TW201901797A - Process chamber and semiconductor processing apparatus - Google Patents

Abstract

Disclosed are a process chamber and a semiconductor processing apparatus. The process chamber comprises: a chamber body, an upper electrode plate, a heat source arranged at the top in the chamber body, and a substrate arranged at the bottom in the chamber body. The heat source is arranged opposite a substrate area, wherein a gas transmission channel is arranged in the upper electrode plate, and the upper electrode plate can move between a pre-cleaning process position and a degassing process position; where the upper electrode plate is located in the pre-cleaning process position, the upper electrode plate is located between the heat source and the substrate, and the upper electrode plate is directly opposite the substrate area, so as to carry out a pre-cleaning process on a workpiece to be processed with the help of a process gas from the gas transmission channel; and where the upper electrode plate is located in the degassing process position, the upper electrode plate deviates from the substrate area, and the heat source is directly opposite the substrate area, so as to carry out a degassing process on the workpiece to be processed. The process chamber and the semiconductor processing apparatus can increase the process gas utilization rate and the pre-cleaning effect.

Description

Process chamber and semiconductor processing device

The present invention relates to the field of plasma devices, and more particularly to a process chamber and a semiconductor processing device.

Plasma devices are widely used in the manufacturing fields of semiconductors, solar cells, and flat panel displays. Common plasma devices include capacitively coupled plasma (CCP), Inductively Coupled Plasma (ICP), and Electron Cyclotron Resonance (ECR). These plasma devices are generally available in plasma etching, physical vapor deposition (PVD), chemical vapor deposition (CVD), and enhanced chemical vapor deposition (PECVD). Used in the processing process.

The use of a large amount of gas is required for the use of a plasma device, and how to optimize the supply of gas has become a technical problem that needs to be solved in the field.

Taking a physical vapor deposition process as an example, the process is a commonly used processing technique in the field of microelectronics, for example, for processing copper interconnect layers in integrated circuits. The fabrication of the copper interconnect layer mainly includes steps of degassing, pre-cleaning, Ta(N) deposition, and Cu deposition. Wherein, the degassing process generally heats the workpiece to be processed, for example, the workpiece to be processed, for example, to be processed by a heat source, and removes the gas after vacuuming. The purpose of the pre-cleaning is to remove contaminants, grooves and residues at the bottom of the perforated surface of the workpiece to be treated of the workpiece to be treated before depositing the metal film. A common pre-cleaning process refers to exciting a process gas such as Ar (argon gas) or He (helium gas) into a plasma, and treating the surface of the workpiece to be treated by the chemical reaction and physical bombardment of the plasma. In the prior art, the physical vapor deposition apparatus integrates the degassing chamber and the pre-cleaning chamber into one processing chamber. As shown in Fig. 1, the processing chamber includes a cavity 1', a garage 2', and a base. 3', the electrode plate 4', and the rotating mechanism 6', the cavity 1' is in communication with the garage 2', the base 3' is located in the cavity 1', and the workpiece 7' to be treated is placed on the surface of the base 3'. The pedestal 3' is electrically connected to a radio frequency power source (not shown). An air inlet 11' and an air outlet 12' are disposed in the cavity 1', the air inlet 11' is opened on the side wall of the cavity 1', and the air outlet 12' is opened on the bottom wall of the cavity 1', and The terminal is connected to the vacuum pump; in addition, a heating bulb 13' is further disposed at the upper portion of the cavity 1'.

When pre-cleaning is performed, the electrode plate 4' is rotated into the cavity 1', opposite to the workpiece 7' to be treated on the base 3', and the process gas enters the cavity 1' from the air inlet. The process gas is excited by the voltage formed between the electrode plate 4' and the susceptor 3' to be plasma, and the plasma bombards the surface of the workpiece 7' to be treated, thereby realizing pre-cleaning of the workpiece 7' to be processed. The middle arrow is a schematic representation of the flow path of the process gas within the processing chamber. When degassing is performed, the electrode plate 4' is rotated into the garage 2', the heating bulb 13' is turned on, and the workpiece 7' to be treated is heated, and the vacuum pump extracts the gas therein to effect a degassing process.

In the prior art, since the top wall of the cavity is provided with the heating bulb 13', the air inlet is not provided on the top wall of the cavity, so the air inlet 11' is provided on the side wall of the cavity, but the air intake of the side wall exists as follows Problem: The process gas is easily pumped away from the gas outlet 12' by the vacuum pump, and only partially enters between the base 3' and the electrode plate 4', resulting in a low utilization rate of the process gas; and the process gas is self-cavity 1' The air inlet 11' on the side wall enters the cavity 1', and the path length difference to the surface of the workpiece 7' to be processed is large, resulting in uneven plasma energy generated by the excitation, which directly affects the effect of pre-cleaning.

The present invention provides a process chamber and a semiconductor processing apparatus that solve at least the technical problems of the prior art process gases that are not utilized due to side intake and the resulting plasma energy non-uniformity.

According to an aspect of the present invention, there is provided a process chamber for degassing and pre-cleaning a workpiece to be processed, the chamber comprising: a cavity, an upper electrode plate, and a heat source disposed at a top of the cavity a base disposed at a bottom of the cavity, the base being configured to carry the workpiece to be processed; wherein the heat source is disposed opposite to the base region; wherein the upper electrode plate is provided with a gas passage and the upper electrode The position of the plate is movable between a pre-cleaning process position and a degassing process position; wherein, in the case where the upper electrode plate is in the pre-cleaning process position, the upper electrode plate is located between the heat source and the base, The electrode plate is directly opposite to the pedestal region to pre-clean the workpiece to be processed by means of a process gas from the gas passage; and the upper electrode plate is offset when the upper electrode plate is at the degassing process position In the pedestal area, the heat source is directly opposite to the pedestal area to perform a degassing process on the workpiece to be processed.

Wherein, the upper electrode plate comprises an electrode plate body; the electrode plate body is provided with an air inlet, an air flow channel and an air outlet, and the air flow channel communicates with the air inlet and the air outlet; the process gas is from the air inlet Entering the air flow passage and flowing out of the electrode plate body from the air outlet.

Wherein the electrode plate body is in the shape of a disk; the air flow channel is disposed inside the electrode plate body; the air inlet is disposed on the sidewall of the electrode plate body along the thickness direction; the air outlet is disposed on the electrode plate body On the surface opposite the base.

Wherein, the upper electrode plate further comprises an electrode shimming plate, wherein the electrode shimming plate is provided with a merging hole; the electrode shimming plate is disposed below the electrode plate body, and the positive electrode plate is positive on the lower surface of the electrode plate body The projection covers the air outlet; a uniform flow chamber is formed between the electrode flow plate and the body of the electrode plate, and the process gas enters the flow chamber from the air outlet and is transported to the base region through the flow hole Above.

The upper electrode plate further includes an adjusting member disposed between the electrode plate main body and the electrode shimming plate for adjusting a distance between the electrode plate main body and the electrode shimming plate; the electrode plate The main body, the adjusting member and the electrode shimming plate constitute the shimming chamber.

Wherein, the processing chamber further comprises an inverting mechanism connected to the upper electrode plate and moving the position of the upper electrode plate between the pre-cleaning process position and the degassing process position by a flipping action.

Wherein, the processing chamber further includes a translating mechanism coupled to the upper electrode plate and moving the position of the upper electrode plate between the pre-cleaning process position and the degassing process position by a translational action.

The processing chamber further includes a connecting shaft and a rotating mechanism; one end of the connecting shaft is fixedly connected to the upper electrode plate, and the other end is connected to the rotating mechanism, and the rotating mechanism drives the connecting shaft to drive the upper electrode plate to rotate; A first intake passage is disposed in the connecting shaft, and the process gas is delivered to the upper electrode plate through the first intake passage.

Wherein, the rotating mechanism comprises a swinging cylinder, a coupling and a rotating shaft, wherein the swinging cylinder is connected to one end of the rotating shaft through the coupling, and the other end of the rotating shaft is connected to the connecting shaft, and the swinging cylinder is driven The rotating shaft drives the connecting shaft to rotate; the rotating shaft is provided with a second intake passage, and the second intake passage is in communication with the first intake passage.

Wherein, the chamber further includes an intake pipe disposed outside the rotating mechanism and communicating with the second intake passage; the process gas is input from the intake pipe through the second intake passage The first intake passage.

Wherein the connecting shaft is located in the cavity and passes through the bottom wall of the cavity, the rotating mechanism is located outside the bottom wall of the cavity; and a horizontal adjustment mechanism is further disposed between the bottom wall and the rotating mechanism, A leveling mechanism is used to adjust the level of the upper electrode plate.

Wherein, the horizontal adjustment mechanism comprises a plurality of adjusting rods and a connecting plate, wherein the connecting plate is disposed between the bottom wall and the rotating mechanism, and is connected with the rotating mechanism; the connecting shaft passes through the connecting plate, the connecting plate Having a certain distance from the bottom wall; one end of the adjusting rod is fixedly connected to the bottom wall, the other end passes through the connecting plate, and the length of the adjusting rod is adjustable through the connecting plate; the adjusting rod is adjusted to pass through the connecting plate The length of the connecting plate is adjusted, and the adjusting plate drives the rotating mechanism to adjust the verticality of the connecting shaft, thereby adjusting the level of the electrode plate.

The horizontal adjustment mechanism further includes a telescopic tube; the telescopic tube is sleeved outside the connecting shaft, and the first end thereof is sealingly connected to the bottom wall, and the second end is sealingly connected to the connecting plate.

Wherein the cavity includes a first sub-cavity and a second sub-cavity, wherein the first sub-cavity is disposed on a sidewall of the second sub-cavity and is in communication with the second sub-cavity; The pedestal is disposed in the second sub-cavity; the position of the upper electrode plate is switchable between the first sub-cavity and the second sub-cavity; when the upper electrode plate moves to the second sub-cavity In the middle, the upper electrode plate is in the pre-cleaning process position; when the electrode plate moves into the first sub-cavity, the upper electrode plate is in the degassing process position.

In another aspect, the present invention also provides a semiconductor processing apparatus comprising the process chamber of any of the above aspects of the present invention. Beneficial effects:

The processing chamber of the present invention can change the position of the upper electrode plate between the pre-cleaning process position and the degassing process position, and when the upper electrode plate is in the degassing process position, the upper electrode plate is offset from the pedestal region. Therefore, the heat source is directly opposite to the pedestal region, and the workpiece to be processed is subjected to a degassing process; when the upper electrode plate is in the pre-cleaning process position, the upper electrode plate is located between the heat source and the pedestal, that is, the upper electrode plate and the pedestal region Directly, the process gas is delivered directly above the susceptor by means of an upper electrode plate with a gas channel, since the process gas does not enter the chamber from the lower region of the chamber, it is not trapped under the chamber The pump is directly pumped away, so there is no need to replenish a large amount of process gas to maintain the excited state of the plasma, thereby improving the utilization rate of the process gas and reducing the consumption and waste of the process gas. In addition, the path length of the process gas outputted through the gas passage of the upper electrode plate to the workpiece to be processed is substantially the same, so that the plasma energy generated by the process gas excitation is substantially uniform, and the plasma in the upper region of the workpiece to be processed is stable. Thereby improving the effect of pre-cleaning.

The semiconductor processing apparatus of the present invention comprises the processing chamber provided by the present invention, wherein the position of the upper electrode plate can be changed between the pre-cleaning process position and the degassing process position according to the process requirements, that is, the upper electrode plate is gone. In the gas process position, the upper electrode plate is deviated from the pedestal region to perform a degassing process on the workpiece to be processed; when the upper electrode plate is in the pre-cleaning process position, the upper electrode plate is directly opposite to the pedestal region, with the gas passage The upper electrode plate directly transports the process gas to the top of the susceptor for the pre-cleaning process. Since the process gas does not enter the chamber from the lower region of the chamber during the pre-cleaning process, it is not directly pumped away by the vacuum pump located below the chamber, so there is no need to replenish a large amount of process gas to maintain the excitation of the plasma. Therefore, the semiconductor processing apparatus of the present invention can improve the utilization rate of the process gas and reduce the consumption and waste of the process gas. In addition, the path length of the process gas outputted through the gas passage of the upper electrode plate to the workpiece to be processed is substantially the same. Therefore, by using the semiconductor processing apparatus of the present invention, the plasma energy generated by the process gas excitation is substantially uniform, and is to be processed. The plasma in the upper region of the workpiece is stabilized, thereby improving the effect of pre-cleaning.

Various exemplary embodiments of the present invention will now be described in detail with reference to the drawings. It should be noted that the relative arrangement of the components and steps, the numerical formulas and numerical values set forth in the embodiments are not intended to limit the scope of the invention unless otherwise specified.

The following description of the at least one exemplary embodiment is merely illustrative and is in no way

Techniques, methods and apparatus known to those of ordinary skill in the relevant art may not be discussed in detail, but where appropriate, the techniques, methods and apparatus should be considered as part of the specification.

In all of the examples shown and discussed herein, any specific values are to be construed as illustrative only and not as a limitation. Thus, other examples of the exemplary embodiments may have different values.

It should be noted that similar reference numerals and letters indicate similar items in the following figures, and therefore, once an item is defined in one figure, it is not required to be further discussed in the subsequent figures.

The invention provides a process chamber for degassing and pre-cleaning a workpiece to be processed, the chamber comprising: a cavity, an upper electrode plate, a heat source disposed at the top of the cavity, and a base disposed at the bottom of the cavity. The base is configured to carry a workpiece to be processed; wherein the heat source is disposed opposite to the base region. The upper electrode plate is provided with a gas transmission passage and the position of the upper electrode plate can be moved between the pre-cleaning process position and the degassing process position according to the process requirement; wherein, in the case where the upper electrode plate is in the pre-cleaning process position, The electrode plate is located between the heat source and the base, that is, the upper electrode plate is directly opposite to the base region to perform a pre-cleaning process on the workpiece to be processed by the process gas from the gas passage; when the upper electrode plate is in the degassing process position Next, the upper electrode plate is offset from the pedestal region, and the heat source is directly opposite to the pedestal region, and the workpiece to be processed is subjected to a degassing process.

A specific embodiment in which the position of the upper electrode plate is moved between the pre-cleaning process position and the degassing process position by the rotation mode will be described in detail below with reference to FIGS. 2 to 7.

As shown in FIGS. 2 to 7, the process chamber includes a cavity 1, a susceptor 2 disposed on a lower portion of the cavity 1, an upper electrode plate 3, and a heat source 13. Generally, the heat source 13 is disposed in the top region of the cavity 1, the pedestal 2 is disposed in the bottom region of the cavity 1, and the pedestal 2 is a radio frequency pedestal, that is, the pedestal 2 is electrically connected to the radio frequency power source. The lower electrode plate, or the pedestal 2 is directly connected to the RF power source. The upper electrode plate 3 is also connected to the power source. When the upper electrode plate 3 is rotated above the susceptor 2, the process gas is transported to the upper side of the susceptor 2 through the gas passage, and the process gas is at the susceptor 2 and the upper electrode plate 3. The voltage formed between them is excited as a plasma, whereby the workpiece 8 to be treated can be pre-cleaned. Specifically, a gas passage for conveying a process gas is disposed in the upper electrode plate 3. The process gas is directly delivered to the upper side of the susceptor 2 via the gas passage, and is excited as a plasma between the susceptor 2 and the upper electrode plate 3, so that the workpiece 8 to be processed is pre-cleaned.

The arrow in Fig. 2 is an illustration of the flow path of the process gas, specifically, the process gas in the gas passage of the upper electrode plate 3 is conveyed above the susceptor 2 in the direction of the arrow. Under the action of the voltage formed between the susceptor 2 and the upper electrode plate 3, the process gas is excited as a plasma between the susceptor 2 and the upper electrode plate 3, and the bombardment effect of the surface of the workpiece 8 to be treated by the plasma is realized. Pre-cleaning of the workpiece 8 to be treated.

The process chamber of the present invention directly transports the process gas to the upper portion of the susceptor 2 through the gas passage in the upper electrode plate 3. Since the process gas does not enter the chamber from the lower region of the chamber, it is not located in the chamber. The vacuum pump below is directly pumped away, so that it does not need to add a large amount of process gas to maintain the excitation state of the plasma, thereby improving the utilization rate of the process gas and reducing the consumption and waste of the process gas. In addition, the length of the path of the process gas outputted from the gas passage of the upper electrode plate 3 to the workpiece 8 to be processed is substantially the same, so that the plasma energy generated by the process gas excitation is substantially uniform, and thus the upper portion of the workpiece 8 to be processed The plasma is stable, thereby improving the effect of pre-cleaning.

According to an embodiment of the process chamber of the present invention, the upper electrode plate comprises an electrode plate body; the electrode plate body is provided with an air inlet, an air flow channel and an air outlet; the process gas is input from the air inlet, and flows through the air flow channel, The air outlet is delivered to the top of the base.

In the above embodiment, the air inlet, the air flow channel and the air outlet provided on the upper electrode plate constitute a gas transmission passage, and the air outlet is disposed on a side of the electrode plate body facing the base to directly transport the process gas to the upper electrode plate. The space opposite the pedestal.

According to an embodiment of the process chamber of the present invention, the upper electrode plate body is disc-shaped; the air inlet is disposed on the sidewall of the electrode plate body along the thickness direction; and the air outlet is disposed on the surface of the electrode plate body opposite to the base The air flow passage is disposed inside the electrode plate body, and the air flow passage communicates with the air inlet and the air outlet.

Specifically, referring to FIGS. 2 and 3, the upper electrode plate 3 includes an electrode plate main body 31, and the shape of the electrode plate main body 31 is preferably a disk shape having a certain thickness, and a rectangular disk shape or an elliptical shape may also be selected. Or other shapes that can be used. The electrode plate main body 31 is provided with an air inlet 311, an air flow passage 312, and an air outlet 313. In a specific implementation, the air source may be directly connected to the air inlet 311 to input the process gas into the air flow channel 312 of the upper electrode plate 3, and then from the air outlet 313 to the upper side of the base 2. Thus, the air inlet 311 is disposed on the side wall of the upper electrode plate 3, and the air outlet 313 is disposed on the surface of the upper electrode plate 3 opposite to the base 2, thereby achieving upper air intake, thereby solving the prior art due to The heating bulb is disposed on the top wall of the cavity, which blocks the problem that the air inlet is provided on the top wall, so that the upper air intake cannot be achieved.

The number and position of the air inlet 311 and the air outlet 313 can be flexibly selected according to actual needs. For example, the intake port 311 and the air outlet 313 are respectively disposed at both ends of the longitudinal direction of the electrode plate main body 31 (that is, the radial direction of the disk); for example, the intake port 311 is located at the thickness direction of the electrode plate main body 31. On the wall, the air outlet 313 is located on the wall in the longitudinal direction of the electrode plate main body 31.

The process gas is input from the air inlet 311, flows through the air flow path 312, and is sent from the air outlet 313 to the upper side of the susceptor 2. The air flow passage 312 may be a passage of a tubular structure between the air inlet 311 and the air outlet 313; or, the air flow passage 312 may be a passage of a cavity structure in the electrode plate main body 31, due to the air flow passage 312 of the cavity structure The structure is a cavity-like structure, so that the process gas sent from the air inlet 311 can be sufficiently diffused therein, thereby facilitating the improvement of the uniformity and stability of the output process gas.

The shape, number, and setting position of the air outlet 313 can be flexibly set. For example, the air outlet 313 is circular or rectangular; for example, the number of the air outlets 313 is one or two or more; and for example, when the electrode plate main body 31 has a disk-shaped structure, the air outlet 313 is located in the disk At the center position of the lower surface, in particular, when the electrode plate main body 31 has a disk-shaped structure, the air flow passage 312 extends in the radial direction of the disk.

The upper electrode plate 3 shown in Fig. 3 is taken as an example. In this embodiment, the cross-sectional shape of the electrode plate main body 31 in the axial direction thereof is a rectangle. In this cross-sectional view, the air inlet 311 is located on the wide side of the rectangle, and the air outlet 313 is located at the center point of the long side of the rectangle. The air flow passage 312 extends from one wide side of the rectangle to the other wide side.

When the number of the air outlets 313 is set to one, the air outlets 313 are located at the center of the electrode plate main body 31. This arrangement is advantageous for the uniform diffusion of the process gas in the gas flow passage 312 and for the uniform and stable delivery of the process gas flowing out of the gas outlet 313 toward the susceptor 2.

According to another embodiment of the process chamber of the present invention, the upper electrode plate further includes an electrode flow plate, and the electrode flow plate is provided with a flow hole; the electrode flow plate is disposed below the electrode plate body; the electrode plate and the electrode plate A turbulent cavity is formed between the main body of the electrode plate, and the process gas enters the grading cavity from the gas outlet port, and is transported to the upper side of the susceptor through the merging hole through the merging cavity.

Referring specifically to Figures 2 and 3, the upper electrode plate 3 further includes an electrode flow plate 32, and the shape of the electrode flow plate 32 can be set according to actual needs. For example, the electrode flow plate 32 is a circular plate or a rectangular plate or the like.

The electrode flow plate 32 is disposed below the electrode plate main body 31. Here, the "lower side of the electrode plate main body 31" means a region between the electrode plate main body 31 and the susceptor 2. The orthographic projection of the electrode shimming plate 32 on the electrode plate main body 31 must cover the air outlet 313 of the electrode plate main body 31. Preferably, the air outlet 313, the electrode shimming plate 32, and the workpiece 8 to be processed on the susceptor 2 are concentric. Settings. Generally, the shape of the electrode shimming plate 32 can match the shape of the electrode plate main body 31. For example, when the electrode plate main body 31 has a disk shape, the electrode smoothing plate 32 is a circular plate.

The electrode flow plate 32 is connected to the electrode plate main body 31. The connection between the electrode shimming plate 32 and the electrode plate main body 31 can be achieved by welding or bolting or the like. It should be noted that when the electrode plate main body 31 and the electrode shimming plate 32 are bolted together, in order to ensure that the process gas in the air flow path 312 can be transported toward the susceptor 2 via the merging hole 321 of the electrode shimming plate 32. A seal such as a seal ring may be provided at the junction of the electrode plate main body 31 and the electrode shimming plate 32 to ensure the airtightness of the shimming chamber 33.

A flow chamber 33 is formed between the electrode flow plate 32 and the electrode plate body 31. The process gas enters the flow chamber 33 from the air outlet 313 and is transported to the top of the base 2 through the flow chamber 33 to improve the transport to the base. The uniformity of the process gas above the seat 2.

The merging chamber 33 is formed by the electrode plate main body 31 and the electrode shimming plate 32. In a specific implementation, protrusions may be provided on the electrode plate main body 31 and/or the electrode shimming plate 32 such that there is a certain space between the electrode plate main body 31 and the electrode shimming plate 32, so that the electrode plate main body 31 and the electrode are provided. A flow chamber 33 of a cavity structure is formed between the flow plates 32. Alternatively, a support member may be provided between the electrode plate main body 31 and the electrode flow regulating plate 32, which separates the electrode plate main body 31 and the electrode flow regulating plate 32, thereby merging the electrode plate main body 31 and the electrode A stratified cavity 33 of a cavity structure is formed between the plates 32.

The air outlet 313 is in communication with the merging chamber 33. The electrode convection plate 32 is provided with a merging hole 321 which can transport the process gas from the merging chamber 33 to the upper side of the susceptor 2.

In use, the process gas enters the air flow passage 312 of the electrode plate main body 31 from the air inlet 311, and then enters the merging chamber 33 from the air outlet 313, and then flows out from the merging hole 321 of the electrode shimming plate 32, thereby conveying the process gas. Up to the top of the base 2.

The shape and number of the flow holes 321 can be set according to actual needs. For example, the flow holes 321 are circular holes or rectangular holes. For another example, the number of the flow holes 321 is plural, and the plurality of flow holes 321 are evenly distributed on the electrode flow plate 32. A plurality of flow holes 321 are disposed on the electrode flow plate 32, and the plurality of flow holes 321 are advantageous for improving the uniformity and stability of the gas supply of the upper electrode plate 3. The above-mentioned "uniform distribution" may, for example, uniformly arrange the plurality of flow holes 321 in an array; or, the plurality of flow holes 321 may be arranged to form a plurality of circle shapes, each of which includes a plurality of flow holes 321 uniformly distributed in the circumferential direction. The plural circles form a concentric circle and the radial spacing is equal. Preferably, the plurality of circles constitute a concentric circle centered on the center of the susceptor 2, so that the process gas above the susceptor 2 is more evenly distributed.

Further, the plurality of flow holes 321 are uniformly distributed on the electrode flow plate 32, and may also be in such a form that the plurality of flow holes 321 are radially arranged around the geometric center of the electrode flow plate 32. Further, the orifice of the flow-through hole 321 is preferably 0.5 mm to 1 mm.

According to another embodiment of the process chamber of the present invention, the upper electrode plate further includes an adjusting member disposed between the electrode plate main body and the electrode shimming plate for adjusting the distance between the electrode plate main body and the electrode shimming plate. The electrode plate body, the adjusting member and the electrode flow plate constitute a merging chamber.

Specifically, as shown in FIGS. 3 and 5, the upper electrode plate 3 further includes an adjusting member 34 for adjusting the distance between the electrode plate main body 31 and the electrode smoothing plate 32 to adjust the electrode flow. The distance between the plate 32 and the base 2 and the space within the doubling chamber 33 are adjusted.

The adjusting member 34 is located between the electrode plate main body 31 and the electrode shimming plate 32, and the adjusting member 34 is connected to the electrode plate main body 31 and the electrode shimming plate 32. The connection between the electrode plate main body 31 and the regulating member 34 can be achieved by welding, riveting, snapping or screwing. The connection between the electrode shimming plate 32 and the adjustment member 34 can be achieved by welding, riveting, snapping or screwing.

It should be noted that, in order to increase the airtightness of the shimming chamber 33, for example, a seal ring may be provided at the junction of the electrode plate main body 31 and the regulating member 34, and at the junction of the electrode shimming plate 32 and the adjusting member 4. Seals. The merging chamber 33 is composed of an electrode plate main body 31, an adjusting member 34, and an electrode shimming plate 32. The shape of the adjusting member 34 is preferably an annular structure, that is, the adjusting member 34 is an adjusting ring, and the inner peripheral wall of the adjusting ring is an inner peripheral wall of the merging chamber 33.

Preferably, the connection between the electrode plate main body 31 and the regulating member 34 is detachable; the connection between the electrode shimming plate 32 and the regulating member 34 is detachably connected. The detachable connection can be achieved by snapping or screwing.

The volume or shape of the flow chamber 33 can be varied by replacing the adjustment members 34 of different thicknesses or shapes. Further, by replacing the adjusting members 34 of different thicknesses, the distance between the lower end surface of the upper electrode plate 3 and the susceptor 2 can be changed, thereby adjusting the effect of the pre-cleaning. Moreover, for different process requirements, the cost of the process chamber can be reduced by replacing the adjustment members 4 of different materials and/or different volumes.

According to an embodiment of the process chamber of the present invention, the process chamber further includes a connecting shaft and a rotating mechanism; one end of the connecting shaft is fixedly connected to the upper electrode plate, and the other end is connected to the rotating mechanism, and the rotating mechanism drives the connecting shaft to drive the upper electrode plate to rotate A first intake passage is disposed in the connecting shaft, and the process gas is delivered to the upper electrode plate through the first intake passage.

Specifically, as shown in FIG. 2, the process chamber further includes a connecting shaft 4 and a rotating mechanism 5, the first end of the connecting shaft 4 is connected to the upper electrode plate 3, and the second end of the connecting shaft 4 is connected to the rotating mechanism 5. . The upper electrode plate 3 can be connected to the connecting shaft 4 through a boss extending outward on the outer surface of the electrode plate main body 31. Alternatively, the upper electrode plate 3 may be coupled to the connecting shaft 4 through a groove on the electrode plate main body 31 that matches the end of the connecting shaft 4.

The connection between the upper electrode plate 3 and the connecting shaft 4 can be achieved by welding, riveting, snapping or screwing. It should be noted that when the upper electrode plate 3 and the connecting shaft 4 are snapped or screwed, in order to improve the airtightness of the directional cavity 33, for example, a seal may be provided at the junction of the upper electrode plate 3 and the connecting shaft 4. Ring seal. In practical applications, in order to more easily connect the upper electrode plate 3 and the connecting shaft 4 together, a connecting member including a screw, a spring washer, and a flat washer can be used.

The rotating mechanism 5 is connected to the connecting shaft 4. The rotating mechanism 5 controls the rotation of the connecting shaft 4 to drive the upper electrode plate 3 to rotate above the base 2 or to rotate the upper electrode plate 3 to deviate from above the base 2. Generally, the rotating mechanism 5 includes a driving device that can drive the rotation of the connecting shaft 4. The above drive device can be, for example, a DDR (Direct Drive Rotary) motor.

Further, a first intake passage is disposed in the connecting shaft 4, and the process gas is sent to the upper electrode plate 3 via the first intake passage 41, so that the air inlet 311 for supplying the gas to the upper electrode plate 3 can be disposed on the connecting shaft 4. In this way, the air inlet is taken out to facilitate the intake.

Specifically, according to an embodiment of the present invention, the rotating mechanism 5 includes a swing cylinder 51, a coupling 52, and a rotating shaft 53. The first end of the rotating shaft 53 is coupled to the connecting shaft 4. The coupling 52 connects the second end of the rotating shaft 53 and the swing cylinder 51 together. The connection between the coupling 52 and the oscillating cylinder 51 and the rotating shaft 53 can be achieved by means well known in the art, which is not further defined by the present invention. The rotating shaft 53 is connected to the connecting shaft 4. The rotating shaft 53 and the connecting shaft 4 may be coupled together by welding or integral molding.

The swing cylinder 51 drives the rotation shaft 53 to rotate, so that the rotation shaft 53 drives the rotation of the connection shaft 4. The swinging cylinder 51 drives the rotating shaft 53 to reciprocate in a certain angular range by the coupling 52. The rotating shaft 53 drives the upper electrode plate 3 connected to the connecting shaft 4 to rotate, thereby rotating the upper electrode plate 3 to the base 2. Above, or driving the upper electrode plate 3 to rotate away from the base 2, and selecting the rotation angle of the swing cylinder 51, the rotation angle of the upper electrode plate 3 can be controlled.

Specifically, as shown in FIGS. 5 and 6, the first intake passage 41 is provided in the connecting shaft 4, and the process gas is sent to the upper electrode plate 3 via the first intake passage 41. Optionally, the first intake passage 41 is in communication with the intake port 311. The connecting shaft 4 functions to connect the gas source to the upper electrode plate 3. Further, the connecting shaft 5 can also function to support the upper electrode plate 3.

In a specific implementation, the process gas enters the air flow channel 312 of the electrode plate main body 31 from the air inlet 311 through the first air inlet passage 41, and then enters the merging chamber 33 from the air outlet port 313, and then the merging hole from the electrode convection plate 32. The 321 flows out of the upper electrode plate 3 to realize the air supply function to the process chamber.

A second intake passage 531 is provided in the rotating shaft 53, and the second intake passage 531 is in communication with the first intake passage 41.

Further, the process chamber of the present invention further includes an intake pipe 6 that communicates with the second intake passage 531. Alternatively, the intake pipe 6 may be coupled to the rotating shaft 53 to input process gas into the second intake passage 531. The process gas is input from the intake pipe 6 to the second intake passage 531, and enters the upper electrode plate 3 via the first intake passage 41. Preferably, the length of the intake pipe 6 is such that it is ensured that the intake pipe 6 has a sufficient length to extend between the rotary shaft 53 and the air source when the rotary shaft 53 is rotated. For example, the intake pipe 6 may be a metal bellows such that when the rotary shaft 53 rotates, the metal bellows intake pipe 6 can be moved or telescopically deformed following the rotation of the rotary shaft 53, thereby ensuring that it can have a sufficient length. It extends between the rotating shaft 53 and the air source, and can be firmly connected with the rotating shaft 53 and the air source without being torn off with the rotating shaft 53 and the air source as the rotating shaft 53 rotates due to the length. Connection.

Further, according to an embodiment of the process chamber of the present invention, the connecting shaft is located in the cavity and passes through the bottom wall of the cavity, and the rotating mechanism is located outside the bottom wall of the cavity; and between the bottom wall and the rotating mechanism is further disposed The level adjusting mechanism and the level adjusting mechanism are used to adjust the level of the upper electrode plate.

In the present invention, a level adjusting mechanism is provided to adjust the level of the upper electrode plate so that the path length of the gas entering the susceptor is more uniform, thereby making the ionized plasma more uniform.

Further, the horizontal adjustment mechanism preferably includes a plurality of adjusting rods and a connecting plate, wherein the connecting plate is disposed between the bottom wall and the rotating mechanism and is connected with the rotating mechanism; the connecting shaft passes through the connecting plate, and the connecting plate and the bottom wall have a certain Spacing; one end of the adjusting rod is fixedly connected with the bottom wall, the other end passes through the connecting plate, and the length of the adjusting rod is adjustable through the connecting plate; the level of the connecting plate is adjusted by adjusting the length of the adjusting rod through the connecting plate, the adjusting plate The rotating mechanism is adjusted to adjust the verticality of the connecting shaft, thereby adjusting the level of the upper electrode plate. The horizontal adjustment mechanism further preferably includes a telescopic tube; the telescopic tube is sleeved outside the connecting shaft, and the first end is sealingly connected with the bottom wall, and the second end is sealingly connected with the connecting plate.

Specifically, as shown in Fig. 7, the level adjusting mechanism 7 of the present invention includes a plurality of adjusting levers 71 and a connecting plate 72. The connecting plate 72 is disposed below the bottom wall of the cavity 1 and has a certain distance from the bottom wall. The connecting plate 72 is provided with a connecting shaft through hole, and the connecting shaft 4 penetrates the connecting plate 72 via the connecting shaft through hole, and the connecting shaft 4 can rotate in the connecting shaft through hole. It should be noted that in order to improve the airtightness of the process chamber, a seal such as a seal ring may be disposed between the connecting shaft 4 and the connecting plate 72.

The rotating mechanism 5 is mounted on the side of the connecting plate 72 facing away from the bottom wall and is connected to the connecting plate 72. One end of the adjustment rod 71 is connected to the bottom wall of the cavity 1, and the other end extends through the connection plate 72 to below the connection plate 72. One end of the adjusting rod 71 is connected to the bottom wall of the cavity 1 and may include the following manner: First, the adjusting rod 71 is fixedly connected to the bottom wall of the cavity 1 by welding; and secondly, the outer peripheral surface of the adjusting rod 71 is disposed outside. Threading, an internal thread is arranged on the bottom wall of the cavity 1, and the adjusting rod 71 is movably connected to the bottom wall of the cavity 1 by screwing; and the third end of the adjusting rod 71 is directly abutted against the cavity 1 On the bottom wall, the connection of the adjustment rod 71 to the bottom wall of the chamber 1 is achieved. The connecting plate 72 is arranged to be adjustable in position on the adjusting lever 71, that is, the length of the adjusting lever 71 passing through the connecting plate 72 is adjustable, in other words, the adjusting lever 71 is between the bottom wall of the cavity 1 and the connecting plate 72. The length is adjustable. When the connection between the adjusting rod 71 and the bottom wall of the cavity 1 is in the above manner, the movable connection between the adjusting rod 71 and the connecting plate 72 can be realized by the cooperation of the protrusion and the groove; when the adjusting rod 71 and the cavity are When the connection between the bottom walls of 1 is in the above manner two and three, the movable connection between the adjusting rod 71 and the connecting plate 72 can be realized by the cooperation of the projections and the grooves or by the screw connection.

The connecting plate 72 is disposed to be adjustable in position on the adjusting lever 71, thereby realizing the adjustment of the level of the connecting plate 72, thereby adjusting the verticality of the rotating mechanism 5 connected to the connecting plate 72, thereby The perpendicularity of the connecting shaft 4 to which the rotating mechanism 5 is connected is adjusted, so that the adjustment of the level of the upper electrode plate 3 connected to the connecting shaft 4 can be achieved.

The horizontal adjustment mechanism 7 preferably further includes a telescopic tube 73. The telescopic tube 73 is sleeved outside the connecting shaft 4. The two ends of the telescopic tube 73 are respectively sealedly connected with the bottom wall of the cavity 1 and the connecting plate 72 to ensure the cavity 1 Vacuum demand. The telescopic tube 73 has elasticity, is a flexible tube or a bellows, and can be deformed and deformed within a certain range, so that the adjustment of the level of the connecting plate 72 and the electrode plate 3 and the adjustment of the verticality of the rotating mechanism 5 and the connecting shaft 4 are not performed. Generate restrictions.

Further, according to an embodiment of the present invention, the cavity includes a first sub-cavity and a second sub-cavity, wherein the first sub-cavity is disposed on the sidewall of the second sub-cavity and the second sub-cavity Connected; wherein the base is disposed in the second sub-cavity; the upper electrode plate is movable between the first sub-cavity and the second sub-cavity; and when the upper electrode plate moves into the second sub-cavity, the upper electrode The plate is opposite to the base, and the pre-cleaning process is performed on the workpiece to be processed; when the upper electrode plate is moved into the first sub-cavity, the upper electrode plate is separated from the upper portion of the base to perform a degassing process on the workpiece to be processed.

Specifically, as shown in FIG. 2, the cavity 1 includes a first sub-cavity 11 and a second sub-cavity 12, the first sub-cavity 11 and the second sub-cavity 12 are in communication, and the first sub-cavity 11 Disposed on the side wall of the second sub-cavity 12, the pedestal 2 is disposed in the second sub-cavity 12, and the upper electrode plate 3 can change position between the first sub-cavity 11 and the second sub-cavity 12, when When the upper electrode plate 3 is rotated into the second sub-cavity 12, the upper electrode plate 3 is opposed to the susceptor 2, and a pre-cleaning process is performed. At this time, the workpiece to be processed, for example, a wafer on the upper electrode plate 3 and the susceptor 2 is processed. 8 relative.

When the upper electrode plate 3 is rotated into the first sub-cavity 11, the upper electrode plate 3 is separated from the susceptor 2, and the degassing process can be performed. At this time, the upper electrode plate 3 is deviated from the workpiece to be processed on the susceptor 2. 8. That is, the position of the upper electrode plate 3 and the workpiece 8 to be processed on the susceptor 2 are staggered so that the heat source 13 is opposed to the susceptor 2, thereby preventing the upper electrode plate 3 from blocking the heat source 13. In practical applications, the first sub-cavity 11 is preferably in the form of a garage, and the second sub-cavity 12 is provided with an opening 131 connected to the vacuum pump. When the degassing process is performed, the heat source 13 is turned on. Turn on the vacuum pump.

Hereinafter, the structure and operation principle of the upper electrode plate, the connecting shaft, and the rotating mechanism in the process chamber of the present invention will be described in detail by taking the specific embodiment shown in FIG. 5 as an example.

Further, in an embodiment of the present invention, the process chamber includes a cavity 1, a susceptor 2, an upper electrode plate 3, a connecting shaft 4, a rotating mechanism 5, an intake pipe 6, and a level adjusting mechanism 7. The cavity 1 includes a first sub-cavity 11 and a second sub-cavity 12, the first sub-cavity 11 and the second sub-cavity 12 are in communication, and the first sub-cavity 11 is disposed on the sidewall of the second sub-cavity 12. The susceptor 2 is disposed in the second sub-cavity 12, and the upper electrode plate 3 has a disc shape including an electrode plate main body 31, an electrode shimming plate 32, a shimming chamber 33 and an adjusting member 34, wherein the electrode The plate main body 31 is provided with an air inlet 311, an air flow passage 312, and an air outlet 313. The air inlet 311 is disposed on the wall of the electrode plate main body 31 in the thickness direction, the air outlet 313 is disposed on the surface of the electrode plate main body 31 opposite to the base 2, and the air outlet 313 is located at the center of the electrode plate main body 31, and the air outlet The number of 313 is one, and the electrode shimming plate 32 is provided with a plurality of merging holes 321 . The adjusting member 34 is located between the electrode plate main body 31 and the electrode shimming plate 32, and the adjusting member 34 is connected to the electrode plate main body 31 and the electrode shimming plate 32. The shimming chamber 33 is made up of the electrode plate main body 31, the regulating member 34 and the electrode. The flow plate 32 is constructed. The connecting shaft 4 is connected to the upper electrode plate 3. The connecting shaft 4 is provided with a first intake passage 41. The first intake passage 41 communicates with the intake port 311. The rotating mechanism 5 includes a swinging cylinder 51 and a coupling 52. And the rotating shaft 53, the coupling 52 connects the swing cylinder 51 and the rotating shaft 53, and the rotating shaft 53 is connected to the connecting shaft 4. A second intake passage 531 is disposed in the rotating shaft 53, and the second intake passage 531 is in communication with the first intake passage 41. The swing cylinder 51 drives the rotary shaft 53 to rotate, so that the rotary shaft 53 drives the connecting shaft 4 to rotate. The air pipe 6 is connected to the rotating shaft 53 and communicates with the second intake passage 531 to input process gas into the second intake passage 531. The process gas transmission path is as follows:

The process gas enters the second intake passage 531 from the intake pipe 6, and then enters the first intake passage 41 communicating with the second intake passage 531, and re-enters the upper electrode plate 3 via the first intake passage 41. In the upper electrode plate 3, the process gas enters the gas flow passage 312 of the electrode plate main body 31 from the gas inlet port 311, and then enters the flow regulating chamber 33 from the gas outlet port 313, and then flows out from the flow regulating hole 321 of the electrode flow regulating plate 32 to the upper electrode. The plate 3, whereby the process gas is delivered above the susceptor 2.

The swinging cylinder 51 drives the rotating shaft 53 to reciprocate in a certain angular range by the coupling 52, and the rotating shaft 53 drives the upper electrode plate 3 connected to the connecting shaft 4 to rotate.

When the upper electrode plate 3 is rotated into the second sub-cavity 12, the upper electrode plate 3 is opposed to the susceptor 2, and the process gas is transported to the pedestal from the gas passage formed by the air inlet 311, the air flow passage 312 and the air outlet 313. 2, is ionized into plasma, the plasma is treated with the workpiece 8 to be bombarded to achieve a pre-cleaning process; when the upper electrode plate 3 is rotated into the first sub-cavity 11, the upper electrode plate 3 is separated from the top of the base 2, The heat source 13 is turned on to heat the workpiece 8 to be processed, and the vacuum pump is opened to evacuate the cavity 1 to realize a degassing process of the workpiece 8 to be processed.

A specific embodiment in which the position of the upper electrode plate is moved between the pre-cleaning process position and the degassing process position by the flipping method will be described in detail below with reference to Figs. 8 and 9.

As shown in FIG. 8 and FIG. 9, the process chamber provided by the embodiment includes a cavity 1, a base 2, an upper electrode plate 3, a turning mechanism 10, and a heat source 13. The upper electrode plate 3 is movably connected to the turning mechanism 10, and can be turned over from the pre-cleaning process position to the degassing process position or from the degassing process position to the pre-cleaning process position by the turning mechanism 10, when the upper electrode When the plate 3 is in the pre-cleaning process position, the upper electrode plate 3 is located between the heat source 13 and the susceptor 2, that is, the upper electrode plate 3 is directly opposed to the pedestal region to process gas by means of the gas passage from the upper electrode plate 3. The workpiece 8 is subjected to a pre-cleaning process; when the upper electrode plate 3 is in the degassing process position, the upper electrode plate 3 is offset from the pedestal region, and the heat source 13 is directly opposed to the pedestal region, and the workpiece 8 to be processed is subjected to a degassing process.

In practical applications, the working principle of the turning mechanism 10 is similar to the flipping action principle of the flip phone. The structure of the upper electrode plate 3 itself, the gas supply mode of the upper electrode plate 3 to the susceptor 2, and the gas supply mode of the gas source to the upper electrode plate 3 can be employed in the embodiment in which the second to seventh embodiments are rotated. The structures and manners shown are not described here.

As shown in FIG. 10 and FIG. 11 , the processing chamber provided by the embodiment includes: a cavity 1 , a base 2 , an upper electrode plate 3 , a translation mechanism such as the slide rail 111 , and a heat source 13 , and in the cavity 1 The side wall is provided with a first sub-cavity 11 communicating therewith. The slide rail 111 extends from the inside of the cavity 1 to the first sub-cavity 11, and the upper electrode plate 3 can slide on the slide rail 111 for pre-cleaning process. The position is moved to the degassing process position or moved from the degassing process position to the pre-cleaning process position. When the upper electrode plate 3 is in the pre-cleaning process position, the upper electrode plate 3 is located between the heat source 13 and the susceptor 2, that is, the upper electrode The plate 3 is directly opposite to the pedestal region to perform a pre-cleaning process on the workpiece 8 to be processed by means of a process gas from the gas passage of the upper electrode plate 3; when the upper electrode plate 3 is in the degassing process position, the upper electrode plate 3 is deviated from In the pedestal area, the heat source 13 is directly opposite to the pedestal area, and the workpiece 8 to be processed is subjected to a degassing process.

In practical applications, the working principle of the slide rail 111 is similar to the slide motion principle of the slide phone. In practical applications, the position change of the upper electrode plate 3 can be, for example, a traction method or a combination of traction and spring. When the traction mode is adopted, for example, a fixed pulley may be disposed on each of the left and right sides of the upper electrode plate 3, and a traction rope (left traction rope) is connected to the left side of the upper electrode plate 3 and bypasses the fixed pulley on the left side along The support mechanism 112 extends to the outside of the cavity 1, and the other traction rope (right traction rope) is connected to the right side of the upper electrode plate 3 and extends around the fixed pulley on the right side and extends along the support mechanism 112 to the outside of the cavity 1. In practical applications, according to the process requirements, the left traction rope can be pulled to move the upper electrode plate 3 along the slide rail 111 to the left side to the pre-cleaning process position; the right traction rope is pulled to move the upper electrode plate 3 to the right side along the slide rail 111 to the right side. Degassing process position. When a combination of traction and spring is employed, for example, a fixed pulley may be disposed on the left side of the upper electrode plate 3, and a traction rope (left traction rope) is connected to the left side of the upper electrode plate 3 and bypasses the fixed pulley on the left side. The support mechanism 112 extends to the outside of the cavity 1, and a spring is disposed on the right side of the upper electrode plate 3. One end of the spring is fixed to the right end surface of the upper electrode plate 3, and the other end is fixed to the right side surface of the slide rail 111 or fixed to the first On the side wall of a sub-cavity 11, and when the spring is at a free length, it can make the upper electrode plate 3 in the degassing process position, and by pulling the traction rope, the upper electrode plate 3 can be driven to stretch the spring and the upper electrode plate 3 is in the pre-cleaning process position.

The structure of the upper electrode plate 3 itself, the gas supply mode of the upper electrode plate 3 to the susceptor 2, and the gas supply mode of the gas source to the upper electrode plate 3 can be employed in the embodiment in which the second to seventh embodiments are rotated. The structures and manners shown are not described here. It is of course understood that the support mechanism 112 can be used to support the slide rail 111 and the upper electrode plate 3, and can also serve as a channel carrier for the gas supply of the gas plate to the upper electrode plate 3.

It should be noted that, in practical applications, the cavity 1 may be set large enough not to be provided with the first sub-cavity 11 so as to be able to accommodate the pre-cleaning position and the degassing process position of the upper electrode plate 3.

In another aspect, the present invention also provides a semiconductor processing apparatus comprising the processing chamber provided by any of the above embodiments of the present invention.

The semiconductor processing apparatus provided by the present invention comprises the processing chamber provided by the foregoing embodiment of the present invention, wherein the position of the upper electrode plate 3 can be changed between the pre-cleaning process position and the degassing process position according to the process requirements, that is, When the upper electrode plate 3 is in the degassing process position, the upper electrode plate 3 is deviated from the area of the susceptor 2 to perform a degassing process for the workpiece to be processed; and when the upper electrode plate 3 is in the pre-cleaning process position, the upper electrode plate 3 and the base are The area of the seat 2 is directly opposite, and the process gas is directly delivered to the upper side of the susceptor 2 by means of the upper electrode plate 3 with the gas passage for the pre-cleaning process. Since the process gas does not enter the chamber from the lower region of the chamber during the pre-cleaning process, it is not directly pumped away by the vacuum pump located below the chamber, so there is no need to replenish a large amount of process gas to maintain the excitation of the plasma. Therefore, the semiconductor processing apparatus provided by the present invention can improve the utilization rate of the process gas and reduce the consumption and waste of the process gas. In addition, the path length of the process gas outputted through the gas passage of the upper electrode plate 3 to the workpiece to be processed is substantially the same. Therefore, by using the semiconductor processing apparatus of the present invention, the plasma energy generated by the process gas excitation is substantially uniform, and is waiting The plasma in the upper region of the treated workpiece 8 is stabilized, so that the effect of pre-cleaning can be improved.

While the invention has been described in detail with reference to the preferred embodiments of the present invention, it is understood that It will be appreciated by those skilled in the art that the above embodiments may be modified without departing from the scope and spirit of the invention. The scope of the invention is defined by the scope of the appended claims.

1, 1'‧‧‧ cavity

2, 3'‧‧‧ base

2'‧‧‧Garage

3‧‧‧Upper electrode plate

4‧‧‧Connected shaft

4'‧‧‧electrode plate

5, 6'‧‧‧ rotating mechanism

6‧‧‧Intake pipe

7‧‧‧Level adjustment mechanism

7', 8‧‧‧ workpieces to be processed

10‧‧‧ flip mechanism

11‧‧‧First sub-cavity

11', 311‧‧ ‧ air inlet

12‧‧‧Second sub-cavity

12', 313‧‧ vents

13‧‧‧heat source

13'‧‧‧heating bulb

31‧‧‧electrode plate body

32‧‧‧electrode uniformity plate

33‧‧‧well chamber

34‧‧‧Adjustment

41‧‧‧First intake passage

51‧‧‧Swing cylinder

52‧‧‧Coupling

53‧‧‧Rotary axis

71‧‧‧Adjustment rod

72‧‧‧Connecting plate

73‧‧‧ telescopic tube

111‧‧‧Slide rails

112‧‧‧Support institutions

131‧‧‧ openings

312‧‧‧Air passage

321‧‧‧Harmonic orifice

531‧‧‧Second intake passage

1 is a schematic view of a cross section of a conventional process chamber; FIG. 2 is a cross-sectional view of a process chamber according to an embodiment of the present invention; and FIG. 3 is a cross-sectional view of an upper electrode plate according to an embodiment of the present invention; A perspective view of an upper electrode plate, a connecting shaft, a rotating mechanism, and an intake pipe connection of a process chamber according to an embodiment of the present invention; FIG. 5 is a view showing an upper electrode plate and a connection in a process chamber according to an embodiment of the present invention; FIG. 6 is a cross-sectional view showing an upper electrode plate in an embodiment of the present invention; and FIG. 7 is a cross-sectional view showing a horizontal adjusting mechanism in an embodiment of the present invention; Fig. 8 is a view showing a state in which the upper electrode plate of the flipping mode is in the pre-cleaning process position; Fig. 9 is a view showing a state in which the upper electrode plate of the flipping mode is in the degassing process position; A state diagram when the upper electrode plate of the translational mode is in the pre-cleaning process position; and FIG. 11 is a state diagram when the upper electrode plate of the translational mode is in the degassing process position.

Claims (15)

A process chamber for degassing and pre-cleaning a workpiece to be processed, the chamber comprising: a cavity, an upper electrode plate, a heat source disposed at a top of the cavity, and a chamber a base of the bottom of the cavity, the base is configured to carry the workpiece to be processed; wherein the heat source is disposed opposite to the base region; wherein the upper electrode plate is provided with a gas passage and the upper electrode plate The position is movable between a pre-cleaning process position and a degassing process position; wherein the upper electrode plate is located between the heat source and the base in the case where the upper electrode plate is in the pre-cleaning process position, the upper electrode The plate is directly opposite to the pedestal region to pre-clean the workpiece to be processed by means of a process gas from the gas passage; in the case where the upper electrode plate is in the degassing process position, the upper electrode plate is offset from In the pedestal area, the heat source is directly opposite to the pedestal area to perform a degassing process on the workpiece to be processed. The process chamber of claim 1, wherein the upper electrode plate comprises an electrode plate body; the electrode plate body is provided with an air inlet, an air flow channel and an air outlet, and the air flow The passage communicates with the air inlet and the air outlet; the process gas enters the air flow passage from the air inlet, and flows out of the air outlet body from the air outlet. The process chamber according to claim 2, wherein the electrode plate body has a disc shape; the air flow channel is disposed inside the electrode plate body; and the air inlet is disposed on the electrode plate body The side wall in the thickness direction; the air outlet is disposed on a surface of the electrode plate body opposite to the base. The process chamber of claim 2, wherein the upper electrode plate further comprises an electrode flow plate, and the electrode flow plate is provided with a flow hole; the electrode flow plate is disposed on the electrode plate Below the electrode plate body, an orthographic projection on the lower surface of the electrode plate body covers the gas outlet; a uniform flow chamber is formed between the electrode flow plate and the electrode plate body, and the process gas enters from the gas outlet The ration chamber is delivered to the top of the susceptor region via the shimming hole. The process chamber of claim 4, wherein the upper electrode plate further comprises an adjusting member disposed between the electrode plate body and the electrode flow plate for adjusting the a distance between the electrode plate main body and the electrode shimming plate; the electrode plate main body, the adjusting member and the electrode shimming plate constitute the shimming chamber. The process chamber according to any one of the preceding claims, wherein the process chamber further includes an inverting mechanism coupled to the upper electrode plate and caused by a flipping action The position of the upper electrode plate moves between a pre-cleaning process position and a degassing process position. The process chamber of any one of clauses 1 to 5, wherein the process chamber further includes a translation mechanism coupled to the upper electrode plate and caused by a translational action The position of the upper electrode plate moves between a pre-cleaning process position and a degassing process position. The process chamber according to any one of claims 1 to 5, wherein the process chamber further comprises a connecting shaft and a rotating mechanism; one end of the connecting shaft and the upper electrode plate a fixed connection, the other end is connected to the rotating mechanism, the rotating mechanism drives the connecting shaft to drive the upper electrode plate to rotate; the connecting shaft is provided with a first intake passage, and the process gas is delivered to the first intake passage Upper electrode plate. The process chamber of claim 8, wherein the rotating mechanism comprises a swinging cylinder, a coupling and a rotating shaft, wherein the swinging cylinder passes through the coupling and one end of the rotating shaft Connecting, the other end of the rotating shaft is connected to the connecting shaft, the swinging cylinder drives the rotating shaft to drive the connecting shaft to rotate; the rotating shaft is provided with a second intake passage, the second intake passage and the first inlet The gas passage is connected. The process chamber of claim 9, wherein the chamber further comprises an intake pipe disposed outside the rotating mechanism and communicating with the second intake passage; The process gas is input to the first intake passage from the intake pipe through the second intake passage. The process chamber of claim 8, wherein the connecting shaft is located in the cavity and passes through a bottom wall of the cavity, and the rotating mechanism is located outside the bottom wall of the cavity; A horizontal adjustment mechanism is also disposed between the bottom wall and the rotating mechanism for adjusting the level of the upper electrode plate. The process chamber of claim 11, wherein the horizontal adjustment mechanism comprises a plurality of adjustment rods and a connecting plate, wherein the connecting plate is disposed between the bottom wall and the rotating mechanism, and The rotating mechanism is connected; the connecting shaft passes through the connecting plate, and the connecting plate has a certain distance from the bottom wall; one end of the adjusting rod is fixedly connected with the bottom wall, the other end passes through the connecting plate, and the through hole passes through the connecting plate The length of the connecting plate is adjustable; adjusting the horizontality of the connecting plate by adjusting the length of the adjusting rod, the adjusting plate drives the rotating mechanism to adjust the verticality of the connecting shaft, thereby realizing the electrode The level of the board is adjusted. The process chamber of claim 12, wherein the horizontal adjustment mechanism further comprises a telescopic tube; the telescopic tube is sleeved outside the connecting shaft, and the first end thereof is sealingly connected with the bottom wall The second end is sealingly connected to the connecting plate. The process chamber of claim 8 , wherein the cavity comprises a first sub-cavity and a second sub-cavity, wherein the first sub-cavity is disposed in the second sub-cavity And communicating with the second sub-cavity; wherein the pedestal is disposed in the second sub-cavity; the upper electrode plate is located at the first sub-cavity and the second sub-cavity Changing between; when the upper electrode plate moves into the second sub-cavity, the upper electrode plate is in the pre-cleaning process position; when the electrode plate moves into the first sub-cavity, the upper electrode plate In the degassing process position. A semiconductor processing apparatus, comprising the process chamber of any one of claims 1 to 12.