CN105479026A - Method for improving connecting strength of nano sliver paste and chemical nickel-plated gold substrate - Google Patents
Method for improving connecting strength of nano sliver paste and chemical nickel-plated gold substrate Download PDFInfo
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- CN105479026A CN105479026A CN201510915295.XA CN201510915295A CN105479026A CN 105479026 A CN105479026 A CN 105479026A CN 201510915295 A CN201510915295 A CN 201510915295A CN 105479026 A CN105479026 A CN 105479026A
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- joint
- chemical nickel
- gold substrate
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K31/00—Processes relevant to this subclass, specially adapted for particular articles or purposes, but not covered by only one of the preceding main groups
- B23K31/02—Processes relevant to this subclass, specially adapted for particular articles or purposes, but not covered by only one of the preceding main groups relating to soldering or welding
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/42—Printed circuits
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Powder Metallurgy (AREA)
Abstract
The invention discloses a method for improving connecting strength of nano sliver paste and a chemical nickel-plated gold substrate. The method comprises the following steps: coating a layer of nano sliver paste on the ultrasonically-cleaned chemical nickel-plated gold substrate by use of a screen printing machine, and then, pasting a chip; pre-heating a joint, heating the joint to a preheating temperature at certain heating speed, and keeping the temperature for certain time; and after the pre-heating is ended, directly transferring the joint to an environment with a relatively high temperature to sinter quickly without a heating process, and cooling the joint with a furnace or directly taking down the joint after keeping the temperature for certain time. According to the method, while the whole sintering time is shortened, the connecting reliability of the nano sliver joint on the chemical nickel-plated gold substrate is successfully improved, the process is simple, and the equipment requirements are low.
Description
Technical field
The present invention relates to a kind of new-type Nano Silver slurry (or claiming soldering paste) sintering technology, specifically, relate to and be difficult to sinter on chemical nickel plating gold (ENIG) substrate that connects at nano mattisolda in the past, adopt new sintering method to realize the reliable connection of nano mattisolda, belong to the innovative technology in process improving field.
Background technology
In recent years, nano mattisolda as the unleaded electronics connecting material of a kind of green, owing to having outstanding conduction, heat conductivility, the advantages such as lower sintering temperature and higher serviceability temperature, receive much concern in great-power electronic electrical applications, especially in high-temperature applications.But utilize Nano Silver as interconnection material before, the printed circuit board (PCB) (PCB) be connected generally needs to carry out surface treatment.Chemical nickel plating gold (ENIG) surface-treated pad, have that solderability is good, good heat resistance, flatness are high and the plurality of advantages such as oxidation resistance is strong, simultaneously, ENIG is lower compared to electroplated Ni/Au cost, and be applicable to non-conduction circuit printed board plating process, make it in PCB surface treatment, be able to extensive use.But, we find in insulated gate bipolar transistor (IGBT) chip and ENIG substrate interconnect are tested, at sintering Nano Silver joint near the linkage interface place of substrate, an Au-Ag solid solution layer and the densified very poor defect layer of silver can be formed, cause the shear strength sintering silver-colored joint very low, well below normally using allowed band, only has average 7.8MPa.By clarification, it connects the scientific reasons of poor effect in the present invention, propose to adopt and increase preheating procedure in existing soldering paste sintering process, be quickly moved to the specific process of high temperature sintering environment subsequently, successfully improve the interconnect strength of nano mattisolda and chemical nickel plating gold base.(as IGBT module) is laid a good foundation in this manufacture being great-power electronic power module.
Summary of the invention
The present invention mainly solves the interconnection problems of nanometer silver paste at chemical nickel plating gold base, provides a kind of process improving method of simple possible.Improve sintering method by the present invention, utilize warm table and screen printing apparatus, realize the reliable connection of Nano Silver joint on chemical nickel and gold substrate.
The inventive method technical scheme is as follows:
Improve a method for nanometer silver paste and chemical nickel plating gold base bonding strength, concrete steps are as follows:
(1) on the chemical nickel and gold substrate of ultrasonic cleaning, screen process press brushing one deck nano mattisolda is used, then pasting chip;
(2) preheating is carried out in butt joint, is heated to preheat temperature with certain heating rate, and preheat temperature range is 120-180 DEG C, to remove the organic matter in nano mattisolda in cold stage volatilization;
(3), after preheating terminates, joint is moved to 260-280 DEG C and carry out sintered heat insulating, while guarantee silver paste fully sinters, the phase counterdiffusion preventing gold, silver atom excessive and the formation of solid solution layer and defect layer; Then cool with stove or directly take off.
Described soldering paste brushing thickness is preferably 25-50 μm.Pre-heating temperature elevation speed is preferably 4-6 DEG C/min.The preheating insulation time is preferably 5-30min.The sintered heat insulating time is 20-30 DEG C.
The present invention is brushing one deck nano mattisolda on chemical nickel and gold substrate, then pasting chip.In existing sintering process, novelty introduces one preheating procedure, and attachment joint is heated to preheat temperature with certain heating rate, insulation a period of time, and the organic matter ensureing when low-temperature zone in nano mattisolda can fully volatilize removal; After preheating terminates, joint is moved to higher temperature environment and carry out heat preservation sintering, save the middle heating-up time, thus while guarantee silver paste fully sinters, the phase counterdiffusion preventing gold, silver atom excessive and the formation of solid solution layer and defect layer, ensure the reliability that joint connects.
Effect of the present invention:
(1) the present invention have employed innovatively increases by one preheating procedure in existing soldering paste sintering process, is quickly moved to the specific process of hot environment sintering subsequently, has shortened the sintering time burning nano mattisolda entirety.
(2) the present invention is by improving process, avoid igbt chip and chemical nickel plating gold base when interconnecting, in the formation of the defect layer at the silver-colored joint interface place of sintering, successfully the interconnection average shear strength of nano mattisolda and chemical nickel plating gold base is increased to 18.5MPa from 7.8MPa.
(3) nano mattisolda that the present invention uses is green lead-free connect material, and whole process can not pollute.
Accompanying drawing explanation
Fig. 1: the sintering process method curve of prior art and invention technology.As seen from the figure, whole sintering process, according to the technology of the present invention, will reduce than the existing technology required time do not improved of employing.
Fig. 2: the shearing strength of joint Comparative result using gained before and after invention technical method.As seen from the figure, after adopting the technology of the present invention, the average shear strength of gained joint brings up to 18.5MPa from 7.8MPa, substantially increases the reliability that joint connects.
Detailed description of the invention
The invention provides a kind of method improving nanometer silver paste and chemical nickel plating gold base bonding strength.Whole process needs a screen process press and two warm tables.In existing soldering paste sintering process, increase by one preheating procedure, be quickly moved to hot environment sintering subsequently, ensure that the reliability that the Nano Silver joint be applied on ENIG substrate connects.Concrete steps are as follows:
(1) brush: on the chemical nickel and gold substrate of ultrasonic cleaning, use screen process press brushing one deck nano mattisolda, then mount igbt chip.
(2) preheating: preheating is carried out in butt joint, is heated to preheat temperature with certain heating rate, insulation a period of time, ensures that the organic matter volatilization in nano mattisolda is removed.
(3) sinter: after preheating terminates, save the middle heating-up time, directly joint is quickly moved to higher temperature environment and carries out heat preservation sintering, then cool with stove or directly take off.
Example 1
Brushing solder paste thickness is 50 μm, and then carry out the pre-heat treatment to the complete joint of attachment, heating rate is 5 DEG C/min, preheat temperature is 150 DEG C, the preheating insulation time is 10min, subsequently quick sintering temperature joint being moved to 275 DEG C, cools after insulation 30min with stove.As shown in Figure 1, the shear strength of acquisition as shown in Figure 2 for process curve.As shown in Figure 2, after adopting the technology of the present invention in this example, the average shear strength of joint brings up to 18.5MPa from 7.8MPa.
Example 2
Brushing solder paste thickness is 25 μm, and then carry out the pre-heat treatment to the complete joint of attachment, heating rate is 4 DEG C/min, preheat temperature is 120 DEG C, the preheating insulation time is 30min, subsequently quick sintering temperature joint being moved to 260 DEG C, directly takes off after insulation 25min.
Example 3
Brushing solder paste thickness is 40 μm, and then carry out the pre-heat treatment to the complete joint of attachment, heating rate is 6 DEG C/min, preheat temperature is 180 DEG C, the preheating insulation time is 5min, subsequently quick sintering temperature joint being moved to 280 DEG C, cools after insulation 20min with stove.
In sum, it is only better several embodiment of the present invention, not technical scope of the present invention is imposed any restrictions, thus every above embodiment is done according to technical spirit of the present invention any trickle amendment, equivalent variations and modification, all still belong in the scope of technical solution of the present invention.
Claims (5)
1. improve a method for nanometer silver paste and chemical nickel plating gold base bonding strength, it is characterized in that step is as follows:
(1) on the chemical nickel and gold substrate of ultrasonic cleaning, screen process press brushing one deck nano mattisolda is used, then pasting chip;
(2) on existing Process ba-sis, introduce preheating procedure, joint is heated to preheat temperature 120-180 DEG C with certain heating rate, remove the organic matter in nano mattisolda in cold stage volatilization;
(3), after preheating terminates, joint is moved to 260-280 DEG C and carry out heat preservation sintering, while guarantee silver paste fully sinters, the phase counterdiffusion preventing gold, silver atom excessive and the formation of solid solution layer and defect layer; Then cool with stove or directly take off.
2. method according to claim 1, is characterized in that described soldering paste brushing thickness is 25-50 μm.
3. method according to claim 1, is characterized in that described heating rate is 4-6 DEG C/min.
4. method according to claim 1, is characterized in that the preheating insulation time is 5-30min.
5. method according to claim 1, is characterized in that the described heat preservation sintering time is 20-30 DEG C.
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CN201510915295.XA CN105479026B (en) | 2015-12-09 | 2015-12-09 | A kind of method for improving nanometer silver paste and chemical nickel plating gold base bonding strength |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106373954A (en) * | 2016-10-14 | 2017-02-01 | 天津大学 | Sintered IGBT (Insulated Gate Bipolar Transistor) module applying nanometer silver soldering paste and fabrication method of sintered IGBT module |
CN106653627A (en) * | 2016-10-11 | 2017-05-10 | 天津大学 | Sintering method for connecting bare copper substrate or copper-clad base plate with nano silver solder paste |
CN107731701A (en) * | 2017-09-18 | 2018-02-23 | 全球能源互联网研究院有限公司 | A kind of sintering method of semiconductor devices and the manufacture method of semiconductor devices |
CN109378309A (en) * | 2018-09-17 | 2019-02-22 | 天津大学 | A kind of nano mattisolda low pressure sintering combined power modular approach |
CN109623068A (en) * | 2019-01-10 | 2019-04-16 | 哈尔滨工业大学(深圳) | A kind of nano silver connection method based on multiple spot ultrasonic vibration |
CN110416101A (en) * | 2019-08-07 | 2019-11-05 | 深圳市顺益微电子有限公司 | Use sintering silver paste as the power module copper sheet welding procedure of bonding agent |
CN113206018A (en) * | 2021-04-23 | 2021-08-03 | 天津工业大学 | Low-temperature large-area uniform sintering method for nano-silver soldering paste |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070134125A1 (en) * | 2005-12-13 | 2007-06-14 | Indium Corporation Of America | Lead-Free Solder Alloys And Solder Joints Thereof With Improved Drop Impact Resistance |
CN101593712A (en) * | 2009-06-26 | 2009-12-02 | 天津大学 | Low-temperature sintering method and nano silver paste thickness control device that high-power chip connects |
CN105021589A (en) * | 2015-06-18 | 2015-11-04 | 北京航空航天大学 | Method for preparing hydrophobic SERS substrate by using silk-screen printing technology |
CN105101658A (en) * | 2015-09-09 | 2015-11-25 | 中南大学 | Hot ultrasonic low-temperature sintering method and device of nano silver conductive ink |
CN105118790A (en) * | 2015-07-23 | 2015-12-02 | 淄博美林电子有限公司 | Preparation method of high temperature resistant packaging framework of silicon carbide diode |
-
2015
- 2015-12-09 CN CN201510915295.XA patent/CN105479026B/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070134125A1 (en) * | 2005-12-13 | 2007-06-14 | Indium Corporation Of America | Lead-Free Solder Alloys And Solder Joints Thereof With Improved Drop Impact Resistance |
CN101593712A (en) * | 2009-06-26 | 2009-12-02 | 天津大学 | Low-temperature sintering method and nano silver paste thickness control device that high-power chip connects |
CN105021589A (en) * | 2015-06-18 | 2015-11-04 | 北京航空航天大学 | Method for preparing hydrophobic SERS substrate by using silk-screen printing technology |
CN105118790A (en) * | 2015-07-23 | 2015-12-02 | 淄博美林电子有限公司 | Preparation method of high temperature resistant packaging framework of silicon carbide diode |
CN105101658A (en) * | 2015-09-09 | 2015-11-25 | 中南大学 | Hot ultrasonic low-temperature sintering method and device of nano silver conductive ink |
Non-Patent Citations (2)
Title |
---|
MATKOWSKI P K等: "Structure of the Thermal Interface connection made of sintered nano silver", 《ISSE INTERNATIONAL SPRING SEMINAR IN ELECTRONICS TECHNOLOGY》 * |
曹云娇: "电流烧结纳米银焊膏连接工艺研究及接头可靠性", 《天津大学》 * |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106653627A (en) * | 2016-10-11 | 2017-05-10 | 天津大学 | Sintering method for connecting bare copper substrate or copper-clad base plate with nano silver solder paste |
CN106653627B (en) * | 2016-10-11 | 2019-02-05 | 天津大学 | A kind of nano mattisolda connects the sintering method of naked copper substrate or bonded copper base |
CN106373954A (en) * | 2016-10-14 | 2017-02-01 | 天津大学 | Sintered IGBT (Insulated Gate Bipolar Transistor) module applying nanometer silver soldering paste and fabrication method of sintered IGBT module |
CN107731701A (en) * | 2017-09-18 | 2018-02-23 | 全球能源互联网研究院有限公司 | A kind of sintering method of semiconductor devices and the manufacture method of semiconductor devices |
CN109378309A (en) * | 2018-09-17 | 2019-02-22 | 天津大学 | A kind of nano mattisolda low pressure sintering combined power modular approach |
CN109623068A (en) * | 2019-01-10 | 2019-04-16 | 哈尔滨工业大学(深圳) | A kind of nano silver connection method based on multiple spot ultrasonic vibration |
CN109623068B (en) * | 2019-01-10 | 2021-02-19 | 哈尔滨工业大学(深圳) | Nano-silver connection method based on multipoint ultrasonic vibration |
CN110416101A (en) * | 2019-08-07 | 2019-11-05 | 深圳市顺益微电子有限公司 | Use sintering silver paste as the power module copper sheet welding procedure of bonding agent |
CN113206018A (en) * | 2021-04-23 | 2021-08-03 | 天津工业大学 | Low-temperature large-area uniform sintering method for nano-silver soldering paste |
CN113206018B (en) * | 2021-04-23 | 2022-07-08 | 天津工业大学 | Low-temperature large-area uniform sintering method for nano-silver soldering paste |
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