be used for being passed through instead to the inside of chamber body 90
Answer the air admission hole 91 of gas；
Step 2, by air admission hole 91 to reacting gas is passed through inside chamber body 90, radio-frequency power supply 11 passes through top crown 10
Energy is provided inside to chamber body 90, bottom crown 20 is directly grounded as bottom electrode, so as in top crown 10 and bottom crown 20
Between produce rf electric field, reacting gas is excited into plasma, and then the deposition substrate 30 to being positioned on bottom crown 20
Carry out plated film；
Step 3, as shown in figure 3, the feelings to differ when the film forming thickness for occurring diverse location on bottom crown 20 in the step 2
During condition, stopping deposition manufacture process, opening chamber body 90, the height of the nut 70 in threaded post 60 by adjusting diverse location,
Adjust diverse location upper and lower pole plate 10,20 between spacing, the bigger local spacing of thickness is turned down, by Film Thickness Ratio compared with
Small local spacing tunes up, and so as to change thickness, plays a part of improving film thickness uniformity.
Preferably, in the chemical vapor deposition unit, the support member 50 and pedestal 40, bottom crown 20 and deposition base
It is connected between plate 30 by two threaded posts 60 and two nuts 70, and described two threaded posts 60 are located at the lower pole respectively
The left and right sides of plate 20.
In step 2, when the thickness of the left side film forming of bottom crown 20 is greater than the thickness of right side film forming, in the step 3,
By the way that the nut 70 in the left side of bottom crown 20 is twisted upwards, the nut 70 on the right side of bottom crown 20 is screwed down, so that bottom crown
20 left side is inclined upwardly, and right side tilts down, and realizes effect as shown in Figure 3, now, the upper and lower pole plate 10,20 in left side
Spacing (spacing) diminishes, and the spacing (spacing) of the upper and lower pole plate 10,20 on right side becomes big, so as to reduce the film forming in left side
Speed and thickness, the rate of film build and thickness on right side are improved, and then improve the uniformity of film forming on bottom crown 20.
In step 2, when the thickness of the right side film forming of bottom crown 20 is greater than the thickness of left side film forming, in the step 3,
By the way that the nut 70 on the right side of bottom crown 20 is twisted upwards, the nut 70 in the left side of bottom crown 20 is screwed down, so that bottom crown
20 right side is inclined upwardly, and left side tilts down, and now, the spacing (spacing) of the upper and lower pole plate 10,20 on right side diminishes, left
The spacing (spacing) of the upper and lower pole plate 10,20 of side becomes big, so as to reduce the rate of film build and thickness on right side, improves left side
Rate of film build and thickness, and then improve the uniformity of film forming on bottom crown 20.
In summary, a kind of chemical vapor deposition unit provided by the invention and its application method, the chemical vapor deposition
Upper and lower pole plate that product device includes being oppositely arranged, the deposition substrate above the bottom crown, below the bottom crown
Pedestal and the support member below the pedestal；Wherein, the support member, pedestal, bottom crown and deposition substrate it
Between be sheathed on by several threaded posts and respectively in several threaded posts and several nut phases above the deposition substrate
Connection；So as to which the diverse location of the bottom crown and the inclination of different angle can be achieved by adjusting the height of several nuts,
So that the spacing between upper and lower pole plate is adjustable, in actual production film forming procedure, the bigger local spacing of thickness can be adjusted
It is small, the less local spacing of Film Thickness Ratio is tuned up, so as to change thickness, film thickness uniformity played a role in improving.
It is described above, for the person of ordinary skill of the art, can be with technique according to the invention scheme and technology
Other various corresponding changes and deformation are made in design, and all these changes and deformation should all belong to the appended right of the present invention
It is required that protection domain.
Claims (9)
- A kind of 1. chemical vapor deposition unit, it is characterised in that including be oppositely arranged top crown (10) and bottom crown (20), set Deposition substrate (30) above the bottom crown (20), the pedestal (40) below the bottom crown (20) and it is located at Support member (50) below the pedestal (40)；Wherein, the pedestal (40) is included for supporting the first supporting plate (41) of the bottom crown (20) and being fixedly connected Support block (42) in first supporting plate (41) center lower section；The support member (50) includes being used to support the pedestal (40) the second supporting plate (51) and the support column (52) for being fixedly connected on the second supporting plate (51) center lower section；By several between second supporting plate (51) and the first supporting plate (41), bottom crown (20) and deposition substrate (30) Threaded post (60) and it is sheathed on respectively in several threaded posts (60) and several nuts above the deposition substrate (30) (70) it is connected；The bottom of several threaded posts (60) is fixedly connected with the second supporting plate (51) respectively, first supporting plate (41), Several first, second, third through holes (43,23,33) are respectively equipped with bottom crown (20) and deposition substrate (30), it is described several Threaded post (60) passes through first, second, third in first supporting plate (41), bottom crown (20) and deposition substrate (30) Through hole (43,23,33) simultaneously extends out, and several nuts (70) are sheathed on several threaded posts above the deposition substrate (30) (60) on, and realize and be threadedly coupled between threaded post (60), so that can be real by adjusting the height of several nuts (70) The diverse location of the existing bottom crown (20) and the inclination of different angle so that the spacing between upper and lower pole plate (10,20) can Adjust；Pass through two threaded posts (60) between the support member (50) and pedestal (40), bottom crown (20) and deposition substrate (30) And two nuts (70) are connected, and described two threaded posts (60) are located at the left and right sides of the bottom crown (20) respectively.
- 2. chemical vapor deposition unit as claimed in claim 1, it is characterised in that the upper and lower pole plate (10,20) is two pieces Parallel electrode up and down, wherein, the top crown (10) is connected with radio-frequency power supply (11), bottom crown (20) ground connection.
- 3. chemical vapor deposition unit as claimed in claim 1, it is characterised in that the deposition substrate (30) is glass base Plate.
- 4. chemical vapor deposition unit as claimed in claim 1, it is characterised in that first supporting plate (41) and second Fagging (51) is circular or triangle substrate.
- 5. chemical vapor deposition unit as claimed in claim 1, it is characterised in that the pedestal (40) is connected by transmission device Stepper motor is connected to, lifts bottom crown (20) in a stepwise manner.
- 6. chemical vapor deposition unit as claimed in claim 1, it is characterised in that the chemical vapor deposition unit also includes Chamber body (90), the top crown (10), bottom crown (20), deposition substrate (30), pedestal (40) are respectively positioned on the chamber sheet Body (90) is internal, and the second supporting plate (51) of the support member (50) is located at the chamber body (90) inside, the support member (50) top of support column (52) is located at the chamber body (90) inside, and bottom passes from the chamber body (90), position It is outside in the chamber body (90)；The chamber body (90), which is provided with, to be used for being passed through reaction gas to the inside of chamber body (90) The air admission hole (91) of body.
- 7. chemical vapor deposition unit as claimed in claim 6, it is characterised in that the support column (52) is externally provided with level side To stop collar (80), the horizontal direction stop collar (80) is located at the outside of the chamber body (90), and passes through bindiny mechanism It is fixed on wall.
- 8. a kind of application method of chemical vapor deposition unit, it is characterised in that comprise the following steps：Step 1, a chemical vapor deposition unit is provided, its top crown (10) for including being oppositely arranged and bottom crown (20), be located at Deposition substrate (30) above the bottom crown (20), the pedestal (40) below the bottom crown (20) and located at institute State the support member (50) below pedestal (40)；Wherein, the pedestal (40) is included for supporting the first supporting plate (41) of the bottom crown (20) and being fixedly connected Support block (42) in first supporting plate (41) center lower section；The support member (50) includes being used to support the pedestal (40) the second supporting plate (51) and the support column (52) for being fixedly connected on the second supporting plate (51) center lower section；By several between second supporting plate (51) and the first supporting plate (41), bottom crown (20) and deposition substrate (30) Threaded post (60) and it is sheathed on respectively in several threaded posts (60) and several nuts above the deposition substrate (30) (70) it is connected；The bottom of several threaded posts (60) is fixedly connected with the second supporting plate (51) respectively, first supporting plate (41), Several first, second, third through holes (43,23,33) are respectively equipped with bottom crown (20) and deposition substrate (30), it is described several Threaded post (60) passes through first, second, third in first supporting plate (41), bottom crown (20) and deposition substrate (30) Through hole (43,23,33) simultaneously extends out, and several nuts (70) are sheathed on several threaded posts above the deposition substrate (30) (60) on, and realize and be threadedly coupled between threaded post (60)；The chemical vapor deposition unit also includes chamber body (90), the top crown (10), bottom crown (20), deposition substrate (30), pedestal (40) is respectively positioned on the chamber body (90) inside, and the second supporting plate (51) of the support member (50) is located at institute Chamber body (90) inside is stated, the top of the support column (52) of the support member (50) is located at the chamber body (90) inside, Bottom passes from the chamber body (90), outside positioned at the chamber body (90)；The chamber body (90), which is provided with, to be used To be passed through the air admission hole (91) of reacting gas to chamber body (90) inside；In the chemical vapor deposition unit, the support member (50) and pedestal (40), bottom crown (20) and deposition substrate (30) Between be connected by two threaded posts (60) and two nuts (70), and described two threaded posts (60) are respectively under described The left and right sides of pole plate (20)；Step 2, by air admission hole (91) to reacting gas is passed through inside chamber body (90), radio-frequency power supply (11) passes through top crown (10) it is directly grounded to offer energy, bottom crown (20) inside chamber body (90) as bottom electrode, so as in top crown (10) Rf electric field is produced between bottom crown (20), reacting gas is excited into plasma, and then to being positioned over bottom crown (20) On deposition substrate (30) carry out plated film；Step 3, when the situation that the film forming thickness for occurring diverse location on bottom crown (20) in the step 2 differs, it is heavy to stop Product processing procedure, chamber body (90) is opened, the height of the nut (70) in threaded post (60) by adjusting diverse location, regulation is not With the spacing between the upper and lower pole plate (10,20) of position, the bigger local spacing of thickness is turned down, Film Thickness Ratio is less Local spacing tunes up, and so as to change thickness, plays a part of improving film thickness uniformity.
- 9. the application method of chemical vapor deposition unit as claimed in claim 8, it is characterised in thatIn step 2, when the thickness of film forming is greater than the thickness of right side film forming on the left of bottom crown (20), in the step 3, lead to Cross and twist the nut (70) on the left of bottom crown (20) upwards, the nut (70) on the right side of bottom crown (20) is screwed down, so that Bottom crown is inclined upwardly on the left of (20), and right side tilts down, and now, the spacing of the upper and lower pole plate (10,20) in left side diminishes, The spacing of the upper and lower pole plate (10,20) on right side becomes big, so as to reduce the rate of film build and thickness in left side, improves the film forming on right side Speed and thickness, and then improve the uniformity of film forming on bottom crown (20)；In step 2, when the thickness of film forming is greater than the thickness of left side film forming on the right side of bottom crown (20), in the step 3, lead to Cross and twist the nut (70) on the right side of bottom crown (20) upwards, the nut (70) on the left of bottom crown (20) is screwed down, so that Bottom crown is inclined upwardly on the right side of (20), and left side tilts down, and now, the spacing of the upper and lower pole plate (10,20) on right side diminishes, The spacing of the upper and lower pole plate (10,20) in left side becomes big, so as to reduce the rate of film build and thickness on right side, improves the film forming in left side Speed and thickness, and then improve the uniformity of film forming on bottom crown (20).
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106086807B (en) * | 2016-07-22 | 2018-04-20 | 京东方科技集团股份有限公司 | A kind of bottom crown and precipitation equipment for precipitation equipment |
| CN108342715B (en) * | 2018-03-05 | 2021-01-15 | 深圳市华星光电半导体显示技术有限公司 | Chemical vapor deposition device |
| CN110117781A (en) * | 2019-04-08 | 2019-08-13 | 深圳市华星光电技术有限公司 | Pole plate spacing adjusting device and adjustment equipment |
| CN110066981B (en) * | 2019-06-17 | 2023-11-28 | 浙江晶驰光电科技有限公司 | Forward-loading substrate positioning device and substrate loading method |
| CN112410764A (en) * | 2019-08-23 | 2021-02-26 | 长鑫存储技术有限公司 | Vapor deposition apparatus, adjustment method, apparatus, system, medium, and electronic device |
| CN110831312B (en) * | 2019-11-07 | 2021-01-15 | 大连理工大学 | Efficient plasma gas-liquid discharge system |
| CN116021694B (en) * | 2023-03-29 | 2023-06-02 | 沈阳恒久安泰环保与节能科技有限公司 | Solution casting large film device and method |
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